High-productivity PECVD (Plasma Enhanced Chemical Vapor Deposition) system suitable for plating various film layers and film plating process thereof

Abstract

The invention relates to the field of photovoltaic equipment, and discloses a high-productivity PECVD (Plasma Enhanced Chemical Vapor Deposition) system suitable for plating various film layers and a coating process thereof, and the PECVD system comprises a sheet feeding preheating cavity, a one-stop coating module and a cooling sheet discharging cavity which are sequentially connected through gate valves. The sheet inlet preheating cavity comprises a sheet inlet and outlet stacking cavity and a heating plate, and the cooling sheet outlet cavity comprises a sheet inlet and outlet stacking cavity and a cooling plate. The one-stop film coating module comprises an isolation cavity and a plurality of process cavities for coating different film layers, and the isolation cavity is arranged between two adjacent process cavities through a gate valve; and each process cavity comprises a plurality of deposition cavities which are communicated with one another and can work independently. And a stack lifting mechanism is arranged in each of the in-and-out wafer stack cavity and the isolation cavity. The coating process adopts the PECVD system and comprises the following steps: S1, feeding and preheating; s2, film coating is conducted, specifically, a one-stop film coating mode is adopted for film coating, and an isolation process is set; and S3, cooling and discharging. According to the invention, the length of a production line can be shortened, the equipment and land occupation cost is saved, and the productivity efficiency can be improved.

Description

Technical Field

[0001] The present invention relates to the field of photovoltaic equipment, and in particular to a high-capacity PECVD system suitable for coating multiple film layers and a coating process thereof. Background Art

[0002] Traditional plate-type PECVD equipment uses a multi-station deposition technology with multiple deposition chambers in series to reduce equipment cycle time and increase the production capacity of a single machine. Although this technology is a feasible cost-reduction technology route, as research deepens, the multi-station deposition technology has found its shortcomings: the increase in the number of deposition chambers forces the process deposition to be evenly divided by the cycle time, affecting the integrity of the amorphous / microcrystalline composite film deposition process of a certain functional layer and narrowing the process window. Figure 5 As shown, a multi-station deposition technology is adopted, that is, a silicon wafer is formed by superimposing a coating through multiple deposition chambers. Since the process formula of each chamber is different, in order to ensure stable connection, each deposition chamber needs to be equipped with a pump group 700 and a gate valve 600. At the same time, the feeding rhythm of the multi-station deposition technology is fast, resulting in a short time for front and rear loading and unloading assistance. In order to ensure the matching of the operation rhythm, the layout needs to be arranged in sequence, such as the wafer feeding chamber 100, the preheating chamber 200, the process chamber 300, the cooling chamber 400, and the wafer discharge chamber 500. Since a cavity occupies a large area, the more chambers there are, the higher the equipment cost and the higher the cost of occupying the factory building. At the same time, when multi-station deposition is adopted, when the carrier is transferred in the process chamber, the gate valve 600 needs to be opened and closed, which increases the auxiliary time of deposition and affects the production capacity. Summary of the invention

[0003] The object of the present invention is to provide a high-capacity PECVD system and a coating process thereof suitable for coating multiple film layers, which can not only shorten the length of the production line, save equipment and land costs, but also improve production efficiency.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] The present invention discloses a high-capacity PECVD system suitable for coating multiple film layers, which comprises a film inlet preheating chamber, a one-stop film coating module and a film cooling outlet chamber which are sequentially connected through a gate valve;

[0006] The film inlet preheating chamber includes a film inlet and outlet stacking chamber and a heating plate, and the film cooling chamber includes a film inlet and outlet stacking chamber and a cooling plate;

[0007] The one-stop coating module includes an isolation chamber and several process chambers for coating different film layers, wherein the isolation chamber is arranged between two adjacent process chambers through a gate valve; each process chamber includes several deposition chambers that are interconnected and can work independently;

[0008] The sheet inlet and outlet stacking cavity and the isolation cavity are both provided with stacking lifting mechanisms.

[0009] Furthermore, the process chambers are provided with two types, namely an i-layer plating process chamber and a p-layer plating process chamber.

[0010] Furthermore, the number of deposition chambers in the i-layer plating process chamber is equal to the number of deposition chambers in the p-layer plating process chamber.

[0011] Furthermore, the number of deposition chambers of the i-layer plating process chamber and the number of deposition chambers of the p-layer plating process chamber are both four.

