Physical vapor deposition equipment

Abstract

The invention provides physical vapor deposition equipment which is applied to the technical field of semiconductors. Specifically, a part of components in the physical vapor deposition equipment are transformed into one or more electromagnets, then each electromagnet is electrically connected with a control power supply, and the magnitude and existence of electrifying current of the electromagnets can be respectively controlled through the control power supplies which are correspondingly and electrically connected with different electromagnets; according to the invention, a plurality of electromagnets are arranged in the reaction chamber, so that the plurality of electromagnets generate magnetic fields with controllable distribution in different regions, and the concentration of ferromagnetic particles such as nickel and the like in the reaction chamber is redistributed under the control of the magnetic fields, so that homogeneous metal films with different thicknesses are formed on different region surfaces (different regions) of a single substrate to be coated in the same deposition process; and the uniformity and filling performance of the homogeneous metal film can be simply and efficiently adjusted by controlling the magnetic field, namely, the purposes of improving the deposition speed, the overall deposition uniformity, the deposition efficiency and the fineness of the metal film are achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to a physical vapor deposition device. Background Art

[0002] In semiconductor processes, methods for forming thin films include physical vapor deposition (PVD) or chemical vapor deposition, etc. Physical vapor deposition can be further divided into two forms: evaporation and sputtering. Among them, sputtering uses ions generated in a plasma to bombard a target, causing atoms on the target to be sputtered out. These sputtered atoms then move in a certain direction to a substrate and deposit on the substrate to form a thin film. This method is mainly used for depositing metal and metal compound thin films (including metal interconnect seed layers, barrier layers, etc.).

[0003] However, with the advancement of technology nodes, ferromagnetic metals such as nickel are introduced into chip integrated manufacturing. Among them, nickel PVD is a commonly used device for depositing corresponding metal film layers. Under normal conditions, nickel particles sputtered and excited in a nickel PVD process device need to be further ionized. At the same time, under the action of an electric field generated by a bias voltage of a lower electrode plate, the particles deposit into a film on the substrate surface.

[0004] It should be noted that during this process, the lower electrode plate of the physical vapor deposition device is an integral block structure, and its generated electric field has limitations in controlling nickel particles, that is, the ability to finely control the thickness distribution of the metal thin film in each sub-region of the substrate and the film filling ability are limited. At the same time, the deposition of special requirements for nickel metal thin films (such as the deposition of controllable different-region and different-thickness metal thin films on a single silicon wafer) cannot be achieved, that is, it cannot be applied to test wafers or standard wafers with special requirements. Summary of the Invention

[0005] The purpose of the present invention is to provide a physical vapor deposition device to form homogeneous metal thin films with different thicknesses on different regional surfaces (different regions) of a single substrate to be coated in the same deposition process, and to simply and efficiently adjust the uniformity and filling performance of the homogeneous metal thin film by controlling the magnetic field, obtain a highly uniform metal thin film, and further achieve the purpose of improving the deposition speed, overall deposition uniformity, deposition efficiency, and fineness of the metal thin film.

[0006] In a first aspect, to solve the above technical problems, the present invention provides a physical vapor deposition device, which at least includes:

[0007] A reaction chamber;

[0008] A sputtering component is disposed at the top of the reaction chamber and includes a first electrode plate and a target disposed at the bottom of the first electrode plate. The bottom of the target faces the bottom of the reaction chamber and is used to generate a sputtering plating source.

[0009] A carrier component is disposed at the bottom of the reaction chamber and is located below the target. The carrier component includes:

[0010] A base for placing at least one substrate to be coated.

[0011] A second electrode plate is stacked at the bottom of the base and is parallel to the first electrode plate. The second electrode plate includes N electromagnets and M insulating components disposed adjacent to the N electromagnets, and is used to generate a controllable magnetic field for the heterogeneous distribution of the sputtering plating source in the reaction chamber by controlling the on-off state and the energizing current of the electromagnets, where N≥1 and M = N - 1.

[0012] In some alternative examples, the material of the target includes ferromagnetic metallic elements or compounds containing nickel.

[0013] In some alternative examples, the material of the electromagnet includes at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite, or silicon steel sheet.

[0014] In some alternative examples, the electromagnet has the same shape as the insulating component, and the shape of the electromagnet includes a linear shape or a horseshoe shape.

