Workpiece processing device

Abstract

The present application provides a workpiece processing apparatus capable of adjusting a thickness of a workpiece in consideration of a thickness deviation of a support member and a thermal effect on the workpiece, thereby improving productivity. The workpiece processing device (1) comprises a first measuring mechanism (31) and a second measuring mechanism (32) as measuring mechanisms (4), the first measuring mechanism (31) is used for measuring the thickness while conveying a wafer (W) after processing on an intermediate grinding table (ST3) is finished, and the second measuring mechanism (32) is used for measuring the thickness while conveying the wafer (W) after processing on a fine grinding table (ST4) is finished. The inclination angle (theta) of the chuck table (12) on the fine grinding table (ST4) is adjusted on the basis of the measured value of the first measuring mechanism (31). The measurement value of the second measurement mechanism (32) is added to the adjustment of the inclination angle (theta) of the chuck table (12) on the fine grinding table (ST4).

Description

Technical Field

[0001] The invention relates to a workpiece processing device. Background Art

[0002] In the field of semiconductor manufacturing, in order to form a semiconductor wafer such as a silicon wafer (hereinafter sometimes referred to as a "workpiece") into a thin film, the workpiece is ground. As a workpiece processing device for performing such grinding, there is known a workpiece processing device that, after roughly grinding the workpiece to be thicker than a target shape (target thickness), finely grinds the roughly ground workpiece to a target shape.

[0003] For example, as a workpiece processing device, there is known a workpiece processing device that measures the thickness of the workpiece at each grinding position after rough grinding and further fine grinding of the workpiece. According to this workpiece processing device, the shape of the workpiece after rough grinding can be reflected in the tilt adjustment during fine grinding, and the shape of the workpiece after fine grinding can be reflected in the grinding of the next workpiece (for example, refer to Patent Document 1).

[0004] In addition, as a workpiece processing device, there is known a workpiece processing device that includes a rough grinding table for rough grinding a workpiece and a fine grinding table for fine grinding a workpiece, and is provided with a thickness measuring unit for measuring the thickness of the workpiece during the conveyance of the workpiece. According to this workpiece processing device, based on the average thickness of the entire surface of the workpiece before fine grinding obtained from the measurement value of the thickness measuring unit, the target shape after fine grinding can be corrected, thereby calculating the corrected target shape (for example, refer to Patent Document 2).

[0005] Furthermore, as a workpiece processing device, there is known a workpiece processing device that temporarily stops grinding during fine grinding (finishing) of a workpiece and optically measures the thickness of the workpiece at three radial positions at the grinding position. According to this workpiece processing device, the workpiece can be tilted based on the thickness of the workpiece measured when the grinding is temporarily stopped, and the fine grinding of the workpiece can be restarted after the tilt adjustment (for example, refer to Patent Document 3).

[0006] Patent Document 1: Japanese Patent Application Publication No. 2016-201422

[0007] Patent Document 2: Japanese Patent Application Publication No. 2018-122368

[0008] Patent Document 3: Japanese Patent Application Publication No. 2013-119123

[0009] Here, for example, although the wall thickness of the workpiece having the functional layer is reduced in order to improve the functionality of the semiconductor device, it is difficult to process the workpiece alone because the workpiece is too thin. Therefore, it is necessary to attach the workpiece to a support member to facilitate handling such as conveying and grinding. When processing a workpiece attached to a support member using the workpiece processing device of patent documents 1 to 3, it is possible to consider setting the support member to be flat and then measuring the thickness of the workpiece. However, the support member is not completely flat and has a thickness deviation. In particular, for example, when the TTV (Total Thickness Variation) of the workpiece is set to 0.1 μm, it is difficult to adjust the thickness of the workpiece with high precision without considering the deviation of the thickness of the support member.

[0010] On the other hand, in order to adjust the thickness of the workpiece with high precision, it is not enough to adjust it only by considering the deviation of the thickness of the supporting parts. That is, in the grinding of the workpiece, it is necessary to consider the influence of the thermal expansion of the workpiece caused by friction. Specifically, the influence of the high temperature of the grinding tool and / or the chuck table holding the workpiece and the accompanying thermal expansion of various components on the workpiece cannot be ignored due to the operation time of the workpiece processing device. However, the workpiece processing devices of Patent Documents 1 to 3 do not adjust the thickness of the workpiece in consideration of the thermal influence.

