Thin film deposition equipment

Abstract

The invention provides thin film deposition equipment which comprises a cavity, a lining and a valve box, a reaction cavity is defined by the cavity, and a mounting cavity communicated with the reaction cavity is formed in one side of the cavity; the bushing is embedded into the mounting cavity, and a via hole is formed in the top end of the bushing; the valve box is fixedly arranged on the side, adjacent to the lining, of the cavity and seals or opens the installation cavity. The valve box is provided with a through hole communicating with the via hole. The protective gas flows from the through hole to the via hole and forms a protective flow field in the lining. The protective gas is introduced into the outside of the valve box and flows into the lining, so that the protective gas occupies most of the lining space in front of the valve plate of the valve box, reaction gas is difficult to reach the space, close to the valve box, of the lining and the position of the valve plate of the valve box, the phenomenon that many films appear on the lining and the valve plate of the valve box is avoided, and the service life of the valve box is prolonged. When the wafer passes through the lining and the valve box, no film particles fall on the surface of the wafer, so that the number of the particles of the wafer is accurately controlled, and the film deposition quality of the wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor production, and in particular to a thin film deposition device. Background Art

[0002] Semiconductor coating technology is a key technology for forming thin films with specific functions on the surface of semiconductors. This process is usually carried out in a vacuum environment. Metals, non-metals or other compound materials are deposited in the form of gas phase on the surface of semiconductor materials by physical or chemical methods to form a dense film. These films play a vital role in the manufacturing process of semiconductor devices and play a decisive role in the performance, structural integrity, miniaturization and integration of the devices.

[0003] The semiconductor wafer thin film deposition process has particularly strict requirements on the number of particles. However, under actual process conditions, due to the structural characteristics of the lower exhaust chamber, the valve plate of the gate valve is often difficult to clean, resulting in the problem of thin film on the valve plate. As a result, during the wafer transmission process, when the valve plate of the gate valve is opened, the gas in the vacuum chamber wafer transmission platform flows to the thin film deposition module, and the particles at the valve plate of the gate valve will be blown off to the wafer surface, seriously affecting the process control of the number of wafer particles. Summary of the invention

[0004] An embodiment of the present invention provides a thin film deposition device to accurately control the number of particles on a wafer and improve the quality of thin film deposition on the wafer.

[0005] The present invention provides a thin film deposition device, comprising:

[0006] A cavity body, the cavity body encloses a reaction chamber, and one side of the cavity body is provided with a mounting cavity connected to the reaction chamber;

[0007] A bushing, the bushing is embedded in the installation cavity, and a through hole is provided at the top of the bushing;

[0008] A valve box, the valve box is fixedly arranged on a side of the cavity adjacent to the bushing and seals or opens the installation cavity, and the valve box is provided with a through hole communicating with the through hole;

[0009] Wherein, the protective gas flows from the through hole to the via hole and forms a protective flow field inside the bushing.

[0010] In the thin film deposition device provided by the present invention, the through hole is located in the central plane of the bushing, and a plurality of via holes are provided. The plurality of via holes are spaced apart along the length direction of the bushing, and the apertures of the plurality of via holes distributed toward both sides from the center of the bushing increase gradually.

[0011] In the thin film deposition device provided by the present invention, the corners of the bushing are rounded structures.

[0012] In the thin film deposition device provided by the present invention, air uniformity holes are provided on both side corners of the top end of the bushing, and the air uniformity holes communicate with the through hole and the internal space of the bushing.

[0013] In the thin film deposition device provided by the present invention, a clamping portion is provided on a side of the bushing away from the valve box, the clamping portion is extended downward from the bottom end of the bushing, and the clamping portion is clamped with the cavity wall of the installation cavity.

[0014] In the thin film deposition device provided by the present invention, the thin film deposition device further comprises a clamping block, one end of which is fixedly connected to the cavity, and the other end of which is clamped to the valve box.

[0015] In the thin film deposition device provided by the present invention, a first groove is provided at the bottom end of the clamping block, the notch of the first groove faces the direction of the cavity, and a second groove is provided at the edge of the valve box, the notch of the second groove faces away from the direction of the cavity, and the second groove is clamped with the first groove.