[0015] In some alternative examples, the sputtering component further includes: a first control power supply disposed on the top of the first electrode plate and electrically connected to the first electrode plate for controlling the electromagnet.

[0016] In some alternative examples, the carrier component further includes: a second control power supply electrically connected to the second electrode plate.

[0017] In some alternative examples, the second control power supply includes:

[0018] A plurality of second sub-control power supplies, each of the second sub-control power supplies being electrically connected to one of the electromagnets respectively, for inputting an energizing current to each of the electromagnets respectively, and adjusting the concentration distribution of ferromagnetic particles in the sputtering plating source in the reaction chamber by controlling the magnitude of the energizing current, and further attracting the ferromagnetic particles to deposit on the surface of the area to be deposited of the substrate to be coated.

[0019] In some alternative examples, the second control power supply is a DC power supply or an AC power supply.

[0020] In some of the optional examples, the current of the second control power supply includes pulsed current, radio frequency current or periodic current.

[0021] In a second aspect, based on the same inventive concept, the present invention also provides a physical vapor deposition apparatus, comprising:

[0022] A reaction chamber;

[0023] A sputtering component, disposed on the top of the reaction chamber, includes a first electrode plate and a target disposed at the bottom of the first electrode plate, the bottom of the target faces the bottom of the reaction chamber and is used to generate a sputtering plating source;

[0024] A carrier component, disposed at the bottom of the reaction chamber and below the target, and the carrier component includes:

[0025] A base for placing at least one substrate to be coated; and

[0026] At least one electromagnet component, disposed on the inner sidewall of the reaction chamber, and includes N electromagnets and M insulating components adjacent to the N electromagnets, for generating a magnetic field that enables the controllable distribution of the sputtering plating source in different regions within the reaction chamber by controlling the on-off state and the energizing current of the electromagnets, where N≥1 and M = N - 1.

[0027] In some of the optional examples, the physical vapor deposition apparatus may include:

[0028] A first electromagnet component, disposed on one sidewall within the reaction chamber; and

[0029] A second electromagnet component, disposed on the other sidewall within the reaction chamber, and parallel and opposite to the first electromagnet component;

[0030] Wherein, both the first electromagnet component and the second electromagnet component include N electromagnets and M insulating components adjacent to the N electromagnets, for generating a magnetic field that enables the controllable distribution of the sputtering plating source in different regions within the reaction chamber by controlling the on-off state and the energizing current of the electromagnets, where N≥1 and M = N - 1.

[0031] In some of the optional examples, the material of the target includes ferromagnetic metal elements or compounds of nickel.

[0032] In some of the optional examples, the material of the electromagnet includes at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite or silicon steel sheet.

[0033] In some alternative examples, the sputtering component further includes: a first control power supply, disposed on the top of the first electrode plate and electrically connected to the first electrode plate.

[0034] In some alternative examples, the carrier component further includes:

[0035] a second control power supply, electrically connected to the electromagnet component for controlling the electromagnet.

[0036] In some alternative examples, the second control power supply includes:

[0037] a plurality of second sub-control power supplies, each of the second sub-control power supplies being electrically connected to one of the electromagnets respectively, for inputting energizing current to each of the electromagnets respectively, and adjusting the concentration distribution of ferromagnetic particles in the sputtering plating source in the reaction chamber by controlling the magnitude of the energizing current, and further attracting the ferromagnetic particles to deposit on the surface of the area to be coated of the substrate to be coated.

[0038] In some alternative examples, the physical vapor deposition device may further include:

[0039] at least one variable resistor, disposed between the electromagnet and the second control power supply, for controlling the on-off state and the magnitude of the energizing current of the electromagnet by controlling the resistance value of the variable resistor.

[0040] In some alternative examples, the second control power supply is a DC power supply or an AC power supply, and the current of the second control power supply includes pulsed current, radio frequency current or periodic current.

[0041] Compared with the prior art, the technical solution of the present invention has at least one of the following beneficial effects:

[0042] In the physical vapor deposition device provided by the present invention, some components in the physical vapor deposition device, such as the second electrode plate, are transformed into one or more electromagnets isolated by an insulating component, or at least one group of electromagnets composed of one or more electromagnets isolated by an insulating component is provided on the inner side wall of its reaction chamber, and then a control power supply is electrically connected to each of the electromagnets.