[0012] Furthermore, the one-stop coating module also includes a plurality of evacuation pump groups, and one evacuation pump group is connected to one or more deposition chambers in the same process chamber.

[0013] Furthermore, the film inlet and outlet stacking chamber includes a chamber, a carrier plate transmission mechanism, a stack lifting mechanism and a vacuum generator; the carrier plate transmission mechanism is arranged on both sides of the chamber; the stack lifting mechanism can be arranged in the film inlet preheating chamber so as to be movable up and down, and a plurality of support intervals for placing carrier plates are arranged on the stack lifting mechanism, and a heating plate or a cooling plate is arranged at the bottom of the support interval, and an avoidance area for avoiding the carrier plate transmission mechanism is arranged on the support interval, the heating plate and the cooling plate; when the stack lifting mechanism is lowered to the lowest point, the carrier plate transmission mechanism is located above the uppermost support interval, and when the stack lifting mechanism is raised to the highest point, the carrier plate transmission mechanism is located below the lowermost support interval; the vacuum generator is arranged outside the chamber.

[0014] Furthermore, the carrier transmission mechanism includes a transmission wheel and a transmission drive member, the transmission wheel is rotatably arranged on both sides of the cavity, the carrier is placed on the transmission wheel, and the transmission drive member is fixed outside the cavity and is dynamically connected to the transmission wheel for driving the transmission wheel to rotate.

[0015] Furthermore, the stack lifting mechanism includes a lifting drive unit, a guide rod group and a carrier storage frame; one end of the guide rod group is fixed to the upper end or the lower end of the cavity, and the other end passes through the carrier storage frame; the lifting drive unit is connected to the carrier storage frame, and is used to drive the carrier storage frame to move up and down along the guide rod group; the support gap is located in the carrier storage frame.

[0016] Furthermore, the sheet stacking chamber further comprises a chamber frame, the chamber is fixed above the chamber frame, one end of the vacuum generator is connected to the bottom of the chamber, and the other end is connected to the outside.

[0017] Furthermore, the stack lifting mechanism also includes an upper pull rod group, the lower ends of which are respectively connected to the upper end surface of the carrier plate storage frame at multiple points, and the upper ends are connected to the lifting drive unit.

[0018] Furthermore, the isolation cavity is the sheet inlet and outlet stacking cavity.

[0019] The present invention also discloses a coating process, which uses the above-mentioned high-capacity PECVD system suitable for coating multiple film layers, and includes the following steps:

[0020] S1, feeding and preheating: the silicon wafers are placed on the carrier and stacked into multiple layers; a batch is transported to the stack lifting mechanism of the wafer feeding preheating chamber for preheating;

[0021] S2, coating: transporting the preheated multi-layer substrates to the first process chamber in batches, coating the first film layer on the substrates by a one-stop deposition method; then transporting the multi-layer substrates to the isolation chamber in batches for gas washing and vacuuming, and then transporting them to the second process chamber in batches, coating the second film layer on the substrates by a one-stop deposition method, and so on for several layers of coating until the coating process is completed;

[0022] S3, cooling and unloading: the coated carriers are transported in batches to the stacking and lifting mechanism of the cooling and wafer unloading chamber for cooling, and after cooling, they are transported to the unloading machine to unload the silicon wafers.

[0023] Furthermore, in the step S1, the silicon wafers are first placed on the carrier by a loader and stacked into multiple layers, the gate valve leading to the wafer preheating chamber is opened, the multi-layer carrier is transported to the stacking lifting mechanism of the wafer preheating chamber, the gate valve is closed, and then the wafer preheating chamber is purged and evacuated until the vacuum degree and process gas are consistent with those of the first process chamber, and the silicon wafers on the carrier are heated at the same time.

[0024] Furthermore, in the step S2, the gate valve leading to the process chamber is first opened, and the heated multi-layer carrier is continuously transported layer by layer to the bottom of each deposition chamber of the first process chamber through the stack lifting mechanism; the gate valve is closed, the film preheating chamber is purged and vacuumed, the process gas is removed and the vacuum is broken to room pressure, and at the same time, each layer of the carrier in the first process chamber is lifted to the corresponding deposition chamber for coating the first film layer, and at the same time, the isolation chamber is purged and vacuumed until the vacuum degree and process gas in the isolation chamber are consistent with those in the first process chamber.