[0016] In the thin film deposition device provided by the present invention, the cavity is also provided with a plurality of pin holes, and the plurality of pin holes are located on both sides of the installation cavity. The valve box is provided with a plurality of positioning columns on the side facing the cavity, and the positioning columns are positioned and connected with the pin holes.

[0017] In the thin film deposition device provided by the present invention, the thin film deposition device further comprises a flange, the flange is fixedly mounted on the top of the valve box, the flange is provided with a fixing hole, and the fixing hole is used to connect an external air pipe and the through hole.

[0018] In the thin film deposition device provided by the present invention, the thin film deposition device further comprises a sealing ring, the sealing ring is fixedly arranged between the flange and the valve box, and the sealing ring is used to seal the flange and the valve box.

[0019] The present application sets a flow channel for protective gas between the valve box and the bushing, introduces protective gas from the outside of the valve box and allows the protective gas to flow through the through hole, the inside of the valve box, and the through hole to the inside of the bushing, so that the protective gas occupies most of the bushing space in front of the valve plate of the valve box, making it difficult for the reaction gas to reach the space of the bushing close to the valve box and the valve plate position of the valve box, avoiding the phenomenon of more thin films on the side of the bushing close to the valve box and the valve plate of the valve box, so that when the wafer passes through the bushing and the valve box, no film particles will fall to the surface of the wafer, thereby affecting the control of the number of film particles on the surface of the wafer, so as to accurately control the number of particles on the wafer and improve the quality of wafer thin film deposition; at the same time, the number of film particles on the side of the bushing close to the valve box and the valve plate of the valve box is reduced, the cleaning time of the thin film deposition equipment is reduced, the working efficiency of the thin film deposition equipment during cleaning is improved, the problem of difficulty in cleaning is avoided, and the production efficiency of the thin film deposition equipment is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0021] Figure 1 is a cross-sectional view of a thin film deposition device according to an embodiment of the present invention;

[0022] Figure 2 for Figure 1 The enlarged view of point A in the middle;

[0023] Figure 3 A structural diagram of a bushing in an embodiment of the present invention;

[0024] Figure 4 Another structural diagram of the bushing in the embodiment of the present invention;

[0025] Figure 5 It is a structural diagram of the valve box in an embodiment of the present invention;

[0026] Figure 6 A structural diagram of a thin film deposition device according to an embodiment of the present invention;

[0027] Figure 7 for Figure 6 The enlarged view of point B in the middle;

[0028] Figure 8 Schematic diagram of a thin film deposition device in an embodiment of the present invention.

[0029] The reference numerals in the figures are:

[0030] 1. Thin film deposition equipment; 10. Cavity; 11. Reaction chamber; 12. Mounting chamber; 13. Pin hole; 20. Bushing; 21. Through hole; 22. Air-distributing hole; 23. Clamping part; 30. Valve box; 31. Through hole; 32. Second groove; 33. Positioning column; 40. Clamping block; 41. First groove; 50. Flange; 51. Fixing hole; 60. Sealing ring. DETAILED DESCRIPTION

[0031] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. Now, in conjunction with the accompanying drawings, the preferred embodiments of the present invention are described in detail.

[0032] Reference Figures 1 to 8 As shown, it shows an embodiment of the thin film deposition device 1 of the present invention. The thin film deposition device 1 includes a cavity 10, a bushing 20 and a valve box 30. The cavity 10 encloses a reaction chamber 11, and a mounting cavity 12 connected to the reaction chamber 11 is provided on one side of the cavity 10; the bushing 20 is embedded in the mounting cavity 12, and a through hole 21 is provided on the top of the bushing 20; the valve box 30 is fixedly arranged on one side of the cavity 10 adjacent to the bushing 20 and seals or opens the mounting cavity 12, and the valve box 30 is provided with a through hole 31 connected to the through hole 21; wherein the protective gas flows from the through hole 31 to the through hole 21 and forms a protective flow field inside the bushing 20.

