Method and device for obtaining electron density profile and ionospheric parameters

Abstract

The present application relates to the technical field of geophysics, in particular to a method and device for obtaining electron density profile and ionospheric parameters, wherein the method comprises: inputting the detection time information and the detection position information of target vertical TEC data into a preset IRI model to obtain first ionospheric parameters; calculating the initial ionospheric F2 layer critical frequency by using the target vertical TEC data to obtain second ionospheric parameters; inputting the first ionospheric parameters and the second ionospheric parameters into a preset QPS model and a preset Epstein model to obtain the electron density at different altitudes in the ionosphere; and constructing an electron density profile model based on the electron density at different altitudes. Thus, the problems in the related art that the cost and operation cost are very high, cannot meet the needs of practical applications, have large errors, and are difficult to meet the needs of high-precision refraction error correction are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of geophysics, and in particular to a method and device for acquiring electron density profiles and ionospheric parameters. Background Art

[0002] Accurately estimating the ionospheric electron density is crucial for applications such as remote sensing systems, communications, and satellite positioning and navigation, helping to mitigate the impacts of adverse space weather events. However, due to the many regular and irregular variations in the ionosphere, such as diurnal variations, seasonal variations, occasional E-layers, ionospheric storms, and variations in the solar activity cycle, modeling the three-dimensional ionospheric electron density remains challenging.

[0003] Among the related technologies, vertical ionospheric measurements can be performed at the bottom ionosphere; incoherent scattering radar can be used to detect the electron density profile below 80 km, thereby confirming multiple parameter information in the ionosphere; ionospheric electron density can be predicted using some models, such as the IRI (International Reference Ionosphere) model; and the ground-based GNSS (Global Navigation Satellite System) receiving system can be used to construct a TEC (Total Electronic Content) tomography algorithm for the ionospheric electron density profile.

[0004] However, in the related technology, the construction and operating costs are very expensive, which cannot meet the needs of actual applications. In addition, the errors are large and it is difficult to meet the needs of high-precision refraction error correction, and improvement is urgently needed. Summary of the Invention

[0005] The present invention provides a method and device for obtaining electron density profiles and ionospheric parameters to solve the problems in related technologies, such as very high construction and operating costs, which cannot meet the needs of actual applications, large errors, and difficulty in meeting the needs of high-precision refraction error correction.

[0006] A first aspect of the present invention provides a method for obtaining electron density profiles and ionospheric parameters, which is applied to a model construction stage, wherein the method comprises the following steps: inputting detection time information and detection position information of target vertical TEC data into a preset IRI model to obtain first ionospheric parameters required for constructing an electron density profile model in the ionosphere; using the target vertical TEC data to calculate the critical frequency of the initial ionospheric F2 layer to obtain second ionospheric parameters required for constructing the electron density profile model; inputting the first ionospheric parameter and the second ionospheric parameter into a preset QPS (Queries Per Second) model and a preset Epstein model to obtain electron densities at different altitudes in the ionosphere; and constructing the electron density profile model based on the electron densities at different altitudes.

[0007] Optionally, in one embodiment of the present invention, the inputting the first ionospheric parameter and the second ionospheric parameter into a preset QPS model and a preset Epstein model to obtain the electron density at different heights in the ionosphere includes: calculating the first electron density of the E layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter and the forward QP model of the E layer in the preset QPS model; calculating the second electron density of the connecting layer between the E layer and the F1 layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter and the reverse QP model of the connecting layer between the E layer and the F1 layer in the preset QPS model; calculating the second electron density of the F layer in the ionosphere based on the first ionospheric parameter, the second ionospheric parameter and the forward QP model of the F1 layer in the preset QPS model. the first ionosphere parameter, the second ionosphere parameter, and the preset Epstein model, calculating the third electron density of the connecting layer between the F1 layer and the F2 layer in the ionosphere; calculating the fourth electron density of the connecting layer between the F1 layer and the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and the reverse QP model of the connecting layer between the F1 layer and the F2 layer in the preset QPS model; calculating the fifth electron density of the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and the forward QP model of the F2 layer in the preset QPS model; calculating the sixth electron density at other altitudes in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and the preset Epstein model; and obtaining the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density.

[0008] Optionally, in one embodiment of the present invention,

[0009] The expression of the first electron density may be, but is not limited to,:

[0010] ,

[0011] The expression of the second electron density can be, but is not limited to:

[0012] ,

[0013] The expression of the third electron density can be, but is not limited to:

[0014] ,

[0015] The expression of the fourth electron density can be, but is not limited to,:

[0016] ,

[0017] The expression of the fifth electron density can be, but is not limited to,:

[0018] ,

[0019] The expression of the sixth electron density can be, but is not limited to,:

[0020] ,

[0021] in, is the peak value of the electron density of the E layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density in the E layer, For any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak of the electron density of the connecting layer between the E layer and the F1 layer, is the electron density at any height of the connecting layer between the E layer and the F1 layer, is the peak electron density of the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between F1 and F2 layers, No actual physical meaning. is the height of the Earth's center where the electron density peak of the F1 and F2 layers connect. is the electron density at any height of the connecting layer between F1 and F2 layers, is the peak value of the electron density of the F2 layer, No actual physical meaning. is the height of the Earth's center at the peak of the electron density in the F2 layer, is the electron density at any height of the F2 layer, In the top ionosphere The electron concentration at height, is the maximum electron concentration, for At height, is the height of the ionosphere relative to the ground, is the atmospheric height, is a hyperbolic secant function. Optionally, in one embodiment of the present invention, the expression of the critical frequency of the ionosphere F2 layer may be, but is not limited to:

[0022] ,

[0023] in, is the critical frequency of the ionosphere F2 layer, in MHz, For actual measurement , the unit is TECU, It is the experience value related to the month, in km.

[0024] Optionally, in one embodiment of the present invention, the expression of the electron density profile model may be, but is not limited to:

[0025] ,

[0026] in, is the bottom height of layer E, is the peak electron concentration height of the F2 layer, is the height of the top of the ionosphere, In the bottom ionosphere The electron concentration at height, In the top ionosphere The electron concentration at height, is the height of the ionosphere relative to the ground.

[0027] The second aspect embodiment of the present application provides an electronic density profile and ionospheric parameter acquisition method, which is applied to a model application stage and comprises the following steps: acquiring actual vertical TEC data in an ionosphere; obtaining predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and a pre-constructed electronic density profile model, wherein the pre-constructed electronic density profile model is obtained from electronic densities at different altitudes; calculating an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; updating an ionospheric F2 layer peak height in a first ionospheric parameter and an ionospheric F2 layer critical frequency in a second ionospheric parameter based on the initial vertical difference under a preset update condition until a vertical difference meeting a preset difference condition is obtained, and determining a final electronic density, a final first ionospheric parameter and a final second ionospheric parameter in the ionosphere by using the vertical difference.

[0028] Optionally, in one embodiment of the present application, the expression of the vertical difference can be, but is not limited to, the following:

[0029] ,

[0030] wherein, the actual vertical TEC data, the predicted vertical TEC data, the absolute value.

