Power switch module

Abstract

The invention discloses a power switch module, the power switch module comprises a substrate and a bridge arm, the bridge arm is arranged on the substrate, the bridge arm comprises an insulated gate bipolar transistor and a field effect transistor, and the insulated gate bipolar transistor and the field effect transistor are connected in parallel; wherein the insulated gate bipolar transistor is made of a silicon-based material, and the field effect transistor is made of a silicon carbide material. The Si IGBT serves as a main power switch module device, the output capacity of the power module is guaranteed, the SiC MOSFET serves as an auxiliary of the Si IGBT, and energy loss in the circuit on-off process is reduced. Through the main-auxiliary synergistic effect of the Si IGBTs and the SiC MOSFETs, the overall power density and the working efficiency of the power switch module can be improved, the stability of a system can be ensured, the production cost and the occupied space of the power switch module can be reduced under the condition that the power requirement is met, and the requirements for miniaturization and light weight of the power switch module are met.

Description

Technical Field

[0001] The present invention relates to the technical field of power switches, and in particular to a power switch module. Background Art

[0002] At present, the insulated gate bipolar transistor (IGBT) based on silicon (Si) has become the core component of the power switch module because of its characteristics of being able to stably conduct under high current demand conditions, providing strong power support for the system and ensuring the stable operation of high-power equipment. It is widely used in the field of electric vehicles and is the core component of the drive system and other systems in electric vehicles.

[0003] However, Si IGBT chips are limited by the properties of their materials, which makes them more restricted in high-power application scenarios. Summary of the Invention

[0004] The embodiments of the present invention provide a power switch module to solve at least one of the above-mentioned technical problems.

[0005] The present application proposes a power switch module, comprising: a substrate; a bridge arm, wherein the bridge arm is arranged on the substrate, the bridge arm comprises an insulated gate bipolar transistor and a field effect transistor, and the insulated gate bipolar transistor and the field effect transistor are connected in parallel; wherein the insulated gate bipolar transistor is composed of a silicon-based material, and the field effect transistor is composed of a silicon carbide material.

[0006] The present application also provides an electric motor, comprising the power switch module described in any one of the embodiments.

[0007] The power switch module of the embodiment of the present application is provided with a bridge arm on a substrate, the bridge arm including a Si IGBT and a SiC MOSFET, and the Si IGBT and SiC MOSFET are connected in parallel. For example, the low switching loss and fast response to switching signals (fast switching speed) characteristics of the SiC MOSFET are utilized to reduce the energy waste during each switching process of the power switch module in the switching scenario. For another example, the current of the parallel circuit is distributed according to the resistance of each branch (more current flows to the branch with smaller on-resistance), and based on the characteristics of the Si IGBT with strong current carrying capacity and stable conduction of large current (low on-state voltage drop), the power switch module can stably carry large current in the continuous conduction scenario, thereby improving the stability of the power switch module. In other words, the present application uses the Si IGBT as the main power switch module component to ensure the stability of the circuit conduction, and the SiC MOSFET is used as an auxiliary to the Si IGBT to reduce the energy loss during the circuit switching process. The main and auxiliary synergy of Si IGBT and SiC MOSFET can not only improve the overall power density and working efficiency of the power switch module and ensure the stability of the system, but also reduce the production cost and occupied space of the power switch module while meeting the power requirements, thus meeting the demand for miniaturization and lightweight power switch modules.

[0008] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments with reference to the following drawings, in which:

[0010] Figure 1 is a topological diagram of a power switch module according to an embodiment of the present invention;

[0011] Figure 2 1 is a schematic structural diagram of a power switch module according to an embodiment of the present invention;

[0012] Figure 3 1 is a schematic structural diagram of a power switch module according to an embodiment of the present invention;

[0013] Figure 4 1 is a schematic structural diagram of a power switch module according to an embodiment of the present invention;

[0014] Figure 5 is a topological diagram of a power switch module according to an embodiment of the present invention;

[0015] Figure 6 Schematic diagram of a power switch module according to an embodiment of the present invention;

[0016] Figure 7 Schematic diagram of a power switch module according to an embodiment of the present invention;

[0017] Figure 8 is a topological diagram of a power switch module according to an embodiment of the present invention;

[0018] Figure 9 Schematic diagram of a power switch module according to an embodiment of the present invention;

[0019] Figure 10 Schematic diagram of a power switch module according to an embodiment of the present invention.