[0033] Specifically, the chamber 10 is used to form a closed space so that the wafer can undergo a thin film deposition reaction in the closed space; a variety of structural parts are installed inside and on the chamber 10, which also play a supporting role; in the semiconductor production process, before and after the thin film deposition, the wafer will be transferred to the chamber 10 of the thin film deposition equipment 1 platform by the robot in the vacuum chamber 10, so the chamber 10 encloses a reaction chamber 11, and the reaction chamber 11 is used to place the wafer so that the wafer is in the reaction chamber 11. To deposit a thin film, a reaction gas is introduced into the reaction chamber 11, where the reaction gas refers to a gas used to deposit a thin film on the surface of the wafer; and a mounting chamber 12 is further provided on one side of the chamber 10, wherein the mounting chamber 12 is formed by a depression of one side of the chamber 10 toward the center of the chamber 10, and the mounting chamber 12 is connected to the reaction chamber 11, that is, the wafer can be transferred to the reaction chamber 11 through the mounting chamber 12, thereby enabling the wafer to enter the chamber 10 from the outside of the chamber 10 and perform thin film deposition in a vacuum environment.

[0034] The valve box 30 is a channel connecting the wafer transfer platform and the thin film deposition platform of the vacuum chamber 10, and is also a switch for transferring the wafer into the chamber 10. The wafer transfer platform of the vacuum chamber 10 is located outside the gas, and is mainly used to transfer the wafer to other action positions; the thin film deposition platform refers to a device for depositing a thin film on the surface of the wafer, specifically the chamber 10 and the reaction chamber 11 formed; in order to ensure that the wafer is in a vacuum environment during thin film deposition, a valve box 30 is provided between the thin film deposition platform and the vacuum chamber 10. A valve box 30 is arranged between the two platforms, the valve box 30 is fixedly arranged on one side of the cavity 10, and is arranged adjacent to the bushing 20, that is, the bushing 20 is fixedly arranged on the side of the installation cavity 12 close to the cavity opening, the valve box 30 is located on the side of the bushing 20 close to the cavity opening, the valve box 30 is located outside the cavity 10, and the bushing 20 is located inside the cavity 10; the valve box 30 is arranged around the cavity opening of the installation cavity 12, the valve box 30 is used to seal or open the installation cavity 12, and the valve The box 30 is provided with a valve plate inside. The valve box 30 is opened to connect the wafer transfer platform and the thin film deposition platform of the vacuum chamber 10, that is, to connect the outside of the chamber 10 and the installation chamber 12 and the reaction chamber 11, so as to ensure the transfer of the wafer, so that the wafer can be transferred from the outside of the chamber 10 through the valve box 30 and the installation chamber 12 to the reaction chamber 11; when the thin film is deposited on the wafer, the reaction gas will be in the installation chamber 12 near the valve box 30 and the valve box 30 near the installation chamber 12. A thin film is generated on one side of the cavity 12. After the thin film is deposited on the wafer, when the valve plate of the valve box 30 is opened, due to the pressure difference between the film transfer platform of the vacuum chamber 10 and the reaction chamber 11 and the installation chamber 12, the gas at the connection position between the installation chamber 12 and the valve box 30 will be pressed into the reaction chamber 11, so that the particles at the place of the installation chamber 12 close to the valve box 30 and the side of the valve box 30 close to the installation chamber 12 are blown to the wafer surface, thereby affecting the control of the number of particles on the wafer surface.

[0035] Therefore, a through hole 31 is provided on the valve box 30, and the through hole 31 is used to connect the external gas pipeline and the inside of the bushing 20, so as to pass the protective gas into the inside of the bushing 20. The protective gas does not react with the reaction gas and can prevent the reaction gas from flowing toward the valve box 30. In this embodiment, the protective gas is nitrogen.

[0036] The thin film deposition device 1 includes a sleeve 20, which ensures that the temperature of the channel from the valve box 30 to the heating plate in the reaction chamber 11 for transferring wafers is stable. The sleeve 20 is embedded in the installation cavity 12, and the sleeve 20 is connected with the reaction chamber 11 and the valve box 30. A through hole 21 is provided at the top of the sleeve 20, and the through hole 21 is connected with the through hole 31, so that the protective gas can flow to the through hole 21 through the through hole 31 and finally enter the interior of the sleeve 20.

