Industrial chip atomic clock temperature adaptive control method and system

Abstract

The invention discloses an industrial chip atomic clock temperature adaptive control method and system, and the method comprises the steps: obtaining the chip information of a chip in real time, the chip information comprising the current temperature of each position, the effective area of the chip, the power of the chip, the material density, the specific heat capacity, and the heat conductivity of each layer of the chip; setting a temperature monitoring function of each position of the chip, and monitoring the temperature change condition of each position in real time according to the chip information; setting a temperature monitoring function between layers of the chip, and monitoring the temperature change condition of each layer of the chip in real time according to the chip information; and a chip power adjustment model is set, and the power of the chip is adjusted in real time through PID according to the temperature change condition, so that the temperature self-adaptive control is completed.

Description

Technical Field

[0001] The present invention belongs to the technical field of chip temperature control, and more specifically, relates to an industrial-grade chip atomic clock temperature adaptive control method and system. Background Art

[0002] PID (Proportional-Integral-Derivative) is a control loop feedback mechanism widely used in industrial control systems. The PID controller continuously calculates the error value (the difference between the desired value and the actual value) and corrects it based on the proportional, integral and differential terms to achieve the control target.

[0003] However, in the field of industrial-grade chip design, the existing PID technology cannot accurately and adaptively control the temperature of industrial-grade chips. Summary of the invention

[0004] In order to solve the above technical problems, the present invention proposes an industrial-grade chip atomic clock temperature adaptive control method, comprising:

[0005] Acquire chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity and thermal conductivity of each layer of the chip;

[0006] Setting a temperature monitoring function for each position of the chip, and monitoring the temperature change at each position in real time according to the chip information;

[0007] Setting a temperature monitoring function between each layer of the chip, and monitoring the temperature change of each layer of the chip in real time according to the chip information;

[0008] Set the chip power adjustment model and adjust the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

[0009] Furthermore, the temperature monitoring function of each position of the chip includes:

[0010]

[0011] Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

[0012] Furthermore, the temperature monitoring function between each layer of the chip includes:

[0013]

[0014] Among them, ρ iis the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature of the chip at the position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th chip layer and the j-th chip layer.

[0015] Furthermore, the chip power adjustment model includes:

[0016]

[0017] Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

[0018] Furthermore, the difference index e between the current temperature and the target temperature nonlinear (t) include:

[0019] e nonlinear (t)

[0020] =(T tanget -T(x,y,t))+α′·(T tanget -T(x, y, t) 2 +β′·(T tanget -T(x, y, t))·T(x, y, t)

[0021] Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

[0022] The present invention also proposes an industrial-grade chip atomic clock temperature adaptive control system, comprising:

[0023] An information acquisition module, used for acquiring chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity and thermal conductivity of each layer of the chip;

[0024] The first temperature monitoring module is used to set a temperature monitoring function for each position of the chip, and monitor the temperature change at each position in real time according to the chip information;

[0025] The second temperature monitoring module is used to set the temperature monitoring function between each layer of the chip, and monitor the temperature change of each layer of the chip in real time according to the chip information;

[0026] The power adjustment module is used to set the chip power adjustment model and adjust the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

[0027] Furthermore, the temperature monitoring function of each position of the chip includes:

[0028]

[0029] Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

[0030] Furthermore, the temperature monitoring function between each layer of the chip includes:

[0031]

[0032] Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, Tj (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th layer of the chip and the,th layer of the chip.

[0033] Furthermore, the chip power adjustment model includes:

[0034]

[0035] Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

[0036] Furthermore, the difference index e between the current temperature and the target temperature nonlinear (t) include:

[0037] e nonlinear (t)

[0038] =(T tanget -T(x,y,t))+α′·(T tanget -T(x, y, t) 2 +β′·(T tanget -T(x, y, t))·T(x, y, t)

[0039] Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

[0040] In general, the above technical solution conceived by the present invention has the following beneficial effects compared with the prior art:

[0041] Through the above technical scheme, the present invention can monitor the temperature changes at each position of the chip in real time by setting a temperature monitoring function at each position of the chip; set a temperature monitoring function between each layer of the chip to monitor the temperature changes of each layer of the chip in real time; set a chip power adjustment model, and adjust the power of the chip in real time through PID according to the temperature changes, thereby completing temperature adaptive control. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 is a flow chart of the method of embodiment 1 of the present invention;

[0043] Figure 2 It is a structural diagram of the system of embodiment 2 of the present invention. DETAILED DESCRIPTION

[0044] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0045] The method provided by the present invention can be implemented in the following terminal environment, and the terminal may include one or more of the following components: a processor, a storage medium, and a display screen. The storage medium stores at least one instruction, and the instruction is loaded and executed by the processor to implement the method described in the following embodiment.