[0020] Description of main component reference numerals:

[0021] 100. Power switch module; 10. Substrate; 11. Second insulating layer; 20. Bridge arm; 21. Insulated gate bipolar transistor; 22. Field-effect transistor; 30. Diode; 40. First drive circuit component; 41. First insulating layer; 42. First drive gate; 43. First drive source; 50. Second drive circuit component; 51. Second drive gate; 52. Second drive source; 60. Thermistor; 70. Desaturation detection terminal; 80. Vertical resistor. DETAILED DESCRIPTION

[0022] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and are not to be construed as limiting the present invention.

[0023] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like, indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended only to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting the present invention. In the description of the present invention, "plurality" means two or more, unless otherwise clearly and specifically defined.

[0024] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they may refer to fixed connections, removable connections, or integral connections. They may refer to mechanical connections or electrical connections. They may refer to direct connections or indirect connections through an intermediary, and they may refer to internal communication between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in the present invention based on the specific circumstances.

[0025] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Furthermore, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0026] The disclosure herein provides many different embodiments or examples for realizing different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described herein. Of course, they are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numerals and / or reference letters in different examples, and such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides examples of various specific processes and materials, but those of ordinary skill in the art will appreciate the application of other processes and / or the use of other materials.

[0027] Silicon (Si)-based insulated gate bipolar transistors (IGBTs) are core components in power switching modules due to their ability to stably conduct even under high current demands, providing strong power support to the system and ensuring the stable operation of high-power devices. They are widely used in electric vehicles and are a key component in their drive systems. As the power density and efficiency requirements of electric vehicle and other applications increase, the need for higher output currents is often met by increasing the number of Si IGBT chips connected in parallel between the collector and emitter (for example, by soldering more IGBT chips onto the advanced memory buffer (AMB) substrate).

[0028] However, Si IGBT chips are limited in high-power applications due to the inherent properties of their materials. For example, adding IGBT chips in parallel results in a larger power switch module, increasing the space required. This not only limits the compactness of the electronic control system but also introduces higher parasitic inductance and capacitance, reducing system efficiency. This runs counter to the "miniaturization and lightweighting" trend pursued in this field.

[0029] Furthermore, IGBTs experience significant conduction and turn-off losses during switching. For example, under high-frequency operating conditions, IGBT switching losses can account for over 40% of total losses. These losses convert into significant heat, causing the IGBT to heat up and reduce device reliability.

[0030] In view of this, the present application proposes a power switch module and a power switch module. Figures 1 to 4 The power switch module can be applied to a power switch module, and the power switch module can be applied to a motor of a vehicle, etc. The power switch module of the present application is introduced below. The power switch module provided by the present application includes:

[0031] substrate 10;

[0032] The bridge arm 20 is provided on the substrate 10, and the bridge arm includes an insulated gate bipolar transistor 21 and a field effect transistor 22, and the insulated gate bipolar transistor 21 and the field effect transistor 22 are connected in parallel; wherein, the insulated gate bipolar transistor 21 is composed of a silicon-based material, and the field effect transistor 22 is composed of a silicon carbide material.

[0033] The insulated gate bipolar transistor 21 (IGBT) is made of silicon-based materials, and may be a Si IGBT 21 ; the field effect transistor 22 is made of silicon carbide materials, and may be a silicon carbide field effect transistor 22 (SiC-Metal-Oxide-Semiconductor Field-Effect Transistor, SiC MOSFET 22 ).

[0034] Specifically, the field-effect transistor 22, made of silicon carbide (SiC) material, features high breakdown field strength, fast switching speed, and high thermal conductivity. The high breakdown field strength enables SiC devices to excel in high-voltage applications, while the fast switching speed significantly reduces switching losses and improves power conversion efficiency. The high thermal conductivity helps the SiC device dissipate heat quickly during operation, ensuring stable operation at high power densities.

