Preparation process of high-transmittance ITO (Indium Tin Oxide) conductive glass

Abstract

The invention provides a high-transmittance ITO conductive glass preparation process, and belongs to the technical field of conductive glass preparation, and the high-transmittance ITO conductive glass preparation process comprises the following steps: S1, cleaning a substrate: carrying out ultra-clean cleaning on a glass substrate to remove oil stains and impurities on the surface, and blow-drying by adopting a high-pressure air knife; s2, coating pretreatment: feeding the cleaned glass substrate into a coating chamber, and carrying out pretreatment before coating; s3, forming a SiO2 film: adopting a medium-frequency coating process, obtaining the SiO2 film through medium-frequency reactive sputtering of a Si target, reducing the quantity of electric charges accumulated on the surface of the SiO2 film, and reducing the probability of abnormal discharge; s4, forming an ITO film: continuously coating the SiO2 film to form an ITO conductive film; and S5, post-treatment: carrying out annealing and cleaning post-treatment on the coated glass so as to improve the stability and adhesive force of the film layer. According to the invention, a traditional radio frequency sputtering SiO2 film forming process is replaced by an intermediate frequency coating process, so that the quantity of electric charges accumulated on the surface of the SiO2 film is reduced, the probability of abnormal discharge is reduced, and the product quality is effectively ensured.

Description

Technical Field

[0001] The invention relates to the technical field of conductive glass preparation, and in particular to a process for preparing high-transmittance ITO conductive glass. Background Art

[0002] Conventional ordinary glass is an insulating material, but by coating a conductive film (ITO film) on its surface, it can be made conductive. Conductive glass is a glass with low resistance and the ability to conduct electricity. Conductive glass is divided into two types: volume conductive glass and surface conductive layer glass. The composition of volume conductive glass contains alkaline oxides, silicon oxide, and titanium oxide. Surface conductive layer glass is made by evaporating a metal film (such as gold, platinum, etc., with a thickness of less than 10 nanometers) on the surface of transparent glass, or spraying a metal oxide conductive film (such as tin, indium, etc.) on the heated glass surface.

[0003] Conductive glass has high mechanical strength and corrosion resistance. It can be used as windshield glass for aircraft, as glass electrode in plasma display, silicon solar cell, tuning indicator tube and other devices, and has a wide range of uses in metal electrolytic cells, electric heating equipment, etc.

[0004] Conductive glass is widely used in liquid crystal displays (LCD), solar cells, microelectronic ITO conductive film glass, optoelectronics and various optical fields. With the development of science and technology, the requirements for the transmittance, color uniformity, film quality and other properties of conductive glass are getting higher and higher. The traditional conductive glass preparation process has problems such as low transmittance and unstable film quality, which makes it difficult to meet the market demand for high-quality conductive glass.

[0005] Therefore, a high-transmittance ITO conductive glass preparation process is proposed. Summary of the invention

[0006] The present invention aims to solve the problems raised in the background technology and provides a process for preparing ITO conductive glass with high transmittance. By optimizing the SiO2 film forming process, sputtering power curve, impurity removal process and the design of loading fixtures, ITO conductive glass with high transmittance, uniform color and stable film quality is prepared.

[0007] The specific technical solutions are as follows:

[0008] A high-transmittance ITO conductive glass preparation process comprises the following steps:

[0009] S1. Cleaning the substrate: Clean the glass substrate to remove oil and impurities on the surface, and dry it with a high-pressure air knife;

[0010] S2, pre-coating treatment: sending the cleaned glass substrate into the coating room for pre-coating treatment;

[0011] S3, SiO2 film formation: using medium frequency coating process, SiO2 film is obtained by medium frequency reactive sputtering of Si target, which reduces the amount of charge accumulated on the surface of SiO2 film and reduces the probability of abnormal discharge;

[0012] S4, ITO film formation: continue to coat the SiO2 film to form an ITO conductive film;

[0013] S5, post-processing: annealing and cleaning the coated glass to improve the stability and adhesion of the film layer.