[0037] Among them, when the thin film deposition equipment 1 is started, the valve box 30 seals the installation cavity 12, and the reaction gas is introduced into the reaction cavity 11. At this time, most of the reaction gas flows to the wafer in the reaction cavity 11, and a part of it flows into the installation cavity 12, especially the space between the bushing 20 and the valve box 30; at the same time, through the through hole 31, a protective gas is introduced into the interior of the valve box 30 and the installation cavity 12, the protective gas flows between the interior of the valve box 30 and the installation cavity 12, and flows toward the direction of the bushing 20, and flows into the bushing 20 through the through hole 21. The protective gas forms a protective flow field inside the bushing 20 and on the side of the valve box 30 close to the bushing 20. At this time, the protective flow field can inhibit the reaction gas from flowing to the path of the bushing 20 and the valve box 30, thereby preventing the reaction gas from flowing to the surface of the valve box 30 and the bushing 20.

[0038] The present application sets a protective gas flow channel between the valve box 30 and the bushing 20, introduces protective gas from the outside of the valve box 30 and allows the protective gas to flow through the through hole 31, the inside of the valve box 30, and the through hole 21 to the inside of the bushing 20, so that the protective gas occupies most of the space of the bushing 20 in front of the valve plate of the valve box 30, making it difficult for the reaction gas to reach the space of the bushing 20 close to the valve box 30 and the valve plate position of the valve box 30, thereby avoiding the side of the bushing 20 close to the valve box 30 and the valve plate of the valve box 30. The phenomenon of more thin films ensures that when the wafer passes through the bushing 20 and the valve box 30, no film particles will fall onto the wafer surface, thereby affecting the control of the number of film particles on the wafer surface, so as to accurately control the number of particles on the wafer and improve the quality of wafer thin film deposition; at the same time, the number of film particles on the side of the bushing 20 close to the valve box 30 and the valve plate of the valve box 30 is reduced, the cleaning time of the thin film deposition equipment 1 is reduced, the working efficiency of the thin film deposition equipment 1 during cleaning is improved, the problem of difficulty in cleaning is avoided, and the production efficiency of the thin film deposition equipment 1 is improved.

[0039] In one embodiment, referring to Figure 3As shown, the through hole 31 is located in the center plane of the bushing 20, and a plurality of through holes 21 are provided. The plurality of through holes 21 are spaced apart along the length direction of the bushing 20, and the apertures of the plurality of through holes 21 distributed toward both sides from the center of the bushing 20 increase gradually. Specifically, the through hole 31 passes through from the top of the valve box 30 to the inside of the valve box 30, and the through hole 31 is located on the side of the valve plate of the valve box 30 close to the bushing 20, and the through hole 31 of the valve box 30 is in the same plane as the center plane of the bushing 20. When the valve box 30 seals the installation cavity 12, the protective gas passes through the through hole 31 from above the through hole 31 into the valve box 30 and the installation cavity 12 and is located above the bushing 20. The protective gas flows toward the through hole 21 of the bushing 20 and flows into the internal space of the bushing 20 through the through hole 21. In order to ensure that the protective gas flows to various positions of the internal space of the bushing 20 and the airflow is uniform, at the top of the bushing 20 A plurality of the via holes 21 are provided, and the plurality of via holes 21 are spaced apart along the length direction of the bushing 20, so that the protective gas can flow through the plurality of via holes 21 and enter various positions of the internal space of the bushing 20; at the same time, the plurality of via holes 21 are divided into two groups with the center line of the bushing 20 as the axis of symmetry, and the aperture of each group of the plurality of via holes 21 gradually increases from close to the center line toward the edge of the bushing 20, that is, the aperture of the plurality of via holes 21 is a gradual structure, which gradually increases from the center of the bushing 20 toward both sides; if the apertures of the plurality of via holes 21 are designed to be consistent, the flow rate of the protective gas in the center plane of the bushing 20 will be larger, and the flow rate of the protective gas on both sides will be smaller, resulting in uneven airflow. The gradient aperture in this embodiment gradually increases from the center to both sides. The smaller the aperture of the via 21, the greater the flow resistance. Therefore, the gradient aperture will allow more protective gas to flow to the vias 21 with smaller flow resistance and larger aperture on both sides, so that the flow rate of the protective gas in the via 21 close to the center of the bushing 20 and the via 21 on both sides is consistent, and the protective gas is evenly diffused in the internal space of the bushing 20, thereby improving the structural stability of the thin film deposition equipment 1 and improving product quality.