[0035] However, due to the extremely fast switching speed of SiC MOSFET 22, a high rate of change in voltage and current occurs during the switching process. This rapid change can induce high crosstalk voltages and spike voltages. These interference voltages not only negatively impact the normal operation of SiC MOSFET 22 itself, resulting in decreased device performance and shortened lifespan, but may also interfere with the normal operation of other surrounding electronic components, reducing the stability and reliability of the entire system. Furthermore, due to the complex manufacturing process, high precision requirements, and low yield rate of SiC MOSFET 22, the price of a single SiC MOSFET 22 is typically high (for example, the price of a single SiC MOSFET 22 is typically 3 to 15 times that of a single Si IGBT 21). This means that the production and use costs of a power switch module 100 using only SiC MOSFET 22 are relatively high.

[0036] Therefore, the power switch module 100 of the present application is provided with a bridge arm 20 on a substrate 20, wherein the bridge arm 20 includes a SiIGBT 21 and a SiC MOSFET 22, and the Si IGBT 21 and the SiC MOSFET 22 are connected in parallel. For example, the low switching loss and fast response to switching signals (fast switching speed) characteristics of the SiC MOSFET 22 are utilized to reduce the energy waste during each switching process of the power switch module 100 in a switching scenario. For another example, based on the characteristics that the current of the parallel circuit is distributed according to the resistance of each branch (more current flows to the branch with smaller on-resistance), and based on the characteristics of the Si IGBT 21 with strong current carrying capacity and stable conduction of large current (low on-state voltage drop), the Si IGBT 21 can stably carry large current in a continuously on scenario of the power switch module 100, thereby improving the stability of the power switch module 100. In other words, this application utilizes the Si IGBT 21 as the primary component of the power switch module 100 to ensure circuit conduction stability, while the SiC MOSFET 22 serves as an auxiliary component to reduce energy loss during the circuit switching process. The synergistic effect of the Si IGBT 21 and SiC MOSFET 22 not only improves the overall power density and operating efficiency of the power switch module 100, ensuring system stability, but also reduces the production cost and space occupied by the power switch module 100 while meeting power requirements, thus satisfying the demand for miniaturization and lightweighting of the power switch module 100.

[0037] Optionally, the current ratio (or current capacity ratio) between the insulated gate bipolar transistor 21 and the field effect transistor 22 is 2.5:1.

[0038] The rated current of the insulated gate bipolar transistor 21 is 250 amperes (A), and the rated current of the field effect transistor 22 is 100A.

[0039] Specifically, by setting the current capacity ratio of the IGBT and SiC MOSFET 22 to 2.5:1, where the IGBT has a rated current of 250A and the SiC MOSFET 22 has a rated current of 100A, the power switch module 100 can balance production costs and usage requirements in various application scenarios. For example, the power switch module 100 is used in a vehicle motor drive as an example. In scenarios such as motor startup or acceleration, a large current is required to drive the motor instantly. The IGBT's rated current of 250A ensures that the power switch module 100 can stably output a large current, meeting the motor's high torque requirements. In scenarios with frequent switching, the SiC MOSFET 22's rated current of 100A ensures a fast response to control signals, reduces switching losses, and improves overall system efficiency. In other words, a current capacity ratio of 2.5:1 not only solves the problem of high IGBT switching losses, but also maintains the original performance of the power switch module 100 at a lower cost.

[0040] See also Figure 3 In some embodiments, the IGBTs 21 include two, and the power switch module 100 further includes a diode 30 , which is disposed between the IGBTs 21 .

[0041] The diode 30 may be a fast recovery diode 30 (Fast Recovery Diode, FRD30).

[0042] Optionally, the field effect transistors 22 include two, the two field effect transistors 22 are arranged sequentially along a first direction, and the field effect transistors 22 and the insulated gate bipolar transistor 21 are arranged sequentially along a second direction, wherein the first direction and the second direction are perpendicular.