[0031] The third aspect embodiment of the present application provides an electronic density profile and ionospheric parameter acquisition device, which is applied to a model construction stage and comprises: a first acquisition module configured to input detection time information and detection position information of target vertical TEC data into a preset IRI model to acquire a first ionospheric parameter required for constructing an electronic density profile model in an ionosphere; a first generation module configured to calculate an initial ionospheric F2 layer critical frequency by using target vertical TEC data to obtain a second ionospheric parameter required for constructing the electronic density profile model; a second generation module configured to input the first ionospheric parameter and the second ionospheric parameter into a preset QPS model and a preset Epstein model to obtain electronic densities at different altitudes in the ionosphere; and a construction module configured to construct the electronic density profile model based on the electronic densities at the different altitudes.

[0032] Optionally, in one embodiment of the present invention, the second generating module includes: a first calculating unit for calculating the first electron density of the E layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the forward QP model of the E layer in the preset QPS model; a second calculating unit for calculating the second electron density of the connecting layer between the E layer and the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the reverse QP model of the connecting layer between the E layer and the F1 layer in the preset QPS model; a third calculating unit for calculating the third electron density of the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the forward QP model of the F1 layer in the preset QPS model; a fourth calculating unit for calculating the third electron density of the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the reverse QP model of the connecting layer between the E layer and the F1 layer in the preset QPS model; The method comprises the following steps: calculating a fourth electron density of the connecting layer between the F1 layer and the F2 layer in the ionosphere based on the second ionosphere parameter and the reverse QP model of the connecting layer between the F1 layer and the F2 layer in the preset QPS model; a fifth calculating unit being used to calculate the fifth electron density of the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the forward QP model of the F2 layer in the preset QPS model; a sixth calculating unit being used to calculate the sixth electron density at other altitudes in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the preset Epstein model; and a generating unit being used to obtain the electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density and / or the sixth electron density.

[0033] Optionally, in one embodiment of the present invention,

[0034] The expression of the first electron density may be, but is not limited to,:

[0035] ,

[0036] The expression of the second electron density can be, but is not limited to:

[0037] ,

[0038] The expression of the third electron density can be, but is not limited to:

[0039] ,

[0040] The expression of the fourth electron density can be, but is not limited to,:

[0041] ,

[0042] The expression of the fifth electron density can be, but is not limited to,:

[0043] ,

[0044] The expression of the sixth electron density can be, but is not limited to,:

[0045] ,

[0046] in, is the peak value of the electron density of the E layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density in the E layer, For any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak of the electron density of the connecting layer between the E layer and the F1 layer, is the electron density at any height of the connecting layer between the E layer and the F1 layer, is the peak electron density of the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between F1 and F2 layers, No actual physical meaning. is the height of the Earth's center where the electron density peak of the F1 and F2 layers connect. is the electron density at any height of the connecting layer between F1 and F2 layers, is the peak value of the electron density of the F2 layer, No actual physical meaning. is the height of the Earth's center at the peak of the electron density in the F2 layer, is the electron density at any height of the F2 layer, The top ionosphere The electron concentration at height, is the maximum electron concentration, for At height, is the height of the ionosphere relative to the ground, is the atmospheric height, is the hyperbolic secant function.

[0047] Optionally, in one embodiment of the present invention, the expression of the critical frequency of the ionosphere F2 layer may be, but is not limited to,:

[0048] ,

[0049] in, is the critical frequency of the ionosphere F2 layer, in MHz, For actual measurement , the unit is TECU, It is the experience value related to the month, in km.

[0050] Optionally, in one embodiment of the present invention, the expression of the electron density profile model may be, but is not limited to:

[0051] ,

[0052] in, is the bottom height of layer E, is the peak electron concentration height of the F2 layer, is the height of the top of the ionosphere, In the bottom ionosphere The electron concentration at height, The top ionosphere The electron concentration at height, is the height of the ionosphere relative to the ground.

[0053] In a fourth aspect, an embodiment of the present invention provides an apparatus for acquiring electron density profiles and ionospheric parameters, which is applied to a model application stage, wherein the apparatus comprises: a second acquisition module for acquiring actual vertical TEC data in the ionosphere; a third generation module for obtaining predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and a pre-constructed electron density profile model, wherein the pre-constructed electron density profile model is obtained by electron densities at different heights; a calculation module for calculating an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; a determination module for updating, based on the initial vertical difference, the ionospheric F2 layer peak height in the first ionospheric parameter and the ionospheric F2 layer critical frequency in the second ionospheric parameter according to a preset update condition, until a vertical difference that meets the preset difference condition is obtained, and using the vertical difference to determine a final electron density in the ionosphere, a final first ionospheric parameter, and a final second ionospheric parameter.

[0054] Optionally, in one embodiment of the present invention, the expression of the vertical difference may be, but is not limited to,:

[0055] ,

[0056] in, is the actual vertical TEC data, To predict vertical TEC data, is an absolute value.

[0057] A fifth aspect of the present invention provides an electronic device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for acquiring electron density profiles and ionospheric parameters as described in the above embodiments.

[0058] A sixth aspect of the present invention provides a computer-readable storage medium, which stores a computer program. When the program is executed by a processor, it implements the above-mentioned method for obtaining electron density profiles and ionospheric parameters.

[0059] A seventh aspect of the present invention provides a computer program product, comprising a computer program, which, when executed, implements the above-mentioned method for obtaining electron density profiles and ionospheric parameters.

[0060] The embodiments of the present invention can input the detection time and location information from the target vertical TEC data into a preset IRI model to construct a first ionospheric parameter. The target vertical TEC data is then used to construct a second ionospheric parameter. Furthermore, the preset QPS model and the preset Epstein model are combined to obtain electron density at different altitudes and construct an electron density profile model. By using multiple QP models to characterize the bottom ionosphere and the Epstein model to characterize the top ionosphere, this model conforms to the distinct stratification of the actual ionosphere and can accurately reflect changes in ionospheric electron concentration. The algorithm is simple and easy to program. This solves the problems of related technologies such as high construction and operating costs, which cannot meet the needs of practical applications, and large errors, which make it difficult to meet the requirements of high-precision refraction error correction.

[0061] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0063] Figure 1 A flowchart of a method for obtaining electron density profiles and ionospheric parameters according to an embodiment of the present invention;

[0064] Figure 2 A flowchart of the working principle of a method for obtaining electron density profiles and ionospheric parameters according to an embodiment of the present invention;

[0065] Figure 3 A block diagram of an apparatus for acquiring electron density profiles and ionospheric parameters according to an embodiment of the present invention;

[0066] Figure 4 A flowchart of a method for obtaining electron density profiles and ionospheric parameters according to yet another embodiment of the present invention;

[0067] Figure 5 A flowchart of the working principle of a method for obtaining electron density profiles and ionospheric parameters according to yet another embodiment of the present invention;

[0068] Figure 6 A schematic diagram of the difference values ​​of various parameters of 24-hour data provided in accordance with another embodiment of the present invention;

[0069] Figure 7 A schematic block diagram of an optimal electron density profile provided according to yet another embodiment of the present invention;

[0070] Figure 8 A flowchart of the working principle of a method for obtaining electron density profiles and ionospheric parameters according to yet another embodiment of the present invention;

[0071] Figure 9 A block diagram of an apparatus for acquiring electron density profiles and ionospheric parameters according to yet another embodiment of the present invention;

[0072] Figure 10 A schematic structural diagram of an electronic device provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0073] The following describes embodiments of the present invention in detail, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and are not to be construed as limiting the present invention.

