High-bandwidth packaging structure with high heat dissipation and manufacturing method thereof

Abstract

The invention provides a high-bandwidth packaging structure with high heat dissipation and a manufacturing method thereof, and the method comprises the following steps: providing a packaging substrate which comprises an upper surface and a lower surface which are oppositely arranged; providing a chip, and welding the chip on the upper surface of the packaging substrate; providing an integrated board, mounting the integrated board above the chip, and forming a plurality of through holes and a window located right above the chip at a wiring-free position of the integrated board; a cooling fin is provided, the cooling fin is attached to the face, away from the packaging substrate, of the chip, the upper surface of the cooling fin penetrates through the window, and the upper surface of the cooling fin is not higher than the upper surface of the integrated board. A plurality of through holes and windows are formed in the positions, without wiring, of the integrated board, the heat dissipation glue layer is arranged on the face, away from the packaging substrate, of the chip, the silicon wafer or the copper sheet with the high heat dissipation coefficient is attached to the heat dissipation glue layer, the upper surface of the heat dissipation sheet is flush with the upper surface of the upper integrated board, and therefore on the premise that the packaging product is not thickened, the heat dissipation efficiency of the chip is greatly improved. And the heat dissipation performance of the high-broadband packaging product is improved.

Description

Technical Field

[0001] The present invention belongs to the field of packaging technology, and in particular relates to a high-bandwidth packaging structure with high heat dissipation and a manufacturing method thereof. Background Art

[0002] With the development of science and technology, the performance requirements of electronic products are getting higher and higher, which requires a higher bandwidth packaging structure to support. High-bandwidth packaging is an advanced packaging structure that stacks integrated boards on the basis of the original flip chip to achieve higher bandwidth. This packaging structure is widely used in current high-end electronic products. However, this packaging structure also has some problems. Due to its small size and high bandwidth, the gap between the upper integrated board and the chip can only be filled with small particles of resin with poor heat dissipation, which may cause overheating after long-term use, thus affecting the stability of the product.

[0003] To solve this problem, the current main methods are to increase the chip thickness, fill it with high heat dissipation resin, or use heat sinks and heat rings to improve the heat dissipation effect. However, although these methods improve the heat dissipation performance of high-bandwidth packages to a certain extent, their application is limited due to insufficient space.

[0004] In addition, these methods may also affect the thickness of the packaged product. For small-volume, high-bandwidth packages, improving the heat dissipation performance of high-bandwidth packages without increasing the thickness of the packaged product is an important issue facing current technology.

[0005] Therefore, it is necessary to provide an improved technical solution to address the above-mentioned deficiencies in the prior art.

[0006] It should be noted that the above introduction to the technical background is only for the convenience of providing a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. It cannot be considered that the above technical solutions are well known to those skilled in the art simply because they are described in the background technology section of the present application. Summary of the invention

[0007] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a high-bandwidth packaging structure with high heat dissipation and a manufacturing method thereof, so as to improve the heat dissipation performance of the high-bandwidth packaging structure without increasing the thickness of the packaging product.

[0008] To achieve the above objectives and other related objectives, the present invention provides a method for manufacturing a high-bandwidth packaging structure with high heat dissipation, the manufacturing method comprising the following steps:

[0009] Providing a packaging substrate, the packaging substrate comprising an upper surface and a lower surface arranged opposite to each other;

[0010] Providing a chip, and soldering the chip to the upper surface of the packaging substrate;

[0011] Providing an integrated board, mounting the integrated board on top of the chip, and opening a plurality of through holes and a window located directly above the chip at a position where there are no wiring on the integrated board;

[0012] A heat sink is provided and mounted on a side of the chip away from the packaging substrate. The upper surface of the heat sink passes through the window and is not higher than the upper surface of the integrated board.

[0013] Preferably, the integrated board is mounted on top of the chip via a plurality of copper core balls, and the interconnection between the integrated board and the packaging substrate is achieved via the copper core balls.

[0014] Preferably, a heat dissipation adhesive layer is formed between the heat sink and the chip, the heat dissipation adhesive layer is formed on a side of the chip away from the packaging substrate, and the heat sink is mounted on a side of the heat dissipation adhesive layer away from the chip.

[0015] Preferably, the heat dissipation adhesive layer formed includes a heat dissipation silver adhesive layer or a heat dissipation film.

