Space type ALD coating device, coating method and composite film

Abstract

The invention provides a spatial ALD (atomic layer deposition) coating device, a coating method and a composite film. According to the spatial ALD coating device, a coating cavity comprises at least one group of reaction areas which are connected in sequence, and the adjacent reaction areas are isolated through air curtains; each group of reaction areas consists of a precursor reaction area and a co-reactant reaction area which are separated by an air curtain; the gas inlet assembly comprises a precursor source gas inlet piece, a co-reactant source gas inlet piece and a gas curtain supply piece; the precursor source gas inlet piece comprises a precursor source gas supply device and a precursor source gas transmission device; the co-reactant source gas inlet piece comprises a co-reactant source gas supply device and a co-reactant source gas transmission device; the air curtain supply part comprises an air curtain air supply device and an air curtain air conveying device; and the substrate to be coated is driven by the conveying mechanism to sequentially pass through each group of reaction areas. According to the spatial ALD coating device, the preparation of a composite film with any material ratio can be realized according to requirements, the production efficiency is improved, and the application range is widened.

Description

Technical Field

[0001] The present invention belongs to the field of film coating technology, and in particular relates to a spatial ALD film coating device, a film coating method and a composite film. Background Art

[0002] Atomic layer deposition (ALD) is a high-precision thin film preparation technology based on chemical vapor deposition (CVD). It is a technology that deposits material on the substrate surface layer by layer in the form of a single atomic film based on chemical vapor. Two or more precursor chemicals containing different elements of the deposited material are introduced into the substrate surface one element at a time. Each precursor saturates the substrate surface to form a single layer of material.

[0003] The current ALD can be classified into time-type ALD or space-type ALD based on the growth sequence. Time-type ALD is to introduce the precursor, purge, introduce the co-reactant and purge in a chamber in a time sequence, and complete the coating cycle in this way; space-type ALD is to place each step at different positions on the production line, so that the substrate passes through different chambers in sequence under the drive mechanism, and one cycle of movement completes the preparation of a single atomic film, exchanging space for time, which can greatly improve production efficiency.

[0004] However, general spatial ALD can only prepare single-element film layers, or multi-layer films mixed in specific proportions. It is unable to prepare films in specific proportions according to different needs, and its uses are limited, so it cannot be widely used.

[0005] Therefore, it is urgent to design a new type of spatial ALD coating device to realize the preparation of composite films with any material ratio according to needs, so as to improve the application scope and function of the spatial ALD coating device. Summary of the invention

[0006] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a spatial ALD coating device, a coating method and a composite film. The spatial ALD coating device designed by the present invention can realize the preparation of composite films with any material ratio according to needs, and the control is precise, which not only greatly improves the production efficiency, but also broadens the application scope of the spatial ALD coating device, and has a bright development prospect.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] In a first aspect, the present invention provides a spatial ALD coating device, the spatial ALD coating device comprising:

[0009] A coating chamber, the coating chamber comprising at least one group of reaction areas connected in sequence, and adjacent reaction areas are isolated by air curtains; each group of reaction areas consists of a precursor reaction area and a co-reactant reaction area separated by the air curtains, and is used for depositing a film layer.

[0010] An air inlet assembly includes a precursor source air inlet component, a co-reactant source air inlet component and an air curtain supply component.

[0011] The precursor source gas inlet component includes a precursor source gas supply device and a precursor source gas delivery device, and a first gas delivery port is provided on the precursor source gas delivery device for delivering the precursor source provided by the precursor source gas supply device to the precursor reaction area with the help of the precursor source gas delivery device; the co-reactant source gas inlet component includes a co-reactant source gas supply device and a co-reactant source gas delivery device, and a second gas delivery port is provided on the co-reactant source gas delivery device for delivering the co-reactant source provided by the co-reactant source gas supply device to the co-reactant reaction area with the help of the co-reactant source gas delivery device; the air curtain supply component includes an air curtain gas supply device and an air curtain gas delivery device, and a third gas delivery port is provided on the air curtain gas delivery device for delivering the gas source provided by the air curtain gas supply device to adjacent reaction areas with the help of the air curtain gas delivery device to act as a gas air curtain.

[0012] A conveying mechanism is provided with a carrier for carrying the substrate to be coated. The substrate to be coated passes through each group of reaction areas in sequence under the drive of the conveying mechanism.

[0013] The spatial ALD coating device designed in the present invention can realize the preparation of composite films with any material ratio according to needs, and the control is precise, which not only greatly improves the production efficiency, but also broadens the application scope of the spatial ALD coating device and has a bright development prospect.

