Photoelectric device, preparation method of photoelectric device and electronic equipment

Abstract

The invention discloses a photoelectric device, a preparation method of the photoelectric device and electronic equipment, the photoelectric device comprises an anode and a cathode which are oppositely arranged, an electronic function layer arranged between the cathode and a light-emitting layer, and an auxiliary layer arranged between the electronic function layer and the cathode, the material of the cathode comprises a first metal, and the material of the auxiliary layer comprises a second metal. The material of the auxiliary layer comprises second metal, the reducibility of the first metal is higher than that of the second metal, the performance stability and the storage stability of the photoelectric device can be improved, and the device efficiency and the device service life of the photoelectric device can be improved; when the photoelectric device or the photoelectric device prepared by the preparation method of the photoelectric device is applied to the electronic equipment, the photoelectric property and the service life of the electronic equipment can be improved.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to an optoelectronic device, a method for preparing an optoelectronic device, and an electronic device. Background Art

[0002] Photoelectric devices refer to a type of device made using the photoelectric effect of semiconductors, including but not limited to photoelectric devices, solar cells or photodetectors. Taking light-emitting devices as an example, light-emitting devices include but are not limited to organic light-emitting diodes 10 (Organic Light-Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot Light-Emitting Diodes, QLED). OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of OLED / QLED is: electrons are injected from the cathode of the device into the light-emitting area, and holes are injected from the anode of the device into the light-emitting area. Electrons and holes are recombined in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings, such as the performance stability of optoelectronic devices needs to be further improved. Therefore, how to further improve the performance stability of optoelectronic devices is of great significance to the application and development of optoelectronic devices. Summary of the invention

[0004] The present application provides a photoelectric device, a method for preparing a photoelectric device, and an electronic device to improve the performance stability of the photoelectric device.

[0005] In a first aspect, an embodiment of the present application provides an optoelectronic device, including:

[0006] An anode and a cathode arranged opposite to each other;

[0007] an electronic functional layer, disposed between the cathode and the anode; and

[0008] An auxiliary layer, disposed between the electronic functional layer and the cathode;

[0009] The material of the cathode includes a first metal, the material of the auxiliary layer includes a second metal, and the reducing property of the first metal is higher than that of the second metal.

[0010] Optionally, the material of the electronic functional layer includes an undoped first metal oxide and / or a doped second metal oxide; wherein the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; and / or

[0011] The thickness of the auxiliary layer is 1 nm to 5 nm; and / or

[0012] The material of the cathode is a first metal, and the material of the auxiliary layer is a second metal.

[0013] Optionally, the work function of the first metal is 2.8 eV to 4.3 eV; and / or

[0014] The first metal is selected from one or more of Ag, Al, Li, Mg, Ca and In; and / or

[0015] The work function of the second metal is 4.5 eV to 5.2 eV; and / or

[0016] The second metal is selected from one or more of Mo, Ru, Rh, Pd, Sn, Sb and Te.

[0017] Optionally, the optoelectronic device further comprises a light-emitting layer disposed between the electronic functional layer and the anode, wherein the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, T One or more of TPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescent material, TTA material, thermally activated delayed material, polymer containing BN covalent bond, hybrid localized charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+, Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation; and / or

[0018] The material of the anode includes one or more of a third metal, a carbon material and a third metal oxide; wherein the third metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the third metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or

[0019] The photoelectric device also includes a hole functional layer, which is arranged between the anode and the light-emitting layer. The material of the hole functional layer includes a non-doped first inorganic compound, a doped second inorganic compound, poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, Polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9 -dioctylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4- one or more of: (diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene;

[0020] Among them, the undoped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or the doped second inorganic compound is a main inorganic compound doped with a second doping element, and the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0021] In a second aspect, the present application provides a method for preparing a photoelectric device, comprising the following steps:

[0022] providing a bottom electrode, and forming an electronic functional layer on one side of the bottom electrode; and

[0023] forming a top electrode on a side of the electronic functional layer away from the bottom electrode;

[0024] Wherein, the bottom electrode is an anode and the top electrode is a cathode, after the step of forming the light-emitting layer on one side of the bottom electrode and before the step of forming the top electrode, the preparation method further comprises the steps of: forming an auxiliary layer on a side of the electronic functional layer away from the bottom electrode; the top electrode is formed on a side of the auxiliary layer away from the electronic functional layer; or, the bottom electrode is a cathode and the top electrode is an anode, before the step of forming the electronic functional layer on one side of the bottom electrode, the preparation method further comprises the steps of: forming an auxiliary layer on one side of the bottom electrode; the electronic functional layer is formed on a side of the auxiliary layer away from the bottom electrode;

[0025] The material of the cathode includes a first metal, the material of the auxiliary layer includes a second metal, and the first metal has a higher reducibility than the second metal.

[0026] Optionally, the method for forming the electronic functional layer comprises the steps of:

[0027] depositing a dispersion containing an electronic functional material, the electronic functional material comprising an undoped first metal oxide and / or a doped second metal oxide; and

[0028] Drying the deposited dispersion to obtain an electronic functional layer;

[0029] The method for forming the electronic functional layer further comprises the steps of: placing the electronic functional material in a gas atmosphere for passivation treatment, and the end time point of the passivation treatment is no earlier than the end time point of the drying treatment;

[0030] The gas atmosphere includes reducing gas and / or halogen gas.

[0031] Optionally, the start time of depositing the dispersion is used as the start time point of forming the electronic functional layer, and obtaining the electronic functional layer is used as the end time point of forming the electronic functional layer, and the entire time period from the start time point to the end time point is T, wherein the dispersion is deposited in a first time period, the drying treatment is performed in a second time period, and the passivation treatment is performed in a third time period, there is no overlapping time period between the first time period and the second time period, and the relationship between the third time period and the first time period, the relationship between the third time period and the second time period, and / or the relationship between the third time period and T is any one of the following:

[0032] (a) the third time period completely overlaps with T;

[0033] (b) the third time period is after the second time period;

[0034] (c) the third time period partially overlaps with the first time period, and the third time period partially overlaps with the second time period;

[0035] (d) The third time period does not overlap with the first time period at all, and the third time period partially overlaps with the second time period.

[0036] Optionally, the gas atmosphere comprises a reducing gas and a halogen gas, and the volume ratio of the reducing gas to the halogen gas is 1:(2-3); and / or

[0037] The reducing gas is selected from one or more of NH3, H2, CO, H2S, SO and SO2; and / or

[0038] The halogen gas is selected from one or more of Cl2 and Br2; and / or

[0039] The passivation treatment time is 20min to 120min; and / or

[0040] The thickness of the electronic functional layer is 10nm-100nm.