[0025] After the first film layer is plated, the gate valve leading to the isolation chamber and the gate valve leading to the first process chamber are opened, and the carriers plated with the first film layer are stacked on the stack lifting mechanism in the isolation chamber through the stack lifting mechanism, and the carriers on the sheet preheating chamber are simultaneously transported to the first process chamber; the gate valve is closed, and the isolation chamber is washed and evacuated until the vacuum degree and process gas in the isolation chamber are consistent with those in the second process chamber; at the same time, deposition electroplating is carried out in the first process chamber.

[0026] Open the gate valve leading to the second process chamber, and continuously transport the multi-layer carrier in the isolation chamber layer by layer to the bottom of each deposition chamber in the second process chamber through the stack lifting mechanism; close the gate valve, purge and evacuate the isolation chamber until the vacuum degree and process gas in the isolation chamber are consistent with those in the first process chamber, and at the same time lift each layer of the carrier in the second process chamber to the corresponding deposition chamber for coating the second film layer, and so on for several layers of coating until the coating process is completed.

[0027] Furthermore, in the step S3, the cooling wafer outlet chamber is first washed and evacuated until the vacuum degree and process gas are consistent with those of the last process chamber, and then the gate valve leading to the cooling wafer outlet chamber is opened, and the carriers coated with the film layer are stacked on the stack lifting mechanism in the cooling wafer outlet chamber with each layer of carriers through the stack lifting mechanism; the gate valve is closed, and the cooling wafer outlet chamber is washed to remove the process gas, cooled and broken to room pressure; then the gate valve leading to the unloader is opened, and the multi-layer carriers are transported to the unloader in batches, and the gate valve is closed, and the cooling wafer outlet chamber is washed and evacuated until the vacuum degree and process gas are consistent with those of the last process chamber, and the silicon wafers are unloaded through the unloader.

[0028] The benefits of the present invention are:

[0029] 1. The present invention adopts a one-stop deposition structure to replace the existing multi-station deposition technology. The deposition chambers in the process chamber are connected and can work independently. Therefore, it is not necessary to set up a vacuum pump group in each chamber. The exhaust pipes of several deposition chambers can be connected in series to the same pump group through pipes for vacuum exhaust, reducing the number of pump groups and saving costs. At the same time, the gate valves between the deposition chambers are eliminated, which can reduce the auxiliary process time of the process chamber, reduce the equipment beat, and improve production capacity.

[0030] 2. At the same time, the one-stop deposition structure is a long-cycle deposition, and the loading and unloading and pre-processing time of the front and rear ends are lengthened, so that the cavity can be integrated, and the functions of the existing technology of the film feeding cavity and preheating cavity, cooling cavity and film discharge cavity are merged into the film feeding preheating cavity and cooling film discharge cavity, reducing the number of cavities, shortening the length of the production line, reducing the land cost, and reducing the equipment processing and manufacturing cost and installation period.

[0031] 3. By setting up an isolation chamber to isolate the gas components between different process chambers, gas washing and vacuuming can be carried out in the isolation chamber, so that different film layers can be deposited on one line, and the equipment can be integrated to make the entire line more compact and reduce the floor space. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0033] Figure 1 is a schematic diagram of this embodiment.

[0034] Figure 2 It is a front cross-sectional view of this embodiment.

[0035] Figure 3 It is a side cross-sectional view of the inlet and outlet wafer stack cavity.

[0036] Figure 4 This is a schematic diagram of the avoidance zone.

[0037] Figure 5 It is a prior art diagram of the background art.

[0038] Main component symbols:

[0039] 1. Preheating chamber for film feeding;

[0040] 2. One-stop coating module, 21. i-layer coating process chamber, 211. first i-layer coating deposition chamber, 212. second i-layer coating deposition chamber, 213. third i-layer coating deposition chamber, 214. fourth i-layer coating deposition chamber, 22. p-layer coating process chamber, 221. first p-layer coating deposition chamber, 222. second p-layer coating deposition chamber, 223. third p-layer coating deposition chamber, 224. fourth p-layer coating deposition chamber, 25. vacuum pump group;

[0041] 3. Cooling the film cavity;

[0042] 4. In and out sheet stacking chamber, 41. Chamber frame, 42. Chamber, 43. Plate carrier transmission mechanism, 431. Transmission wheel, 432. Transmission drive member, 44. Stack lifting mechanism, 441. Support interval, 442. Avoidance zone, 443. Lifting drive unit, 444. Upper pull rod group, 445. Guide rod group, 446. Plate carrier storage frame, 45. Vacuum generator;

[0043] 5. Heating plate;

[0044] 6. Cooling plate.

