Method for testing photoelectric and thermal characteristics of semiconductor device

Abstract

The invention relates to the technical field of material science, and particularly discloses a method for testing photoelectric and thermal characteristics of a semiconductor device, which comprises the following steps of: acquiring crystal impurity evaluation parameters of the semiconductor device to perform crystal impurity evaluation of the semiconductor device, and acquiring a crystal impurity interference correction value, the method comprises the steps of obtaining a thermal characteristic parameter set and a light characteristic parameter set of a semiconductor device, determining a test temperature array and a test light intensity array, determining a plurality of photo-thermal coupling test schemes based on the test temperature array and the test light intensity array, applying each photo-thermal coupling test scheme to the semiconductor device and obtaining an electrical characteristic tested data set, according to the method, the electrical characteristic tested value is calculated based on the electrical characteristic tested data set corresponding to each photo-thermal coupling test scheme, the optimal photo-thermal coupling test scheme is determined, the rationality and adaptability of formulating the photo-thermal coupling test scheme are improved, and it is ensured that the test result can reflect the characteristic performance of the semiconductor device in various environments.

Description

Technical Field

[0001] The invention relates to the technical field of material science, and in particular to a testing method for photoelectric and thermal characteristics of semiconductor devices. Background Art

[0002] Currently, semiconductor devices are the core of modern information technology, including computers, smart phones, tablets and other devices. The performance of semiconductor devices directly affects data processing speed, storage capacity and energy efficiency, especially in 5G and future 6G networks. High-frequency and high-speed signal transmission depends on high-performance semiconductor materials and devices. With the emergence of new semiconductor materials, studying the photoelectric and thermal properties of semiconductor devices will help develop more efficient devices and evaluate their performance under different environmental conditions. It can not only ensure their reliability and stability under extreme conditions, but also improve the energy efficiency and response speed of the device, promote technological progress, and promote the application of semiconductor devices in emerging fields.

[0003] Nowadays, there are still some deficiencies in the test methods for the photoelectric thermal characteristics of semiconductor devices, which are specifically reflected in the following aspects: the traditional test of the photoelectric thermal characteristics of semiconductor devices ignores the priority consideration of semiconductor doping. Different impurities will change the lattice structure, directly affecting the electrical conductivity and photothermal reaction characteristics of the semiconductor device. Ignoring the consideration of semiconductor impurity content will lead to misunderstanding of the test results of the photoelectric thermal characteristics of semiconductor devices, thereby affecting the accuracy and reliability of the evaluation of the conductive efficiency of semiconductor devices. In addition, ignoring the complex changes and combinations of light intensity and temperature in the actual working environment of semiconductor devices, not considering these complex environmental possibilities leads to insufficient adaptability of the characteristic test results of semiconductor devices in specific application scenarios, which in turn affects the reliability and accuracy of the photoelectric thermal characteristics test of semiconductor devices. Summary of the invention

[0004] In view of the deficiencies of the prior art, the present invention provides a method for testing the photoelectric thermal characteristics of a semiconductor device, which can effectively solve the problems involved in the above-mentioned background technology.

[0005] To achieve the above objectives, the present invention is implemented through the following technical solutions: a test method for the photoelectric thermal characteristics of a semiconductor device, comprising: obtaining crystal impurity evaluation parameters of the semiconductor device, performing crystal impurity evaluation of the semiconductor device based on the crystal impurity evaluation parameters, and obtaining a crystal impurity interference correction value; obtaining a thermal characteristic parameter set of the semiconductor device, determining a temperature test point based on the thermal characteristic parameter set of the semiconductor device, and determining a test temperature array based on the crystal impurity interference correction value and the temperature test point, wherein the test temperature array includes a number of corrected temperature test points; obtaining an optical characteristic parameter set of the semiconductor device, determining a light intensity test point based on the optical characteristic parameter set of the semiconductor device, and determining a test light intensity array based on the crystal impurity interference correction value and the light intensity test point, wherein the test light intensity array includes a number of corrected light intensity test points; determining a number of photothermal coupling test schemes based on the test temperature array and the test light intensity array, applying each photothermal coupling test scheme to the semiconductor device and obtaining an electrical characteristic test data set, calculating an electrical characteristic test value based on the electrical characteristic test data set corresponding to each photothermal coupling test scheme, and determining an optimal photothermal coupling test scheme.

[0006] As a further method, crystal impurity evaluation parameters of semiconductor devices are obtained, and the specific analysis process is: performing X-ray diffraction on the semiconductor device to obtain a target diffraction pattern; based on the type of semiconductor device, obtaining the test target phase and the test non-target phase stored in the database, marking the test target phase as the test main phase, and the test non-target phase as the test impurity phase; based on the test main phase and the test impurity phase, comprehensively analyzing the target diffraction pattern to obtain crystal impurity evaluation parameters, the crystal impurity evaluation parameters include the relative intensity of the impurity phase diffraction peak, the integral area ratio of the main phase, the grain dislocation density, and the average grain size deviation rate.

[0007] As a further method, a crystal impurity evaluation of a semiconductor device is performed based on a crystal impurity evaluation parameter to obtain a crystal impurity interference correction value, and the specific analysis process is: obtaining the crystal impurity evaluation parameter; calculating and obtaining the crystal impurity evaluation value based on the crystal impurity evaluation parameter; obtaining the crystal impurity calibration interval stored in the database, wherein the crystal impurity calibration interval includes a crystal impurity calibration upper limit and a crystal impurity calibration lower limit; comparing the crystal impurity evaluation value with the crystal impurity calibration interval stored in the database to obtain a comparison result; if the crystal impurity evaluation value is between the crystal impurity calibration upper limit and the crystal impurity calibration lower limit, marking the crystal impurity interference correction value as 0; if the crystal impurity evaluation value is greater than the crystal impurity calibration upper limit, comprehensively analyzing the crystal impurity evaluation value and the crystal impurity calibration upper limit to obtain the crystal impurity interference correction value; if the crystal impurity evaluation value is less than the crystal impurity calibration lower limit, comprehensively analyzing the crystal impurity evaluation value and the crystal impurity calibration lower limit to obtain the crystal impurity interference correction value.