[0011] Furthermore, the workpiece processing device of Patent Document 3 temporarily stops the finish grinding of the workpiece to measure the thickness of the workpiece and performs tilt adjustment based on the measured thickness of the workpiece. Since the workpiece processing device temporarily stops the finish grinding of the workpiece, there is a problem from the perspective of workpiece throughput. Summary of the invention

[0012] The present invention is completed in view of the above situation, and its purpose is to provide a workpiece processing device, which can adjust the thickness of the workpiece while taking into account the thickness deviation of the supporting member and the thermal effect on the workpiece when the workpiece is bonded to the supporting member for processing, thereby further improving productivity.

[0013] In order to solve the above-mentioned problems, the present invention proposes the following technical solutions.

[0014] (1) A workpiece processing device according to one embodiment of the present invention includes: a workpiece grinding mechanism for grinding a surface of a workpiece stacked on a support member in sequence at least at a first processing position and a second processing position; a chuck table for rotating and holding the workpiece; a chuck table adjustment mechanism for adjusting an inclination angle of the chuck table; an indexing table for sequentially transporting the chuck table to the first processing position and the second processing position; a measuring mechanism for optically non-contactly measuring a thickness of the workpiece after processing; and a control mechanism for controlling the chuck table adjustment mechanism based on a measurement value measured by the measuring mechanism to adjust the inclination angle, the measuring mechanism comprising: The first measuring mechanism is used to measure the thickness while the workpiece is transported from the first processing position to the second processing position after processing at the first processing position is completed; the second measuring mechanism is used to measure the thickness while the workpiece is transported from the second processing position to another position after processing at the second processing position is completed. The workpiece processing device is constructed as follows: in order to adjust the thickness of the workpiece, the inclination angle of the chuck table at the second processing position is adjusted based on the measurement value of the first measuring mechanism, and in order to process a new workpiece next, the measurement value of the second measuring mechanism is added to the adjustment of the inclination angle of the chuck table at the second processing position.

[0015] According to the workpiece processing device, a workpiece stacked on a support member is ground (processed) at a first processing position, and the thickness of the workpiece is measured by a first measuring mechanism while the workpiece is transported from the first processing position to a second processing position. Thus, the deviation of the support member can be measured by the first measuring mechanism. Based on the measured value, the inclination angle (inclination angle) of the chuck table at the second processing position is adjusted by a control mechanism so that the wafer can be ground into a target shape. Therefore, the workpiece can be ground (processed) while taking into account the thickness deviation of the support member.

[0016] Furthermore, while the workpiece ground at the second processing position is being transported from the second processing position to another position, the thickness of the workpiece is measured by the second measuring mechanism. Here, the measured thickness of the workpiece is different (deviation) from the target shape of the workpiece due to the heat effect caused by grinding. The deviation of the thickness of the workpiece caused by the heat effect is measured by the second measuring mechanism. The control mechanism adds the deviation of the thickness of the wafer W caused by the heat effect measured by the second measuring mechanism 32 as information for adjusting the inclination angle of the chuck table 12 on the fine grinding worktable ST4. Therefore, for the new workpiece to be processed next, the workpiece can be ground (processed) at the second processing position in a state where the deviation caused by the heat effect is taken into account.

[0017] Thus, when the workpiece is attached to the support member for processing, the thickness of the workpiece can be adjusted in consideration of the thickness deviation of the support member and the thermal effect on the workpiece. Thus, the workpiece stacked on the support member can be ground with high precision and accuracy according to the target shape.

[0018] Furthermore, the thickness of the workpiece can be measured by the first measuring mechanism while the workpiece ground at the first processing position is transported from the first processing position to the second processing position. Furthermore, the thickness of the workpiece can be measured by the second measuring mechanism while the workpiece ground at the second processing position is transported from the second processing position to another position. Thus, the production volume can be improved without, for example, stopping the grinding of the workpiece to measure the thickness of the workpiece.

[0019] (2) In the workpiece processing device of the above (1), the workpiece grinding mechanism may include a rough grinding section for performing rough grinding on the workpiece, an intermediate grinding section for performing intermediate grinding on the workpiece after the rough grinding, and a fine grinding section for performing fine grinding on the workpiece after the intermediate grinding, wherein the intermediate grinding section can be used to perform the intermediate grinding on the workpiece transported to the first processing position, and the fine grinding section can be used to perform the fine grinding on the workpiece transported to the second processing position.