[0045] 7. Isolation chamber,

[0046] 81, the first valve, 82, the second valve, 83, the third valve, 84, the fourth valve, 85, the fifth valve, 86, the sixth valve DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the specification. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] In the present invention, unless otherwise specified, directional words such as "upper, lower, left, right" are generally understood in conjunction with the directions shown in the drawings and actual applications.

[0049] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0050] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0051] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of each range, the endpoint values ​​of each range and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed in this article. Among them, the terms "optional" and "optional" all mean that they may be included or not included (or may be present or not).

[0052] like Figures 1 to 4 As shown, the present invention discloses a high-capacity PECVD system suitable for coating multiple film layers, which includes a film inlet preheating chamber 1, a one-stop coating module 2 and a film cooling outlet chamber 3 which are sequentially connected through a gate valve.

[0053] The one-stop coating module 2 includes an isolation chamber 7, an evacuation pump group 25 and a plurality of process chambers for coating different film layers. The isolation chamber 7 is arranged between two adjacent process chambers through a gate valve; each process chamber includes a plurality of deposition chambers that are interconnected and can work independently. An evacuation pump group 25 is connected to one or more deposition chambers in the same process chamber.

[0054] The film preheating chamber 1 includes a film stacking chamber 4 and a heating plate 5, and the film cooling chamber 3 includes a film stacking chamber 4 and a cooling plate 6. The film stacking chamber 4 and the isolation chamber 7 are both provided with a stacking lifting mechanism 44.

[0055] In this embodiment, two types of process chambers are provided, namely, an i-layer process chamber 21 for coating an intrinsic silicon passivation layer and a p-layer process chamber 22 for coating a P-type silicon doping layer. An isolation chamber 7 is provided between the i-layer process chamber 21 and the p-layer process chamber 22. The isolation chamber 7 adopts an inlet and outlet wafer stack chamber 4.

[0056] Among them, the number of deposition chambers of the i-layer coating process chamber 21 and the number of deposition chambers of the p-layer coating process chamber 22 are equal, both are four, namely the first i-layer coating deposition chamber 211, the second i-layer coating deposition chamber 212, the third i-layer coating deposition chamber 213 and the fourth i-layer coating deposition chamber 214, and the first p-layer coating deposition chamber 221, the second p-layer coating deposition chamber 222, the third p-layer coating deposition chamber 223 and the fourth p-layer coating deposition chamber 224.

[0057] Therefore, the PECVD system of this embodiment includes a loader, a film preheating chamber 1, a first i-layer deposition chamber 211, a second i-layer deposition chamber 212, a third i-layer deposition chamber 213, a fourth i-layer deposition chamber 214, an isolation chamber 7, a first p-layer deposition chamber 221, a second p-layer deposition chamber 222, a third p-layer deposition chamber 223, a fourth p-layer deposition chamber 224, a cooling film discharge chamber 3 and a unloader connected in sequence.

[0058] Among them, gate valves are arranged between the loader and the film preheating chamber 1, between the film preheating chamber 1 and the first i-layer deposition chamber 211, between the fourth i-layer deposition chamber 214 and the isolation chamber 7, between the isolation chamber 7 and the first p-layer deposition chamber 221, between the fourth p-layer deposition chamber 224 and the cooling film cavity 3, and between the cooling film cavity 3 and the unloader, which are the first gate valve 81, the second gate valve 82, the third gate valve 83, the fourth gate valve 84, the fifth gate valve 85, and the sixth gate valve 86 respectively.

[0059] The first coating layer deposition chamber 211, the second coating layer deposition chamber 212, the third coating layer deposition chamber 213, and the fourth coating layer deposition chamber 214 are interconnected and can work independently.

[0060] The first p-layer deposition chamber 221 , the second p-layer deposition chamber 222 , the third p-layer deposition chamber 223 and the fourth p-layer deposition chamber 224 are interconnected and can work independently.

[0061] The multi-station process chamber in the prior art is a short-cycle deposition structure, that is, multiple deposition chambers jointly deposit on a carrier, so that the carrier stays in the deposition chamber for a short time, and the front and rear end loading and unloading and pretreatment time are relatively short. Therefore, it is necessary to set up multiple pretreatment chambers to reduce the pretreatment time.