[0041] Optionally, the drying treatment includes laser annealing treatment; in the laser annealing treatment, the annealing depth does not exceed the thickness of the electronic functional layer; and / or, the wavelength of the laser is 515nm~532nm; and / or, the laser spot is linear, the line width is 0.10mm~0.13mm, and the line length is 9.7mm~10.1mm; and / or, the laser scanning speed is 1mm / s~5mm / s; and / or, the deposited dispersion is subjected to 4~7 overlapping scanning annealing; and / or, the laser annealing treatment is pulsed, and the single pulse laser energy density is 700mJ / cm2 ~800mJ / cm 2 ; and / or

[0042] The non-doped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or

[0043] The doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; and / or

[0044] The method for preparing the optoelectronic device further comprises the steps of: forming a light-emitting layer between the electronic functional layer and the anode, and / or forming a hole functional layer between the electronic functional layer and the anode;

[0045] Wherein, the material of the light-emitting layer includes organic light-emitting materials and / or quantum dots; and / or, the material of the hole functional layer includes inorganic compounds, inorganic compounds containing doping elements, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-di(9-carbazole) Biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazole-9- triphenylamine, 4,4',4'-tri(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9, One or more of 9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, wherein the second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and the second metal element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements; and / or

[0046] The work function of the first metal is 2.8 eV to 4.3 eV; and / or

[0047] The first metal is selected from one or more of Ag, Al, Li, Mg, Ca and In; and / or

[0048] The work function of the second metal is 4.5 eV to 5.2 eV; and / or

[0049] The second metal is selected from one or more of Mo, Ru, Rh, Pd, Sn, Sb and Te.

[0050] In a third aspect, the present application further provides an electronic device, comprising the optoelectronic device as described in any one of the first aspects, or the optoelectronic device manufactured by the preparation method as described in any one of the second aspects.

[0051] The present application provides an optoelectronic device, a method for preparing an optoelectronic device, and an electronic device, which have the following technical effects:

[0052] In the photoelectric device, an auxiliary layer is added between the electronic functional layer and the cathode, the material of the auxiliary layer includes a second metal, the material of the cathode includes a first metal, the reducibility of the first metal is higher than that of the second metal, the second metal is not easy or will not react chemically with the electronic functional layer, and the auxiliary layer can avoid direct contact between the electronic functional layer and the cathode, thereby avoiding chemical reactions between the cathode and the electronic functional layer, improving the stability of the electronic functional layer, and improving the problem of oxidation corrosion of the cathode by the electronic functional layer, effectively improving the performance stability and storage stability of the photoelectric device, and helping to improve the device efficiency and device life of the photoelectric device. The preparation method of the photoelectric device has the advantages of simple preparation process, easy control of process conditions, and meeting the needs of large-scale industrial production. The photoelectric device or the photoelectric device prepared by the preparation method of the photoelectric device is applied to electronic equipment, which is conducive to improving the photoelectric performance and service life of the electronic equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0053] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0054] Figure 1 A schematic diagram of the structure of a photoelectric device provided in an embodiment of the present application.

[0055] The reference numerals are as follows:

[0056] 10: optoelectronic device, 11: anode, 12: cathode, 13: light-emitting layer, 14: auxiliary layer, 15: electronic functional layer, 16: hole functional layer, 161: hole injection layer, 162: hole transport layer. DETAILED DESCRIPTION

[0057] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0058] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0059] It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be presented in the form of a range. It should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0060] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the optoelectronic device in actual use or working state, specifically the drawing direction in the attached drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish a sequence.

[0061] In the present application, “layer A is formed on one side of layer B”, “layer A is formed on the side of layer B away from layer C” or similar descriptions can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B. Similarly, “layer A is arranged on one side of layer B”, “layer A is arranged on the side of layer B away from layer C” can be expressed as layer A is in direct contact with layer B, or as other spacing structure layers are arranged between layer A and layer B; “layer A is arranged between layer B and layer C” can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.

[0062] As used in this application, the term "including" means "including but not limited to".

[0063] As used in this application, the term "and / or" is used to describe the association relationship of associated objects, indicating that there may be three relationships, for example, A and / or B, which may indicate: A exists alone, A and B exist at the same time, and B exists alone. A and B may be singular or plural.

[0064] As used in this application, the term "at least one" refers to one or more, and "multiple" refers to two or more. The term "at least one", "the following at least one" or similar expressions refer to any combination of these items, including any combination of a single or multiple. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc or abc, where a, b and c can be single or multiple, respectively.

[0065] The applicant has found that the device life of existing optoelectronic devices has initially met the requirements of industrialization, but the performance stability of optoelectronic devices needs to be further improved, especially QLED. When the material of the electronic functional layer in the optoelectronic device includes metal oxide, the device efficiency and device life will increase significantly when the packaged optoelectronic device is placed, which is called the "positive aging effect". The "positive aging effect" is significant after being stored at room temperature and pressure for about 180 hours; then, as the storage time increases, for example, after being stored at room temperature and pressure for 1000 hours, the device efficiency and device life will decay rapidly, which is called the "negative aging effect". The continuous change of metal oxides in the electronic functional layer is one of the key factors causing the "positive aging effect" and the "negative aging effect", and the annealing process of the encapsulation resin, cathode material and electronic functional layer will affect the state of the metal oxides in the electronic functional layer to varying degrees.

[0066] Specifically, taking the cathode material as an example, photoelectric devices usually use metals with active properties (high reducibility) as cathode materials to provide a large number of electrons, thereby improving the current efficiency of the photoelectric device, but this type of metal is easy to react chemically with the metal oxide in the electronic functional layer. However, if a metal with weaker chemical activity (weak reducibility) is used as the cathode material, based on the fact that the metal with weaker chemical activity has a higher work function, it will cause a large electron injection barrier between the cathode and the electronic functional layer, thereby increasing the difficulty of electron injection and reducing the electron injection level, which in turn has a negative impact on the device efficiency and device life of the photoelectric device. Among them, the mechanism of the chemical reaction between the metal oxide in the electronic functional layer and the cathode material is that the metal oxide in the electronic functional layer contains a large number of active oxygen atoms, so that the cathode metal in contact with the metal oxide in the electronic functional layer will be oxidized, resulting in cathode corrosion.

[0067] Based on this, the present application provides a photoelectric device, which can be a positive structure or an inverted structure. The photoelectric device includes but is not limited to a light emitting device, a solar cell or a photoelectric sensor, such as Figure 1 As shown, the photoelectric device 10 includes an anode 11, a cathode 12, an auxiliary layer 14 and an electronic functional layer 15, wherein the anode 11 and the cathode 12 are arranged opposite to each other, the electronic functional layer 15 is arranged between the anode 11 and the cathode 12, the auxiliary layer 14 is arranged between the electronic functional layer 15 and the cathode 12, the material of the cathode 12 includes a first metal, the material of the auxiliary layer 14 includes a second metal, and the reducibility of the first metal is higher than that of the second metal.

