Storage device and electronic device

Abstract

The invention discloses a storage device and an electronic device. In embodiments of the disclosed technology, a heat generation control equation used in changing power modes of heat generation control of components included in an electronic device (e.g., a storage device) is used by differently setting for each power mode. Accordingly, it is possible to perform heat generation control that accurately reflects the relationship between the temperature change of the component in each power mode and the temperature value obtained by the temperature sensor. Accordingly, performance degradation due to unnecessary heat generation control may be prevented by effective heat generation control, and operating performance of the memory device may be improved.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0075595, filed on Jun. 13, 2023, which is hereby incorporated by reference in its entirety. Technical Field

[0003] Various embodiments of the disclosed technology generally relate to a storage device and an electronic device. Background Art

[0004] The storage device may include at least one memory storing data. The storage device may include a controller controlling an operation of writing data into the memory or erasing data in the memory or reading data from the memory.

[0005] Furthermore, the storage device may include at least one electronic component in addition to the memory and the controller.

[0006] Since the storage device includes various components, heat may be generated when the storage device is operated, and such heat may cause performance of the storage device to deteriorate due to the influence on the components in the storage device. Summary of the invention

[0007] Various embodiments of the present disclosure are directed to providing measures capable of effectively controlling heat generation when operating electronic components (eg, a memory or a controller) included in a storage device.

[0008] In an embodiment, a storage device may include: at least one memory; at least one external memory temperature sensor positioned adjacent to the at least one memory; and a controller that calculates a first estimate value using a first temperature value obtained from the at least one external memory temperature sensor and a default thermal control equation when the at least one memory is driven in a first power mode, changes the first power mode to a second power mode when the first estimate value is equal to or greater than a first threshold, and performs thermal control using a first changed thermal control equation that is different from the default thermal control equation when the at least one memory is driven in the second power mode.

[0009] In an embodiment, a storage device may include: at least one memory; at least one external memory temperature sensor positioned adjacent to the at least one memory; and a controller configured to control a power mode in which the at least one memory is driven based on a temperature value obtained from the at least one external memory temperature sensor and a preset threshold, wherein a difference between a first temperature value obtained from the at least one external memory temperature sensor and a preset first threshold when a first power mode is changed to a second power mode is different from a difference between a second temperature value obtained from the at least one external memory temperature sensor and a preset second threshold when a second power mode is changed to a third power mode.

[0010] In an embodiment, an electronic device may include: a plurality of electronic components disposed on a substrate; a plurality of external temperature sensors respectively located outside the plurality of electronic components and respectively adjacent to the plurality of electronic components; and a controller configured to control a power mode in which at least a portion of the plurality of electronic components are driven using temperature values ​​obtained from the plurality of external temperature sensors and a preset heat generation control equation, wherein the heat generation control equation is set differently for each power mode.

[0011] According to an embodiment of the disclosed technology, the heat generation of components included in a storage device during operation may be effectively controlled to prevent the performance degradation of the storage device and to improve the operation performance of the storage device. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 A storage device according to an embodiment of the disclosed technology is shown.

[0013] Figure 2 and Figure 3 A scheme for performing heat generation control in a storage device according to an embodiment of the disclosed technology is shown.

[0014] Figure 4 Shown when based on Figure 2 and Figure 3 The scheme shown shows the change in performance of the storage device when heat generation control is performed.

[0015] Figure 5 and Figure 6 A scheme of performing heat generation control in a storage device according to another embodiment of the disclosed technology is shown.

[0016] Figure 7 A scheme of performing heat generation control in a storage device according to another embodiment of the disclosed technology is shown.

[0017] Figure 8 A storage device according to another embodiment of the disclosed technology is shown.

[0018] Fig. 9A storage device according to another embodiment of the disclosed technology is shown.

[0019] Fig.10 A method for a storage device to perform heat generation control according to an embodiment of the disclosed technology is shown. DETAILED DESCRIPTION

[0020] In the following description of examples or embodiments of the present disclosure, reference will be made to the accompanying drawings, in which specific examples or embodiments that can be implemented are shown in an illustrative manner, and the same reference numerals and symbols may be used in the accompanying drawings to designate the same or similar components, even if they are shown in different drawings from each other. In addition, in the following description of examples or embodiments of the present disclosure, when it is determined that the description of the well-known functions and components incorporated herein may make the subject matter in some embodiments of the present disclosure unclear, the detailed description thereof will be omitted. Terms such as "including", "having", "comprising", "consisting of", "consisting of", and "formed of" used herein are generally intended to allow the addition of other components unless these terms are used with the term "only". Unless the context clearly indicates otherwise, as used herein, the singular form is also intended to include the plural form.

[0021] Terms such as "first", "second", "A", "B", "(A)" or "(B)" may be used herein to describe elements of the present disclosure. Each of these terms is not used to define the nature, order, sequence or quantity of an element, but is only used to distinguish the corresponding element from other elements.

[0022] When it is mentioned that a first element is “connected or coupled”, “contacted or overlapped”, etc. with a second element, it should be interpreted to include not only the case where the first element can be “directly connected or coupled” or “directly contacted or overlapped” with the second element, but also the case where a third element can be “inserted” between the first and second elements, or the first and second elements can be “connected or coupled” or “contacted or overlapped” with each other via a fourth element, etc. Here, the second element can be included in at least one of the two or more elements that are “connected or coupled”, “contacted or overlapped”, etc. with each other.

[0023] When time-related terms such as “after,” “subsequently,” “next,” “before,” etc. are used to describe a process or operation of an element or configuration, or a flow or step in an operation, process, or method of manufacture, these terms may be used to describe non-sequential or non-sequential processes or operations unless the terms “directly” or “immediately” are used together.

[0024] In addition, when referring to any dimension, relative size, etc., even if no relevant description is specified, it should be considered that the numerical value or corresponding information (e.g., level, range, etc.) of the element or feature includes a tolerance or error range that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.). In addition, the term "may" fully encompasses all meanings of the term "can".

[0025] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0026] Figure 1 A storage device 100 according to an embodiment of the disclosed technology is shown.

[0027] Reference Figure 1 The memory device 100 may include at least one memory and a controller 110 controlling the operation of the at least one memory. The memory device 100 may further include a power management integrated circuit (PMIC) 130 that supplies power to the memory and the controller 110.

[0028] The storage device 100 may further include at least one temperature sensor. Depending on the specific situation, in addition to the above components, the storage device 100 may further include at least one electronic component.

