Micro-structure wire and preparation method thereof

Abstract

The invention discloses a surface microstructure high-voltage wire ('micro-structure wire 'for short) and a preparation method thereof, and the surface microstructure high-voltage wire is continuously prepared by a wire-drawing die with a micro-nano structure on the surface of an inner hole through a wire-drawing nano-imprinting method. The preparation method is low in cost and high in efficiency, can produce high-performance micro-structure wires with super-hydrophobic, super-oleophobic, anti-icing, anti-freezing rain, anti-rime, anti-dirt-accumulation and self-cleaning functions in batches, solves the problem of icing of overhead high-voltage wires in ice, snow and freezing rain weather, and improves the working efficiency of the overhead high-voltage wires. And a new technical scheme is provided for improving the reliability and the stability of the power transmission line.

Description

Technical Field

[0001] The invention belongs to the technical field of micro-machining, and in particular relates to a micro-structured wire and a preparation method thereof. Background Art

[0002] High-voltage conductors are key components in power transmission systems, and their performance directly affects the efficiency and reliability of power transmission. Under weather conditions such as ice, snow, and freezing rain, high-voltage conductors are prone to icing, which increases their mechanical load and may cause serious problems such as conductor breakage and power outages. In addition, icing may also cause electrical problems such as conductor vibration and flashover, greatly affecting the safety and stability of the entire transmission system.

[0003] Existing solutions include heating wires, mechanical vibration, and the use of anti-icing coatings, but these methods have many limitations: heating wires requires a lot of electricity, which not only has high operating costs, but also complex equipment and difficult maintenance; mechanical vibration is only suitable for mild icing conditions, and has limited effect when high-voltage wires are severely iced, and the installation and maintenance costs of mechanical devices are high; although anti-icing coatings can reduce the adhesion of ice and snow to a certain extent, the coating has low bonding strength and poor wear resistance, and usually gradually fails during use and needs to be re-coated regularly, which undoubtedly increases maintenance costs and workload.

[0004] In recent years, the construction of surface microstructures of bulk materials can provide armor protection and good wear resistance for functional coatings, or have excellent properties such as superhydrophobicity, superoleophobicity and anti-icing, which has attracted widespread attention. In 2020, Professor Wang Dehui's team from the University of Electronic Science and Technology of China published a study on the preparation of superhydrophobic surfaces with excellent wear resistance by constructing microstructures in Nature (Wang DH, et al. Design of robust superhydrophobic surfaces. Nature, 2020, 582 (7810): 55-59). In 2015, Professor Vorobyev's team abroad published a study on the preparation of microstructures by laser etching to obtain metal surfaces with superhydrophobic and self-cleaning functions in Journal of Applied Physics (Vorobyev AY, et al. Multifunctional surfaces produced by femtosecond laser pulses. Journal of Applied Physics, 2015, 117 (3): 033103-1-033103-5). Through the surface microstructure of the bulk material, the liquid can be more easily suspended on the surface, namely the Cassie-Baxter state, thereby increasing the contact angle. In addition, the surface microstructure can also capture air and form air pockets between the droplet and the solid surface. The presence of air pockets can significantly reduce the actual contact area between the droplet and the solid surface, making the droplet easier to roll rather than spread, thereby further enhancing the hydrophobicity of the surface. This method does not rely on external energy input, has the advantages of self-cleaning and good durability, and is suitable for various extreme environmental conditions.

[0005] However, it is still a major challenge to prepare uniform and stable bulk material micro-nano structures on large-area substrates. Although traditional micro-nanostructure preparation methods can achieve high-precision surface treatment in laboratory environments, these methods are costly and time-consuming, making them difficult to apply to large-scale industrial production.