[0068] In the optoelectronic device 10 of the embodiment of the present application, an auxiliary layer 14 is added between the electronic functional layer 15 and the cathode 12. The material of the auxiliary layer 14 includes a second metal. Since the second metal has a lower reducibility, the second metal is not easy or will not chemically react with the electronic functional layer 15. In addition, the auxiliary layer 14 can avoid direct contact between the electronic functional layer 15 and the cathode 12, thereby avoiding chemical reaction between the cathode 12 and the electronic functional layer 15, improving the stability of the electronic functional layer 15, and improving the problem of oxidation corrosion of the cathode 12 by the electronic functional layer 15, thereby effectively improving the performance stability of the optoelectronic device 10.

[0069] In order to further reduce the electron injection barrier to improve the electron injection level of the optoelectronic device 10, thereby further improving the optoelectronic performance and device life of the optoelectronic device 10, in some embodiments of the present application, the work function of the first metal is 2.8eV~4.3eV, and the first metal is selected from one or more of Ag, Al, Li, Mg, Ca and In; and / or, the work function of the second metal is 4.5eV~5.2eV, and the second metal is selected from one or more of Mo, Ru, Rh, Pd, Sn, Sb and Te.

[0070] In order to improve the performance stability of the optoelectronic device 10 and reduce the electron injection barrier, and control the manufacturing cost of the optoelectronic device 10, in some embodiments of the present application, the thickness of the auxiliary layer 14 is 1nm to 5nm, for example, 1nm, 2nm, 3nm, 4nm, 5nm or a value between any two of the aforementioned values.

[0071] In the optoelectronic device 10 of the application embodiment, the electronic functional layer 15 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 15 is, for example, 10nm to 100nm. The electronic functional layer 15, for example, includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 15 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 12 than the hole blocking layer; for the electronic functional layer 15 including the electron injection layer and the electron transport layer, the electron injection layer is closer to the cathode 12 than the electron transport layer; for the electronic functional layer 15 including the electron transport layer and the hole blocking layer, the electron transport layer is closer to the cathode 12 than the hole blocking layer. As an example, the electronic functional layer 15 is a single-layer structure, and the electronic functional layer 15 is an electron transport layer.

[0072] In order to further improve the electron injection level of the optoelectronic device 10, in some embodiments of the present application, the material of the electronic functional layer 15 includes a non-doped first metal oxide and / or a doped second metal oxide. The non-doped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and the molar percentage of the first doping element in the doped second metal oxide is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30% or not higher than 50%. The doped second metal oxide includes, but is not limited to, one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0073] In some embodiments of the present application, the undoped first metal oxide and / or the doped second metal oxide is a nanomaterial, and the form of the undoped first metal oxide and / or the doped second metal oxide can be nanoparticles, nanorods or nanosheets. When the undoped first metal oxide and / or the doped second metal oxide is nanoparticles, the average particle size is 2nm to 20nm.

[0074] It can be understood that when the electronic functional layer 15 includes multiple materials and has a multi-layer structure, the multiple materials may all be in the same layer, or respectively in different layers, or partially in the same layer.

[0075] In some embodiments of the present application, see Figure 1 The optoelectronic device 10 further includes a light-emitting layer disposed between the electronic functional layer 15 and the anode 11. The light-emitting layer 13 may be a single-layer structure or a multi-layer structure, and the thickness of the light-emitting layer 13 is, for example, 10 nm to 100 nm. In some embodiments of the present application, the material of the light-emitting layer 13 includes one or more of an organic light-emitting material and a quantum dot.

[0076] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0077] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0078] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0079] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl-, Br - or I-.

[0080] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl-, Br - or I - .

[0081] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0082] It should be noted that when the material of the light-emitting layer 13 includes quantum dots, the surface of the quantum dots may also be connected with ligands. The ligands include but are not limited to C1~C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0083] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0084] In order to further improve the optoelectronic performance and device life of the optoelectronic device 10, in some embodiments of the present application, the material of the anode 11 includes one or more of a third metal, a carbon material, and a third metal oxide. The third metal includes, but is not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg; the carbon material includes, but is not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fiber; the third metal oxide may be doped or undoped, and the doped third metal oxide includes, but is not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO), and the undoped third metal oxide includes, but is not limited to, one or more of TiO2, SnO2, ZnO, and In2O3.

[0085] It should be noted that the anode 11 may also be a composite electrode having a structure similar to a "sandwich", wherein the materials of the upper and lower layers are respectively doped or undoped third metal oxides, and the material of the middle layer is a metal, examples of which are one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thicknesses of the anode 11 and the cathode 12 are, for example, independently selected from 20 nm to 300 nm.

[0086] In order to promote the electron-hole transfer balance, thereby further improving the photoelectric performance and device life of the photoelectric device 10, in some embodiments of the present application, continue to refer to Figure 1 The optoelectronic device 10 further includes a hole functional layer 16 , which is disposed between the electronic functional layer 15 and the anode 11 . It is understandable that when the optoelectronic device 10 includes a light-emitting layer 13 , the hole functional layer 16 is disposed between the light-emitting layer 13 and the anode 11 .

[0087] The hole functional layer 16 may be a single-layer structure or a multi-layer structure. The thickness of the hole functional layer 16 is, for example, 10 nm to 100 nm. The hole functional layer 16 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 16 including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 11 than the electron blocking layer; for the hole functional layer 16 including the hole transport layer and the electron blocking layer, the hole transport layer is closer to the anode 11 than the electron blocking layer. As an example, continue to refer to Figure 1 The hole functional layer 16 is composed of a hole injection layer 161 and a hole transport layer 162 which are stacked together. The hole injection layer 161 is closer to the anode 11 than the hole transport layer 162 .

[0088] The material of the hole functional layer 16 is, but is not limited to, a second inorganic compound, a second inorganic compound doped with a second metal element, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N,N-bis (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [(9,9-dioctylfluorenyl-2,7-diyl)-co- (4,4'-(N-(4-sec-butyl) 4,4',4'-Tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4"-tris(carbazol-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9) 、N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviated as Spiro-TPD, CAS No. 1033035-83-4), N2,One or more of N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-omeTAD, CAS No. 207739-72-8).