[0074] The following describes, with reference to the accompanying drawings, a method and apparatus for obtaining electron density profiles and ionospheric parameters according to an embodiment of the present invention. To address the issues mentioned in the background art above, such as being very expensive in construction and operating costs, unable to meet the needs of practical applications, and having large errors, making it difficult to meet the requirements of high-precision refraction error correction, the present invention provides a method for obtaining electron density profiles and ionospheric parameters. In this method, detection time and location information from target vertical TEC data can be input into a preset IRI model to construct first ionospheric parameters. Second ionospheric parameters are then constructed using the target vertical TEC data. Furthermore, a preset QPS model and a preset Epstein model are combined to obtain electron densities at different altitudes, and an electron density profile model is constructed. By using multiple QP models to characterize the bottom ionosphere and an Epstein model to characterize the top ionosphere, this method conforms to the distinct stratification of the actual ionosphere, can more accurately reflect changes in ionospheric electron concentration, and has a simple algorithm that is easy to program. This method thus addresses the issues of the related art, such as being very expensive in construction and operating costs, unable to meet the needs of practical applications, having large errors, and being difficult to meet the requirements of high-precision refraction error correction.

[0075] Specifically, Figure 1 The present invention provides a flowchart of a method for obtaining electron density profiles and ionospheric parameters according to an embodiment of the present invention.

[0076] like Figure 1 As shown, the method for obtaining the electron density profile and ionospheric parameters is applied in the model building stage, wherein the method includes the following steps:

[0077] In step S101, the detection time information and detection position information of the target vertical TEC data are input into a preset IRI model to obtain the first ionospheric parameters required for constructing an electron density profile model in the ionosphere.

[0078] It is understandable that, in the embodiment of the present invention, the detection time of the target vertical TEC data may be the universal time or other time, which may be specifically set by a person skilled in the art according to actual conditions, and the present invention does not impose any specific restrictions thereon; the detection position information may include, but is not limited to, the longitude and latitude information of the detection, and the present invention does not impose any specific restrictions thereon.

[0079] Furthermore, in an embodiment of the present invention, the first ionospheric parameter may include, but is not limited to: 、 、 、 、 、 、 、 The present invention does not impose any specific restrictions. is the bottom height of the ionosphere F2 layer, is the peak height of the ionosphere F2 layer, is the bottom height of the ionosphere F1 layer, is the critical frequency of the ionosphere F1 layer, is the peak height of the ionosphere F1 layer, is the critical frequency of the ionosphere E layer, is the peak height of the ionosphere E layer, is the height of the bottom of the ionosphere E layer

[0080] As a possible implementation method, the embodiment of the present invention can input the detection time information of the obtained target vertical TEC data, such as the universal time, and the detection position information, such as the longitude and latitude information of the detection, into a preset IRI model to calculate the first ionospheric parameters required for constructing the electron density profile model, such as 、 、 、 、 、 、 、 wait.

[0081] For example, the detection time of the target vertical TEC data in the embodiment of the present invention is XX year XX month XX day XX hour XX minute, and the detection position is XX degrees east longitude and XX degrees north latitude. Furthermore, the embodiment of the present invention inputs the three parameters of detection time, detection longitude, and detection latitude into a preset IRI model to calculate the first ionospheric parameters, which are: 、 、 、 、 、 、 、 .

[0082] In step S102, the target vertical TEC data is used to calculate the initial ionospheric F2 layer critical frequency to obtain the second ionospheric parameter required for constructing the electron density profile model. The expression of the ionospheric F2 layer critical frequency can be, but is not limited to,:

[0083] ,

[0084] in, is the critical frequency of the ionosphere F2 layer, in MHz, For actual measurement , the unit is TECU, It is the experience value related to the month, in km.

[0085] It can be understood that the second ionospheric parameter in the embodiment of the present invention can be understood as the critical frequency of the ionosphere F2 layer.

[0086] In actual implementation, the embodiment of the present invention can calculate the initial ionospheric F2 layer critical frequency based on the target vertical TEC data and use it as the second ionospheric parameter required for constructing the electron density profile model. The expression of the ionospheric F2 layer critical frequency can be, but is not limited to,:

[0087] , (1)

[0088] in, is the critical frequency of the ionosphere F2 layer, in MHz, For actual measurement , the unit is TECU (1TECU= electrons / square meter), It is the experience value related to the month, in km.

[0089] Furthermore, in an embodiment of the present invention, The expression can be, but is not limited to:

[0090] , (2)

[0091] in, For detection The month of.

[0092] For example, in the embodiment of the present invention, the satellite altitude is 2000 km, the target vertical TEC is 9.58 TECU, and the critical frequency of the ionosphere F2 layer is calculated by formula (1) and formula (2), where: The value of is determined by the month in which the target vertical TEC is obtained. For example, if the month is January, , and substitute it into formula (2), and then we can get , and then substitute it into formula (1) to calculate the critical frequency of the initial ionospheric F2 layer.

[0093] In step S103, the first ionospheric parameter and the second ionospheric parameter are input into a preset QPS model and a preset Epstein model to obtain electron densities at different heights in the ionosphere.

[0094] It can be understood that, in the embodiment of the present invention, the preset QPS model is used to calculate the electron concentration in the bottom ionosphere, and the preset Epstein model is used to calculate the electron concentration in the top ionosphere.

[0095] It will be understood by those skilled in the art that, in an embodiment of the present invention, when the satellite altitude is determined, the first ionospheric parameter and the second ionospheric parameter can be input into a preset QPS model and a preset Epstein model, thereby obtaining the electron density at different altitudes and constructing an electron density profile model.

[0096] Exemplarily, in an embodiment of the present invention, the satellite altitude is taken as 2000 km, and the first ionospheric parameter, the second ionospheric parameter and the satellite altitude are input into a preset QPS model and a preset Epstein model to obtain electron density at different altitudes and construct an electron density profile model.