[0062] The one-stop process chamber designed in this embodiment is a long-cycle deposition structure, that is, each deposition chamber independently deposits a carrier plate, and multiple carrier plates are deposited simultaneously, thereby reserving a relatively long auxiliary time for front-end and rear-end loading and unloading and preprocessing, so that the functions of the film input chamber and preheating chamber, cooling chamber and film output chamber in the prior art can be merged into a film input preheating chamber 1 and a cooling film output chamber 3, thereby reducing the number of chambers, shortening the length of the production line, reducing the land cost, and reducing the equipment processing and manufacturing cost and installation period.

[0063] At the same time, the process chamber adopts a one-stop deposition structure instead of a multi-station deposition technology, and the gate valves between the deposition chambers are eliminated. Since the multiple deposition chambers of the one-stop process chamber are interconnected and have the same gas formula, it is not necessary to set up a vacuum pump group 25 for each chamber. The exhaust pipes of several deposition chambers can be connected in series to the same pump group through pipes for vacuum exhaust, reducing the number of pump groups and saving costs. The gate valves between the deposition chambers can also reduce the auxiliary process time of the process chamber, reduce the equipment cycle, and improve production capacity.

[0064] An isolation chamber 7 is provided between different process chambers to isolate the gas components between different process chambers. Gas washing and vacuuming can be performed in the isolation chamber 7, so that deposition of different film layers can be completed on one line. The equipment is integrated to make the entire line equipment more compact and reduce the floor space.

[0065] Specifically, Figure 3 , Figure 4 As shown, the sheet stacking chamber 4 includes a chamber frame 41 , a chamber 42 , a carrier plate transmission mechanism 43 , a stacking lifting mechanism 44 and a vacuum generator 45 .

[0066] The carrier plate transmission mechanism 43 is disposed on the cavity 42, and is used to transport the carrier plate to the workstation of the stack lifting mechanism 44. Specifically, the carrier plate transmission mechanism 43 includes a transmission wheel 431 and a transmission driving member 432, wherein the transmission wheel 431 is rotatably disposed on both sides of the cavity 42, the carrier plate is placed on the transmission wheel 431, and the transmission driving member 432 is fixed to the outside of the cavity 42 and is connected to the transmission wheel 431 for driving the transmission wheel 431 to rotate.

[0067] The stack lifting mechanism 44 is arranged in the film preheating chamber 1 so as to be movable up and down. The stack lifting mechanism 44 is provided with a plurality of support intervals 441 for placing carriers, and a heating plate 5 or a cooling plate 6 is provided at the bottom of the support intervals 441. The support intervals 441, the heating plate 5 and the cooling plate 6 are provided with avoidance areas 442 for avoiding the transmission wheels 431 of the carrier transmission mechanism 43. When the stack lifting mechanism 44 is lowered to the lowest position, the transmission wheel 431 is located above the uppermost support interval 441, and when the stack lifting mechanism 44 is raised to the highest position, the transmission wheel 431 is located below the lowermost support interval 441. Specifically, the stack lifting mechanism 44 includes a lifting drive unit 443, an upper pull rod group 444, a guide rod group 445 and a carrier storage frame 446. One end of the guide rod group 445 is fixed to the upper end or the lower end of the cavity 42, and the other end passes through the carrier storage frame 446. The guide rod assembly 445 of this embodiment is disposed at the lower end of the cavity 42 .

[0068] The lower ends of the upper pull rod group 444 are respectively connected to the upper end surface of the carrier storage frame 446 at multiple points, and the upper ends are connected to the lifting drive unit 443, which is used to drive the carrier storage frame 446 to move up and down along the guide rod group 445. The setting of the upper pull rod group 444 can make the carrier storage frame 446 more evenly stressed. The support spacer 441 is located in the carrier storage frame 446.

[0069] The cavity 42 is fixed above the cavity frame 41 , and one end of the vacuum generator 45 is connected to the bottom of the cavity 42 , and the other end is connected to the outside.

[0070] When in use, first lower the carrier storage frame 446 to the lowest point, and the carrier transmission mechanism 43 transports the carrier to the top of the carrier storage frame 446. The carrier storage frame 446 moves upward under the drive of the lifting drive unit 443, lifts the carrier, and stores it in the support interval 441 until several support intervals 441 are filled with carriers, and then close the gate valve for preheating. After preheating, the carrier storage frame 446 is lowered in turn, and the carriers are transferred to each deposition chamber of the process chamber in batches through the carrier transmission mechanism 43 for independent deposition. After deposition is completed, the same principle is used to cool the carrier in the cooling and discharging chamber 3 by raising and lowering the carrier storage frame 446, and then transport it to the next process.

