Read-write driver circuit based on temperature sensing and control method thereof

Abstract

The invention discloses a read-write driver circuit based on temperature sensing and a control method thereof, and the method comprises the steps: carrying out the quantification and coding of an obtained temperature signal, and obtaining temperature coding information; receiving test data and acquiring corresponding check coding information; voltage and pulse parameters corresponding to the current temperature coding information are determined according to the temperature coding-voltage-pulse initial corresponding relation; writing test data into a memory according to the determined voltage and pulse parameters; performing verification detection on the test data according to the verification coding information; if the detection is wrong, the test data is repeatedly written until the detection is accurate after the corresponding relation is adjusted according to the setting; and updating the corresponding relation between the current temperature code and the voltage and pulse parameters according to the finally determined voltage and pulse parameters. According to the scheme, the read-write parameters of the memories of the same batch and the same model at different temperatures are obtained through the preset corresponding relation table and real-time test adjustment, and excellent read-write performance is achieved on the premise that low power consumption and long service life are guaranteed.

Description

Technical Field

[0001] The present invention belongs to the technical field of ferroelectric sensor control, and in particular relates to a read-write driver circuit based on temperature perception and a control method thereof. Background Art

[0002] FeCAP is a special capacitor that can be used to build non-volatile memory FeRAM based on the properties of ferroelectric materials. A key feature of ferroelectric materials is their ability to spontaneously polarize, which means that the material can maintain its polarization state even after the external electric field is removed. This property enables FeCAP to save data without power, making it very suitable for building non-volatile memory.

[0003] The temperature characteristics of FeCAP ferroelectric capacitors are one of the important factors affecting the reliability and performance of FeRAM ferroelectric random access memory. The temperature characteristics of FeCAP are mainly reflected in the fact that the polarization value Pr in FeCAP changes with temperature. When the temperature is out of the optimal temperature, the polarization value may decrease as the distance from the optimal temperature increases, which will affect the state switching ability of FeCAP, thereby easily causing the read and write ability of ferroelectric memory.

[0004] Therefore, the design of FeCAP needs to take temperature stability into consideration to ensure that the performance of FeCAP remains consistent at different temperatures.

[0005] In order to solve the problem of the influence of temperature on the performance of ferroelectric memory, people have conducted long-term exploration. For example, a Chinese patent discloses an analog ferroelectric memory with an improved temperature range [application number: 201780052709.8]. This method avoids the influence of temperature on the performance of ferroelectric memory by limiting the temperature change rate, such as using a thermal package, increasing thermal mass, designing a suitable RC time constant, charge normalization, etc. It mainly reduces the interference of temperature changes on stored data by limiting the temperature change rate. It is a passive way to maintain good performance in a wide temperature range, and the actual use effect is not good. Summary of the invention

[0006] The purpose of the present invention is to provide a read-write driver circuit based on temperature sensing in order to solve the above problems;

[0007] Another object of the present invention is to provide a read-write driver circuit control method based on temperature perception.

[0008] In order to achieve the above object, the present invention adopts the following technical solutions:

[0009] A method for controlling a read / write driver circuit based on temperature sensing, comprising:

[0010] Get temperature signal;

[0011] Quantifying and encoding the temperature signal according to the temperature range to which it belongs to obtain temperature encoding information;

[0012] Receive test data and obtain verification code information of the test data;

[0013] Determine the voltage and pulse parameters corresponding to the current temperature coding information according to the initial corresponding relationship between temperature coding, voltage and pulse;

[0014] Writing test data into the memory with the determined voltage and pulse parameters;

[0015] Perform verification and detection on the written test data according to the verification code information;

[0016] If the detection is wrong, adjust the corresponding relationship between the current temperature code and the voltage and pulse parameters according to the setting method and repeatedly write the test data until the detection is accurate;

[0017] The corresponding relationship between the current temperature encoding and the voltage and pulse parameters is updated according to the finally determined voltage and pulse parameters.

[0018] In the above-mentioned read-write driver circuit control method based on temperature perception, the method further includes:

[0019] The ambient temperature is changed, and the above method is executed under different ambient temperatures to update the corresponding relationship between each temperature and the voltage and pulse parameters.

[0020] In the above-mentioned temperature-aware read-write driver circuit control method, the above-mentioned method is performed on a sampling of memories of the same batch and model to be shipped out of the factory, and the temperature range corresponding to each temperature code is fully tested at least once by at least one memory to obtain a temperature coding-voltage-pulse correspondence table of the corresponding batch model memory. The temperature coding-voltage-pulse correspondence table contains voltage and pulse parameters corresponding to all temperature codes that have been tested and confirmed. At one temperature, testing until no errors occur in the detection is considered a complete test.