[0043] The unexpected effect is that by controlling the power supplies electrically connected to the respective electromagnets, the magnitude and presence / absence of the energizing current of the multiple electromagnets can be separately controlled, enabling the generation of a magnetic field with a controllable distribution in different regions by the multiple electromagnets. Also, ferromagnetic particles such as nickel sputtered from the sputtering plating source can be redistributed in concentration in the reaction chamber of the physical vapor deposition equipment under the control of the magnetic field. Furthermore, homogeneous metal films with different thicknesses can be formed on different area surfaces (different regions) of a single substrate to be coated in the same deposition process. Additionally, by controlling the magnetic field, the uniformity and filling performance of the homogeneous metal film can be simply and efficiently adjusted to obtain a highly uniform metal film, thereby achieving the purpose of increasing the deposition speed, overall deposition uniformity, deposition efficiency, and fineness of the metal film.

[0044] Furthermore, due to the magnetic field with a controllable distribution in different regions generated by the multiple electromagnets, the ferromagnetic particles such as nickel sputtered can be directly attracted and controlled, thus eliminating the need for ionization treatment, that is, omitting the ionization component, simplifying the physical vapor deposition equipment, reducing costs, and improving equipment performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] Figure 1 FIG. is a schematic structural diagram of a physical vapor deposition equipment provided in an embodiment of the present invention with at least one electromagnet disposed in a second electrode plate.

[0046] Figure 2 FIG. is a schematic structural diagram of a plurality of electromagnets and a plurality of insulating components included in a second electrode plate provided in an embodiment of the present invention.

[0047] Figure 3 FIG. is another schematic structural diagram of a plurality of electromagnets and a plurality of insulating components included in a second electrode plate provided in an embodiment of the present invention.

[0048] Among them, the reference numerals are as follows:

[0049] 100 - reaction chamber;

[0050] 10 - sputtering component;

[0051] 20 - carrying component;

[0052] 11 - first electrode plate;

[0053] 12 - target;

[0054] 13 - first control power supply;

[0055] 21 - base;

[0056] 22 - second electrode plate;

[0057] 221 - Electromagnet;

[0058] 222 - Insulating component;

[0059] 23 - Second control power supply;

[0060] 231 - Second sub - control power supply. Detailed implementation manners

[0061] In order to make the technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be further elaborated in detail below in conjunction with the drawings and embodiments. Although the exemplary implementation methods of the present invention are shown in the drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the implementation manners described herein. On the contrary, these implementation manners are provided to enable a more thorough understanding of the present invention and to be able to convey the scope of the present invention completely to those skilled in the art.

[0062] In the following paragraphs, the present invention will be described more specifically by way of example with reference to the drawings. The advantages and features of the present invention will be clearer according to the following description and claims. It should be noted that the drawings are all in a very simplified form and use non - precise scales, only for the purpose of facilitating and clearly assisting in explaining the purpose of the embodiments of the present invention. It can be understood that the meanings of "on...", "above...", and "overhead..." in the present invention should be interpreted in the broadest way, so that "on..." not only means "on" something "without any intermediate features or layers (i.e., directly on something)", but also includes the meaning of "on" something "with intermediate features or layers".

[0063] In addition, for the convenience of description, spatial relative terms such as "on...", "above...", "overhead...", "upper", "upper part", etc. can be used in this article to describe the relationship between one element or feature and another element or feature as shown in the figures. Except for the orientation depicted in the drawings, spatial relative terms are intended to cover different orientations of the device during use or operation. The device can be oriented in other ways (rotated 90 degrees or in other orientations) and the spatial relative descriptive words used herein can be interpreted accordingly.

[0064] In the embodiments of the present invention, terms such as "first", "second", etc. are used to distinguish similar objects and do not necessarily have to be used to describe a specific order or sequence. It should be noted that the technical solutions described in the embodiments of the present invention can be arbitrarily combined without conflict.

[0065] As can be seen from the background art, since the lower electrode plate of the existing physical vapor deposition equipment is an integral structure, during the sputtering process performed by this equipment, it can only form a metal thin film with the same thickness on the surface of a single wafer, substrate or base plate, and it is also difficult to control the deposition accuracy of this metal thin film.