[0029] The above-mentioned memory, controller 110, and temperature sensor may be mounted on a substrate such as a printed circuit board. The storage device 100 may further include a housing accommodating the above-mentioned components mounted on the substrate.

[0030] The storage device 100 may include a first memory 121. The first memory 121 may be a non-volatile memory. The storage device 100 may include one or more first memories 121.

[0031] For example, the first memory 121 may be implemented as any one of various types such as NAND flash memory, 3D NAND flash memory, NOR flash memory, resistive random access memory, phase change random access memory, magnetoresistive random access memory, ferroelectric random access memory, and spin transfer torque random access memory. The first memory 121 may be implemented to have a three-dimensional array structure. The embodiments of the disclosed technology may be applied to a flash memory in which a charge storage layer is configured by a floating gate and a charge capture flash memory (CTF) in which a charge storage layer is configured by an insulating film.

[0032] The first memory 121 may include a plurality of memory blocks, and may operate under the control of the controller 110. The operation of the first memory 121 may include a program operation (also referred to as a "write operation"), an erase operation, and a read operation.

[0033] The first memory 121 may include a memory cell array including a plurality of memory cells storing data. The memory cell array may exist in a memory block.

[0034] The controller 110 may control a program operation, an erase operation, a read operation, and a background operation of the first memory 121. The background operation may include at least one of garbage collection, wear leveling, read reclamation, and bad block management.

[0035] The controller 110 may control the operation of the first memory 121 according to a request from a device (eg, a host) located outside the storage device 100. In addition, the controller 110 may control the operation of the first memory 121 regardless of the request of the host.

[0036] For example, the host may be a computer, an ultra mobile PC (UMPC), a workstation, a personal digital assistant (PDA), a tablet computer, a wireless phone, a mobile phone, a smart phone, an e-book, a portable multimedia player (PMP), a portable game console, a navigation device, a black box, a digital camera, a digital multimedia broadcasting (DMB) player, a smart TV, a digital audio recorder, a digital audio player, a digital picture recorder, a digital picture player, a digital video recorder, a digital video player, a storage device configured with a data center, one of various electronic devices configured with a home network, one of various electronic devices configured with a telematics network, an RFID (radio frequency identification) device, a mobile device capable of driving under human control or autonomous driving (e.g., a vehicle, a robot, or a drone), etc. Optionally, the host may be a virtual / augmented reality device that provides a 2D or 3D virtual reality image or an augmented reality image. In addition, the host may be any of various electronic devices that require a storage device 100 capable of storing data.

[0037] The host may include at least one operating system. The operating system may generally manage and control functions and operations of the host, and may provide interoperability between the host and the storage device 100. The operating system may be classified into a general operating system and a mobile operating system according to the mobility of the host.

[0038] The controller 110 and the host may be separate devices. Depending on the specific situation, the controller 110 and the host may be integrated into one device. Hereinafter, for the sake of convenience, the controller 110 and the host are separate devices as an example for description.

[0039] The controller 110 may include a host interface providing an interface for communicating with a host. The controller 110 may include a memory interface providing an interface for communicating with the first memory 121 .

[0040] For example, the controller 110 may include at least one of a processor, a working memory, etc., and may optionally include an error detection and correction circuit.

[0041] The processor may control the overall operation of the controller 110 and may perform logical operations. The processor may communicate with the host through the host interface and may communicate with the first memory 121 through the memory interface.

[0042] The processor may perform the function of a flash translation layer (FTL). The processor may use the flash translation layer to convert a logical block address provided by the host into a physical block address. The flash translation layer may receive a logical block address and convert the logical block address into a physical block address using a mapping table.

[0043] The processor may run firmware to control the operation of the controller 110. In order to control the overall operation of the controller 110 and perform logical operations, the processor may run (or drive) firmware loaded into the working memory at startup. The operation of the storage device 100 described in the embodiments of the disclosed technology may be implemented by the processor running firmware that defines the corresponding operation.

[0044] The firmware, which is a program to be executed in the storage device 100 to drive the storage device 100, may include various functional layers. For example, the firmware may include binary data in which codes for respectively executing the functional layers are defined.

[0045] For example, the firmware may include at least one of a flash translation layer (FTL), a host interface layer (HIL), and a flash interface layer (FIL), wherein the flash translation layer (FTL) performs a conversion function between a logical address requested by the host to the storage device 100 and a physical address of the first memory 121, the host interface layer (HIL) is used to interpret a command requested from the host to the storage device 100 and transmit the command to the flash translation layer (FTL), and the flash interface layer (FIL) transmits the command indicated by the flash translation layer (FTL) to the first memory 121.

[0046] For example, the firmware may be loaded into the working memory from the first memory 121 or a separate nonvolatile memory (e.g., ROM or NOR flash memory) located outside the first memory 121. The processor may first load all or part of the firmware into the working memory when running a startup operation after power-on.

[0047] The processor may execute the logic operation defined in the firmware loaded into the working memory to control the overall operation of the controller 110. The processor may store the result of executing the logic operation defined in the firmware in the working memory. The processor may control the controller 110 to generate a command or signal according to the result of executing the logic operation defined in the firmware. When a portion of the firmware defining the logic operation to be executed is not loaded into the working memory, the processor may generate an event (e.g., an interrupt) for loading the corresponding portion of the firmware into the working memory.

[0048] The working memory may store firmware, program code, commands and data required to drive the controller 110. Such working memory, such as a volatile memory, may include at least one of SRAM (static RAM), DRAM (dynamic RAM) and SDRAM (synchronous DRAM).

[0049] The working memory may be located inside or outside the controller 110. The working memory may be located inside and outside the controller 110 as the case may be.

[0050] The storage device 100 may further include a second memory 122 located outside the controller 110. The second memory 122 may be a volatile memory and may perform the function of the above-mentioned working memory. The storage device 100 may include one or more second memories 122.

[0051] When the memory such as the first memory 121 and / or the second memory 122 included in the memory device 100 is driven, performance degradation may be caused due to heat generated according to the driving of the memory. Embodiments of the disclosed technology can provide measures that enable the controller 110 to control heat generation, thereby preventing or reducing performance degradation of the memory device 100.

[0052] The memory device 100 may include at least one temperature sensor positioned adjacent to the memory.

[0053] The memory device 100 may include a first temperature sensor (TS1) 141 positioned adjacent to the first memory 121. The memory device 100 may further include a second temperature sensor (TS2) 142 positioned adjacent to the second memory 122.