[0021] Store the temperature coding-voltage-pulse correspondence table in the memory of the corresponding batch model. When writing data to the memory:

[0022] Get temperature signal;

[0023] Obtain corresponding temperature coding information according to the temperature signal;

[0024] Extracting corresponding voltage and pulse parameters from a temperature coding-voltage-pulse correspondence table according to the temperature coding information;

[0025] Write data to the memory with the extracted voltage and pulse parameters.

[0026] In the above-mentioned read-write driver circuit control method based on temperature perception, for each temperature range corresponding to the temperature code, at least two temperatures are selected, and the above-mentioned method is performed under the at least two temperature environments respectively to obtain at least two groups of finally determined voltage and pulse parameters corresponding to the current temperature range;

[0027] In at least two groups of voltage and pulse parameters, the voltage average value, the pulse amplitude average value, and the pulse width average value are respectively taken as the voltage parameter and pulse parameter corresponding to the corresponding temperature encoding.

[0028] In the above-mentioned read-write driver circuit control method based on temperature perception, the method further includes:

[0029] Perform read and write tests on samples of the same batch and model of memory to be shipped out of the factory, and perform the above method at different stages of the entire life cycle of the memory;

[0030] Obtain a temperature coding-voltage-pulse correspondence table at different stages of the entire life cycle of the memory;

[0031] A plurality of temperature coding-voltage-pulse correspondence tables are stored in respective memories of corresponding batch models, and the current stage is used as a trigger condition for enabling the corresponding relationship table.

[0032] In the above-mentioned read-write driver circuit control method based on temperature perception, the setting method is:

[0033] The voltage V1 in the initial corresponding relationship between temperature coding, voltage and pulse is taken as the initial voltage, the pulse amplitude VP1 is taken as the initial pulse amplitude, and the pulse width PW1 is taken as the initial pulse width. Each time an error is detected, the voltage is increased by an increase of V2, the pulse amplitude is increased by an increase of VP2, and the pulse width is increased by an increase of PW2 until the detection is accurate.

[0034] ((V3-V1) / 10)-0.002V≤V2≤((V3-V1) / 10)+0.002V, V3 is the preset maximum voltage value;

[0035] ((VP3-VP1) / 10)-0.02V≤VP2≤(VP3-VP1 / 10)+0.02V, VP3 is the preset maximum pulse amplitude;

[0036] ((PW3-PW2) / 10)-2ns≤PW2≤((PW3-PW2) / 10)+2ns, where PW3 is the preset maximum pulse width.

[0037] In the above-mentioned temperature-aware read / write driver circuit control method, the operating temperature range of the storage circuit is divided into several temperature intervals, and each temperature interval is defined corresponding to a corresponding temperature code;

[0038] Determine the temperature interval to which the temperature signal belongs according to the temperature value corresponding to the temperature signal so as to quantify the temperature signal;

[0039] Determine the temperature code according to the temperature interval corresponding to the temperature signal to encode the temperature signal and obtain temperature code information;

[0040] The temperature encoding-voltage-pulse correspondence table of the write operation is determined by the method described in claim 1;

[0041] The read operation and the write operation have the same temperature encoding-voltage-pulse correspondence table;

[0042] Alternatively, the read operation has a fixed read voltage and read pulse amplitude and read pulse width;

[0043] Alternatively, the memory has a temperature coding-voltage-pulse initial correspondence corresponding to a read operation and a temperature coding-voltage-pulse initial correspondence corresponding to a write operation. During the read and write test process, if an error is detected, the correspondence between the current temperature coding and the voltage and pulse parameters of the read operation and the correspondence between the current temperature coding and the voltage and pulse parameters of the write operation are adjusted respectively, and then the test data is repeatedly written until the detection is accurate.

[0044] In the above-mentioned read-write driver circuit control method based on temperature perception, the temperature signal is obtained by a semiconductor temperature sensor, and the semiconductor temperature sensor outputs different temperature signals according to different ambient temperatures;

[0045] Acquire temperature coding information according to the relationship between the preset temperature signal and the temperature value;

[0046] The test data is encoded using a verification encoder to obtain the verification code information;

[0047] Verify and detect the written test data through the verification decoder;

[0048] And the check encoder is an ECC, LDPC or CRC encoder; the check decoder is an ECC, LDPC or CRC decoder.

[0049] A read-write driver circuit based on temperature perception includes a temperature sensor, a storage array and a control module;

[0050] The temperature sensor is used to obtain a temperature signal;

[0051] The storage array has a first fixed storage area for storing a temperature coding-voltage-pulse correspondence table; a correspondence table between temperature signals and temperature coding information can also be stored in the first fixed storage area.

[0052] The control module is connected to the storage array, and is used to determine the temperature coding information according to the temperature signal, and then extract the corresponding voltage and pulse parameters according to the temperature coding-voltage-pulse correspondence table in the storage array, and write data to the memory with the extracted voltage and pulse parameters;

[0053] The control module is also used to connect the verification encoder and the verification decoder. The verification encoder is used to encode the test data and obtain the verification code information. The verification decoder is used to verify and detect the written test data. If an error is detected, the corresponding relationship between the current temperature code and the voltage and pulse parameters is adjusted according to the set method, and the test data is repeatedly written until the detection is accurate, so as to update the temperature code-voltage-pulse correspondence table for the memory through the write test at each temperature.