[0008] As a further method, the crystal impurity interference correction value is calculated by the following formula:

[0009]

[0010] In the formula, Z x is the crystal impurity interference correction value, Z p is the crystal impurity evaluation value, B a is the upper limit of crystal impurities calibration, B b It is the lower limit of crystal impurities, and e is a natural constant.

[0011] As a further method, a temperature test point is determined based on a thermal characteristic parameter set of a semiconductor device, and a test temperature array is determined based on a crystal impurity interference correction value and the temperature test point, wherein the test temperature array includes a number of corrected temperature test points. The specific analysis process is as follows: obtaining a thermal characteristic parameter set of a semiconductor device, wherein the thermal characteristic parameter set includes thermal conductivity, specific heat capacity, carrier concentration, and energy band gap width; calculating a thermally sensitive characteristic value based on the thermal characteristic parameter set; matching a temperature test point in a database based on the thermally sensitive characteristic value; obtaining a crystal impurity interference correction value; obtaining a crystal impurity interference correction grading standard stored in the database; comparing the crystal impurity interference correction grading standard and the crystal impurity interference correction value stored in the database to determine a crystal impurity interference correction level corresponding to the crystal impurity interference correction value; matching a test temperature interval stored in the database based on the crystal impurity interference correction level; determining a number of corrected temperature test points based on the temperature test point and the test temperature interval, and marking the number of corrected temperature test points as a test temperature array.

[0012] As a further method, the thermal sensitivity characteristic value is calculated as follows:

[0013]

[0014] Where r is the thermal sensitivity characteristic value, d is the thermal conductivity, b is the specific heat capacity, n is the carrier concentration, k is the energy band gap width, and e is the natural constant.

[0015] As a further method, a light intensity test point is determined based on an optical characteristic parameter set of a semiconductor device, and a test light intensity array is determined based on a crystal impurity interference correction value and the light intensity test point, wherein the test light intensity array includes a number of corrected light intensity test points. The specific analysis process is as follows: obtaining an optical characteristic parameter set of a semiconductor device, wherein the optical characteristic parameter set includes a carrier recombination time, a light absorption coefficient, and a carrier concentration; calculating a light sensitivity characteristic value based on the optical characteristic parameter set; matching light intensity test points in a database based on the light sensitivity characteristic value; obtaining a crystal impurity interference correction level; matching the test light intensity spacing stored in the database based on the crystal impurity interference correction level; determining a number of corrected light intensity test points based on the light intensity test point and the test light intensity spacing, and marking the number of corrected light intensity test points as a test light intensity array.

[0016] As a further method, several photothermal coupling test schemes are determined based on a test temperature array and a test light intensity array, and the specific analysis process is: obtaining each corrected temperature test point in the test temperature array; obtaining each corrected light intensity test point in the test light intensity array; performing Cartesian product combination on the corrected temperature test points and the corrected light intensity test points to obtain a photothermal coupling test scheme and mark it, wherein the photothermal coupling test scheme is a combination of a corrected temperature test point and a corrected light intensity test point.

[0017] As a further method, each photothermal coupling test scheme is applied to a semiconductor device and an electrical characteristic test data set is obtained. The electrical characteristic test value is calculated based on the electrical characteristic test data set corresponding to each photothermal coupling test scheme, and the best photothermal coupling test scheme is determined. The specific analysis process is: obtaining an electrical characteristic test data set applied to a semiconductor device by any photothermal coupling test scheme, wherein the electrical characteristic test data set includes a switching voltage, a saturation current, an electrical conductivity, and an electron mobility; comprehensively analyzing the electrical characteristic test data set to obtain a photothermal coupling test scheme applicability judgment result, wherein the photothermal coupling test scheme applicability judgment result includes an inapplicable photothermal coupling test scheme and an applicable photothermal coupling test scheme. Scheme; obtaining the electrical characteristic test fusion factor set set in the database, the electrical characteristic test fusion factor set including the switching voltage fusion factor, the saturation current fusion factor, the conductivity fusion factor, and the electron mobility fusion factor; calculating the electrical characteristic test values ​​of the semiconductor in the applicable photothermal coupling test scheme based on the electrical characteristic test fusion factor set set in the database and the electrical characteristic test data set; comprehensively statistically sorting the electrical characteristic test values ​​obtained after each applicable photothermal coupling test scheme is applied to the semiconductor device, and determining the best photothermal coupling test scheme, the best photothermal coupling test scheme being the photothermal coupling test scheme corresponding to the highest electrical characteristic test value in the applicable photothermal coupling test schemes.

[0018] As a further method, the applicability judgment result of the photothermal coupling test scheme includes an unqualified photothermal coupling test scheme and a qualified photothermal coupling test scheme, and the specific analysis process is: obtain a test data set of electrical characteristics of a semiconductor device applied to any photothermal coupling test scheme; obtain the saturation current standard value and the basic conductivity value stored in the database; judge whether the saturation current is less than the saturation current standard value: if so, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is not applicable, and the inapplicable photothermal coupling test scheme means that the semi-conductivity cannot meet the basic applicability standard under the current photothermal coupling test scheme; if not, judge whether the conductivity is greater than or equal to the basic conductivity: if so, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is applicable, and the applicable photothermal coupling test scheme means that the semi-conductivity can meet the basic applicability standard under the current photothermal coupling test scheme; if not, judge whether the conductivity is greater than or equal to the basic conductivity: if so, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is applicable, and the applicable photothermal coupling test scheme means that the semi-conductivity can meet the basic applicability standard under the current photothermal coupling test scheme; if not, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is not applicable.