[0014] As a preferred solution of the present invention, the thickness of the SiO2 film in step S3 is 20-30 nm, and the uniformity and transmittance of the SiO2 film layer are ensured by adjusting the Si target sputtering working point and the process gas ratio.

[0015] As a preferred solution of the present invention, in step S3, the Si target sputtering working point is stable, and multi-stage process gas distribution and multi-stage target cover uniformity baffle are used to ensure the thickness of the SiO2 film and the uniformity of the film thickness.

[0016] As a preferred embodiment of the present invention, step S4 involves the preparation process of the ITO film, and its color is presented as a uniform change from purple-red (lower limit of the color range) to blue-purple (middle limit of the color range) to light blue (upper limit of the color range). In this step, color differences between batches and color differences within a single piece or between different pieces in the same batch are allowed. These color differences can be achieved by adjusting the following parameters: resistance uniformity of the ITO film, coating speed, coating power, and the ratio of process gases, specifically including the ratio of argon (Ar), oxygen (O2), and nitrogen (N2).

[0017] As a preferred solution of the present invention, it also includes a SiO2 impurity removal process, which involves ultra-clean cleaning of the glass substrate, combined with ultra-high vacuum dust removal technology, and target surface cleanliness control to ensure that the SiO2 film layer is almost free of impurities and has a dense and high purity.

[0018] As a preferred solution of the present invention, the annealing temperature in step S5 is controlled at 300-400°C, the annealing time is not less than 2 hours, and the edge trimming ensures that there is no edge collapse and scratches to improve the stability and adhesion of the film layer. At the same time, the prepared high-transmittance ITO conductive glass is subjected to comprehensive quality inspection, including key indicators such as resistance, transmittance, and film thickness, to ensure that the product meets the design requirements and technical standards.

[0019] As a preferred solution of the present invention, it also includes a customized loading fixture, which is fixedly mounted on the substrate rack in the coating chamber, and the loading fixture includes a base plate, a fixed clamp, a fixed seat, a guide rod, a handle and a movable clamp. The base plate is fixedly mounted on the substrate rack in the coating chamber and is used to clamp the glass substrate to be coated. The fixed clamp and the fixed seat are respectively fixedly mounted at both ends of the base plate. Two guide rods are provided, and both guide rods are slidably inserted on the fixed seat. Each guide rod is provided with a spring 1 and a spring 2. The handle is fixedly mounted on one end of the guide rod away from the fixed clamp, and the movable clamp is fixedly mounted on one end of the guide rod away from the handle, and the movable clamp is located between the fixed clamp and the fixed seat, wherein:

[0020] The first spring is located between the movable clamp and the fixed seat and is in a compressed state. The second spring is located between the fixed seat and the handle and is in a compressed state. With the cooperation of the first spring and the second spring, the movable clamp and the fixed clamp can clamp the glass substrate to be coated. After clamping the glass substrate to be coated, the movable clamp and the fixed clamp are ≤2.5mm away from the edge of the glass substrate to solve the problem of glass falling off and edge collapse during the production process, thereby ensuring product quality. The loading fixture is made of a special fixture frame, which is convenient and reliable to fit, ensuring the quality and yield of the product during the production process.

[0021] As a preferred solution of the present invention, during the entire coating process, an automated control system is used to monitor and adjust the coating parameters in real time to ensure the stability and consistency of the coating quality.

[0022] As a preferred solution of the present invention, the prepared high-transmittance ITO conductive glass has a transmittance of ≥85% when the light wavelength is 550nm, and the transmittance of a single-layer SiO2 film is as high as over 91.3%.

