Wafer bearing device and wafer horizontal arrangement detection method

Abstract

The invention discloses a wafer bearing device and a wafer horizontal arrangement detection method, the wafer bearing device is arranged at the edge of a wafer and comprises at least three groups of wafer adjusting mechanisms, and the at least three groups of wafer adjusting mechanisms are sequentially arranged at intervals along the edge of the wafer; each group of wafer adjusting mechanism comprises a bearing part for bearing a wafer and arranged on a horizontal plane and a driving assembly for driving the bearing part to move, at least part of the surface of one side of the bearing part for bearing the wafer is provided with a slope section, and the edge of the wafer is carried on the slope section; the driving assembly is used for driving the bearing piece to move to change the inclination angle of the slope section of the bearing piece relative to the wafer. The design of the wafer bearing device can provide higher manufacturing precision and stability, and is helpful for meeting the process requirements of some high-requirement semiconductor manufacturing and other fields.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and particularly to a wafer carrier device and a method for detecting the horizontal setting of a wafer. Background Art

[0002] In the field of semiconductors, the processing of semiconductors involves a variety of process equipment. Almost all processes require obtaining the accurate position state of the wafer in advance, and then the wafer is carried up and down by a manipulator. Moreover, when the equipment is working, it is required that the wafer be placed horizontally with a certain accuracy. Otherwise, it is very easy to break the wafer when the manipulator carries the wafer up and down, causing losses.

[0003] It is known that in the prior art, a fixed vision camera is usually used to observe the placement of the wafer. However, the known fixed camera can only detect the placement of the wafer in one direction. Therefore, the detection result of the fixed camera may have an error from the actual situation. And this detection method has high accuracy requirements for the vision camera. When the wafer is slightly tilted, the accuracy of the vision camera may not meet the production accuracy requirements.

[0004] Therefore, the above-mentioned problem of wafer placement needs to be solved urgently. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to overcome the defects in the prior art and provide a wafer carrier device and a method for detecting the horizontal setting of a wafer.

[0006] The present invention solves the above technical problem through the following technical solutions:

[0007] A wafer carrier device is provided at the edge of the wafer and includes at least three groups of wafer adjustment mechanisms, and at least three groups of the wafer adjustment mechanisms are arranged at intervals along the edge of the wafer in sequence;

[0008] Each group of the wafer adjustment mechanisms includes a carrier for carrying the wafer and arranged on a horizontal plane and a driving component for driving the carrier to move. And at least part of one side surface of the carrier for carrying the wafer has a ramp section, and the edge of the wafer is mounted on the ramp section. The driving component is used to drive the carrier to move so as to change the inclination angle of the ramp section of the carrier relative to the wafer.

[0009] In this technical solution, at least three sets of adjustment mechanisms arranged at intervals enhance the stability of the wafer placed on the wafer carrier device. At the same time, it also helps to achieve uniform adjustment of the wafer. Meanwhile, according to the actual position and inclination of the wafer, by controlling the driving effect of the driving component relative to the carrier, the inclination angle of the ramp section of the carrier relative to the wafer is changed, so as to provide precise adjustment for the position or direction of the wafer, which is very important for applications with high uniformity requirements in some precision processing processes in the field of semiconductor manufacturing and other fields.

[0010] Generally speaking, the design of this wafer carrier device can provide higher manufacturing precision and stability, and helps to meet the process requirements of some high - demand semiconductor manufacturing and other fields.

[0011] Preferably, the driving component includes: a top rod and a lead screw device. Wherein, one end of the top rod abuts against the carrier, and the other end of the top rod is connected to the nut of the lead screw device. The motor drive of the lead screw device makes the screw of the lead screw device rotate to drive the top rod to move along the extension direction of the screw through the nut thread - connected to the screw, so as to change the inclination angle of the ramp section of the carrier relative to the wafer.

[0012] In this technical solution, through the transmission method of driving the top rod by the lead screw device, dynamic adjustment can be carried out according to the actual situation of the wafer to achieve precise control of the position and inclination degree of the top rod, thereby precisely adjusting the ramp section of the carrier, and then changing the inclination angle of the wafer, improving the flexibility and applicability of the use of the wafer carrier device.

[0013] A detection method for horizontal setting of a wafer, used to detect whether the placement of the wafer meets the process requirements. The detection method for horizontal setting of the wafer adopts the wafer carrier device described in any one of the above, and the detection method for horizontal setting of the wafer includes the following steps:

[0014] S1. Place a simulation measuring tool with the same cross - sectional size as the wafer on the wafer carrier device;

[0015] S2. Place a measuring tool provided with a light - passing hole on the surface of the simulation measuring tool, and set a receiving screen on one side of the measuring tool;

[0016] S3. On the side of the measuring tool away from the receiving screen, use a laser emitting device to emit laser light towards the light - passing hole of the measuring tool;

[0017] When the light spot of the laser passing through the light - passing hole appears within the preset area of the receiving screen, the simulation measuring tool is in the horizontal target state, and then place the wafer on the wafer carrier device;

[0018] When the light spot of the laser passing through the light-transmitting hole is not presented within the preset area of the receiving screen, the simulation measuring tool is in a skewed state. Then, the driving component in the wafer carrying device is used to adjust the inclination angle of the carrier relative to the simulation measuring tool to change the skewed state of the simulation measuring tool, and step S3 is repeated until the simulation measuring tool is in the horizontal target state;

[0019] S4. After the simulation measuring tool is in the horizontal target state, take out the simulation measuring tool and place the wafer on the wafer carrying device.

[0020] In this technical solution, by placing a simulation measuring tool similar to the cross-sectional size of the wafer on the wafer carrying device, and using a measuring tool, a laser emitting device, and a receiving screen, accurate detection of the horizontal setting of the simulation measuring tool can be achieved. By adjusting the wafer carrying device before placing the wafer to ensure that the simulation measuring tool is in the horizontal target state, it further ensures that the wafer can meet the process requirements when placed on the wafer carrying device, which helps to improve the accuracy and precision of wafer placement. In addition, in this technical solution, the purpose of first adjusting the simulation measuring tool horizontally instead of directly using the wafer is that, considering that the direct contact of the measuring tool with the wafer may damage the surface of the wafer, using the simulation measuring tool first can eliminate all possibilities of damaging the wafer.

[0021] Preferably, two non-coincident but partially intersecting light-transmitting holes are provided on the measuring tool, and the laser passes through the partially intersecting area.

[0022] In this technical solution, by setting two non-coincident but partially intersecting light-transmitting holes, the position of the light-transmitting hole for the laser to pass through can be accurately determined using the principle of "three points determine a plane", meeting the requirements for detecting the horizontal setting of the simulation measuring tool, avoiding problems such as the light-transmitting hole tilting or skewing relative to the receiving screen, and enhancing the accuracy and reliability of the detection.

[0023] Preferably, after step S4, it further includes a step of performing a second detection on the placement state of the wafer, specifically including the following steps:

[0024] A laser emission receiver capable of emitting laser vertically towards the center of the wafer is provided directly below the center of the wafer, and a control system electrically connected to the laser emission receiver. The control system detects whether the wafer is in the horizontal target state by judging whether the laser emission receiver can receive the reflected laser emitted by itself and the distance of the laser received from the reflection of the wafer;

[0025] When the control system detects that the laser emission receiver can receive the reflected laser and detects that the distance from the emission to the reception of the laser satisfies the preset range, it indicates that the wafer is in the horizontal target state;

[0026] When the control system detects that the laser emission receiver cannot receive the reflected laser, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that the laser emission receiver can receive the reflected laser and the distance from the laser emission to reception meets the preset range.

[0027] In this technical solution, by arranging a laser emission receiver directly below the center of the wafer, the control system can determine whether the position of the wafer is in a horizontal target state based on whether the laser emission receiver can receive the reflected laser it emits, and the distance, i.e., the wavelength, of the laser emitted and reflected back by the laser emission receiver. This detection method not only realizes the reliable detection of the horizontal state of the wafer, but also improves the detection accuracy and ensures that the placement of the wafer meets the process requirements in the manufacturing process.

[0028] Preferably, after step S4, it further includes a step of performing a second detection on the placement state of the wafer, specifically including the following steps:

[0029] Two laser emission receivers are provided outside the edge of the wafer and a control system electrically connected to each laser emission receiver. The two laser emission receivers are symmetrically arranged on both sides of the center of the wafer and are located on the same horizontal plane and have a height difference in the horizontal direction relative to the wafer, so as to be able to emit laser towards the center of the wafer. The control system detects whether the wafer is in a horizontal target state by judging whether each laser emission receiver can receive the reflected laser emitted by the other laser emission receiver and the distance of the reflected laser received by each laser emission receiver from the other laser emission receiver.

[0030] When the control system detects that each laser emission receiver can receive the reflected laser emitted by the other laser emission receiver and the distances of the reflected lasers received by the two laser emission receivers from the other laser emission receiver both meet the preset distance range, it indicates that the wafer is in a horizontal target state.

