Gallium nitride semiconductor material fixed-length cutting device and method

Abstract

The invention relates to the technical field of semiconductor cutting, in particular to a gallium nitride semiconductor material fixed-length cutting device and method.The gallium nitride semiconductor material fixed-length cutting device comprises a first supporting disc and a second supporting disc, and a plurality of supporting cylinders evenly distributed in the circumferential direction are arranged between the first supporting disc and the second supporting disc in a penetrating mode; a driving shaft which is coaxial with the supporting disc I and the supporting disc II is rotatably arranged between the supporting disc I and the supporting disc II in a penetrating manner and is positioned among the supporting cylinders, and propellers are arranged on the supporting cylinders; the propeller comprises a plurality of sets of receding holes formed in the supporting cylinder in the circumferential direction, clamping rods are arranged in the receding holes in a sliding mode, and rolling wheels located in the supporting cylinder are rotationally arranged at one ends of the clamping rods. And meanwhile, continuous gallium nitride semiconductor material conveying and cutting actions are realized through the cooperation of the propeller and the cutter, so that the production efficiency is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor cutting technology, and in particular to a device and method for cutting gallium nitride semiconductor materials to a fixed length. Background Art

[0002] Gallium nitride (GaN) is a wide bandgap semiconductor material with many excellent physical and chemical properties, including high thermal conductivity, high electron mobility, and the ability to withstand high voltage and high frequency operation. These characteristics make GaN have great potential in the manufacture of high-efficiency, high-power electronic devices, especially in the fields of LED lighting, laser diodes, and power electronic equipment. These advantages of GaN make it an ideal choice to replace traditional silicon materials, especially in situations requiring high temperature resistance, high frequency and high power applications.

[0003] However, these characteristics also mean that special care is required during processing to avoid material damage, and high-precision cutting techniques such as laser cutting or diamond wire cutting are usually used. These technologies can control the cutting depth and width with extremely high precision and reduce damage to the GaN material.

[0004] For example, a semiconductor material cutting device and method with publication number CN110497547A relates to the field of semiconductor technology. The prior art includes a base, a U-shaped frame is fixedly installed on the top of the base, a connecting port is opened on one side of the U-shaped frame, a cylinder is fixedly installed on the top inner wall of the connecting port, and a connecting cover is slidably connected to the inner wall of one side of the connecting port.

[0005] However, the above-mentioned prior art still has some defects when it comes to semiconductor cutting:

[0006] 1. The above-mentioned prior art drives the cutter to cut the semiconductor by driving the motor. In actual applications, the gallium nitride semiconductor material has high hardness and great brittleness, and is prone to cracks or damage during the processing. At the same time, if the cutting frequency of the cutter is fast, the high hardness of the gallium nitride semiconductor material will cause the cutter to wear rapidly during the cutting process, resulting in a shortened tool life; if the cutting frequency of the cutter is slow, the cutting efficiency will be reduced.

[0007] 2. The above-mentioned prior art utilizes the rotation of the roller to conveniently control the length of the semiconductor to be cut. In actual operation, even if the rotation of the roller seems to be uniform, due to the uneven friction, the roller may apply more pressure to the material in some areas and less pressure in other areas. This uneven pressure distribution will lead to inconsistent material delivery, which in turn affects the accuracy of the cutting length.

[0008] Based on this, and in accordance with the above-mentioned viewpoints, there is still room for improvement in the existing technology for semiconductor cutting. Summary of the invention

[0009] In order to solve the above technical problems, the present application provides a device and method for cutting gallium nitride semiconductor materials to a fixed length, which adopts the following technical solutions:

[0010] In a first aspect, a device for cutting gallium nitride semiconductor materials to length comprises a support plate 1 and a support plate 2, a plurality of support cylinders evenly distributed in the circumferential direction are arranged between the two support plates 1 and 2, a driving shaft coaxial with the support plate 1 and 2 is rotatably arranged between the two support plates, and the driving shaft is located between the plurality of support cylinders, and a propeller is arranged on the support cylinder;

[0011] The thruster includes a plurality of avoidance holes circumferentially opened on the support tube, a clamping rod is slidably arranged in the avoidance hole, a roller located in the support tube is rotatably arranged at one end of the clamping rod, an L-shaped spring support frame corresponding to the avoidance holes one by one is arranged on the outside of the support tube, a clamping spring is arranged between the L-shaped spring support frame and the clamping rod, and a thruster is arranged on the support plate 2.