[0066] Based on this problem, the researchers of the present invention proposed to apply the functional characteristic that one or more electromagnets arranged in sequence after being isolated by an insulating tape or insulating ring (i.e., the insulating component) can generate magnetic fields with different magnetic intensities on different deposition area surfaces of the substrate by controlling the magnitude of the current of the control power supply electrically connected to the electromagnet to the physical vapor deposition equipment. Furthermore, it is realized that ferromagnetic particles such as nickel sputtered and excited by the sputtering plating source are redistributed in concentration in the reaction chamber of the physical vapor deposition equipment under the control of the magnetic field. Furthermore, homogeneous metal thin films with different thicknesses are formed on different area surfaces (different areas) of a single substrate to be coated in the same deposition process. Also, the uniformity and filling performance of the homogeneous metal thin film can be simply and efficiently adjusted by controlling the magnetic field to obtain a metal thin film with high uniformity, thereby achieving the purpose of improving the deposition speed, overall deposition uniformity, deposition efficiency and fineness of the metal thin film, that is, a novel physical vapor deposition equipment for forming metal thin films is proposed.

[0067] It should be noted that in the embodiments of the present invention, the substrate to be coated is the base for subsequently forming the metal thin film, and its material can be silicon, germanium, silicon germanium or silicon carbide, etc., or it can be silicon-on-insulator (SOI) or germanium-on-insulator (GOI), or it can also be other materials, such as III-V compounds such as gallium arsenide, but not limited thereto.

[0068] Moreover, the surface of the substrate to be coated for forming the metal thin film can be divided into one or more regions, and after the sputtering process is performed using the physical vapor deposition equipment provided in the embodiments of the present invention, the thicknesses of the metal thin films respectively formed corresponding to the multiple different regions can be the same or different. Exemplarily, in the embodiments of the present invention, a region obtained after dividing the surface of the substrate to be coated for forming the metal thin film is called a deposition area surface.

[0069] Based on the inventive concept of the present invention, at least one electromagnet can be arranged in the second electrode plate of the present invention, or an electromagnet component including at least one electromagnet can be arranged on the inner wall of the reaction chamber; hereinafter, a physical vapor deposition equipment with at least one electromagnet arranged in the second electrode plate will be described first.

[0070] Refer to Figure 1 , Figure 1The figure is a schematic structural diagram of a physical vapor deposition device provided in an embodiment of the present invention, as Figure 1 shown, the physical vapor deposition device proposed by the present invention at least includes: a reaction chamber 100, and a sputtering component 10 and a carrying component 20 disposed in the reaction chamber 100; wherein,

[0071] The sputtering component 10 can be specifically disposed at the top or upper space of the reaction chamber 100, and, the sputtering component 10 specifically includes a first electrode plate 11, a target 12, and a first control power supply 13 which are stacked, the target 12 is disposed at the bottom of the first electrode plate 11, and the bottom of the target 12 faces the bottom of the reaction chamber 100 and is used to generate a sputtering plating source, the first control power supply 13 is disposed on the top of the first electrode plate 11 and is electrically connected to the first electrode plate 11.

[0072] The carrying component 20 is disposed at the bottom or lower space of the reaction chamber 100 and is located below the target 12, and the carrying component 20 specifically includes: a base 21, a second electrode plate 22, and a second control power supply 23, the base 21 is specifically used to place at least one substrate to be coated for subsequent formation of a metal thin film, the second electrode plate 22 is stacked on the bottom of the base 21 and is parallel to the first electrode plate 11, the second control power supply 23 is stacked on the bottom of the second electrode plate 22 and is electrically connected to the second electrode plate 22.

[0073] Wherein, the material of the target 12 includes ferromagnetic metal elements or compounds such as nickel, and thus a homogeneous metal thin film with adjustable thickness can be formed on different deposition area surfaces of the substrate to be coated based on the target 12.

[0074] It should be noted that it is only necessary that the first control power supply 13 is electrically connected to the first electrode plate 11, and the second control power supply 23 is electrically connected to the second electrode plate 22. It can be the stacked arrangement as described above, or it can be electrically connected through wires. The present invention does not make specific limitations in this regard. Exemplarily, in this embodiment, the first control power supply 13 is stacked at the bottom of the first electrode plate 11, and the second control power supply 23 is stacked at the bottom of the second electrode plate 22 as an example to introduce the physical vapor deposition device provided by the present invention.