[0031] When the control system detects that any one of the laser emission receivers cannot receive the reflected laser emitted by the other laser emission receiver, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that each laser emission receiver can receive the reflected laser emitted by the other laser emission receiver and the distances of the reflected lasers received by the two laser emission receivers from the other laser emission receiver both meet the preset distance range.

[0032] In this technical solution, by arranging two symmetric laser emission receivers outside the edge of the wafer, the control system can perform symmetry detection on the horizontal state of the wafer. Specifically, the control system detects whether the wafer is in the horizontal target state by determining whether both laser emission receivers can receive the reflected laser emitted by the other to the center of the wafer, and by judging the distance (i.e., wavelength) of the reflected laser received by the two laser emission receivers. This detection method not only realizes reliable detection of the horizontal state of the wafer, but also improves the detection accuracy and ensures that the placement of the wafer meets the process requirements in the manufacturing process.

[0033] Preferably, after step S4, it further includes the step of performing a second detection on the placement state of the wafer, specifically including the following steps:

[0034] There are two laser emission receivers arranged outside the edge of the wafer and a control system electrically connected to each of the laser emission receivers. The two laser emission receivers are symmetrically arranged on both sides of the center of the wafer and at the same horizontal height as the wafer, so as to be able to emit laser towards the edge contour of the wafer. The control system detects whether the wafer is in the horizontal target state by determining whether both of the laser emission receivers can receive the reflected laser emitted by themselves, and the distance of the reflected laser received by the two laser emission receivers from the laser they emitted themselves.

[0035] When the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances of the reflected laser received by the two laser emission receivers from the laser they emitted themselves both meet within the preset distance range, it indicates that the wafer is in the horizontal target state.

[0036] When the control system detects that any one of the laser emission receivers cannot receive the reflected laser emitted by itself, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances of the reflected laser received by the two laser emission receivers from the laser they emitted themselves both meet within the preset distance range.

[0037] In this technical solution, by setting two symmetric laser emission receivers outside the edge of the wafer, the control system can perform symmetry detection on the horizontal state of the wafer. Specifically, the control system detects whether the wafer is in the horizontal target state by judging whether both laser emission receivers can receive the reflected laser emitted by themselves to the contour of the wafer, and the distance (i.e., wavelength) of the reflected laser received by both laser emission receivers from the laser they emitted. This detection method not only realizes reliable detection of the horizontal state of the wafer, but also improves the detection accuracy and ensures that the placement of the wafer meets the process requirements in the manufacturing process.

[0038] Preferably, after step S4, it further includes the step of performing a second detection on the placement state of the wafer, specifically including the following steps:

[0039] At least three laser emission receivers are arranged above the surface of the wafer and a control system electrically connected to each of the laser emission receivers. Each of the laser emission receivers is arranged on the same horizontal plane and is arranged at intervals in sequence to be able to emit laser towards the surface of the wafer. The control system detects whether the wafer is in the horizontal target state by judging whether each of the laser emission receivers can receive the reflected laser emitted by itself, and the distance of the reflected laser received by each of the laser emission receivers from the laser it emitted.

[0040] When the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances of the reflected lasers received by each laser emission receiver from the lasers they emitted all meet the preset distance range, it indicates that the wafer is in the horizontal target state.

[0041] When the control system detects that any one of the laser emission receivers cannot receive the reflected laser emitted by itself, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances of the reflected lasers received by each laser emission receiver from the lasers they emitted all meet the preset distance range.

[0042] In this technical solution, at least three laser emission receivers are arranged in sequence at intervals on the same horizontal plane above the wafer surface. The control system uses the principle of "three points determine a plane" to realize multi-point detection of the wafer position, which helps to more comprehensively understand the overall horizontal state of the wafer. Specifically, the control system detects whether the wafer is in the horizontal target state by judging whether each laser emission receiver can receive the reflected laser emitted by itself to the wafer surface, and the distance (i.e., wavelength) of each laser emission receiver receiving the reflected laser emitted by itself to the wafer surface. This detection method not only realizes reliable detection of the wafer horizontal state, but also improves the detection accuracy and ensures that the placement of the wafer meets the process requirements in the manufacturing process.

[0043] Preferably, after step S4, it further includes the step of performing a second detection on the placement state of the wafer, specifically including the following steps:

[0044] At least two pairs of laser emission receivers that are symmetrically arranged on both sides of the wafer center and are located above the wafer surface at the outer edge of the wafer, and a control system electrically connected to each of the laser emission receivers are provided. Each group of the laser emission receivers is arranged in sequence at intervals on the same horizontal plane. The two laser emission receivers in each group emit laser to each other. The control system detects whether the wafer is in the horizontal target state by judging whether the two laser emission receivers in each group can receive the laser emitted by another correspondingly arranged laser emission receiver.

[0045] When the control system detects that any one of the laser emission receivers can receive the laser emitted by another correspondingly arranged laser emission receiver, it indicates that the wafer is in the horizontal target state.

[0046] When the control system detects that any one of the laser emission receivers cannot receive the laser emitted by another correspondingly arranged laser emission receiver, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the laser emitted by another correspondingly arranged laser emission receiver.

[0047] In this technical solution, by arranging at least two pairs of laser emission receivers on the outer edge of the wafer and above the wafer surface, symmetrically arranged on both sides of the wafer center, the control system can achieve symmetry detection. Specifically, the control system detects whether the wafer is in a horizontal target state by determining whether both laser emission receivers in each group can receive the laser emitted by the other laser emission receiver. Moreover, by using at least two groups of laser emission receivers, the reliability of detection is improved. This detection method not only realizes reliable detection of the horizontal state of the wafer, but also improves the detection accuracy, ensuring that the placement of the wafer meets the process requirements in the manufacturing process.

[0048] Preferably, when the wafer is in a skewed state and needs to be adjusted again, the following adjustment steps are included:

[0049] An alarm prompt is provided in the control system, and a wafer clamp is also provided at the edge of the wafer to clamp the wafer;

[0050] When the control system detects that the wafer is in a skewed state, it will trigger the prompt function of the alarm prompt. At this time, adjust the wafer clamp to change the state of the wafer until the alarm prompt no longer gives a prompt, and then repeat the above steps of detecting the placement state of the wafer again until it is detected that the wafer is in a horizontal target state.

[0051] In this technical solution, the control system with an alarm prompt can detect in real time whether the wafer is in a skewed state. Once it detects that the wafer is in a skewed state, the control system will trigger the alarm prompt to provide timely visual or audible prompts, enabling the operator to quickly notice the problem. When the alarm prompt gives an alarm, the operator can change the placement state of the wafer by adjusting the wafer clamp, such as by changing the clamping force and the position of the clamping point of the wafer clamp. After adjusting the wafer clamp so that the alarm prompt no longer gives a prompt function, it is still necessary to detect the placement state of the wafer again. The purpose of this process is to ensure that the wafer gradually approaches the horizontal target state during the adjustment process. Through repeated adjustments and detections, the placement state of the wafer can be gradually optimized until it is detected that the wafer is in a horizontal target state.

[0052] The positive and progressive effects of the present invention are as follows:

[0053] 1. The wafer carrier device enhances the stability of the wafer placed on the wafer carrier device through at least three sets of adjustment mechanisms arranged at intervals, and also helps to achieve uniform adjustment of the wafer. At the same time, according to the actual position and inclination of the wafer, by controlling the driving action of the driving component relative to the carrier, the inclination angle of the ramp section of the carrier relative to the wafer is changed, so as to provide precise adjustment for the position or direction of the wafer, which is very important for applications with high uniformity requirements in some precision processing processes in the field of semiconductor manufacturing and other fields. Generally speaking, the design of this wafer carrier device can provide higher manufacturing accuracy and stability, and helps to meet the process requirements of some high-demand semiconductor manufacturing and other fields.

[0054] 2. The detection method for the horizontal setting of the wafer can achieve precise detection of the horizontal setting of the simulation measuring tool by placing a simulation measuring tool similar in cross-sectional size to the wafer on the wafer carrier device and using a measuring tool, a laser emitting device, and a receiving screen. By adjusting the wafer carrier device before placing the wafer to ensure that the simulation measuring tool is in the horizontal target state, it further ensures that the wafer can meet the process requirements when placed on the wafer carrier device, and helps to improve the accuracy and precision of wafer placement. In addition, in this technical solution, the purpose of first adjusting the simulation measuring tool instead of directly using the wafer is that, considering that the direct contact of the measuring tool with the wafer will damage the surface of the wafer, using the simulation measuring tool first can eliminate all possibilities of damaging the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Figure 1 Partial structural schematic diagram of the wafer carrier device according to Embodiment 1 of the present invention.

[0056] Figure 2 Schematic diagram of the detection state of the horizontal setting of the wafer from the first perspective according to Embodiment 2 of the present invention.