[0046] The processor may include one or more processing cores. The processor uses various interfaces and lines to connect various parts in the entire terminal, and executes various functions of the terminal and processes data by running or executing instructions, programs, code sets or instruction sets stored in the storage medium, and calling data stored in the storage medium.

[0047] The storage medium may include a random access memory (RAM) or a read-only memory (ROM). The storage medium may be used to store instructions, programs, codes, code sets or instructions.

[0048] The display screen is used to display the user interface of each application.

[0049] In addition, those skilled in the art can understand that the structure of the above terminal does not constitute a limitation on the terminal, and the terminal may include more or fewer components, or combine certain components, or arrange the components differently. For example, the terminal also includes components such as a radio frequency circuit, an input unit, a sensor, an audio circuit, and a power supply, which will not be described in detail here.

[0050] Example 1

[0051] like Figure 1As shown, an embodiment of the present invention provides an industrial-grade chip atomic clock temperature adaptive control method, comprising:

[0052] Step 101, acquiring chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity and thermal conductivity of each layer of the chip;

[0053] Step 102, setting a temperature monitoring function for each position of the chip, and monitoring the temperature change at each position in real time according to the chip information;

[0054] Specifically, the temperature monitoring function of each position of the chip includes:

[0055]

[0056] Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

[0057] Step 103, setting a temperature monitoring function between each layer of the chip, and monitoring the temperature change of each layer of the chip in real time according to the chip information;

[0058] Specifically, the temperature monitoring function between each layer of the chip includes:

[0059]

[0060] Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th layer of the chip and the,th layer of the chip.

[0061] Step 104, setting a chip power adjustment model, and adjusting the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

[0062] Specifically, the chip power adjustment model includes:

[0063]

[0064] Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

[0065] Specifically, the difference index e between the current temperature and the target temperature nonlinear (t) include:

[0066] e nonlinear (t)

[0067] =(T tanget -T(x,y,t))+α′·(T tanget -T(x, y, t) 2 +β′·(T tanget -T(x, y, t))·T(x, y, t)

[0068] Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

[0069] Example 2

[0070] like Figure 2 As shown, the embodiment of the present invention also provides an industrial-grade chip atomic clock temperature adaptive control system, including:

[0071] An information acquisition module, used for acquiring chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity and thermal conductivity of each layer of the chip;

[0072] The first temperature monitoring module is used to set a temperature monitoring function for each position of the chip, and monitor the temperature change at each position in real time according to the chip information;

[0073] Specifically, the temperature monitoring function of each position of the chip includes:

[0074]

[0075] Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

[0076] The second temperature monitoring module is used to set the temperature monitoring function between each layer of the chip, and monitor the temperature change of each layer of the chip in real time according to the chip information;

[0077] Specifically, the temperature monitoring function between each layer of the chip includes:

[0078]

[0079] Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th layer of the chip and the,th layer of the chip.

[0080] The power adjustment module is used to set the chip power adjustment model and adjust the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

[0081] Specifically, the chip power adjustment model includes:

[0082]

[0083] Among them, Pcomp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

[0084] Specifically, the difference index e between the current temperature and the target temperature nonlinear (t) include:

[0085] e nonlinear (t)

[0086] =(T tanget -T(x,y,t))+α′·(T tanget -T(x, y, t) 2 +β′·(T tanget -T(x, y, t))·T(x, y, t)

[0087] Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

[0088] Example 3

[0089] The embodiment of the present invention further provides a storage medium storing a plurality of instructions, wherein the instructions are used to implement the industrial-grade chip atomic clock temperature adaptive control method.

[0090] Optionally, in this embodiment, the above storage medium may be located in any computer terminal in a computer terminal group in a computer network, or in any mobile terminal in a mobile terminal group.