[0075] And, the second control power supply 23 can be shown in a manner independent of the second electrode plate 22, as Figure 1 shown, or it can also be shown in a manner integrated in the second electrode plate 22, but not limited thereto.

[0076] In this embodiment, the second electrode plate 22 may specifically include: N electromagnets 221 and M insulating components 222 disposed adjacent to the N electromagnets 221; where N≥1, M = N - 1, and M≥0. That is, when the second electrode plate 22 includes one electromagnet 221, it does not include an insulating component 222, and when the second electrode plate 22 includes N electromagnets 221 such as Figure 1 two or more as shown, the second electrode plate 22 further includes N - 1 insulating components 222.

[0077] Furthermore, the second control power supply 23 may be a control power supply, and it may also be a power supply system including multiple sub-control power supplies. As a preferred example, the second control power supply 23 may specifically include: N second sub-control power supplies 231, and each of the second sub-control power supplies 231 is electrically connected to one of the electromagnets 221.

[0078] Specifically, the insulating component 222 is specifically used to separate adjacent two of the electromagnets 221, so that the separated multiple electromagnets 221 can, under the control of one of the second sub-control power supplies 231 that are respectively and independently electrically connected to them, realize the control of the on-off state and the magnitude of the current of the current passing through each of the electromagnets 221, thereby generating a magnetic field that enables the sputtering plating source to be controllably distributed in different regions within the reaction chamber 100. And through the controllable distribution of the magnetic field in different regions, the concentration distribution of the ferromagnetic particles in the sputtering plating source within the reaction chamber 100 is adjusted, and further the ferromagnetic particles are attracted to be deposited on different surfaces to be deposited of the substrate to be coated, that is, to form homogeneous metal thin films with different thicknesses on different surfaces (different regions) of a single substrate to be coated in the same deposition process. Also, the uniformity and filling performance of the homogeneous metal thin film can be simply and efficiently adjusted by controlling the magnetic field generated by the electromagnet, obtaining a highly uniform thin film, and achieving the purpose of improving the deposition speed, overall deposition uniformity, deposition efficiency and fineness of the metal thin film.

[0079] Exemplarily, the material of the electromagnet 221 may specifically be at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite or silicon steel sheet. The second control power supply 23 (or each of the second sub-control power supplies 231) may specifically be a DC power supply or an AC power supply, and the current of the second control power supply 23 may be a pulsed current, a radio frequency current, or a periodic current.

[0080] Moreover, in the embodiment of the present invention, during the process of generating a controllable magnetic field with different regions by changing the presence or absence and magnitude of the current of the second sub-control power supply 231, it can be achieved by setting different magnitudes of the currents input by multiple second sub-control power supplies 231 in the second control power supply 23 to the electromagnets 221 electrically connected thereto, or by electrically connecting a variable resistor (not shown in the figure) between each second sub-control power supply 231 and the electromagnet 221 electrically connected thereto, and making the currents input by all the second sub-control power supplies 231 in the second control power supply 23 to the corresponding electromagnets 221 the same, and then adjusting the resistance value of the variable resistor to achieve the same function as above, but not limited thereto.

[0081] It can be understood that when the second control power supply 23 is a single control power supply, it can generate a controllable magnetic field with different regions by controlling the energization state (presence or absence) of the second control power supply 23 at different time intervals and the duration of the energization current, or by connecting one or more variable resistors between the second control power supply 23 and the electromagnet 221, and then changing the resistance value of the variable resistor to generate the controllable magnetic field with different regions, but not limited thereto.

[0082] Refer to Figures 2 to 3 , the Figure 2 is a schematic structural diagram of multiple electromagnets 221 and multiple insulating components 222 in the second electrode plate 22 provided in an embodiment of the present invention, and the Figure 3 is another schematic structural diagram of multiple electromagnets 221 and multiple insulating components 222 in the second electrode plate provided in an embodiment of the present invention.