[0057] Figure 3 Schematic diagram of the detection state of the horizontal setting of the wafer from the second perspective according to Embodiment 2 of the present invention.

[0058] Figure 4 Flow chart of the detection method for the horizontal setting of the wafer according to Embodiment 2 of the present invention.

[0059] Figure 5a Schematic diagram of the structure of the wafer in the horizontal target state according to Embodiment 3 of the present invention.

[0060] Figure 5b For Figure 5a Enlarged view of part A in

[0061] Figure 5c Schematic diagram of the structure of the wafer in the skewed state according to Embodiment 3 of the present invention.

[0062] Figure 5d is Figure 5c an enlarged view of part B in

[0063] Figure 6a It is a schematic structural view of the wafer in the horizontal target state of Embodiment 4 of the present invention.

[0064] Figure 6b It is a side view of the wafer in the horizontal target state of Embodiment 4 of the present invention.

[0065] Figure 6c It is a schematic structural view of the wafer in the skewed state of Embodiment 4 of the present invention.

[0066] Figure 6d It is a side view of the wafer in the skewed state of Embodiment 4 of the present invention.

[0067] Figure 7a It is a schematic structural view of the wafer in the horizontal target state of Embodiment 5 of the present invention.

[0068] Figure 7b It is a side view of the wafer in the horizontal target state of Embodiment 5 of the present invention.

[0069] Figure 7c It is a schematic structural view of the wafer in the skewed state of Embodiment 5 of the present invention.

[0070] Figure 7d It is a top view of the wafer in the skewed state of Embodiment 5 of the present invention.

[0071] Figure 8a It is a schematic structural view of the wafer in the horizontal target state of Embodiment 6 of the present invention.

[0072] Figure 8b It is a schematic structural view of the wafer in the skewed state of Embodiment 6 of the present invention.

[0073] Figure 9a It is a schematic structural view of the wafer in the horizontal target state of Embodiment 7 of the present invention.

[0074] Figure 9b is Figure 9a an enlarged view of part C in

[0075] Figure 9c It is a schematic structural view of the wafer in the skewed state of Embodiment 7 of the present invention. Figure 9d is Figure 9c an enlarged view of part D in

[0076] Explanation of reference numerals:

[0077] Wafer carrier device 100

[0078] Horizontal plane 11

[0079] Wafer 12

[0080] Wafer adjustment mechanism 200

[0081] Carrier 21

[0082] Ramp section 211

[0083] Drive assembly 22

[0084] Ejector rod 221

[0085] Screw device 222

[0086] Nut 2221

[0087] Screw 2222

[0088] Motor 2223

[0089] Analog measuring tool 300

[0090] Measuring tool 400

[0091] Light-transmitting hole 41

[0092] Receiving screen 500

[0093] Preset area 51

[0094] Laser emitting device 600

[0095] Laser 61

[0096] Laser emission and reception device 700 Detailed implementation manners

[0097] The present invention will be further described below by way of embodiments, but the present invention is not limited to the scope of the embodiments thereby.

[0098]

Embodiment 1

[0099] As Figure 1 shown, Embodiment 1 discloses a wafer 12 carrying device 100.

[0100] The wafer 12 carrying device 100 is disposed at the edge of the wafer 12 and includes at least three groups of wafer adjustment mechanisms 200. In this embodiment, the wafer 12 carrying device 100 includes three groups of wafer adjustment mechanisms 200, and the three groups of wafer adjustment mechanisms 200 are arranged at intervals in sequence along the edge of the wafer 12 for supporting and carrying the wafer 12.

[0101] Among them, each group of wafer adjustment mechanisms 200 includes a carrier 21 for carrying the wafer 12 and arranged on the horizontal plane 11, and a driving component 22 connected to the carrier 21 for driving the carrier 21 to move. At least part of one side surface of the carrier 21 for carrying the wafer 12 has a ramp section 211, that is, a ramp section 211 is provided on the side surface of the carrier 21 away from the ground, and the edge of the wafer 12 is mounted on the ramp section 211 of the carrier 21.

[0102] The driving component 22 drives the carrier 21 to move, so that the carrier 21 flips to change the inclination angle of the ramp section 211 of the carrier 21 relative to the wafer 12, thereby changing the inclination state of the wafer 12 arranged on the ramp section 211.

[0103] In this embodiment, at least three groups of adjustment mechanisms arranged at intervals enhance the stability of the wafer 12 placed on the wafer 12 carrying device 100, and also help to achieve uniform adjustment of the wafer 12. At the same time, according to the actual position and inclination of the wafer 12, by controlling the driving action of the driving component 22 relative to the carrier 21, the inclination angle of the ramp section 211 of the carrier 21 relative to the wafer 12 is changed, so as to provide precise adjustment for the position or direction of the wafer 12, which is very important for applications with high uniformity requirements in some precision processing processes in the fields of semiconductor manufacturing and the like.

[0104] Generally speaking, the design of this kind of wafer 12 carrying device 100 can provide higher manufacturing precision and stability, and helps to meet the process requirements of some high-demand semiconductor manufacturing and other fields.

[0105] Preferably, the driving component 22 specifically includes a ejector rod 221 and a lead screw device 222. The lead screw device 222 further includes a motor 2223, a screw 2222 connected to the output shaft of the motor 2223, and a nut 2221 threadedly connected to the screw 2222.

[0106] Among them, one end of the ejector rod 221 abuts against the carrier 21, that is, the ejector rod 221 is arranged on the side surface of the carrier 21 facing away from the wafer 12, and the other end of the ejector rod 221 is connected to the nut 2221 of the lead screw device 222. Then the working mechanism of the driving component 22 is specifically as follows: a motor 2223 is equipped on the lead screw device 222. Through the drive of the motor 2223, the screw 2222 will rotate, and the nut 2221 threadedly connected to the screw 2222 will also move accordingly, thereby driving the ejector rod 221 connected to the nut 2221 to move, that is, the movement is transmitted to the ejector rod 221 through the helical movement of the lead screw, so that the ejector rod 221 is mechanically coupled with the lead screw device 222 to realize the adjustment of the inclination angle of the carrier 21 relative to the wafer 12 by the ejector rod 221.

[0107] Preferably, an electrical contact connection method is adopted between the ejector rod 221 and the carrier 21. Moreover, in order to ensure that the inclination angles of the carriers 21 are the same when the wafer adjusting mechanism 200 holds the wafer 12, the motor 2223 in the driving lead screw device 222 can be used to drive the rotation of the screw rod 2222, and the adjusting nut 2221 drives the ejector rod 221 to move to control the extending length direction of the ejector rod 221 relative to the carrier 21 to ensure that the wafer 12 is in a "relatively" horizontal target state.

[0108] In this embodiment, through the transmission method of driving the ejector rod 221 by the lead screw device 222, dynamic adjustment can be performed according to the actual situation of the wafer 12 to achieve precise control of the position and inclination degree of the ejector rod 221, thereby precisely adjusting the ramp section 211 of the carrier 21, and then changing the inclination angle of the wafer 12, improving the flexibility and applicability of the wafer 12 holding device 100.

[0109] In other embodiments, the driving component 22 may adopt existing technologies of other structural forms, as long as it satisfies that the driving component 22 can change the setting state of the carrier 21 to change the inclination angle of the wafer 12 carried on the carrier 21, all belong to the protection scope of this application.

[0110]

Embodiment 2

[0111] As Figures 2 - 4 shown, Embodiment 2 discloses a detection method for horizontally setting the wafer 12, which is used to detect whether the placement of the wafer 12 meets the process requirements. The detection method for horizontally setting the wafer 12 adopts the wafer 12 holding device 100 of Embodiment 1, and the detection method for placing the wafer 12 includes the following steps:

[0112] S1. Place the simulation measuring tool 300 with the same cross-sectional size as the wafer 12 on the wafer 12 holding device 100;

[0113] S2. Place a measuring tool 400 provided with a light-transmitting hole 41 on the surface of the simulation measuring tool 300, and set a receiving screen 500 on one side of the measuring tool 400;

[0114] S3. On the side of the measuring tool 400 away from the receiving screen 500, use a laser 61 emitting device 600 to emit laser 61 towards the light-transmitting hole 41 of the measuring tool 400;

[0115] When the light spot of the laser 61 passing through the light-transmitting hole 41 appears within the preset area 51 of the receiving screen 500, the simulation measuring tool 300 is in the horizontal target state, and then place the wafer 12 on the wafer 12 holding device 100;

[0116] When the spot of the laser 61 passing through the light-transmitting hole 41 does not appear within the preset area 51 of the receiving screen 500, the simulation measuring tool 300 is in a skewed state. Then, the driving assembly 22 in the wafer 12 carrying device 100 is used to adjust the inclination angle of the carrier 21 relative to the simulation measuring tool 300 to change the skewed state of the simulation measuring tool 300, and step S3 is repeated until the simulation measuring tool 300 is in the horizontal target state;

[0117] S4. After the simulation measuring tool 300 is in the horizontal target state, take out the simulation measuring tool 300 and place the wafer 12 on the wafer 12 carrying device 100.