[0016] Preferably, the upper surface of the heat sink is flush with the upper surface of the integrated board.

[0017] Preferably, the heat sink comprises a silicon sheet or a copper sheet.

[0018] Preferably, the manufacturing method further comprises: filling heat dissipation resin between the packaging substrate and the integrated board with glue.

[0019] The present invention also provides a high-bandwidth packaging structure with high heat dissipation, comprising a packaging substrate, a chip, an integrated board and a heat sink, wherein the packaging substrate comprises an upper surface and a lower surface arranged opposite to each other; the chip is located at a preset position on the upper surface of the packaging substrate; the integrated board is located on a side of the chip away from the packaging substrate, and a plurality of through holes and a window directly above the chip are provided on the integrated board; the heat sink is located on a side of the chip away from the packaging substrate, the upper surface of the heat sink passes through the window, and the upper surface of the heat sink is not higher than the upper surface of the integrated board.

[0020] Preferably, a heat dissipation adhesive layer is further included, and the heat dissipation adhesive layer is located between the chip and the heat sink.

[0021] Preferably, the upper surface of the heat sink is flush with the upper surface of the integrated board.

[0022] As described above, the high-bandwidth packaging structure with high heat dissipation and the manufacturing method thereof of the present invention have the following beneficial effects:

[0023] The present invention opens a plurality of through holes and windows at positions without routing on the integrated board, arranges a heat dissipation adhesive layer on a side of the chip away from the packaging substrate, mounts a silicon chip or a copper chip with a high heat dissipation coefficient on the heat dissipation adhesive layer, and the upper surface of the heat sink penetrates the window and is flush with the upper surface of the upper integrated board. This not only does not affect the thickness of the packaged product, but also allows heat to be transferred through the heat sink, thereby achieving the purpose of improving the heat dissipation performance.

[0024] The measured value of the thermal resistance of the high-bandwidth packaging structure with high heat dissipation in the present invention is 7.5W / k, and its heat dissipation performance is greatly improved, which effectively solves the problem of overheating of the high-bandwidth packaging structure during use, greatly improves the stability of the product, and does not affect the thickness of the packaged product, thereby improving the heat dissipation performance of the high-bandwidth packaging product without increasing the thickness of the packaged product. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Shown is a schematic diagram of a high-bandwidth packaging structure.

[0026] Figure 2 Shown is a flowchart of the manufacturing process of a high-bandwidth packaging structure with high heat dissipation in an embodiment of the present invention.

[0027] Figure 3 It is a schematic diagram showing a packaging substrate provided in an embodiment of the present invention and a chip soldered on the upper surface of the packaging substrate.

[0028] Figure 4 It is a schematic diagram showing an integrated board provided in an embodiment of the present invention, mounting the integrated board above a chip and opening a window directly above the chip at a position where there is no wiring on the integrated board.

[0029] Figure 5 It is a schematic diagram showing that a heat dissipation adhesive layer is formed on a side of the chip away from the package substrate and a heat sink is mounted on the upper surface of the heat dissipation adhesive layer in an embodiment of the present invention.

[0030] Figure 6 Shown is a schematic diagram of a high-bandwidth packaging structure with high heat dissipation in an embodiment of the present invention.

[0031] Figure 7 A schematic top view of a high-bandwidth packaging structure with high heat dissipation according to an embodiment of the present invention is shown.

[0032] Component number description

[0033] 1 Package substrate

[0034] 2 Chip

[0035] 3 Solder balls

[0036] 4 Filling layer

[0037] 5. Adhesive

[0038] 6 Integrated board

[0039] 601 Through Hole

[0040] 7 Window

[0041] 8 Heat dissipation adhesive layer

[0042] 9 Heat sink

[0043] 10 Heat dissipation resin

[0044] S1~Sn Steps DETAILED DESCRIPTION

[0045] The following embodiments of the present application are described in conjunction with the drawings in the embodiments of the present application. People familiar with this technology can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application. For example, when describing the embodiments of the present application in detail, for ease of explanation, the cross-sectional view representing the device structure will not be partially enlarged according to the general proportion, and the schematic diagram is only an example, which should not limit the scope of protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual production.