[0014] Preferably, the precursor source gas delivery device is connected to the precursor source gas supply device via a first gas supply pipeline, and a first regulating valve is provided on the first gas supply pipeline.

[0015] Preferably, the co-reactant source gas delivery device is connected to the co-reactant source gas supply device via a second gas supply pipeline, and a second regulating valve is provided on the second gas supply pipeline.

[0016] Preferably, the air curtain gas delivery device is connected to the air curtain gas supply device via a third gas supply pipeline, and a third regulating valve is provided on the third gas supply pipeline.

[0017] Preferably, the first gas delivery port delivers the precursor source to the precursor reaction area through a first gas delivery pipeline, and a fourth regulating valve is provided on the first gas delivery pipeline.

[0018] Preferably, the second gas delivery port delivers the co-reactant source to the co-reactant reaction area through a second gas delivery pipeline, and a fifth regulating valve is provided on the second gas delivery pipeline.

[0019] Preferably, the precursor source includes at least one of an In source, a Ga source, a Zn source, a Ti source, an Al source and a Si source.

[0020] Preferably, the number of the first gas delivery port on the precursor source gas delivery device is at least one, and each of the first gas delivery ports is connected to the precursor reaction region in each group of the reaction regions.

[0021] Preferably, the number of the second gas delivery port on the co-reactant source gas delivery device is at least one, and each of the second gas delivery ports is connected to the co-reactant reaction region in each group of the reaction regions.

[0022] Preferably, the co-reactant source comprises any one or a combination of at least two of an oxygen source, ammonia or H2O;

[0023] Preferably, the gas source provided by the air curtain gas supply device includes nitrogen or argon.

[0024] Preferably, a heating element is provided on the carrier and is located below the substrate to be coated, for heating the substrate to be coated.

[0025] Preferably, the spatial ALD coating device is a rotary structure or a linear structure.

[0026] Preferably, the conveying mechanism is a one-way conveying mechanism or a reciprocating conveying mechanism.

[0027] In a second aspect, the present invention provides a coating method, wherein the coating method adopts the spatial ALD coating device as described in the first aspect to perform coating, comprising the following steps:

[0028] (1) The carrier carrying the substrate to be coated is transferred to the first group of reaction areas, and passes through the gas curtain, precursor reaction area, gas curtain, co-reactant reaction area and gas curtain in sequence to perform an atomic layer deposition process.

[0029] (2) According to the deposition process of step (1), the atomic layer deposition process is carried out in sequence and group by group to obtain the desired composite film.

[0030] Preferably, the coating method comprises the following steps:

[0031] (1) The carrier carrying the substrate to be coated is driven by the conveying mechanism to the first group of reaction areas, enters the precursor reaction area through the gas curtain, deposits the precursor material, and then enters the co-reactant reaction area through the gas curtain, so that the co-reactant source entering the co-reactant reaction area reacts with the deposited precursor material to form a film layer, and then passes through the gas curtain to complete an atomic layer deposition process.

[0032] (2) According to the atomic layer deposition process described in step (1), the carrier carrying the substrate to be coated passes through the remaining groups of reaction areas in sequence to obtain a composite film with the required ratio.

[0033] In a third aspect, the present invention provides a composite film, wherein the composite film is obtained by the coating method as described in the second aspect.

[0034] Preferably, the composite film includes any one of an IGZO film, an AZO film or a TSO film.

[0035] The system refers to an equipment system, a device system or a production device.

[0036] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] The spatial ALD coating device designed in the present invention can be equipped with one or at least two groups of reaction areas according to needs, such as according to the size of the substrate and the size of the plant, to achieve the preparation of composite films with arbitrary material ratios and arrangement sequences with precise control, which not only greatly improves the production efficiency but also broadens the application scope of the spatial ALD coating device and has a bright development prospect. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 This is a simplified schematic diagram of the structure of the spatial ALD coating device provided in Example 1 of the present invention.

[0040] Among them, 1-gas curtain; 2-precursor reaction area; 3-co-reactant reaction area; 4-In source gas pipeline; 5-Ga source gas pipeline; 6-Zn source gas pipeline; 7-In source gas supply bottle; 8-Ga source gas supply bottle; 9-Zn source gas supply bottle; 10-first gas supply port; 11-co-reactant source gas pipeline; 12-co-reactant source gas supply bottle; 13-second gas supply port; 14-air curtain gas pipeline; 15-air curtain gas supply bottle; 16-third gas supply port; 17-substrate to be coated. DETAILED DESCRIPTION

[0041] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0042] It should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.