[0083] As Figure 2 and Figure 3 shown, in the embodiment of the present invention, the electromagnets 221 and the insulating components 222 may have the same shape, and the shapes of the electromagnets 221 and the insulating components 222 may specifically be linear, horseshoe-shaped, strip-shaped, arc-shaped or ring-shaped. Exemplarily, when the insulating component 222 is strip-shaped, the shapes of the multiple electromagnets 221 separated by it are strip-shaped as shown in Figure 2 , and when the insulating component 222 is ring-shaped, the shapes of the multiple electromagnets 221 separated by it are ring-shaped as shown in Figure 3 .

[0084] In some other embodiments, at least one electromagnet component independent of the second electrode plate 22 may also be provided in the reaction chamber 100 of the physical vapor deposition device.

[0085] Specifically, the electromagnet component is specifically arranged on one side wall inside the reaction chamber 100, or can also be arranged on both side walls inside the reaction chamber 100, and each electromagnet component can at least include one piece of the electromagnet 221.

[0086] As a preferred example, the electromagnet component can specifically include a first electromagnet component and a second electromagnet component that are parallel to each other and are respectively arranged on the inner side walls of the reaction chamber 100; wherein, the first electromagnet component and the second electromagnet component respectively include: N pieces of electromagnets 221 and M insulating components 222 arranged adjacent to the N pieces of electromagnets 221, where N≥1 and M = N - 1.

[0087] In other examples, the electromagnet component can specifically include a third electromagnet component arranged on one side wall inside the reaction chamber 100, and this third electromagnet component can also specifically include: N pieces of electromagnets 221 and M insulating components 222 arranged adjacent to the N pieces of electromagnets 221, where N≥1 and M = N - 1.

[0088] Moreover, a second control power supply 23 electrically connected to the electromagnet component (such as the first electromagnet component, the second electromagnet component, and the third electromagnet component) is also arranged inside the reaction chamber 100 of the physical vapor deposition device. Specifically, the second control power supply 23 can be a control power supply, and it can also be a power supply system including multiple sub-control power supplies.

[0089] In this embodiment, the second control power supply 23 can specifically include: N second sub-control power supplies 231, and each piece of the electromagnet 221 can be electrically connected to one of the second sub-control power supplies 231 respectively, so as to enable the separated multiple pieces of electromagnets 221 to be controlled by one of the second sub-control power supplies 231 that is independently electrically connected to it, to control the on-off state and the magnitude of the current of each piece of the electromagnet 221, and further generate a magnetic field that enables the sputtering plating source to be controllably distributed in different areas inside the reaction chamber 100, that is, to form homogeneous metal films with different thicknesses on different area surfaces (different areas) of a single substrate to be coated during the same deposition process. It is also possible to simply and efficiently adjust the uniformity and filling performance of the homogeneous metal film by controlling the magnetic field, obtain a film with high uniformity, and further achieve the purpose of improving the deposition speed, deposition uniformity, deposition efficiency, and fineness of the metal film.

[0090] It can be understood that when N = 1, both the first electromagnet component and the second electromagnet component include one piece of electromagnet 221, and when N>1, the number of electromagnets 221 included in the first electromagnet component and the second electromagnet component can be the same or different, and the present invention does not make specific limitations on this.

[0091] Moreover, when the second control power supply 23 is a single control power supply, it can generate a controllable magnetic field with different regions by controlling the energization state (presence or absence) of the second control power supply 23 at different time periods and the duration of the energization current, etc. It can also generate the controllable magnetic field with different regions by connecting one or more variable resistors between the second control power supply 23 and the electromagnet 221, and then changing the resistance value of the variable resistor. However, this is not limited thereto.

[0092] Obviously, the relative positions or electrical connections of the electromagnet, the insulating component, the second control power supply or the second sub-control power supply, the variable resistor, etc. in the electromagnet component provided by the present invention are the same as those in the case where at least one electromagnet is provided in the second electrode plate. Therefore, the present invention will not repeat them here.

[0093] In addition, based on the physical vapor deposition equipment described above, an embodiment of the present invention can also provide a metal thin film deposition process, which may specifically include the following steps:

[0094] Step S1: Provide Figure 1 the physical vapor deposition equipment shown in the figure, and install the substrate to be coated on the base 21 in the reaction chamber 100.

[0095] Step S2: Adjust the reaction chamber 100 to the target pressure and introduce a working gas, such as argon.

[0096] Step S3: Turn on the first control power supply 13 to apply a first current to the target 12, and at the same time turn on the second control power supply 23 to apply a second current to at least the one electromagnet 221, so as to form a metal thin film with a certain thickness on at least the deposition area surface of the substrate to be coated corresponding to the one electromagnet 221.