[0071] This embodiment also discloses a coating process, which uses the above-mentioned high-capacity PECVD system suitable for coating multiple film layers, including the following steps:

[0072] S1. Feeding and preheating: The silicon wafers are placed on the carrier by the loader and stacked into multiple layers. The first gate valve 81 leading to the wafer feeding preheating chamber 1 is opened, and the multi-layer carrier is transported to the stacking lifting mechanism 44 of the wafer feeding preheating chamber 1. The first gate valve 81 is closed, and then the wafer feeding preheating chamber 1 is washed and evacuated until the vacuum degree and process gas are consistent with those of the i-layer coating process chamber 21, and the silicon wafers on the carrier are heated at the same time.

[0073] S2. Coating: open the second gate valve 82 leading to the i-layer coating process chamber 21, and continuously transport the heated multi-layer carrier layer by layer to the bottom of each deposition chamber of the i-layer coating process chamber 21 through the stack lifting mechanism 44; close the second gate valve 82, purge and break the vacuum of the film inlet preheating chamber 1, remove the process gas and break the vacuum to room pressure, and at the same time lift each layer of the carrier in the i-layer coating process chamber 21 to the corresponding deposition chamber to coat the first film layer, and at the same time purge and evacuate the isolation chamber 7 until the vacuum degree and process gas in the isolation chamber 7 are consistent with those in the i-layer coating process chamber 21.

[0074] After the first film layer is plated, the third gate valve 83 leading to the isolation chamber 7 and the second gate valve 82 leading to the i-layer plating process chamber 21 are opened, and the carriers plated with the first film layer are stacked on the stack lifting mechanism 44 in the isolation chamber 7 through the stack lifting mechanism 44, and the carriers on the sheet preheating chamber 1 are simultaneously transported to the i-layer plating process chamber 21; the third gate valve 83 and the second gate valve 82 are closed, and the isolation chamber 7 is washed and evacuated until the vacuum degree and process gas in the isolation chamber 7 are consistent with those in the p-layer plating process chamber 22; at the same time, the i-layer plating process chamber 21 is subjected to deposition electroplating.

[0075] Open the fourth gate valve 84 leading to the p-layer coating process chamber 22, and continuously transport the multi-layer carrier in the isolation chamber 7 layer by layer to the bottom of each deposition chamber in the p-layer coating process chamber 22 through the stack lifting mechanism 44; close the fourth gate valve 84, wash and evacuate the isolation chamber 7 until the vacuum degree and process gas in the isolation chamber 7 are consistent with those in the i-layer coating process chamber 21, and at the same time lift each layer of the carrier in the p-layer coating process chamber 22 to the corresponding deposition chamber for coating the second film layer.

[0076] S3, cooling and unloading: the cooling and discharging chamber 3 is cleaned and evacuated until the vacuum degree and process gas are consistent with those of the p-layer coating process chamber 22, and then the fifth gate valve 85 leading to the cooling and discharging chamber 3 is opened, and the carriers with the film layer coated are stacked on the stack lifting mechanism 44 in the cooling and discharging chamber 3 with each layer of the carriers through the stack lifting mechanism 44; the fifth gate valve 85 is closed, the cooling and discharging chamber 3 is cleaned and evacuated to remove the process gas, and the carriers are cooled and broken to room pressure; then the sixth gate valve 86 leading to the unloader is opened, and the multi-layer carriers are transported to the unloader in batches, and the sixth gate valve 86 is closed, and the cooling and discharging chamber 3 is cleaned and evacuated until the vacuum degree and process gas are consistent with those of the last process chamber, and the silicon wafers are unloaded through the unloader.

[0077] When the carrier in the wafer feeding preheating chamber 1 is sent to the i-layer plating process chamber 21, the gate valve is closed, and the i-layer plating process chamber 21 begins to deposit the coating: the loader puts the silicon wafers on the carrier, waiting for the carrier to be transported to the feeding preheating chamber. The wafer feeding preheating chamber 1 is simultaneously purged and vacuum-broken → receiving the carrier from the loader → purging, vacuuming, heating, and waiting for the carrier to be transported to the i-layer plating process chamber 21. The isolation chamber 7 is simultaneously purged and vacuumed → sending the carrier to the p-layer plating process chamber 22 → purging and vacuuming, waiting for the carrier from the i-layer plating process chamber 21.