[0006] There are no research reports on the preparation technology of micro-nano structures of bulk materials on the surface of high-voltage conductors. High-voltage conductors need to have high mechanical strength, high temperature resistance, UV resistance and stability under long-term outdoor exposure. Existing micro-nano structure preparation technology is difficult to implement on high-voltage conductors, and its long-term durability and stability cannot be guaranteed. In addition, the complex geometric structure and multi-strand winding design of high-voltage conductors make it extremely difficult to uniformly construct micro-nano structures on their surfaces. How to effectively achieve super-hydrophobic and oleophobic properties of micro-nano structures on high-voltage conductors still requires major technological breakthroughs and innovations. Summary of the invention

[0007] The present invention provides a microstructured conductor and a preparation method thereof. By constructing a specific microstructure of a bulk material on the surface of a high-voltage conductor, the conductor has multiple functions such as super-hydrophobicity, super-oleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling and self-cleaning, thereby enabling the high-voltage conductor to maintain good performance and stability under extreme weather conditions.

[0008] To solve the above problems, the technical solution provided by the present invention is as follows:

[0009] An embodiment of the present invention provides a microstructured conductor, comprising a high-voltage conductor body and a ring array microstructure on the surface of the high-voltage conductor body, wherein the microstructure is prepared based on the Cassie-Baxter model, and when a droplet contacts the microstructured surface, the droplet can be suspended on an air pocket above the microstructure, and this suspension state significantly reduces the actual contact area between the droplet and the contacted microstructured conductor surface, thereby greatly improving the hydrophobicity of the microstructured conductor surface; the Cassie-Baxter state of the microstructure: when a droplet contacts the surface, if there are microstructures on the surface, these microstructures can capture air to form a plurality of small air pockets; the droplet is suspended on these small air pockets instead of completely wetting the solid surface, and in this state, the surface contact angle is greatly increased, making it easier for the droplet to roll off instead of spreading on the surface, thereby avoiding the droplet from staying on the conductor surface for a long time, thereby reducing the risk of icing;

[0010] The microstructure is one or a combination of V-shaped microstructure, trapezoidal microstructure, rectangular microstructure and arc-shaped microstructure; the geometric characteristics of the microstructure enable it to capture more air when in contact with liquid droplets to form stable air pockets; the V-shaped microstructure and the trapezoidal microstructure are more likely to capture air when in contact with liquid droplets due to their sharp tops and inclined sides; the rectangular microstructure and the arc-shaped microstructure provide stable support points through flat or curved surfaces, so that the air pockets can be evenly distributed between the liquid droplets and the surface;

[0011] The contact angles between the microstructure and the droplet are in the range of 150° to 160°: due to the reduced contact area between the droplet and the microstructure surface, the contact angle reaches 150° to 160°. This high contact angle makes the droplet appear almost spherical on the surface, further enhancing the possibility of the droplet rolling off.

[0012] The top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

[0013] According to an optional embodiment of the present invention, the array period of the microstructures ranges from 100 nm to 1 mm.

[0014] According to an optional embodiment of the present invention, the cross-sectional size of the high-voltage conductor body ranges from 1 mm to 50 mm.

[0015] According to an optional embodiment of the present invention, the material of the high-voltage conductor body is one of iron, aluminum, copper and alloys thereof.

[0016] According to an optional embodiment of the present invention, the high-voltage conductor body is one of a single conductor with a circular, rectangular or irregular cross-section and a stranded wire composed of multiple conductors with circular, rectangular or irregular cross-sections.

[0017] The present invention also provides a method for preparing a microstructured wire, comprising the following steps:

[0018] Step S1, preparing a wire drawing die with a micro-nano structure on the inner hole surface;

[0019] Step S2, using a wire drawing die with a micro-nano structure on the inner hole surface, and controlling the wire drawing parameters in the process by wire drawing nanoimprinting method, the high-voltage wire body passes through the wire drawing die, undergoes plastic deformation, and finally obtains a microstructured wire with a ring array microstructure formed on the surface.