[0043] Specifically, there are two Si IGBTs 21 and two SiC MOSFETs 22, and an FRD 30 is provided between the two Si IGBTs 21. For example, see Figure 3Taking the vertical direction of the power switch module 100 in its current position as the first direction and the horizontal direction as the second direction as an example, the bridge arm 20 of the power switch module 100, from right to left and from bottom to top, includes a Si IGBT 21, an FRD 30, a Si IGBT 21, a SiC MOSFET 22, and a SiC MOSFET 22. The Si IGBT 21 and the SiC MOSFET 22 are arranged in sequence along the horizontal direction, and the two Si IGBTs 21 are arranged vertically in an upper and lower arrangement. It can be understood that when the power switch module 100 is in forward conduction, the two Si IGBTs 21 and the two SiC MOSFETs 22 are both on, and the FRD 30 is inoperative. When the power switch module 100 is in reverse conduction, the two Si IGBTs 21 and the two SiC MOSFETs 22 are both off, and the FRD 30 undergoes reverse breakdown. The two Si IGBTs 21 connected in series can jointly undertake the task of conducting large currents in the power switch module 100 to meet the power output requirements of the power switch module 100. The two SiC MOSFETs 22 arranged along the first direction are conducive to the compact structural design of the power switch module 100. An FRD 30 is also provided between the two Si IGBTs 21. The FRD 30 has the characteristic of short reverse recovery time. The FRD 30 can effectively reduce the thermal coupling between the two Si IGBTs 21 and can also reduce the abnormal flow of current between the chips, thereby reducing heat generation and improving the thermal stability of the power switch module 100.

[0044] See also Figure 4 In some embodiments, the power switch module 100 further includes a DC side (DC) and an AC pole (AC), the DC side includes a DC positive pole (DC+) and a DC negative pole (DC-), the bridge arm 20 includes an upper bridge arm 20 and a lower bridge arm 20, the drain or collector of the upper bridge arm 20 is connected to the DC positive pole, and the drain or collector of the lower bridge arm 20 is connected to the DC negative pole.

[0045] The field effect transistor 22 is connected to the AC pole.

[0046] Among them, the DC side can be the port for the power switch module 100 to interact with the DC power supply or load. The DC side includes a DC positive pole and a DC negative pole. The DC positive pole can be used to introduce the high potential of the DC power supply into the power switch module 100, providing positive DC power input for the entire circuit; the DC negative pole can serve as a loop for DC current to ensure a complete current path and ensure stable transmission of DC power.

[0047] Optionally, the source / emitter of the upper bridge arm 20 and the drain / collector of the lower bridge arm 20 are connected to the AC pole.

[0048] Specifically, the power switch module 100 also includes a DC side and an AC pole. The DC side includes a DC positive pole and a DC negative pole. The bridge arm 20 includes an upper bridge arm 20 and a lower bridge arm 20. The upper bridge arm 20 is connected to the DC positive pole, and the lower bridge arm 20 is connected to the DC negative pole. When the power switch module 100 is forward-conducting, the upper bridge arm 20 obtains electrical energy from the DC positive pole, and the lower bridge arm 20 is connected to the DC negative pole, forming a current loop to ensure current circulation. Figure 4 Taking the power switch module 100 as an example for application in a vehicle motor drive, since the inductance of the vehicle motor is typically several hundred microhenries and the current change rate of the AC pole is relatively small, by placing the SiC MOSFET 22 close to the AC pole and connecting the SiC MOSFET 22 to the AC pole, the induced voltage interference on the gate circuit is reduced, thereby reducing the interference on the gate circuit and improving the reliability of the power switch module 100.

[0049] It is understandable that when the SiC MOSFET 22 is arranged near the DC side, the voltage and current fluctuations on the DC side are relatively large, which may cause significant interference to the gate of the SiC MOSFET 22 and affect the stability of the power switch module 100 during operation.

[0050] See also Figure 4 In some embodiments, the substrate 20 includes an insulating layer, a first conductive layer, and a second conductive layer, and the first conductive layer and the second conductive layer are respectively disposed on both sides of the insulating layer.

[0051] Optionally, the power switch module 100 further includes a thermistor 60 , which is disposed on the second conductive layer and located at one end close to the DC positive electrode side.