[0020] According to the workpiece processing device, as a workpiece grinding mechanism, three grinding parts, namely a rough grinding part, a medium grinding part and a fine grinding part, are provided. Furthermore, the medium grinding part is used to perform medium grinding on the workpiece transported to the first processing position, and the fine grinding part is used to perform fine grinding on the workpiece transported to the second processing position. Therefore, the rough grinding part can be used to perform rough grinding on the workpiece before the medium grinding part is used to perform medium grinding on the workpiece. Therefore, when the medium grinding part is used to perform medium grinding on the workpiece, the medium grinding can be performed on the workpiece with high precision. Therefore, the workpiece can be accurately ground with higher precision in accordance with the target shape.

[0021] (3) In the workpiece processing device of the above (2), the control mechanism may be constructed such that, for a new workpiece to be processed next, the measurement value of the second measuring mechanism is added to the adjustment of the inclination angle of the chuck table only in the intermediate grinding, or is added to the adjustment of the inclination angle of the chuck table in the intermediate grinding and the fine grinding.

[0022] According to the workpiece processing apparatus described above, the result of shape measurement after finish grinding can be selectively reflected in intermediate grinding and finish grinding of the next workpiece, so that the next workpiece can be processed with higher accuracy.

[0023] According to the present invention, when a workpiece is bonded to a support member and processed, the thickness of the workpiece can be adjusted in consideration of thickness variations of the support member and thermal effects on the workpiece, thereby further improving productivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a plan view showing the basic structure of the workpiece processing device according to the embodiment of the present invention.

[0025] Figure 2 This is a conceptual diagram for explaining the process of grinding a wafer using the workpiece processing apparatus according to this embodiment.

[0026] Figure 3 It is a cross-sectional view showing a state after rough grinding and intermediate grinding are performed on the wafer in the stacked wafer of this embodiment.

[0027] Figure 4 This is a cross-sectional view showing a state in which the wafer in the stacked wafer according to this embodiment has been finish ground.

[0028] Figure 5 1 is a cross-sectional view of a wafer showing a target shape in the stacked wafer of this embodiment. DETAILED DESCRIPTION

[0029] Hereinafter, a workpiece processing device according to an embodiment of the present invention will be described with reference to the accompanying drawings. It should be noted that in the following embodiments, when the number, value, amount, range, etc. of structural elements are mentioned, except for cases where it is specifically stated or the case where it is obviously limited to a specific number in principle, it is not limited to the specific number and can be more than or less than the specific number.

[0030] Furthermore, when referring to the shape or positional relationship of a component or the like, shapes that are substantially close to or similar to the shape or the like are included, except for cases where it is particularly noted or where it is obvious that this is not the case in principle.

[0031] In addition, the drawings may sometimes exaggerate features such as enlargement to facilitate understanding of features, and the dimensional ratios of structural elements may not necessarily be the same as the actual ones. In addition, in cross-sectional views, hatching of some structural elements may sometimes be omitted to facilitate understanding of the cross-sectional structure of the structural elements.

[0032] Figure 1 It is a plan view showing the basic structure of the workpiece processing device. Figure 2 This is a conceptual diagram for explaining the process of grinding a wafer using a workpiece processing apparatus. Figure 3 It is a cross-sectional view showing a state after rough grinding and intermediate grinding are performed on a wafer in a stacked wafer.

[0033] like Figure 1 to Figure 3 As shown, the workpiece processing device 1 is a device that grinds the workpiece W into a target shape (target thickness) with high precision by holding the workpiece W at a predetermined grinding position and grinding the surface Ws of the held workpiece W. Here, the thin plate-shaped workpiece W is processed in a state of being stacked on the stacking surface SWs of the support member (support wafer) SW. In the following, the workpiece W is referred to as a "wafer W" for explanation. The wafer W is a silicon wafer, a silicon carbide wafer, etc., but is not limited thereto. In addition, a stacked body in which the wafers W are stacked on the stacking surface SWs of the support member SW is referred to as a "stacked wafer 100" for explanation.

[0034] The workpiece processing device 1 includes a holding unit 2, a workpiece grinding mechanism 3, a measuring mechanism 4, and a control mechanism 5. The holding unit 2 includes an indexing table 11, a chuck table 12, and a tilting mechanism (chuck table adjustment mechanism) 13 (see Figure 2 ). A partition plate 15 is provided above the indexing table 11. The partition plate 15 is formed in a cross shape.