[0118] Among them, before step S1, a marble platform is used for calibration. The plane of the marble has been adjusted to the horizontal plane 11 through a level and floor feet supports. That is to say, before the detection step starts, first use a marble platform that meets the composite level requirements as the horizontal plane 11 for placing the wafer 12 carrying device 100 to ensure the reliability of the subsequent horizontal state detection of the simulation measuring tool 300.

[0119] Moreover, after the wafer 12 carrying device 100 is placed on the marble platform, first fix the positions of the three independent wafer adjustment mechanisms 200 so that the axes, i.e., the extending directions, of the three ejector rods 221 are located on the same horizontal plane 11 and intersect at the same point. It can be ensured that the set positions of the three ejector rods 221 meet the required requirements by installing a laser 61 head at the end of the ejector rod 221 to emit the laser 61, and the included angle between the respective light rays is 120°.

[0120] In this embodiment, by placing a simulation measuring tool 300 with a cross-sectional size similar to that of the wafer 12 on the wafer 12 carrying device 100 and using a measuring tool 400, a laser 61 emitting device 600, and a receiving screen 500, accurate detection of the horizontal setting of the simulation measuring tool 300 can be achieved. By adjusting the wafer 12 carrying device 100 before placing the wafer 12 to ensure that the simulation measuring tool 300 is in the horizontal target state, it is further ensured that the wafer 12 can meet the process requirements when placed on the wafer 12 carrying device 100, which helps to improve the accuracy and precision of the wafer 12 placement.

[0121] In addition, in this technical solution, the purpose of first adjusting the simulation measuring tool 300 horizontally instead of directly using the wafer 12 is that, considering that the direct contact of the measuring tool 400 with the wafer 12 may damage the surface of the wafer 12, using the plastic simulation measuring tool 300 first can eliminate all possibilities of damaging the wafer 12.

[0122] Finally, in this embodiment, the requirement for the non-uniformity of the inclined surface inclination angle of the wafer 12 is controlled to be less than 1 minute of angle (one degree of angle is equal to 60 minutes of angle), which meets the requirement for the horizontal placement of the wafer 12 in the first rough measurement.

[0123]

Embodiment 3

[0124] As Figures 5a - 5d shown, Embodiment 3 discloses a method for detecting the horizontal setting of the wafer 12.

[0125] The method for detecting the horizontal setting of the wafer 12 is after step S5 of Embodiment 2, that is: after the simulation measuring tool 300 is taken out when it is in the horizontal target state, and after the wafer 12 is placed on the wafer 12 carrying device 100, it further includes a step of performing a second detection on the placement state of the wafer 12, specifically including the following steps:

[0126] A laser transmitter-receiver 700 capable of emitting a laser 61 towards the center of the wafer 12 in the vertical direction and a control system electrically connected to the laser transmitter-receiver 700 are provided directly below the center of the wafer 12.

[0127] When starting the detection, the laser transmitter-receiver 700 emits the laser 61 towards the center of the wafer 12, and the control system detects whether the wafer 12 is in the horizontal target state by judging whether the laser transmitter-receiver 700 can receive the reflected laser 61 emitted by itself to the wafer 12 and the distance of the laser 61 received by the laser transmitter-receiver 700 reflected from the wafer 12.

[0128] Specifically, when the wafer 12 is in the horizontal target state, the laser transmitter-receiver 700 emits the laser 61 to the center of the wafer 12 and can receive the laser 61 reflected from the center of the wafer 12. At the same time, the sum of the distance of the laser 61 emitted from the laser transmitter-receiver 700 to the surface of the wafer 12 and the distance of the laser 61 reflected from the surface of the wafer 12 to the laser transmitter-receiver 700 satisfies within the range preset by the control system. The preset range needs to be set by the staff according to the specific structure and process requirements of the wafer 12. And, in this embodiment, it is to judge the placement state of the wafer 12 by detecting whether the sum of the distance of the laser 61 emitted from the laser transmitter-receiver 700 to the surface of the wafer 12 and the distance of the laser 61 reflected from the surface of the wafer 12 to the laser transmitter-receiver 700 satisfies within the preset range. In other embodiments, at least the following methods can also be used to judge the distance:

[0129] (1) The control system separately determines whether the distances of the laser 61 emitted by the laser transmitter-receiver 700 to the surface of the wafer 12 and the laser 61 reflected back from the surface of the wafer 12 to itself both meet the ranges preset in the control system;

[0130] (2) The control system determines whether the distance of the laser 61 emitted by the laser transmitter-receiver 700 to the surface of the wafer 12 is equal to the distance of the laser 61 reflected back from the surface of the wafer 12 to itself;

[0131] In addition, the set state of the wafer 12 can also be determined by detecting the pulse duration of the laser 61 from emission to reception. Therefore, it can be specifically set according to actual operating conditions as needed.

[0132] Therefore, when the above two points are simultaneously satisfied, it indicates that the wafer 12 meets the process requirements, that is, it is in the horizontal target state.

[0133] When the wafer 12 is in a skewed state, when the laser transmitter-receiver 700 emits the laser 61 to the center of the wafer 12, due to the skewed state of the wafer 12, the normal position at the center of the wafer 12 will also shift, and the laser 61 will be reflected to other areas. Therefore, the laser transmitter-receiver 700 cannot receive the reflected laser 61 emitted to the surface of the wafer 12 by itself. At this time, the control system will detect that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted. The specific adjustment method is as follows:

[0134] An alarm prompt device is provided in the control system, and a wafer 12 fixture is provided at the edge of the wafer 12 to clamp the wafer 12. When the control system detects that the wafer 12 is in a skewed state, it will trigger the prompt function of the alarm prompt device. At this time, the state of the wafer 12 can be changed by adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt.

[0135] When the alarm prompt device no longer issues a prompt, it is necessary to use the above method of the laser transmitter-receiver 700 emitting the laser 61 to the center of the wafer 12 to detect the placement state of the wafer 12 again until the control system detects that the laser transmitter-receiver 700 can receive the reflected laser 61 and detects that the distance of the laser 61 from emission to reception meets the preset range, indicating that the wafer 12 is in the horizontal target state and meets the process requirements of the wafer 12.

[0136] In this embodiment, the control system provided with an alarm prompt device can detect in real time whether the wafer 12 is in a skewed state. Once it detects that the wafer 12 is in a skewed state, the control system will trigger the alarm prompt device to provide timely visual or audible prompts, enabling the operator to quickly notice the problem. When the alarm prompt device issues an alarm, the operator can change the placement state of the wafer 12 by adjusting the wafer 12 fixture, and can adjust the placement state of the wafer 12 by changing the clamping force of the wafer 12 fixture, the position of the clamping point, etc. After adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt function, it is necessary to detect the placement state of the wafer 12 again. The purpose of this process is to ensure that the wafer 12 gradually approaches the horizontal target state during the adjustment process. Through repeated adjustments and detections, the placement state of the wafer 12 can be gradually optimized until it is detected that the wafer 12 is in the horizontal target state.

[0137] In short, in this embodiment, when the control system detects that the laser transceiver 700 can receive the reflected laser 61 and detects that the sum of the distances of the laser 61 from emission to reception satisfies the preset range, it indicates that the wafer 12 is in the horizontal target state;

[0138] When the control system detects that the laser transceiver 700 cannot receive the reflected laser 61, it indicates that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted again until the control system detects that the laser transceiver 700 can receive the reflected laser 61 and detects that the sum of the distances of the laser 61 from emission to reception satisfies the preset range.

[0139] In this embodiment, by arranging the laser transceiver 700 directly below the center of the wafer 12, the control system can determine whether the position of the wafer 12 is in the horizontal target state based on whether the laser transceiver 700 can receive the reflected laser 61 it emits and the distance (i.e., wavelength) of the laser 61 emitted and reflected back by the laser transceiver 700. This detection method not only realizes the reliable detection of the horizontal state of the wafer 12, but also improves the detection accuracy, ensuring that the placement of the wafer 12 meets the process requirements in the manufacturing process.

[0140]

Embodiment 4

[0141] As Figures 6a - 6d shown, Embodiment 4 discloses a method for detecting the horizontal setting of a wafer 12.

[0142] The detection method for the horizontally arranged wafer 12 is after step S4 of Embodiment 2, that is: after the simulation measuring tool 300 is taken out when it is in the horizontal target state and the wafer 12 is placed on the wafer 12 carrying device 100, it further includes a step of performing a second detection on the placement state of the wafer 12, specifically including the following steps:

[0143] There are two laser emission receivers 700 provided outside the edge of the wafer 12 and a control system electrically connected to each laser emission receiver 700. The two laser emission receivers 700 are symmetrically arranged on both sides of the center of the wafer 12 and are located on the same horizontal plane 11 and have a height difference relative to the wafer 12 in the horizontal direction, so that each laser emission receiver 700 can emit a laser 61 towards the center of the wafer 12.