[0020] According to an optional embodiment of the present invention, the material of the wire drawing die in step S1 is one of tungsten-based cemented carbide, titanium-based cemented carbide, chromium-based cemented carbide, die steel and polycrystalline diamond. The wire drawing parameters in the process of step S2 include wire drawing speed, wire drawing temperature, cooling rate, tensile force, lubrication method and tension. These parameters are controlled so that the high-voltage wire can completely imprint and replicate the micro-nano structure, ensure the uniformity and consistency of the microstructure formed on the surface of the high-voltage wire body, and obtain the required micro-structure wire; wherein, the wire drawing speed is 1m / s~20m / s; the wire drawing temperature is 20℃~400℃; the cooling rate is 10℃ / s~100℃ / s; tensile force: 100N~10000N; lubrication method: dry lubrication, wet lubrication, emulsion lubrication; tension: 50N-500N; aluminum wire: drawing speed: 5m / s to 10m / s, drawing temperature: room temperature to 150℃, cooling rate: 20℃ / s to 50℃ / s, tensile force: 500N to 3kN, tension: 100N to 200N; copper wire: drawing speed: 10m / s to 20m / s, drawing temperature: 20℃ to 200℃, cooling rate: 30℃ / s to 80℃ / s, tensile force: 1kN to 10kN, tension: 200N to 500N.

[0021] According to an optional embodiment of the present invention, in step S1, the micro-nano structure on the inner hole surface of the wire drawing die is covered with a layer of nano-diamond coating.

[0022] According to an optional embodiment of the present invention, the period range of the microstructure array of the annular array formed on the surface of the high-voltage conductor body in step S2 is 100nm~1mm, the original shape of the high-voltage conductor body is circular, and the original size is 1.1~1.5 times the target size obtained by a single drawing or 10~50 times the target size obtained by multiple drawing.

[0023] According to an optional embodiment of the present invention, the microstructure is one or more of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure, wherein the top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the radius of curvature of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm

[0024] Compared with the prior art, the present invention provides a microstructured wire and a method for preparing the same, which have the following beneficial effects:

[0025] (1) Constructing a microstructure of the bulk material on the surface of the high-voltage conductor can make the liquid form a Cassie-Baxter state on the surface of the high-voltage conductor, and form air pockets between the liquid droplets and the solid surface, which will increase the contact angle between the liquid droplets and the conductor. Through the design of the surface microstructure, the high-voltage conductor can have the functions of super hydrophobicity, super oleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling and self-cleaning, so that the high-voltage conductor can adapt to a variety of harsh environments.

[0026] (2) The present invention can perfectly solve the problem of ice coating on high-voltage wires in weather such as ice, snow and freezing rain without external energy input. Since the microstructure is directly prepared on the surface of the high-voltage wire, it has very good mechanical properties; due to the super-hydrophobicity of the surface of the high-voltage wire, water droplets can roll and carry away dust and impurities on the surface, so the microstructure wire has good durability and self-cleaning ability, which will significantly reduce operation and maintenance costs.

[0027] (3) The microstructured conductor of the present invention can significantly reduce the accumulation of ice and snow on the conductor surface, reduce the impact of freezing rain, ice and snow on the conductor, and improve the reliability and stability of the transmission line. The microstructured conductor with multifunctional functions such as anti-icing, anti-freezing rain and self-cleaning can help build a more stable and reliable power transmission system, ensure the safety and efficiency of power supply, and reduce power outages caused by natural disasters.

[0028] (4) The method for preparing the microstructured wire in the present invention is: using a wire drawing die with a micro-nano structure on the inner hole surface, continuously preparing by wire drawing nanoimprinting. This method can be implemented by existing industrial technology, has a simple process, is suitable for large-scale industrial production, and has good application prospects in mass production of efficient and multifunctional high-voltage wires. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0030] Figure 1 An enlarged structural schematic diagram of a microstructured wire is provided for an embodiment of the present application.

[0031] Figure 2 A cross-sectional schematic diagram of a microstructured wire is provided for an embodiment of the present application.

[0032] Figure 3 A schematic diagram of a method for preparing a microstructured wire is provided for an embodiment of the present application.