[0097] Optionally, in one embodiment of the present invention, the first ionosphere parameter and the second ionosphere parameter are input into a preset QPS model and a preset Epstein model to obtain electron densities at different heights in the ionosphere, including: calculating a first electron density of the E layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and a forward QP model of the E layer in the preset QPS model; calculating a second electron density of the connecting layer between the E layer and the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and a reverse QP model of the connecting layer between the E layer and the F1 layer in the preset QPS model; calculating the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and the forward QP model of the F1 layer in the preset QPS model. The third electron density of the F1 layer in the ionosphere is calculated; the fourth electron density of the connecting layer between the F1 layer and the F2 layer in the ionosphere is calculated based on the first ionosphere parameter, the second ionosphere parameter, and the reverse QP model of the connecting layer between the F1 layer and the F2 layer in the preset QPS model; the fifth electron density of the F2 layer in the ionosphere is calculated based on the first ionosphere parameter, the second ionosphere parameter, and the forward QP model of the F2 layer in the preset QPS model; the sixth electron density at other heights in the ionosphere is calculated based on the first ionosphere parameter, the second ionosphere parameter, and the preset Epstein model; the electron density is obtained based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density, and / or the sixth electron density. Wherein, the expression of the first electron density can be, but is not limited to,:

[0098] ,

[0099] The expression of the second electron density can be, but is not limited to:

[0100] ,

[0101] The expression of the third electron density can be, but is not limited to:

[0102] ,

[0103] The expression of the fourth electron density can be, but is not limited to:

[0104] ,

[0105] The expression of the fifth electron density can be, but is not limited to,:

[0106] ,

[0107] The expression of the sixth electron density can be, but is not limited to,:

[0108] ,

[0109] in, is the peak value of the electron density of the E layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density in the E layer, For any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak of the electron density of the connecting layer between the E layer and the F1 layer, is the electron density at any height of the connecting layer between the E layer and the F1 layer, is the peak electron density of the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between F1 and F2 layers, No actual physical meaning. is the height of the Earth's center where the electron density peak of the F1 and F2 layers connect. is the electron density at any height of the connecting layer between F1 and F2 layers, is the peak value of the electron density of the F2 layer, No actual physical meaning. is the height of the Earth's center at the peak of the electron density in the F2 layer, is the electron density at any height of the F2 layer, The top ionosphere The electron concentration at height, is the maximum electron concentration, for At height, is the height of the ionosphere relative to the ground, is the atmospheric height, is the hyperbolic secant function.

[0110] It is understood that the bottom ionosphere in the embodiment of the present invention is characterized by a preset QPS model. The E layer, F1 layer, and F2 layer are represented by the forward QP model, while the connection layer between the E layer and the F1 layer, and the connection layer between the F1 layer and the F2 layer, are represented by the reverse QP model. From bottom to top, the QP model expressions for each layer are:

[0111] (a) The expression of the E layer, i.e. the first electron density, can be, but is not limited to,:

[0112] , (3)

[0113] (b) The connection layer between the E layer and the F1 layer, i.e., the expression of the second electron density can be, but is not limited to,:

[0114] , (4)

[0115] (c) The expression of F1 layer, i.e. the third electron density, can be, but is not limited to,:

[0116] , (5)

[0117] (d) The connection layer of the F1 layer and the F2 layer, that is, the expression of the fourth electron density can be, but is not limited to,:

[0118] , (6)

[0119] (e) The expression of F2 layer, i.e. the fifth electron density, can be, but is not limited to,:

[0120] , (7)

[0121] Furthermore, in an embodiment of the present invention,

[0122] , (8)

[0123] , (9)

[0124] , (10)

[0125] , (11)

[0126] , (12)

[0127] , (13)

[0128] , (14)

[0129] , (15)

[0130] , (16)

[0131] , (17)

[0132] Furthermore, the embodiment of the present invention can calculate the electron concentration profile of the ionosphere according to the preset QPS model. Nine parameters are required, which may be, but are not limited to: (F2 layer peak electron concentration), (the distance between the peak electron concentration of the F2 layer and the center of the earth), (The half-thickness of the F2 layer is the distance between the peak electron concentration of the F2 layer and the minimum electron concentration of the F2 layer, and the same applies below); (F1 layer peak electron concentration), (the distance between the peak electron concentration of the F1 layer and the center of the earth), (half thickness of F1 layer); (E-layer peak electron concentration), (the distance between the peak electron concentration of the E layer and the center of the earth), (E layer half thickness).

[0133] Furthermore, in an embodiment of the present invention, 、 and The expression can be, but is not limited to:

[0134] , (18)

[0135] , (19)

[0136] , (20)

[0137] in, is the radius of the earth, which is 6370 km. 、 、 Obtained from the above.

[0138] Furthermore, in an embodiment of the present invention, 、 and The expression can be, but is not limited to:

[0139] ,(twenty one)

[0140] ,(twenty two)

[0141] ,(twenty three)

[0142] in, 、 、 、 、 、 Obtained from the above.

[0143] Furthermore, in the embodiment of the present invention, the peak electron concentration of the F2 layer is related to the critical frequency of the F2 layer, and its general expression can be, but is not limited to,:

[0144] ,(twenty four)

[0145] in, is the electron charge, which is C, is the free space dielectric constant, which is F / m, is the mass of the electron, and its value is kg, is the critical frequency, in Hz, Indicates the electron concentration in m-3.

[0146] Furthermore, the embodiment of the present invention can calculate 、 and , its expression can be but not limited to:

[0147] , (25)

[0148] , (26)

[0149] , (27)

[0150] in, 、 and Obtained from the above.

[0151] In addition, it should be noted that, in the embodiment of the present invention, the top ionosphere is characterized by a preset Epstein model, which can be used to calculate the sixth electron density, and its expression can be, but is not limited to,:

[0152] , (28)

[0153] Those skilled in the art can understand that, in an embodiment of the present invention, the forward QP model of the E layer in the preset QPS model can be used to calculate the first electron density, the reverse QP model of the connecting layer between the E layer and the F1 layer can be used to calculate the second electron density, the forward QP model of the F1 layer can be used to calculate the third electron density, the reverse QP model of the connecting layer between the F1 layer and the F2 layer can be used to calculate the fourth electron density, the forward QP model of the F2 layer can be used to calculate the fifth electron density, and the preset Epstein model can be used to calculate the sixth electron density, thereby obtaining the electron density of the ionosphere.

[0154] In step S104, an electron density profile model is constructed based on the electron density at different heights. The expression of the electron density profile model can be, but is not limited to:

[0155] ,

[0156] in, is the bottom height of layer E, is the peak electron concentration height of the F2 layer, is the height of the top of the ionosphere, In the bottom ionosphere The electron concentration at height, The top ionosphere The electron concentration at height, is the height of the ionosphere relative to the ground.

[0157] In actual implementation, the embodiment of the present invention can perform integral calculations on the electron density at different heights to construct an electron density profile model. The expression of the electron density profile model can be, but is not limited to:

[0158] , (29)

[0159] For example, the embodiment of the present invention can construct an electron density profile model by performing integral calculation on the electron density. The expression of the electron density profile model can be, but is not limited to:

[0160] , (30)

[0161] in, is the height of the top of the ionosphere, In the bottom ionosphere The electron concentration at height, The top ionosphere The electron concentration at a certain height.

[0162] in, Figure 2 The present invention provides a flowchart of the working principle of a method for obtaining electron density profiles and ionospheric parameters according to an embodiment of the present invention.

[0163] Step S201: Acquire detection time information and detection position information of target vertical TEC data.

[0164] Step S202: Determine a preset IRI model.

[0165] Step S203: constructing first ionospheric parameters using target vertical TEC data and a preset IRI model.

[0166] Step S204: Determine the satellite altitude.

[0167] Step S205: Calculate the initial ionospheric F2 layer critical frequency using the target vertical TEC data to construct the second ionospheric parameters.