[0089] Among them, the non-doped first inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), P-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2) and tungsten sulfide (such as WS2); and / or, the doped second inorganic compound is a main inorganic compound doped with a second doping element, the main The inorganic compounds include, but are not limited to, one or more of graphene, C60, nickel oxide (e.g., NiO), molybdenum oxide (e.g., MoO3), tungsten oxide (e.g., WO3), vanadium oxide (e.g., V2O5), P-type gallium nitride, chromium oxide (e.g., Cr2O3), copper oxide (e.g., CuO or Cu2O), copper sulfide (e.g., CuS), molybdenum sulfide (e.g., MoS2) and tungsten sulfide (e.g., WS2), and / or the second doping element includes, but is not limited to, one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0090] It is understood that when the hole functional layer 16 includes multiple materials and the hole functional layer 16 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers, or partially in the same layer. For example, when the first hole functional layer 16 is composed of a stacked hole injection layer and a hole transport layer, the material of the hole functional layer 16 includes PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers, the material of the hole injection layer is PEDOT:PSS, and the material of the hole transport layer is TFB.

[0091] The present application also provides a method for preparing a photoelectric device, which can be used to prepare any of the photoelectric devices described above. The method for preparing the photoelectric device comprises the following steps:

[0092] S1. providing a bottom electrode and forming an electronic functional layer on one side of the bottom electrode;

[0093] S2. Form a top electrode on a side of the electronic functional layer away from the bottom electrode.

[0094] Wherein, when the optoelectronic device is of an upright structure, the bottom electrode is an anode and the top electrode is a cathode, and between step S1 and step S2, the method for preparing the optoelectronic device further comprises the steps of: forming an auxiliary layer on the side of the electronic functional layer away from the bottom electrode; and forming the top electrode on the side of the auxiliary layer away from the electronic functional layer. Alternatively, when the optoelectronic device is of an inverted structure, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming the electronic functional layer on one side of the bottom electrode, the method for preparing the optoelectronic device further comprises the steps of: forming an auxiliary layer on one side of the bottom electrode; and forming the electronic functional layer on the side of the auxiliary layer away from the bottom electrode.

[0095] It should be noted that the structural composition of the anode, cathode, electronic functional layer and auxiliary layer are all described above. The preparation methods of each film layer in the optoelectronic device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation coating, electron beam evaporation coating, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of the solution method includes but is not limited to spin coating, printing, doctor blading, dip pulling, immersion, spraying, roll coating, casting, slit coating and strip coating.

[0096] In order to further improve the performance stability of the manufactured optoelectronic device, in some embodiments of the present application, the method for forming the electronic functional layer includes the steps of:

[0097] S11, depositing a dispersion containing an electronic functional material, wherein the electronic functional material includes an undoped first metal oxide and / or a doped second metal oxide;

[0098] S12, drying the deposited dispersion to obtain an electronic functional layer.

[0099] Among them, the method for forming the electronic functional layer also includes the steps of: placing the electronic functional material in a gas atmosphere for passivation treatment, and the end time point of the passivation treatment is no earlier than the end time point of the drying treatment; the gas atmosphere includes reducing gas and / or halogen gas.

[0100] It should be noted that since the electronic functional material contains a large number of active oxygen atoms, when the electronic functional material is in direct contact with a chemically active metal, the metal will be oxidized. In order to avoid oxidation of the metal or increase the difficulty of oxidation of the metal, some of the active oxygen atoms in the electronic functional material can be consumed to form oxygen vacancies before the electronic functional material is in contact with the metal. Therefore, in the passivation treatment, the reducing gas is used to consume some of the active oxygen atoms in the electronic functional material to form oxygen vacancies, thereby further improving the performance stability of the optoelectronic device; the halogen gas is to passivate the shallow energy level defects of the electronic functional material, such as interstitial metal defects and other defects that are not conducive to the performance of the optoelectronic device, thereby further improving the performance stability of the electronic functional layer. Since the electronic functional material will produce shallow energy level defects such as interstitial metal defects that are not conducive to the performance of the optoelectronic device during the drying process, in order to further reduce the shallow energy level defects in the electronic functional layer that are not conducive to the performance of the optoelectronic device, the end time of the passivation treatment is later than the end time of the drying treatment.

[0101] In step S11 , the dispersion liquid deposition method includes but is not limited to one or more of spin coating, printing, doctor blading, dip pulling, immersion, spraying, rolling, casting, slit coating and strip coating.

[0102] The dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds. Among them, alkanes include but are not limited to one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, and amide compounds include but are not limited to N, N-dimethylformamide. As an example, the dispersant is ethanol. It is understood that the dispersion may further include one or more auxiliary agents for promoting the dispersion or dissolution of the electronic functional material, and the auxiliary agents include but are not limited to surfactants.

[0103] In order to improve both the density of the electronic functional layer and the dispersion performance of the electronic functional material in the dispersant, in some embodiments of the present application, the concentration of the electronic functional material in the dispersion is 10 mg / mL to 50 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL or a value between any two of the foregoing values.

[0104] In step S12, "drying treatment" includes all processes that can make the deposited dispersion obtain higher energy to form a cured film, including but not limited to one or more of natural air drying, heat treatment, vacuum drying, laser annealing, electron beam annealing, atomic annealing and microwave irradiation annealing. It should be noted that high temperature (temperature above 100°C) heat treatment can remove some oxygen atoms in the electronic functional material to form oxygen vacancies that are conducive to electron transmission, improve the conductivity of the electronic functional material, and improve or avoid the problem of oxidation of metals in direct contact with the electronic functional material, thereby improving the photoelectric performance, device life and performance stability of the optoelectronic device; however, if the functional layer located below the electronic functional layer includes a thermosensitive material (such as quantum dots), high temperature heat treatment will damage the underlying functional layer, resulting in a decrease in the performance of the optoelectronic device. Therefore, it is preferred that the drying treatment includes an annealing treatment with a controllable depth, such as a laser annealing treatment. In the laser annealing treatment, the annealing depth does not exceed the thickness of the electronic functional layer to avoid damaging the underlying functional layer or reduce the degree of damage.

[0105] In order to improve both the effect and efficiency of the laser annealing process, in some embodiments of the present application, in the laser annealing process, the wavelength of the laser is 515nm~532nm, for example, it can be 515nm, 527nm or 532nm, and / or the laser scanning speed is 1mm / s~5mm / s.

[0106] In order to improve the uniformity of the laser annealing process, in some embodiments of the present application, the laser spot is linear, with a line width of 0.10 mm to 0.13 mm and a line length of 9.7 mm to 10.1 mm.

[0107] In order to further reduce the resistivity of the electronic functional layer, thereby further improving the conductivity of the electronic functional layer, in some embodiments of the present application, the laser annealing treatment is pulsed, and the single pulse laser energy density is 700mJ / cm 2 ~800mJ / cm 2 ; and / or, performing 4 to 7 overlapping scanning annealing on the deposited dispersion.