[0097] In summary, in the physical vapor deposition equipment provided by the present invention, by transforming some components in the physical vapor deposition equipment, such as the second electrode plate, into multiple electromagnets isolated by an insulating component, or by arranging at least one set of electromagnet components composed of multiple electromagnets isolated by an insulating component on the inner side wall of its reaction chamber, and then electrically connecting a control power supply to each of the electromagnets, the unexpected effect is that: the magnitude and presence or absence of the energizing current of the multiple electromagnets can be separately controlled through the control power supplies respectively connected to the different electromagnets, so that the multiple electromagnets generate a magnetic field with controllable distribution in different regions, and also enable ferromagnetic particles such as nickel sputtered and excited by the sputtering plating source to be redistributed in concentration in the reaction chamber of the physical vapor deposition equipment under the control of the magnetic field. Furthermore, homogeneous metal films with different thicknesses can be formed on different regional surfaces (different regions) of a single substrate to be coated in the same deposition process. Also, the uniformity and filling performance of the homogeneous metal film can be simply and efficiently adjusted by controlling the magnetic field, obtaining a metal film with high uniformity, thereby achieving the purpose of improving the deposition speed, overall deposition uniformity, deposition efficiency, and fineness of the metal film.

[0098] Furthermore, due to the magnetic field with controllable distribution in different regions generated by the multiple electromagnets, ferromagnetic particles such as nickel sputtered and excited can be directly attracted and controlled, thus eliminating the need for ionization treatment, that is, omitting the ionization component, simplifying the physical vapor deposition equipment, reducing costs, and improving equipment performance.

[0099] It should be noted that although the present invention has been disclosed above with preferred embodiments, the above embodiments are not intended to limit the present invention. For any person skilled in the art, without departing from the scope of the technical solution of the present invention, many possible variations and modifications can be made to the technical solution of the present invention by using the technical content disclosed above, or modified into equivalent embodiments with equivalent changes. Therefore, any simple modification, equivalent change, and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention still fall within the scope of protection of the technical solution of the present invention.

[0100] It should also be understood that unless otherwise specified or indicated, the terms "first", "second", "third", etc. in the specification are only used to distinguish each component, element, step, etc. in the specification, rather than to represent the logical relationship or sequential relationship between each component, element, step, etc.

[0101] It should also be recognized that the terminology described herein is only used to describe specific embodiments and is not intended to limit the scope of the present invention. It must be noted that the singular forms "a" and "an" used herein and in the appended claims include plural referents unless the context clearly dictates otherwise. For example, a reference to "a step" or "a device" means a reference to one or more steps or devices and may include sub-steps and sub-devices. All conjunctions used should be understood in their broadest sense. Also, the word "or" should be understood to have the definition of a logical "or" rather than a logical "exclusive or" unless the context clearly dictates otherwise. In addition, the implementation of the methods and / or devices in the embodiments of the present invention may include performing the selected tasks manually, automatically, or in combination.

Claims

1. A physical vapor deposition device, characterized in that, Comprising: A reaction chamber; A sputtering component, disposed at the top of the reaction chamber, including a first electrode plate and a target disposed at the bottom of the first electrode plate, the bottom of the target facing the bottom of the reaction chamber and configured to generate a sputtering plating source; A carrying component, disposed at the bottom of the reaction chamber and below the target, and the carrying component includes: A base for placing at least one substrate to be coated; A second electrode plate, stacked at the bottom of the base and parallel to the first electrode plate, and the second electrode plate includes: N electromagnets and M insulating components disposed adjacent to the N electromagnets, for generating a controllable magnetic field for the heterogeneous distribution of the sputtering plating source in the reaction chamber by controlling the on / off state and the energizing current of the electromagnets, where N≥1 and M = N - 1.

2. The physical vapor deposition device according to claim 1, characterized in that, The material of the target includes ferromagnetic metallic elements or compounds of nickel.

3. The physical vapor deposition device according to claim 1, characterized in that, The material of the electromagnet includes at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite, or silicon steel sheet.

4. The physical vapor deposition device according to claim 1, characterized in that, The sputtering component further includes: a first control power supply, disposed at the top of the first electrode plate and electrically connected to the first electrode plate.