[0168] Step S206: Calculate the electron density at different heights using a preset QPS model and a preset Epstein model.

[0169] Step S207: performing integral calculation on the electron density at different heights to construct an electron density profile model.

[0170] It can be understood that, in the embodiment of the present invention, the two parameters of the detection time and the detection position in the target vertical TEC data can be first input, and the first ionospheric parameter of the ionosphere can be obtained according to the preset IRI model; then, the target vertical TEC data can be used to calculate the critical frequency of the initial ionospheric F2 layer to obtain the second ionospheric parameter of the ionosphere; then, the first ionospheric parameter, the second ionospheric parameter and the satellite altitude are substituted into the preset QPS model and the preset Epstein model to calculate the electron density at different altitudes, thereby completing the construction of the electron density profile model.

[0171] According to the method for obtaining electron density profiles and ionospheric parameters proposed in an embodiment of the present invention, the detection time and location information in the target vertical TEC data can be input into a preset IRI model to construct a first ionospheric parameter. The target vertical TEC data is then used to construct a second ionospheric parameter. Furthermore, the electron density at different altitudes is obtained by combining the preset QPS model and the preset Epstein model, and an electron density profile model is constructed. By using multiple QP models to characterize the bottom ionosphere and the Epstein model to characterize the top ionosphere, this method conforms to the characteristic of the actual ionosphere with relatively obvious stratification, can more accurately reflect the changes in ionospheric electron concentration, and has a simple algorithm that is easy to program. This solves the problems of related technologies such as high construction and operating costs, which cannot meet the needs of actual applications, and large errors, which make it difficult to meet the requirements of high-precision refraction error correction.

[0172] Next, a device for acquiring electron density profile and ionospheric parameters according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0173] Figure 3 A block diagram of an apparatus for acquiring electron density profiles and ionospheric parameters according to an embodiment of the present invention is provided.

[0174] like Figure 3 As shown, the electron density profile and ionospheric parameter acquisition device 30 is applied to the model construction stage, wherein the acquisition device 30 includes: a first acquisition module 301, a first generation module 302, a second generation module 303 and a construction module 304.

[0175] The first acquisition module 301 is used to input the detection time information and detection position information of the target vertical TEC data into a preset IRI model to obtain the first ionospheric parameters required for constructing an electron density profile model in the ionosphere.

[0176] The first generating module 302 is used to calculate the initial ionospheric F2 layer critical frequency using the target vertical TEC data to obtain the second ionospheric parameters required for constructing the electron density profile model.

[0177] The second generating module 303 is configured to input the first ionospheric parameter and the second ionospheric parameter into a preset QPS model and a preset Epstein model to obtain electron densities at different heights in the ionosphere.

[0178] The construction module 304 is used to construct an electron density profile model based on the electron densities at different heights.

[0179] Optionally, in one embodiment of the present invention, the second generating module 303 includes: a first calculating unit, a second calculating unit, a third calculating unit, a fourth calculating unit, a fifth calculating unit, a sixth calculating unit and a generating unit.

[0180] The first calculation unit is used to calculate the first electron density of the E layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the forward QP model of the E layer in the preset QPS model.

[0181] The second calculation unit is used to calculate the second electron density of the connecting layer between the E layer and the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the inverse QP model of the connecting layer between the E layer and the F1 layer in the preset QPS model.

[0182] The third calculation unit is used to calculate a third electron density of the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the forward QP model of the F1 layer in the preset QPS model.

[0183] The fourth calculation unit is used to calculate the fourth electron density of the connecting layer between the F1 layer and the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the inverse QP model of the connecting layer between the F1 layer and the F2 layer in the preset QPS model.

[0184] The fifth calculation unit is used to calculate the fifth electron density of the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the forward QP model of the F2 layer in the preset QPS model.

[0185] The sixth calculation unit is used to calculate the sixth electron density at other heights in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter and the preset Epstein model.

[0186] A generating unit is configured to obtain an electron density based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density and / or the sixth electron density.

[0187] Optionally, in one embodiment of the present invention,

[0188] The expression of the first electron density can be, but is not limited to:

[0189] ,

[0190] The expression of the second electron density can be, but is not limited to:

[0191] ,

[0192] The expression of the third electron density can be, but is not limited to:

[0193] ,

[0194] The expression of the fourth electron density can be, but is not limited to:

[0195] ,

[0196] The expression of the fifth electron density can be, but is not limited to,:

[0197] ,

[0198] The expression of the sixth electron density can be, but is not limited to,:

[0199] ,

[0200] in, is the peak value of the electron density of the E layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density in the E layer, For any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak of the electron density of the connecting layer between the E layer and the F1 layer, is the electron density at any height of the connecting layer between the E layer and the F1 layer, is the peak electron density of the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between F1 and F2 layers, No actual physical meaning. is the height of the Earth's center where the electron density peak of the F1 and F2 layers connect. is the electron density at any height of the connecting layer between F1 and F2 layers, is the peak value of the electron density of the F2 layer, No actual physical meaning. is the height of the Earth's center at the peak of the electron density in the F2 layer, is the electron density at any height of the F2 layer, In the top ionosphere The electron concentration at height, is the maximum electron concentration, for At height, is the height of the ionosphere relative to the ground, is the atmospheric height, is the hyperbolic secant function.

[0201] Optionally, in one embodiment of the present invention, the expression of the critical frequency of the ionosphere F2 layer may be, but is not limited to,:

[0202] ,

[0203] in, is the critical frequency of the ionosphere F2 layer, in MHz, For actual measurement , the unit is TECU, It is the experience value related to the month, in km.

[0204] Optionally, in one embodiment of the present invention, the expression of the electron density profile model may be, but is not limited to:

[0205] ,

[0206] in, is the bottom height of layer E, is the peak electron concentration height of the F2 layer, is the height of the top of the ionosphere, In the bottom ionosphere The electron concentration at height, In the top ionosphere The electron concentration at height, is the height of the ionosphere relative to the ground.

[0207] It should be noted that the above explanation of the embodiment of the method for obtaining the electron density profile and ionospheric parameters is also applicable to the device for obtaining the electron density profile and ionospheric parameters of this embodiment, and will not be repeated here.

[0208] According to an embodiment of the present invention, the device for acquiring electron density profiles and ionospheric parameters can input the detection time and location information from the target vertical TEC data into a preset IRI model to construct a first ionospheric parameter. The target vertical TEC data is then used to construct a second ionospheric parameter. Furthermore, the device combines a preset QPS model with a preset Epstein model to obtain electron density at different altitudes and construct an electron density profile model. By using multiple QP models to characterize the bottom ionosphere and an Epstein model to characterize the top ionosphere, the device conforms to the distinct stratification of the actual ionosphere and can accurately reflect changes in ionospheric electron concentration. The algorithm is simple and easy to program. This solves the problems of related technologies such as high construction and operating costs, which cannot meet the needs of practical applications, and large errors, making it difficult to meet the requirements of high-precision refraction error correction.

[0209] The above embodiment describes the model building stage. The following describes an embodiment of the model application stage.

[0210] Figure 4 The present invention provides a flowchart of a method for obtaining electron density profiles and ionospheric parameters according to another embodiment of the present invention.