[0023] As a preferred embodiment of the present invention, the cleaning temperature in step S1 is controlled at 50-60°C, and the cleaning time is not less than 30 minutes; the vacuum degree of ultra-high vacuum dust removal reaches below 1×10^-6Pa, and the dust removal time is not less than 15 minutes;

[0024] In step S3, the medium frequency power is set to 100-150 kW, the working voltage is 130 V, the working point is set to 44.0%-545.0%, and the coating time is determined according to the required film thickness, which is between 60 and 90 minutes;

[0025] Ar, O 2 、N 2 The process gas ratio is 3:1:1 (or fine-tuned according to actual needs) to ensure the quality and performance of the SiO2 film;

[0026] In step S4, the ITO sputtering power is set to 80-120 kW, and the sputtering time is determined according to the required film thickness and resistance value;

[0027] During the sputtering process, the uniformity and performance of the ITO film layer are ensured by adjusting the ratio of process gases and the uniformity baffle.

[0028] The high-transmittance ITO conductive glass preparation process provided by the present invention has the following beneficial effects:

[0029] (1) The medium frequency coating process replaces the traditional RF sputtering SiO2 film forming process, which reduces the amount of charge accumulated on the surface of the SiO2 film, reduces the probability of abnormal discharge, and effectively ensures product quality;

[0030] (2) The thickness and uniformity of the SiO2 film layer are ensured by designing the sputtering power curve and the reasonable Si target sputtering working point, and coordinating the multi-stage process gas distribution and the multi-stage target cover uniformity baffle application;

[0031] (3) The purity of the film layer and the quality of the product are improved through the SiO2 impurity removal process and the design of customized loading fixtures;

[0032] (4) The entire coating process uses an automated control system for real-time monitoring and adjustment, ensuring the stability and consistency of coating quality;

[0033] (5) The prepared high-transmittance ITO conductive glass has excellent transmittance, color uniformity and film quality, and has broad market application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A flow chart of a process for preparing high-transmittance ITO conductive glass provided by an embodiment of the present invention;

[0035] Figure 2 A schematic diagram of the structure of a loading fixture in a process for preparing high-transmittance ITO conductive glass provided by an embodiment of the present invention;

[0036] Figure 3 A schematic structural diagram from another perspective of a loading fixture in a process for preparing high-transmittance ITO conductive glass provided in an embodiment of the present invention.

[0037] In the attached figure:

[0038] 1. Loading fixture; 101. Base plate; 102. Fixed clamp; 103. Fixed seat; 104. Guide rod; 105. Spring 1; 106. Spring 2; 107. Handle; 108. Movable clamp. DETAILED DESCRIPTION

[0039] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0040] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on this patent; in order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0041] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0042] In the description of the present invention, unless otherwise clearly specified and limited, if the term "connection" or the like appears to indicate the connection relationship between components, the term should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two components or the interaction relationship between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0043] Example

[0044] The high-transmittance ITO conductive glass preparation process provided in this embodiment is as follows: Figure 1-Figure 3 As shown, including:

[0045] S1. Cleaning the substrate: Clean the glass substrate to remove oil and impurities on the surface. The specific plan is as follows:

[0046] S11. Selection of cleaning solution: Use a mixture of deionized water and a specific cleaning agent. The cleaning agent must be able to efficiently remove oil and impurities without damaging the glass surface.

[0047] S12. Cleaning temperature and time: Heat the cleaning solution to 50-60°C to ensure that oil and impurities can be dissolved and removed more effectively. The cleaning time should be no less than 30 minutes to ensure that surface pollutants are fully removed.

[0048] S13. Cleaning method: Use a combination of ultrasonic cleaning and spray cleaning, using the cavitation effect of ultrasound and the flushing force of the spray to improve the cleaning effect.

[0049] S14. Drying with high-pressure air knife: Use high-pressure air knife to quickly dry the cleaned glass substrate to ensure that there is no residual moisture on the surface.

[0050] Among them, the vacuum degree of ultra-high vacuum dust removal in the cleaning room reaches below 1×10^-6Pa, and the dust removal time is not less than 15 minutes.

[0051] S2, pre-coating treatment: sending the cleaned glass substrate into the coating room for pre-coating treatment;

[0052] The specific plan is as follows:

[0053] S21. Pretreatment environment: Before sending the cleaned glass substrate into the coating room, it is necessary to ensure that the indoor environment of the coating room meets the cleanliness standards and is free of dust and impurities.