[0144] When starting the detection, both laser emission receivers 700 will emit a laser 61 towards the center of the wafer 12, and the control system detects whether the wafer 12 is in the horizontal target state by judging whether both laser emission receivers 700 can receive the reflected laser 61 emitted to the surface of the wafer 12 by the other laser emission receiver 700 and reflected from the surface of the wafer 12, and the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by the other laser emission receiver 700.

[0145] Specifically, when the wafer 12 is in the horizontal target state, both laser emission receivers 700 will emit the laser 61 to the center of the wafer 12, and both laser emission receivers 700 can receive the laser 61 emitted at the center of the wafer 12 by the other laser emission receiver 700 and reflected back from the center of the wafer 12. At the same time, the sum of the distances from the laser 61 emitted by each laser emission receiver 700 to the surface of the wafer 12 plus the distance from the surface of the wafer 12 to the other laser emission receiver 700 is within the range preset by the control system. The preset range needs to be set by the staff according to the specific structure and process requirements of the wafer 12. And, in this embodiment, it is to judge the placement state of the wafer 12 by detecting whether the sum of the distances from the laser 61 emitted by one of the two laser emission receivers 700 to the surface of the wafer 12 plus the distance from the surface of the wafer 12 to the other laser emission receiver 700 is within the preset range. In other embodiments, at least the following method can also be used to judge the distance:

[0146] (1) A method of using the control system to separately judge whether the distances from the laser 61 emitted by the two laser emission receivers 700 to the surface of the wafer 12 and the distances from the surface of the wafer 12 to the laser 61 reflected back to themselves are both within the range preset by the control system;

[0147] (2) The control system separately determines whether the distances of the laser 61 emitted from each of the two laser transmitter-receivers 700 to the surface of the wafer 12 and the distances of the laser 61 reflected back from the surface of the wafer 12 to itself are equal;

[0148] (3) The control system determines whether the sum of the distances of the laser 61 emitted from one of the two laser transmitter-receivers 700 to the surface of the wafer 12 and the distance of the laser 61 reflected from the surface of the wafer 12 to the other laser transmitter-receiver 700 is equal;

[0149] In addition, the set state of the wafer 12 can also be determined by detecting the pulse duration of the laser 61 from emission to reception. Therefore, it can be specifically set as needed according to the actual operation conditions. Thus, when the above two points are simultaneously satisfied, it indicates that the wafer 12 meets the process requirements, that is, it is in the horizontal target state.

[0150] When the wafer 12 is in a skewed state, when any one of the laser transmitter-receivers 700 emits the laser 61 to the center of the wafer 12, due to the skewed state of the wafer 12, the normal position at the center of the wafer 12 will also shift, and the laser 61 will be reflected to other areas. Therefore, the other laser transmitter-receiver 700 cannot receive the reflected laser 61 reflected from the surface of the wafer 12. At this time, the control system will detect that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted. The specific adjustment method is as follows:

[0151] An alarm prompt device is provided in the control system, and a wafer 12 fixture is provided at the edge of the wafer 12 to clamp the wafer 12. When the control system detects that the wafer 12 is in a skewed state, the prompting function of the alarm prompt device will be triggered. At this time, the state of the wafer 12 can be changed by adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt.

[0152] When the alarm prompt device no longer issues a prompt, it is necessary to use the above method of the two laser transmitter-receivers 700 emitting the laser 61 to the center of the wafer 12 to detect the placement state of the wafer 12 again until the control system detects that both laser transmitter-receivers 700 can receive the laser 61 emitted to the center of the wafer 12 by the other laser transmitter-receiver 700 and reflected back, and the sum of the distances of the laser 61 emitted by the two laser transmitter-receivers 700 from emission to reception is within the preset range, indicating that the wafer 12 is in the horizontal target state and meets the process requirements of the wafer 12.

[0153] In this embodiment, the control system equipped with an alarm prompt device can detect in real time whether the wafer 12 is in a skewed state. Once it detects that the wafer 12 is in a skewed state, the control system will trigger the alarm prompt device to provide timely visual or audible prompts, enabling the operator to quickly notice the problem. When the alarm prompt device issues an alarm, the operator can change the placement state of the wafer 12 by adjusting the wafer 12 fixture, such as by changing the clamping force and the position of the clamping point of the wafer 12 fixture to adjust the placement state of the wafer 12. After adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt function, it is necessary to detect the placement state of the wafer 12 again. The purpose of this process is to ensure that the wafer 12 gradually approaches the horizontal target state during the adjustment process. Through repeated adjustments and detections, the placement state of the wafer 12 can be gradually optimized until it is detected that the wafer 12 is in the horizontal target state.

[0154] In short, in this embodiment, when the control system detects that both laser emission receivers 700 can receive the reflected laser 61 emitted by the other laser emission receiver 700, and the sum of the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by the other laser emission receiver 700 both meet within the preset distance range, it indicates that the wafer 12 is in the horizontal target state;

[0155] When the control system detects that any one of the laser emission receivers 700 cannot receive the reflected laser 61 emitted by the other laser emission receiver 700, it indicates that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted again until the control system detects that both laser emission receivers 700 can receive the reflected laser 61 emitted by the other laser emission receiver 700, and the sum of the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by the other laser emission receiver 700 both meet within the preset distance range.

[0156] In this embodiment, by arranging two symmetric laser emission receivers 700 outside the edge of the wafer 12, the control system can perform symmetry detection on the horizontal state of the wafer 12. Specifically, the control system detects whether the wafer 12 is in the horizontal target state by judging whether both laser emission receivers 700 can receive the reflected laser 61 emitted to the center of the wafer 12 by the other, and by judging the distances (i.e., wavelengths) of the reflected laser 61 received by the two laser emission receivers 700. This detection method not only realizes reliable detection of the horizontal state of the wafer 12, but also improves the detection accuracy, ensuring that the placement of the wafer 12 meets the process requirements in the manufacturing process.

[0157]

Embodiment 5

[0158] AsFigures 7a - 7d As shown in Figures 7a - 7d , Embodiment 5 discloses a detection method for horizontally arranging a wafer 12.

[0159] The detection method for horizontally arranging the wafer 12 is after step S4 of Embodiment 2, that is: after the simulation measuring tool 300 is taken out when it is in the horizontal target state, and after the wafer 12 is placed on the wafer 12 carrying device 100, it further includes a step of performing a second detection on the placement state of the wafer 12, specifically including the following steps:

[0160] There are two laser emission receivers 700 outside the edge of the wafer 12 and a control system electrically connected to each laser emission receiver 700. The two laser emission receivers 700 are symmetrically arranged on both sides of the center of the wafer 12 and at the same horizontal height as the wafer 12, so that each laser emission receiver 700 can emit laser 61 towards the edge contour of the wafer 12.

[0161] When starting the detection, both laser emission receivers 700 will emit laser 61 towards the edge contour of the wafer 12, and the control system detects whether the wafer 12 is in the horizontal target state by judging whether both laser emission receivers 700 can receive the reflected laser 61 emitted by themselves, and the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by themselves.

[0162] Specifically, when the wafer 12 is in the horizontal target state, the two laser emission receivers 700 will emit laser 61 to the contour of the wafer 12, and both can receive the laser 61 emitted by themselves on the contour of the wafer 12 and reflected back from the contour of the wafer 12. At the same time, the sum of the distances from the laser 61 emitted by the laser emission receiver 700 to the contour of the wafer 12 plus the distance from the contour of the wafer 12 to the reflected laser 61 received by the laser emission receiver 700 for both laser emission receivers 700 all meet within the range preset by the control system. The preset range needs to be set by the staff according to the specific structure and process requirements of the wafer 12. And, in this embodiment, it is to judge the placement state of the wafer 12 by detecting whether the sum of the distances from one of the two laser emission receivers 700 to the contour of the wafer 12 plus the distance from the contour of the wafer 12 to the reflected laser 61 received by itself all meet within the preset range. In other embodiments, at least the following methods can also be used to judge the distance:

[0163] (1) A method of using the control system to separately judge whether the distances of the two laser emission receivers 700 from the laser 61 emitted by themselves to the contour of the wafer 12 and the distances of the laser 61 reflected back from the contour of the wafer 12 to themselves all meet within the range preset by the control system;

[0164] (2) The control system separately determines whether the distances of the laser 61 emitted from each of the two laser transceiver units 700 to the contour of the wafer 12 and the distances of the laser 61 reflected back from the contour of the wafer 12 to itself are equal;

[0165] (3) The control system determines whether the sum of the distances of the laser 61 emitted from each of the two laser transceiver units 700 to the contour of the wafer 12 and the distances of the laser 61 reflected from the contour of the wafer 12 to itself are equal;

[0166] In addition, the set state of the wafer 12 can also be determined by detecting the pulse duration of the laser 61 from emission to reception. Therefore, it can be specifically set according to actual operating conditions as needed. Thus, when the above two points are simultaneously satisfied, it indicates that the wafer 12 meets the process requirements, that is, it is in the horizontal target state.