[0211] like Figure 4 As shown, the method for obtaining the electron density profile and ionospheric parameters is applied in the model application stage, wherein the method includes the following steps:

[0212] In step S401 , actual vertical TEC data in the ionosphere is acquired.

[0213] In some embodiments, the embodiments of the present invention may first obtain actual vertical TEC data in the ionosphere, and obtain detection time information and detection position information of the data.

[0214] In step S402, predicted vertical TEC data in the ionosphere is obtained based on actual vertical TEC data and a pre-constructed electron density profile model, wherein the pre-constructed electron density profile model is obtained from electron densities at different heights.

[0215] In some embodiments, embodiments of the present invention can obtain the first actual ionospheric parameter and the second actual ionospheric parameter required for a pre-constructed electron density profile model based on actual vertical TEC data, and input the first actual ionospheric parameter and the second actual ionospheric parameter into the pre-constructed electron density profile model, thereby calculating and predicting vertical TEC data.

[0216] For example, the embodiment of the present invention may be combined with formula (29) or formula (30) to calculate the predicted vertical TEC data.

[0217] In step S403, an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data is calculated.

[0218] In some embodiments, the present invention can calculate an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data, which can be expressed as, but not limited to, .

[0219] In step S404, based on the initial vertical difference, the ionospheric F2 layer peak height in the first ionospheric parameter and the ionospheric F2 layer critical frequency in the second ionospheric parameter are updated according to a preset update condition until a vertical difference that meets the preset difference condition is obtained, and the final electron density in the ionosphere, the final first ionospheric parameter, and the final second ionospheric parameter are determined using the vertical difference. The expression for the vertical difference may be, but is not limited to,:

[0220] ,

[0221] in, is the actual vertical TEC data, To predict vertical TEC data, is an absolute value.

[0222] In some embodiments, embodiments of the present invention can update the ionospheric F2 layer peak height and ionospheric F2 layer critical frequency based on the initial vertical difference under certain conditions, thereby obtaining a vertical difference that satisfies certain difference conditions, thereby determining the final electron density in the ionosphere, the final first ionospheric parameter, and the final second ionospheric parameter. The certain conditions and certain difference conditions can be set by those skilled in the art based on actual conditions and are not specifically limited by the present invention. The expression for the vertical difference can be, but is not limited to,:

[0223] , (31)

[0224] in, is the actual vertical TEC data, the unit is TECU, To predict vertical TEC data, the unit is TECU, is an absolute value.

[0225] For example, the embodiment of the present invention can be used to adjust the frequency of the signal within the range of ±2 MHz with a step size of 0.1 MHz. Traverse with a step length of 5km within the range of ±25km Traverse. 、 Repeat steps S402 and S403 with the other seven ionospheric parameters to determine the vertical difference The minimum result is obtained, thereby obtaining the final electron density, the final first ionosphere parameter and the final second ionosphere parameter.

[0226] The working principle of the method for obtaining electron density profile and ionospheric parameters proposed in the embodiment of the present invention is introduced below with reference to a specific embodiment.

[0227] Figure 5 The present invention is a flowchart illustrating the working principle of a method for obtaining electron density profiles and ionospheric parameters according to another embodiment of the present invention.

[0228] Step S501: Acquire actual vertical TEC data.

[0229] Step S502: inputting into a pre-built electron density profile model to obtain predicted vertical TEC data.

[0230] Step S503: Calculate the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data.

[0231] Step S504: updating the ionospheric F2 layer peak height and the ionospheric F2 layer critical frequency until the vertical difference meets a certain difference condition.

[0232] Step S505: Determine the final electron density, the final first ionosphere parameter, and the final second ionosphere parameter.

[0233] It can be understood that the embodiment of the present invention can calculate and predict vertical TEC data through a pre-constructed electron density profile model, and compare the actual vertical TEC data with the predicted vertical TEC data to obtain a vertical difference; then continuously adjust the first actual ionospheric parameter and the second actual ionospheric parameter, and update the electron density profile model, recalculate the predicted vertical TEC data, and compare it with the actual vertical TEC data, and finally select the electron density profile and ionospheric parameter with the smallest vertical difference as the final result.

[0234] In addition, in order to verify the performance of the method for obtaining electron density profiles and ionospheric parameters, the embodiment of the present invention takes 24 hours of data per day, and forms a group of data per hour. Optimal value, Optimal value, The optimal value is compared with the corresponding model parameters, and the result diagram is as follows Figure 6-Figure 7 shown.

[0235] Furthermore, in an embodiment of the present invention, obtaining Optimal value, Optimal value, The optimal value process is:

[0236] Step S801: Acquire actual vertical TEC data.

[0237] In the embodiment of the present invention, the detection time of the actual vertical TEC data is XX year XX month XX day XX hour XX minute, and the detection position is XX degrees east longitude and XX degrees north latitude.

[0238] Step S802: Input the detection time and detection position into a preset IRI model to calculate eight ionospheric parameters.

[0239] In this embodiment of the present invention, the eight ionospheric parameters may be, but are not limited to, the following: 、 、 、 、 、 、 、 .

[0240] Step S803: Calculate the initial , as the ninth ionospheric parameter.

[0241] Step S804: Taking the satellite altitude as 2000 km, nine ionospheric parameters and the satellite altitude are input into the preset QPS model and the preset Epstein model to calculate the electron density at different altitudes.

[0242] Step S805: performing integral calculation on the electron density at different heights to obtain an electron density profile model.

[0243] Step S806: Calculate and predict vertical TEC data using the electron density profile model.

[0244] Step S807: Calculate the error between the actual vertical TEC data and the predicted vertical TEC data to obtain a vertical difference.

[0245] Step S808: With a step size of 0.1 MHz, the Traverse with a step length of 5km within the range of ±25km Traverse and update parameters and . Re-execute step S804 to step S807 and record the result with the smaller vertical difference.

[0246] Step S809: taking the electron density and ionospheric parameters with the smallest vertical difference as the final result.

[0247] According to the method for obtaining electron density profiles and ionospheric parameters proposed in an embodiment of the present invention, actual vertical TEC data can be input into a pre-constructed electron density profile model to obtain predicted vertical TEC data. The vertical difference between the two is then calculated. The ionospheric F2 layer peak height and the ionospheric F2 layer critical frequency are updated according to certain update conditions, thereby obtaining a vertical difference that satisfies certain difference conditions, thereby determining the final electron density in the ionosphere, the final first ionospheric parameters, and the final second ionospheric parameters. The pre-constructed electron density profile model conforms to the characteristics of the actual ionosphere with relatively obvious stratification, can more accurately reflect the changes in ionospheric electron concentration, and has a simple algorithm and is easy to program. This solves the problems of related technologies such as high construction and operating costs, which cannot meet the needs of actual applications, and large errors, which make it difficult to meet the requirements of high-precision refraction error correction.

[0248] Next, a device for acquiring electron density profile and ionospheric parameters according to an embodiment of the present invention will be described with reference to the accompanying drawings.

[0249] Figure 9 A block diagram of an apparatus for acquiring electron density profiles and ionospheric parameters according to yet another embodiment of the present invention.

