A low-agglomerated spherical aluminum nitride powder and a method for preparing the same
By employing a three-stage heat treatment and cross-linking structure design for aluminum nitride powder, the problem of powder agglomeration was solved, resulting in high-purity and high-conversion-rate aluminum nitride powder suitable for high-integration semiconductor substrates and electronic device packaging.
Patent Information
- Application Number
- CN202311276748.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-06
- Publication Date
- 2026-02-17
- Estimated Expiration
- 2043-10-06
AI Technical Summary
Existing methods for preparing aluminum nitride powder result in low powder purity and easy agglomeration, which affects its application in highly integrated semiconductor substrates and electronic device packaging.
Aluminum nitrate nonahydrate, film-forming solution, and glucose monohydrate are mixed and cross-linked, and then subjected to a three-stage heating treatment of argon combustion and multiple ammonia calcinations to form a dense spiral network. This promotes the uniform distribution of aluminum nitrate and glucose inside and on the surface of the network, increasing the dispersion and reaction area.
Aluminum nitride powder with fine particle size, high conversion rate, and low agglomeration was prepared, which improved the uniformity and dispersibility of the material and enhanced its performance in electronic devices.