[0167] When the wafer 12 is in a skewed state, when any one of the laser transceiver units 700 emits the laser 61 to the contour of the wafer 12, due to the skewed state of the wafer 12, the normal position at the edge of the wafer 12 will also shift, and the laser 61 will be reflected to other areas. Therefore, neither of the two laser transceiver units 700 can receive the reflected laser 61 reflected from the contour of the wafer 12. At this time, the control system will detect that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted. Specifically, the adjustment method is as follows:

[0168] An alarm reminder is provided in the control system, and a wafer fixture for clamping the wafer 12 is provided at the edge of the wafer 12. When the control system detects that the wafer 12 is in a skewed state, the reminder function of the alarm reminder will be triggered. At this time, the state of the wafer 12 can be changed by adjusting the wafer fixture until the alarm reminder no longer issues a reminder.

[0169] When the alarm reminder no longer issues a reminder, it is necessary to use the above method of the two laser transceiver units 700 emitting the laser 61 to the contour of the wafer 12 again to detect the placement state of the wafer 12 until the control system detects that both of the two laser transceiver units 700 can receive the laser 61 emitted to the contour of the wafer 12 and reflected back, and the sum of the distances of the laser 61 emitted by the two laser transceiver units 700 from emission to reception is within the preset range, indicating that the wafer 12 is in the horizontal target state and meets the process requirements of the wafer 12.

[0170] In this embodiment, the control system provided with an alarm prompt device can detect in real time whether the wafer 12 is in a skewed state. Once it detects that the wafer 12 is in a skewed state, the control system will trigger the alarm prompt device to provide timely visual or audible prompts, enabling the operator to quickly notice the problem. When the alarm prompt device issues an alarm, the operator can change the placement state of the wafer 12 by adjusting the wafer 12 fixture, and can adjust the placement state of the wafer 12 by changing the clamping force of the wafer 12 fixture, the position of the clamping point, etc. After adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt function, it is still necessary to detect the placement state of the wafer 12 again. The purpose of this process is to ensure that the wafer 12 gradually approaches the horizontal target state during the adjustment process. Through repeated adjustments and detections, the placement state of the wafer 12 can be gradually optimized until it is detected that the wafer 12 is in the horizontal target state.

[0171] In short, in this embodiment, when the control system detects that any one of the laser emission receivers 700 can receive the reflected laser 61 emitted by itself, and the sum of the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by themselves both meet within the preset distance range, it indicates that the wafer 12 is in the horizontal target state;

[0172] When the control system detects that any one of the laser emission receivers 700 cannot receive the reflected laser 61 emitted by itself, it indicates that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted again until the control system detects that any one of the laser emission receivers 700 can receive the reflected laser 61 emitted by itself, and the sum of the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by themselves both meet within the preset distance range.

[0173] In this embodiment, by arranging two symmetric laser emission receivers 700 outside the edge of the wafer 12, the control system can perform symmetry detection on the horizontal state of the wafer 12. Specifically, the control system detects whether the wafer 12 is in the horizontal target state by judging whether both of the laser emission receivers 700 can receive the reflected laser 61 emitted to the contour of the wafer 12 by themselves, and the distances at which the two laser emission receivers 700 receive the reflected laser 61 emitted by themselves, i.e., the wavelengths. This detection method not only realizes reliable detection of the horizontal state of the wafer 12, but also improves the detection accuracy, ensuring that the placement of the wafer 12 meets the process requirements in the manufacturing process.

[0174] Preferably, in other embodiments, the control system can also determine whether the wafer 12 is in the horizontal target state by judging whether the sum of the distances of the laser 61 emitted from the two laser transmitter-receivers 700 to the contour of the wafer 12 plus the distance of the laser 61 reflected from the contour of the wafer 12 to the laser transmitter-receiver 700 is equal.

[0175] Preferably, in this embodiment, the two laser transmitter-receivers 700 are arranged on the horizontal plane 11 with the largest diameter of the contour of the wafer 12, which can improve the duration of the laser 61 emitted from the laser transmitter-receiver 700 to the contour of the wafer 12, and thus improve the detection efficiency of the placement state of the wafer 12. In other embodiments, the two laser transmitter-receivers 700 can also be arranged at the thickness center of the wafer 12, and can be specifically arranged according to the actual structure form of the wafer 12 as required.

[0176]

Embodiment 6

[0177] As Figures 8a - 8b shown, Embodiment 6 discloses a method for detecting the horizontal setting of a wafer 12.

[0178] The method for detecting the horizontal setting of the wafer 12 is after step S4 of Embodiment 2, that is: after the simulation measuring tool 300 is taken out after being in the horizontal target state, and after the step of placing the wafer 12 on the wafer carrier device 100, it further includes a step of performing a second detection on the placement state of the wafer 12, specifically including the following steps:

[0179] At least three laser transmitter-receivers 700 and a control system electrically connected to each laser transmitter-receiver 700 are arranged above the surface of the wafer 12. In this embodiment, the number of laser transmitter-receivers 700 is three, and the three laser transmitter-receivers 700 are arranged on the same horizontal plane 11 and arranged at intervals in sequence, so that each laser transmitter-receiver 700 can emit laser 61 towards the surface of the wafer 12.

[0180] When starting the detection, the three laser transmitter-receivers 700 will all emit laser 61 towards the surface of the wafer 12, and the control system detects whether the wafer 12 is in the horizontal target state by judging whether each laser transmitter-receiver 700 can receive the reflected laser 61 emitted by itself, and the distance of each laser transmitter-receiver 700 receiving the reflected laser 61 emitted by itself.

[0181] Specifically, when the wafer 12 is in the horizontal target state, the three laser transceiver units 700 emit the laser 61 to the surface of the wafer 12 and can receive the laser 61 that they emit to the surface of the wafer 12 and is reflected back from the surface of the wafer 12. At the same time, the sum of the distance of the laser 61 emitted from the laser transceiver unit 700 to the surface of the wafer 12 and the distance of the laser 61 reflected from the surface of the wafer 12 back to the laser transceiver unit 700 for each of the three laser transceiver units 700 is within the range preset by the control system. The staff needs to set this preset range according to the specific structure and process requirements of the wafer 12. And in this embodiment, the method of detecting whether the sum of the distance of the laser 61 emitted from each of the three laser transceiver units 700 to the surface of the wafer 12 and the distance of the laser 61 reflected from the surface of the wafer 12 back to the laser transceiver unit 700 is within the preset range is used to determine the placement state of the wafer 12. In other embodiments, at least the following methods can be used for example to make a judgment:

[0182] (1) Using the control system to separately judge whether the distance of the laser 61 emitted from each of the three laser transceiver units 700 to the surface of the wafer 12 and the distance of the laser 61 reflected back to itself from the surface of the wafer 12 are both within the range preset by the control system;

[0183] (2) Using the control system to separately judge whether the distance of the laser 61 emitted from each of the three laser transceiver units 700 to the surface of the wafer 12 is equal to the distance of the laser 61 reflected back to itself from the surface of the wafer 12;

[0184] (3) Using the control system to judge whether the sum of the distance of the laser 61 emitted from each of the three laser transceiver units 700 to the surface of the wafer 12 to the distance of the laser 61 reflected back to itself from the surface of the wafer 12 is equal;

[0185] In addition, the setting state of the wafer 12 can also be judged by detecting the pulse duration of the laser 61 from emission to reception, so it can be specifically set according to the actual operation situation as needed.

[0186] Therefore, when the above two points are both satisfied, it indicates that the wafer 12 meets the process requirements, that is, it is in the horizontal target state.

[0187] When the wafer 12 is in a skewed state, when any one of the laser emission receivers 700 emits the laser 61 to the surface of the wafer 12, due to the skewed state of the wafer 12, the normal position at the surface of the wafer 12 will also shift, and the laser 61 will be reflected to other areas. Therefore, none of the three laser emission receivers 700 can receive the reflected laser 61 reflected from the surface of the wafer 12. At this time, the control system will detect that the wafer 12 is in a skewed state, and then the wafer 12 needs to be adjusted. The specific adjustment method is as follows:

[0188] An alarm prompt device is provided in the control system, and a wafer 12 fixture is provided at the edge of the wafer 12 to clamp the wafer 12. When the control system detects that the wafer 12 is in a skewed state, it will trigger the prompt function of the alarm prompt device. At this time, the state of the wafer 12 can be changed by adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt.