[0054] In the above-mentioned read-write driver circuit based on temperature perception, the storage array stores a plurality of temperature coding-voltage-pulse correspondence tables and corresponding enabling trigger conditions;

[0055] The activation trigger condition is the stage of the memory with respect to the life cycle;

[0056] The storage array has a second fixed storage area for storing the current stage information of the memory and the triggering relationship between different stages and the corresponding relationship table; specifically, the different stages of the life cycle are represented by the accumulated reading and writing times of the memory.

[0057] The control module enables the corresponding temperature coding-voltage-pulse correspondence table according to the current stage, and when data needs to be written, extracts the corresponding voltage and pulse parameters from the enabled temperature coding-voltage-pulse correspondence table according to the currently determined temperature coding information, and writes the data to the memory with the extracted voltage and pulse parameters;

[0058] The temperature coding-voltage-pulse correspondence table is a correspondence table for write operations;

[0059] The read operation and the write operation have the same temperature encoding-voltage-pulse correspondence table;

[0060] Alternatively, the read operation has a fixed read voltage and read pulse amplitude and read pulse width;

[0061] Alternatively, the first fixed storage area of ​​the memory stores a temperature coding-voltage-pulse correspondence table for a read operation and a temperature coding-voltage-pulse correspondence table for a write operation respectively;

[0062] The temperature sensor is a semiconductor temperature sensor;

[0063] The semiconductor temperature sensor is a thermistor, a PN junction temperature sensor or an integrated temperature sensor.

[0064] The advantages of the present invention are:

[0065] 1. This solution ensures good performance of the memory at different temperatures by real-time temperature monitoring and adjusting read and write parameters, thereby improving the reliability of the FeCAP memory;

[0066] 2. This solution obtains the read and write parameters of the same batch and model of FeCAP memory at different temperatures through a pre-set correspondence table and real-time adjustment of the test, ensuring the read and write performance of the memory at lower voltage, pulse amplitude and pulse width, that is, achieving excellent read and write performance under the premise of low power consumption and long life;

[0067] 3. This solution obtains the relationship table of the corresponding memory through sampling test before the memory of the same batch and model leaves the factory, and imports the relationship table obtained from the test into all the memories of the same model in the same batch. The memories of the same model in the same batch usually have similar characteristics. In this way, the relationship table of each memory can be ensured to be more accurate while ensuring efficiency, thereby improving the reliability of each FeCAP memory;

[0068] 4. When the user uses the memory, the solution only needs to access the relationship table to quickly extract the corresponding read and write parameters. This relationship table is determined by testing in advance and is relatively accurate. Therefore, it can ensure the performance reliability of the FeCAP memory under various temperature environments while almost not affecting the response speed at the user end.

[0069] 5. This solution has designed in advance multiple correspondence tables that are triggered and enabled by the number of read and write times representing different stages of the life cycle, which can adapt to the performance changes of the storage at different stages of the entire life cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] Figure 1 1 is a principle block diagram of a read / write driver circuit based on temperature sensing in Embodiment 1 of the present invention;

[0071] Figure 2 This is a flow chart of a method for controlling a read / write driver circuit based on temperature perception in Embodiment 1 of the present invention;

[0072] Figure 3It is a flow chart of a method for determining a temperature coding-voltage-pulse correspondence table of each memory in a temperature sensing-based read-write driver circuit control method in Embodiment 1 of the present invention;

[0073] Figure 4 The flow chart of the control method of the read-write driver circuit based on temperature perception in the first embodiment of the present invention is as follows: Figure 2 ;

[0074] Figure 5 This is a schematic diagram of a memory in a temperature-aware read / write driver circuit control method according to Embodiment 1 of the present invention for maintaining stable performance at various temperatures;

[0075] Figure 6 4 is a principle block diagram of a read-write driver circuit based on temperature perception in Embodiment 4 of the present invention;

[0076] Figure 7 This is a flow chart of a method for confirming a temperature coding-voltage-pulse correspondence table for a memory in Embodiment 4 of the present invention.

[0077] Reference numerals: temperature sensor 1; storage array 2; control module 3; check encoder 4; check decoder 5. DETAILED DESCRIPTION

[0078] This solution provides a read-write driver circuit and a write driver circuit control method based on temperature perception. The temperature range is encoded according to the specific temperature changes, and then the read-write voltage and read-write pulse signal are programmed and processed. Combined with the verification coding information, the problem that the FeCAP memory circuit cannot read and write stably and effectively under different temperature conditions can be solved.