[0043] In a specific embodiment, the present invention provides a spatial ALD coating device, comprising:

[0044] The coating chamber includes at least one group of reaction areas connected in sequence, and adjacent reaction areas are isolated by air curtains; each group of reaction areas is composed of a precursor reaction area and a co-reactant reaction area separated by an air curtain, and is used for depositing a film layer.

[0045] The gas inlet assembly includes a precursor source gas inlet component, a co-reactant source gas inlet component and a gas curtain supply component.

[0046] Specifically, the precursor source gas inlet component includes a precursor source gas supply device and a precursor source gas delivery device, and the precursor source gas delivery device is provided with a first gas delivery port, which is used to transport the precursor source provided by the precursor source gas supply device to the precursor reaction area with the help of the precursor source gas delivery device; the co-reactant source gas inlet component includes a co-reactant source gas supply device and a co-reactant source gas delivery device, and the co-reactant source gas delivery device is provided with a second gas delivery port, which is used to transport the co-reactant source provided by the co-reactant source gas supply device to the co-reactant reaction area with the help of the co-reactant source gas delivery device; the air curtain supply component includes an air curtain gas supply device and an air curtain gas delivery device, and the air curtain gas delivery device is provided with a third gas delivery port, which is used to transport the gas source provided by the air curtain gas supply device to adjacent reaction areas with the help of the air curtain gas delivery device to act as a gas air curtain.

[0047] A conveying mechanism is provided with a carrier for carrying the substrate to be coated. The substrate to be coated passes through each group of reaction areas in sequence under the drive of the conveying mechanism.

[0048] The spatial ALD coating device designed in the present invention can realize the preparation of composite films with any material ratio according to needs, and the control is precise, which not only greatly improves the production efficiency, but also broadens the application scope of the spatial ALD coating device and has a bright development prospect.

[0049] In the present invention, the precursor reaction area and the co-reactant reaction area separated by the gas curtain cooperate with each other to realize the spatial atomic layer deposition method of coating, which is conducive to obtaining a film material with precise thickness and high film purity.

[0050] In the present invention, at least one group of reaction regions may be, for example, 1 group, 2 groups, 3 groups, 4 groups, 5 groups or 6 groups, etc. When there is only one group of reaction regions, composite membrane preparation with any integer ratio and any sequence can be achieved; the more groups of reaction regions, the more conducive to improving efficiency.

[0051] In the present invention, the gas curtain can not only play the role of separating the reaction areas, but also play the role of purging.

[0052] Furthermore, the precursor source gas delivery device is connected to the precursor source gas supply device via a first gas supply pipeline, and a first regulating valve is provided on the first gas supply pipeline.

[0053] Furthermore, the co-reactant source gas delivery device is connected to the co-reactant source gas supply device via a second gas supply pipeline, and a second regulating valve is provided on the second gas supply pipeline.

[0054] Furthermore, the air curtain gas delivery device is connected to the air curtain gas supply device through a third gas supply pipeline, and a third regulating valve is arranged on the third gas supply pipeline. It should be noted that the third regulating valve is used to adjust the inflow flow of the gas source.

[0055] Furthermore, the first gas delivery port delivers the precursor source to the precursor reaction area through the first gas delivery pipeline, and a fourth regulating valve is provided on the first gas delivery pipeline. It should be noted that the fourth regulating valve is used to adjust the inflow flow of the precursor source.

[0056] Furthermore, the second gas delivery port delivers the co-reactant source to the co-reactant reaction area through the second gas delivery pipeline, and a fifth regulating valve is provided on the second gas delivery pipeline. It should be noted that the fifth regulating valve is used to adjust the inflow flow of the co-reactant source.

[0057] Furthermore, the precursor source gas delivery device includes at least one independently controlled precursor source gas delivery pipeline. Exemplarily, the number of precursor source gas delivery pipelines may be 1, 2, 3 or 4.

[0058] Further, the precursor source includes at least one of an In source, a Ga source, a Zn source, a Ti source, an Al source, and a Si source. Exemplarily, the In source may be, for example, DADI ([3-(dimethylamino)propyl]dimethylindium, CAS No.: 120441-92-1), etc., the Ga source may be, for example, TMGa (trimethylgallium), etc., and the Zn source may be, for example, DEZ (diethylzinc), etc.

[0059] Further, the precursor source gas inlet includes three independently controlled precursor source gas delivery pipelines, and the precursor source delivered by each precursor source gas delivery pipeline is any one of an In source, a Ga source, and a Zn source. Exemplarily, the In source may be DADI, for example, the Ga source may be TMGa, and the Zn source may be DEZ, for example.