[0189] When the alarm prompt device no longer issues a prompt, it is necessary to use the above three laser emission receivers 700 to emit the laser 61 to the surface of the wafer 12 again to detect the placement state of the wafer 12 until the control system detects that all three laser emission receivers 700 can receive the laser 61 emitted by themselves to the surface of the wafer 12 and reflected back, and the distances from the emission to the reception of the laser 61 emitted by the three laser emission receivers 700 all meet the preset range, indicating that the wafer 12 is in the horizontal target state and meets the process requirements of the wafer 12.

[0190] In this embodiment, the control system provided with the alarm prompt device can detect in real time whether the wafer 12 is in a skewed state. Once it detects that the wafer 12 is in a skewed state, the control system will trigger the alarm prompt device to provide timely visual or sound prompts, enabling the operator to quickly detect the problem. When the alarm prompt device issues an alarm, the operator can change the placement state of the wafer 12 by adjusting the wafer 12 fixture, and can adjust the placement state of the wafer 12 by changing the clamping force and clamping point position of the wafer 12 fixture. After adjusting the wafer 12 fixture so that the alarm prompt device no longer issues a prompt function, it is still necessary to detect the placement state of the wafer 12 again. The purpose of this process is to ensure that the wafer 12 gradually tends to the horizontal target state during the adjustment process. Through repeated adjustment and detection, the placement state of the wafer 12 can be gradually optimized until it is detected that the wafer 12 is in the horizontal target state.

[0191] In short, in this embodiment, when the control system detects that any one of the laser emission receivers 700 can receive the reflected laser 61 emitted by itself, and the distances at which each laser emission receiver 700 receives the reflected laser 61 emitted by itself are all within the preset distance range, it indicates that the wafer 12 is in the horizontal target state;

[0192] When the control system detects that any one of the laser emission receivers 700 cannot receive the reflected laser 61 emitted by itself, it indicates that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted again until the control system detects that any one of the laser emission receivers 700 can receive the reflected laser 61 emitted by itself, and the sum of the distances at which each laser emission receiver 700 receives the reflected laser 61 emitted by itself is within the preset distance range.

[0193] In this embodiment, by arranging at least three laser emission receivers 700 on the same horizontal plane 11 above the surface of the wafer 12 at intervals in sequence, the control system uses the principle of "three points determine a plane" to realize multi-point detection of the position of the wafer 12, which helps to more comprehensively understand the overall horizontal state of the wafer 12. Specifically, the control system detects whether the wafer 12 is in the horizontal target state by judging whether each laser emission receiver 700 can receive the reflected laser 61 emitted to the surface of the wafer 12 by itself, and the distance (i.e., wavelength) at which each laser emission receiver 700 receives the reflected laser 61 emitted to the surface of the wafer 12 by itself. This detection method not only realizes reliable detection of the horizontal state of the wafer 12, but also improves the detection accuracy, ensuring that the placement of the wafer 12 meets the process requirements in the manufacturing process.

[0194]

Embodiment 7

[0195] As Figures 9a - 9d shown, Embodiment 7 discloses a method for detecting the horizontal setting of a wafer 12.

[0196] The method for detecting the horizontal setting of the wafer 12 is after step S4 of Embodiment 2, that is: after the simulation measuring tool 300 is taken out when the simulation measuring tool 300 is in the horizontal target state, and after the step of placing the wafer 12 on the wafer carrier device 100, it further includes a step of secondarily detecting the placement state of the wafer 12, specifically including the following steps:

[0197] At least two pairs of laser transmitter-receivers 700 that are symmetrically arranged on both sides of the center of the wafer 12 and are located above the surface of the wafer 12 are provided, as well as a control system electrically connected to each laser transmitter-receiver 700. In this embodiment, two pairs of laser transmitter-receivers 700, that is, four laser transmitter-receivers 700, are used for detection. The four laser transmitter-receivers 700 are all on the same horizontal plane 11, are arranged at intervals in sequence, and are symmetrically arranged in pairs. The two laser transmitter-receivers 700 in each group emit laser light 61 to each other.

[0198] When starting the detection, the two laser transmitter-receivers 700 in each group emit laser light 61 towards the other laser transmitter-receiver 700, and the control system detects whether the wafer 12 is in the horizontal target state by determining whether the two laser transmitter-receivers 700 in each group can both receive the laser light 61 emitted by the other correspondingly arranged laser transmitter-receiver 700.

[0199] Specifically, when the wafer 12 is in the horizontal target state, the two laser transmitter-receivers 700 emit laser light 61 towards each other, and the two laser transmitter-receivers 700 can both receive the laser light 61 emitted by the other correspondingly arranged laser transmitter-receiver 700.

[0200] When the wafer 12 is in a skewed state, when any one of the laser transmitter-receivers 700 emits the laser light 61 to the opposite laser transmitter-receiver 700, due to the skewed state of the wafer 12, the wafer 12 will block the emitting end of the laser transmitter-receiver 700, causing the laser light 61 to be emitted only onto the wafer 12, and the corresponding laser transmitter-receiver 700 cannot receive the laser light 61 it emits. At this time, the control system will detect that the wafer 12 is in a skewed state, and then the wafer 12 needs to be adjusted. The specific adjustment method is as follows:

[0201] An alarm reminder is provided in the control system, and a wafer 12 fixture is provided at the edge of the wafer 12 to clamp the wafer 12. When the control system detects that the wafer 12 is in a skewed state, it will trigger the reminder function of the alarm reminder. At this time, the state of the wafer 12 can be changed by adjusting the wafer 12 fixture until the alarm reminder no longer gives a reminder.

[0202] When the alarm reminder no longer gives a reminder, it is necessary to use the above method of each group of laser transmitter-receivers 700 emitting laser light 61 to each other to detect the placement state of the wafer 12 again until the control system detects that any one of the laser transmitter-receivers 700 can receive the laser light 61 emitted by the other correspondingly arranged laser transmitter-receiver 700, indicating that the wafer 12 is in the horizontal target state and meets the process requirements of the wafer 12.

[0203] In this embodiment, the control system provided with an alarm prompt device can detect in real time whether the wafer 12 is in a skewed state. Once it detects that the wafer 12 is in a skewed state, the control system will trigger the alarm prompt device to provide timely visual or sound prompts, enabling the operator to quickly notice the problem. When the alarm prompt device issues an alarm, the operator can change the placement state of the wafer 12 by adjusting the wafer 12 fixture, and can adjust the placement state of the wafer 12 by changing the clamping force and the position of the clamping point of the wafer 12 fixture. After adjusting the wafer 12 fixture until the alarm prompt device no longer issues a prompt function, it is still necessary to detect the placement state of the wafer 12 again. The purpose of this process is to ensure that the wafer 12 gradually approaches the horizontal target state during the adjustment process. Through repeated adjustments and detections, the placement state of the wafer 12 can be gradually optimized until it is detected that the wafer 12 is in the horizontal target state.

[0204] In short, in this embodiment, when the control system detects that any one of the laser emission receivers 700 can receive the laser 61 emitted by another correspondingly arranged laser emission receiver 700, it indicates that the wafer 12 is in the horizontal target state;

[0205] When the control system detects that any one of the laser emission receivers 700 cannot receive the laser 61 emitted by another correspondingly arranged laser emission receiver 700, it indicates that the wafer 12 is in a skewed state, and the wafer 12 needs to be adjusted again until the control system detects that any one of the laser emission receivers 700 can receive the laser 61 emitted by another correspondingly arranged laser emission receiver 700.

[0206] In this embodiment, by arranging at least two pairs of laser emission receivers 700 that are symmetrically arranged on both sides of the center of the wafer 12 at the outer edge of the wafer 12 and above the surface of the wafer 12, the control system can achieve symmetry detection. Specifically, the control system detects whether the wafer 12 is in the horizontal target state by determining whether both of the two laser emission receivers 700 in each group can receive the laser 61 emitted by another laser emission receiver 700. Moreover, by using at least two groups of laser emission receivers 700, the reliability of the detection is improved. This detection method not only realizes the reliable detection of the horizontal state of the wafer 12, but also improves the detection accuracy, ensuring that the placement of the wafer 12 meets the process requirements in the manufacturing process.

[0207] However, in this embodiment, before each group of laser emission receivers 700 is arranged on the outer edge of the wafer 12 and above the surface of the wafer 12, it is necessary to control and plan the horizontal height difference between each group of laser emission receivers 700 and the wafer 12, so that the height difference is controlled within the maximum deflection height of the wafer 12, or control the emission angle of the laser 61 emitted by each laser emission receiver 700 within the maximum deflection angle of the wafer 12, to avoid the situation that when the wafer 12 is deflected, the wafer 12 cannot block any laser emission receiver 700, resulting in the failure of the detection of the placement state of the wafer 12.