[0079] Embodiment 1

[0080] like Figure 1 As shown, this embodiment discloses a read-write driver circuit based on temperature perception, including a temperature sensor 1, a storage array 2 and a control module 3;

[0081] The temperature sensor 1 is used to obtain a temperature signal;

[0082] The storage array 2 has a first fixed storage area for storing a temperature coding-voltage-pulse correspondence table;

[0083] The control module 3 is connected to the storage array 2, and is used to determine the temperature coding information according to the temperature signal, and then extract the corresponding voltage and pulse parameters according to the temperature coding-voltage-pulse correspondence table in the storage array 2, and write data to the memory with the extracted voltage and pulse parameters. The voltage here mainly refers to the write operation voltage, and the pulse parameters refer to the pulse width and pulse amplitude.

[0084] The operating temperature range of the memory is divided into several temperature intervals, each temperature interval is defined corresponding to the corresponding temperature code, taking the ferroelectric memory with an operating temperature between -40°C and 85°C as an example, as shown in Table 1 below:

[0085] Table 1 Temperature range corresponding to temperature coding table

[0086] Temperature range ℃ Temperature coding ＜-20 00000 -20～0 0000X 0～20 000XX 20～40 00XXX 40～60 0XXXX More than 60 XXXXX

[0087] By quantizing and encoding in temperature intervals, the complexity of the entire relationship between temperature measurement and operation control can be simplified, and the sensitivity to temperature changes can be reduced to maintain the stability of memory operation control within a certain temperature range.

[0088] Specifically, the temperature interval to which the temperature signal belongs is determined according to the temperature value corresponding to the temperature signal to quantize the temperature signal, and the temperature code is determined according to the temperature interval corresponding to the temperature signal to encode the temperature signal and obtain temperature code information.

[0089] The temperature sensor 1 here is a semiconductor temperature sensor 1. The temperature signal is not a specific temperature value, but an output data of a semiconductor temperature sensor 1. However, the specific value of this output data is related to the temperature. The semiconductor temperature sensor 1 can be a thermistor, a PN junction temperature sensor 1, or an integrated temperature sensor 1 such as LM35 or DS18B2. For a certain semiconductor temperature sensor 1, its output data will have a corresponding temperature value. Therefore, the current temperature of the memory can be confirmed based on the output data of the semiconductor temperature sensor 1, and then the corresponding temperature coding information can be determined, so that the control module can determine the specific voltage and pulse parameters based on the temperature coding.

[0090] In addition, the control module 3 is also used to connect the check encoder 4 and the check decoder 5. The check encoder 4 is used to encode the test data to obtain the check encoding information. The check decoder 5 is used to check and detect the written test data. The check encoder 4 is an ECC, LDPC or CRC encoder; the check decoder 5 is an ECC, LDPC or CRC decoder. In this embodiment, the check encoder 4 and the check decoder 5 can be integrated inside the memory chip or outside the memory chip. When the corresponding relationship needs to be adjusted, a device with the check encoder 4 and the check decoder 5 is used to connect the memory chip to check and correct the memory.

[0091] If the detection is wrong, the corresponding relationship between the current temperature code and the voltage and pulse parameters is adjusted according to the setting method, and the test data is repeatedly written until the detection is accurate, so as to update the temperature code-voltage-pulse corresponding relationship table for the memory through the write test at each temperature.

[0092] The relationship between temperature, voltage and pulse can be pre-confirmed for the memory through experience, and then the voltage and pulse parameters in each temperature environment can be finely adjusted based on the pre-confirmed relationship through read and write tests, so as to confirm the precise correspondence between each temperature code and voltage and pulse for the memory. In this way, when it is put into use, it is only necessary to access the correspondence table that has been tested and adjusted in advance to select the corresponding voltage and pulse to ensure the high read and write performance of the memory at each temperature.

[0093] like Figure 2 As shown, the working process of the read-write driver circuit based on temperature perception is described in detail below through a read-write driver circuit control method based on temperature perception:

[0094] Get temperature signal;

[0095] Quantifying and encoding the temperature signal according to the temperature range to which it belongs to obtain temperature encoding information;

[0096] Receive test data and obtain the verification code information of the test data; for example, when the temperature is 25 degrees, the code 00XXX will be obtained.

[0097] Determine the voltage and pulse parameters corresponding to the current temperature coding information according to the initial corresponding relationship between temperature coding, voltage and pulse;

[0098] Writing test data into the memory with the determined voltage and pulse parameters;

[0099] Perform verification and detection on the written test data according to the verification code information;

[0100] If the detection is wrong, adjust the corresponding relationship between the current temperature code and the voltage and pulse parameters according to the setting method and repeatedly write the test data until the detection is accurate;

[0101] The corresponding relationship between the current temperature encoding and the voltage and pulse parameters is updated according to the finally determined voltage and pulse parameters.

[0102] In this embodiment, the read operation and the write operation have the same temperature encoding-voltage-pulse correspondence table.