[0033] Figure 4 This is a SEM image of the surface microstructure of the microstructured wire in Example 1 of the present application.

[0034] Figure 5 This is a SEM image of the surface microstructure of the microstructured wire in Example 2 of the present application.

[0035] Figure 6 This is a SEM image of the surface microstructure of the microstructured wire in Example 3 of the present application.

[0036] Figure 7 This is a SEM image of the surface microstructure of the microstructured wire in Example 4 of the present application.

[0037] Figure 8 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 5 of the present application.

[0038] Fig. 9 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 6 of the present application.

[0039] Fig.10 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 7 of the present application.

[0040] Fig.11 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 8 of the present application.

[0041] Fig.12 This is a laser confocal microscope test image of the surface microstructure of the microstructured wire in Example 9 of the present application.

[0042] Fig.13 This is a SEM image of the surface microstructure of the microstructured wire in Example 10 of the present application.

[0043] Fig.14 This is a SEM image of the surface microstructure of the microstructured wire in Example 11 of the present application.

[0044] Fig.15 This is a SEM image of the surface microstructure of the microstructured wire in Example 12 of the present application.

[0045] Fig.16 This is a SEM image of the surface microstructure of the microstructured wire in Example 13 of the present application.

[0046] Fig.17 A water contact angle test diagram of a microstructured conductor is provided for an embodiment of the present application.

[0047] Fig.18 A comparison chart of ice coating performance between a microstructure of a microstructured conductor prepared on an aluminum plate and an aluminum plate without a surface microstructure is provided for an embodiment of the present application. DETAILED DESCRIPTION

[0048] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0049] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a microstructured conductor, wherein the microstructured conductor 3 includes a high-voltage conductor body 3-1 and a ring-shaped array microstructure 3-2 on the surface of the high-voltage conductor body 3-1, wherein the microstructure 3-2 is prepared based on the Cassie-Baxter model, and when a droplet 3-4 contacts the surface of the microstructure 3-2, the droplet 3-4 can be suspended on the air pocket above the microstructure 3-2, and this suspension state significantly reduces the actual contact area between the droplet and the surface of the microstructured conductor in contact, thereby greatly improving the hydrophobicity of the surface of the microstructured conductor; Cassie-Baxter state of the microstructure 3-2: when the droplet 3-4 contacts the surface, if there are microstructures on the surface, these microstructures can capture air to form a plurality of small air pockets; the droplets are suspended on these small air pockets instead of completely wetting the solid surface, and in this state, the surface contact angle is greatly increased, making it easier for the droplets to roll off instead of spreading on the surface, thereby avoiding the droplets from staying on the conductor surface for a long time, thereby reducing the risk of freezing.

[0050] The microstructure in this embodiment is one or a combination of more than one of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure; the geometric properties of the microstructure enable it to capture more air when in contact with a liquid droplet to form a stable air pocket; the V-shaped microstructure and the trapezoidal microstructure are more likely to capture air when in contact with a liquid droplet due to their sharp tops and inclined sides; the rectangular microstructure and the arc-shaped microstructure provide stable support points through their flat or curved surfaces, so that the air pockets can be evenly distributed between the liquid droplet and the surface.

[0051] The contact angle 3-3 between the microstructure 3-2 and the droplet ranges from 150° to 160°: due to the reduction in the contact area between the droplet 3-4 and the surface of the microstructure 3-2, the contact angle 3-3 reaches 150° to 160°. This high contact angle 3-3 makes the droplet appear almost spherical on the surface, further enhancing the possibility of the droplet 3-4 rolling off.