[0019] Compared with the prior art, the embodiments of the present invention have at least the following advantages or beneficial effects:

[0020] (1) Before the present invention performs a test on the photoelectric thermal characteristics of a semiconductor device, the target diffraction pattern is first obtained by performing X-ray diffraction on the semiconductor device, and the semiconductor impurity content is obtained by analyzing the target diffraction pattern. This is because the semiconductor impurity content will affect the carrier concentration of the semiconductor material and thus affect the sensitivity of the semiconductor device to temperature changes and light intensity changes. In subsequent tests, the test results of the photoelectric thermal characteristics of the semiconductor device are affected by quantifying crystal impurities and comparing and analyzing the crystal impurity calibration intervals stored in the database, determining the interference degree of impurities and performing accurate temperature correction and light intensity correction, which helps to improve the rationality and adaptability of the formulation of the photothermal coupling test plan.

[0021] (2) The photothermal coupling test solution is obtained by combining the corrected temperature test points and the corrected light intensity test points through the Cartesian product. This not only comprehensively covers the working environment conditions within the normal working dimension of the semiconductor device, but also ensures that the test results can reflect the performance of the semiconductor device in various environments, thereby improving the reliability of the test. It can also better evaluate the performance of the semiconductor device in actual applications, help determine the optimal working conditions, and effectively utilize the conductive efficiency of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present invention is further described using the accompanying drawings, but the embodiments in the accompanying drawings do not constitute any limitation to the present invention. A person skilled in the art can obtain other drawings based on the following drawings without creative work.

[0023] Figure 1 It is a schematic diagram of the method flow of the present invention.

[0024] Figure 2 A step diagram for determining several optical-thermal coupling test solutions based on a test temperature array and a test light intensity array. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0026] Reference Figure 1 As shown, the present invention provides a testing method for photoelectric thermal characteristics of semiconductor devices, including: obtaining crystal impurity evaluation parameters of the semiconductor device, performing crystal impurity evaluation of the semiconductor device based on the crystal impurity evaluation parameters, and obtaining a crystal impurity interference correction value.

[0027] Specifically, the crystal impurity evaluation parameters of the semiconductor device are obtained, and the specific analysis process is as follows: X-ray diffraction is performed on the semiconductor device to obtain a target diffraction pattern; based on the type of semiconductor device, the test target phase and the test non-target phase stored in the database are obtained, and the test target phase is marked as the test main phase, and the test non-target phase is marked as the test impurity phase, wherein the test target phase refers to the phase that dominates the semiconductor device, which is usually the material expected during design, and its crystal structure and composition meet the expected semiconductor standards. Taking typical semiconductor materials as an example, its test target phases include: silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), etc., and the test non-target phase refers to the component that exists in the semiconductor device but is not expected during design, which is usually an impurity or defect phase. The presence of the impurity phase will have an adverse effect on the semiconductor performance, and its non-test target phases include: silicon dioxide (SiO2), aluminum (Al) or iron (Fe), phosphorus (P), arsenic (As), etc.

[0028] Based on the comprehensive analysis of the target diffraction pattern of the tested main phase and the tested impurity phase, the crystal impurity evaluation parameters are obtained. The crystal impurity evaluation parameters include the relative intensity of the impurity phase diffraction peak, the integral area ratio of the main phase, the grain dislocation density, and the average grain size deviation rate. Among them, the relative intensity of the impurity phase diffraction peak is equal to the ratio of the impurity phase intensity to the sum of the main phase intensity and the impurity phase intensity. Among them, the main phase intensity is the sum of the diffraction peak intensities of all main phases (target phases), and the impurity phase intensity is the sum of the diffraction peak intensities of all impurity phases (non-target phases). The integral area ratio of the main phase refers to the integral area ratio of the diffraction peak of the main phase in the entire diffraction spectrum. The dislocation density is the number of dislocations per unit volume of the semiconductor, usually expressed in dislocations / cm 2Indicates that crystal size usually refers to the diameter or size of the grains, and the average grain size deviation rate refers to the ratio of the standard deviation of the grain size obtained by the diffraction peak width (usually the grain size calculated by the Scherrer formula) to its average value. It reflects the uniformity of the grain size, and a smaller deviation rate indicates that the grain size is more uniform.

[0029] In a specific embodiment, the specific calculation formula of the crystal impurity evaluation parameter is:

[0030]

[0031] In the formula, Z p is the crystal impurity evaluation parameter, y is the relative intensity of the impurity phase diffraction peak, m is the integral area ratio of the main phase, c is the grain dislocation density, and p is the average grain size deviation rate.

[0032] It needs to be explained that Z p Used to quantitatively evaluate the content of impurities in semiconductor crystals, Z p The larger the value, the higher the impurity content of the semiconductor. y directly reflects the presence of impurities. More impurity phases will be formed in the polycrystalline, resulting in an increase in the diffraction peak intensity (relative to the main phase). Therefore, when the relative intensity of the impurity phase diffraction peak increases, Z p The decrease of m usually indicates the increase of impurities. With the introduction of impurities, the relative intensity of the main phase will decrease, which makes m decrease, so it is reflected in Z. p The generation of dislocations is often related to the insertion of impurities. A higher c usually means that the lattice structure of the material is disturbed, which may lead to an increase in impurities. When c increases, Z p will also increase, indicating that impurities are more likely to occupy the original crystal position in the system. p reflects the unevenness of grain size. A higher p may imply that the introduction of impurities affects the uniformity of grain growth, thus Z p Increase.

