A gallium nitride-based semiconductor laser

By incorporating a multilayer vacancy electron phonon modulation layer in a gallium nitride-based semiconductor laser, the problem of temperature non-uniformity caused by heat loss was solved, improving the heat dissipation and beam quality of the laser and enhancing its reliability.

CN120237530BActive Publication Date: 2026-05-26GEN SEMICONDUCTOR (ANHUI) CO LTD
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Patent Information

Application Number
CN202510377628.1
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-03-28
Publication Date
2026-05-26
Estimated Expiration
2045-03-28

AI Technical Summary

Technical Problem

Nitride semiconductor lasers suffer from heat loss, which leads to uneven temperature distribution, causing uneven thermal expansion and thermal stress distribution. This results in temperature quenching, laser breakage, thermal lensing effect, and stress birefringence effect, affecting the quality and reliability of the laser beam.

Method used

By setting up a multi-layered, multi-vacancy electron-phonon modulation layer in a semiconductor laser, and by limiting the electron affinity distribution and polarization optical phonon energy distribution of each layer, single-vacancy and multi-vacancy modulated electron-phonon structures are formed. This reduces the photon energy difference between the pump light and the oscillating light, reduces heat loss, improves heat dissipation, and alleviates thermal mismatch problems.

Benefits of technology

It effectively suppresses the thermal lensing effect and stress birefringence effect, improves the laser beam quality, and enhances the transmission performance and reliability of the laser beam.

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Abstract

This invention proposes a gallium nitride-based semiconductor laser, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention incorporates a multi-layered, multi-vacancy electron-phonon modulation layer within the semiconductor laser element, defining the electron affinity distribution and polarization optical phonon energy distribution characteristics of each multi-vacancy electron-phonon modulation layer. This forms single-vacancy, vacancy cluster, and multi-vacancy modulated electron-phonon structures, localizing electron-phonons between the lower confinement layer and the lower waveguide layer. This reduces the Stokes shift caused by the photon energy difference between the pump light and the oscillating light, reduces heat loss from phonon vibration and phonon transport, improves the heat dissipation of the laser element, mitigates interlayer thermal mismatch, suppresses the thermal lensing effect and stress birefringence effect of the laser, improves laser beam distortion and depolarization, and enhances the laser beam quality factor.
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