Device for carrying out induction heat treatment on dielectric material

Abstract

The invention relates to the technical field of heat treatment devices, and particularly discloses a device for performing induction heat treatment on a dielectric material, which consists of a device host, a temperature control system, a speed control system, an induction heating device, a sample operation system, a graphite conveyor belt, a sample storage device, a temperature detection device, a cooling system, a vacuum cavity, a vent valve and a mechanical pump. The device host is connected with the temperature control system and the speed control system, and controls the induction heating device and the sample operation system to adjust the target temperature, the heating rate and the heating time. The dielectric sample is indirectly heated by heating the graphite conveyor belt. The sample operation system is connected with the cooling system and is in communication connection with the cooling system through the temperature control system, and the cooling speed and time can be controlled by controlling the sample operation speed and the refrigerant flow according to needs. The vacuum cavity is connected with a vent valve and a mechanical pump and is in communication connection with a central controller to control air pressure and the like. According to the invention, rapid heating and cooling control can be carried out in the heat treatment process of the dielectric material, the atmosphere and the air pressure can be adjusted, and the crystallization behavior of the dielectric material under rapid heating and cooling is deeply researched, so that the dielectric material with more excellent quality is prepared.

Description

Technical Field

[0001] The invention belongs to the technical field of heat treatment devices, and in particular relates to a device for performing induction heat treatment on dielectric materials. Background Art

[0002] Induction heating is a technology that uses the principle of electromagnetic induction to generate an alternating magnetic field around the workpiece, thereby generating eddy currents inside the workpiece to achieve the purpose of heating. Compared with traditional heating, it has the advantages of fast heating rate, high thermal energy utilization, long life, safety and reliability, and is widely used in the fields of melting, heat treatment, welding of structural materials.

[0003] At present, the heating methods of dielectric materials are mainly divided into two categories: traditional heating and non-traditional heating. Traditional heating is heating through resistance wire, usually using muffle furnace and other means. This method usually leads to disadvantages such as slow heating rate, high heating temperature, long heating time, and uncontrollable cooling rate. Non-traditional heating currently includes microwave heating, laser heating, Joule heating and other methods. Compared with traditional heating, it has the advantages of fast heating rate, short heating time, and low heating stability. However, it is affected by the complexity of equipment and other reasons. Therefore, there is currently a lack of research on the mechanism of the influence of cooling rate on the structural properties of dielectric materials. The crystallization behavior and crystal state of dielectric materials are closely related to the heating and cooling rate and the synergistic effect of heating and cooling. Therefore, in order to explore the influence of large heating and cooling rates on the crystallization behavior of materials, so as to effectively regulate their performance, it is necessary to develop a new preparation platform to achieve extremely fast heating and cooling preparation of dielectric materials. Summary of the invention

[0004] The purpose of the present invention is to solve the shortcomings of narrow temperature rise and fall rate space and weak synergy when heating and cooling dielectric materials, and provide a device for induction heat treatment of dielectric materials.

[0005] The invention provides a device for induction heat treatment of dielectric materials, which consists of a device host, a temperature control system, a speed control system, an induction heating device, a sample operation system, a graphite conveyor belt, a sample storage device, a temperature detection device, a cooling system, a vacuum chamber, a ventilation valve, and a mechanical pump.

[0006] The device for induction heat treatment of dielectric materials provided by the present invention comprises a temperature control system and a speed control system arranged inside the main body of the device; the main body of the device is communicatively connected with the temperature control system, the speed control system and a vacuum chamber; the temperature control system is communicatively connected with an induction heating device, a temperature detection device and a cooling system; the speed control system is connected with a sample operation system and is communicatively connected with the temperature detection device; the sample operation system is connected with a graphite conveyor belt; the graphite conveyor belt is connected with a sample storage device and a cooling system; and the vacuum chamber is connected with a vent valve and a mechanical pump.