[0046] In the description of the embodiments of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium. Among them, "fixed connection" means that the two are connected to each other and the relative position relationship after the connection remains unchanged. It should be understood that when component A is fixedly connected to component C through component B, changes in the relative position relationship caused by the deformation of component A, component B and component C itself are allowed. "Rotational connection" means that they are connected to each other and can rotate relative to each other after the connection. "Sliding connection" means that they are connected to each other and can slide relative to each other after the connection. Among them, the two components are obtained by an integrated structure through an integrated molding process, which means that in the process of forming one of the two components, the component is connected to the other component, and there is no need to connect the two components together through reprocessing (such as bonding, welding, snap connection, screw connection).

[0047] The directional terms mentioned in the embodiments of the present application, such as "upper", "lower", "side", "top", "bottom", etc., are only references to the directions of the drawings. Therefore, the directional terms used are for better and clearer explanation and understanding of the embodiments of the present application, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0048] The term "plurality" means at least two. The term "above" includes the number itself. The term "and / or" is a description of an association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone. The terms "first", "second", etc. are used only for descriptive purposes and cannot be understood as suggesting or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" or "second" may explicitly or implicitly include one or more of the features.

[0049] The existing solutions to the heat dissipation problem of high-bandwidth packaging structures mainly include increasing the thickness of the chip 2, or filling the gap between the packaging substrate 1 and the integrated board 6 with a high heat dissipation resin 10, or using a heat sink or a heat dissipation ring. However, due to the lack of space for small-volume high-bandwidth packaging, these methods are limited by the height of the packaging product. Figure 1 This is a schematic diagram of a high-bandwidth packaging structure in the prior art. Only the heat dissipation resin 10 is filled between the packaging substrate 1 and the integrated board 6. After long-term use, the performance may become unstable due to overheating. Therefore, it is necessary to improve the heat dissipation performance of the high-bandwidth packaging without thickening the packaging product.

[0050] See also Figure 2 to Figure 7 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0051] Example 1

[0052] This embodiment provides a method for manufacturing a high-bandwidth packaging structure with high heat dissipation. Figure 2 , and its preparation method comprises the following steps:

[0053] S1, providing a packaging substrate 1, wherein the packaging substrate 1 comprises an upper surface and a lower surface arranged opposite to each other;

[0054] S2, providing a chip 2, and soldering the chip 2 to the upper surface of the packaging substrate 1;

[0055] S3, providing an integrated board 6, mounting the integrated board 6 on the top of the chip 2, and opening a plurality of through holes 601 and a window 7 located directly above the chip 2 at a position where there are no wiring on the integrated board 6;

[0056] S4. Provide a heat sink 9 and attach the heat sink 9 to the side of the chip 2 away from the packaging substrate 1 . The upper surface of the heat sink 9 passes through the window 7 , and the upper surface of the heat sink 9 is not higher than the upper surface of the integrated board 6 .

[0057] The following describes in detail the method for manufacturing the high-bandwidth packaging structure with high heat dissipation in this embodiment in conjunction with the specific drawings.

[0058] First, see Figure 3 , perform steps S1 and S2: provide a packaging substrate 1, the packaging substrate 1 includes an upper surface and a lower surface that are arranged opposite to each other; provide a chip 2, and solder the chip 2 to the upper surface of the packaging substrate 1.

[0059] As an example, before soldering the chip 2 to the upper surface of the packaging substrate 1, it also includes: forming a plurality of solder balls 3 on the upper surface of the packaging substrate 1, with the soldering surface of the chip 2 facing downward, and soldering the chip 2 to the upper surface of the packaging substrate 1 through the solder balls 3 to form a flip chip ball grid array structure (FCBGA).

[0060] As an example, after the chip 2 is soldered to the upper surface of the packaging substrate 1, the process also includes: forming a filling layer 4 between the chip 2 and the lower packaging substrate, wherein the filling layer 4 covers the solder balls 3 to improve the soldering reliability between the chip 2 and the packaging substrate 1.

[0061] Specifically, in this embodiment, the size of the packaging substrate 1 is 10mm×10mm, the material of the packaging substrate 1 is FR4 (glass fiber reinforced epoxy resin laminate material), and the thickness is 1.6mm; the size of the chip 2 is 5mm×5mm, and the distance between the chip 2 and the packaging substrate 1 is 0.1mm; in other examples, the size of the packaging substrate 1 and the size of the chip 2 are adjusted according to actual needs, and no excessive restrictions are made in this embodiment.