[0103] Still taking the ferroelectric memory with an operating temperature between -40°C and 85°C as an example, the temperature encoding-voltage-pulse initial correspondence relationship can be shown in Table 2:

[0104] Table 2 Temperature coding-voltage-pulse initial correspondence

[0105] Temperature coding Voltage parameter V Pulse width ns Pulse amplitude V 00000 1.71 100 3 0000X 1.71 100 3 000XX 1.71 100 3 00XXX 1.71 100 3 0XXXX 1.71 100 3 XXXXX 1.71 100 3

[0106] A lower operating voltage is beneficial for reducing power consumption, but the voltage must be high enough to achieve reliable polarization reversal. At the same time, an operating voltage that is too high will cause the ferroelectric material of the ferroelectric memory to fatigue faster, resulting in a significant reduction in service life. Therefore, for the same type of ferroelectric memory, there will be a roughly suitable voltage range, such as 1.71V to 1.89V. This voltage range can be specifically determined by technical personnel in this field based on experience.

[0107] Similarly, the pulse amplitude needs to be large enough to ensure that the polarization state of the ferroelectric material can be reliably changed, but at the same time, a pulse amplitude that is too large may cause the write operation to be too aggressive and cause write errors. Therefore, the pulse amplitude also has a roughly appropriate amplitude range, such as 3V to 5V. This amplitude range can be specifically determined by technical personnel in this field based on experience.

[0108] Similarly, the pulse width determines the length of time that the voltage acts on the ferroelectric material. A pulse that is too short may not achieve a stable change in polarization state, while a pulse that is too long will cause unnecessary energy consumption and thermal effects. Therefore, the pulse width also has a roughly appropriate width range, such as 100ns to 1us, and this width range can also be determined by those skilled in the art based on experience.

[0109] For the initial correspondence between temperature coding, voltage and pulse, this embodiment preferably uniformly takes the lowest voltage, the lowest pulse width and the lowest pulse amplitude in the voltage range, amplitude range and width range as the basis, as shown in Table 2.

[0110] According to the setting method, the corresponding relationship between the current temperature code and the voltage and pulse parameters is adjusted as follows:

[0111] The voltage V1 in the initial correspondence between temperature coding, voltage and pulse is used as the initial voltage, the pulse amplitude VP1 is used as the initial pulse amplitude, and the pulse width PW1 is used as the initial pulse width. Each time an error is detected, the voltage is increased by the increase of V2, the pulse amplitude is increased by the increase of VP2, and the pulse width is increased by the increase of PW2 until the detection is accurate. For each temperature range, a suitable voltage and pulse combination is generally found within the range. If the detection is still unqualified even after the maximum voltage, pulse amplitude and pulse width are reached, there may be a problem with the test memory itself, or there may be other problems. This situation is not considered in this solution and will not be elaborated here.

[0112] in,

[0113] ((V3-V1) / 10)-0.002V≤V2≤((V3-V1) / 10)+0.002V, V3 is the preset maximum voltage value;

[0114] ((VP3-VP1) / 10)-0.02V≤VP2≤(VP3-VP1 / 10)+0.02V, VP3 is the preset maximum pulse amplitude;

[0116] ((PW3-PW2) / 10)-2ns≤PW2≤((PW3-PW2) / 10)+2ns, where PW3 is the preset maximum pulse width.

[0117] Specifically, in the example of Table 2 above, the initial voltage value is 1.71, the initial pulse width value is 100ns, and the initial pulse amplitude value V is 3V. The memory is tested at different temperature ranges. For example, if the memory is tested at 10°C, if the test is qualified, the voltage and pulse parameters corresponding to 000XX remain unchanged. If the test is unqualified, the voltage parameter is increased by 0.018V, the pulse width is increased by 9ns, and the pulse amplitude is increased by 0.2V to adjust the corresponding relationship between temperature coding, voltage, and pulse until the test is qualified.

[0118] Specifically, Figure 3 and Figure 4 As shown, this scheme performs the above method on the same batch and same model memory samples to be shipped, and the temperature interval corresponding to each temperature code is tested at least once by at least one memory to obtain the temperature code-voltage-pulse correspondence table of the corresponding batch model memory. Specifically, any multiple memories are sampled for testing, and each tested memory will obtain at least one correspondence between temperature code and voltage and pulse parameters based on at least one different temperature test. During the test, for a memory, it is not necessary to test in each temperature interval. For example, one of the memories can be tested when it is less than 20 degrees, and another memory can be tested when it is in the range of -20 to 0 degrees. In this way, as long as at least one memory is tested in each temperature interval, the voltage and pulse parameters corresponding to this temperature interval can be obtained. Remove obviously inaccurate data, and then integrate all test data. If there is only one set of voltage and pulse parameters in a temperature interval, it can be directly taken. If there are multiple sets of voltage and pulse parameters in a temperature interval, the voltage and pulse parameters of the temperature interval are selected by the average value, and finally the correspondence table of the batch model memory will be obtained. Subsequently, the temperature coding-voltage-pulse correspondence table is stored in all memories of the corresponding batch model.