[0033] It needs to be explained that when y increases, m will decrease accordingly. This is because as the impurity content increases, the diffraction signal of the impurity phase becomes stronger, while the diffraction peak of the main phase is relatively weakened. The two are inversely proportional, reflecting the relative proportions of different phases in the semiconductor. The increase in c is usually related to the introduction of impurities. The presence of impurities can lead to lattice defects and increase c. When the impurity phase in the crystal increases, c will usually increase as well, because stress concentration and interaction make dislocations easier to form. Therefore, the enhancement of y may have a certain positive correlation with the increase in dislocation density. The decrease in m indicates an increase in impurities and impurity phases, which is usually accompanied by an increase in c. Impurity atoms may cause defects in the lattice, thereby increasing c. Conversely, a higher m usually means less c. A higher c usually increases p, because the stress distribution between adjacent grains is uneven, which affects grain growth. Therefore, there may be a positive correlation between c and p. A higher p may lead to a decrease in m, because uneven grain size may weaken the diffraction signal of some grains, which may also affect the overall strength of the main phase and ultimately affect m.

[0034] Specifically, a crystal impurity evaluation of a semiconductor device is performed based on a crystal impurity evaluation parameter to obtain a crystal impurity interference correction value, and the specific analysis process is: obtain the crystal impurity evaluation parameter; calculate and obtain the crystal impurity evaluation value based on the crystal impurity evaluation parameter; obtain the crystal impurity calibration interval stored in the database, wherein the crystal impurity calibration interval includes a crystal impurity calibration upper limit and a crystal impurity calibration lower limit; compare the crystal impurity evaluation value with the crystal impurity calibration interval stored in the database to obtain a comparison result; if the crystal impurity evaluation value is between the crystal impurity calibration upper limit and the crystal impurity calibration lower limit, mark the crystal impurity interference correction value as 0; if the crystal impurity evaluation value is greater than the crystal impurity calibration upper limit, comprehensively analyze the crystal impurity evaluation value and the crystal impurity calibration upper limit to obtain the crystal impurity interference correction value; if the crystal impurity evaluation value is less than the crystal impurity calibration lower limit, comprehensively analyze the crystal impurity evaluation value and the crystal impurity calibration lower limit to obtain the crystal impurity interference correction value.

[0035] It needs to be explained that before conducting the photoelectric thermal characteristics test of the semiconductor device, the target diffraction pattern is first obtained by performing X-ray diffraction on the semiconductor device, and the target diffraction pattern is analyzed to obtain the semiconductor impurity content, because the semiconductor impurity content will affect the carrier concentration of the semiconductor material and thus affect the sensitivity of the semiconductor device to temperature changes and light intensity changes, and then the test results of the photoelectric thermal characteristics of the semiconductor device in subsequent tests are affected by quantifying the crystal impurities and comparing and analyzing the crystal impurity calibration intervals stored in the database, determining the interference degree of the impurities and making accurate temperature corrections and light intensity corrections, which helps to improve the rationality and adaptability of the formulation of the photothermal coupling test plan.

[0036] Specifically, the crystal impurity interference correction value is calculated by the following formula:

[0037]

[0038] In the formula, Z x is the crystal impurity interference correction value, Z p is the crystal impurity evaluation value, B a is the upper limit of crystal impurities calibration, B b It is the lower limit of crystal impurities, and e is a natural constant.

[0039] In a specific embodiment, Z x Based on Z p The deviation between the crystal impurity calibration and the crystal impurity interference is quantitatively corrected to correct the deviation of the semiconductor device's sensitivity to temperature changes and light intensity changes caused by the influence of semiconductor crystal impurities.

[0040] A thermal characteristic parameter set of a semiconductor device is obtained, a temperature test point is determined based on the thermal characteristic parameter set of the semiconductor device, and a test temperature array is determined based on a crystal impurity interference correction value and the temperature test point, wherein the test temperature array includes a plurality of corrected temperature test points.

[0041] Specifically, a temperature test point is determined based on a thermal characteristic parameter set of a semiconductor device, and a test temperature array is determined based on a crystal impurity interference correction value and the temperature test point. The test temperature array includes a number of corrected temperature test points. The specific analysis process is as follows: a thermal characteristic parameter set of a semiconductor device is obtained. The thermal characteristic parameter set includes thermal conductivity, specific heat capacity, carrier concentration, and energy band gap width. Thermal conductivity refers to a measure of the thermal conductivity of a semiconductor, which is usually expressed in units of watts per meter per Kelvin (W / m·K). It describes the ability of a semiconductor to transfer heat under a unit temperature gradient. Specific heat capacity refers to the amount of heat absorbed by a unit mass of a semiconductor when a unit temperature is increased. The unit is usually joule per kilogram per Kelvin (J / kg·K), which reflects the thermal response ability of the semiconductor when the temperature changes. Carrier concentration refers to the number of free electrons or holes in a unit volume, which is usually expressed in the number of carriers per cubic centimeter. The energy band gap width refers to the energy difference between the conduction band and the valence band of a semiconductor material, which is usually expressed in electron volts (eV). It determines the excitation and conductivity of electrons in a material at different temperatures.

[0042] Calculate thermal sensitive characteristic values ​​based on a thermal characteristic parameter set; match temperature test points in a database based on the thermal sensitive characteristic values; obtain a crystal impurity interference correction value; obtain a crystal impurity interference correction grading standard stored in the database; compare the crystal impurity interference correction grading standard and the crystal impurity interference correction value stored in the database to determine a crystal impurity interference correction level corresponding to the crystal impurity interference correction value; match the test temperature interval stored in the database based on the crystal impurity interference correction level; determine a number of corrected temperature test points based on the temperature test points and the test temperature intervals, and mark the several corrected temperature test points as a test temperature array.