[0052] The top angle of the V-shaped microstructure ranges from 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

[0053] Microstructures are divided into super-hydrophobic microstructures, medium-hydrophobic microstructures and general hydrophobic microstructures. Super-hydrophobic microstructures include: V-shaped microstructures with a top angle of 30° to 50°, a height of 100nm to 1000μm, and a bottom width of 50nm to 300μm; trapezoidal microstructures with a top width of 50nm to 300μm, a bottom width of 100nm to 500μm, a height of 100nm to 750μm, and an inclination angle of 15° to 30°. The moderately hydrophobic microstructures include: a V-shaped microstructure with a top angle of 50° to 70°, a height of 50nm to 500μm, and a bottom width of 300nm to 750μm; a trapezoidal microstructure with a top width of 300nm to 500μm, a bottom width of 500nm to 1000μm, a height of 100nm to 500μm, and an inclination angle of 30° to 45°; a rectangular microstructure with a height of 100nm to 500μm and a width of 50nm to 500μm. General hydrophobic microstructures include: the top width of the trapezoidal microstructure is 500nm to 750μm, the bottom width is 750nm to 1000μm, the height is 50nm to 750μm, and the inclination angle is 30° to 45°; the height of the rectangular microstructure is 500μm to 1000μm, and the width is 500μm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and the arc height is 20nm to 300μm.

[0054] Preferably, the array period of the microstructure ranges from 100nm to 1mm. The cross-sectional size of the high-voltage conductor body ranges from 1mm to 50mm. The material of the high-voltage conductor body is one of iron, aluminum, copper and their alloys. The high-voltage conductor body is one of a single conductor with a circular, rectangular or irregular cross-section and a stranded wire composed of multiple conductors with circular, rectangular or irregular cross-sections. The functions of the microstructured conductor of the present invention include super hydrophobicity, super oleophobicity, anti-icing, anti-freezing rain, anti-rime, anti-fouling and self-cleaning.

[0055] like Figure 3 As shown, an embodiment of the present invention also provides a method for preparing a microstructured wire, comprising the following steps:

[0056] Step S1, preparing a wire drawing die with a micro-nano structure on the inner hole surface;

[0057] Step S2, using a wire drawing die with a micro-nano structure on the inner hole surface, and controlling the wire drawing parameters in the process by wire drawing nanoimprinting method, the high-voltage wire body passes through the wire drawing die, undergoes plastic deformation, and finally obtains a microstructured wire with a ring array microstructure formed on the surface. Figure 3 The reference numeral 1 is the high-voltage conductor body 1 before wire drawing, the reference numeral 2 is the wire drawing die, and the reference numeral 3 is the microstructured conductor.

[0058] The material of the wire drawing die in step S1 is one of tungsten-based cemented carbide, titanium-based cemented carbide, chromium-based cemented carbide, die steel and polycrystalline diamond. The wire drawing parameters in the process of step S2 include wire drawing speed, wire drawing temperature, cooling rate, tensile force, lubrication method and tension. These parameters are controlled so that the high-voltage wire can completely imprint and replicate the micro-nano structure, ensuring the uniformity and consistency of the microstructure formed on the surface of the high-voltage wire body, and obtaining the required micro-structure wire. Among them, drawing speed: 1m / s~20m / s; drawing temperature: 20℃~400℃; cooling rate: 10℃ / s~100℃ / s; tensile force: 100N~10000N; lubrication method: dry lubrication, wet lubrication, emulsion lubrication; tension: 50N-500N; aluminum wire: drawing speed: 5m / s to 10m / s, drawing temperature: room temperature to 150℃, cooling rate: 20℃ / s to 50℃ / s, tensile force: 500N to 3kN, tension: 100N to 200N; copper wire: drawing speed: 10m / s to 20m / s, drawing temperature: 20℃ to 200℃, cooling rate: 30℃ / s to 80℃ / s, tensile force: 1kN to 10kN, tension: 200N to 500N.

[0059] In step S1, the micro-nano structure on the inner hole surface of the wire drawing die is covered with a layer of nano-diamond coating. In step S2, the micro-structure array period range of the annular array formed on the surface of the high-voltage conductor body is 100nm-1mm, the original shape of the high-voltage conductor body is circular, and the original size is 1.1-1.5 times the target size obtained by a single wire drawing or 10-50 times the target size obtained by multiple wire drawing.