[0012] Preferably, the propulsion member includes a support frame rotatably arranged on the support disk 2, one end of the driving shaft is rotated through the support frame and an incomplete gear 1 is arranged thereon, a pushing rod corresponding to the support tube one by one is passed through the support frame, the pushing rod is threadedly connected to the support frame, a clamping gear slidably connected to the pushing rod is rotatably arranged on the support frame, and the clamping gear is meshed with the incomplete gear 1.

[0013] Preferably, a push plate is rotatably provided at one end of the push rod, and the push plate is provided with a yielding groove corresponding to the roller one by one.

[0014] Preferably, an adjusting member is provided on the supporting plate 2;

[0015] The adjusting member includes a support frame and a second support plate which are rotatably connected, the second support plate is rotatably provided with an arc-shaped rack connected to the support frame, and the second support plate is rotatably provided with an adjusting gear meshing with the arc-shaped rack.

[0016] Preferably, a cutter is provided on the support plate;

[0017] The cutter comprises a rotating ring rotatably arranged on a support plate 1 and coaxial with the support plate 1, and the rotating ring is rotatably connected to the driving shaft, and a cutting wheel 1 is arranged at one end of the rotating ring;

[0018] The support plate 1 is provided with an annular slide rail, a slider is slidably provided on the annular slide rail, a cutting wheel 2 is rotatably provided on the slider, and a cutting wire is sleeved between the cutting wheel 1 and the cutting wheel 2.

[0019] Preferably, a limiter is provided on the support plate;

[0020] The limiter includes a connecting frame arranged on a supporting disk, one end of the driving shaft rotates through the connecting frame and is provided with an incomplete gear 2, a connecting sleeve corresponding to the supporting tube is slidably passed through the connecting frame, a limiting rod threadedly matched with the connecting sleeve is passed through the connecting sleeve, a limiting disk is arranged at one end of the limiting rod, and a threaded section is opened on the connecting sleeve.

[0021] Preferably, a transmission gear meshing with the second incomplete gear is rotatably provided on the connecting frame, and a protrusion corresponding to the threaded segment is provided on the transmission gear.

[0022] Preferably, the threaded section includes a threaded groove formed on a connecting sleeve, and a vertical groove connecting two ends of the threaded groove is formed on the connecting sleeve.

[0023] Preferably, a limit spring is provided between the limit plate and the connecting frame.

[0024] In a second aspect, a method for cutting gallium nitride semiconductor materials to a fixed length is provided, and the method of using the method comprises the following steps:

[0025] S1: When cutting the gallium nitride semiconductor material, firstly, the adjusting gear is rotated to make the arc-shaped rack drive the support frame to rotate on the supporting plate 2, so that the gallium nitride semiconductor material can be smoothly placed in the supporting tube;

[0026] S2: Then the driving shaft is driven to rotate. Each time the driving shaft rotates one circle, the propulsion member pushes the gallium nitride semiconductor material in the support cylinder to move a certain distance in sequence. At the same time, the gallium nitride semiconductor material causes the roller to rotate, so as to transport the gallium nitride semiconductor material in sequence.

[0027] S3: The cutter cuts the GaN semiconductor material in sequence as it moves in the support tube, thereby achieving fixed-length cutting of the GaN semiconductor material. Meanwhile, the cooperation between the pusher and the cutter realizes continuous conveying and cutting of the GaN semiconductor material.

[0028] S4: At the same time, the cutting wire on the cutting wheel 2 is reciprocatedly wound between the cutting wheel 1, thereby achieving precise cutting of the gallium nitride semiconductor material.

[0029] In summary, the present application includes at least one of the following beneficial technical effects:

[0030] 1. The cutter of the present invention will cut the gallium nitride semiconductor material in sequence as it moves in the support tube, thereby achieving fixed-length cutting of the gallium nitride semiconductor material. At the same time, the cooperation between the pusher and the cutter can realize continuous gallium nitride semiconductor material transportation and cutting, thereby improving production efficiency.