[0091] Optionally, in this embodiment, the storage medium is configured to store program codes for executing the following steps: Step 101, obtaining chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity, and thermal conductivity of each layer of the chip;

[0092] Step 102, setting a temperature monitoring function for each position of the chip, and monitoring the temperature change at each position in real time according to the chip information;

[0093] Specifically, the temperature monitoring function of each position of the chip includes:

[0094]

[0095] Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

[0096] Step 103, setting a temperature monitoring function between each layer of the chip, and monitoring the temperature change of each layer of the chip in real time according to the chip information;

[0097] Specifically, the temperature monitoring function between each layer of the chip includes:

[0098]

[0099] Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th layer of the chip and the,th layer of the chip.

[0100] Step 104, setting a chip power adjustment model, and adjusting the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

[0101] Specifically, the chip power adjustment model includes:

[0102]

[0103] Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κp is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

[0104] Specifically, the difference index e between the current temperature and the target temperature nonlinear (t) include:

[0105] e nonlinear (t)

[0106] =(T tanget -T(x,y,t))+α′·(T tanget -T(x, y, t) 2 +β′·(T tanget -T(x, y, t))·T(x, y, t)

[0107] Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

[0108] Example 4

[0109] An embodiment of the present invention also proposes an electronic device, including a processor and a storage medium connected to the processor, wherein the storage medium stores multiple instructions, and the instructions can be loaded and executed by the processor so that the processor can execute the industrial-grade chip atomic clock temperature adaptive control method.

[0110] Specifically, the electronic device of this embodiment may be a computer terminal, and the computer terminal may include: one or more processors, and a storage medium.

[0111] Among them, the storage medium can be used to store software programs and modules, such as an industrial-grade chip atomic clock temperature adaptive control method in an embodiment of the present invention, and the corresponding program instructions / modules. The processor executes various functional applications and data processing by running the software programs and modules stored in the storage medium, that is, realizing the above-mentioned industrial-grade chip atomic clock temperature adaptive control method. The storage medium may include a high-speed random storage medium, and may also include a non-volatile storage medium, such as one or more magnetic storage systems, flash memory, or other non-volatile solid-state storage media. In some instances, the storage medium may further include a storage medium remotely arranged relative to the processor, and these remote storage media may be connected to the terminal via a network. Examples of the above-mentioned network include, but are not limited to, the Internet, an intranet, a local area network, a mobile communication network, and combinations thereof.

[0112] The processor may call the information and application program stored in the storage medium through the transmission system to perform the following steps: Step 101, obtaining chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity, and thermal conductivity of each layer of the chip;

[0113] Step 102, setting a temperature monitoring function for each position of the chip, and monitoring the temperature change at each position in real time according to the chip information;

[0114] Specifically, the temperature monitoring function of each position of the chip includes:

[0115]

[0116] Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

[0117] Step 103, setting a temperature monitoring function between each layer of the chip, and monitoring the temperature change of each layer of the chip in real time according to the chip information;

[0118] Specifically, the temperature monitoring function between each layer of the chip includes:

[0119]

[0120] Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th layer of the chip and the,th layer of the chip.

[0121] Step 104, setting a chip power adjustment model, and adjusting the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

[0122] Specifically, the chip power adjustment model includes:

[0123]

[0124] Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

[0125] Specifically, the difference index e between the current temperature and the target temperature nonlinear (t) include:

[0126] e nonlinear (t)

[0127] =(T tanget -T(x,y,t))+α′·(T tanget -T(x, y, t) 2 +β′·(T tanget -T(x, y, t))·T(x, y, t)

[0128] Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

[0129] The serial numbers of the above embodiments of the present invention are only for description and do not represent the advantages or disadvantages of the embodiments.

[0130] In the above embodiments of the present invention, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0131] In the several embodiments provided by the present invention, it should be understood that the disclosed technical content can be implemented in other ways. Among them, the system embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of units or modules, which can be electrical or other forms.

[0132] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0133] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0134] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a number of instructions for a computer device (which can be a personal computer, a server or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, read-only storage medium (ROM, Read-Only Memory), random access storage medium (RAM, Random Access Memory), mobile hard disk, disk or optical disk and other media that can store program code.