[0108] It should be noted that, compared with laser annealing of a cured film including electronic functional materials, laser annealing of a wet film including electronic functional materials can further improve the device efficiency and device life of optoelectronic devices. The reason may be that: in the wet film state, there are many uncontracted gaps between the nanoparticles in the electronic functional material, and laser annealing can shrink these gaps, thereby increasing the removal rate of oxygen atoms inside the nanoparticles; while the arrangement density of the nanoparticles in the cured film is higher than that of the wet film, and oxygen atoms are not easy to overflow during laser annealing, so the removal rate of oxygen atoms inside the nanoparticles is limited.

[0109] In the preparation method of the optoelectronic device of the present application, the passivation treatment, for example, includes the steps of: the prefabricated device deposited with electronic functional materials is allowed to stand in a gas atmosphere, the gas atmosphere is constant, and the pressure is 300Pa~800Pa; the passivation treatment also includes the steps of: placing the prefabricated device deposited with electronic functional materials in a hollow device, and then introducing gas therein, and the gas flow rate is, for example, 10mL / min~15mL / min.

[0110] It should be noted that the end time point of the passivation treatment may be the time point when the oxygen vacancy content in the deposited electronic functional material reaches a maximum value, and the oxygen vacancy content in the deposited electronic functional material may be detected by X-ray photoelectron spectroscopy (XPS).

[0111] In some embodiments of the present application, the reducing gas is selected from one or more of NH3, H2, CO, H2S, SO and SO2, and / or the halogen gas is selected from one or more of Cl2 and Br2.

[0112] In order to take into account both increasing the oxygen vacancy content in electronic functional materials and reducing the shallow energy level defects of electronic functional materials, thereby further improving the photoelectric performance and performance stability of optoelectronic devices, in some embodiments of the present application, the gas atmosphere includes a reducing gas and a halogen gas, and the volume ratio of the reducing gas to the halogen gas is 1:(2~3), for example, it can be 1:2, 1:2.2, 1:2.4, 1:2.6, 1:2.8, 1:3 or a value between any two of the foregoing ratios.

[0113] In some embodiments of the present application, the start time of depositing the dispersion is used as the starting time point of forming the electronic functional layer, and obtaining the electronic functional layer is used as the ending time point of forming the electronic functional layer, and the entire time period from the starting time point to the ending time point is T, wherein the dispersion is deposited in a first time period, the drying process is performed in a second time period, and the passivation process is performed in a third time period, there is no overlapping time period between the first time period and the second time period, and the relationship between the third time period and the first time period, the relationship between the third time period and the second time period, and / or the relationship between the third time period and T is any one of the following:

[0114] (a) The third time period completely overlaps with T;

[0115] (b) the third time period is after the second time period;

[0116] (c) the third time period partially overlaps with the first time period, and the third time period partially overlaps with the second time period;

[0117] (d) The third time period does not overlap with the first time period at all, and the third time period partially overlaps with the second time period.

[0118] Wherein, T is a time range set by the operator, which can be obtained by repeated experiments, and T may be different for different electronic functional materials. In some embodiments of the present application, the total time of T is 20 min to 120 min, for example, it can be 20 min, 40 min, 60 min, 80 min, 100 min, 120 min or a value between any two of the foregoing values.

[0119] The first time period is a time range set by the operator, which can be obtained by repeated experiments, and the total time of the first time period will vary depending on the type of electronic functional material, film thickness and dispersant. In some embodiments of the present application, the total time of the first time period is 30s to 30min, for example, 30s, 1min, 5min, 10min, 20min, 30min or a value between any two of the foregoing values.

[0120] The drying process can be carried out continuously or intermittently, for example, the drying process includes multiple intermittent drying sub-processes. It is understandable that when the drying process is carried out intermittently, the second time period is composed of multiple time sub-segments of the drying sub-processes. The second time period is a time range set by the operator, which can be obtained by repeated experiments, and the total time of the second time period will vary depending on the type of electronic functional material, film thickness, solvent and drying process conditions. In some embodiments of the present application, the total time of the second time period is 10 minutes to 60 minutes, for example, it can be 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes or a value between any two of the aforementioned values.

[0121] The passivation treatment can be carried out continuously or intermittently, for example, the passivation treatment includes multiple intermittent passivation sub-treatments. It is understandable that when the passivation treatment is carried out intermittently, the third time period is composed of time sub-segments of multiple passivation sub-treatments. The third time period is a time range set by the operator, which can be obtained by repeated experiments, and the total time of the third time period will vary depending on the type of electronic functional material, film thickness and dispersant. In some embodiments of the present application, the total time of the third time period is 20 minutes to 120 minutes, for example, it can be 20 minutes, 40 minutes, 60 minutes, 80 minutes, 100 minutes, 120 minutes or a value between any two of the aforementioned values.

[0122] For case (a), "the third time period completely overlaps with T" means that the passivation treatment is carried out continuously and is performed throughout the entire process of formation of the electronic functional layer, that is, the starting time point of the third time period is the same as the starting time point of T, and the ending time point of the third time period is the same as the ending time point of T.

[0123] For case (b), "the third time period is after the second time period" means that the third time period does not overlap with the first time period at all, and the third time period does not overlap with the second time period at all, and the drying treatment is performed first, and then the passivation treatment is performed. In case (b), the passivation treatment can be performed continuously or intermittently.

[0124] For case (c), "the third time period partially overlaps with the first time period" means that the deposition of the dispersion and the passivation treatment are performed simultaneously, but the third time period does not completely overlap with the first time period; "the third time period partially overlaps with the second time period" means that the drying treatment and the passivation treatment are performed simultaneously, but the third time period does not completely overlap with the second time period. It can be understood that the third time period is within T.

[0125] For case (d), "the third time period does not overlap with the first time period at all" means that there is no simultaneous deposition of the dispersion and passivation treatment. It can be understood that the third time period is within T.

[0126] In some embodiments of the present application, the method for preparing the optoelectronic device further includes the steps of: forming a light-emitting layer between the electronic functional layer and the anode, and / or forming a hole functional layer between the electronic functional layer and the anode. As an example, when the optoelectronic device is a positive structure, the method for preparing the optoelectronic device includes the steps of: providing a bottom electrode, and sequentially forming a hole functional layer, a light-emitting layer, an electronic functional layer, an auxiliary layer and a top electrode on one side of the bottom electrode; or, when the optoelectronic device is an inverted structure, the method for preparing the optoelectronic device includes the steps of: providing a bottom electrode, and sequentially forming an auxiliary layer, an electronic functional layer, a light-emitting layer, a hole functional layer and a top electrode on one side of the bottom electrode. The structural composition of the light-emitting layer and the hole functional layer are described above, and the preparation methods of the light-emitting layer and the hole functional layer include but are not limited to the aforementioned chemical method and / or physical method.