[0054] S22, pretreatment step: preheating the glass substrate to remove residual moisture and stress on the surface, and the preheating temperature is controlled between 100 and 150°C.

[0055] S23, surface activation: Use ion beam or plasma to activate the surface of the glass substrate to increase the surface energy, which is beneficial to the adhesion of subsequent coating layers.

[0056] S3, SiO2 film formation: using medium frequency coating process, SiO2 film is obtained by medium frequency reactive sputtering of Si target, which reduces the amount of charge accumulated on the surface of SiO2 film and reduces the probability of abnormal discharge;

[0057] The specific plan is as follows:

[0058] Medium frequency coating process: The medium frequency coating process is adopted to obtain SiO2 film by medium frequency reactive sputtering of Si target. The medium frequency power is set to 100-150kW, the working voltage is 130V, and the working point is set to 44.0%~545.0%.

[0059] Process gas ratio: The process gas ratio of Ar, O2, and N2 is 3:1:1 (or fine-tuned according to actual needs) to ensure the quality and performance of the SiO2 film.

[0060] Film thickness control: By adjusting the Si target sputtering working point and process gas ratio, as well as the coating time (60 to 90 minutes), ensure that the thickness of the SiO2 film is 2030nm and the film layer is uniform.

[0061] Uniformity baffle: Use a multi-stage uniformity baffle to further improve the uniformity of the SiO2 film layer.

[0062] S4, ITO film formation: continue to coat the SiO2 film to form an ITO conductive film;

[0063] The specific plan is as follows:

[0064] Sputtering process: Continue to coat the SiO2 film to form an ITO conductive film. The ITO sputtering power is set to 80-120kW, and the sputtering time is determined according to the required film thickness and resistance value.

[0065] Resistance uniformity adjustment: By adjusting the resistance uniformity during the sputtering process, the resistance value of the ITO film layer is ensured to be uniform.

[0066] Process gas ratio: Continue to adjust the process gas ratio of Ar, O2, and N2 to ensure the performance of the ITO film layer.

[0067] Uniformity control: Use uniformity baffles to ensure the uniformity of the ITO film layer on the glass substrate.

[0068] S5, post-processing: annealing and cleaning the coated glass to improve the stability and adhesion of the film layer;

[0069] The specific plan is as follows:

[0070] Annealing treatment: Anneal the coated glass at a temperature of 300-400°C for no less than 2 hours. During the annealing process, the temperature must be kept uniform to avoid stress in the film layer.

[0071] Post-cleaning treatment: After annealing, clean the glass to remove surface residues. After cleaning, ensure that there are no stains or scratches on the surface.

[0072] Edge trimming: Trim the glass edges to ensure there are no chipping or scratches to improve the stability and adhesion of the film.

[0073] Quality inspection: Conduct comprehensive quality inspection on the prepared high-transmittance ITO conductive glass, including key indicators such as resistance, transmittance, and film thickness, to ensure that the product meets the design requirements and technical standards.

[0074] Specifically, in this embodiment, the thickness of the SiO2 film in step S3 is 20-30 nm, and the uniformity and transmittance of the SiO2 film layer are ensured by adjusting the Si target sputtering working point and the process gas ratio.

[0075] Specifically, in this embodiment, the Si target sputtering working point is stable in step S3, and multi-stage process gas distribution and multi-stage target cover uniformity baffle are used to ensure the thickness of the SiO2 film layer and the uniformity of the film thickness.

[0076] Specifically, in this embodiment, the color of the ITO film in step S4 is uniform, purple-red (lower limit)-blue-purple (middle limit)-light blue (upper limit), batch differences and single-piece or batch differences are allowed, and the resistance uniformity, speed, power and process gases Ar, O 2 、N 2 Ratio realization.

[0077] Specifically, in this embodiment, a SiO2 impurity removal process is also included, in which the glass substrate is ultra-cleaned and ultra-high vacuum dust removal technology is used to control the cleanliness of the target surface to ensure that the SiO2 film layer has almost no impurities and the film layer is dense and highly pure.