[0035] The indexing table 11 is divided into four tables at equal intervals by a partition plate 15: an alignment table ST1, a rough grinding table ST2, an intermediate grinding table (first processing position ST3), and a fine grinding table (second processing position ST4. Figure 1 On the paper of FIG. 1, an alignment table ST1, a rough grinding table ST2, a medium grinding table ST3 and a fine grinding table ST4 are sequentially arranged in a counterclockwise direction. Figure 1 The counterclockwise direction on the paper surface of FIG. 1 is simply referred to as “counterclockwise direction.” The partition plate 15 prevents the machining fluid used at each worktable from scattering to the adjacent worktable.

[0036] The indexing table 11 is supported so as to be rotatable counterclockwise about the rotating shaft 18. Four chuck tables 12 are provided on the indexing table 11. The four chuck tables 12 are provided on the indexing table 11 so as to be arranged on the alignment table ST1, the rough grinding table ST2, the intermediate grinding table ST3, and the fine grinding table ST4.

[0037] The indexing table 11 rotates 90 degrees in each step in the counterclockwise direction. As a result, the chuck table 12 is sequentially conveyed (transferred) in the counterclockwise direction to the alignment table ST1, the rough grinding table ST2, the intermediate grinding table ST3, and the fine grinding table ST4.

[0038] The chuck table 12 is configured to be rotatable around the rotation axis O via a tilting mechanism 13 described later. The chuck table 12 has an adsorbent 12a made of a ceramic with a porous (porous) structure buried in the upper surface. The chuck table 12 uses negative pressure to adsorb the stacked wafer 100 placed on the adsorbent 12a. As a result, the center of the stacked wafer 100 is aligned with the rotation axis O of the chuck table 12, and the stacked wafer 100 is rotated and held as a whole by vacuum adsorbing it to the adsorbent 12a.

[0039] On the chuck table 12 of the alignment table ST1, the stacked wafer 100 transported by a transport device (not shown) is held by suction in a state aligned at a predetermined position. The index table 11 is rotated 90° counterclockwise to transport the stacked wafer 100 held by suction on the chuck table 12 to the rough grinding table ST2.

[0040] The surface Ws of the wafer W of the stacked wafer 100 transported to the rough grinding station ST2 is roughly ground (processed) to the first surface Ws1 by the rough grinding unit 21 described later. The roughly ground stacked wafer 100 is transported to the intermediate grinding station ST3 by the counterclockwise rotation of the indexing table 11.

[0041] The surface Ws of the wafer W of the stacked wafer 100 conveyed to the intermediate grinding worktable ST3 is ground (processed) to the second surface Ws2 by the intermediate grinding unit 22 described later. The intermediate ground stacked wafer 100 is conveyed to the fine grinding worktable ST4 by rotating the indexing table 11 counterclockwise by 90°.

[0042] The surface Ws of the wafer W of the stacked wafer 100 transported to the fine grinding worktable ST4 is finely ground (finished) to the third surface Ws3 by the fine grinding section 23 described later. The stacked wafer 100 after fine grinding is transported to the alignment worktable ST1 by rotating the indexing table 11 counterclockwise by 90 degrees. The stacked wafer 100 transported to the alignment worktable ST1 is stored in a holder (not shown) from the chuck table 12 by a transport device (not shown) or the like.

[0043] The chuck table 12 is provided with a tilting mechanism 13. The tilting mechanism 13 tilts the rotation axis O of the chuck table 12 in the XY direction (see Figure 1 ) to adjust the tilt angle (tilt angle) θ of the chuck table 12. Therefore, the tilt mechanism 13 can adjust the tilt angle θ of the stacked wafer 100 held by the chuck table 12.

[0044] The workpiece grinding mechanism 3 grinds the surface of the stacked wafer 100 (that is, the surface Ws of the wafer W) held by the chuck table 12 on the rough grinding table ST2, the intermediate grinding table ST3 and the fine grinding table ST4 in sequence. The workpiece grinding mechanism 3 grinds the surface Ws of the wafer W to make the wafer W thinner. The workpiece grinding mechanism 3 includes a rough grinding section 21, an intermediate grinding section 22 and a fine grinding section 23.

[0045] The rough grinding section 21 includes a rough grinding tool 21a disposed above the rough grinding table ST2. The rough grinding tool 21a is supported by a feed device (not shown) so as to be able to move up and down. The rough grinding tool 21a rough grinds the surface Ws of the wafer W in the stacked wafer 100 held on the rough grinding table ST2.

[0046] The intermediate grinding section 22 includes an intermediate grinding tool 22a disposed above the intermediate grinding table ST3. The intermediate grinding tool 22a is supported by a feed device (not shown) so as to be able to move up and down. The intermediate grinding tool 22a performs intermediate grinding on the surface Ws of the wafer W in the stacked wafer 100 disposed on the intermediate grinding table ST3.