[0062] Next, see Figure 4 , execute step S3: provide an integrated board 6, mount the integrated board 6 on the top of the chip 2, and open a plurality of through holes 601 and a window 7 located directly above the chip 2 at a position where there is no wiring on the integrated board 6.

[0063] For details, see Figure 7 It is a top view schematic diagram of a high-bandwidth packaging structure with high heat dissipation. A plurality of through holes 601 are provided on the integrated board 6. In this embodiment, the aperture of the through hole 601 is 0.5 mm, and the spacing between two adjacent through holes 601 is 1 mm. A plurality of through holes 601 are provided to increase the heat dissipation area and improve the heat dissipation efficiency.

[0064] As an example, the integrated board 6 is mounted on the top of the chip 2 through a plurality of copper core balls 5 , and the interconnection between the integrated board 6 and the packaging substrate 1 is achieved through the copper core balls 5 .

[0065] Specifically, the connection between the integrated board 6 and the chip 2 is formed by welding and bonding the copper core ball 5. In the vertical direction, the spacing between the integrated board 6 and the chip 2 needs to be adjusted according to the total height requirement of the packaged product. If the spacing between the integrated board 6 and the chip 2 is too small, it will cause the copper core ball 5 to bridge. The specific value is not overly limited here.

[0066] As an example, a plurality of copper core balls 5 are arranged on both sides of the chip 2 , and the copper core balls 5 have the same structural size.

[0067] Next, see Figure 5 , execute step S4: provide a heat sink 9, and attach the heat sink 9 to the side of the chip 2 away from the packaging substrate 1, the upper surface of the heat sink 9 passes through the window 7, and the upper surface of the heat sink 9 is not higher than the upper surface of the integrated board 6.

[0068] Specifically, the upper surface of the heat sink 9 is not higher than the upper surface of the integrated board 6, so as to ensure that the thickness of the packaged product is not affected and to improve the heat dissipation performance of the high-bandwidth package without increasing the thickness. In this embodiment, the size of the window 7 is 7 mm×7 mm.

[0069] As an example, a heat dissipation adhesive layer 8 is formed between the heat sink 9 and the chip 2 . The heat dissipation adhesive layer 8 is formed on a side of the chip 2 away from the packaging substrate 1 , and the heat sink 9 is mounted on a side of the heat dissipation adhesive layer 8 away from the chip 2 .

[0070] As an example, the heat dissipation adhesive layer 8 formed includes a heat dissipation silver adhesive layer or a heat dissipation film.

[0071] Specifically, a heat dissipation silver adhesive layer is formed on the side of the chip 2 away from the package substrate 1 by a coating method; in this embodiment, the heat dissipation silver adhesive layer should meet the requirements of not generating holes and delamination problems when mounting a copper sheet or a silicon sheet, and the heat dissipation silver adhesive layer needs to be adjusted according to actual needs in the process of forming the heat dissipation silver adhesive layer to ensure its performance and reliability; of course, the higher the thermal conductivity of the heat dissipation silver adhesive layer, the better its heat dissipation effect, and no excessive restrictions are made here. A heat dissipation film is formed by an attachment method; in this embodiment, the heat dissipation film is a film composed of adhesive on both sides and a high heat dissipation film material in the middle, and the middle material includes graphene, graphene oxide, metal and metal oxide, etc.

[0072] Specifically, in this embodiment, a heat dissipation silver paste layer with a thickness of 0.05 mm is formed on a side of the chip 2 away from the packaging substrate 1 to enhance the heat dissipation capability of the chip 2 .

[0073] As an example, the upper surface of the heat sink 9 is flush with the upper surface of the integrated board 6 .

[0074] As an example, the heat sink 9 includes a silicon sheet or a copper sheet.

[0075] Specifically, the heat sink 9 is made of silicon or copper. The heat sink 9 used in this embodiment is a silicon wafer, whose heat dissipation coefficient is 5W / mK, and the size of the silicon wafer is 5mm×5mm. The upper surface of the silicon wafer is flush with the upper surface of the integrated board 6, which not only solves the problem of overheating of the high-bandwidth packaging structure during use and improves product stability, but also does not affect the thickness of the packaged product, thereby improving the heat dissipation performance of the high-bandwidth package without thickening the packaged product. Of course, in other examples, the size of the heat sink 9 can be adjusted according to actual conditions, and no excessive restrictions are made here.