[0007] Compared with the existing dielectric heating technology, the beneficial effects of the present invention are:

[0008] 1. The present invention utilizes electromagnetic induction to heat the graphite conveyor belt to indirectly heat the dielectric material, thereby achieving an extremely fast heating process of the dielectric material;

[0009] 2. After the dielectric material is heated, the present invention introduces liquid nitrogen through the cooling system to achieve an extremely fast cooling process of the dielectric material;

[0010] 3. While achieving extremely fast heating and cooling, the present invention takes into account that the quality of dielectric materials is closely related to gas type, humidity or air pressure, and the service life of graphite conveyor belts will be severely shortened when heated in oxygen. Therefore, the heating device is in a vacuum chamber and can provide a dry protective atmosphere or vacuum atmosphere, further improving the preparation quality of dielectric materials and effectively exploring the influence of heating and cooling rates on the crystallization behavior of dielectric materials. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 The schematic diagram of the structure of the induction heat treatment device of the present invention includes a main device 1, a temperature control system 2, a speed control system 3, an induction heating device 4, a sample operation system 5, a graphite conveyor belt 6, a sample storage device 7, a temperature detection device 8, a cooling system 9, a vacuum chamber 10, a vent valve 11, and a mechanical pump 12.

[0012] Figure 2 is a system diagram of the induction heat treatment device of the present invention;

[0013] Figure 3 The surface morphology of lead zirconate film prepared by induction heat treatment;

[0014] Figure 4 The hysteresis loop of the lead zirconate film prepared by induction heat treatment;

[0015] Figure 5 The surface morphology of lead zirconate film prepared by traditional rapid annealing;

[0016] Figure 6 This is the hysteresis loop of lead zirconate thin film prepared by traditional rapid annealing. DETAILED DESCRIPTION

[0017] The present invention is further described in detail below in conjunction with examples, but the embodiments of the present invention are not limited thereto.

[0018] Embodiment 1:

[0019] The present invention will be described in detail below with reference to the accompanying drawings. Figure 1As shown, the device of the present invention consists of a device host 1, a temperature control system 2, a speed control system 3, an induction heating device 4, a sample operation system 5, a graphite conveyor belt 6, a sample storage device 7, a temperature detection device 8, a cooling system 9, a vacuum chamber 10, a ventilation valve 11, and a mechanical pump 12; the temperature control system 2 and the speed control system 3 are arranged inside the device host 1.

[0020] In this embodiment: the temperature control system 2 is connected to the induction heating device 4, and the temperature detection device 8 is connected to the temperature control system 2. The power can be adjusted through the device host 1 according to the set temperature parameters, and the target temperature and the heating and cooling rate can be adjusted at the same time.

[0021] In this embodiment: the speed control system 3 is connected to the sample movement system 5, and the temperature detection device 8 is connected to the speed control system 3. The rotation speed can be adjusted through the device host 1 according to the set movement speed, thereby adjusting the dielectric sample heating time.

[0022] In this embodiment, the graphite conveyor belt 6 is connected to the sample storage device 7, and the graphite conveyor belt 6 is heated by induction heating to indirectly heat the dielectric sample in the form of heat conduction.

[0023] In this embodiment: the graphite conveyor belt 6 is connected to the cooling system 9, the cooling system 9 is connected to the temperature control system 2 and is also connected to the device host 1, so that the cooling speed can be controlled as needed.

[0024] In this embodiment: the vacuum chamber 10 is connected to the ventilation valve 11 and the mechanical pump 12, and is in communication connection with the device host 1. The air pressure, gas type and gas flow rate in the vacuum chamber 10 are automatically adjusted by the device host 1 according to the set parameters.

[0025] Embodiment 2:

[0026] Step 1: Prepare the solution

[0027] Use ethylene glycol methyl ether (2-MOE) as solvent. Lead acetate (Pb(CH3COO)2·3H2O) and zirconium n-propoxide (Zr(OCH2CH2CH3)4) as solutes. According to the atomic ratio of Pb:Zr of 1.1:1, weigh lead acetate and zirconium n-propoxide. Add ethylene glycol methyl ether to lead acetate at a concentration of 0.4M, distill at 120℃ for 2 hours, then cool to room temperature, add zirconium n-propoxide, and stir at room temperature for 2 hours. Finally, add ethylene glycol methyl ether again to supplement the solvent loss caused by the distillation process, so that the solution concentration reaches 0.4M, and a light yellow transparent lead zirconate solution is obtained;

[0028] Step 2: Preparation of thin film materials

[0029] (1) Use a Pt(111) / Ti / SiO2 / Si substrate. Drop the solution prepared in step 1 onto the substrate for spin coating;

[0030] (2) rotating at a speed of 3000 rpm for 30 seconds to obtain a raw film;

[0031] (3) Dry the raw film at 450°C for 5 minutes to remove moisture and thermally decompose organic matter to obtain an amorphous film. The above steps are repeated 4 times to achieve the desired thickness.