[0040] In a specific embodiment, refer to Figure 3 As shown, the corners of the bushing 20 are rounded. Specifically, the shape of the bushing 20 is adapted to the shape of the mounting cavity 12, and the side of the bushing 20 close to the heating plate inside the reaction chamber 11 is a semicircular arc structure to adapt to the structure of the heating plate. The bushing 20 is a rectangular structure as a whole, and the corners of the bushing 20 are set to rounded structures so that the protective gas can flow more smoothly in the internal space of the bushing 20, improve the coverage of the protective gas, and avoid the protective gas failing to flow to the corners of the bushing 20, so as to form a thin film at the corners of the bushing 20 and affect the quality of the wafer.

[0041] In one embodiment, referring to Figure 3 As shown, the corners on both sides of the top of the bushing 20 are provided with uniform air holes 22, and the uniform air holes 22 connect the through hole 31 and the internal space of the bushing 20. Specifically, the top of the bushing 20 is provided with a plurality of via holes 21, and the plurality of via holes 21 are arranged at intervals along the length direction of the bushing 20, and the via holes 21 are arranged vertically at the top of the bushing 20, so that the protective gas flows to the internal space of the bushing 20 in the vertical direction; since the corners of the bushing 20 are located on both sides of the bushing 20, the protective gas at the corners of the bushing 20 is less, in order to ensure the flow of the protective gas at the corners of the bushing 20, uniform air holes 22 are provided at the corners of the bushing 20, and the uniform air holes 22 pass through both sides of the top of the bushing 20, so that the protective gas can flow at the corners of the bushing 20, so as to avoid the reaction gas from generating a thin film at the corners of the bushing 20, further improve the range of the protective flow field, and improve the wafer quality.

[0042] More specifically, the corners of the bushing 20 are set to a rounded structure, and a plurality of air uniforming holes 22 are provided on the two rounded corners at the top of the bushing 20. The plurality of air uniforming holes 22 are arranged at intervals along the width direction of the bushing 20, and the air uniforming holes 22 are arranged adjacent to the through holes 21. The two groups of air uniforming holes 22 at the two side corners of the top of the bushing 20 are respectively located at the head and tail ends of the plurality of through holes 21, thereby cooperating with the through holes 21 to guide the protective gas to the internal space of the bushing 20, and the apertures of the plurality of air uniforming holes 22 are consistent.

[0043] In a specific embodiment, refer to Figure 4 As shown, a clamping portion 23 is provided on one side of the bushing 20 away from the valve box 30 . The clamping portion 23 is extended downward from the bottom end of the bushing 20 , and the clamping portion 23 is clamped with the cavity wall of the installation cavity 12 . Specifically, the bushing 20 is embedded in the installation cavity 12, and the bushing 20 is fixed on a side of the installation cavity 12 close to the valve box 30. In order to ensure the stability of the fixation of the bushing 20, a clamping portion 23 is also provided on the side of the bushing 20 away from the valve box 30. The clamping portion 23 is extended downward from the bottom end of the bushing 20, and the clamping portion 23 is clamped and fixed with the cavity wall of the installation cavity 12, so that the side of the bushing 20 away from the valve box 30 is fixed in the installation cavity 12 to limit the bushing 20 and prevent the bushing 20 from moving in the installation cavity 12, thereby ensuring that the structure of the bushing 20 is more stable when the wafer is transmitted in the bushing 20 and the valve box 30; more specifically, the clamping portion 23 is extended along the length direction of the bushing 20 to further improve the stability of the bushing 20.

[0044] More specifically, the cavity 10 is also provided with a lower exhaust channel, which extends downward from the bottom end of the installation cavity 12 to the bottom end of the cavity 10, wherein the reaction gas and the protective gas flow along the lower exhaust channel to the outside of the cavity 10, thereby ensuring the flow direction of the reaction gas and the protective gas and improving the structural stability of the thin film deposition equipment 1.