[0135] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. An industrial-grade chip atomic clock temperature adaptive control method, characterized in that: include: Acquire chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity and thermal conductivity of each layer of the chip; Setting a temperature monitoring function for each position of the chip, and monitoring the temperature change at each position in real time according to the chip information; Setting a temperature monitoring function between each layer of the chip, and monitoring the temperature change of each layer of the chip in real time according to the chip information; Set the chip power adjustment model and adjust the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

2. The method for temperature adaptive control of an industrial-grade chip atomic clock according to claim 1, characterized in that: The temperature monitoring function of each position of the chip includes: Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

3. The temperature adaptive control method of an industrial-grade chip atomic clock according to claim 1, characterized in that: The temperature monitoring function between each layer of the chip includes: Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th chip layer and the j-th chip layer.

4. The method for temperature adaptive control of an industrial-grade chip atomic clock according to claim 1, characterized in that: The chip power adjustment model includes: Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, K i0 is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

5. The method for temperature adaptive control of an industrial-grade chip atomic clock according to claim 4, characterized in that: The difference index e between the current temperature and the target temperature nonlinear (t) include: e nonlinear (t) =(T tanget -T(x,y,t))+α′·(T tanget -T(x,y,t)) 2 +β·(T tange -T(x,y,t))·T(x,y,t) Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

6. An industrial-grade chip atomic clock temperature adaptive control system, characterized in that: include: An information acquisition module, used for acquiring chip information of the chip in real time, wherein the chip information includes: current temperature at each position, effective area of ​​the chip, power of the chip, material density, specific heat capacity and thermal conductivity of each layer of the chip; The first temperature monitoring module is used to set a temperature monitoring function for each position of the chip, and monitor the temperature change at each position in real time according to the chip information; The second temperature monitoring module is used to set the temperature monitoring function between each layer of the chip, and monitor the temperature change of each layer of the chip in real time according to the chip information; The power adjustment module is used to set the chip power adjustment model and adjust the chip power in real time through PID according to temperature changes, thereby achieving complete temperature adaptive control.

7. An industrial-grade chip atomic clock temperature adaptive control system as claimed in claim 6, characterized in that: The temperature monitoring function of each position of the chip includes: Wherein, T(x, y, t) is the current temperature at the chip position (x, y) at time t, α is the thermal diffusion coefficient, β is the influence factor of power on temperature change, A is the effective area of ​​the chip, and P(t) is the power of the chip at time t.

8. An industrial-grade chip atomic clock temperature adaptive control system as claimed in claim 6, characterized in that: The temperature monitoring function between each layer of the chip includes: Among them, ρ i is the material density of the i-th layer of the chip, C i is the specific heat capacity of the i-th layer of the chip, T i (x, y, t) is the current temperature at the position (x, y) of the i-th layer of the chip at time t, κ i is the thermal conductivity of the i-th layer of the chip, is the temperature gradient at the chip layer i position (x, y) at time t, β i is the influence factor of the power of the chip layer i on the temperature change, n is the normal vector, for the interface between the chip layer i and the chip layer j, the normal vector n is perpendicular to the interface and points to the chip layer j, T j (x, y, t) is the current temperature at the chip jth layer position (x, y) at time t, h i，j (T i (x, y, t)-T j (x, y, t)) is the heat transfer coefficient between the i-th chip layer and the j-th chip layer.

9. An industrial-grade chip atomic clock temperature adaptive control system as claimed in claim 6, characterized in that: The chip power adjustment model includes: Among them, P comp (t) is the power of the chip after compensation at time t, K p0 is the first initial coefficient of the PID controller, κ p is the adjustment factor of the first initial coefficient, T tanget is the target temperature, e nonlinear (t) is the difference index between the current temperature and the target temperature, Kio is the second initial coefficient of the PID controller, κ′ i is the adjustment factor of the second initial coefficient, K d0 is the third initial coefficient of the PID controller, κ d is the adjustment factor of the third initial coefficient, and T(x, y, t) is the current temperature at the chip position (x, y) at time t.

10. An industrial-grade chip atomic clock temperature adaptive control system as claimed in claim 9, characterized in that: The difference index e between the current temperature and the target temperature nonlinear (t) include: e nonlinear (t) =(T tanget -T(x,y,t))+α′·(T tanget -T(x,y,t)) 2 +β·(T tanget -T(x,y,t))·T(x,y,t) Among them, α′ is the first adjustment factor of the difference index, and β′ is the second adjustment factor of the difference index.

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