[0060] Furthermore, the number of the first gas delivery port on the precursor source gas delivery device is at least one, and each of the first gas delivery ports is connected to the precursor reaction area in each group of reaction areas.

[0061] In the present invention, for the precursor reaction area in each group of reaction areas, there are multiple precursor source delivery channels, and one precursor source or multiple precursor sources can be selectively introduced at the same time. This design is conducive to the generation of thin films with different components in different groups of chambers. By changing the chemical source introduced, the effect of adjusting the structure and proportion of the composite film can be achieved without changing the equipment.

[0062] Preferably, the co-reactant source gas delivery device includes at least one independently controlled co-reactant source gas delivery pipeline, for example, 1, 2, 3, 4 or 5.

[0063] Furthermore, the gas source provided by the air curtain gas supply device includes any one of an oxygen source, ammonia or H2O, or a combination of at least two of them.

[0064] Further, the oxygen source includes ozone or ionized oxygen.

[0065] Furthermore, the air curtain gas delivery device is an inert gas source gas delivery pipeline, and the inert gas source delivered by the inert gas source gas delivery pipeline includes nitrogen or argon.

[0066] Furthermore, a heating element is provided on the carrier and is located below the substrate to be coated, and is used for heating the substrate to be coated.

[0067] In the present invention, the purpose of designing the heating element is to increase the substrate temperature and the activity of the chemical source so that the chemical source enters a suitable reaction window area.

[0068] Furthermore, the precursor source gas supply device is a precursor source gas supply bottle, for example, it can be an In source gas supply bottle, a Ga source gas supply bottle or a Zn source gas supply bottle.

[0069] Furthermore, the co-reactant source gas supply device is a co-reactant source gas supply bottle, for example, it can be an oxygen source gas supply bottle, an ammonia gas supply bottle or a H2O gas supply bottle.

[0070] Furthermore, the air curtain gas supply device is an air curtain gas supply bottle, for example, it can be a nitrogen gas supply bottle or an argon gas supply bottle.

[0071] Furthermore, the transmission mechanism is a conveyor belt or a conveyor track.

[0072] Furthermore, the spatial ALD coating device is a rotary structure or a linear structure.

[0073] Furthermore, the conveying mechanism is a one-way conveying mechanism or a reciprocating conveying mechanism.

[0074] It should be noted that the reciprocating conveying mechanism is suitable for the preparation of composite films with greater thickness.

[0075] In the present invention, the spatial ALD coating device with a rotary structure does not need to make the substrate to be coated move back and forth.

[0076] Furthermore, when the spatial ALD coating device is a linear structure, the device also includes a program adjustment system for adjusting the type of precursor source introduced into each precursor reaction area.

[0077] In the present invention, for thinner film layers, one unidirectional movement is generally performed in a linear structure space type ALD coating device to complete the coating. For thicker film layers, a program needs to be set in the space type ALD coating device, so that when the substrate to be coated moves in the reverse direction, the type of precursor source introduced into each precursor reaction area can be adjusted, so that the film forming reaction can be carried out according to the designed composite film sequence. In particular, when the substrate to be coated is large, the space type ALD coating device of this structure is more suitable.

[0078] In another specific embodiment, the present invention provides a coating method, which uses the above-mentioned spatial ALD coating device to perform coating, comprising the following steps:

[0079] (1) The carrier carrying the substrate to be coated is transferred to the first group of reaction areas, and passes through the gas curtain, precursor reaction area, gas curtain, co-reactant reaction area and gas curtain in sequence to perform an atomic layer deposition process.

[0080] (2) According to the deposition process of step (1), the atomic layer deposition process is carried out in sequence and group by group to obtain the desired composite film.

[0081] It should be noted that in the present invention, the flow rate of the chemical source (precursor source or co-reactant source), the temperature and pressure in each group of reaction zones are selected to have different values ​​for different chemical sources, as long as the final required composite membrane component ratio can be obtained.

[0082] In the present invention, suitable temperature and pressure in the precursor reaction area are helpful to improve the activity of the chemical source, make it diffuse evenly, achieve equilibrium between adsorption and desorption, complete the reaction, and obtain a film layer with high purity and density, good film thickness uniformity, etc.

[0083] In the present invention, suitable temperature and pressure in the reaction area of ​​the co-reactant are conducive to the controllable growth of the film layer in thickness, structure, crystal orientation, etc., and with the matching of corresponding processes, a film layer with high purity and good density can be obtained, which is easy to further etch and modify.