[0045] In one embodiment, referring to Figure 1 , Figure 6 As shown, the thin film deposition device 1 further includes a clamp block 40, one end of which is fixedly connected to the cavity 10, and the other end of which is clamped with the valve box 30. Specifically, the valve box 30 is fixed to the cavity 10 through the clamp block 40, the clamp block 40 is fixedly connected to the cavity 10 on one side facing the cavity 10, and the other side of the clamp block 40 is clamped with the valve box 30, and the clamp block 40 fixes the valve box 30 between the clamp block 40 and the cavity 10. The assembly method of the cavity 10 and the valve box 30 in this embodiment is simple and has high assembly efficiency.

[0046] In a specific embodiment, refer to Figure 7 As shown, the bottom end of the clamp block 40 is provided with a first groove 41, the notch of the first groove 41 faces the direction of the cavity 10, the top end of the valve box 30 is provided with a second groove 32, the notch of the second groove 32 faces away from the direction of the cavity 10, and the second groove 32 and the first groove 41 are engaged. Specifically, the bottom end of the clamp block 40 is engaged and fixed with the top end of the valve box 30, the bottom end of the clamp block 40 is provided with a first groove 41, the notch of the first groove 41 faces the direction of the cavity 10, the top end of the valve box 30 is provided with a second groove 32, the notch of the second groove 32 faces away from the direction of the cavity 10, that is, the first groove 41 and the second groove 32 are arranged opposite to each other, so when the clamp block 40 and the valve box 30 are assembled, the first groove 41 and the second groove 32 are engaged, so as to fix the valve box 30 on the clamp block 40, and the assembly method of the clamp block 40 and the valve box 30 is simple and the assembly efficiency is high.

[0047] More specifically, an opening is further provided in the middle of the clamp block 40, and a threaded hole is provided at a position corresponding to the opening in the cavity 10. The clamp block 40 is fixed to the cavity 10 by passing one end of a screw through the opening and threadedly connected to the threaded hole, thereby achieving a fixed connection among the clamp block 40, the cavity 10 and the valve box 30, and the connection method is simple.

[0048] More specifically, four clamping blocks 40 are provided, and the four clamping blocks 40 are respectively fixedly connected to the circumferential edges of the valve box 30 to fix the valve box 30 and the cavity 10 .

[0049] In one embodiment, referring to Figure 8 As shown, the cavity 10 is also provided with a plurality of pin holes 13, which are located on both sides of the installation cavity 12, and the valve box 30 is provided with a plurality of positioning posts 33 on the side facing the cavity 10, and the positioning posts 33 are connected with the pin holes 13 in a positioning manner. Specifically, the cavity 10 is provided with a plurality of pin holes 13, which are located on both sides of the installation cavity 12, and the pin holes 13 are formed by the inward depression of one side of the cavity 10; the valve box 30 is provided with a plurality of positioning posts 33, which are formed by the protrusion of the side of the valve box 30 facing the cavity 10 in the direction of the cavity 10, and the plurality of pin holes 13 and the plurality of positioning posts 33 are arranged oppositely, and the positioning posts 33 are connected with the pin holes 13 in a positioning manner; when assembling the cavity 10 and the valve box 30, the positioning posts 33 are first aligned with the pin holes 13 for preliminary positioning, and then the valve box 30 and the cavity 10 are fixed by the clamping block 40.

[0050] In this embodiment, the positioning connection between the pin hole 13 and the positioning column 33 can perform preliminary positioning on the valve box 30 to improve assembly efficiency, and can also limit the degree of freedom of the valve box 30 to improve the stability of the fixation of the valve box 30 and the cavity 10.