[0047] The fine grinding section 23 includes a fine grinding tool 23a disposed above the fine grinding table ST4. The fine grinding tool 23a is supported by a feed device (not shown) so as to be able to move up and down. The fine grinding tool 23a fine grinds the surface Ws of the wafer W in the stacked wafer 100 disposed on the fine grinding table ST4.

[0048] The measuring mechanism 4 measures the thickness of the wafer W after the intermediate grinding by the intermediate grinding tool 22a of the intermediate grinding section 22 in an optical non-contact manner, and measures the thickness of the wafer W after the fine grinding by the fine grinding tool 23a of the fine grinding section 23 in an optical non-contact manner. The measuring mechanism 4 includes a first measuring mechanism 31 and a second measuring mechanism 32.

[0049] The first measuring mechanism 31 is, for example, arranged at a position corresponding to the partition plate 15 that separates the intermediate grinding table ST3 and the fine grinding table ST4. Specifically, the first measuring mechanism 31 is arranged just above the transport path generated by the center of the stacked wafer 100 when the stacked wafer 100 is transported from the intermediate grinding table ST3 to the fine grinding table ST4 via the indexing table 11.

[0050] The first measuring mechanism 31 measures the thickness of the wafer W in an optical non-contact manner, for example, using a spectroscopic interference thickness gauge (NCIG: Non-contact In-process Gauge), but not limited thereto. After the intermediate grinding is completed on the intermediate grinding table ST3, the thickness of the wafer W is measured by the first measuring mechanism 31 while the stacked wafer 100 is transported from the intermediate grinding table ST3 to the fine grinding table ST4.

[0051] The second measuring mechanism 32 is, for example, arranged at a position corresponding to the partition plate 15 that separates the fine grinding table ST4 and the alignment table ST1. Specifically, the second measuring mechanism 32 is arranged just above the transport path generated by the center of the stacked wafer 100 when the stacked wafer 100 is transported from the fine grinding table ST4 to the alignment table ST1 via the indexing table 11.

[0052] The second measuring mechanism 32 is constructed in the same manner as the first measuring mechanism 31. That is, the second measuring mechanism 32 measures the thickness of the wafer W in an optical non-contact manner, for example, using a spectral interference thickness gauge (NCIG), but is not limited thereto. For example, after finishing the fine grinding on the fine grinding table ST4, while the stacked wafer 100 is transported from the fine grinding table ST4 to the alignment table ST1 (other position), the thickness of the wafer W is measured by the second measuring mechanism 32.

[0053] The control mechanism 5 controls the operation of the components constituting the workpiece processing device 1. The control mechanism 5 is composed of, for example, a CPU (Central Processing Unit) and a memory, etc. It should be noted that the function of the control mechanism 5 can be realized by controlling using software or by operating using hardware.

[0054] The control mechanism 5 controls the tilting mechanism 13 based on the measurement values ​​measured by the first measurement mechanism 31 and the second measurement mechanism 32, thereby adjusting the tilt angle θ of the chuck table 12. Specifically, the control mechanism 5 controls the tilting mechanism 13 of the fine grinding table ST4 based on the measurement value of the first measurement mechanism 31. By controlling the tilting mechanism 13 by the control mechanism 5, the tilt angle θ of the chuck table 12 is adjusted to adjust the thickness of the wafer W. In addition, the control mechanism 5 adds the measurement value of the second measurement mechanism 32 as information for adjusting the tilt angle θ of the chuck table 12 of at least one of the grinding table ST3 and the fine grinding table ST4 for the new wafer W to be processed next. For example, when the shape measurement result of the stacked wafer 100 obtained by the second measuring mechanism 32 shows that the shape of the stacked wafer 100 deviates greatly from the target shape, the control mechanism 5 preferably adds the measured value of the second measuring mechanism 32 as information for adjusting the tilt angle θ of the chuck table 12 in the tilt adjustment of only the intermediate grinding table ST3 or the tilt adjustment of both the intermediate grinding table ST3 and the fine grinding table ST4 for the new wafer W to be processed next. In the past, the angle error (tilt error) of the intermediate grinding table and the fine grinding table was combined and adjusted to be as small as possible, and the remaining smaller angle error was also adjusted in advance in the fine grinding by taking the shape measurement result after the intermediate grinding into consideration. However, since the influence of grinding heat in the intermediate grinding and the fine grinding is different, the remaining smaller angle error has deviations in each grinding. In this embodiment, by selectively reflecting the result of the shape measurement after the fine grinding in the intermediate grinding and the fine grinding of the next wafer W, high-precision processing can be performed. In addition, when the deviation between the shape of the stacked chip 100 and the target shape is small, the control mechanism 5 can add the measurement value of the second measuring mechanism 32 as information for adjusting the inclination angle θ of the chuck table 12 in the inclination adjustment of the fine grinding worktable ST4 for the new chip W to be processed next.