[0208] Preferably, in this embodiment, the setting positions of the four laser emission receivers 700 in the two groups satisfy the setting form of the coordinate axes. Specifically, the included angle between the connecting lines of each group of laser emission receivers 700 is 90° and forms an X-Y coordinate system. The two laser emission receivers 700 in each direction form the positive coordinate and the negative coordinate in this direction. The specific setting form of the laser emission receivers 700 can be set as required.

[0209] Although the specific implementation manners of the present invention have been described above, those skilled in the art should understand that this is only an example. The protection scope of the present invention is defined by the appended claims. Without departing from the principles and essence of the present invention, those skilled in the art can make various changes or modifications to these implementation manners, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. A wafer carrier device, characterized in that, The wafer carrying device is arranged at the edge of the wafer and includes at least three groups of wafer adjusting mechanisms, and at least three groups of the wafer adjusting mechanisms are arranged at intervals along the edge of the wafer in sequence; Each group of the wafer adjusting mechanisms includes a carrier for carrying the wafer and arranged on a horizontal plane and a driving component for driving the carrier to move, and at least part of one surface of the carrier for carrying the wafer has a ramp section, and the edge of the wafer is carried on the ramp section, and the driving component is used to drive the carrier to move to change the inclination angle of the ramp section of the carrier relative to the wafer.

2. The wafer carrier device according to claim 1, wherein The driving component includes: a push rod and a lead screw device. Wherein, one end of the push rod abuts against the carrier, and the other end of the push rod is connected to the nut of the lead screw device. The motor of the lead screw device drives the screw of the lead screw device to rotate to drive the push rod to move along the extension direction of the screw through the nut threadedly connected to the screw, so as to change the inclination angle of the ramp section of the carrier relative to the wafer.

3. A wafer-level detection method for detecting whether the placement of a wafer meets the process requirements, characterized in that, The detection method for horizontally arranging the wafer adopts the wafer carrying device described in any one of claims 1-2, and the detection method for horizontally arranging the wafer includes the following steps: S1. Place a simulation measuring tool with the same cross-sectional size as the wafer on the wafer carrying device; S2. Place a measuring tool provided with a light-transmitting hole on the surface of the simulation measuring tool, and arrange a receiving screen on one side of the measuring tool; S3. On the side of the measuring tool away from the receiving screen, use a laser emitting device to emit laser light towards the light-transmitting hole of the measuring tool; When the light spot of the laser passing through the light-transmitting hole appears within the preset area of the receiving screen, the simulation measuring tool is in a horizontal target state, and then the wafer is placed on the wafer carrying device; When the light spot of the laser passing through the light-transmitting hole does not appear within the preset area of the receiving screen, the simulation measuring tool is in a skewed state. Then, the driving component in the wafer carrying device is used to adjust the inclination angle of the carrier relative to the simulation measuring tool to change the skewed state of the simulation measuring tool, and then step S3 is repeated until the simulation measuring tool is in a horizontal target state; S4. After the simulation measuring tool is in a horizontal target state, take out the simulation measuring tool and place the wafer on the wafer carrying device.

4. The wafer-level detection method according to claim 3, characterized in that, Two non-coincident but partially intersecting light-transmitting holes are provided on the measuring tool, and the laser passes through the partially intersecting area.

5. The detection method with the wafer horizontally arranged as described in claim 3, characterized in that, After step S4, it further includes a step of performing a second detection on the placement state of the wafer, specifically including the following steps: A laser emitting receiver capable of emitting laser light towards the center of the wafer in the vertical direction and a control system electrically connected to the laser emitting receiver are arranged directly below the center of the wafer. The control system detects whether the wafer is in a horizontal target state by judging whether the laser emitting receiver can receive the reflected laser light emitted by itself and the distance of the laser light received from the wafer after reflection; When the control system detects that the laser emitting receiver can receive the reflected laser light and detects that the distance from the emission to the reception of the laser light meets the preset range, it indicates that the wafer is in a horizontal target state; When the control system detects that the laser emission receiver cannot receive the reflected laser, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that the laser emission receiver can receive the reflected laser and the distance from laser emission to reception meets the preset range.

6. The detection method with the wafer horizontally arranged as claimed in claim 3, wherein, After step S4, it further includes a step of performing a second detection on the placement state of the wafer, specifically including the following steps: Two laser emission receivers are provided outside the edge of the wafer, and a control system electrically connected to each laser emission receiver. The two laser emission receivers are symmetrically arranged on both sides of the wafer center and are on the same horizontal plane and have a height difference in the horizontal direction relative to the wafer, so as to be able to emit laser towards the center of the wafer. The control system detects whether the wafer is in the horizontal target state by judging whether any one of the two laser emission receivers can receive the reflected laser emitted by the other laser emission receiver, and the distances at which the two laser emission receivers receive the reflected laser emitted by the other laser emission receiver. When the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by the other laser emission receiver, and the distances at which the two laser emission receivers receive the reflected laser emitted by the other laser emission receiver both meet the preset distance range, it indicates that the wafer is in the horizontal target state. When the control system detects that any one of the laser emission receivers cannot receive the reflected laser emitted by the other laser emission receiver, it indicates that the wafer is in a skewed state, and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by the other laser emission receiver, and the distances at which the two laser emission receivers receive the reflected laser emitted by the other laser emission receiver both meet the preset distance range.

7. The detection method with the wafer horizontally arranged as described in claim 3, characterized in that, After step S4, it further includes a step of performing a second detection on the placement state of the wafer, specifically including the following steps: Two laser emission receivers are provided outside the edge of the wafer, and a control system electrically connected to each laser emission receiver. The two laser emission receivers are symmetrically arranged on both sides of the wafer center and are at the same horizontal height as the wafer, so as to be able to emit laser towards the edge contour of the wafer. The control system detects whether the wafer is in the horizontal target state by judging whether both of the two laser emission receivers can receive the reflected laser emitted by themselves, and the distances at which the two laser emission receivers receive the reflected laser emitted by themselves. When the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances at which the two laser emission receivers receive the reflected laser emitted by themselves both meet the preset distance range, it indicates that the wafer is in the horizontal target state. When the control system detects that any one of the laser emission receivers cannot receive the reflected laser emitted by itself, it indicates that the wafer is in a skewed state and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances at which the two laser emission receivers receive the reflected laser emitted by themselves both meet the preset distance range.

8. The detection method with the wafer horizontally arranged as claimed in claim 3, characterized in that, After step S4, there is also a step of performing a second detection on the placement state of the wafer, which specifically includes the following steps: At least three laser emission receivers and a control system electrically connected to each of the laser emission receivers are provided above the surface of the wafer. Each of the laser emission receivers is arranged on the same horizontal plane and is arranged at intervals in sequence so as to be able to emit laser light towards the surface of the wafer. The control system detects whether the wafer is in a horizontal target state by judging whether each of the laser emission receivers can receive the reflected laser emitted by itself and the distances at which each of the laser emission receivers receives the reflected laser emitted by itself. When the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself and the distances at which each laser emission receiver receives the reflected laser emitted by itself all meet the preset distance range, it indicates that the wafer is in a horizontal target state. When the control system detects that any one of the laser emission receivers cannot receive the reflected laser emitted by itself, it indicates that the wafer is in a skewed state and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the reflected laser emitted by itself, and the distances at which each laser emission receiver receives the reflected laser emitted by itself all meet the preset distance range.

9. The wafer-level detection method according to claim 3, wherein After step S4, there is also a step of performing a second detection on the placement state of the wafer, which specifically includes the following steps: At least two pairs of laser emission receivers that are symmetrically arranged on both sides of the wafer center and are located above the surface of the wafer edge of the wafer and a control system electrically connected to each of the laser emission receivers are provided. Each group of the laser emission receivers is arranged on the same horizontal plane and is arranged at intervals in sequence. The two laser emission receivers in each group emit laser light to each other. The control system detects whether the wafer is in a horizontal target state by judging whether the two laser emission receivers in each group can receive the laser light emitted by another correspondingly arranged laser emission receiver. When the control system detects that any one of the laser emission receivers can receive the laser light emitted by another correspondingly arranged laser emission receiver, it indicates that the wafer is in a horizontal target state. When the control system detects that any one of the laser emission receivers cannot receive the laser emitted by another correspondingly arranged laser emission receiver, it indicates that the wafer is in a skewed state and the wafer needs to be adjusted again until the control system detects that any one of the laser emission receivers can receive the laser emitted by another correspondingly arranged laser emission receiver.

10. The wafer-level detection method according to any one of claims 5-9, characterized in that When the wafer is in a skewed state and needs to be adjusted again, the following adjustment steps are included: An alarm prompt is provided in the control system, and a wafer fixture is also provided at the edge of the wafer to clamp the wafer. When the control system detects that the wafer is in a skewed state, the prompt function of the alarm prompt will be triggered. At this time, adjust the wafer fixture to change the state of the wafer until the alarm prompt no longer gives a prompt, and then repeat the above steps of detecting the placement state of the wafer again until it is detected that the wafer is in the horizontal target state.

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