[0078] Specifically, in the present embodiment, a customized loading fixture 1 is also included, which is fixedly mounted on the substrate rack in the coating chamber. The loading fixture 1 includes a substrate 101, a fixed clamping plate 102, a fixed seat 103, a guide rod 104, a handle 107 and a movable clamping plate 108. The substrate 101 is fixedly mounted on the substrate rack in the coating chamber and is used to clamp the glass substrate to be coated. The fixed clamping plate 102 and the fixed seat 103 are respectively fixedly mounted at both ends of the substrate 101. Two guide rods 104 are provided, and the two guide rods 104 are slidably inserted on the fixed seat 103. Each guide rod 104 is provided with a spring 105 and a spring 2 106. The handle 107 is fixedly mounted on one end of the guide rod 104 away from the fixed clamping plate 102. The movable clamping plate 108 is fixedly mounted on one end of the guide rod 104 away from the handle 107, and the movable clamping plate 108 is located between the fixed clamping plate 102 and the fixed seat 103, wherein:

[0079] Spring 105 is located between the movable clamp 108 and the fixed seat 103 and is in a compressed state. Spring 2 106 is located between the fixed seat 103 and the handle 107 and is in a compressed state. With the coordinated cooperation of spring 105 and spring 2 106, the movable clamp 108 and the fixed clamp 102 can clamp the glass substrate to be coated. After clamping the glass substrate to be coated, the movable clamp 108 and the fixed clamp 102 are ≤2.5mm away from the edge of the glass substrate.

[0080] When in use, at least four groups of symmetrically arranged loading fixtures 1 are used, and the handle 107 is pulled outward by hand to make the movable clamp 108 leave the fixed clamp 102, and then the edge of the glass substrate to be coated is inserted between the movable clamp 108 and the fixed clamp 102, and the handle 107 is slowly released, and the spring 105 and the spring 2 106 are used to cooperatively drive the movable clamp 108 to move toward the fixed clamp 102 to clamp the edge of the glass substrate to be coated. Since the movable clamp 108 and the fixed clamp 102 are ≤2.5mm away from the edge of the glass substrate after clamping the glass substrate to be coated, the glass substrate to be coated is less blocked, which can ensure that the surface of the glass substrate can be almost completely covered with the ITO film layer, thereby improving the utilization rate of the glass substrate, while improving the purity of the film layer and the quality of the product.

[0081] Specifically, in this embodiment, during the entire coating process, an automated control system is used to monitor and adjust the coating parameters in real time to ensure the stability and consistency of the coating quality.

[0082] Specifically, in this embodiment, the prepared high-transmittance ITO conductive glass has a transmittance of ≥85% when the light wavelength is 550nm, and the transmittance of a single-layer SiO2 film is as high as 91.3% or more.

[0083] Specifically, in this embodiment, by designing the sputtering power curve, the SiO2 film forming process is precisely controlled, thereby optimizing the structure and performance of the film layer;

[0084] The specific plan is as follows:

[0085] Sputtering power is set in a curve:

[0086] Initial stage: At the beginning of sputtering, a lower sputtering power (such as 80-90kW) is used to slowly increase the thickness of the film layer while avoiding film defects caused by excessive power.

[0087] Stabilization stage: When the film layer reaches a certain thickness, gradually increase the sputtering power to the set value (such as 100-150kW) and keep the power stable to ensure the uniformity and density of the film layer.

[0088] Ending stage: When sputtering is nearing the end, the sputtering power is gradually reduced to slow down the growth rate of the film layer and avoid the film layer being too thick or cracking.

[0089] Power curve adjustment:

[0090] Based on experimental data and film performance test results, the sputtering power curve is fine-tuned to achieve the best film quality and performance.

[0091] Pay special attention to power fluctuations that may occur during the sputtering process and make timely adjustments to keep the power stable.

[0092] By selecting the appropriate Si target sputtering working point, the quality and performance of the SiO2 film layer can be ensured to be optimal.