[0060] The microstructure is one or a combination of more than one of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure, wherein the top angle range of the V-shaped microstructure is 30° to 70°, the height is 50nm to 1000μm, and the bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, the bottom width is 100nm to 1000μm, the height is 50nm to 750μm, and the inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and the width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and the arc height is 20nm to 300μm.

[0061] Example 1

[0062] A method for preparing a microstructured wire comprises the following steps:

[0063] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 2 mm.

[0064] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high voltage wire, the aluminum high voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the aluminum high voltage wire is a rectangular structure with a height of 150nm, a width of 75nm, and a period of 100nm. Figure 4 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 2 mm.

[0065] Example 2

[0066] A method for preparing a microstructured wire comprises the following steps:

[0067] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 2 mm.

[0068] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high voltage wire, the aluminum high voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the aluminum high voltage wire is a V-shaped structure with a height of 200nm, a width of 75nm, and an array period of 100nm. Figure 5The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 2 mm.

[0069] Example 3

[0070] A method for preparing a microstructured wire comprises the following steps:

[0071] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 5 mm.

[0072] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high voltage wire, the aluminum high voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high voltage wire is a V-shaped structure with a height of 1500nm, a width of 600nm, and an array period of 800nm. Figure 6 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 5 mm.

[0073] Example 4

[0074] A method for preparing a microstructured wire comprises the following steps:

[0075] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 10 mm.

[0076] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructure aluminum high-voltage wire, the aluminum high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high-voltage wire has good uniformity and consistency, and the required microstructure wire is obtained. The microstructure on the surface of the high-voltage wire is a V-shaped structure with a height of 20μm, a width of 7.5μm, and an array period of 10μm. Figure 7 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 10 mm.

[0077] Example 5

[0078] A method for preparing a microstructured wire comprises the following steps:

[0079] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 15 mm.

[0080] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high-voltage wire, the aluminum high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high-voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high-voltage wire is a V-shaped structure with a height of 100μm, a width of 40μm, and an array period of 50μm. Figure 8 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 15 mm.

[0081] Example 6

[0082] A method for preparing a microstructured wire comprises the following steps:

[0083] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 20 mm.

[0084] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high-voltage wire, the aluminum high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high-voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high-voltage wire is a V-shaped structure with a height of 100μm, a width of 40μm, and an array period of 100μm. Fig. 9 The cross-sectional shape of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 20 mm.

[0085] Example 7

[0086] A method for preparing a microstructured wire comprises the following steps:

[0087] Step S1, prepare a clean titanium-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of the die is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter is 25.1 mm. A layer of nano-diamond coating is coated on the microstructure on the surface of the inner hole of the wire drawing die by CVD method, and then polished, and the thickness of the nano-diamond coating is 50 μm.

[0088] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured copper high-voltage wire, the copper high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the copper high-voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high-voltage wire is a V-shaped structure with a height of 50μm, a width of 40μm, and an array period of 200μm. Fig.10As shown in the figure, the cross-section of the high voltage conductor is also circular, and its diameter is 25 mm.

[0089] Example 8

[0090] A method for preparing a microstructured wire comprises the following steps:

[0091] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 30 mm.

[0092] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high-voltage wire, the aluminum high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high-voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high-voltage wire is a V-shaped structure with a height of 50μm, a width of 40μm, and an array period of 300μm. Fig.11 The cross-sectional shape of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 30 mm.

[0093] Example 9

[0094] A method for preparing a microstructured wire comprises the following steps:

[0095] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 40 mm.

[0096] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high-voltage wire, the aluminum high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high-voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high-voltage wire is a V-shaped structure with a height of 50μm, a width of 40μm, and an array period of 1000μm. Fig.12 The cross-sectional shape of the high-voltage conductor is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 40 mm.