[0119] like Figure 5 As shown in the figure, when the user uses a certain storage data of the aforementioned batch model and needs to store data into it:

[0120] Temperature sensor 1 will obtain the temperature signal;

[0121] The control module 3 of the memory obtains the corresponding temperature coding information according to the temperature signal, extracts the corresponding voltage and pulse parameters from the temperature coding-voltage-pulse correspondence table according to the temperature coding information, and finally writes data to the memory with the extracted voltage and pulse parameters.

[0122] When it is put into use, users can also use Figure 4 The method uses the previously updated temperature coding-voltage-pulse correspondence table as the initial correspondence to perform read and write tests on the memory again to readjust the relationship between voltage and pulse in various temperature ranges.

[0123] Preferably, for each temperature range corresponding to the temperature code, at least two temperatures are selected, and read and write tests are performed under the at least two temperature environments to obtain at least two groups of finally determined voltage and pulse parameters corresponding to the current temperature range.

[0124] Table 3 Two test temperatures are selected in each temperature range

[0125]

[0126] In at least two groups of voltage and pulse parameters, the voltage average value, the pulse amplitude average value, and the pulse width average value are respectively taken as the voltage parameter and pulse parameter corresponding to the corresponding temperature encoding.

[0127] Embodiment 2

[0128] This embodiment is similar to the first embodiment, except that the read operation of this embodiment has a fixed read voltage, read pulse amplitude and read pulse width, and the specific values ​​are determined by those skilled in the art based on experience. That is, as the temperature changes, the voltage value, pulse amplitude and pulse width of the read operation are consistent and unchanged. The voltage value, pulse amplitude and pulse width of the write operation are determined according to the corresponding relationship table determined by the first embodiment.

[0129] Embodiment 3

[0130] This embodiment is similar to the first embodiment, except that the memory of this embodiment has a temperature coding-voltage-pulse initial correspondence corresponding to the read operation and a temperature coding-voltage-pulse initial correspondence corresponding to the write operation. During the read and write test, if an error is detected, the corresponding relationship between the current temperature coding and the voltage and pulse parameters of the read operation and the corresponding relationship between the current temperature coding and the voltage and pulse parameters of the write operation are adjusted respectively, and then the test data is repeatedly written until the detection is accurate. The adjustment rules of the two relationship tables can be the same, that is, they are adjusted according to the setting method, but the initial voltage and voltage range, initial pulse amplitude and pulse amplitude range, initial pulse width and pulse width range of the two are different, and are determined according to experience.

[0131] Finally, the first fixed storage area of ​​the memory stores a temperature coding-voltage-pulse correspondence table for a read operation and a temperature coding-voltage-pulse correspondence table for a write operation. When performing a read operation, the corresponding voltage and pulse parameters are extracted according to the temperature coding-voltage-pulse correspondence table for the read operation. When performing a write operation, the corresponding voltage and pulse parameters are extracted according to the temperature coding-voltage-pulse correspondence table for the write operation.

[0132] Embodiment 4

[0133] like Figure 6 As shown, this embodiment is similar to the first embodiment, except that, in this embodiment, the first fixed storage area of ​​the storage array 2 stores a plurality of temperature coding-voltage-pulse correspondence tables and corresponding enabling trigger conditions, and the enabling trigger conditions are the stages of the life cycle of the memory. In this embodiment, the different stages of the life cycle are represented by the cumulative read and write times of the memory. Correspondingly, the storage array 2 has a second fixed storage area for storing the cumulative read and write times of the memory and the trigger relationship between the cumulative read and write times and the corresponding relationship table. For example, if there are 5 relationship tables stored in the memory, the cumulative read and write times in the range of 0-10w times are the first stage, corresponding to the first relationship table, the range of 10w-30w times are the second stage, corresponding to the second relationship table, the range of 30w-60w times are the third stage, corresponding to the third relationship table, 60w-100w are the fourth stage, corresponding to the fourth relationship table, and more than 100w are the fifth stage, corresponding to the fifth relationship table.

[0134] The control module 3 enables the corresponding temperature coding-voltage-pulse correspondence table according to the current cumulative number of read and write times. For example, if the cumulative number of read and write times has reached 60w in a certain write operation, the fourth relationship table will be enabled and the first three will be abandoned until the number of read and write times reaches 100w times, and then it will be replaced with the fifth relationship table, and the fifth relationship table will be used thereafter.

[0135] When data needs to be written, the corresponding voltage and pulse parameters are extracted from the enabled temperature coding-voltage-pulse correspondence table according to the currently determined temperature coding information, and the data is written to the memory with the extracted voltage and pulse parameters.