[0031] 2. The cutting wire of the present invention is reciprocatedly wound between the cutting wire on the cutting wheel 2 and the cutting wheel 1, which not only improves the service life of the cutting wire, but also ensures the continuity and stability of the cutting process. The recycling of the cutting wire reduces the replacement frequency and improves production efficiency. Moreover, by accurately controlling the rotation of the cutting wheel and the movement of the slider, precise cutting of gallium nitride semiconductor materials is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of the present invention.

[0033] Figure 2 It is a partial structural schematic diagram of the present invention.

[0034] Figure 3 It is a structural schematic diagram of the support tube of the present invention.

[0035] Figure 4 It is a cross-sectional view of the support tube of the present invention.

[0036] Figure 5 It is a structural schematic diagram of the propeller of the present invention.

[0037] Figure 6 It is a cross-sectional view of the propeller of the present invention.

[0038] Figure 7 The present invention Figure 6 A partial enlarged view of point A in the middle.

[0039] Figure 8 It is a schematic structural diagram of the cutter of the present invention.

[0040] Fig. 9 It is a cross-sectional view of the cutter of the present invention.

[0041] Fig.10 The present invention Fig. 9 A partial enlarged view of point B in the middle.

[0042] Fig.11 It is a schematic structural diagram of the limiter of the present invention.

[0043] Fig.12 It is a cross-sectional view of the limiter of the present invention.

[0044] Fig.13 The present invention Fig.13 A partial enlarged view of point C in the middle.

[0045] Fig.14 It is a schematic diagram of the structure between the protrusion and the thread segment of the present invention.

[0046] Description of the accompanying drawings: 1, support plate 1; 2, support plate 2; 3, support cylinder; 4, driving shaft; 5, propeller; 51, avoidance hole; 52, clamping rod; 53, roller; 54, L-shaped spring support; 55, clamping spring; 6, propulsion member; 61, support frame; 62, incomplete gear 1; 63, push rod; 64, clamping gear; 65, push plate; 66, give way groove; 7, adjustment member; 71, arc-shaped rack; 72 , adjusting gear; 8, cutter; 81, rotating ring; 82, cutting wheel one; 83, annular slide rail; 84, slider; 85, cutting wheel two; 86, cutting wire; 9, limiter; 91, connecting frame; 92, incomplete gear two; 93, connecting sleeve; 94, limit rod; 95, limit plate; 96, limit spring; 97, transmission gear; 98, bump; 99, threaded section; 991, thread groove; 992, vertical groove. DETAILED DESCRIPTION

[0047] The following is combined with Figures 1 to 14 This application is described in further detail.

[0048] The embodiments of the present application disclose a device and method for cutting gallium nitride semiconductor materials to a fixed length, which provides a stable and continuous material supply for the cutting process by pushing the gallium nitride semiconductor materials in sequence, thereby improving the cutting accuracy and efficiency.

[0049] Embodiment 1:

[0050] Reference Figure 1 , Figure 2 and Figure 3 As shown, a device for cutting gallium nitride semiconductor materials to a fixed length comprises a support plate 1 and a support plate 2, wherein a plurality of support tubes 3 evenly distributed in the circumferential direction are arranged between the two support plates 1 and 2.

[0051] When cutting the gallium nitride semiconductor material, the gallium nitride semiconductor material is first placed in the support tube 3. At this time, the pusher 5 will clamp the gallium nitride semiconductor material to fix the gallium nitride semiconductor material in the support tube 3 and enable the gallium nitride semiconductor material to move along the axial direction of the support tube 3.

[0052] A driving shaft 4 is rotatably provided between the support disk 1 and the support disk 2, and then the driving shaft 4 is driven to rotate by the existing motor driving technology. The driving shafts 4 of the support disk 1 and the support disk 2 are coaxial, and the driving shaft 4 is located between a plurality of support cylinders 3. The rotating driving shaft 4 will drive the propeller 5 provided on the support cylinder 3 to work, and the propeller 5 will push the gallium nitride semiconductor materials in the plurality of support cylinders 3 in sequence. Every time the driving shaft 4 rotates one circle, the propeller 5 will push the gallium nitride semiconductor materials in the support cylinder 3 to move a certain distance in sequence.