[0052] The thermistor 60 can quickly respond to the temperature of the power switch module 100 and convert the temperature information into an electrical signal to monitor the temperature of the power switch module 100 .

[0053] Optionally, the power switch module 100 further includes a desaturation detection terminal 70 and a vertical resistor 80 . The desaturation detection terminal 70 can be used to detect the state of the Si IGBT 21 , and the vertical resistor 80 can be used for current detection, etc.

[0054] Among them, the insulating layer can be obtained based on a material with insulating properties (for example, a ceramic material, etc.). For example, the insulating layer can be a silicon nitride (Si3N4) ceramic layer. The insulating layer can isolate the first conductive layer and the second conductive layer to prevent a short circuit between the first conductive layer and the second conductive layer, thereby ensuring the safety and stability of the power switch module 100.

[0055] The first conductive layer and the second conductive layer can be made of a material with excellent electrical conductivity to reduce resistance loss during current transmission. For example, the first conductive layer and the second conductive layer can be copper layers or aluminum layers.

[0056] Optionally, the power switch module 100 further includes a first drive circuit component 40 and a second drive circuit component 50, wherein the first drive circuit component is connected to the lower bridge arm 20 and the DC negative pole, and the second drive circuit component is connected to the upper bridge arm 20 and the DC positive pole;

[0057] Optionally, the first driving circuit component is connected to the gate and source of the lower bridge arm 20 , and the second driving circuit component is connected to the gate and source of the upper bridge arm 20 .

[0058] In this way, the driving circuit component can accurately control the on and off of the upper and lower bridge arms 20 , thereby achieving effective control of the power switch module 100 .

[0059] Optionally, the insulating layer includes a first insulating layer 41 and a second insulating layer 11, the first driving circuit component includes a first driving gate 42 and a first driving source 43, the first driving gate 42 and the first driving source 43 are provided on the first insulating layer 41, and the first insulating layer 41 is provided on the first conductive layer;

[0060] The second driving circuit component includes a second driving gate 51 and a second driving source 52 . The second driving gate 51 and the second driving source 52 are disposed on the second insulating layer 11 .

[0061] The first driving circuit component is arranged on the first conductive layer, and the second driving circuit component is arranged on the insulating layer.

[0062] The insulating layer includes a first insulating layer 41 (such as Figure 3 As shown, the first insulating layer 41 can be an insulating coating), the first drive circuit component includes a first drive gate 42 and a first drive source 43, the first drive gate 42 and the first drive source 43 are arranged on the first insulating layer 41, and the first insulating layer 41 is arranged on the first conductive layer; the second drive circuit component is arranged on the second insulating layer 11, the second drive circuit component includes a second drive gate 51 and a second drive source 52, and the second drive gate 51 and the second drive source 52 are both arranged on the second insulating layer 11.

[0063] It can be understood that the second drive gate 51 can receive drive signals to turn on and off the various devices in the upper bridge arm 20, and the second drive source 52 can provide a return path for the current to ensure normal operation of the circuit. The second drive circuit component is disposed on the insulating layer, which not only enables an effective connection between the upper bridge arm 20 and the DC positive electrode, but also utilizes the characteristics of the insulating layer to improve the safety and stability of the drive circuit.

[0064] Optionally, the first driving gate 42 includes a first terminal 421 , the first driving source 43 includes a second terminal 431 , the second driving gate 51 includes a third terminal 511 , and the second driving source 52 includes a fourth terminal 521 .

[0065] The insulating base member may be made of a material having insulating properties (eg, a ceramic material, etc.), for example, a silicon nitride (Si3N4) ceramic layer.