[0051] In one embodiment, referring to Figure 1 to Figure 2 As shown, the thin film deposition device 1 further includes a flange 50, which is fixed at the top of the valve box 30, and the flange 50 is provided with a fixing hole 51, and the fixing hole 51 is used to connect the external air pipe and the through hole 31. Specifically, the thin film deposition device 1 further includes a flange 50, which is used to connect the external air pipe and the valve box 30, and the external air pipe is used to pass the protective gas, the flange 50 is fixed at the top of the valve box 30, and the flange 50 is provided with a fixing hole 51 that passes through the upper and lower ends thereof, and the fixing hole 51 is connected to the through hole 31, that is, the fixing hole 51 is located above the through hole 31, one end of the external air pipe is connected to the fixing hole 51, and the fixing hole 51 connects the external air pipe and the through hole 31, therefore, the external air pipe is fixed on the flange 50, and the external air pipe passes the protective gas into the fixing hole 51, and flows to the through hole 31 until it flows to the inside of the valve box 30 and the inside of the bushing 20. In this embodiment, the flange 50 is a structure for connecting the external air pipe and the through hole 31 of the valve box 30, thereby improving the structural stability of the connection between the valve box 30 and the external air pipe.

[0052] In a specific embodiment, refer to Figure 2As shown, the thin film deposition device 1 further includes a sealing ring 60, which is fixed between the flange 50 and the valve box 30, and is used to seal the flange 50 and the valve box 30. Specifically, a sealing ring 60 is fixed between the flange 50 and the valve box 30, and the valve box 30 is provided with a mounting groove, which is extended along the circumference of the through hole 31, and the mounting groove is formed by the top of the valve box 30 being recessed downward, the sealing ring 60 is embedded in the mounting groove, and then the flange 50 is fixed at the top of the valve box 30, and the flange 50 is located above the sealing ring 60, and the sealing ring 60 is abutted against the bottom end of the flange 50, and the sealing ring 60 seals the connection between the flange 50 and the valve box 30, ensuring that the flange 50 and the valve box 30 protect the gas from leakage during ventilation, so as to improve the structural stability of the thin film deposition device 1.

[0053] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A thin film deposition device, characterized in that: include: A cavity body, the cavity body encloses a reaction chamber, and one side of the cavity body is provided with a mounting cavity connected to the reaction chamber; A bushing, the bushing is embedded in the installation cavity, and a through hole is provided at the top of the bushing; A valve box, the valve box is fixedly arranged on a side of the cavity adjacent to the bushing and seals or opens the installation cavity, and the valve box is provided with a through hole communicating with the through hole; Wherein, the protective gas flows from the through hole to the via hole and forms a protective flow field inside the bushing.

2. The thin film deposition device according to claim 1, characterized in that: The through hole is located in the central plane of the bushing, and a plurality of via holes are provided. The plurality of via holes are spaced apart along the length direction of the bushing, and the apertures of the plurality of via holes distributed from the center of the bushing toward both sides increase gradually.

3. The thin film deposition device according to claim 1, characterized in that: The corners of the bushing are rounded.

4. The thin film deposition device according to any one of claims 1 to 3, characterized in that: Air-uniform holes are provided at the corners on both sides of the top end of the bushing, and the air-uniform holes are connected with the through hole and the inner space of the bushing.

5. The thin film deposition device according to claim 1, characterized in that: A clamping portion is provided on one side of the bushing away from the valve box. The clamping portion is extended downward from the bottom end of the bushing and is clamped with the cavity wall of the installation cavity.

6. The thin film deposition device according to claim 1, characterized in that: The thin film deposition device further comprises a clamping block, one end of which is fixedly connected to the cavity, and the other end of which is clamped to the valve box.

7. The thin film deposition device according to claim 6, characterized in that: A first groove is provided at the bottom end of the clamping block, the notch of the first groove faces the direction of the cavity, and a second groove is provided at the edge of the valve box, the notch of the second groove faces away from the direction of the cavity, and the second groove is clamped with the first groove.

8. The thin film deposition device according to claim 1, characterized in that: The cavity is further provided with a plurality of pin holes, and the plurality of pin holes are located on both sides of the installation cavity. A plurality of positioning columns are provided on a side of the valve box facing the cavity, and the positioning columns are positioned and connected with the pin holes.

9. The thin film deposition device according to claim 1, characterized in that: The thin film deposition device further comprises a flange, which is fixedly mounted on the top of the valve box. The flange is provided with a fixing hole, and the fixing hole is used to connect an external air pipe and the through hole.

10. The thin film deposition device according to claim 9, characterized in that: The thin film deposition device further comprises a sealing ring, which is fixed between the flange and the valve box and is used to seal the flange and the valve box.

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