[0127] After the preparation of each film layer of the optoelectronic device is completed, a packaging process is required. The packaging process can be performed by a commonly used machine packaging or manual packaging. In the packaging process environment, the oxygen content and the water content are both lower than 0.1ppm to ensure the stability of the optoelectronic device. It should be noted that in existing optoelectronic devices, organic acid resins (such as acrylic resins) are common optoelectronic device packaging materials. When the material of the electronic functional layer in the optoelectronic device includes a metal oxide, the organic acid resin causes the metal oxide to react continuously with the cathode, and the optoelectronic device exhibits a "positive aging effect" in the short term. However, there are a large number of hydroxyl ligands on the surface of the metal oxide, and the hydroxyl ligands also react continuously with the organic acid to generate water, resulting in a rapid attenuation of the device efficiency and device life of the optoelectronic device. Therefore, in order to further improve the performance stability of the optoelectronic device, in some embodiments of the present application, an acid-free organic packaging resin (such as an acid-free epoxy resin) is used for packaging.

[0128] The embodiment of the present application also provides an electronic device, wherein the electronic device includes any of the optoelectronic devices described above, or the electronic device includes an optoelectronic device prepared by any of the methods for preparing the optoelectronic devices described above. The electronic device may be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical machine, a camera, a game console, a digital camera, a car navigation system, an electronic billboard, an ATM, a smart bracelet, a smart watch, a virtual reality (VR) device, or a wearable device.

[0129] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0130] Example 1

[0131] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a quantum dot light emitting diode of an upright structure, such as Figure 1 As shown, from bottom to top, the optoelectronic device 10 includes an anode 11, a hole functional layer 16, a light emitting layer 13, an electronic functional layer 15, an auxiliary layer 14 and a cathode 12 which are stacked in sequence, wherein the hole functional layer 16 is composed of a stacked hole injection layer 161 and a hole transport layer 162, the hole injection layer 161 is closer to the anode 11 than the hole transport layer 162, and the electronic functional layer 15 is a single-layer structure. The light emitting area of ​​the optoelectronic device is 2 cm long × 2 cm wide.

[0132] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0133] The material of the anode 11 is ITO, and the thickness of the anode 11 is 20 nm;

[0134] The material of cathode 12 is Ag, and the thickness of cathode 12 is 35 nm;

[0135] The material of the light-emitting layer 13 is CdSe (core) / CdS (shell) quantum dots, the light-emitting color is green, and the thickness of the light-emitting layer 13 is 15 nm;

[0136] The material of the hole injection layer 161 is PEDOT:PSS, and the thickness of the hole injection layer 161 is 21 nm;

[0137] The material of the hole transport layer 162 is TFB, and the thickness of the hole transport layer 162 is 16 nm;

[0138] The material of the electronic functional layer 15 is nano Zn 0.85 Mg 0.15 O (average particle size is 5 nm), the thickness of the electronic functional layer 15 is 35 nm;

[0139] The material of the auxiliary layer 14 is Mo, and the thickness of the auxiliary layer 14 is 3 nm.

[0140] The method for preparing the optoelectronic device in this embodiment comprises the following steps:

[0141] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, ultrasonically clean with acetone for 15 minutes, ultrasonically clean with ethanol for 15 minutes, and ultrasonically clean with isopropanol for 15 minutes, and after drying, perform a UV-ozone surface treatment for 15 minutes to obtain a substrate including an anode;

[0142] S1.2, in an air environment at room temperature and pressure, spin-coat a 2.8% by mass PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then heat-treat at 120°C to solidify the film to obtain a hole injection layer;

[0143] S1.3, in an argon environment at room temperature and pressure, spin-coat a 6.5 mg / mL TFB-chlorobenzene solution on the side of the hole injection layer away from the anode, and then heat-treat at 150°C to solidify the film to obtain a hole transport layer;

[0144] S1.4. In an argon environment at room temperature and pressure, a CdSe / CdS quantum dot-n-octane solution with a concentration of 30 mg / mL is spin-coated on the side of the hole transport layer away from the hole injection layer, and then subjected to a constant temperature heat treatment at 100° C. to solidify the film to obtain a light-emitting layer;

[0145] S1.5, in an argon environment at room temperature and pressure, spin-coat 30 mg / mL of nano Zn 0.85 Mg 0.15O-ethanol solution to form a wet film, and then the wet film is laser annealed to form a cured film. The process parameters of the laser annealing treatment are: the laser wavelength is 532nm, the laser spot is linear, the line width is 0.10mm, the line length is 10mm, the laser scanning speed is 3mm / s, the laser annealing treatment is pulsed, and the single pulse laser energy density is 750mJ / cm 2 , the wet film was annealed by five overlapping scans.

[0146] S1.6, placing the prefabricated device including the cured film obtained in step S1.5 in a gas atmosphere for passivation treatment, wherein the gas atmosphere is composed of NH3 and Cl2, wherein the volume ratio of NH3 to Cl2 is 1:2.5, the pressure of the gas atmosphere is 500 Pa, and the passivation treatment time is 25 minutes, to obtain an electronic functional layer;

[0147] S1.7, evaporating Mo on the side of the electronic functional layer away from the light-emitting layer to obtain an auxiliary layer;

[0148] S1.8, placing the prefabricated device including the auxiliary layer obtained in step S1.7 in a gas pressure of 4×10 -6 In the mbar evaporation chamber, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain a cathode, and then the optoelectronic device is encapsulated using the acid-free epoxy resin LOCTITE 3335.

[0149] Example 2

[0150] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that the thickness of the auxiliary layer is replaced with "1 nm".

[0151] The preparation method of the optoelectronic device in this embodiment is carried out with reference to that in Embodiment 1.

[0152] Example 3

[0153] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that the thickness of the auxiliary layer is replaced with "5 nm".

[0154] The preparation method of the optoelectronic device in this embodiment is carried out with reference to that in Embodiment 1.

[0155] Example 4

[0156] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that the material of the auxiliary layer is replaced with "Sn".

[0157] The preparation method of the optoelectronic device in this embodiment is carried out with reference to that in Embodiment 1.

[0158] Example 5

[0159] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that the material of the auxiliary layer is replaced with "Sb".

[0160] The preparation method of the optoelectronic device in this embodiment is carried out with reference to that in Embodiment 1.

[0161] Example 6

[0162] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that: the nano Zn 0.85 Mg 0.15 The defect states of O are different.

[0163] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this embodiment is different in that the gas atmosphere in step S1.6 is changed to NH3 atmosphere, that is, Cl2 is omitted.

[0164] Example 7

[0165] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that: the nano Zn 0.85 Mg 0.15 The defect states of O are different.

[0166] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this embodiment is different in that the gas atmosphere in step S1.6 is changed to Cl2 atmosphere, that is, NH3 is omitted.