[0054] In this specification, the first temperature sensor 141 and the second temperature sensor 142 may be referred to as “external memory temperature sensors”.

[0055] The first temperature sensor 141 may not be directly connected to the first memory 121. The second temperature sensor 142 may not be directly connected to the second memory 122. As the case may be, each of the first temperature sensor 141 and the second temperature sensor 142 may be connected to each of the first memory 121 and the second memory 122 through metal wiring or the like.

[0056] The first temperature sensor 141 and the second temperature sensor 142 may be electrically connected to the controller 110 .

[0057] The temperature values ​​measured by the first temperature sensor 141 and the second temperature sensor 142 may be provided to the controller 110. The controller 110 may control the heat generation of the storage device 100 based on the temperature values ​​provided by the first temperature sensor 141 and the second temperature sensor 142.

[0058] For example, the controller 110 may compare a temperature value received from at least one of the first temperature sensor 141 or the second temperature sensor 142 with a threshold value, and may change a power mode of the storage device 100 or the memory based on the comparison result.

[0059] When the power mode of the memory device 100 or the memory is changed, the power consumption set for driving the memory device 100 or the memory may be changed. The power consumption set for driving the memory device 100 or the memory may be referred to as "set power consumption".

[0060] For example, when the power mode is changed, the set power consumption may be reduced from 10 W to 5 W, and thus the magnitude of current flowing through the memory or the controller 110 included in the memory device 100 may be reduced.

[0061] When the magnitude of the current flowing through the memory or controller 110 is reduced, the temperature of the memory or controller 110 included in the memory device 100 may be reduced, or the rate at which the temperature increases may be gradually reduced over time.

[0062] Since the controller 110 controls the power mode based on the temperature value obtained from the temperature sensor, performance degradation due to heating of components included in the memory device 100 may be prevented or reduced, and performance of the memory device 100 may be improved.

[0063] In addition, in an embodiment of the disclosed technology, by controlling heat generation in consideration of the fact that the temperature change characteristics of components included in the storage device 100 change with changes in power mode, measures for enhancing the performance of the heat generation control function of the storage device 100 can be provided.

[0064] Figure 2 and Figure 3 The embodiment according to the disclosed technology is shown Figure 1 The storage device 100 implements a heating control scheme. Figure 4 Shows that when Figure 2 and Figure 3 The illustrated scheme shows changes in the performance of the storage device 100 when heat generation control is performed.

[0065] Reference Figure 2 and Figure 3 , the memory device 100 may operate according to a power mode set as a default power mode at startup. For example, the memory device 100 may operate according to a first power mode PM1 set as a default power mode.

[0066] The fact that the memory device 100 operates according to the first power mode PM1 may mean that at least one component included in the memory device 100 operates in the first power mode PM1.

[0067] For example, the first memory 121 included in the memory device 100 may operate according to the first power mode PM1. In addition, the second memory 122 included in the memory device 100 may operate according to the first power mode PM1. As the case may be, circuit components such as the controller 110 and the power management integrated circuit 130 included in the memory device 100 may operate according to the first power mode PM1.

[0068] The temperature sensor included in the memory device 100 may provide the controller 110 with a temperature value obtained when the memory device 100 is driven according to the first power mode PM1 .

[0069] For example, the first temperature sensor 141 may provide a temperature value obtained when the memory device 100 is driven in the first power mode PM1 to the controller 110. The controller 110 may read the temperature value from the first temperature sensor 141 periodically or at a preset time point.

[0070] In addition, the second temperature sensor 142 may provide a temperature value obtained when the memory device 100 is driven in the first power mode PM1 to the controller 110. The controller 110 may read the temperature value from the second temperature sensor 142 periodically or at a preset time point.

[0071] The controller 110 may control a power mode of the memory device 100 using at least one of the temperature values ​​provided from the first temperature sensor 141 and the second temperature sensor 142 .

[0072] The controller 110 may perform heating control based on the temperature value provided from the first temperature sensor 141, or may perform heating control based on the temperature value provided from the second temperature sensor 142. Depending on the circumstances, the controller 110 may perform heating control using the temperature values ​​provided from the first temperature sensor 141 and the second temperature sensor 142 in combination, or may perform heating control based on a temperature value of the two temperature values ​​that has a greater risk due to heating.

[0073] For ease of explanation, Figure 2 Heating control based on the temperature value provided from the first temperature sensor 141 is shown, but embodiments of the disclosed technology may be applied to heating control performed using a temperature value provided from at least one of the first temperature sensor 141 or the second temperature sensor 142 as described above.

[0074] When the memory device 100 is driven according to the first power mode PM1 , the controller 110 may read a temperature value from the first temperature sensor 141 .

[0075] The controller 110 may calculate the estimated value using the temperature value read from the first temperature sensor 141 and a preset heat generation control equation.

[0076] For example, the controller 110 may calculate the first estimated value Tcom1 using the first temperature value Tread1 read from the first temperature sensor 141 and a preset default heating control equation.

[0077] The default heat generation control equation may be an equation for calculating an estimated value Tcom (eg, Tcom1 ) by adding 3 to a temperature value X (eg, Tread1 ) obtained from the first temperature sensor 141 .

[0078] When the first temperature value Tread1 read from the first temperature sensor 141 in the first power mode PM1 is 76 (unit: ° C.), the first estimated value Tcom1 may be 79. When the first temperature value Tread1 is 78, the first estimated value Tcom1 may be 81. In a corresponding case, the actual temperature value Tmem of the first memory 121 may be 79 and 81. The difference between the first temperature value Tread1 and the actual temperature value Tmem of the first memory 121 may be 3.

[0079] The controller 110 may compare the first estimated value Tcom1 calculated using the first temperature value Tread1 with a first threshold value. The first threshold value may be a value set for the first power mode PM1. Figure 2 In the example shown, the first threshold may be 81 as an example.

[0080] For example, when the first estimated value Tcom1 is equal to or greater than the first threshold value, the controller 110 may change the power mode of the storage device 100 from the first power mode PM1 to the second power mode PM2. The second power mode PM2 may be a mode whose set power consumption is lower than that of the first power mode PM1. For example, when the set power consumption of the first power mode PM1 is 10W, the set power consumption of the second power mode PM2 may be 5W.

[0081] When the first temperature value Tread1 read from the first temperature sensor 141 is 76, the controller 110 may maintain the first power mode PM1 because the first estimated value Tcom1 is 79 and is less than the first threshold value 81. On the other hand, when the first temperature value Tread1 read from the first temperature sensor 141 is 78, the controller 110 may change the first power mode PM1 to the second power mode PM2 because the first estimated value Tcom1 is 81 and is equal to the first threshold value 81.