[0076] See also Figure 6 Schematic diagram of a high-bandwidth packaging structure with high heat dissipation in this embodiment. As an example, the manufacturing method further includes: filling the heat dissipation resin 10 between the packaging substrate 1 and the integrated board 6 with glue.

[0077] Specifically, the gaps between the integrated board 6 and the chip 2 and the gaps between the integrated board 6 and the packaging substrate 1 are filled with heat dissipation resin 10 to ensure the stability of the packaging structure; other properties of the heat dissipation resin 10 are not restricted here as long as they can meet actual needs.

[0078] As an example, the manufacturing method further includes the steps of back-side ball implantation and substrate singulation. In this embodiment, the steps of back-side ball implantation and substrate singulation are not described in detail.

[0079] In the manufacturing method of the high-bandwidth packaging structure with high heat dissipation as described above, a through hole 601 is drilled at a non-wiring position of the integrated board 6 to increase the heat dissipation area and improve the heat dissipation efficiency; a heat dissipation silver glue layer or a heat dissipation film is drawn on the back of the chip 2 to increase the heat dissipation capacity of the chip 2; a silicon chip or a copper chip with a high heat dissipation coefficient is mounted flush with the upper surface of the integrated board 6 to further improve the heat dissipation efficiency; and then filled with heat dissipation resin 10 to ensure the stability of the packaging structure; and then heat is transferred through the silicon chip or copper chip on the back of the chip 2, thereby achieving the purpose of improving the heat dissipation performance.

[0080] Example 2

[0081] See also Figure 6 , Figure 7 This embodiment also provides a high-bandwidth packaging structure with high heat dissipation. The high-bandwidth packaging structure can be manufactured by the manufacturing method in Example 1, but is not limited to the manufacturing method described in Example 1.

[0082] The high-bandwidth packaging structure with high heat dissipation includes a packaging substrate 1, a chip 2, an integrated board 6 and a heat sink 9, wherein the packaging substrate 1 includes an upper surface and a lower surface arranged opposite to each other; the chip 2 is located at a preset position on the upper surface of the packaging substrate 1; the integrated board 6 is located on the side of the chip 2 away from the packaging substrate 1, and a plurality of through holes 601 and a window 7 directly above the chip 2 are provided on the integrated board 6; the heat sink 9 is located on the side of the chip 2 away from the packaging substrate 1, the upper surface of the heat sink 9 passes through the window 7, and the upper surface of the heat sink 9 is not higher than the upper surface of the integrated board 6.

[0083] Specifically, in this embodiment, the size of the packaging substrate 1 is 10mm×10mm, the material of the packaging substrate 1 is FR4 (glass fiber reinforced epoxy resin laminate material), and the thickness is 1.6mm; the size of the window 7 is 7mm×7mm, the size of the chip 2 is 5mm×5mm, and the spacing between the chip 2 and the packaging substrate 1 is 0.1mm; the aperture of the through hole 601 is 0.5mm, and the spacing between two adjacent through holes 601 is 1mm; the silicon wafer with a heat dissipation coefficient of 5W / mK is mounted, the size of the silicon wafer is 5mm*5mm, and the upper surface of the silicon wafer is flush with the upper surface of the integrated board 6.

[0084] As an example, before soldering the chip 2 to the upper surface of the packaging substrate 1, it also includes: forming a plurality of solder balls 3 on the upper surface of the packaging substrate 1, with the soldering surface of the chip 2 facing downward, and soldering the chip 2 to the upper surface of the packaging substrate 1 through the solder balls 3 to form a flip chip 2 ball grid array structure (FCBGA).

[0085] As an example, a heat dissipation adhesive layer 8 is also included, and the heat dissipation adhesive layer 8 is located between the chip 2 and the heat sink 9 .

[0086] As an example, the heat dissipation adhesive layer 8 is formed on a side of the chip 2 away from the packaging substrate 1 , and the heat sink 9 is mounted on a side of the heat dissipation adhesive layer 8 away from the chip 2 .

[0087] As an example, the heat dissipation adhesive layer 8 formed includes a heat dissipation silver adhesive layer or a heat dissipation film.

[0088] In this embodiment, the thickness of the heat dissipation silver paste layer is 0.05 mm.

[0089] As an example, the heat dissipation resin 10 is filled between the package substrate 1 and the integrated board 6 by glue potting.

[0090] As an example, the upper surface of the heat sink 9 is flush with the upper surface of the integrated board 6 .