[0084] Furthermore, the coating method comprises the following steps:

[0085] (1) The carrier carrying the substrate to be coated is driven by the conveying mechanism to the first group of reaction areas, enters the precursor reaction area through the gas curtain, deposits the precursor material, and then enters the co-reactant reaction area through the gas curtain, so that the co-reactant source entering the co-reactant reaction area reacts with the deposited precursor material to form a film layer, and then passes through the gas curtain to complete an atomic layer deposition process.

[0086] (2) According to the atomic layer deposition process of step (1), the carrier carrying the substrate to be coated passes through the remaining groups of reaction areas in sequence to obtain a composite film with the required ratio.

[0087] In another specific embodiment, the present invention provides a composite film, which is obtained by the above-mentioned coating method.

[0088] Further, the composite film includes any one of an IGZO film, an AZO (aluminum-doped zinc oxide) film, or a TSO film (ie, a stacked layer of titanium oxide and silicon oxide).

[0089] It should be noted that IGZO (Indium-Gallium-Zinc-Oxide) film is an oxide semiconductor film containing indium (In), gallium (Ga), zinc (Zn) and oxygen (O). Its chemical composition ratio can be adjusted according to specific application requirements. For example, in IGZO film, InO:GaO:ZnO=1:1:1 or 2:1:1, etc.

[0090] Furthermore, the thickness of the composite film is 15-30 nm, for example, 15 nm, 20 nm, 25 nm or 30 nm.

[0091] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0092] Example 1

[0093] This embodiment provides a linear spatial ALD coating device, and its schematic diagram is as follows: Figure 1 As shown, the spatial ALD coating device includes:

[0094] The coating chamber includes three groups of reaction areas connected in sequence, and adjacent reaction areas are isolated by a gas curtain 1; each group of reaction areas is composed of a precursor reaction area 2 and a co-reactant reaction area 3 separated by a gas curtain 1, and is used for depositing film layers.

[0095] The air inlet assembly includes a precursor source air inlet component, a co-reactant source air inlet component and an air curtain supply component.

[0096] The precursor source gas inlet component includes a precursor source gas supply device and a precursor source gas delivery device, wherein the precursor source gas supply device is a precursor source gas supply bottle, and the precursor source gas delivery device includes independently controlled In source gas delivery pipeline 4, Ga source gas delivery pipeline 5 and Zn source gas delivery pipeline 6, In source gas delivery pipeline 4 and In source gas supply bottle 7, Ga source gas delivery pipeline 5 and Ga source gas supply bottle 8, and Zn source gas delivery pipeline 6 and Zn source gas supply bottle 9 are respectively connected through their own independently controlled first gas supply pipelines, and a first regulating valve is arranged on the first gas supply pipeline; three first gas delivery ports 10 are opened on each gas delivery pipeline, which are respectively used to transport the precursor source to the precursor reaction area 2 in each group of reaction areas through the first gas delivery pipeline, and a fourth regulating valve is arranged on the first gas delivery pipeline.

[0097] The co-reactant source gas inlet component includes a co-reactant source gas supply device and a co-reactant source gas delivery device, the co-reactant source gas supply device is a co-reactant source gas supply bottle 12, the co-reactant source gas delivery device is a co-reactant source gas delivery pipeline 11, the co-reactant source gas delivery pipeline 11 is connected to the co-reactant source gas supply bottle 12 through a second gas supply pipeline, and a second regulating valve is arranged on the second gas supply pipeline; three second gas delivery ports 13 are opened on the co-reactant source gas delivery pipeline 11, the second gas delivery ports 13 deliver the co-reactant source to the co-reactant reaction area 3 in each group of reaction areas through the second gas delivery pipeline, and a fifth regulating valve is arranged on the second gas delivery pipeline; the co-reactant source delivered by the co-reactant source gas delivery pipeline 11 is plasma oxygen.

[0098] The air curtain supply component includes an air curtain air supply device and an air curtain gas delivery device. The air curtain air supply device is an air curtain gas supply bottle 15, and the air curtain gas delivery device is an air curtain gas delivery pipeline 14. The air curtain gas delivery pipeline 14 is connected to the air curtain gas supply bottle 15 through a third gas supply pipeline, and a third regulating valve is arranged on the third gas supply pipeline; a plurality of third gas delivery ports 16 are provided on the air curtain gas delivery pipeline 14, which are used to deliver the gas source provided by the air curtain gas supply bottle 15 to adjacent reaction areas via the air curtain gas delivery pipeline 14 to act as a gas air curtain; the gas source delivered by the air curtain gas delivery pipeline 14 is nitrogen.