[0043] In a specific embodiment, suppose that the crystal impurity interference correction value you obtain from the experiment is 15, and your grading standard is: Level 1: crystal impurity interference correction value ≤10, Level 2: 10<crystal impurity interference correction value ≤20, Level 3: 20<crystal impurity interference correction value ≤30, Level 4: crystal impurity interference correction value>30. By comparison, if the crystal impurity interference correction value is equal to 15 and falls within the range of Level 2, it can be concluded that the crystal impurity interference correction level corresponding to the crystal impurity interference correction value is Level 2. The level of the crystal impurity interference correction value is systematically determined, thereby providing an accurate basis for subsequent research and analysis. The crystal impurity interference correction level is stored as a designated label, and the designated label is compared with the test temperature intervals corresponding to each designated label stored in the database to obtain the test temperature interval corresponding to the designated label.

[0044] It needs to be explained that based on the temperature test point Ttest, the corrected temperature test point is obtained by adding and subtracting the test temperature interval ΔT based on Ttest. Specifically, the previous corrected temperature point: T1 = Ttest + n × ΔT (n is a positive integer), the next corrected temperature point: T2 = Ttest-m × ΔT (m is a non-negative integer), using the corrected temperature test point calculated above, a temperature test array will be obtained, recorded as Tarray, Tarray = [Tm, T-m+1, ..., T0, ..., Tn] where T0 represents the original temperature test point Ttest, and Tm and Tn are the upper and lower corrected temperature points generated according to the interval.

[0045] Specifically, the thermal sensitivity characteristic value is calculated by the following formula:

[0046]

[0047] Where r is the thermal sensitivity characteristic value, d is the thermal conductivity, b is the specific heat capacity, n is the carrier concentration, k is the energy band gap width, and e is the natural constant.

[0048] It should be explained that the r is used to describe the sensitivity of semiconductor devices to changes in the working environment temperature under normal working conditions. The higher the sensitivity, the greater the impact of temperature on the semiconductor conductivity. A higher d means that the semiconductor can effectively dissipate heat and reduce the impact of temperature changes on device performance. On the contrary, a lower d may lead to heat accumulation, thereby increasing the thermal sensitivity of the device, which may lead to overheating and failure. A material with a higher b can absorb more heat when the temperature changes, thereby slowing down the impact of temperature changes on the device, which makes the device more stable when working and reduces thermal sensitivity. A lower b may lead to rapid temperature changes and increase thermal sensitivity. The impact of carrier concentration is that a higher n usually increases the conductivity of the semiconductor, but may also lead to higher Joule heat generation and increase thermal sensitivity. Changes in n will affect the response speed and stability of the device when the temperature changes. Changes in k will affect the generation and recombination of carriers, thereby affecting the r of the semiconductor. A smaller k may lead to the generation of more carriers at a lower temperature, thereby increasing r. On the contrary, a larger band gap width may make the semiconductor more stable at high temperatures and reduce r.

[0049] Obtain an optical characteristic parameter set of a semiconductor device, determine a light intensity test point based on the optical characteristic parameter set of the semiconductor device, and determine a test light intensity array based on a crystal impurity interference correction value and the light intensity test point, wherein the test light intensity array includes a plurality of corrected light intensity test points.

[0050] Specifically, a light intensity test point is determined based on a light characteristic parameter set of a semiconductor device, and a test light intensity array is determined based on a crystal impurity interference correction value and the light intensity test point, wherein the test light intensity array includes a number of corrected light intensity test points. The specific analysis process is as follows: obtaining a light characteristic parameter set of a semiconductor device, wherein the light characteristic parameter set includes a carrier recombination time, a light absorption coefficient, and a carrier concentration, wherein the carrier recombination time refers to the average time required for photogenerated carriers (electrons and holes) to be generated and recombine in a semiconductor. A longer recombination time means that carriers can move a longer distance in the semiconductor before recombination, thereby improving the photoelectric conversion efficiency. The light absorption coefficient is a parameter that describes the semiconductor's ability to absorb light of a specific wavelength, and is defined as the attenuation of light intensity per unit length, in units of cm -1 , carrier concentration refers to the number of free electrons or holes per unit volume, usually expressed as the number of carriers per cubic centimeter.

[0051] Calculate light sensitivity characteristic values ​​based on the light characteristic parameter set; match light intensity test points in a database based on the light sensitivity characteristic values; obtain a crystal impurity interference correction level; match the test light intensity spacing stored in the database based on the crystal impurity interference correction level; determine a number of corrected light intensity test points based on the light intensity test points and the test light intensity spacing, and mark the several corrected light intensity test points as a test light intensity array.

[0052] It needs to be explained that the calculation formula of the light sensitivity characteristic value is as follows:

[0053]

[0054] Where g is the photosensitivity characteristic value, f is the carrier recombination time, x is the light absorption coefficient, n is the carrier concentration, and e is a natural constant.

[0055] In a specific embodiment, g is used to describe the sensitivity of a semiconductor device to changes in the light intensity of the working environment under normal operating conditions. The higher the sensitivity, the greater the impact of light intensity. A longer f means that carriers have more time to exist in the material before being utilized, thereby improving photosensitivity. Changes in light intensity can be more effectively converted into electrical signals because more carriers can participate in the photoelectric effect, and g is improved. On the contrary, if f is shorter, carriers may recombine before the light intensity changes, resulting in reduced photosensitivity. A higher x means that the material can effectively absorb incident light, thereby improving photosensitivity. When the light intensity changes, the semiconductor can respond quickly and generate a corresponding photoelectric signal. If x is lower, the semiconductor's response to light will be weakened, thereby reducing photosensitivity. A higher n can enhance the photoelectric effect because more carriers can be used to respond to changes in light intensity, and g is higher.