[0066] Specifically, the first conductive layer and the second conductive layer are respectively arranged on both sides of the insulating layer 11, and the first conductive layer and the second conductive layer work together to construct the current transmission network of the power switch module 100. For example, taking the power switch module 100 arranged on an AMB as an example for explanation, in the related art, the AMB typically includes an upper copper layer, a ceramic layer, and a lower copper layer. The upper copper layer, the AC pole, the DC side, and the drive circuit of the bridge arm 20 are typically arranged on the ceramic layer. Due to the limited area of the ceramic layer, after the AC pole, the DC side, and the drive circuit of the bridge arm 20 are arranged on the ceramic layer, the space and area on the ceramic layer where the upper copper layer can be arranged will be occupied, resulting in an increase in inductance and resistance, affecting the resistance, heat dissipation, efficiency and other performance of the power switch module 100. The present application constructs the drive circuit of the lower bridge arm 20 chip by setting up a first drive circuit component including a first insulating layer 41, a first drive gate 42 and a first drive source 43. Based on the reuse of the first insulating layer 41 (insulating layer), it can not only provide stable support for the first drive gate 42 and the first drive source 43, but also ensure electrical insulation between them and the first conductive layer, thereby ensuring the area of the first conductive layer, thereby achieving the effect of reducing the return resistance and improving performance.

[0067] See also Figure 5 In some embodiments, the power switch module 100 further includes a delay resistor, which includes a first resistor 91 and a second resistor 92. The first resistor 91 is connected in series with the gate of the insulated gate bipolar transistor 21, and the second resistor 92 is connected in series with the gate of the field effect transistor 22. The resistance of the second resistor 92 is greater than that of the first resistor 91.

[0068] Specifically, a first resistor 91 and a second resistor 92 are provided, with the first resistor 91 connected in series with the gate of the insulated gate bipolar transistor 21 and the second resistor 92 connected in series with the gate of the field-effect transistor 22. The resistance of the second resistor 92 is greater than that of the first resistor 91. Since both the Si IGBT 21 and the SiC MOSFET 22 are inductive devices and have parasitic inductance, changes in current during the on- and off-times of the Si IGBT 21 generate an induced electromotive force, which hinders current change. Since the resistance of the second resistor 92 connected to the gate of the SiC MOSFET 22 is greater than the resistance of the first resistor 91 connected to the gate of the Si IGBT 21, the time constant of the SiC MOSFET 22 is greater than that of the Si IGBT 21. Therefore, when the power switch module 100 receives a switching signal, the control signal to the SiC MOSFET 22 will lag, achieving the function of the Si IGBT 21 turning on and off first and the SiC MOSFET 22 turning on and off last.

[0069] For example, see Figure 6 When the power switch module 100 receives a shutdown signal, the resistance of the second resistor 92 connected to the gate of the SiC MOSFET 22 is greater than the resistance of the first resistor 91 connected to the gate of the Si IGBT 21, i.e., the time constant of the SiC MOSFET 22 is greater than the time constant of the Si IGBT 21. Therefore, the Si IGBT 21 turns off first. Due to the characteristics of inductive devices, the current of the Si IGBT 21 gradually decreases. The current carried by the Si IGBT 21 is greater than the current carried by the SiC MOSFET 22. Therefore, during the shutdown process, the Si IGBT 21 commutates to the SiC MOSFET 22, and the current is transferred from the Si IGBT 21 to the SiC MOSFET 22 (as shown in the figure, the current of the SiC MOSFET 22 gradually increases, indicating that it has taken over the current transmission task of the Si IGBT 21 in the circuit). After the SiC MOSFET 22 begins to turn off, its current value also decreases.

[0070] Similarly, see, for example, Figure 7 When the power switch module 100 is first turned on, the current of the Si IGBT 21 rises rapidly. Since the resistance of the second resistor 92 is greater than that of the first resistor 91, the current of the SiC MOSFET 22 starts to rise after the current of the Si IGBT 21 rises, achieving the effect of the IGBT being turned on first.

[0071] In certain embodiments, see Figure 8 The power switch module 100 further includes a delay capacitor 93 , and two ends of the delay capacitor 93 are respectively connected to the source and gate of the field effect transistor 22 .

[0072] Specifically, see Figure 9 and Figure 10 When the source and gate of SiC MOSFET 22 are connected to delay capacitor 93, the time constant of SiC MOSFET 22 can also be made greater than that of Si IGBT 21. The gate voltage of SiC MOSFET 22 needs to rise to a certain threshold before the device can turn on. Due to the provision of delay capacitor 93 (delay capacitor 93 needs to be charged), the turn-on time of Si IGBT 21 will be relatively slow compared to Si IGBT 21 without delay capacitor 93. When a shutdown signal is received, the discharge process of delay capacitor 93 hinders the rapid drop of voltage, resulting in a delay in shutdown.