[0055] Next, based on Figure 1 to Figure 5 The steps of grinding the wafer W by the workpiece processing apparatus 1 will be described.

[0056] Figure 4 This is a cross-sectional view showing a state where a wafer in a stacked wafer is finish-ground. Figure 5 is a cross-sectional view showing a wafer of a target shape in a stacked wafer. Figure 5 The wafer of the target shape shown is referred to as a "target wafer TW".

[0057] like Figures 1 to 3As shown, the surface Ws of the wafer W is roughly ground to the first surface Ws1 on the rough grinding table ST2 using the rough grinding tool 21a. After the wafer W is roughly ground, the indexing table 11 is rotated 90° counterclockwise in the direction of arrow A. Thus, the stacked wafer 100 is transported from the rough grinding table ST2 to the intermediate grinding table ST3.

[0058] After the laminated wafer 100 is transferred to the intermediate grinding station ST3, the surface Ws of the wafer W is intermediately ground to the second surface Ws2 using the intermediate grinding tool 22a on the intermediate grinding station ST3. After the intermediate grinding of the wafer W, the indexing table 11 is rotated 90° counterclockwise in the direction of arrow A. Thus, the laminated wafer 100 is transferred from the intermediate grinding station ST3 to the fine grinding station ST4.

[0059] While being transported from the grinding table ST3 to the fine grinding table ST4, the center of the stacked wafer 100 passes directly below the first measuring mechanism 31 while rotating about the rotation axis O. When the stacked wafer 100 passes directly below the first measuring mechanism 31 while rotating about the rotation axis O, the first measuring mechanism 31 can expand the measurement location to the entire surface including the center of the wafer W. Therefore, the thickness of the entire surface of the wafer W can be measured by the first measuring mechanism 31. In addition, the deviation of the thickness of the support member SW can be measured in the entire area of ​​the support member SW. Thus, the thickness of the wafer W can be measured while also considering the thickness deviation of the support member SW.

[0060] The control mechanism 5 controls the tilting mechanism 13 of the fine grinding table ST4 based on the deviation of the thickness of the support member SW, thereby adjusting the tilting angle θ of the chuck table 12. Specifically, by controlling the tilting mechanism 13 to adjust the tilting angle θ of the chuck table 12, the wafer W transported to the fine grinding table ST4 can be ground into a target wafer TW (see Figure 5 )’s target shape.

[0061] It should be noted that the measurement position of the first measurement mechanism 31 can be arbitrarily adjusted according to the transport speed of the indexing table 11 and the rotation speed of the chuck table 12 (that is, the stacked wafer 100). For example, by increasing the rotation speed of the chuck table 12, the number of times the measurement position of the first measurement mechanism 31 is scanned in the radial direction of the wafer W can be increased.

[0062] like Figure 1 , Figure 2 , Figure 4 , Figure 5As shown in FIG. 1 , the surface Ws of the wafer W is fine-ground to the third surface Ws3 by the fine-grinding grinding tool 23a while the inclination angle θ of the chuck table 12 is adjusted on the fine-grinding worktable ST4. Thus, the surface Ws of the wafer W can be fine-ground along the stacking surface SWs of the support member SW. Here, the fine-grinding of the wafer W has a thermal effect on the wafer W. Therefore, the thickness of the wafer W after fine-grinding is different (deviation) from the thickness of the target wafer TW.

[0063] After the wafer W is finish ground, the indexing table 11 is rotated 90 degrees counterclockwise in the direction of arrow A. Thus, the laminated wafer 100 is transferred from the finish grinding stage ST4 to the alignment stage ST1.

[0064] When the stacked wafer 100 is being transported from the fine grinding table ST4 to the alignment table ST1, the center of the stacked wafer 100 passes directly below the second measuring mechanism 32 while rotating about the rotation axis O. As with the first measuring mechanism 31, when the center of the stacked wafer 100 passes directly below the second measuring mechanism 32 while rotating about the rotation axis O, the second measuring mechanism 32 can expand the measurement location to the entire surface including the center of the wafer W. Therefore, the thickness of the entire surface of the wafer W can be measured by the second measuring mechanism 32. Thus, based on the thickness of the entire surface of the wafer W, the difference (deviation) in thickness relative to the target wafer TW caused by thermal influence can be measured.