[0091] After testing the packaging structure in this embodiment, the actual measured value of the thermal resistance is 7.5 W / K, which significantly improves the heat dissipation of the high-bandwidth packaging structure.

[0092] In summary, the present invention provides a plurality of through holes and windows at the non-routing position of the integrated board, sets a heat dissipation adhesive layer on the side of the chip away from the packaging substrate, and mounts a silicon chip or copper sheet with a high heat dissipation coefficient on the heat dissipation adhesive layer, and the upper surface of the heat sink passes through the window and is flush with the upper surface of the upper integrated board. This will not only not affect the thickness of the packaged product, but also transfer heat through the heat sink, thereby achieving the purpose of improving the heat dissipation performance. The actual measured value of the thermal resistance of the high-bandwidth packaging structure with high heat dissipation in the present invention is 7.5W / k, and its heat dissipation performance is greatly improved, which effectively solves the problem of overheating of the high-bandwidth packaging structure during use, greatly improves the stability of the product, and does not affect the thickness of the packaged product, thereby improving the heat dissipation performance of the high-bandwidth packaging product without thickening the packaged product. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has a high industrial utilization value.

[0093] The above description is only a specific implementation method of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present application, which should be included in the protection scope of the present application; in the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other. The structural member materials, sizes, shapes, etc. mentioned in the embodiments of the present application are all schematic descriptions and do not constitute strict or absolute limitations. Therefore, the protection scope of the present application shall be based on the protection scope of the claims.

Claims

1. A method for manufacturing a high-bandwidth packaging structure with high heat dissipation, characterized in that: The production method comprises the following steps: Providing a packaging substrate, the packaging substrate comprising an upper surface and a lower surface arranged opposite to each other; Providing a chip, and soldering the chip to the upper surface of the packaging substrate; Providing an integrated board, mounting the integrated board on top of the chip, and opening a plurality of through holes and a window located directly above the chip at a position where there are no wiring on the integrated board; A heat sink is provided and mounted on a side of the chip away from the packaging substrate. The upper surface of the heat sink passes through the window and is not higher than the upper surface of the integrated board.

2. The method for manufacturing a high bandwidth packaging structure with high heat dissipation according to claim 1, characterized in that: The integrated board is mounted on the chip through a plurality of copper core balls, and the interconnection between the integrated board and the packaging substrate is achieved through the copper core balls.

3. The method for manufacturing a high bandwidth packaging structure with high heat dissipation according to claim 1, characterized in that: A heat dissipation adhesive layer is formed between the heat sink and the chip. The heat dissipation adhesive layer is formed on a side of the chip away from the packaging substrate. The heat sink is mounted on a side of the heat dissipation adhesive layer away from the chip.

4. The method for manufacturing a high bandwidth packaging structure with high heat dissipation according to claim 3, characterized in that: The heat dissipation adhesive layer formed includes a heat dissipation silver adhesive layer or a heat dissipation film.

5. The method for manufacturing a high bandwidth packaging structure with high heat dissipation according to claim 1, characterized in that: The upper surface of the heat sink is flush with the upper surface of the integrated board.

6. The method for manufacturing a high bandwidth packaging structure with high heat dissipation according to claim 1, characterized in that: The heat sink includes a silicon sheet or a copper sheet.

7. The method for manufacturing a high bandwidth packaging structure with high heat dissipation according to claim 1, characterized in that: The manufacturing method further comprises: performing glue filling with heat dissipation resin between the packaging substrate and the integrated board.

8. A high bandwidth packaging structure with high heat dissipation, characterized in that: include: A packaging substrate, the packaging substrate comprising an upper surface and a lower surface arranged opposite to each other; A chip, wherein the chip is located at a preset position on the upper surface of the packaging substrate; An integrated board, the integrated board is located on a side of the chip away from the packaging substrate, and the integrated board is provided with a plurality of through holes and a window located directly above the chip; A heat sink is located on a side of the chip away from the packaging substrate, an upper surface of the heat sink passes through the window, and the upper surface of the heat sink is not higher than an upper surface of the integrated board.

9. The high bandwidth packaging structure with high heat dissipation according to claim 8, characterized in that: It also includes a heat dissipation adhesive layer, which is located between the chip and the heat sink.

10. The high bandwidth packaging structure with high heat dissipation according to claim 8, characterized in that: The upper surface of the heat sink is flush with the upper surface of the integrated board.

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