[0250] like Figure 9 As shown, the electron density profile and ionospheric parameter acquisition device 90 is applied in the model application stage, wherein the acquisition device 90 includes: a second acquisition module 901, a third generation module 902, a calculation module 903 and a determination module 904.

[0251] The second acquisition module 901 is used to acquire actual vertical TEC data in the ionosphere.

[0252] The third generating module 902 is configured to obtain predicted vertical TEC data in the ionosphere based on actual vertical TEC data and a pre-built electron density profile model, wherein the pre-built electron density profile model is obtained from electron densities at different heights.

[0253] The calculation module 903 is used to calculate the initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data.

[0254] Determination module 904 is configured to update, based on the initial vertical difference, the ionospheric F2 layer peak height in the first ionospheric parameter and the ionospheric F2 layer critical frequency in the second ionospheric parameter according to a preset update condition until a vertical difference that satisfies the preset difference condition is obtained, and determine the final electron density in the ionosphere, the final first ionospheric parameter, and the final second ionospheric parameter using the vertical difference.

[0255] Optionally, in one embodiment of the present invention, the expression of the vertical difference may be, but is not limited to,:

[0256] ,

[0257] in, is the actual vertical TEC data, To predict vertical TEC data, is an absolute value.

[0258] It should be noted that the above explanation of the embodiment of the method for obtaining the electron density profile and ionospheric parameters is also applicable to the device for obtaining the electron density profile and ionospheric parameters of this embodiment, and will not be repeated here.

[0259] According to the device for obtaining electron density profiles and ionospheric parameters proposed in an embodiment of the present invention, actual vertical TEC data can be input into a pre-constructed electron density profile model to obtain predicted vertical TEC data. The vertical difference between the two is then calculated. The ionospheric F2 layer peak height and the ionospheric F2 layer critical frequency are updated according to certain update conditions, thereby obtaining a vertical difference that satisfies certain difference conditions, thereby determining the final electron density, final first ionospheric parameters, and final second ionospheric parameters in the ionosphere. The pre-constructed electron density profile model conforms to the characteristics of the actual ionosphere with relatively obvious stratification, can more accurately reflect the changes in ionospheric electron concentration, and has a simple algorithm and is easy to program. This solves the problems of related technologies such as high construction and operating costs, which cannot meet the needs of actual applications, and large errors, which make it difficult to meet the requirements of high-precision refraction error correction.

[0260] Figure 10 This is a schematic diagram of the structure of an electronic device provided according to an embodiment of the present invention. The electronic device may include:

[0261] A memory 1001 , a processor 1002 , and a computer program stored in the memory 1001 and executable on the processor 1002 .

[0262] When the processor 1002 executes the program, it implements the method for obtaining the electron density profile and ionospheric parameters provided in the above embodiment.

[0263] Furthermore, the electronic device further includes:

[0264] The communication interface 1003 is used for communication between the memory 1001 and the processor 1002 .

[0265] The memory 1001 is used to store computer programs that can be run on the processor 1002 .

[0266] The memory 1001 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory), such as at least one disk memory.

[0267] If the memory 1001, processor 1002, and communication interface 1003 are implemented independently, the communication interface 1003, memory 1001, and processor 1002 can be connected to each other via a bus and communicate with each other. The bus can be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, or an Extended Industry Standard Architecture (EISA) bus. Buses can be divided into address buses, data buses, control buses, etc. For ease of representation, Figure 10 Only one thick line is used in the diagram, but this does not mean that there is only one bus or one type of bus.

[0268] Optionally, in a specific implementation, if the memory 1001, the processor 1002 and the communication interface 1003 are integrated on a chip, the memory 1001, the processor 1002 and the communication interface 1003 can communicate with each other through an internal interface.

[0269] The processor 1002 may be a central processing unit (CPU), an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention.

[0270] An embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-mentioned method for obtaining electron density profiles and ionospheric parameters.

[0271] An embodiment of the present invention further provides a computer program product, including a computer program, which, when executed, implements the above-mentioned method for obtaining electron density profiles and ionospheric parameters.

[0272] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or N embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0273] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "N" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0274] Any process or method description in a flowchart or otherwise described herein may be understood to represent a module, segment or portion of code comprising one or N executable instructions for implementing a custom logical function or step of a process, and the scope of the preferred embodiments of the present invention includes alternative implementations in which functions may be performed out of the order shown or discussed, including performing functions in a substantially simultaneous manner or in the reverse order depending on the functions involved, which should be understood by those skilled in the art to which the embodiments of the present invention pertain.

[0275] The logic and / or steps represented in flow diagrams or otherwise described herein, for example, can be considered as a sequence of executable instructions, and can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For purposes of this specification, a "computer-readable medium" can be any apparatus that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. The computer-readable medium can be a product of the manufacturing and / or processing. The computer-readable medium can include, but is not limited to, the following: an electronic connection (an electronic device with one or N wires), a portable computer diskette (a magnetic device), a RAM (random access memory), a ROM (read-only memory), an EPROM (erasable programmable ROM) or a Flash memory, an optical fiber, and a portable CD ROM. In addition, the computer-readable medium can even be paper or other suitable medium upon which the program can be printed, as the program can be electronically captured, via the optically scanning of the paper or other medium, then compiled, interpreted, or otherwise processed in a suitable manner, if necessary, and stored in the computer memory.

[0276] It should be understood that aspects of the application can be implemented in hardware, software, firmware or combinations thereof. In the above embodiments, the N steps or methods can be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented in hardware and in another embodiment, the hardware can be implemented using any or a combination of the following technologies, which are all well known in the art: a discrete logic circuit having logic gates for implementing logic functions upon data signals, an application specific integrated circuit having appropriate combinational logic gates, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0277] Those of skill in the art could readily implement the above described example methods with all or a portion of the disclosed steps carried out by a program for use with or in connection with the relevant hardware. Such programs can be stored in any computer readable medium, which can be implemented as a computer program product, including a computer-readable storage medium having stored, thereon, the program code.

[0278] In addition, the functional units in the various embodiments of the present invention may be integrated into a single processing module, or each unit may exist physically separately, or two or more units may be integrated into a single module. The aforementioned integrated modules may be implemented in the form of hardware or in the form of software functional modules. If the integrated modules are implemented in the form of software functional modules and sold or used as independent products, they may also be stored in a computer-readable storage medium.

[0279] The storage medium mentioned above may be a read-only memory, a magnetic disk, or an optical disk, etc. Although the embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and are not to be construed as limiting the present invention. Persons skilled in the art may make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present invention.