[0065] It should be noted that, similar to the first measuring mechanism 31, the measuring position of the second measuring mechanism 32 can be arbitrarily adjusted according to the transport speed of the indexing table 11 and the rotation speed of the chuck table 12 (that is, the stacked wafer 100). For example, by increasing the rotation speed of the chuck table 12, the number of times the measuring position of the first measuring mechanism 31 is scanned in the radial direction of the wafer W can be increased.

[0066] The control mechanism 5 takes into account the deviation of the thickness of the target wafer TW as information for adjusting the inclination angle θ of the chuck table 12 of the fine grinding table ST4 for the next processed new wafer W. In other words, the inclination angle θ of the chuck table 12 of the fine grinding table ST4 is readjusted (adjusted) to an angle that enables the wafer W to be ground into the target shape, taking into account the deviation of the thickness of the wafer W from the target wafer TW caused by the thermal influence.

[0067] The next new wafer W to be processed is finely ground while the inclination angle θ of the chuck table 12 of the fine grinding worktable ST4 is readjusted. Therefore, the thickness of the next new wafer W to be processed can be adjusted in consideration of the thickness deviation of the support member SW and the thermal effect on the wafer W. Thus, the next new wafer W to be processed can be formed into a target shape (see Figure 5 ) to grind the wafer W stacked on the support member SW with high precision and accuracy.

[0068] According to the workpiece processing device 1 described above, Figures 1 to 3 As shown, the wafer W of the stacked wafer 100 is ground to the second surface Ws2 on the intermediate grinding station ST3. While the stacked wafer 100 after the intermediate grinding is transferred from the intermediate grinding station ST3 to the fine grinding station ST4, the thickness of the wafer W is measured by the first measuring mechanism 31. Thus, the deviation of the support member SW can be measured by the first measuring mechanism 31.

[0069] Based on the measured thickness of the wafer W and the deviation of the support member SW, the inclination angle θ of the chuck table 12 of the fine grinding table ST4 is adjusted so that the wafer W can be fine ground to the target wafer TW (see Figure 5 Therefore, in the fine grinding workbench ST4, the wafer W can be finely ground in consideration of the thickness deviation of the support member SW.

[0070] Furthermore, if Figure 1 , Figure 2 , Figure 4 As shown in FIG. 1 , while the wafer W ground on the fine grinding table ST4 is transferred from the fine grinding table ST4 to the alignment table ST1, the thickness of the wafer W is measured by the second measuring mechanism 32. Here, due to the heat effect caused by the fine grinding, the measured thickness of the wafer W is different from the target wafer TW (refer to FIG. Figure 5 ) thickness produces differences (deviations).

[0071] The second measuring mechanism 32 measures the deviation of the thickness of the wafer W caused by the heat. The deviation of the thickness of the wafer W caused by the heat measured by the second measuring mechanism 32 is taken into account as information for adjusting the inclination angle θ of the chuck table 12 on the fine grinding table ST4. Therefore, for a new wafer W to be processed next, the wafer W can be finely ground on the fine grinding table ST4 in a state in which the deviation caused by the heat is taken into account.

[0072] Thus, when processing the stacked wafer 100 in which the wafer W is bonded to the support member SW, the thickness of the wafer W can be adjusted in consideration of the variation in thickness of the support member SW and the thermal effect on the wafer W. Thus, the target wafer TW (see Figure 5 ) of the target shape, and grinds the wafer W stacked on the supporting member SW with high precision and accuracy.

[0073] In addition, if Figure 1 , Figure 2As shown, while the wafer W after intermediate grinding on the intermediate grinding station ST3 is transferred from the intermediate grinding station ST3 to the fine grinding station ST4, the thickness of the wafer W can be measured by the first measuring mechanism 31. In addition, while the wafer W after fine grinding on the fine grinding station ST4 is transferred from the fine grinding station ST4 to the alignment station ST1, the thickness of the wafer W can be measured by the second measuring mechanism 32. Therefore, the production throughput can be improved without, for example, stopping the grinding of the wafer W to measure the thickness of the wafer W.