[0167] Example 8

[0168] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is mainly different in that: the nano Zn 0.85 Mg 0.15 The defect states of O are different.

[0169] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this embodiment is different in that step S1.6 is omitted.

[0170] Example 9

[0171] This embodiment provides a photoelectric device and a method for preparing the same. The structure and composition of the photoelectric device in this embodiment are substantially the same as those in Embodiment 1.

[0172] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that step S1.5 is replaced by "under an argon environment at room temperature and pressure, spin-coating a nano ZnO2 with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer; 0.85 Mg 0.15 O-ethanol solution, and then placed in a constant temperature heat treatment at 60 ° C to solidify into a film to obtain an electronic functional layer.

[0173] Example 10

[0174] This embodiment provides a photoelectric device and a method for preparing the same. The structure and composition of the photoelectric device in this embodiment are substantially the same as those in Embodiment 1.

[0175] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this embodiment is that step S1.5 is replaced by "under an argon environment at room temperature and pressure, spin-coating a nano ZnO2 with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer; 0.85 Mg 0.15 O-ethanol solution, and then placed at 60 ° C constant temperature heat treatment to solidify into a film, and then the formed solidified film is subjected to laser annealing treatment, the process parameters of the laser annealing treatment are the same as those in Example 1, and an electronic functional layer is obtained.

[0176] Embodiment 11

[0177] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in Embodiment 1, the photoelectric device in this embodiment is different mainly in that the auxiliary layer is omitted.

[0178] Compared with the method for preparing the optoelectronic device in Example 1, the method for preparing the optoelectronic device in this embodiment is mainly different in that step S1.7 is omitted.

[0179] Example 12

[0180] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the difference between the photoelectric device in this comparative example is that the auxiliary layer is omitted, and the nano Zn 0.85 Mg 0.15 The defect states of O are different.

[0181] Compared with the method for preparing the optoelectronic device in Example 1, the difference of the method for preparing the optoelectronic device in this comparative example is mainly that step S1.6 and step S1.7 are omitted.

[0182] Comparative Example

[0183] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in Example 1, the difference between the photoelectric device in this comparative example is that the auxiliary layer is omitted, and the nano Zn 0.85 Mg 0.15 The defect states of O are different.

[0184] Compared with the preparation method of the optoelectronic device in Example 1, the difference of the preparation method of the optoelectronic device in this comparative example is mainly that: Step S1.6 and Step S1.7 are omitted, and Step S1.5 is replaced by "under an argon environment at room temperature and pressure, spin-coating a nano ZnO2 having a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer; 0.85 Mg 0.15 O-ethanol solution, and then placed in a constant temperature heat treatment at 60 ° C to solidify into a film to obtain an electronic functional layer.

[0185] Experimental example

[0186] The performance of the optoelectronic devices in Examples 1 to 12 and the comparative examples was tested respectively, and the voltage, current, brightness, luminescence spectrum and other parameters of each optoelectronic device were obtained by detecting and obtaining key parameters such as the maximum external quantum efficiency and power efficiency, and the device life of each optoelectronic device was tested using IVL optical property measurement equipment (including Ocean Optics USB2000, LabView-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems, etc.). Then, key parameters such as the maximum external quantum efficiency and power efficiency were calculated, and the device life of each optoelectronic device was tested using a life test equipment.

[0187] The maximum current efficiency (CE) of each photoelectric device in the first state and the second state is detected. max , cd / A) and device life. The first state is the state of the optoelectronic device after it is packaged, and the second state is the state of the packaged optoelectronic device after it is left at room temperature, pressure and 50% humidity for 200 hours.

[0188] The current efficiency test method is: intermittently collect the brightness value of the photoelectric device in the range of 0V to 8V driving voltage, and collect the luminous area of ​​0.0314cm 2 The initial voltage value of the brightness collection is 3V, and the brightness is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the photoelectric device under the collection conditions, and the maximum current efficiency (CE max ,cd / A).

[0189] The device life test method includes the following steps: under the drive of a constant current (2mA), a 128-channel QLED life test system is used to perform electroluminescence life analysis on each photoelectric device, and the time required for each photoelectric device to decay from the maximum brightness to 95% (T95, h) is recorded. The time required for the brightness of each photoelectric device to decay from 100% to 95% at a brightness of 1000nit is calculated by a decay fitting formula (T95@1000nit, h).

[0190] During the performance test, three parallel samples were set for each photoelectric device, and the test average value of the three parallel samples was taken for each performance test parameter. The performance test results of each photoelectric device under 25°C environment are shown in Table 1 below:

[0191] Table 1 Summary of performance test results of optoelectronic devices in Examples 1 to 12 and Comparative Examples

[0192]

[0193]

[0194] Note: Lifetime fluctuation rate (%) = (T95@1000nit in the first state - T95@1000nit in the second state) / T95@1000nit in the first state × 100%;

[0195] Efficiency fluctuation rate (%) = (CE of the first state max —CE of the second state max ) / CE of the first state max ×100%.

[0196] It can be seen from Table 1 that the comprehensive performance of the optoelectronic devices in Examples 1 to 12 has significant advantages over the optoelectronic devices in the comparative example, which is specifically manifested in that the device life and current efficiency of the optoelectronic devices in Examples 1 to 12 are higher. For example, in the first state, the T95@1000nit of the optoelectronic device in Example 8 is 3.47 times that of the optoelectronic device in the comparative example, and the CE of the optoelectronic device in Example 8 is 1.34 times that of the optoelectronic device in the comparative example. max is the CE of the optoelectronic device in the comparative example max In the second state, the T95@1000nit of the optoelectronic device in Example 8 is 2.66 times that of the optoelectronic device in the comparative example, and the CE max is the CE of the optoelectronic device in the comparative example maxIn addition, the storage stability and performance stability of the optoelectronic devices in Examples 1 to 12 are better. The lifetime fluctuation rate of the optoelectronic devices in Examples 1 to 12 does not exceed 4.5%, and the efficiency fluctuation rate does not exceed 5%, while the lifetime fluctuation rate and efficiency fluctuation rate of the optoelectronic devices in the comparative example are both over 10%. For the optoelectronic devices in the comparative example, T95@1000nit and CE max Both are significantly higher than T95@1000nit and CE in the first state max , indicating that the optoelectronic device in the comparative example has undergone obvious "positive aging" phenomenon.

[0197] This shows that an auxiliary layer is added between the electronic functional layer and the cathode, the material of the auxiliary layer includes the second metal, the material of the cathode includes the first metal, and the reducibility of the first metal is higher than that of the second metal, which can avoid chemical reaction between the cathode and the electronic functional layer, improve the stability of the electronic functional layer, and thus improve the performance stability of the optoelectronic device. In addition, in the process of forming the electronic functional layer, the deposited electronic functional material is passivated, which can further improve the performance stability of the optoelectronic device.