[0097] Example 10

[0098] A method for preparing a microstructured wire comprises the following steps:

[0099] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0100] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high voltage wire, the aluminum high voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high voltage wire is a trapezoidal structure with a height of 150nm and an array period of 100nm. Fig.13 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0101] Embodiment 11

[0102] A method for preparing a microstructured wire comprises the following steps:

[0103] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0104] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high voltage wire, the aluminum high voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high voltage wire is a trapezoidal structure with a height of 1μm and an array period of 1μm. Fig.14 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0105] Example 12

[0106] A method for preparing a microstructured wire comprises the following steps:

[0107] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0108] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high voltage wire, the aluminum high voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high voltage wire is a trapezoidal structure with a height of 10μm and an array period of 10μm. Fig.15 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0109] Example 13

[0110] A method for preparing a microstructured wire comprises the following steps:

[0111] Step S1, preparing a clean tungsten-based cemented carbide wire drawing die with a circular cross-section shape, the micro-nano structure on the surface of the inner hole of which is complementary to the microstructure to be prepared on the surface of the high-voltage conductor, and the inner diameter of which is 4 mm.

[0112] Step S2, using the prepared wire drawing die, by controlling the wire drawing parameters, continuously preparing the surface microstructured aluminum high-voltage wire, the aluminum high-voltage wire will completely replicate the micro-nano structure of the inner hole surface of the wire drawing die, and the microstructure formed on the surface of the aluminum high-voltage wire has good uniformity and consistency, and the required microstructured wire is obtained. The microstructure on the surface of the high-voltage wire is an arc structure with a height of 125μm, a radius of 80μm, and an array period of 200μm. Fig.16 The cross-sectional shape of the high-voltage wire is also circular, and its diameter is the same as the inner diameter of the wire drawing die, which is also 4 mm.

[0113] The properties of the microstructured wire of the present invention are as follows: (1) Hydrophobicity: Fig.17 As shown in Figure 2, the water contact angle of the microstructured wire is 149.8°; (2) Anti-icing performance: Fig.18 As shown, the ice-covering performance of aluminum plates with and without surface microstructures was compared. It can be seen that no icing occurred on the surface with microstructures, while icing occurred on the edge surface without microstructures.

[0114] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited to them. Any modifications, equivalent substitutions and improvements made by any technician familiar with the technical field within the technical scope disclosed by the present invention and within the spirit and principle of the present invention should be covered within the protection scope of the present invention. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be based on the scope defined by the claims.

Claims

1. A microstructured wire, It is characterized in that The invention comprises a high-voltage conductor body and a ring-shaped array microstructure on the surface of the high-voltage conductor body, wherein the microstructure is prepared based on the Cassie-Baxter model. When a liquid drop contacts the microstructured surface, the liquid drop can be suspended on the air pocket above the microstructure. This suspension state significantly reduces the actual contact area between the liquid drop and the surface of the microstructured conductor in contact, thereby greatly improving the hydrophobicity of the surface of the microstructured conductor. The Cassie-Baxter state of the microstructure: when a liquid drop contacts the surface, if there are microstructures on the surface, these microstructures can capture air to form a plurality of small air pockets. The liquid drop is suspended on these small air pockets instead of completely wetting the solid surface. In this state, the surface contact angle is greatly increased, making it easier for the liquid drop to roll off instead of spreading on the surface, thereby avoiding the liquid drop from staying on the conductor surface for a long time, thereby reducing the risk of icing. The microstructure is one or a combination of V-shaped microstructure, trapezoidal microstructure, rectangular microstructure and arc-shaped microstructure; the geometric characteristics of the microstructure enable it to capture more air when in contact with liquid droplets to form stable air pockets; the V-shaped microstructure and the trapezoidal microstructure are more likely to capture air when in contact with liquid droplets due to their sharp tops and inclined sides; the rectangular microstructure and the arc-shaped microstructure provide stable support points through flat or curved surfaces, so that the air pockets can be evenly distributed between the liquid droplets and the surface; The contact angles between the microstructure and the droplet are in the range of 150° to 160°: due to the reduced contact area between the droplet and the microstructure surface, the contact angle reaches 150° to 160°. This high contact angle makes the droplet appear almost spherical on the surface, further enhancing the possibility of the droplet rolling off. The top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

2. A microstructured wire according to claim 1, It is characterized in that The array period of the microstructure is in the range of 100nm to 1mm.