[0053] During this process, the rotating drive shaft 4 will drive the cutter 8 set on the support plate 1 to work, and the cutter 8 will cut the gallium nitride semiconductor material in sequence as it moves in the support tube 3, thereby realizing fixed-length cutting of the gallium nitride semiconductor material. At the same time, the cooperation between the pusher 5 and the cutter 8 can realize continuous gallium nitride semiconductor material transportation and cutting, thereby improving production efficiency.

[0054] Reference Figure 2 , Figure 3 and Figure 4 As shown, specifically, the thruster 5 includes a plurality of avoidance holes 51 circumferentially opened on the support tube 3, a clamping rod 52 is slidably arranged in the avoidance holes 51, a roller 53 is rotatably arranged at one end of the clamping rod 52, and an L-shaped spring support frame 54 corresponding to the avoidance holes 51 is arranged on the outside of the support tube 3.

[0055] When the gallium nitride semiconductor material is placed in the support tube 3, the gallium nitride semiconductor material will resist the roller 53 located in the support tube 3, so that the roller 53 drives the clamping rod 52 to move out of the support tube 3 and compresses the clamping spring 55 arranged between the L-shaped spring support frame 54 and the clamping rod 52. Multiple rollers 53 will place the gallium nitride semiconductor material in the middle position in the support tube 3, and at the same time, the roller 53 rotates under the resistance of the gallium nitride semiconductor material.

[0056] Reference Figure 5 , Figure 6 and Figure 7 As shown, the rotating driving shaft 4 will drive the propeller 6 set on the supporting disk 2 to work. Every time the driving shaft 4 rotates one circle, the propeller 6 will drive the gallium nitride semiconductor material in the supporting cylinder 3 to move a certain distance in sequence. At the same time, the gallium nitride semiconductor material will resist the roller 53, causing the roller 53 to rotate to transport the gallium nitride semiconductor material in sequence.

[0057] Among them, the propulsion member 6 includes a support frame 61 rotatably arranged on the support disk 2, one end of the driving shaft 4 rotates through the support frame 61 and is provided with an incomplete gear 62, a pushing rod 63 corresponding to the support tube 3 is passed through the support frame 61, and a clamping gear 64 is rotatably arranged on the support frame 61, and the clamping gear 64 is meshed with the incomplete gear 62.

[0058] When the driving shaft 4 rotates, the rotating driving shaft 4 will drive the incomplete gear 62 to rotate together, and the complete gear 62 will sequentially engage with the clamping gear 64 that is slidably connected to the pushing rod 63, so that the multiple clamping gears 64 on the support frame 61 rotate sequentially. Each rotation of the clamping gear 64 will drive the pushing rod 63 that is slidably connected to it to rotate, and the rotating pushing rod 63 will move into the support tube 3 through the threaded connection with the support frame 61.

[0059] The moving push rod 63 will drive the push plate 65 which is rotatably arranged at one end thereof, so that the push plate 65 contacts the gallium nitride semiconductor material, thereby pushing the gallium nitride semiconductor material to move a certain distance in sequence in the support tube 3, so that the roller 53 rotates to transport the gallium nitride semiconductor material in sequence; the push plate 65 is provided with a clearance groove 66 which corresponds to the roller 53 one by one, and the clearance groove 66 can prevent the push plate 65 from contacting the roller 53, so as to ensure that the roller 53 can push the gallium nitride semiconductor material to pass smoothly, and the push plate 65 does not collide with the roller 53.

[0060] Reference Figure 5 and Figure 6 As shown, an adjusting member 7 is provided on the supporting plate 2, and the adjusting member 7 is used to adjust the angle of the supporting frame 61 so that the gallium nitride semiconductor material can be smoothly placed in the supporting tube 3.

[0061] Specifically, the adjusting member 7 includes a support frame 61 and a second support plate 2 that are rotatably connected, and an arc-shaped rack 71 connected to the support frame 61 is rotatably provided on the second support plate 2.

[0062] When cutting the gallium nitride semiconductor material, first, by rotating the adjusting gear 72 rotatably arranged on the support disk 2, the adjusting gear 72 will drive the support frame 61 to rotate on the support disk 2 through the engagement with the arc-shaped rack 71, so that the support frame 61 drives the pushing rod 63 to intersect with the support tube 3, so that the gallium nitride semiconductor material can be smoothly placed in the support tube 3.

