RF power amplifiers and modules and RF power amplifier modules

Abstract

The present invention provides a radio frequency power amplifier and a radio frequency power amplifier module, wherein the radio frequency power amplifier comprises a signal input terminal, an input matching circuit, a power amplification circuit, an output matching circuit, a signal output terminal and a bias circuit; the bias circuits all comprise a first triode, a second triode, a third triode, a first resistor, a second resistor, a first capacitor, a first field effect transistor, a second field effect transistor and a third capacitor. The present invention designs a new bias circuit so that the gain of the radio frequency power amplifier will not decrease with the increase of temperature.

Description

Technical Field

[0001] The present invention relates to the field of wireless communication technology, and in particular to a radio frequency power amplifier and module and a radio frequency power amplifier module. Background Art

[0002] Wireless broadband is referred to as WIFI. In order to meet the flexible scheduling of different transmission rates of WIFI users, the 802.11 protocol defines a variable amount of user data carried by each frame, and defines a LENGTH field in the frame header to indicate the amount of data carried by the frame. For example, the PSDU field of 11N can be between 1-65535 bytes, so the frame length of WIFI is variable, ranging from tens of μs to thousands of μs.

[0003] Since the frame length of WIFI is variable, the working time of each frame is also different for the transmitter. The time division duplex system is referred to as the TDD system. Since WIFI is a TDD system, the power amplifier of the transmitter is in a continuous cycle of on-off-on-off.

[0004] Therefore, when the power amplifier in the prior art is turned from off to on, its temperature will rise rapidly, and due to the inherent characteristics of the GaAs semiconductor in the power amplifier, the gain of the power amplifier will decrease as the temperature rises. Summary of the invention

[0005] In view of the above deficiencies in the prior art, the present invention proposes a new radio frequency power amplifier and module and a radio frequency power amplifier module to solve the problem in the prior art that the gain of the power amplifier decreases with increasing temperature.

[0006] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a radio frequency power amplifier, which includes a signal input terminal, an input matching circuit, a power amplification circuit, an output matching circuit, a signal output terminal and a bias circuit;

[0008] The input end of the input matching circuit is connected to the signal input end;

[0009] The input end of the power amplifier circuit is connected to the output end of the input matching circuit, the first output end of the power amplifier circuit is used to connect to the power supply voltage, and the second output end of the power amplifier circuit is grounded;

[0010] The input end of the output matching circuit is connected to the first output end of the power amplifier circuit;

[0011] The signal output terminal is connected to the output terminal of the output matching circuit;

[0012] The bias circuits all include a first triode, a second triode, a third triode, a first resistor, a second resistor, a first capacitor, a first field effect transistor, a second field effect transistor and a third resistor;

[0013] The emitter of the first transistor is connected to the input end of the power amplifier circuit, and the collector of the first transistor is used to connect to an external enable signal;

[0014] The base of the second triode is connected to the base of the first triode and the collector of the second triode respectively;

[0015] The collector of the third triode is respectively connected to the emitter of the second triode and the base of the third triode, and the emitter of the third triode is grounded;

[0016] A first end of the first resistor is connected to the collector of the first transistor, and a second end of the first resistor is connected to the collector of the second transistor;

[0017] The first end of the second resistor is connected to the collector of the second transistor;

[0018] The first end of the first capacitor is connected to the second end of the second resistor, and the second end of the first capacitor is grounded;

[0019] The drain of the first field effect transistor is connected to the second end of the second resistor, and the source of the first field effect transistor is grounded;

[0020] The first end of the third resistor is connected to the working voltage, and the second end of the third resistor is connected to the gate of the first field effect transistor;

[0021] The drain of the second field effect transistor is connected to the gate of the first field effect transistor, the source of the second field effect transistor is grounded, and the gate of the second field effect transistor is used to connect to an external enable signal.

[0022] Preferably, the input matching circuit includes a second capacitor, a first end of the second capacitor serves as an input end of the input matching circuit, and a second end of the second capacitor serves as an output end of the input matching circuit.

[0023] Preferably, the power amplifier circuit includes a fourth transistor, the base of the fourth transistor serves as the input end of the power amplifier circuit, the collector of the fourth transistor serves as the first output end of the power amplifier circuit, and the emitter of the fourth transistor serves as the second output end of the power amplifier circuit.

[0024] Preferably, the output matching circuit includes a first inductor and a third capacitor, the first output end of the power amplifier circuit is connected to the power supply voltage by connecting the first inductor in series, the first end of the third capacitor serves as the input end of the output matching circuit, and the second end of the third capacitor serves as the output end of the output matching circuit.

[0025] In a second aspect, the present invention provides a radio frequency power amplifier module, which includes a substrate and the radio frequency power amplifier as described above.

[0026] Preferably, the radio frequency power amplifier is fixed to the substrate by silver paste or flip chip process.