[0082] When the memory device 100 is driven according to the second power mode PM2 , the controller 110 may read a temperature value from the first temperature sensor 141 .

[0083] In the second power mode PM2, the controller 110 may calculate an estimation value using the temperature value read from the first temperature sensor 141 and a preset heat generation control equation.

[0084] The heat generation control equation used by the controller 110 in the second power mode PM2 may be different from the heat generation control equation used in the first power mode PM1 .

[0085] For example, in the second power mode PM2 , the controller 110 may calculate the second estimated value Tcom2 using the second temperature value Tread2 read from the first temperature sensor 141 and a preset first changed heating control equation.

[0086] The first changed heating control equation may be an equation for calculating an estimated value Tcom (eg, Tcom2 ) by adding 5 to the temperature value Y (eg, Tread2 ) obtained from the first temperature sensor 141 .

[0087] When the second temperature value Tread2 read from the first temperature sensor 141 in the second power mode PM2 is 74, 76, 78, and 80, the second estimated value Tcom2 may be 79, 81, 83, and 85, respectively. In the corresponding case, the actual temperature value Tmem of the first memory 121 may be 79, 81, 83, and 85. The difference between the second temperature value Tread2 and the actual temperature value Tmem of the first memory 121 may be 5.

[0088] In the second power mode PM2, the controller 110 may compare the second estimated value Tcom2 calculated using the second temperature value Tread2 with a second threshold value. The second threshold value may be a value set for the second power mode PM2. Figure 2 In the example shown, the second threshold may be 85, as an example.

[0089] When the second estimated value Tcom2 is less than the second threshold, the controller 110 may maintain the second power mode PM2. When the second estimated value Tcom2 is equal to or greater than the second threshold, the controller 110 may change the second power mode PM2 to the third power mode PM3.

[0090] Since the first changed heating control equation is different from the default heating control equation, when the second power mode PM2 is changed to the third power mode PM3, the difference (or gap) between the second temperature value Tread2 and the second threshold value may be different from the difference (or gap) between the first temperature value Tread1 and the first threshold value when the first power mode PM1 is changed to the second power mode PM2.

[0091] In the above example, the difference between the first temperature value Tread1 and the first threshold when the first power mode PM1 changes to the second power mode PM2, for example 3, may be smaller than the difference between the second temperature value Tread2 and the second threshold when the second power mode PM2 changes to the third power mode PM3, for example 5.

[0092] Since whether to change the power mode is controlled by using different heating control equations in various power modes, the relationship between the temperature value and the threshold value used as a reference and the heating state of the storage device 100 may be different when the first power mode PM1 is changed to the second power mode PM2 than when the second power mode PM2 is changed to the third power mode PM3.

[0093] The third power mode PM3 may be a mode in which the set power consumption is lower than that of the second power mode PM2. For example, when the set power consumption of the second power mode PM2 is 5W, the set power consumption of the third power mode PM3 may be 1W.

[0094] When the second estimated value Tcom2 is less than the first threshold, the controller 110 may change the second power mode PM2 to the first power mode PM1 .

[0095] Alternatively, the controller 110 may calculate a separate estimation value using the second temperature value Tread2 and a default heating control equation. The controller 110 may determine whether to change the second power mode PM2 to the first power mode PM1 based on a comparison result of the separate estimation value and the first threshold.

[0096] When the memory device 100 is driven according to the third power mode PM3, the controller 110 may calculate an estimated value using the temperature value Tread3 read from the first temperature sensor 141 and a preset heating control equation. The controller 110 may control the power mode using the estimated value and the preset threshold value.

[0097] The heat generation control equation used by the controller 110 in the third power mode PM3 may be different from the heat generation control equation used in the first power mode PM1 and the second power mode PM2 .

[0098] For example, in the third power mode PM3, the controller 110 may calculate the estimated value using a second changed heating control equation different from the default heating control equation and the first changed heating control equation.

[0099] The second changed heating control equation may be an equation for calculating an estimated value Tcom (eg, Tcom3 ) by adding 7 to the temperature value Z (eg, Tread3 ) obtained from the first temperature sensor 141 .

[0100] When the third temperature value Tread3 obtained from the first temperature sensor 141 in the third power mode PM3 is 72, 74, 76, 78, 80, and 82, the third estimated value Tcom3 may be 79, 81, 83, 85, 87, and 89, respectively. In the corresponding case, the actual temperature value Tmem of the first memory 121 may be 79, 81, 83, 85, 87, and 89. The difference (or gap) between the third temperature value Tread3 and the actual temperature value Tmem of the first memory 121 may be 7.

[0101] In this way, since a heating control equation differently set according to each power mode is used to determine whether to change the power mode according to a change in temperature, unnecessary heating control in each power mode is prevented or reduced, and the operating performance of the storage device 100 can be improved.

[0102] For example, if the heating control equation used in the first power mode PM1 is the same as the heating control equation used in the second power mode PM2, when the first temperature value Tread1 obtained in the first power mode PM1 is 76, the first estimated value Tcom1 may be 81 obtained by adding 76 to 5. In this case, since the first estimated value Tcom1 is equal to the first threshold value 81, the controller 110 may change the first power mode PM1 to the second power mode PM2. Therefore, although the actual temperature value Tmem of the first memory 121 is 79 and is less than the first threshold value 81, the first power mode PM1 is changed to the second power mode PM2, and thus the operating performance of the memory device 100 may be degraded.

[0103] On the other hand, according to an embodiment of the disclosed technology, since the heating control equation used in the first power mode PM1 is set to be different from the heating control equation used in the second power mode PM2, when the first temperature value Tread1 is 78, the first estimated value Tcom1 may be 81. At the time point when the first temperature value Tread1 is 78, the first power mode PM1 may be changed to the second power mode PM2. Therefore, although the actual temperature value Tmem of the first memory 121 is changed from 79 to 81, the memory device 100 may still be driven according to the first power mode PM1.

[0104] For example, when the same thermal control equation is applied to the different power modes mentioned above, the time point of entering throttling due to thermal heating will be faster, such as Figure 4 of<EX 1> When throttling is entered, the power mode may be changed, and various controls may be performed to reduce the operating performance of the storage device 100 to reduce heat generation.

[0105] On the other hand, when different heat generation control equations are applied to the above different power modes, the time point of entering throttling due to heat generation can be delayed, such as Figure 4 of<EX 2> shown.