[0056] In a specific embodiment, when x is higher, the material can absorb more light and generate more carriers, which may lead to an extension of the carrier recombination time f. Conversely, a lower x will result in a decrease in the number of photogenerated carriers, which may shorten f. A longer f allows more carriers to exist under light, so when the light intensity changes, more carriers can be effectively utilized. A higher x will cause more photons to be absorbed, thereby increasing the number of photogenerated carriers n. If the material has a low x, even if the light intensity is very high, the number of carriers generated will be limited, which will affect the photosensitivity.

[0057] It needs to be explained that, based on the light intensity test point Itest, starting from the light intensity test point Itest, the corrected light intensity test point is obtained by adding and subtracting the test light intensity spacing ΔI, specifically, the previous corrected light intensity test point: I1 = Itest + n × ΔI (n is a positive integer), the next corrected light intensity test point: I2 = Itest - m × ΔI (m is a non-negative integer), and the above calculation can be used to obtain several corrected light intensity test points. These points can be stored in an array or list, recorded as Iarray: Iarray = [Im, I-m+1, ..., I0, ..., In], where I0 represents the original light intensity test point Itest, and Im and In are the upper and lower corrected light intensity points generated according to the spacing.

[0058] Based on the test temperature array and the test light intensity array, several photothermal coupling test schemes are determined, each photothermal coupling test scheme is applied to the semiconductor device and an electrical characteristic test data set is obtained, the electrical characteristic test values ​​are calculated based on the electrical characteristic test data sets corresponding to each photothermal coupling test scheme, and the best photothermal coupling test scheme is determined.

[0059] Specifically, each photothermal coupling test scheme is applied to the semiconductor device and an electrical characteristic test data set is obtained. The electrical characteristic test value is calculated based on the electrical characteristic test data set corresponding to each photothermal coupling test scheme, and the best photothermal coupling test scheme is determined. The specific analysis process is: obtain the electrical characteristic test data set of any photothermal coupling test scheme applied to the semiconductor device, and the electrical characteristic test data set includes switching voltage, saturation current, conductivity, and electron mobility, wherein the switching voltage is the minimum voltage required for the semiconductor device to change from a non-conducting state to a conducting state, the saturation current refers to the maximum current value that the device can reach under specific conditions, the conductivity is a direct measure of the material's electrical conductivity, reflecting the number and mobility of free carriers in the material, and the electron mobility refers to the mobility of electrons under the action of an electric field, usually expressed in speed per volt per meter.

[0060] Comprehensively analyze the electrical characteristics test data set to obtain the applicability judgment result of the photothermal coupling test scheme, the photothermal coupling test scheme applicability judgment result includes an inapplicable photothermal coupling test scheme and an applicable photothermal coupling test scheme; obtain the electrical characteristics test fusion factor set set in the database, the electrical characteristics test fusion factor set includes a switching voltage fusion factor, a saturation current fusion factor, a conductivity fusion factor, and an electron mobility fusion factor; calculate the electrical characteristics test values ​​of the semiconductor in the applicable photothermal coupling test scheme based on the electrical characteristics test fusion factor set set in the database and the electrical characteristics test data set; comprehensively statistically rank the electrical characteristics test values ​​obtained after each applicable photothermal coupling test scheme is applied to the semiconductor device, and determine the best photothermal coupling test scheme, the best photothermal coupling test scheme being the photothermal coupling test scheme corresponding to the highest electrical characteristics test value in the applicable photothermal coupling test schemes.

[0061] It needs to be explained that the calculation formula for the test value of electrical characteristics is as follows:

[0062]

[0063] Where D is the test value of the electrical characteristic, K is the switching voltage, B is the saturation current, L is the conductivity, Q is the electron mobility, μ K is the switch voltage fusion factor, μ B is the saturation current fusion factor, μ L is the conductivity fusion factor, μ Q is the electron mobility fusion factor.

[0064] It should be explained that the set switching voltage fusion factor μ K , saturation current fusion factor μ B , conductivity fusion factor μ L , electron mobility fusion factor μ Q The switching voltage, saturation current, conductivity, electron mobility and μ are extracted from the database and established based on the historical data. K , μ B , μ L , μ Q The mapping set of current switching voltage, saturation current, conductivity, and electron mobility corresponding to μ K , μ B , μ L , μ Q , D is used to describe the conductivity efficiency of semiconductor devices after the application of any photothermal coupling test scheme. A lower K means that the device can effectively conduct electricity at a lower voltage, thereby reducing power consumption and improving energy efficiency. A higher K may cause energy loss and heat generation, reducing D. A higher B indicates that the semiconductor can effectively conduct more current under the action of light or voltage, thereby improving the conductivity efficiency. A higher L means that the material can conduct current more effectively, thereby improving the conductivity efficiency. D is larger. A higher Q means that electrons can respond to electric fields faster, thereby improving the conduction efficiency of current in semiconductors and improving D.

[0065] In a specific embodiment, a lower K generally indicates that the device can be turned on quickly, thereby achieving a higher B at a lower voltage. B is closely related to the L of the semiconductor. Increasing L means a higher carrier concentration or better carrier mobility, which generally leads to a higher B under the same conditions. This is because more carriers and better mobility make it easier for current to pass, thereby improving Q.