[0027] Preferably, electrical connections are achieved between components of the RF power amplifier and between components of the RF power amplifier and the substrate through metal thin wires.

[0028] Preferably, the RF power amplifier adopts a CMOS process or a GaAs process.

[0029] In a third aspect, the present invention provides a radio frequency power amplifier module, which includes the radio frequency power amplifier as described above.

[0030] Compared with the prior art, the RF power amplifier in the present invention designs a bias circuit to include a first transistor, a second transistor, a third transistor, a first resistor, a second resistor, a first capacitor, a first field effect transistor, a second field effect transistor and a third capacitor, and limits the connection relationship between each component, so that the gain of the RF power amplifier will not decrease with the increase of temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings:

[0032] Figure 1 A circuit schematic diagram of a radio frequency power amplifier provided in Embodiment 1 of the present invention;

[0033] Figure 2 A waveform diagram showing the enabling of the RF power amplifier and the voltage change at point A provided in the first embodiment of the present invention;

[0034] Figure 3 A waveform diagram showing the change of the enable, point A voltage, bias current, temperature and gain of the RF power amplifier provided in the first embodiment of the present invention;

[0035] Figure 4 A circuit schematic diagram of a power amplifier circuit provided by the prior art;

[0036] Figure 5 The waveform diagram of the change of the enable, bias current, temperature and gain of the power amplifier provided by the prior art;

[0037] Figure 6 A circuit schematic diagram of a radio frequency power amplifier module provided in Embodiment 2 of the present invention;

[0038] Figure 7 A schematic diagram of a circuit module of a radio frequency power amplifier module provided in Embodiment 2 of the present invention. DETAILED DESCRIPTION

[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of the present application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of the present application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0040] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0041] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] Embodiment 1

[0043] The embodiment of the present invention provides a radio frequency power amplifier 100, Figure 1 As shown, it includes a signal input terminal IN, an input matching circuit 1, a power amplifier circuit 2, an output matching circuit 3, a signal output terminal OUT and a bias circuit 4;

[0044] Among them, the signal input terminal IN is used to access the radio frequency signal; the input terminal of the input matching circuit 1 is connected to the signal input terminal IN; the input terminal of the power amplifier circuit 2 is connected to the output terminal of the input matching circuit 1, the first output terminal of the power amplifier circuit 2 is used to connect the power supply voltage VCC, and the second output terminal of the power amplifier circuit 2 is grounded; the input terminal of the output matching circuit 3 is connected to the first output terminal of the power amplifier circuit 2; the signal output terminal OUT is connected to the output terminal of the output matching circuit 3; and is used to output the radio frequency signal amplified by the power amplifier circuit 2.

[0045] The input matching circuit 1 includes a second capacitor C2 , a first end of the second capacitor C2 serves as an input end of the input matching circuit 1 , and a second end of the second capacitor C2 serves as an output end of the input matching circuit 1 .

[0046] The power amplifier circuit 2 includes a fourth transistor Q6, the base of the fourth transistor Q6 serves as the input end of the power amplifier circuit 2, the collector of the fourth transistor Q6 serves as the first output end of the power amplifier circuit 2, and the emitter of the fourth transistor Q6 serves as the second output end of the power amplifier circuit 2.

[0047] The output matching circuit 3 includes a first inductor L1 and a third capacitor C3. The power amplifier circuit 2 is connected to the power supply voltage VCC by being connected in series with the first inductor L1. The second end of the first inductor L1 is connected to the first output end of the power amplifier circuit 2. The first end of the third capacitor C3 serves as the input end of the output matching circuit 3, and the second end of the third capacitor C3 serves as the output end of the output matching circuit 3.

[0048] The bias circuit 4 includes a first transistor Q1 , a second transistor Q2 , a third transistor Q3 , a first resistor R1 , a second resistor R2 , a first capacitor C1 , a first field effect transistor Q4 , a second field effect transistor Q5 and a third resistor R3 .

[0049] The emitter of the first transistor Q1 is connected to the input end of the final amplifier in the power amplifier circuit 2 , and the collector of the first transistor Q1 is used to connect to an external enable signal.

[0050] The base of the second transistor Q2 is connected to the base of the first transistor Q1 and the collector of the second transistor Q2 respectively.

[0051] The collector of the third transistor Q3 is connected to the emitter of the second transistor Q2 and the base of the third transistor Q3 respectively, and the emitter of the third transistor Q3 is grounded.

[0052] A first end of the first resistor R1 is connected to the collector of the first transistor Q1 , and a second end of the first resistor R1 is connected to the collector of the second transistor Q2 .

[0053] A first end of the second resistor R2 is connected to the collector of the second transistor Q2.

[0054] A first end of the first capacitor C1 is connected to a second end of the second resistor R2 , and a second end of the first capacitor C1 is grounded.