[0136] Correspondingly, if Figure 7 As shown, in this embodiment, the method further includes:

[0137] The same batch and the same model of memory samples to be shipped are sampled for read and write tests, and the test process described in the embodiment is performed at different stages, specifically, the test process described in embodiment one is performed every set number of read and write times to obtain the temperature coding-voltage-pulse correspondence table at different stages in the entire life cycle of the memory. For example, at the beginning of the test, the voltage and pulse parameters corresponding to each temperature interval range are obtained by the method described in embodiment one, that is, the first relationship table is obtained. Then, after 10w read and write tests, the voltage and pulse parameters corresponding to each temperature interval range are obtained again by the method described in embodiment one, that is, the second relationship table is obtained. Similarly, the third, fourth and fifth relationship tables are obtained for 30w, 60w and 100w read and write tests, respectively. In this way, the relationship tables at different stages in the entire life cycle can be obtained, thereby effectively improving the adjustment relationship between temperature, voltage and pulse, and overcoming the influence of the degradation of device characteristics on the read and write performance after the memory has been working for a period of time.

[0138] Finally, multiple temperature coding-voltage-pulse correspondence tables and their correspondence with the cumulative number of read and write times are stored in each memory of the corresponding batch model, and the cumulative number of read and write times is used as the activation trigger condition of the corresponding relationship table, so that the read and write parameters of the memory can adapt to the performance changes at different stages of the entire life cycle.

[0139] The specific embodiments described herein are merely examples of the spirit of the present invention. Those skilled in the art may make various modifications or additions to the specific embodiments described or replace them in similar ways, but they will not deviate from the spirit of the present invention or exceed the scope defined by the appended claims.

[0140] Although the terminology such as temperature sensor 1, storage array 2, control module 3, check encoder 4, check decoder 5 is used more frequently in this article, the possibility of using other terms is not excluded. The use of these terms is only for more convenient description and explanation of the essence of the present invention; interpreting them as any additional limitation is contrary to the spirit of the present invention.

Claims

1. A read-write driver circuit control method based on temperature perception, characterized in that: The method includes: Get temperature signal; Quantifying and encoding the temperature signal according to the temperature range to which it belongs to obtain temperature encoding information; Receive test data and obtain verification code information of the test data; Determine the voltage and pulse parameters corresponding to the current temperature coding information according to the initial corresponding relationship between temperature coding, voltage and pulse; Writing test data into the memory with the determined voltage and pulse parameters; Perform verification and detection on the written test data according to the verification code information; If the detection is wrong, adjust the corresponding relationship between the current temperature code and the voltage and pulse parameters according to the setting method and repeatedly write the test data until the detection is accurate; The corresponding relationship between the current temperature encoding and the voltage and pulse parameters is updated according to the finally determined voltage and pulse parameters.

2. The temperature sensing based read / write driver circuit control method according to claim 1, characterized in that: The method further comprises: The ambient temperature is changed, and the method of claim 1 is executed under different ambient temperatures to update the corresponding relationship between each temperature and the voltage and pulse parameters.

3. The temperature sensing based read / write driver circuit control method according to claim 2, characterized in that: The method of claim 2 is performed on a sampling of memories of the same batch and model to be shipped, and each temperature range corresponding to a temperature code is fully tested at least once by at least one memory to obtain a temperature code-voltage-pulse correspondence table of memories of the corresponding batch model; Store the temperature coding-voltage-pulse correspondence table in the memory of the corresponding batch model. When writing data to the memory: Get temperature signal; Obtain corresponding temperature coding information according to the temperature signal; Extracting corresponding voltage and pulse parameters from a temperature coding-voltage-pulse correspondence table according to the temperature coding information; Write data to the memory with the extracted voltage and pulse parameters.

4. The temperature sensing based read / write driver circuit control method according to claim 3, characterized in that: For each temperature range corresponding to the temperature code, at least two temperatures are selected, and the method of claim 1 is performed under the at least two temperature environments to obtain at least two groups of finally determined voltage and pulse parameters corresponding to the current temperature range; In at least two groups of voltage and pulse parameters, the voltage average value, the pulse amplitude average value, and the pulse width average value are respectively taken as the voltage parameter and pulse parameter corresponding to the corresponding temperature encoding.

5. The temperature-aware read / write driver circuit control method according to claim 34, characterized in that: The method further comprises: Perform read and write tests on samples of the same batch and model of memory to be shipped out of the factory, and perform the method of claim 3 at different stages of the entire life cycle of the memory; Obtain a temperature coding-voltage-pulse correspondence table at different stages of the entire life cycle of the memory; A plurality of temperature coding-voltage-pulse correspondence tables are stored in respective memories of corresponding batch models, and the current stage is used as a trigger condition for enabling the corresponding relationship table.