[0063] Reference Fig. 9 and Fig.10 As shown, specifically, the cutter 8 includes a rotating ring 81 rotatably penetrated on the support disk 1 and coaxial therewith, and the rotating ring 81 is rotatably connected to the driving shaft 4, a cutting wheel 1 82 is provided at one end of the rotating ring 81, an annular slide rail 83 is provided on the support disk 1, a slider 84 is slidably provided on the annular slide rail 83, and a cutting wheel 2 85 is rotatably provided on the slider 84.

[0064] The slider 84 is driven to move on the annular slide rail 83 by the existing driving technology, and the slider 84 drives the cutting wheel 1 82 to rotate around the supporting plate 1 , and the cutting wire 86 sleeved between the cutting wheel 1 82 and the cutting wheel 2 85 cuts the gallium nitride semiconductor material.

[0065] At the same time, the rotating ring 81 drives the cutting wheel 1 82 to rotate, so that the cutting wire 86 on the cutting wheel 2 85 is wound around the cutting wheel 1 82. After the cutting wire 86 on the cutting wheel 2 85 is completely wound around the cutting wheel 1 82, the cutting wheel 1 82 and the cutting wheel 2 85 are reversed, so that the cutting wire 86 on the cutting wheel 1 82 is wound around the cutting wheel 2 85. Such reciprocating winding not only improves the service life of the cutting wire 86, but also ensures the continuity and stability of the cutting process. The recycling of the cutting wire 86 reduces the replacement frequency and improves the production efficiency. And by accurately controlling the rotation of the cutting wheel 1 82 and the movement of the slider 84, the precise cutting of the gallium nitride semiconductor material is achieved.

[0066] Embodiment 2:

[0067] Reference Fig.11 , Fig.12 , Fig.13 and Fig.14 As shown, on the basis of the first embodiment, a limiter 9 is provided on the support plate, and the limiter 9 is used to limit the length of the gallium nitride semiconductor material extending each time.

[0068] Specifically, the limiter 9 includes a connecting frame 91 arranged on the support plate 1, one end of the driving shaft 4 rotates through the connecting frame 91 and is provided with an incomplete gear 2 92, a connecting sleeve 93 corresponding to the support tube 3 is slidably passed through the connecting frame 91, a limiting rod 94 threadedly matched with the connecting sleeve 93 is passed through the connecting sleeve 93, a limiting plate 95 is arranged at one end of the limiting rod 94, a threaded section 99 is opened on the connecting sleeve 93, and a transmission gear 97 meshing with the incomplete gear 2 92 is rotatably provided on the connecting frame 91.

[0069] Each time the gallium nitride semiconductor material extends, the limiting plate 95 disposed at one end of the limiting rod 94 will press against the gallium nitride semiconductor material to extend the length thereof so that the cutting wire 86 can smoothly cut the gallium nitride semiconductor material.

[0070] The rotating drive shaft 4 will drive the incomplete gear 2 92 to mesh and rotate. The rotating incomplete gear 2 92 will mesh with multiple transmission gears 97 in sequence, so that the multiple transmission gears 97 are transmitted in sequence. The rotating transmission will drive the protrusion 98 corresponding to the threaded segment 99 set on the transmission gear 97.

[0071] The protrusion 98 moves the connecting sleeve 93 inward through the threaded section 99 and compresses the limiting spring 96 provided between the limiting plate 95 and the connecting frame 91, so that the cut GaN semiconductor material can fall smoothly and continue to extend.

[0072] Among them, the threaded section 99 includes a threaded groove 991 opened on the connecting sleeve 93, and a vertical groove 992 connecting the two ends of the threaded groove 991 is opened on the connecting sleeve 93; each time the transmission gear 97 rotates, the protrusion 98 will interfere with the threaded groove 991, so that the connecting sleeve 93 drives the limiting rod 94 away from the supporting tube 3 and compresses the limiting spring 96, so that the cut gallium nitride semiconductor material can fall smoothly.