5. The physical vapor deposition device according to claim 1, characterized in that, The carrying component further includes: a second control power supply, electrically connected to the second electrode plate for controlling the electromagnets.

6. The physical vapor deposition device according to claim 5, characterized in that, The second control power supply includes: A plurality of second sub-control power supplies, each second sub-control power supply being electrically connected to one of the electromagnets respectively, for inputting an energizing current to each electromagnet respectively, and adjusting the concentration distribution of ferromagnetic particles in the sputtering plating source in the reaction chamber by controlling the magnitude of the energizing current, and further attracting the ferromagnetic particles to deposit on the surface of the area to be deposited of the substrate to be coated.

7. The physical vapor deposition device according to claim 5, characterized in that, The carrying component further includes: At least one variable resistor, disposed between the electromagnet and the second control power supply, for controlling the on / off state and the magnitude of the energizing current of the electromagnet by controlling the resistance value of the variable resistor.

8. The physical vapor deposition device according to claim 6, characterized in that, The second control power supply is a DC power supply or an AC power supply, and the current of the second control power supply includes pulsed current, RF current, or periodic current.

9. A physical vapor deposition device, characterized in that, Comprising: A reaction chamber; A sputtering component, disposed at the top of the reaction chamber, including a first electrode plate and a target disposed at the bottom of the first electrode plate, the bottom of the target facing the bottom of the reaction chamber and configured to generate a sputtering plating source; A carrying component, disposed at the bottom of the reaction chamber and below the target, and the carrying component includes: A base for placing at least one substrate to be coated; And At least one electromagnet component, disposed on the inner sidewall of the reaction chamber, and including N electromagnets and M insulating components disposed adjacent to the N electromagnets, for generating a controllable magnetic field for the heterogeneous distribution of the sputtering plating source in the reaction chamber by controlling the on / off state and the energizing current of the electromagnets, where N≥1 and M = N - 1.

10. The physical vapor deposition device according to claim 9, characterized in that, The physical vapor deposition device includes: A first electromagnet component, disposed on one sidewall inside the reaction chamber; and The second electromagnet component is arranged on another side wall in the reaction chamber and is parallel and opposite to the first electromagnet component; Wherein, both the first electromagnet component and the second electromagnet component include N electromagnets and M insulating components arranged adjacent to the N electromagnets, so as to generate a magnetic field that can control the distribution of the sputtering plating source in different areas in the reaction chamber by controlling the on-off state and the energizing current of the electromagnets, where N≥1 and M = N - 1.

11. The physical vapor deposition device according to claim 9, characterized in that, The material of the target includes ferromagnetic metal elements or compounds containing nickel.

12. The physical vapor deposition device according to claim 9, characterized in that,The material of the electromagnet includes at least one of iron, iron-nickel alloy, low-carbon steel, soft magnetic ferrite, or silicon steel sheet.

13. The physical vapor deposition apparatus according to claim 9 or 10, characterized in that, The sputtering component further includes: a first control power supply, arranged on the top of the first electrode plate and electrically connected to the first electrode plate.

14. The physical vapor deposition apparatus according to claim 9 or 10, characterized in that, The carrier component further includes: a second control power supply, electrically connected to the electromagnet component for controlling the electromagnets.

15. The physical vapor deposition apparatus according to claim 14, characterized in that, The second control power supply includes: A plurality of second sub-control power supplies, each of the second sub-control power supplies is respectively electrically connected to an electromagnet, so as to respectively input an energizing current to each electromagnet, and adjust the concentration distribution of ferromagnetic particles in the sputtering plating source in the reaction chamber by controlling the magnitude of the energizing current, and further attract the ferromagnetic particles to deposit on the surface of the area to be deposited of the substrate to be coated.

16. The physical vapor deposition apparatus according to claim 14, characterized in that, The physical vapor deposition equipment further includes: At least one variable resistor, arranged between the electromagnet and the second control power supply, so as to control the on-off state and the magnitude of the energizing current of the electromagnet by controlling the resistance value of the variable resistor.

17. The physical vapor deposition apparatus according to claim 14, characterized in that, The second control power supply is a DC power supply or an AC power supply, and the current of the second control power supply includes pulsed current, radio frequency current, or periodic current.

Images