[0078] When the carrier in the isolation chamber 7 is sent to the p-layer coating process chamber 22, the gate valve is closed, and the p-layer coating process chamber 22 begins to deposit the coating film: the cooling out of the wafer chamber 3 is simultaneously purged, vacuumed, and cooled → the carrier is sent to the unloader → purged, vacuumed, and waits to receive the carrier from the p-layer coating process chamber 22. The unloader unloads the silicon wafer from the carrier and waits to receive the carrier from the cooling out of the wafer chamber 3.

[0079] In summary, the present invention can not only shorten the length of the production line, save equipment and land costs, but also improve production efficiency.

[0080] The preferred embodiments of the present invention are described in detail above, but the present invention is not limited thereto. Within the technical concept of the present invention, the technical solution of the present invention can be subjected to a variety of simple modifications, including the combination of various technical features in any other suitable manner, and these simple modifications and combinations should also be regarded as the contents disclosed by the present invention and belong to the protection scope of the present invention.

Claims

1. A high-capacity PECVD system suitable for coating multiple film layers, characterized by: It includes a film inlet preheating chamber, a one-stop coating module and a film outlet cooling chamber which are connected in sequence through a gate valve; The film inlet preheating chamber includes a film inlet and outlet stacking chamber and a heating plate, and the film cooling chamber includes a film inlet and outlet stacking chamber and a cooling plate; The one-stop coating module includes an isolation chamber and several process chambers for coating different film layers, wherein the isolation chamber is arranged between two adjacent process chambers through a gate valve; each process chamber includes several deposition chambers that are interconnected and can work independently; The sheet inlet and outlet stacking cavity and the isolation cavity are both provided with stacking lifting mechanisms.

2. The high-capacity PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: There are two types of process chambers, namely an i-layer plating process chamber and a p-layer plating process chamber.

3. The high-capacity PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: The number of deposition chambers in the i-layer plating process chamber is equal to the number of deposition chambers in the p-layer plating process chamber.

4. The high-capacity PECVD system suitable for coating multiple film layers according to claim 3, characterized in that: The number of deposition chambers of the i-layer plating process chamber and the number of deposition chambers of the p-layer plating process chamber are both four.

5. The high-capacity PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: The one-stop coating module also includes a plurality of evacuation pump groups, and one evacuation pump group is connected to one or more deposition chambers in the same process chamber.

6. The high-capacity PECVD system suitable for coating multiple film layers according to claim 1, characterized in that: The film inlet and outlet stacking chamber comprises a chamber, a carrier plate transmission mechanism, a stack lifting mechanism and a vacuum generator; the carrier plate transmission mechanism is arranged on both sides of the chamber; the stack lifting mechanism can be arranged in the film inlet preheating chamber so as to be movable up and down, and a plurality of support intervals for placing carrier plates are arranged on the stack lifting mechanism, a heating plate or a cooling plate is arranged at the bottom of the support interval, and avoidance areas for avoiding the carrier plate transmission mechanism are arranged on the support interval, the heating plate and the cooling plate; when the stack lifting mechanism is lowered to the lowest position, the carrier plate transmission mechanism is located above the uppermost support interval, and when the stack lifting mechanism is raised to the highest position, the carrier plate transmission mechanism is located below the lowermost support interval; the vacuum generator is arranged outside the chamber.

7. The high-capacity PECVD system for coating multiple film layers according to claim 6, characterized in that: The carrier plate transmission mechanism includes a transmission wheel and a transmission driving member. The transmission wheel is rotatably arranged on both sides of the cavity, the carrier plate is placed on the transmission wheel, and the transmission driving member is fixed outside the cavity and is connected to the transmission wheel for driving the transmission wheel to rotate.

8. The high-capacity PECVD system for coating multiple film layers according to claim 6, characterized in that: The stack lifting mechanism includes a lifting drive unit, a guide rod group and a carrier plate storage frame; one end of the guide rod group is fixed to the upper end or the lower end of the cavity, and the other end passes through the carrier plate storage frame; the lifting drive unit is connected to the carrier plate storage frame, and is used to drive the carrier plate storage frame to move up and down along the guide rod group; the support gap is located in the carrier plate storage frame.

9. The high-capacity PECVD system for coating multiple film layers according to claim 6, characterized in that: The sheet stacking chamber further comprises a chamber frame, the chamber is fixed above the chamber frame, one end of the vacuum generator is connected to the bottom of the chamber, and the other end is connected to the outside.