[0055] The drain of the first field effect transistor Q4 is connected to the second end of the second resistor R2 , and the source of the first field effect transistor Q4 is grounded.

[0056] A first end of the third resistor R3 is used to connect to the working voltage V, and a second end of the third resistor R3 is connected to the gate of the first field effect transistor Q4.

[0057] The drain of the second field effect transistor Q5 is connected to the gate of the first field effect transistor Q4, the source of the second field effect transistor Q5 is grounded, and the gate of the second field effect transistor Q5 is used to connect to an external enable signal.

[0058] In this embodiment, the number of bias circuits 4 of the RF power amplifier 100 is set according to actual needs. When the power amplifier circuit 2 is divided into multiple stages, a bias circuit 4 can be designed for each stage of the power amplifier circuit 2, or multiple stages of the power amplifier circuit 2 can share one bias circuit 4.

[0059] The power amplifier in the prior art is as follows Figure 4 As shown, the RF input signal passes through capacitor C 1 To the power amplifier tube Q 4 The base of the power amplifier tube Q 4 After amplification, it passes through the collector and capacitor C 2 Output signal, power supply voltage Vcc passes through inductor L 1 Give the power amplifier Q 4 Provides collector operating current; transistor Q 1 , transistor Q 2 , resistor R 1 Give the power amplifier tube Q 4 Provides bias current. Combined with Figure 5 As shown, when the enable signal received by the power amplifier is set to a high level, its bias current remains unchanged, the voltage at point a increases, and the waveform is flat, the temperature of the power amplifier also increases, but its gain decreases.

[0060] The RF power amplifier 100 in this embodiment adds a series circuit consisting of a second resistor R2 and a first capacitor C1 at point A, wherein the first capacitor C1 is grounded; the first resistor R1, the second resistor R2 and the first capacitor C1 form a charging circuit, and the charging constant , wherein r1 is the resistance value of the first resistor R1, r2 is the resistance value of the second resistor R2, and c is the capacitance value of the first capacitor C1.

[0061] Set the enable rising edge time to T0 and the enable falling edge time to T1. The waveform of the enable of the RF power amplifier 100 and the voltage change at point A is as follows: Figure 2 shown.

[0062] At T0, the second field effect transistor Q5 is turned on and the first field effect transistor Q4 is turned off. Due to the rapid rise of the enable signal, the first capacitor C1 is approximately short-circuited, and the voltage at point A is pulled down by the second resistor R2. As the first capacitor C1 is charged, the voltage on the first capacitor C1 gradually rises, and the voltage at point A also rises accordingly until T1.

[0063] At T1, the enable signal changes to a low level, usually 0V, at which time the second field effect transistor Q5 is turned off, the first field effect transistor Q4 is turned on, and the first capacitor C1 is discharged to 0V through the first field effect transistor Q4 to prepare for the next cycle.

[0064] Combination Figure 3 As shown, during the period from T0 to T1, the voltage at point A rises, causing the output current of the emitter of the first transistor Q1 to gradually increase, compensating for the gain decrease of the fourth transistor Q6 due to the temperature increase, so that the gain of the fourth transistor Q6 is stable throughout the time slot.

[0065] Compared with the prior art, the RF power amplifier 100 in this embodiment designs the bias circuit 4 to include a first transistor Q1, a second transistor Q2, a third transistor Q3, a first resistor R1, a second resistor R2, a first capacitor C1, a first field effect transistor Q4, a second field effect transistor Q5 and a third capacitor C3, and limits the connection relationship between each component, so that the gain of the RF power amplifier 100 will not decrease with the increase of temperature.

[0066] Embodiment 2

[0067] The embodiment of the present invention provides a radio frequency power amplifier module 200, combined with Figure 6 As shown, it includes a substrate 201 and the RF power amplifier 100 in the first embodiment.

[0068] The input RF signal, the output RF signal, the enable signal, the power supply voltage VCC and the working voltage V are all connected from the outside through the pads on the substrate 201 .

[0069] The RF power amplifier 100 is fixed to the substrate 201 by silver paste or flip chip process.

[0070] Electrical connections are respectively achieved between the components of the RF power amplifier 100 and between the components of the RF power amplifier 100 and the substrate 201 through metal fine wires; if the RF power amplifier 100 is fixed to the substrate 201 through a flip-chip process, the bias circuit 4 and the substrate 201 can be connected through solder balls to achieve electrical connection between the two.

[0071] The RF power amplifier 100 is manufactured using a CMOS process or a GaAs process. Specifically, the bias circuit 4 is manufactured using a CMOS process, but not limited to a CMOS process, and the input matching circuit 1, the power amplifier circuit 2, and the output matching circuit 3 are all manufactured using a GaAs process, but not limited to a GaAs process.