3. A microstructured wire according to claim 1, It is characterized in that The cross-sectional size of the high-voltage conductor body ranges from 1 mm to 50 mm.

4. The microstructured wire according to claim 1, It is characterized in that The material of the high-voltage conductor body is one of iron, aluminum, copper and alloys thereof.

5. The microstructured wire according to claim 1, It is characterized in that The high-voltage conductor body is one of a single conductor with a circular, rectangular or irregular cross-section and a stranded wire composed of a plurality of conductors with circular, rectangular or irregular cross-sections.

6. A method for preparing a microstructured wire, It is characterized in that The following steps are involved: Step S1, preparing a wire drawing die with a micro-nano structure on the inner hole surface; Step S2, using a wire drawing die with a micro-nano structure on the inner hole surface, and controlling the wire drawing parameters in the process by wire drawing nanoimprinting method, the high-voltage wire body passes through the wire drawing die, undergoes plastic deformation, and finally obtains a microstructured wire with a ring array microstructure formed on the surface.

7. A method for preparing a microstructured wire according to claim 6, It is characterized in that The material of the wire drawing die in step S1 is one of tungsten-based cemented carbide, titanium-based cemented carbide, chromium-based cemented carbide, die steel and polycrystalline diamond. The wire drawing parameters in the process of step S2 include wire drawing speed, wire drawing temperature, cooling rate, tensile force, lubrication method and tension. These parameters are controlled so that the high-voltage wire can completely imprint and replicate the micro-nano structure, ensure the uniformity and consistency of the microstructure formed on the surface of the high-voltage wire body, and obtain the required micro-structure wire; wherein the wire drawing speed is 1m / s~20m / s; the wire drawing temperature is 20℃~400℃; the cooling rate is 10℃ / s~100 ℃ / s; tensile force: 100N~10000N; lubrication method: dry lubrication, wet lubrication, emulsion lubrication; tension: 50N-500N; aluminum wire: drawing speed: 5m / s to 10m / s, drawing temperature: room temperature to 150℃, cooling rate: 20℃ / s to 50℃ / s, tensile force: 500N to 3kN, tension: 100N to 200N; copper wire: drawing speed: 10m / s to 20m / s, drawing temperature: 20℃ to 200℃, cooling rate: 30℃ / s to 80℃ / s, tensile force: 1kN to 10kN, tension: 200N to 500N.

8. The method for preparing a microstructured wire according to claim 6, It is characterized in that In step S1, the micro-nano structure on the inner hole surface of the wire drawing die is covered with a layer of nano-diamond coating.

9. The method for preparing a microstructured wire according to claim 6, It is characterized in that In step S2, the microstructure array period range of the annular array formed on the surface of the high-voltage conductor body is 100nm~1mm, the original shape of the high-voltage conductor body is circular, and the original size is 1.1~1.5 times the target size obtained by single drawing or 10~50 times the target size obtained by multiple drawing.

10. A method for preparing a microstructured wire according to claim 9, It is characterized in that The microstructure is one or more of a V-shaped microstructure, a trapezoidal microstructure, a rectangular microstructure and an arc-shaped microstructure, wherein the top angle range of the V-shaped microstructure is 30° to 70°, its height is 50nm to 1000μm, and its bottom width is 50nm to 750μm; the top width of the trapezoidal microstructure is 50nm to 500μm, its bottom width is 100nm to 1000μm, its height is 50nm to 750μm, and its inclination angle is 15° to 45°; the height of the rectangular microstructure is 50nm to 1000μm, and its width is 50nm to 750μm; the curvature radius of the arc-shaped microstructure is 25nm to 375μm, and its arc height is 20nm to 300μm.

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