Claims

1. A method for obtaining electron density profiles and ionospheric parameters, characterized in that: Applied to the model building stage, wherein the method comprises the following steps: Input the detection time information and detection position information of the target vertical total electron content (TEC) data into the preset International Ionospheric Reference Model (IRI) model to obtain the first ionospheric parameters required for constructing an electron density profile model in the ionosphere; Calculating the initial ionospheric F2 layer critical frequency using the target vertical TEC data to obtain the second ionospheric parameters required for constructing the electron density profile model; Inputting the first ionospheric parameter and the second ionospheric parameter into a preset query per second (QPS) model and a preset Epstein model to obtain electron densities at different heights in the ionosphere; constructing the electron density profile model based on the electron densities at different altitudes, calculating predicted target vertical TEC data in the ionosphere using the electron density profile model, calculating an initial target vertical difference between the target vertical TEC data and the predicted target vertical TEC data based on the target vertical TEC data and the predicted target vertical TEC data, and determining a target final electron density profile, a target final first ionosphere parameter, and a target final second ionosphere parameter in the ionosphere using the initial target vertical difference; The determining of the target final electron density profile, the target final first ionosphere parameter, and the target final second ionosphere parameter in the ionosphere by using the initial target vertical difference comprises: determining, based on the target vertical TEC data, an initial ionospheric F2 layer peak height in the first ionospheric parameter; Based on the initial ionospheric F2 layer peak height and the initial ionospheric F2 layer critical frequency, the ionospheric F2 layer peak height and the ionospheric F2 layer critical frequency are updated according to a preset update condition until a target vertical difference that meets a preset difference condition is obtained, and the target final electron density profile, the target final first ionospheric parameter, and the target final second ionospheric parameter are determined using the target vertical difference.

2. The method according to claim 1, characterized in that Inputting the first ionospheric parameter and the second ionospheric parameter into a preset QPS model and a preset Epstein model to obtain electron densities at different heights in the ionosphere includes: Calculating a first electron density of an E layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and a forward QP model of the E layer in the preset QPS model; Calculating a second electron density of a connecting layer between the E layer and the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and an inverse QP model of a connecting layer between the E layer and the F1 layer in the preset QPS model; Calculating a third electron density of the F1 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and a forward QP model of the F1 layer in the preset QPS model; Calculating a fourth electron density of a connecting layer between the F1 layer and the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and an inverse QP model of a connecting layer between the F1 layer and the F2 layer in the preset QPS model; Calculating a fifth electron density of the F2 layer in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and a forward QP model of the F2 layer in the preset QPS model; Calculating a sixth electron density at other altitudes in the ionosphere based on the first ionosphere parameter, the second ionosphere parameter, and the preset Epstein model; The electron density is obtained based on the first electron density, the second electron density, the third electron density, the fourth electron density, the fifth electron density and / or the sixth electron density.

3. The method according to claim 2, characterized in that in, The expression of the first electron density is: ， The expression of the second electron density is: ， The expression of the third electron density is: ， The expression of the fourth electron density is: ， The expression of the fifth electron density is: ， The expression of the sixth electron density is: ， in, is the peak value of the electron density of the E layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density in the E layer, For any height, is the electron density of the E layer at any height, is the peak electron density of the connecting layer between the E layer and the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak of the electron density of the connecting layer between the E layer and the F1 layer, is the electron density at any height of the connecting layer between the E layer and the F1 layer, is the peak electron density of the F1 layer, No actual physical meaning. is the distance from the center of the Earth to the peak value of the electron density of the F1 layer, is the electron density of the F1 layer at any height, is the peak electron density of the connecting layer between F1 and F2 layers, No actual physical meaning. is the height of the Earth's center where the electron density peak of the F1 and F2 layers connect. is the electron density at any height of the connecting layer between F1 and F2 layers, is the peak value of the electron density of the F2 layer, No actual physical meaning. is the height of the Earth's center at the peak of the electron density in the F2 layer, is the electron density at any height of the F2 layer, In the top ionosphere The electron concentration at height, is the maximum electron concentration, for At height, is the height of the ionosphere relative to the ground, is the atmospheric height, is the hyperbolic secant function.

4. The method according to claim 1, wherein The expression of the critical frequency of the ionosphere F2 layer is: ， in, is the critical frequency of the ionosphere F2 layer, in MHz, For actual measurement , the unit is TECU, It is the experience value related to the month, in km.

5. The method according to claim 1, wherein The expression of the electron density profile model is: ， in, is the bottom height of layer E, is the peak electron concentration height of the F2 layer, is the height of the top of the ionosphere, In the bottom ionosphere The electron concentration at height, In the top ionosphere The electron concentration at height, is the height of the ionosphere relative to the ground.

6. A method for obtaining electron density profile and ionospheric parameters, characterized in that: The method for obtaining the electron density profile and ionospheric parameters according to any one of claims 1 to 5 is applied to the model application stage, wherein the method comprises the following steps: Obtain actual vertical TEC data in the ionosphere; Obtaining predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and a pre-constructed electron density profile model, wherein the pre-constructed electron density profile model is obtained from electron densities at different heights; Calculating an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; Based on the initial vertical difference, the ionospheric F2 layer peak height in the first ionospheric parameter and the ionospheric F2 layer critical frequency in the second ionospheric parameter are updated according to a preset update condition until a vertical difference that meets the preset difference condition is obtained, and the final electron density profile in the ionosphere, the final first ionospheric parameter, and the final second ionospheric parameter are determined using the vertical difference.

7. The method according to claim 6, characterized in that The expression of the vertical difference is: ， in, is the actual vertical TEC data, To predict vertical TEC data, is an absolute value.

8. A device for obtaining electron density profile and ionospheric parameters, characterized in that: The method for obtaining the electron density profile and ionospheric parameters according to any one of claims 1 to 5 is applied to the model building stage, wherein the device comprises: A first acquisition module is used to input the detection time information and detection position information of the target vertical TEC data into a preset IRI model to obtain the first ionospheric parameter required for constructing an electron density profile model in the ionosphere; A first generating module is used to calculate the initial ionospheric F2 layer critical frequency using the target vertical TEC data to obtain the second ionospheric parameters required to construct the electron density profile model; a second generating module, configured to input the first ionospheric parameter and the second ionospheric parameter into a preset QPS model and a preset Epstein model to obtain electron densities at different heights in the ionosphere; A construction module is used to construct the electron density profile model based on the electron densities at different heights.

9. A device for obtaining electron density profile and ionospheric parameters, characterized in that: The method for obtaining the electron density profile and ionospheric parameters according to any one of claims 1 to 5 is applied in the model application stage, wherein the device comprises: The second acquisition module is used to obtain actual vertical TEC data in the ionosphere; a third generating module, configured to obtain predicted vertical TEC data in the ionosphere based on the actual vertical TEC data and a pre-constructed electron density profile model, wherein the pre-constructed electron density profile model is obtained from electron densities at different heights; a calculation module, configured to calculate an initial vertical difference between the actual vertical TEC data and the predicted vertical TEC data; A determination module is configured to update, based on the initial vertical difference, the ionospheric F2 layer peak height in the first ionospheric parameter and the ionospheric F2 layer critical frequency in the second ionospheric parameter according to a preset update condition until a vertical difference that satisfies the preset difference condition is obtained, and use the vertical difference to determine a final electron density profile in the ionosphere, a final first ionospheric parameter, and a final second ionospheric parameter.

10. An electronic device, characterized in that: include: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for obtaining the electron density profile and ionospheric parameters according to any one of claims 1 to 5 or the method for obtaining the electron density profile and ionospheric parameters according to any one of claims 6 to 7.

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