[0099] A one-way conveyor belt is provided with a carrier for carrying the substrate 17 to be coated. The substrate 17 to be coated passes through each reaction area in sequence under the drive of the one-way conveyor belt. A heating element is provided on the carrier, located below the substrate 17 to be coated, for heating the substrate 17 to be coated.

[0100] This embodiment also provides a coating method, which uses the above-mentioned spatial ALD coating device to perform coating, including the following steps:

[0101] (1) The carrier carrying the substrate to be coated is driven by a one-way conveyor belt and transported to the first group of reaction areas. It enters the first precursor reaction area through a nitrogen gas curtain to deposit DADI. Then, it enters the first co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the first co-reactant reaction area reacts with the deposited DADI to form an InO film layer. Then, it passes through a nitrogen gas curtain to complete an atomic layer deposition process.

[0102] (2) The carrier carrying the substrate to be coated is transferred to the second group of reaction areas, TMGa is deposited in the second precursor reaction area, and then enters the second co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the second co-reactant reaction area reacts with the deposited TMGa to form a GaO film layer, and then passes through a nitrogen gas curtain to complete an atomic layer deposition process.

[0103] (3) The carrier carrying the substrate to be coated is transferred to the third group of reaction areas, DEZ is deposited in the third precursor reaction area, and then enters the third co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the third co-reactant reaction area reacts with the deposited DEZ to form a ZnO film layer, and then passes through a nitrogen gas curtain to complete an atomic layer deposition process to obtain an IGZO film with a ratio of InO:GaO:ZnO=1:1:1.

[0104] (4) Repeat steps (1) to (3) multiple times until an IGZO film of desired thickness is obtained.

[0105] Example 2

[0106] This embodiment provides a linear structure spatial ALD coating device, the spatial ALD coating device comprising:

[0107] The coating chamber includes four groups of reaction areas connected in sequence, and adjacent reaction areas are isolated by inert gas curtains; each group of reaction areas is composed of a precursor reaction area and a co-reactant reaction area separated by an inert gas curtain, and is used for depositing film layers.

[0108] The air inlet assembly includes a precursor source air inlet component, a co-reactant source air inlet component and an air curtain supply component.

[0109] The precursor source gas inlet component includes a precursor source gas supply device and a precursor source gas delivery device, wherein the precursor source gas supply device is a precursor source gas supply bottle, and the precursor source gas delivery device includes independently controlled In source gas delivery pipelines, Ga source gas delivery pipelines and Zn source gas delivery pipelines, the In source gas delivery pipeline and the In source gas supply bottle, the Ga source gas delivery pipeline and the Ga source gas supply bottle, and the Zn source gas delivery pipeline and the Zn source gas supply bottle are respectively connected through respectively independently controlled first gas supply pipelines, and a first regulating valve is arranged on the first gas supply pipeline; four first gas delivery ports are opened on each gas delivery pipeline, which are respectively used to transport the precursor source to the precursor reaction area in each group of reaction areas through the first gas delivery pipeline, and a fourth regulating valve is arranged on the first gas delivery pipeline.

[0110] The co-reactant source gas inlet component includes a co-reactant source gas supply device and a co-reactant source gas delivery device, the co-reactant source gas supply device is a co-reactant source gas supply bottle, the co-reactant source gas delivery device is a co-reactant source gas delivery pipeline, the co-reactant source gas delivery pipeline is connected to the co-reactant source gas supply bottle through a second gas supply pipeline, and a second regulating valve is arranged on the second gas supply pipeline; four second gas delivery ports are opened on the co-reactant source gas delivery pipeline, the second gas delivery ports transport the co-reactant source to the co-reactant reaction area in each group of reaction areas through the second gas delivery pipeline, and a fifth regulating valve is arranged on the second gas delivery pipeline; the co-reactant source transported by the co-reactant source gas delivery pipeline is plasma oxygen.

[0111] The air curtain supply component includes an air curtain air supply device and an air curtain gas delivery device. The air curtain air supply device is an air curtain air supply bottle, and the air curtain gas delivery device is an air curtain gas delivery pipeline. The air curtain gas delivery pipeline is connected to the air curtain air supply bottle through a third air supply pipeline, and a third regulating valve is arranged on the third air supply pipeline; a plurality of third gas delivery ports are arranged on the air curtain gas delivery pipeline, which are used to deliver the gas source provided by the air curtain gas supply bottle to adjacent reaction areas via the air curtain gas delivery pipeline to act as a gas curtain; the gas source delivered by the air curtain gas delivery pipeline is nitrogen.

[0112] A one-way conveyor belt is provided with a carrier for carrying the substrate to be coated. The substrate to be coated passes through each reaction area in sequence under the drive of the one-way conveyor belt; a heating element is provided on the carrier, located below the substrate to be coated, for heating the substrate to be coated.