[0073] The present application also proposes an electric motor, which may include the power switch module 100 described in any of the above embodiments and can achieve the same technical effect. For the sake of brevity, it will not be described here in detail.

[0074] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that specific features, structures, materials, or characteristics described in conjunction with an embodiment or example are included in at least one embodiment or example of the present invention. In this specification, illustrative descriptions of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0075] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to the embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the claims and their equivalents.

Claims

1. A power switch module, characterized in that: include: substrate; A bridge arm, the bridge arm being provided on the substrate, the bridge arm comprising an insulated gate bipolar transistor and a field effect transistor, the insulated gate bipolar transistor and the field effect transistor being connected in parallel; Wherein, the insulated gate bipolar transistor is made of silicon-based material, and the field effect transistor is made of silicon carbide material.

2. The power switch module according to claim 1, wherein: The insulated gate bipolar transistors include two, and the power switch module further includes a diode, which is arranged between the insulated gate bipolar transistors.

3. The power switch module according to claim 1 or 2, characterized in that: The field effect transistors include two, and the two field effect transistors are arranged in sequence along a first direction. The field effect transistors and the insulated gate bipolar transistor are arranged in sequence along a second direction, wherein the first direction is perpendicular to the second direction.

4. The power switch module according to any one of claims 1 to 3, characterized in that: The power switch module also includes a DC side and an AC pole, the DC side includes a DC positive pole and a DC negative pole, the bridge arm includes an upper bridge arm and a lower bridge arm, the upper bridge arm drain / collector is connected to the DC positive pole, and the lower bridge arm drain / collector is connected to the DC negative pole.

5. The power switch module according to claim 4, characterized in that: The upper bridge arm source / emitter and the lower bridge arm drain / collector are connected to the AC pole.

6. The power switch module according to claim 4, characterized in that: The substrate includes an insulating layer, a first conductive layer and a second conductive layer, wherein the first conductive layer and the second conductive layer are respectively arranged on both sides of the insulating layer.

7. The power switch module according to claim 6, characterized in that: The power switch module further includes a first drive circuit component and a second drive circuit component, wherein the first drive circuit component is connected to the gate and the source of the lower bridge arm, and the second drive circuit component is connected to the gate and the source of the upper bridge arm.

8. The power switch module according to claim 7, characterized in that: The first driving circuit component is disposed on the first conductive layer, and the second driving circuit component is disposed on the second conductive layer.

9. The power switch module according to claim 7 or 8, characterized in that: The insulating layer includes a first insulating layer and a second insulating layer, the first driving circuit component includes a first driving gate and a first driving source, the first driving gate and the first driving source are arranged on the first insulating layer, and the first insulating layer is arranged on the first conductive layer; The second driving circuit component includes a second driving gate and a second driving source, and the second driving gate and the second driving source are arranged on the second insulating layer.

10. The power switch module according to claim 1, wherein: The current ratio of the insulated gate bipolar transistor to the field effect transistor is 2.5:

1.

11. The power switch module according to claim 10, characterized in that: The rated current of the insulated gate bipolar transistor is approximately 250 amperes, and the rated current of the field effect transistor is approximately 100 amperes.

12. The power switch module according to claim 1, wherein: The power switch module also includes a delay resistor, which includes a first resistor and a second resistor. The first resistor is connected in series with the gate of the insulated gate bipolar transistor, and the second resistor is connected in series with the gate of the field effect transistor. The resistance of the second resistor is greater than that of the first resistor.

13. The power switch module according to claim 1, wherein: The power switch module further includes a delay capacitor, and two ends of the delay capacitor are respectively connected to the source and gate of the field effect transistor.

14. The power switch module according to claim 4, characterized in that: The power switch module further includes a thermistor, which is disposed on the second conductive layer of the substrate.

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