[0093] The specific plan is as follows:

[0094] Working point selection:

[0095] According to the material properties of the Si target and the technical parameters of the coating equipment, an appropriate working point range (such as 44.0% to 545.0%) is selected.

[0096] Multiple experiments are carried out within this range to observe performance indicators such as film thickness, uniformity, and density to determine the optimal working point.

[0097] Working point adjustment:

[0098] During the coating process, the working point is fine-tuned according to the film quality test results and experimental data.

[0099] Pay special attention to the initial and final stages of coating, as the working point may need to be adjusted appropriately to maintain the uniformity and stability of the film.

[0100] Process parameter matching:

[0101] While determining the optimal working point, it is also necessary to consider the matching of other process parameters, such as process gas ratio, coating time, etc.

[0102] By optimizing the combination of these parameters, the quality and performance of the SiO2 film can be further improved.

[0103] Precautions

[0104] When adjusting the sputtering power curve and working point, it is necessary to pay close attention to the operating status of the coating equipment and the film quality test results.

[0105] Detailed experimental data and film performance test results should be recorded during the experiment to facilitate subsequent analysis and optimization.

[0106] Designing the sputtering power curve and selecting a reasonable Si target sputtering working point is a process of continuous iteration and optimization, which requires continuous experiments and adjustments to achieve the best results.

[0107] Through the implementation of the above scheme, the SiO2 film forming process can be further optimized, and the quality and performance of the film layer can be improved, thereby ensuring that the preparation process of high-transmittance ITO conductive glass is stable and reliable.

[0108] In summary, the high-transmittance ITO conductive glass preparation process provided in this embodiment has the following advantages:

[0109] (1) The medium frequency coating process replaces the traditional RF sputtering SiO2 film forming process, which reduces the amount of charge accumulated on the surface of the SiO2 film, reduces the probability of abnormal discharge, and effectively ensures product quality;

[0110] (2) The thickness and uniformity of the SiO2 film layer are ensured by designing the sputtering power curve and the reasonable Si target sputtering working point, and coordinating the multi-stage process gas distribution and the multi-stage target cover uniformity baffle application;

[0111] (3) The purity of the film layer and the quality of the product are improved through the SiO2 impurity removal process and the design of customized loading fixtures;

[0112] (4) The entire coating process uses an automated control system for real-time monitoring and adjustment, ensuring the stability and consistency of coating quality;

[0113] (5) The prepared high-transmittance ITO conductive glass has excellent transmittance, color uniformity and film quality, and has broad market application prospects.

[0114] The above are only preferred embodiments of the present invention, and are not intended to limit the implementation methods and protection scope of the present invention. Those skilled in the art should be aware that all solutions obtained by equivalent substitutions and obvious changes made using the description and illustrations of the present invention should be included in the protection scope of the present invention.

Claims

1. A process for preparing high-transmittance ITO conductive glass, characterized in that: The following steps are involved: S1. Cleaning the substrate: Clean the glass substrate to remove oil and impurities on the surface, and dry it with a high-pressure air knife; S2, pre-coating treatment: sending the cleaned glass substrate into the coating room for pre-coating treatment; S3, SiO2 film formation: adopt medium frequency coating process, and obtain SiO2 film by medium frequency reactive sputtering of Si target to reduce the amount of charge accumulated on the surface of SiO2 film and reduce the probability of abnormal discharge; S4, ITO film formation: continue to plate on the SiO2 film to form an ITO conductive film; S5, post-processing: annealing and cleaning the coated glass to improve the stability and adhesion of the film layer.

2. The high-transmittance ITO conductive glass preparation process according to claim 1, characterized in that: In step S3, the thickness of the SiO2 film is 20-30 nm, and the uniformity and transmittance of the SiO2 film layer are ensured by adjusting the Si target sputtering working point and the process gas ratio.

3. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: In step S3, the Si target sputtering working point is stable, and multi-stage process gas distribution and multi-stage target cover uniformity baffle are used to ensure the thickness of the SiO2 film layer and the uniformity of the film thickness.

4. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: Step S4 involves the preparation process of the ITO film, whose color changes evenly from purple-red to blue-purple to light blue. In this step, color differences between batches and color differences within a single wafer or between different wafers in the same batch are allowed. These color differences are achieved by adjusting the following parameters: resistance uniformity of the ITO film, coating speed, coating power, and the ratio of process gases, specifically including the ratio of argon, oxygen, and nitrogen.

5. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: It also includes a SiO2 impurity removal process, which involves ultra-clean cleaning of the glass substrate, combined with ultra-high vacuum dust removal technology, and target surface cleanliness control to ensure that the SiO2 film has almost no impurities and is dense and highly pure.

6. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: In step S5, the annealing temperature is controlled at 300-400°C, the annealing time is not less than 2 hours, and the edge is trimmed to ensure that there is no edge collapse and scratches to improve the stability and adhesion of the film layer. At the same time, the prepared high-transmittance ITO conductive glass is subjected to comprehensive quality inspection, including key indicators such as resistance, transmittance, and film thickness, to ensure that the product meets the design requirements and technical standards.

7. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: The invention also comprises a customized loading fixture (1), wherein the loading fixture (1) is fixedly mounted on a substrate rack in a coating chamber, and the loading fixture (1) comprises a base plate (101), a fixed clamping plate (102), a fixed seat (103), a guide rod (104), a handle (107) and a movable clamping plate (108). The base plate (101) is fixedly mounted on the substrate rack in the coating chamber and is used to clamp a glass substrate to be coated. The fixed clamping plate (102) and the fixed seat (103) are respectively fixedly mounted on two ends of the base plate (101). The guide rod (104) is provided with a handle (107) and a movable clamping plate (108). There are two guide rods (104), and both guide rods (104) are slidably inserted on the fixed seat (103), and each guide rod (104) is provided with a spring 1 (105) and a spring 2 (106), and the handle (107) is fixedly mounted on one end of the guide rod (104) away from the fixed clamping plate (102), and the movable clamping plate (108) is fixedly mounted on one end of the guide rod (104) away from the handle (107), and the movable clamping plate (108) is located between the fixed clamping plate (102) and the fixed seat (103), wherein: The spring 1 (105) is located between the movable clamping plate (108) and the fixed seat (103) and is in a compressed state. The spring 2 (106) is located between the fixed seat (103) and the handle (107) and is in a compressed state. With the coordinated cooperation of the spring 1 (105) and the spring 2 (106), the glass substrate to be coated can be clamped between the movable clamping plate (108) and the fixed clamping plate (102). After clamping the glass substrate to be coated, the movable clamping plate (108) and the fixed clamping plate (102) are ≤2.5mm away from the edge of the glass substrate.

8. The process for preparing high-transmittance ITO conductive glass according to claim 7, characterized in that: During the entire coating process, an automated control system is used to monitor and adjust the coating parameters in real time to ensure the stability and consistency of the coating quality.

9. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: The prepared high-transmittance ITO conductive glass has a transmittance of ≥85% when the light wavelength is 550nm, and the transmittance of a single-layer SiO2 film is as high as over 91.3%.

10. The process for preparing high-transmittance ITO conductive glass according to claim 1, characterized in that: In step S1, the cleaning temperature is controlled at 50-60°C, and the cleaning time is not less than 30 minutes; the vacuum degree of ultra-high vacuum dust removal reaches below 1×10^-6Pa, and the dust removal time is not less than 15 minutes; In step S3, the medium frequency power is set to 100-150 kW, the working voltage is 130 V, the working point is set to 44.0%-545.0%, and the coating time is determined according to the required film thickness, which is between 60 and 90 minutes; Ar, O 2 、N 2 The process gas ratio is 3:1:1 to ensure the quality and performance of the SiO2 film; In step S4, the ITO sputtering power is set to 80-120 kW, and the sputtering time is determined according to the required film thickness and resistance value; During the sputtering process, the uniformity and performance of the ITO film layer are ensured by adjusting the ratio of process gases and the uniformity baffle.

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