[0106] Since the heating control equation is set based on the actual temperature change and temperature value of the first memory 121 as the heating control target, damage or failure of the first memory 121 can be prevented. In addition, the operating performance of the first memory 121 can be improved as the time point of entering throttling is delayed.

[0107] Unnecessary performance degradation due to a change in a power mode for controlling heat generation of the memory device 100 may be prevented or reduced. Heat generation control reflecting a characteristic that a degree of temperature change differs according to a change in a power mode of the memory device 100 may be performed.

[0108] The foregoing example can also be applied to a scheme of controlling the heating of the second memory 122 based on the temperature value obtained using the second temperature sensor 142. In addition, the foregoing example can also be applied to a scheme of controlling the heating of the first memory 121 and the second memory 122 based on the temperature values ​​obtained using the first temperature sensor 141 and the second temperature sensor 142.

[0109] Furthermore, in the embodiment of the disclosed technology, heating control of the storage device 100 may be performed by changing a heating target to be compared with a temperature value obtained by a single temperature sensor according to a power mode.

[0110] Figure 5 and Figure 6 Another embodiment according to the disclosed technology is shown. Figure 1 The storage device 100 implements a heating control scheme.

[0111] Reference Figure 5 and Figure 6 , the storage device 100 may perform heating control using the temperature value obtained by the first temperature sensor 141. The controller 110 included in the storage device 100 may perform heating control using a heating control equation differently set according to each power mode.

[0112] The heat generation control equation differently set according to each power mode may be set based on a temperature value of a heat generation target differently set in each power mode.

[0113] For example, the heating control equations used in the first power mode PM1 and the second power mode PM2 may be set based on the temperature value and temperature change of the housing included in the storage device 100. The heating control equations may be set so that the power mode is changed based on the temperature value and temperature change of the housing.

[0114] Reference Figure 5 In the illustrated example, the default heat generation control equation used in the first power mode PM1 may be an equation for calculating the estimated value Tcom by subtracting 25 from the temperature value X obtained by the first temperature sensor 141 .

[0115] When the first temperature values ​​Tread1 obtained by the first temperature sensor 141 are 66, 69, and 73, the first estimated values ​​Tcom1 corresponding thereto may be 41, 44, and 48, respectively. In each case, the actual temperature value Tcase of the housing may be 41, 44, and 48. The difference (or gap) between the first temperature value Tread1 and the actual temperature value Tcase of the housing may be 25.

[0116] The controller 110 may compare the first estimated value Tcom1 with a preset first threshold value. The first threshold value may be 48. When the first estimated value Tcom1 is equal to or greater than the first threshold value, the controller 110 may change the first power mode PM1 to the second power mode PM2.

[0117] In the second power mode PM2 , the controller 110 may perform heating control using a first changed heating control equation different from a default heating control equation used in the first power mode PM1 .

[0118] The first changed heating control equation may be an equation for calculating an estimated value Tcom (eg, Tcom2 ) by subtracting 18 from a temperature value Y (eg, Tread2 ) obtained by the first temperature sensor 141 .

[0119] When the second temperature value Tread2 obtained by the first temperature sensor 141 is 66 and 69, the second estimated value Tcom2 corresponding thereto may be 48 and 51, respectively. In each case, the actual temperature value Tcase of the housing may be 48 and 51. The difference (or gap) between the second temperature value Tread2 and the actual temperature value Tcase of the housing may be 18.

[0120] When the second estimated value Tcom2 is equal to or greater than the second threshold, the controller 110 may change the second power mode PM2 to the third power mode PM3. The second threshold may be 51. When the second estimated value Tcom2 is equal to or greater than the second threshold of 51, the controller 110 may change the second power mode PM2 to the third power mode PM3.

[0121] Since the change of the power mode is controlled using the heating control equations that are differently set in the first power mode PM1 and the second power mode PM2, the time point when the first power mode PM1 is changed to the second power mode PM2 can be delayed within the range of preventing the storage device 100 from being damaged or malfunctioning due to heating in the first power mode PM1. While effectively controlling the heating of the storage device 100, the operating performance of the storage device 100 can be improved.

[0122] When the power mode is changed from the second power mode PM2 to the third power mode PM3 , the controller 110 may perform heating control using a heating control equation different from the heating control equations used in the first power mode PM1 and the second power mode PM2 .

[0123] For example, in the third power mode PM3, the controller 110 may perform heating control using a second changed heating control equation different from the default heating control equation and the first changed heating control equation.

[0124] The second changed heating control equation may be an equation for calculating the estimated value Tcom by adding 3 to the temperature value Z (e.g., Tread3) obtained by the first temperature sensor 141 in the third power mode PM3. The second changed heating control equation may be an equation set based on the relationship between the temperature value Tread3 obtained by the first temperature sensor 141 and the actual temperature value Tmem of the first memory 121.

[0125] When the third temperature value Tread3 obtained by the first temperature sensor 141 is 71 and 73, the third estimated value Tcom3 corresponding thereto may be 74 and 76, respectively. In each case, the actual temperature value Tmem of the first memory 121 may be 74 and 76. The difference (or gap) between the third temperature value Tread3 and the actual temperature value Tmem of the first memory 121 may be 3.

[0126] When the power mode is changed from the first power mode PM1 or the second power mode PM2, the temperature value obtained by the first temperature sensor 141 may be greater than the threshold value. For example, when the first power mode PM1 is changed to the second power mode PM2 or the second power mode PM2 is changed to the third power mode PM3, the first temperature value is greater than the threshold value. When the power mode (or heating control mode) is changed from the third power mode PM3, the temperature value obtained by the first temperature sensor 141 may be less than the threshold value. For example, when the third power mode PM3 is changed to other power modes, the first temperature value is less than the threshold value.

[0127] When the risk of damage or failure of the storage device 100 due to heat is not high, such as in the first power mode PM1 or the second power mode PM2, heat control can be performed using a heat control equation simply set based on the temperature of the shell separated from the first temperature sensor 141 by at least a predetermined distance.

[0128] However, in a power mode representing a state with a higher degree of heating (eg, the third power mode PM3 ), heating control may be performed using a heating control equation set based on temperature variation of the first memory 121 positioned adjacent to the first temperature sensor 141 .