[0113] This embodiment also provides a coating method, which uses the above-mentioned spatial ALD coating device to perform coating, including the following steps:

[0114] (1) The carrier carrying the substrate to be coated is driven by a one-way conveyor belt and transported to the first group of reaction areas. It enters the first precursor reaction area through a nitrogen gas curtain to deposit DADI. Then, it enters the first co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the first co-reactant reaction area reacts with the deposited DADI to form an InO film layer. Then, it passes through a nitrogen gas curtain to complete an atomic layer deposition process.

[0115] (2) The carrier carrying the substrate to be coated is transferred to the second group of reaction areas, DADI is deposited in the second precursor reaction area, and then enters the second co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the second co-reactant reaction area reacts with the deposited DADI to form an InO film layer, and then passes through a nitrogen gas curtain to complete an atomic layer deposition process.

[0116] (3) The carrier carrying the substrate to be coated is transferred to the third group of reaction areas, TMGa is deposited in the third precursor reaction area, and then enters the third co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the third co-reactant reaction area reacts with the deposited TMGa to form a GaO film layer, and then passes through a nitrogen gas curtain to complete an atomic layer deposition process.

[0117] (4) The carrier carrying the substrate to be coated is transferred to the fourth group of reaction areas, DEZ is deposited in the fourth precursor reaction area, and then enters the fourth co-reactant reaction area through a nitrogen gas curtain, so that the plasma oxygen entering the fourth co-reactant reaction area reacts with the deposited DEZ to form a ZnO film layer, and then passes through the nitrogen gas curtain to complete an atomic layer deposition process to obtain an IGZO film with a ratio of InO:GaO:ZnO=2:1:1.

[0118] (5) Repeat steps (1) to (4) multiple times until an IGZO film of desired thickness is obtained.

[0119] Example 3

[0120] The difference between this embodiment and Embodiment 1 is that the coating chamber includes four groups of reaction areas connected in sequence, and the carrier carrying the substrate to be coated deposits DADI in the first precursor reaction area of ​​the first group of reaction areas, deposits DEZ in the second precursor reaction area of ​​the second group of reaction areas, deposits DEZ in the third precursor reaction area of ​​the third group of reaction areas, and deposits TMGa in the fourth precursor reaction area of ​​the fourth group of reaction areas, to produce an IGZO film with a ratio of InO:GaO:ZnO=1:2:1.

[0121] The rest of the device structure and preparation method remain the same as in Example 1.

[0122] Example 4

[0123] The difference between this embodiment and embodiment 2 is that the one-way transmission belt is replaced by a reciprocating transmission belt, and after performing steps (1) to (4), the carrier is first returned. During the return process, the substrate to be coated is adjusted to deposit DEZ in the first precursor reaction area, TMGa in the second precursor reaction area, DADI in the third precursor reaction area, and DADI in the fourth precursor reaction area, thereby stacking a layer of IGZO film with a ratio of InO:GaO:ZnO=2:1:1, and then repeating the above steps until an IGZO film of a desired thickness is obtained.

[0124] The rest of the device structure and preparation method remain the same as in Example 2.

[0125] It should be noted that the structure of the composite film is not limited to all composite films being composed of composite films of a fixed ratio. For example, the first cycle may select InO:GaO:ZnO=2:1:1, and the second cycle may select InO:GaO:ZnO=1:2:1, until a film layer of a desired thickness is generated.

[0126] In particular, the spatial ALD coating device provided by the present invention can be set to allow different reaction areas to be introduced with any type of chemical source, and can also be set to use chemical sources of different ratios in different numbers of cycles, so as to complete adjustments of different proportions and different orders, thereby greatly improving the flexibility of spatial ALD process adjustment, and at the same time improving the film formation efficiency, greatly improving the process adjustability of spatial ALD.

[0127] In summary, the spatial ALD coating device provided by the present invention has the characteristics of high spatial ALD film forming efficiency, and because the chemical sources in each reaction area can be adjusted as needed, it has the advantages of high process adjustability and great process compatibility.