6. The temperature sensing based read / write driver circuit control method according to claim 1, characterized in that: The setting method is: The voltage V1 in the initial corresponding relationship between temperature coding, voltage and pulse is taken as the initial voltage, the pulse amplitude VP1 is taken as the initial pulse amplitude, and the pulse width PW1 is taken as the initial pulse width. Each time an error is detected, the voltage is increased by an increase of V2, the pulse amplitude is increased by an increase of VP2, and the pulse width is increased by an increase of PW2 until the detection is accurate. ((V3-V1) / 10)-0.002V≤V2≤((V3-V1) / 10)+0.002V, V3 is the preset maximum voltage value; ((VP3-VP1) / 10)-0.02V≤VP2≤(VP3-VP1 / 10)+0.02V, VP3 is the preset maximum pulse amplitude; ((PW3-PW2) / 10)-2ns≤PW2≤((PW3-PW2) / 10)+2ns, where PW3 is the preset maximum pulse width.

7. The temperature sensing based read / write driver circuit control method according to claim 1, characterized in that: The operating temperature range of the storage circuit is divided into several temperature intervals, and each temperature interval is defined to correspond to a corresponding temperature code; Determine the temperature interval to which the temperature signal belongs according to the temperature value corresponding to the temperature signal so as to quantify the temperature signal; Determine the temperature code according to the temperature interval corresponding to the temperature signal to encode the temperature signal and obtain temperature code information; The temperature encoding-voltage-pulse correspondence table of the write operation is determined by the method described in claim 1; The read operation and the write operation have the same temperature encoding-voltage-pulse correspondence table; Alternatively, the read operation has a fixed read voltage and read pulse amplitude and read pulse width; Alternatively, the memory has a temperature coding-voltage-pulse initial correspondence corresponding to a read operation and a temperature coding-voltage-pulse initial correspondence corresponding to a write operation. During the read and write test process, if an error is detected, the correspondence between the current temperature coding and the voltage and pulse parameters of the read operation and the correspondence between the current temperature coding and the voltage and pulse parameters of the write operation are adjusted respectively, and then the test data is repeatedly written until the detection is accurate.

8. The temperature-aware read / write driver circuit control method according to claim 7, characterized in that: The temperature signal is obtained by a semiconductor temperature sensor (1), and the semiconductor temperature sensor (1) outputs different temperature signals according to different ambient temperatures; Acquire temperature coding information according to the relationship between the preset temperature signal and the temperature value; Using a verification encoder (4) to encode the test data to obtain the verification code information; The written test data is verified and detected by a verification decoder (5); The check encoder (4) is an ECC, LDPC or CRC encoder; and the check decoder (5) is an ECC, LDPC or CRC decoder.

9. A read-write driver circuit based on temperature sensing, characterized in that: It comprises a temperature sensor (1), a storage array (2) and a control module (3); The temperature sensor (1) is used to obtain a temperature signal; The storage array (2) has a first fixed storage area for storing a temperature coding-voltage-pulse correspondence table; The control module (3) is connected to the storage array (2) and is used to determine the temperature coding information according to the temperature signal, and then extract the corresponding voltage and pulse parameters according to the temperature coding-voltage-pulse correspondence table in the storage array (2), and write data into the memory with the extracted voltage and pulse parameters; The control module (3) is also used to connect a verification encoder (4) and a verification decoder (5), wherein the verification encoder (4) is used to encode the test data to obtain verification code information, and the verification decoder (5) is used to perform verification detection on the written test data. If a detection error is detected, the corresponding relationship between the current temperature code and the voltage and pulse parameters is adjusted according to a set method, and the test data is repeatedly written until the detection is accurate, so as to update the temperature code-voltage-pulse corresponding relationship table for the memory through the write test at each temperature.

10. The temperature sensing based read / write driver circuit according to claim 9, characterized in that: The storage array (2) stores a plurality of temperature coding-voltage-pulse correspondence tables and corresponding enabling trigger conditions; The activation trigger condition is the stage of the memory with respect to the life cycle; The storage array (2) has a second fixed storage area for storing the current stage information of the memory and the triggering relationship between different stages and the corresponding relationship table; The control module (3) activates the corresponding temperature coding-voltage-pulse correspondence table according to the current stage, and when data needs to be written, extracts the corresponding voltage and pulse parameters from the activated temperature coding-voltage-pulse correspondence table according to the currently determined temperature coding information, and writes the data to the memory with the extracted voltage and pulse parameters; The temperature coding-voltage-pulse correspondence table is a correspondence table for write operations; The read operation and the write operation have the same temperature encoding-voltage-pulse correspondence table; Alternatively, the read operation has a fixed read voltage and read pulse amplitude and read pulse width; Alternatively, the first fixed storage area of ​​the memory stores a temperature coding-voltage-pulse correspondence table for a read operation and a temperature coding-voltage-pulse correspondence table for a write operation respectively; The temperature sensor (1) is a semiconductor temperature sensor (1); The semiconductor temperature sensor (1) is a thermistor, a PN junction temperature sensor (1) or an integrated temperature sensor (1).

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