[0074] In addition, the workpiece grinding mechanism 3 includes three grinding sections, namely, a rough grinding section 21, a medium grinding section 22, and a fine grinding section 23. Therefore, the rough grinding section 21 can be used to perform rough grinding on the wafer W before the medium grinding section 22 performs medium grinding on the wafer W. Thus, when the medium grinding section 22 performs medium grinding on the wafer W, the medium grinding can be performed with high precision. Therefore, the wafer W can be accurately ground with higher precision in accordance with the target shape.

[0075] It should be noted that the technical scope of the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention.

[0076] For example, in the above embodiment, although the example of having three grinding parts, namely the rough grinding part 21, the intermediate grinding part 22 and the fine grinding part 23, as the workpiece grinding mechanism 3 and grinding the wafer W in stages on the three grinding worktables ST2, ST3 and ST4 is described, it is not limited to this. As another example, for example, it is also possible to have two grinding parts as the workpiece grinding mechanism 3 and grind the wafer W in stages on the two grinding worktables. Furthermore, the fine machining process may be set as a grinding process performed by a grinding cloth, and the wafer W may be processed in stages in the order of rough grinding, fine grinding and grinding.

[0077] In addition, in the above embodiment, although the first measuring mechanism 31 is arranged at a position corresponding to the partition plate 15 separating the intermediate grinding table ST3 and the fine grinding table ST4, it can also be arranged at a position corresponding to the partition plate 15 separating the rough grinding table ST2 and the intermediate grinding table ST3.

[0078] Furthermore, the components in the present embodiment may be appropriately replaced with known components without departing from the spirit of the present invention.

[0079] Description of Reference Numerals

[0080] 1Workpiece processing device

[0081] 2 Holding unit

[0082] 3. Workpiece grinding mechanism

[0083] 4. Measurement mechanism

[0084] 5 Control mechanism

[0085] 11 Indexing table

[0086] 12 chuck tables

[0087] 13. Tilt mechanism (chuck table adjustment mechanism)

[0088] 21 Rough grinding department

[0089] 22 Grinding Department

[0090] 23 Fine grinding department

[0091] 31First measurement mechanism

[0092] 32 Second measurement mechanism

[0093] ST2 Rough Grinding Table

[0094] ST3 medium grinding table (first processing position)

[0095] ST4 fine grinding table (second processing position)

[0096] SW support parts

[0097] W wafer (workpiece)

[0098] Surface of Ws wafer

[0099] Ws1 First surface

[0100] Ws2 Second surface

[0101] Ws3 Third surface

[0102] θ Tilt angle

Claims

1. A workpiece processing device, characterized in that: include: a workpiece grinding mechanism for grinding the surface of the workpiece stacked on the support member in sequence at least at a first processing position and a second processing position; A chuck table, used for rotating and holding the workpiece; A chuck table adjustment mechanism, used to adjust the inclination angle of the chuck table; An indexing table, used for sequentially transporting the chuck table to the first processing position and the second processing position; A measuring mechanism for measuring the thickness of the workpiece after processing in an optical non-contact manner; and a control mechanism for controlling the chuck stage adjustment mechanism based on the measurement value measured by the measurement mechanism to adjust the tilt angle, The measuring mechanism comprises: a first measuring mechanism for measuring the thickness of the workpiece while the workpiece is being transported from the first processing position to the second processing position after processing at the first processing position is completed; The second measuring mechanism is used to measure the thickness of the workpiece while the workpiece is being transported from the second processing position to another position after the processing at the second processing position is completed. The workpiece processing device is constructed as follows: In order to adjust the thickness of the workpiece, the inclination angle of the chuck table at the second processing position is adjusted based on the measurement value of the first measurement mechanism, and For a new workpiece to be processed next, the measurement value of the second measuring mechanism is added to the adjustment of the tilt angle of the chuck table at the second processing position.

2. The workpiece processing device according to claim 1, characterized in that: The workpiece grinding mechanism includes a rough grinding section for performing rough grinding on the workpiece, an intermediate grinding section for performing intermediate grinding on the workpiece after the rough grinding, and a finish grinding section for performing finish grinding on the workpiece after the intermediate grinding. The intermediate grinding section is used to perform the intermediate grinding on the workpiece transported to the first processing position. The finish grinding section is for performing the finish grinding on the workpiece conveyed to the second processing position.

3. The workpiece processing device according to claim 2, characterized in that: The control mechanism is configured to add the measured value of the second measuring mechanism to the adjustment of the tilt angle of the chuck table only in the intermediate grinding, or to the adjustment of the tilt angle of the chuck table in the intermediate grinding and the fine grinding, for a new workpiece to be processed next.

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