[0073] Then the compressed limit spring 96 will push the limit plate 95, so that the limit rod 94 drives the connecting sleeve 93 to move, and the limit plate 95 will contact the gallium nitride semiconductor material again. During this process, the protrusion 98 will move back to the initial state in the vertical groove 992.

[0074] The extending length of the limiting plate 95 is changed by rotating the limiting rod 94, so as to control the extending length of the material and ensure the consistency of the cutting quality.

[0075] Finally, the present invention also provides a method for cutting gallium nitride semiconductor materials to a fixed length, and the method for using the method comprises the following steps:

[0076] S1: Cutting preparation. When cutting the gallium nitride semiconductor material, first, by rotating the adjusting gear 72 rotatably arranged on the support disk 2, the adjusting gear 72 will drive the support frame 61 to rotate on the support disk 2 through the engagement with the arc-shaped rack 71, so that the support frame 61 drives the pushing rod 63 to intersect with the support tube 3, so that the gallium nitride semiconductor material can be smoothly placed in the support tube 3.

[0077] S2: Then, the drive shaft 4 is driven to rotate by the existing motor driving technology. Every time the drive shaft 4 rotates one circle, the propeller 6 will drive the gallium nitride semiconductor material in the support tube 3 to move a certain distance in sequence. At the same time, the gallium nitride semiconductor material will resist the roller 53, causing the roller 53 to rotate to transport the gallium nitride semiconductor material in sequence.

[0078] S3: The cutter 8 will cut the gallium nitride semiconductor material in sequence as it moves in the support tube 3, thereby achieving fixed-length cutting of the gallium nitride semiconductor material. At the same time, the cooperation between the pusher 5 and the cutter 8 can achieve continuous gallium nitride semiconductor material transportation and cutting, thereby improving production efficiency.

[0079] S4: At the same time, the cutting wire 86 on the cutting wheel 2 85 is wound onto the cutting wheel 1 82. After the cutting wire 86 on the cutting wheel 2 85 is completely wound onto the cutting wheel 1 82, the cutting wheels 1 82 and 85 are reversed to make the cutting wire 86 on the cutting wheel 1 82 wound onto the cutting wheel 2 85. The reciprocating winding is repeated to achieve precise cutting of the gallium nitride semiconductor material.

[0080] S5: Each time the transmission gear 97 rotates, the protrusion 98 will abut against the thread groove 991, so that the connecting sleeve 93 drives the limiting rod 94 away from the supporting tube 3 and compresses the limiting spring 96, so that the cut gallium nitride semiconductor material can fall smoothly.

[0081] The embodiments of this specific implementation method are all preferred embodiments of the present invention, and are not intended to limit the protection scope of the present invention. Therefore, any equivalent changes made based on the structure, shape, and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A device for cutting gallium nitride semiconductor materials to length, comprising a support plate 1 (1) and a support plate 2 (2), characterized in that: A plurality of support cylinders (3) evenly distributed in the circumferential direction are arranged between the two support disks 1 (1) and 2 (2); a drive shaft (4) coaxial with the support disks 1 (1) and 2 (2) is rotatably arranged between the support disks 1 (1) and 2 (2); the drive shaft (4) is located between the plurality of support cylinders (3); and a propeller (5) is arranged on the support cylinder (3); The thruster (5) comprises a plurality of avoidance holes (51) circumferentially opened on the support tube (3), a clamping rod (52) being slidably arranged in the avoidance holes (51), a roller (53) located in the support tube (3) being rotatably arranged at one end of the clamping rod (52), an L-shaped spring support frame (54) corresponding to the avoidance holes (51) being arranged on the outer side of the support tube (3), a clamping spring (55) being arranged between the L-shaped spring support frame (54) and the clamping rod (52), and a thruster (6) being arranged on the support plate (2).

2. The device for cutting gallium nitride semiconductor materials to length according to claim 1, characterized in that: The propulsion member (6) comprises a support frame (61) rotatably arranged on the support plate (2); one end of the driving shaft (4) is rotatably passed through the support frame (61) and is provided with an incomplete gear (62); a push rod (63) corresponding to the support tube (3) is passed through the support frame (61); the push rod (63) is threadedly connected to the support frame (61); a clamping gear (64) slidably connected to the push rod (63) is rotatably arranged on the support frame (61), and the clamping gear (64) is meshed with the incomplete gear (62).