[0072] Since the RF power amplification module 200 in this embodiment includes the RF power amplifier 100 in the first embodiment, it can also achieve the technical effects achieved by the RF power amplifier 100 in the first embodiment, which will not be elaborated here.

[0073] In addition, if Figure 7 As shown, the RF power amplifier module 200 is a large chip, wherein the input matching circuit 1, the power amplifier circuit 2 and the output matching circuit 3 of the RF power amplifier 100 constitute a RF amplifier circuit chiplet 202, and one or more bias circuits constitute a bias network chiplet 203. The substrate 201 of the RF power amplifier module 200 has multiple RF amplifier circuit chips 202 and multiple bias network chips 203.

[0074] Embodiment 3

[0075] The embodiment of the present invention provides a radio frequency power amplifier module, which includes the radio frequency power amplifier 100 in embodiment 1. Since the radio frequency power amplifier module in this embodiment includes the radio frequency power amplifier 100 in embodiment 1, it can also achieve the technical effect achieved by the radio frequency power amplifier 100 in embodiment 1, which will not be described in detail here.

[0076] It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those skilled in the art should understand that any modification or equivalent substitution of the present invention without departing from the spirit and scope of the present invention should be included within the scope of the present invention. In addition, unless otherwise indicated by the context, words appearing in the singular include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment may be used in combination with all or part of any other embodiment.

Claims

1. A radio frequency power amplifier, comprising a signal input terminal, an input matching circuit, a power amplification circuit, an output matching circuit, a signal output terminal and a bias circuit; The input end of the input matching circuit is connected to the signal input end; The input end of the power amplifier circuit is connected to the output end of the input matching circuit, the first output end of the power amplifier circuit is used to connect to the power supply voltage, and the second output end of the power amplifier circuit is grounded; The input end of the output matching circuit is connected to the first output end of the power amplifier circuit; The signal output terminal is connected to the output terminal of the output matching circuit; characterized in that, The bias circuit includes a first triode, a second triode, a third triode, a first resistor, a second resistor, a first capacitor, a first field effect transistor, a second field effect transistor and a third resistor; The emitter of the first transistor is connected to the input end of the power amplifier circuit, and the collector of the first transistor is used to connect to an external enable signal; The base of the second triode is connected to the base of the first triode and the collector of the second triode respectively; The collector of the third triode is respectively connected to the emitter of the second triode and the base of the third triode, and the emitter of the third triode is grounded; A first end of the first resistor is connected to the collector of the first transistor, and a second end of the first resistor is connected to the collector of the second transistor; The first end of the second resistor is connected to the collector of the second transistor; The first end of the first capacitor is connected to the second end of the second resistor, and the second end of the first capacitor is grounded; The drain of the first field effect transistor is connected to the second end of the second resistor, and the source of the first field effect transistor is grounded; The first end of the third resistor is used to connect to the working voltage, and the second end of the third resistor is connected to the gate of the first field effect transistor; The drain of the second field effect transistor is connected to the gate of the first field effect transistor, the source of the second field effect transistor is grounded, and the gate of the second field effect transistor is used to connect to an external enable signal.

2. The radio frequency power amplifier according to claim 1, characterized in that: The input matching circuit includes a second capacitor, a first end of the second capacitor serves as an input end of the input matching circuit, and a second end of the second capacitor serves as an output end of the input matching circuit.

3. The radio frequency power amplifier according to claim 1, characterized in that: The power amplifier circuit includes a fourth transistor, the base of the fourth transistor serves as the input end of the power amplifier circuit, the collector of the fourth transistor serves as the first output end of the power amplifier circuit, and the power amplifier circuit of the fourth transistor serves as the second output end of the power amplifier circuit.

4. The radio frequency power amplifier according to claim 1, characterized in that: The output matching circuit includes a first inductor and a third capacitor. The first output end of the power amplifier circuit is connected to the power supply voltage by being connected in series with the first inductor. The first end of the third capacitor serves as the input end of the output matching circuit, and the second end of the third capacitor serves as the output end of the output matching circuit.

5. A radio frequency power amplifier module, characterized in that: The radio frequency power amplification module includes a substrate and a radio frequency power amplifier as described in any one of claims 1 to 4 arranged on the substrate.

6. The radio frequency power amplifier module according to claim 5, characterized in that: The radio frequency power amplifier is fixed to the substrate by silver paste or flip chip process.

7. The radio frequency power amplifier module according to claim 5, characterized in that: The components of the radio frequency power amplifier and the components of the radio frequency power amplifier and the substrate are electrically connected through metal thin wires.

8. The radio frequency power amplifier module according to claim 5, characterized in that: The radio frequency power amplifier is manufactured using a CMOS process or a GaAs process.

9. A radio frequency power amplifier module, characterized in that: The RF power amplifier module includes the RF power amplifier according to any one of claims 1 to 4.

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