10. The high-capacity PECVD system suitable for coating multiple film layers according to claim 6, characterized in that: The stack lifting mechanism also includes an upper pull rod group, the lower ends of which are respectively connected to the upper end surface of the carrier plate storage frame at multiple points, and the upper ends are connected to the lifting drive unit.

11. The high-capacity PECVD system for coating multiple film layers according to claim 6, characterized in that: The isolation cavity is the inlet and outlet sheet stacking cavity.

12. A coating process, characterized in that A high-capacity PECVD system suitable for coating multiple film layers according to any one of claims 1 to 11 is used, comprising the following steps: S1, feeding and preheating: the silicon wafers are placed on the carrier and stacked into multiple layers; a batch is transported to the stack lifting mechanism of the wafer feeding preheating chamber for preheating; S2, coating: transporting the preheated multi-layer substrates to the first process chamber in batches, coating the first film layer on the substrates by a one-stop deposition method; then transporting the multi-layer substrates to the isolation chamber in batches for gas washing and vacuuming, and then transporting them to the second process chamber in batches, coating the second film layer on the substrates by a one-stop deposition method, and so on for several layers of coating until the coating process is completed; S3, cooling and unloading: the coated carriers are transported in batches to the stacking and lifting mechanism of the cooling and wafer unloading chamber for cooling, and after cooling, they are transported to the unloading machine to unload the silicon wafers.

13. The coating process according to claim 12, characterized in that: In the step S1, the silicon wafers are first placed on the carrier by a loader and stacked into multiple layers, the gate valve leading to the wafer preheating chamber is opened, the multi-layer carrier is transported to the stacking lifting mechanism of the wafer preheating chamber, the gate valve is closed, and then the wafer preheating chamber is purged and evacuated until the vacuum degree and process gas are consistent with those of the first process chamber, and the silicon wafers on the carrier are heated at the same time.

14. The coating process according to claim 13, characterized in that: In the step S2, the gate valve leading to the process chamber is first opened, and the heated multi-layer carrier is continuously transported layer by layer to the bottom of each deposition chamber of the first process chamber through the stack lifting mechanism; the gate valve is closed, the film inlet preheating chamber is purged and vacuumed, the process gas is removed and the vacuum is broken to room pressure, and each layer of the carrier in the first process chamber is lifted to the corresponding deposition chamber for coating the first film layer, and the isolation chamber is purged and vacuumed until the vacuum degree and process gas in the isolation chamber are consistent with those of the first process chamber; After the first film layer is plated, the gate valve leading to the isolation chamber and the gate valve leading to the first process chamber are opened, and the carriers plated with the first film layer are stacked on the stack lifting mechanism in the isolation chamber through the stack lifting mechanism, and the carriers on the sheet feeding preheating chamber are simultaneously transported to the first process chamber; the gate valve is closed, and the isolation chamber is washed and vacuumed until the vacuum degree and process gas in the isolation chamber are consistent with those in the second process chamber; At the same time, the first process chamber performs deposition electroplating; Open the gate valve leading to the second process chamber, and continuously transport the multi-layer carrier in the isolation chamber layer by layer to the bottom of each deposition chamber in the second process chamber through the stack lifting mechanism; close the gate valve, purge and evacuate the isolation chamber until the vacuum degree and process gas in the isolation chamber are consistent with those in the first process chamber, and at the same time lift each layer of the carrier in the second process chamber to the corresponding deposition chamber for coating the second film layer, and so on for several layers of coating until the coating process is completed.

15. The coating process according to claim 14, characterized in that: In the step S3, the cooling wafer discharge chamber is first washed and evacuated until the vacuum degree and process gas are consistent with those of the last process chamber, then the gate valve leading to the cooling wafer discharge chamber is opened, and the carriers with the film layer coated are stacked on the stack lifting mechanism in the cooling wafer discharge chamber with each layer of carriers through the stack lifting mechanism; the gate valve is closed, the cooling wafer discharge chamber is washed to remove the process gas, cooled and broken to room pressure; then the gate valve leading to the unloader is opened, and the multi-layer carriers are transported to the unloader in batches, the gate valve is closed, the cooling wafer discharge chamber is washed and evacuated until the vacuum degree and process gas are consistent with those of the last process chamber, and the silicon wafers are unloaded through the unloader.

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