[0129] Alternatively, in the first power mode PM1, a heating control equation set based on the temperature value and temperature change of the housing may be used, and in each of the second power mode PM2 and the third power mode PM3, a heating control equation set based on the temperature value and temperature change of the first memory 121 may be used. In this case, when the power mode is changed from the second power mode PM2, the temperature value obtained by the first temperature sensor 141 may be less than the threshold value set in the second power mode PM2, and when the power mode is changed from the first power mode PM1, the temperature value obtained by the first temperature sensor 141 may be greater than the threshold value set in the first power mode PM1. The distance between the target used as a reference for deriving the heating control equation used in the first power mode PM1 and the first temperature sensor 141 may be greater than the distance between the target used as a reference for deriving the heating control equation used in the second power mode PM2 and the first temperature sensor 141. Therefore, the absolute value of the difference between the temperature value obtained by the first temperature sensor 141 when the power mode is changed from the first power mode PM1 and the threshold value may be greater than the absolute value of the difference between the temperature value obtained by the first temperature sensor 141 when the power mode is changed from the second power mode PM2 and the threshold value.

[0130] In this way, heating control is performed using the temperature value obtained by the same temperature sensor, and a heating control equation set differently for each power mode can be used. In the heating control equation set differently for each power mode, a target used as a reference for setting the corresponding equation can be different for each power mode. Therefore, heating control can be performed by a heating control equation with improved accuracy according to the heating risk.

[0131] In an embodiment of the disclosed technology, heat generation control may be performed by heat generation control equations that are differently set according to a driving mode of the storage device 100 even in the same power mode.

[0132] Figure 7 Another embodiment according to the disclosed technology is shown. Figure 1 The storage device 100 implements a heating control scheme.

[0133] Reference Figure 7 , the memory device 100 can be driven in at least two driving modes when operating in the first power mode PM1. For example, when the memory device 100 operates in the first power mode PM1, the memory device 100 can be driven in any one of the first driving mode, the second driving mode, and the third driving mode.

[0134] The operating performance of the storage device 100 can vary according to the drive mode. The first drive mode can be a high-performance mode in which the storage device 100 operates with high performance. The second drive mode can be a normal drive mode. The third drive mode can be a low-performance mode, such as an idle mode, in which the storage device 100 operates with low performance. In the normal drive mode, the storage device 100 operates with a performance between high performance and low performance. For example, the power consumption set for the first drive mode, the second drive mode, and the third drive mode can be 10W, 8W, and 6W, respectively.

[0135] In the case of the first driving mode, the storage device 100 operates at high performance and thus operates at high speed in a short time. Therefore, even when a component (e.g., the first memory 121) included in the storage device 100 operates at a high temperature, since the component is exposed to the high temperature for a short time, the risk of heating can be small.

[0136] On the other hand, since components included in the memory device 100 (eg, the first memory 121 ) may operate in the second driving mode or the third driving mode for a relatively long time, the memory device 100 may need to be managed to operate at a lower temperature.

[0137] Therefore, when the memory device 100 operates in the first power mode PM1, the controller 110 may perform heat generation control using heat generation control equations that are differently set according to driving modes.

[0138] For example, the controller 110 may perform heating control according to a first default heating control equation in the first driving mode. The first default heating control equation may be an equation for calculating the estimated value Tcom by subtracting 3 from the temperature value X obtained by the first temperature sensor 141 .

[0139] The controller 110 may perform heating control according to a second default heating control equation in the second driving mode. The second default heating control equation may be an equation that determines the temperature value X obtained by the first temperature sensor 141 as the estimated value Tcom.

[0140] The controller 110 may perform heating control according to a third default heating control equation in the third driving mode. The third default heating control equation may be an equation for calculating the estimated value Tcom by adding 3 to the temperature value X obtained by the first temperature sensor 141 .

[0141] Even if the same temperature value X is obtained by the first temperature sensor 141 in the first power mode PM1 , the estimation value calculated from the same temperature value X may vary according to the driving mode.

[0142] For example, when the first temperature value Tread1 obtained by the first temperature sensor 141 is 83, 86, and 89, the first estimated value Tcom1 corresponding to them calculated according to the first default heating control equation in the first driving mode may be 80, 83, and 86, respectively. Therefore, when the threshold for changing the power mode or entering throttling is 83, even if the first temperature value Tread1 is 83, the power mode may not be changed because the first estimated value Tcom1 is 80 and is less than the threshold 83. That is to say, even in the state where the actual temperature value Tmem of the first memory 121 is 83, the power mode may not be changed or throttling may not be entered.

[0143] On the other hand, when the first temperature value Tread1 is 86, the first estimated value Tcom1 is 83, so the power mode may be changed or throttling may be entered. When throttling is entered, the actual temperature value Tmem of the first memory 121 may be 86.

[0144] When the threshold used as a reference for the host to perform a cooling operation is 86, the cooling operation may be performed when the first temperature value Tread1 is 89 because the first estimated value Tcom1 is 86, which is equal to the threshold 86. When the cooling operation is performed, the actual temperature value Tmem of the first memory 121 may be 89.

[0145] In the first driving mode as the high performance mode, since throttling is entered when the actual temperature value Tmem of the first memory 121 is 86 and a cooling operation is performed when the actual temperature value Tmem of the first memory 121 is 89, the period during which the storage device 100 operates with high performance can be extended.

[0146] In this way, the storage device 100 can operate in the high performance mode for a longer time. Since the operating characteristics of the high performance mode make the risk caused by heat lower, the driving performance of the storage device 100 can be improved while preventing damage or performance degradation of the storage device 100.

[0147] In the second driving mode as the normal driving mode, when the first temperature values ​​Tread1 read from the first temperature sensor 141 are 80, 83, and 86, the first estimated values ​​Tcom1 corresponding thereto may be 80, 83, and 86, respectively.

[0148] Since throttling can be entered when the first estimated value Tcom1 is 83, throttling can be entered in a state where the first temperature value Tread1 is 83 and the actual temperature value Tmem of the first memory 121 is 83. And, when the first estimated value Tcom1 is 83, the first power mode PM1 can be changed to the second power mode PM2. Therefore, various controls for reducing the heat generation of the storage device 100 can be performed. When the first estimated value Tcom1 is 86, a cooling operation can be performed. Throttling can be entered when the actual temperature value Tmem of the first memory 121 is 83, and a cooling operation can be performed when the actual temperature value Tmem of the first memory 121 is 86. Therefore, in the second driving mode, even if the temperature of the first memory 121 is lower than the temperature of the first memory 121 in the first driving mode, heat generation control such as throttling or cooling can be performed.