[0128] The applicant declares that the present invention illustrates the process method of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned process steps, that is, it does not mean that the present invention must rely on the above-mentioned process steps to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A spatial ALD coating device, characterized in that: The spatial ALD coating device comprises: A coating chamber, the coating chamber comprising at least one group of reaction areas connected in sequence, and adjacent reaction areas are isolated by air curtains; each group of reaction areas is composed of a precursor reaction area and a co-reactant reaction area separated by the air curtains, and is used for depositing a film layer; An air inlet assembly, the air inlet assembly comprising a precursor source air inlet member, a co-reactant source air inlet member and an air curtain supply member; The precursor source gas inlet component includes a precursor source gas supply device and a precursor source gas delivery device, and the precursor source gas delivery device is provided with a first gas delivery port for delivering the precursor source provided by the precursor source gas supply device to the precursor reaction area by means of the precursor source gas delivery device; the co-reactant source gas inlet component includes a co-reactant source gas supply device and a co-reactant source gas delivery device, and the co-reactant source gas delivery device is provided with a second gas delivery port for delivering the co-reactant source provided by the co-reactant source gas supply device to the co-reactant reaction area by means of the co-reactant source gas delivery device; the air curtain supply component includes an air curtain gas supply device and an air curtain gas delivery device, and the air curtain gas delivery device is provided with a third gas delivery port for delivering the gas source provided by the air curtain gas supply device to adjacent reaction areas by means of the air curtain gas delivery device to act as a gas air curtain; A conveying mechanism is provided with a carrier for carrying the substrate to be coated. The substrate to be coated passes through each group of reaction areas in sequence under the drive of the conveying mechanism.

2. The spatial ALD coating device according to claim 1, characterized in that: The precursor source gas delivery device is connected to the precursor source gas supply device through a first gas supply pipeline, and a first regulating valve is provided on the first gas supply pipeline; The co-reactant source gas delivery device is connected to the co-reactant source gas supply device via a second gas supply pipeline, and a second regulating valve is provided on the second gas supply pipeline; The air curtain gas delivery device is connected to the air curtain gas supply device through a third gas supply pipeline, and a third regulating valve is arranged on the third gas supply pipeline.

3. The spatial ALD coating device according to claim 1, characterized in that: The first gas delivery port delivers the precursor source to the precursor reaction area through a first gas delivery pipeline, and a fourth regulating valve is provided on the first gas delivery pipeline; The second gas delivery port delivers the co-reactant source to the co-reactant reaction area through a second gas delivery pipeline, and a fifth regulating valve is arranged on the second gas delivery pipeline.

4. The spatial ALD coating device according to claim 1, characterized in that: The precursor source includes at least one of an In source, a Ga source, a Zn source, a Ti source, an Al source and a Si source; And / or, the number of the first gas delivery port on the precursor source gas delivery device is at least one, and each of the first gas delivery ports is connected to the precursor reaction area in each group of the reaction areas.

5. The spatial ALD coating device according to claim 1, characterized in that: The number of the second gas delivery port on the co-reactant source gas delivery device is at least one, and each of the second gas delivery ports is connected to the co-reactant reaction region in each group of the reaction regions; And / or, the co-reactant source includes any one of an oxygen source, ammonia or H2O, or a combination of at least two thereof; And / or, the gas source provided by the air curtain gas supply device includes nitrogen or argon.

6. The spatial ALD coating device according to claim 1, characterized in that: A heating element is disposed on the carrier and is located below the substrate to be coated, and is used for heating the substrate to be coated.

7. The spatial ALD coating device according to claim 1, characterized in that: The spatial ALD coating device is a rotary structure or a linear structure; And / or, the conveying mechanism is a one-way conveying mechanism or a reciprocating conveying mechanism.

8. A coating method, characterized in that: The coating method adopts the spatial ALD coating device according to any one of claims 1 to 7 to perform coating, comprising the following steps: (1) The carrier carrying the substrate to be coated is transferred to the first group of reaction areas, and passes through the gas curtain, precursor reaction area, gas curtain, co-reactant reaction area and gas curtain in sequence to perform an atomic layer deposition process; (2) According to the deposition process of step (1), the atomic layer deposition process is carried out in sequence and group by group to obtain the desired composite film.

9. The coating method according to claim 8, characterized in that: The coating method comprises the following steps: (1) The carrier carrying the substrate to be coated is driven by the conveying mechanism to be conveyed to the first group of reaction areas, enters the precursor reaction area through the gas curtain, deposits the precursor material, and then enters the co-reactant reaction area through the gas curtain, so that the co-reactant source entering the co-reactant reaction area reacts with the deposited precursor material to form a film layer, and then passes through the gas curtain to complete an atomic layer deposition process; (2) According to the atomic layer deposition process described in step (1), the carrier carrying the substrate to be coated passes through the remaining groups of reaction areas in sequence to obtain a composite film with the required ratio.

10. A composite membrane, characterized in that The composite film is obtained by the coating method as claimed in claim 8 or 9; The composite film includes any one of an IGZO film, an AZO film or a TSO film.

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