[0032] (4) The amorphous film is heated to 650°C at a heating rate of 500°C / s using the device and kept at this temperature for 10 seconds, and liquid nitrogen is introduced into the cooling system to rapidly cool the film to obtain the desired lead zirconate film material. The film material has a thickness of about 300 nanometers. The microstructure and electrical properties of the final film are shown in FIG. Figure 3 and Figure 4 .

[0033] Comparative Example 1:

[0034] Step 1: Solution preparation

[0035] Use ethylene glycol methyl ether (2-MOE) as solvent. Lead acetate (Pb(CH3COO)2·3H2O) and zirconium n-propoxide (Zr(OCH2CH2CH3)4) as solutes. According to the atomic ratio of Pb:Zr of 1.1:1, weigh lead acetate and zirconium n-propoxide. Add ethylene glycol methyl ether to lead acetate at a concentration of 0.4M, distill at 120℃ for 2 hours, then cool to room temperature, add zirconium n-propoxide, and stir at room temperature for 2 hours. Finally, add ethylene glycol methyl ether again to supplement the solvent loss caused by the distillation process, so that the solution concentration reaches 0.4M, and a light yellow transparent solution is obtained.

[0036] Step 2: Preparation of thin film materials

[0037] (1) Use a Pt(111) / Ti / SiO2 / Si substrate. Drop the solution prepared in step 1 onto the substrate for spin coating;

[0038] (2) rotating at a speed of 3000 rpm for 30 seconds to obtain a raw film;

[0039] (3) Dry the raw film at 450°C for 5 minutes to remove moisture and thermally decompose organic matter to obtain an amorphous film. The above steps are repeated 4 times to achieve the desired thickness.

[0040] (4) The amorphous film is placed in a rapid annealing furnace and annealed at 650°C for 3 minutes to obtain the required lead zirconate thin film material. The thickness of the thin film material is about 300 nanometers. The microstructure and electrical properties of the final film are shown in Figure 5 and Figure 6 .

[0041] Matters not covered in the present invention are known technologies. The above embodiments are only for illustrating the technical concept and features of the present invention, and their purpose is to enable people familiar with the technology to understand the content of the present invention and implement it accordingly, and they cannot be used to limit the protection scope of the present invention. Any equivalent changes or modifications made according to the spirit of the present invention should be included in the protection scope of the present invention.

Claims

1. A device for induction heat treatment of dielectric materials, characterized in that: The device is composed of a device host (1), a temperature control system (2), a speed control system (3), an induction heating device (4), a sample operation system (5), a graphite conveyor belt (6), a sample storage device (7), a temperature detection device (8), a cooling system (9), a vacuum chamber (10), a ventilation valve (11), and a mechanical pump (12).

2. The device for induction heat treatment of dielectric materials according to claim 1, characterized in that: A temperature control system (2) and a speed control system (3) are arranged inside the main unit (1) of the device.

3. The device for induction heat treatment of dielectric materials according to claim 1 or 2, characterized in that: The device host (1) is communicatively connected with the temperature control system (2), the speed control system (3), and the vacuum chamber (10).

4. The device for induction heat treatment of dielectric materials according to claim 1, characterized in that: The temperature control system (2) is communicatively connected to the induction heating device (4), the temperature detection device (8), and the cooling system (9).

5. The device for induction heat treatment of dielectric materials according to claim 1, characterized in that: The speed control system (3) is connected to the sample operation system (5) and is communicatively connected to the temperature detection device (8).

6. The device for induction heat treatment of dielectric materials according to claim 1, characterized in that: The sample moving system (5) is connected to a graphite conveyor belt (6).

7. The device for induction heat treatment of dielectric materials according to claim 1, characterized in that: The graphite conveyor belt (6) is connected to a sample storage device (7) and a cooling system (9).

8. The device for induction heat treatment of dielectric materials according to claim 1, characterized in that: The vacuum chamber (10) is connected to a ventilation valve (11) and a mechanical pump (12).

Images