[0149] In the third driving mode as the low performance mode, when the first temperature values ​​Tread1 read from the first temperature sensor 141 are 77, 80, and 83, the first estimation values ​​Tcom1 corresponding thereto may be 80, 83, and 86, respectively.

[0150] When the first estimated value Tcom1 is 83, the first temperature value Tread1 is 80 and the actual temperature value Tmem of the first memory 121 is 80. Since the first estimated value Tcom1 is equal to the threshold value 83 for entering throttling, throttling can be entered. In a state where the first estimated value Tcom1 is 86, the first temperature value Tread1 is 83, and the actual temperature value Tmem of the first memory 121 is 83, since the first estimated value Tcom1 is equal to the threshold value 86 for performing a cooling operation, an additional operation such as a cooling operation for reducing heat generation can be performed. Throttling can be entered when the actual temperature value Tmem of the first memory 121 is 80, and a cooling operation can be performed when the actual temperature value Tmem of the first memory 121 is 83. Therefore, in the third driving mode, even when the temperature of the first memory 121 is lower than the temperature of the first memory 121 in the first driving mode and the second driving mode, heat generation control such as throttling or cooling can be performed.

[0151] In this way, since the estimated value is calculated using the heating control equation set differently for each driving mode and the heating control is performed, the heating control of the storage device 100 can be performed without changing the threshold used as a reference for the heating control. Since the threshold for controlling other operations except the heating control can be fixed, the heating control according to the driving mode can be easily performed without affecting the control of other operations.

[0152] In an embodiment of the disclosed technology, heat generated by a memory and heat generated by various circuit components other than the memory included in the memory device 100 may be controlled.

[0153] Figure 8 and Fig. 9 Each shows a storage device according to other embodiments of the disclosed technology. Figure 8 and Fig. 9 In the description, descriptions that are repeated with the above contents will be omitted.

[0154] Reference Figure 8 , the storage device 100 - 1 may include a first memory 121 , a second memory 122 , a controller 110 , and a power management integrated circuit 130 , all of which are disposed on a substrate.

[0155] The memory device 100-1 may include a first temperature sensor (TS1) 141 disposed on a substrate and positioned adjacent to the first memory 121. The memory device 100 may include a second temperature sensor (TS2) 142 disposed on a substrate and positioned adjacent to the second memory 122.

[0156] The memory device 100 may further include a third temperature sensor (TS3) 143 located in the controller 110. In this specification, the third temperature sensor 143 may be referred to as an "internal controller temperature sensor."

[0157] The controller 110 may perform heating control using the temperature value read from the first temperature sensor 141 or the second temperature sensor 142 and a preset heating control equation.

[0158] In addition, the controller 110 may perform heating control using the temperature value read from the third temperature sensor 143 and a preset heating control equation. The heating control equation for heating control based on the temperature value read from the third temperature sensor 143 may be set differently for each power mode.

[0159] When the power mode is changed, the difference between the temperature value read from the third temperature sensor 143 and the threshold value may be changed. When the power mode is changed, the magnitude relationship between the temperature value read from the third temperature sensor 143 and the threshold value may be changed.

[0160] Since the controller 110 performs heating control based on the temperature value obtained by the third temperature sensor 143 and uses a heating control equation set differently for each power mode, heating control can be performed while preventing or reducing degradation in the operational performance of the controller 110 .

[0161] Furthermore, heat generation control for other circuit components included in the storage device 100 other than the controller 110 may also be performed differently according to each power mode.

[0162] For example, refer to Fig. 9 In addition to the first temperature sensor 141 and the second temperature sensor 142 , the storage device 100 - 2 may further include a fourth temperature sensor ( TS4 ) 144 .

[0163] The fourth temperature sensor 144 may be located adjacent to the power management integrated circuit 130. In this specification, the fourth temperature sensor 144 may be referred to as an "external circuit temperature sensor."

[0164] The controller 110 may perform heat generation control on the power management integrated circuit 130 using the temperature value obtained from the fourth temperature sensor 144 and a preset heat generation control equation.

[0165] The heat generation control equation used by the controller 110 to perform heat generation control on the power management integrated circuit 130 may be set differently for each power mode.

[0166] Since the controller 110 controls the heat generation of the power management integrated circuit 130 using a heat generation control equation that is set differently for each power mode, the heat generation of the power management integrated circuit 130 can be controlled by changing the power mode or entering throttling according to the heat generation control while reducing or minimizing the performance degradation of the power management integrated circuit 130.

[0167] As described above, the temperature sensor may be implemented for heat generation control of the memory or may be implemented for heat generation control of the circuit component. The temperature sensor may be provided inside or outside each of the memory and the circuit component. A temperature sensor may be provided for at least a portion of the components included in the storage device 100.

[0168] In addition, the embodiments of the disclosed technology can be used to control the heating of various electronic components in an electronic device, in which the various electronic components are arranged on a substrate. In this case, the temperature sensor can be arranged inside or outside the various electronic components, and the control module can perform heating control using the temperature value obtained from the temperature sensor and the heating control equation set differently for each mode.

[0169] Fig.10 A method for performing heating control in a storage device according to an embodiment of the disclosed technology is shown. The storage device may be Figure 1 The memory device 100 is shown. However, the embodiments are not limited to the memory device 100.

[0170] Reference Fig.10 , when the memory device 100 is started (S1000), the controller 110 of the memory device 100 may set the power mode of the memory device 100 to the first power mode PM1 (S1010). The first power mode PM1 may be a default power mode, and it may be a mode in which the operating performance of the memory device 100 or the performance of a component such as a memory included in the memory device 100 does not deteriorate.

[0171] The controller 110 may set the heating control equation as a default heating control equation in the first power mode PM1 ( S1020 ).

[0172] When operating in the first power mode PM1 , the controller 110 may calculate a first estimation value Tcom1 using a temperature value read from a temperature sensor and a preset default heating control equation ( S1030 ).

[0173] When the first estimated value Tcom1 is less than the preset threshold Th1 (S1040), the controller 110 may maintain the power mode as the first power mode PM1 (S1050). Since the first power mode PM1 is maintained, the heating control equation may be set as a default heating control equation (S1060).

[0174] When the first estimation value Tcom1 is equal to or greater than the preset threshold value Th1 ( S1040 ), the controller 110 may change the power mode to the second power mode PM2 ( S1070 ).

[0175] The controller 110 may set the heating control equation to a first changed heating control equation in the second power mode PM2 (S1080). The first changed heating control equation may be different from the default heating control equation. When the storage device 100 operates in the second power mode PM2, the first changed heating control equation may be set to represent the relationship between the temperature change of the component as the heating control target and the temperature value obtained by the temperature sensor.