3. The device for cutting gallium nitride semiconductor materials to length according to claim 2, characterized in that: A push plate (65) is rotatably provided at one end of the push rod (63), and a clearance groove (66) corresponding to the roller (53) is provided on the push plate (65).

4. The device for cutting gallium nitride semiconductor materials to length according to claim 2, characterized in that: The second support plate (2) is provided with an adjusting member (7); The adjusting member (7) comprises a support frame (61) and a second support plate (2) which are rotatably connected, the second support plate (2) being rotatably provided with an arc-shaped rack (71) connected to the support frame (61), and the second support plate (2) being rotatably provided with an adjusting gear (72) meshing with the arc-shaped rack (71).

5. The device for cutting gallium nitride semiconductor materials to length according to claim 1, characterized in that: The support plate 1 (1) is provided with a cutter (8); The cutter (8) comprises a rotating ring (81) rotatably arranged on the support disc (1) and coaxial with the support disc, and the rotating ring (81) is rotatably connected to the drive shaft (4), and a cutting wheel (82) is arranged at one end of the rotating ring (81); The support plate 1 (1) is provided with an annular slide rail (83), a slider (84) is slidably provided on the annular slide rail (83), a cutting wheel 2 (85) is rotatably provided on the slider (84), and a cutting wire (86) is sleeved between the cutting wheel 1 (82) and the cutting wheel 2 (85).

6. The device for cutting gallium nitride semiconductor materials to length according to claim 1, characterized in that: A limiter (9) is provided on the support plate (1); The limiter (9) comprises a connecting frame (91) arranged on a supporting disk (1); one end of the driving shaft (4) is rotated to pass through the connecting frame (91) and is provided with an incomplete gear (92); a connecting sleeve (93) corresponding to the supporting cylinder (3) is slidably passed through the connecting frame (91); a limiting rod (94) threadedly matched with the connecting sleeve (93) is passed through the connecting sleeve (93); a limiting disk (95) is arranged at one end of the limiting rod (94); and a threaded section (99) is provided on the connecting sleeve (93).

7. The device for cutting gallium nitride semiconductor materials to length according to claim 6, characterized in that: A transmission gear (97) meshing with the second incomplete gear (92) is rotatably arranged on the connecting frame (91), and a convex block (98) corresponding to the threaded section (99) is arranged on the transmission gear (97).

8. The device for cutting gallium nitride semiconductor materials to length according to claim 7, characterized in that: The threaded section (99) comprises a threaded groove (991) provided on the connecting sleeve (93), and a vertical groove (992) connecting the two ends of the threaded groove (991) is provided on the connecting sleeve (93).

9. The device for cutting gallium nitride semiconductor material to length according to claim 6, characterized in that: A limit spring (96) is arranged between the limit plate (95) and the connecting frame (91).

10. A method for cutting a gallium nitride semiconductor material to a fixed length, comprising a gallium nitride semiconductor material cutting to a fixed length device as claimed in any one of claims 1 to 9, characterized in that: The method of use includes the following steps: S1: When cutting the gallium nitride semiconductor material, firstly, the adjusting gear (72) is rotated to make the arc-shaped rack (71) drive the support frame (61) to rotate on the second support plate (2), so that the gallium nitride semiconductor material can be smoothly placed in the support tube (3); S2: Then the driving shaft (4) is driven to rotate. Each time the driving shaft (4) rotates one circle, the pushing member (6) pushes the gallium nitride semiconductor material in the supporting cylinder (3) to move a certain distance in sequence. At the same time, the gallium nitride semiconductor material causes the roller (53) to rotate, so as to transport the gallium nitride semiconductor material in sequence. S3: the cutter (8) cuts the gallium nitride semiconductor material in sequence as it moves in the support tube (3), thereby achieving fixed-length cutting of the gallium nitride semiconductor material. At the same time, the cooperation between the pusher (5) and the cutter (8) enables continuous conveying and cutting of the gallium nitride semiconductor material. S4: At the same time, the cutting wire (86) on the cutting wheel 2 (85) is reciprocatedly wound between the cutting wire (86) and the cutting wheel 1 (82), thereby achieving accurate cutting of the gallium nitride semiconductor material.

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