[0198] The above is a detailed introduction to an optoelectronic device, a method for preparing an optoelectronic device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A photoelectric device, characterized in that: include: An anode and a cathode arranged opposite to each other; An electronic functional layer, disposed between the cathode and the anode; as well as An auxiliary layer, disposed between the electronic functional layer and the cathode; The material of the cathode includes a first metal, the material of the auxiliary layer includes a second metal, and the reducing property of the first metal is higher than that of the second metal.

2. The optoelectronic device according to claim 1, characterized in that: The material of the electronic functional layer includes an undoped first metal oxide and / or a doped second metal oxide; wherein the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; and / or The thickness of the auxiliary layer is 1 nm to 5 nm; and / or The material of the cathode is a first metal, and the material of the auxiliary layer is a second metal.

3. The optoelectronic device according to claim 1, characterized in that: The work function of the first metal is 2.8 eV to 4.3 eV; and / or The first metal is selected from one or more of Ag, Al, Li, Mg, Ca and In; and / or The work function of the second metal is 4.5 eV to 5.2 eV; and / or The second metal is selected from one or more of Mo, Ru, Rh, Pd, Sn, Sb and Te.

4. The optoelectronic device according to any one of claims 1 to 3, characterized in that: The optoelectronic device further comprises a light-emitting layer disposed between the electronic functional layer and the anode, wherein the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTP One or more of X fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation; and / or The material of the anode includes one or more of a third metal, a carbon material and a third metal oxide; wherein the third metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the third metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or The photoelectric device also includes a hole functional layer arranged between the anode and the electronic functional layer, and the material of the hole functional layer includes a non-doped first inorganic compound, a doped second inorganic compound, poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid), copper phthalocyanine, phthalocyanine titanium oxide, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline , 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] triphenylamine, 4,4',4'-tri(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-( one or more of: N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene; Among them, the undoped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or the doped second inorganic compound is a main inorganic compound doped with a second doping element, and the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

5. A method for preparing a photoelectric device, characterized in that: The steps include: providing a bottom electrode, and forming an electronic functional layer on one side of the bottom electrode; and forming a top electrode on a side of the electronic functional layer away from the bottom electrode; Wherein, the bottom electrode is an anode and the top electrode is a cathode, after the step of forming a light-emitting layer on one side of the bottom electrode and before the step of forming the top electrode, the preparation method further comprises the steps of: forming an auxiliary layer on a side of the electronic functional layer away from the bottom electrode; the top electrode is formed on a side of the auxiliary layer away from the electronic functional layer; or, the bottom electrode is a cathode and the top electrode is an anode, before the step of forming an electronic functional layer on one side of the bottom electrode, the preparation method further comprises the steps of: forming an auxiliary layer on one side of the bottom electrode; the electronic functional layer is formed on a side of the auxiliary layer away from the bottom electrode; The material of the cathode includes a first metal, the material of the auxiliary layer includes a second metal, and the first metal has a higher reducibility than the second metal.

6. The preparation method according to claim 5, characterized in that: The method for forming the electronic functional layer comprises the steps of: depositing a dispersion containing an electronic functional material, the electronic functional material comprising an undoped first metal oxide and / or a doped second metal oxide; and Drying the deposited dispersion to obtain an electronic functional layer; The method for forming the electronic functional layer further comprises the steps of: placing the electronic functional material in a gas atmosphere for passivation treatment, and the end time point of the passivation treatment is no earlier than the end time point of the drying treatment; The gas atmosphere includes reducing gas and / or halogen gas.

7. The preparation method according to claim 6, characterized in that: The start time of depositing the dispersion is used as the start time point of forming the electronic functional layer, and obtaining the electronic functional layer is used as the end time point of forming the electronic functional layer, and the entire time period from the start time point to the end time point is T, wherein the dispersion is deposited in a first time period, the drying process is performed in a second time period, and the passivation process is performed in a third time period, there is no overlapping time period between the first time period and the second time period, and the relationship between the third time period and the first time period, the relationship between the third time period and the second time period, and / or the relationship between the third time period and T is any one of the following: (a) the third time period completely overlaps with T; (b) the third time period is after the second time period; (c) the third time period at least partially overlaps with the first time period, and the third time period at least partially overlaps with the second time period; (d) The third time period does not overlap with the first time period at all, and the third time period at least partially overlaps with the second time period.

8. The preparation method according to claim 6, characterized in that: The gas atmosphere comprises a reducing gas and a halogen gas, and the volume ratio of the reducing gas to the halogen gas is 1:(2-3); and / or The reducing gas is selected from one or more of NH3, H2, CO, H2S, SO and SO2; and / or The halogen gas is selected from one or more of Cl2 and Br2; and / or The passivation treatment time is 20min to 120min; and / or The thickness of the electronic functional layer is 10nm-100nm.

9. The preparation method according to claim 6, characterized in that: The drying treatment includes laser annealing treatment; in the laser annealing treatment, the annealing depth does not exceed the thickness of the electronic functional layer; and / or, the wavelength of the laser is 515nm-532nm; and / or, the laser spot is linear, the line width is 0.10mm-0.13mm, and the line length is 9.7mm-10.1mm; and / or, the laser scanning speed is 1mm / s-5mm / s; and / or, the deposited dispersion is subjected to 4-7 overlapping scanning annealing; and / or, the laser annealing treatment is pulsed, and the single pulse laser energy density is 700mJ / cm 2 ~800mJ / cm 2 ; and / or The non-doped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or The doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; and / or The method for preparing the optoelectronic device further comprises the steps of: forming a light-emitting layer between the electronic functional layer and the anode, and / or forming a hole functional layer between the electronic functional layer and the anode; Wherein, the material of the light-emitting layer includes organic light-emitting materials and / or quantum dots; and / or, the material of the hole functional layer includes inorganic compounds, inorganic compounds containing doping elements, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-di(9-carbazole) Biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazole-9- triphenylamine, 4,4',4'-tri(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9, One or more of 9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, wherein the second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and the second metal element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements; and / or The work function of the first metal is 2.8 eV to 4.3 eV; and / or The first metal is selected from one or more of Ag, Al, Li, Mg, Ca and In; and / or The work function of the second metal is 4.5 eV to 5.2 eV; and / or The second metal is selected from one or more of Mo, Ru, Rh, Pd, Sn, Sb and Te.

10. An electronic device, characterized in that: The invention comprises a photoelectric device as claimed in any one of claims 1 to 4, or a photoelectric device prepared by the preparation method as claimed in any one of claims 5 to 9.

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