[0176] When operating in the second power mode PM2 , the controller 110 may calculate the second estimation value Tcom2 using the temperature value obtained by the temperature sensor and the first changed heating control equation.

[0177] The controller 110 may compare the second estimated value Tcom2 with a threshold Th2 set for the second power mode PM2 (S1100). According to the comparison result between the second estimated value Tcom2 and the threshold Th2, the controller 110 may maintain the second power mode PM2 or change the second power mode PM2 to another power mode.

[0178] As is apparent from the above description, in the embodiment of the disclosed technology, the heating control equation used as a reference for changing the power mode or heating control is set differently for each power mode. Therefore, heating control that accurately reflects the relationship between the temperature change of the component according to each power mode and the temperature value obtained by the temperature sensor can be performed.

[0179] By preventing damage or malfunction due to heating of the storage device, it is possible to prevent the performance of the storage device from being degraded due to changing the power mode or entering throttling unnecessarily according to the heating control operation. This results in improved operating performance of the storage device.

[0180] Although various embodiments of the disclosed technology have been described for illustrative purposes and with specific and varied details, those skilled in the art will appreciate that various modifications, additions and substitutions are possible based on what is disclosed or shown in the present disclosure, without departing from the spirit and scope of the disclosed technology as defined in the following claims.

Claims

1. A storage device, comprising: one or more memories; one or more temperature sensors, respectively positioned adjacent to the one or more reservoirs; as well as A controller that calculates a first estimated value using a first temperature value obtained from the one or more temperature sensors and a default heating control equation when the one or more memories operate in a first power mode, changes the first power mode to a second power mode when the first estimated value is equal to or greater than a first threshold, and performs heating control using a first changed heating control equation that is different from the default heating control equation when the one or more memories operate in the second power mode.

2. The storage device according to claim 1, wherein: The controller calculates a second estimated value using a second temperature value obtained from the one or more temperature sensors and the first changed heat generation control equation when the one or more memories operate in the second power mode, and changes the second power mode to a third power mode when the second estimated value is equal to or greater than a second threshold.

3. The storage device according to claim 2, wherein: When the one or more memories are operated in the third power mode, the controller performs heating control using a second changed heating control equation different from the default heating control equation and the first changed heating control equation.

4. The storage device according to claim 2, wherein: A difference between the first temperature value and the first threshold value when the first power mode is changed to the second power mode is different from a difference between the second temperature value and the second threshold value when the second power mode is changed to the third power mode.

5. The storage device according to claim 2, wherein: A difference between the first temperature value and the first threshold when the first power mode is changed to the second power mode is smaller than a difference between the second temperature value and the second threshold when the second power mode is changed to the third power mode.

6. The storage device according to claim 2, wherein: When the first power mode is changed to the second power mode, the first temperature value is greater than the first threshold, and when the second power mode is changed to the third power mode, the second temperature value is less than the second threshold.

7. The storage device according to claim 6, wherein: An absolute value of a difference between the first temperature value and the first threshold value is greater than an absolute value of a difference between the second temperature value and the second threshold value.

8. The storage device according to claim 1, wherein: The controller calculates a second estimated value using a second temperature value obtained from the one or more temperature sensors and the first changed heat generation control equation when the one or more memories operate in the second power mode, and changes the second power mode to the first power mode when the second estimated value is less than the first threshold.

9. The storage device according to claim 1, wherein: The one or more memories include a first memory as a non-volatile memory and a second memory as a volatile memory, The one or more temperature sensors include a first temperature sensor adjacent to the first memory and a second temperature sensor adjacent to the second memory, and A heat generation control equation applied to a temperature value obtained from the first temperature sensor and a heat generation control equation applied to a temperature value obtained from the second temperature sensor are set differently according to a power mode.

10. The storage device according to claim 1, further comprising: a power management integrated circuit to provide power to the one or more memories and the controller; as well as an external circuit temperature sensor, positioned adjacent to the power management integrated circuit, Wherein, a heat generation control equation applied to a temperature value obtained from the external circuit temperature sensor is set differently according to a power mode.

11. The storage device according to claim 1, further comprising: an internal controller temperature sensor, disposed within the controller, Wherein, a heat generation control equation applied to a temperature value obtained from the internal controller temperature sensor is set differently according to a power mode.

12. The storage device according to claim 1, wherein: In the first power mode, the one or more memories operate in a first drive mode or a second drive mode, and In the first driving mode, the first estimated value is calculated using a first default heating control equation, and in the second driving mode, the first estimated value is calculated using a second default heating control equation different from the first default heating control equation.

13. The storage device according to claim 12, wherein: The first estimated value calculated in the first driving mode is less than the first temperature value, and the first estimated value calculated in the second driving mode is equal to or greater than the first temperature value.

14. A storage device comprising: one or more memories; one or more temperature sensors, respectively positioned adjacent to the one or more reservoirs; as well as a controller that controls a power mode of the one or more memory operations based on a temperature value obtained from the one or more temperature sensors and a threshold value, Wherein, a difference between a first temperature value obtained from the one or more temperature sensors and a first threshold when the first power mode is changed to the second power mode is different from a difference between a second temperature value obtained from the one or more temperature sensors and a second threshold when the second power mode is changed to the third power mode.

15. The storage device according to claim 14, wherein: A difference between the first temperature value and the first threshold value is smaller than a difference between the second temperature value and the second threshold value.

16. The storage device according to claim 15, wherein: The power consumption set for the second power mode is less than the power consumption set for the first power mode.

17. The storage device according to claim 14, wherein: When the first power mode is changed to the second power mode, the first temperature value is greater than the first threshold, and when the second power mode is changed to the third power mode, the second temperature value is less than the second threshold.

18. An electronic device comprising: A plurality of electronic components are disposed on the substrate; a plurality of temperature sensors, respectively disposed adjacent to the plurality of electronic components; as well as A controller controls a power mode of at least a portion of operations of the plurality of electronic components using temperature values ​​obtained from the plurality of temperature sensors and a heat generation control equation, the heat generation control equation being differently set for each power mode.

19. The electronic device according to claim 18, wherein: The controller changes a first temperature value obtained in the first power mode by using a first heating control equation, and changes a second temperature value obtained in the second power mode by using a second heating control equation, and The degree to which the first temperature value is changed by the first heat generation control equation is different from the degree to which the second temperature value is changed by the second heat generation control equation.

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