[0066] Specifically, a comprehensive analysis of the electrical characteristics test data set is performed to obtain a result of the applicability judgment of the photothermal coupling test scheme, and the applicability judgment result of the photothermal coupling test scheme includes an unqualified photothermal coupling test scheme and a qualified photothermal coupling test scheme. The specific analysis process is: obtain an electrical characteristics test data set of any photothermal coupling test scheme applied to a semiconductor device; obtain the saturation current compliance value and the basic conductivity value stored in the database; judge whether the saturation current is less than the saturation current compliance value: if so, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is not applicable, and the photothermal coupling test scheme is not applicable, which means that the semi-conductivity cannot meet the basic applicability standard under the current photothermal coupling test scheme; if not, judge whether the conductivity is greater than or equal to the basic conductivity: if so, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is applicable, and the applicable photothermal coupling test scheme means that the semi-conductivity can meet the basic applicability standard under the current photothermal coupling test scheme; if not, judge whether the conductivity is greater than or equal to the basic conductivity: if so, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is applicable, and the applicable photothermal coupling test scheme means that the semi-conductivity can meet the basic applicability standard under the current photothermal coupling test scheme; if not, the applicability judgment result of the photothermal coupling test scheme is that the photothermal coupling test scheme is not applicable.

[0067] In a specific embodiment, since the inapplicable photothermal coupling test scheme means that the semiconductor cannot meet the basic applicability standards under the current photothermal coupling test scheme, even if other indicators are excellent and the tested values ​​of the electrical characteristics generally meet the standards, if the current saturation current or conductivity is difficult to meet the basic conductivity requirements of the semiconductor under the current photothermal coupling test scheme, it will be eliminated from consideration. This method of pre-judgment of the photothermal coupling test scheme can quickly screen out inapplicable photothermal coupling test schemes, avoid wasting time and resources on inapplicable schemes or causing erroneous evaluations that are inconsistent with the actual working logic in the evaluation of semiconductor photoelectric thermal characteristics, thereby improving the overall test efficiency and making the evaluation of semiconductor photoelectric thermal characteristics more objective and reliable.

[0068] In a specific embodiment, a photothermal coupling test scheme is obtained by combining the corrected temperature test points and the corrected light intensity test points through the Cartesian product, which can not only comprehensively cover the working environment conditions within the normal working dimension of the semiconductor device, but also ensure that the test results can reflect the performance of the semiconductor device in various environments, thereby improving the reliability of the test, and can better evaluate the performance of the semiconductor device in actual applications, which helps to determine the optimal working conditions and effectively utilize the conductive efficiency of the semiconductor device.

[0069] The above contents are merely examples and explanations of the structure of the present invention. The technicians in this technical field may make various modifications or additions to the specific embodiments described or replace them in a similar manner. As long as they do not deviate from the structure of the invention or exceed the scope defined by the claims, they should all fall within the protection scope of the present invention.

Claims

1. A method for testing the photoelectric and thermal characteristics of a semiconductor device, characterized in that: include: Acquire crystal impurity evaluation parameters of the semiconductor device, perform crystal impurity evaluation of the semiconductor device based on the crystal impurity evaluation parameters, and acquire a crystal impurity interference correction value; Acquire a thermal characteristic parameter set of the semiconductor device, determine a temperature test point based on the thermal characteristic parameter set of the semiconductor device, and determine a test temperature array based on a crystal impurity interference correction value and the temperature test point, wherein the test temperature array includes a plurality of corrected temperature test points; Acquire an optical characteristic parameter set of a semiconductor device, determine a light intensity test point based on the optical characteristic parameter set of the semiconductor device, and determine a test light intensity array based on a crystal impurity interference correction value and the light intensity test point, wherein the test light intensity array includes a plurality of corrected light intensity test points; Based on the test temperature array and the test light intensity array, several photothermal coupling test schemes are determined, each photothermal coupling test scheme is applied to the semiconductor device and an electrical characteristic test data set is obtained, the electrical characteristic test values ​​are calculated based on the electrical characteristic test data sets corresponding to each photothermal coupling test scheme, and the best photothermal coupling test scheme is determined.

2. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 1, characterized in that: The specific analysis process of obtaining the crystal impurity evaluation parameters of the semiconductor device is as follows: Perform X-ray diffraction on semiconductor devices to obtain target diffraction patterns; Acquire a test target phase and a test non-target phase stored in a database based on the semiconductor device type, mark the test target phase as a test main phase, and mark the test non-target phase as a test impurity phase; The crystal impurity evaluation parameters are obtained by comprehensively analyzing the target diffraction pattern based on the test main phase and the test impurity phase. The crystal impurity evaluation parameters include the relative intensity of the impurity phase diffraction peak, the integral area ratio of the main phase, the grain dislocation density, and the average grain size deviation rate.

3. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 1, characterized in that: The semiconductor device crystal impurity evaluation is performed based on the crystal impurity evaluation parameters to obtain the crystal impurity interference correction value, and the specific analysis process is as follows: Obtain crystal impurity assessment parameters; Obtaining a crystal impurity evaluation value based on the crystal impurity evaluation parameter calculation; Obtaining a crystal impurity calibration interval stored in a database, wherein the crystal impurity calibration interval includes a crystal impurity calibration upper limit and a crystal impurity calibration lower limit; Compare the crystal impurity assessment value with the crystal impurity calibration interval stored in the database to obtain a comparison result; If the crystal impurity assessment value is between the crystal impurity calibration upper limit and the crystal impurity calibration lower limit, the crystal impurity interference correction value is marked as 0; If the crystal impurity evaluation value is greater than the crystal impurity calibration upper limit, the crystal impurity evaluation value and the crystal impurity calibration upper limit are comprehensively analyzed to obtain the crystal impurity interference correction value; If the crystal impurity evaluation value is less than the crystal impurity calibration lower limit, the crystal impurity evaluation value and the crystal impurity calibration lower limit are comprehensively analyzed to obtain the crystal impurity interference correction value.

4. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 3, characterized in that: The crystal impurity interference correction value is specifically calculated as follows: In the formula, Z x is the crystal impurity interference correction value, Z p is the crystal impurity evaluation value, B a is the upper limit of crystal impurities calibration, B b It is the lower limit of crystal impurities, and e is a natural constant.

5. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 1, characterized in that: The temperature test point is determined based on the thermal characteristic parameter set of the semiconductor device, and the test temperature array is determined based on the crystal impurity interference correction value and the temperature test point. The test temperature array includes a number of corrected temperature test points. The specific analysis process is as follows: Acquire a thermal characteristic parameter set of a semiconductor device, wherein the thermal characteristic parameter set includes thermal conductivity, specific heat capacity, carrier concentration, and energy band gap width; Calculating thermal sensitivity characteristic values ​​based on a thermal characteristic parameter set; Matching temperature test points in the database based on thermal sensitive characteristic values; Obtain crystal impurity interference correction value; Obtain the crystal impurity interference correction grading standards stored in the database; Compare the crystal impurity interference correction grading standard and the crystal impurity interference correction value stored in the database to determine the crystal impurity interference correction level corresponding to the crystal impurity interference correction value; Correction levels based on crystal impurity interference match the test temperature intervals stored in the database; A number of corrected temperature test points are determined based on the temperature test points and the test temperature intervals, and the number of corrected temperature test points are marked as a test temperature array.

6. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 5, characterized in that: The specific calculation formula of the thermal sensitivity characteristic value is: Where r is the thermal sensitivity characteristic value, d is the thermal conductivity, b is the specific heat capacity, n is the carrier concentration, k is the energy band gap width, and e is the natural constant.

7. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 5, characterized in that: The light intensity test point is determined based on the optical characteristic parameter set of the semiconductor device, and the test light intensity array is determined based on the crystal impurity interference correction value and the light intensity test point. The test light intensity array includes a number of corrected light intensity test points. The specific analysis process is as follows: Acquiring an optical characteristic parameter set of a semiconductor device, wherein the optical characteristic parameter set includes carrier recombination time, light absorption coefficient, and carrier concentration; Calculating light sensitivity characteristic values ​​based on the light characteristic parameter set; Matching light intensity test points in the database based on light sensitivity characteristic values; Get the crystal impurity interference correction level; Correction levels based on crystal impurity interference match the test light intensity intervals stored in the database; A number of corrected light intensity test points are determined based on the light intensity test points and the test light intensity intervals, and the number of corrected light intensity test points are marked as a test light intensity array.

8. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 7, characterized in that: The specific analysis process of determining several light-thermal coupling test schemes based on the test temperature array and the test light intensity array is as follows: Obtain each corrected temperature test point in the test temperature array; Obtain each corrected light intensity test point in the test light intensity array; Cartesian product combination is performed on the corrected temperature test point and the corrected light intensity test point to obtain a light-thermal coupling test scheme and mark it. The light-thermal coupling test scheme is a combination of a corrected temperature test point and a corrected light intensity test point.

9. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 1, characterized in that: The specific analysis process of applying each photothermal coupling test scheme to a semiconductor device and obtaining an electrical characteristic test data set is as follows: Obtaining a test data set of electrical characteristics of a semiconductor device applied to any optical-thermal coupling test scheme, wherein the test data set of electrical characteristics includes a switching voltage, a saturation current, an electrical conductivity, and an electron mobility; Comprehensively analyzing the electrical characteristic test data set to obtain the applicability judgment result of the photothermal coupling test scheme, wherein the applicability judgment result of the photothermal coupling test scheme includes an inapplicable photothermal coupling test scheme and an applicable photothermal coupling test scheme; Acquire a set of electrical characteristic tested fusion factors set in a database, wherein the set of electrical characteristic tested fusion factors includes a switching voltage fusion factor, a saturation current fusion factor, a conductivity fusion factor, and an electron mobility fusion factor; Calculate the electrical characteristic test values ​​of the semiconductor applicable to the optical-thermal coupling test scheme based on the electrical characteristic test fusion factor set and the electrical characteristic test data set set in the database; The electrical characteristic test values ​​obtained after applying various applicable photothermal coupling test schemes to semiconductor devices are comprehensively statistically ranked to determine the best photothermal coupling test scheme, which is the photothermal coupling test scheme corresponding to the highest electrical characteristic test value among the applicable photothermal coupling test schemes.

10. The method for testing the photoelectric thermal characteristics of a semiconductor device according to claim 1, characterized in that: The comprehensive analysis of the electrical characteristics test data set obtains the light-thermal coupling test scheme applicability judgment result, and the light-thermal coupling test scheme applicability judgment result includes an unqualified light-thermal coupling test scheme and a qualified light-thermal coupling test scheme. The specific analysis process is: Obtain a test data set of electrical characteristics of a semiconductor device applied to any optical-thermal coupling test scheme; Obtain the saturation current standard value and conductivity basic value stored in the database; Determine whether the saturation current is less than the saturation current standard value: If so, the result of the light-thermal coupling test scheme applicability judgment is that the light-thermal coupling test scheme is not applicable, and the light-thermal coupling test scheme is not applicable, which means that the semi-conductive material cannot meet the basic applicability standard under the current light-thermal coupling test scheme; If not, determine whether the conductivity is greater than or equal to the conductivity base: If so, the light-thermal coupling test scheme applicability judgment result is that the light-thermal coupling test scheme is applicable, and the applicable light-thermal coupling test scheme means that the semi-conductive material can meet the basic applicability standard under the current light-thermal coupling test scheme; If not, the applicability judgment result of the optical-thermal coupling test scheme is that the optical-thermal coupling test scheme is not applicable.

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