Vacuum brazing process of heat dissipation assembly

Abstract

The vacuum brazing process comprises the steps that an alloy substrate and fins are placed in a liquid nitrogen cooling environment to be subjected to graphene deposition treatment, then silver-based brazing filler metal is deposited, pulse airflow is introduced every preset period to disturb brazing filler metal atoms, the alloy substrate and the fins are placed in an alignment clamp, and alignment treatment is conducted on a crystal nucleus substrate and the fins; brazing is controlled to be started in a vacuum brazing furnace, interface bonding of graphene and brazing filler metal is promoted, and an initial brazing assembly is formed; the initial brazing assembly is subjected to annealing treatment, vibration is applied to the initial brazing assembly in the annealing process, and an optimized brazing assembly is obtained; and under the inert atmosphere, a diamond-like carbon film is deposited on the surface of the optimized brazing assembly, and the heat dissipation assembly is obtained. The interface bonding strength and the heat conduction efficiency are remarkably improved, the heat dissipation requirement of a high-power-density electronic device is met, the service life of the device is effectively prolonged, and the working stability of the device is improved.

Description

Technical Field

[0001] The present application relates to the field of vacuum brazing technology, and in particular to a vacuum brazing process for a heat dissipation component. Background Art

[0002] As the power density of electronic devices continues to increase, heat dissipation components play an increasingly critical role in high-performance electronic devices. Existing heat dissipation components typically use a metal substrate and fins connected through brazing, bonding, or mechanical fastening to achieve rapid heat conduction and dissipation. Existing brazing processes often use silver- or copper-based solders in a vacuum or inert atmosphere to improve connection strength and thermal conductivity.

[0003] However, existing technologies have significant shortcomings in terms of interface bonding quality. Existing brazing processes struggle to form strong interfacial bonds between the substrate and the solder, and between the solder and the fins. This results in high thermal resistance, limiting the overall thermal efficiency of the heat dissipation assembly. This problem is particularly prominent in high-power density devices, where increased interfacial thermal resistance significantly reduces heat dissipation, impacting device stability and lifespan.

[0004] To address the problem of insufficient interface bonding quality, existing technologies attempt to improve interface performance by surface modification or optimizing brazing parameters. For example, some processes introduce coatings on the substrate surface or increase surface activity through high-temperature pretreatment, but these methods often have limited effectiveness. The coating may peel off due to mismatched thermal expansion coefficients. Some technologies enhance interface bonding by adding nanoparticles or adjusting the solder composition, but these methods have difficulty controlling the uniformity of particle distribution. Although the above-mentioned improvement measures have improved the interface bonding strength to a certain extent, they still cannot completely solve the problem of high interface thermal resistance. Especially under extreme working conditions, the performance of the heat dissipation component is still limited. Summary of the Invention

[0005] The purpose of this application is to provide a vacuum brazing process for heat dissipation components to solve the technical problem of high thermal resistance caused by insufficient interface bonding quality in existing VCSEL chip manufacturing technology.

[0006] To achieve this goal, this application adopts the following technical solutions: A vacuum brazing process for a heat dissipation component, comprising: The alloy substrate and fins are placed in a liquid nitrogen cooling environment, and graphene is deposited using methane as a carbon source to obtain graphene-modified substrates and fins; Depositing silver-based solder on the surface of the graphene-modified substrate and fins, and introducing pulsed airflow at preset intervals to disturb the solder atoms, thereby obtaining a core substrate and fins with a solder nanocrystalline core layer distributed on the surface; Placing the crystal core substrate and the fins in an alignment fixture, placing the alignment fixture in a vacuum brazing furnace, and performing alignment processing on the crystal core substrate and the fins; Control the vacuum brazing furnace to start brazing, and set the vacuum degree inside the vacuum brazing furnace to be lower than 10 -5 Pa, promotes the interfacial bonding between graphene and brazing filler metal to form the initial brazed assembly; performing an annealing treatment on the initial brazing assembly, and applying vibration to the initial brazing assembly during the annealing process to obtain an optimized brazing assembly; Under an inert atmosphere, a diamond-like carbon film is deposited on the surface of the optimized brazing assembly to obtain the heat dissipation assembly.

[0007] Furthermore, the silver-based solder includes an alloy consisting of silver, copper and zirconium, wherein the mass percentage of silver is 85-95%, the mass percentage of copper is 3-10%, and the mass percentage of zirconium is 2-5%.

[0008] Furthermore, the inert atmosphere is a combination of one or more of argon, nitrogen or helium atmospheres.

[0009] Furthermore, the step of placing the alloy substrate and the fins in a liquid nitrogen cooling environment and performing a graphene deposition process using methane as a carbon source to obtain the graphene-modified substrate and the fins comprises: Placing the alloy substrate and fins in an ultrasonic cleaning device and performing ultrasonic cleaning using a mixed solution of ethanol and deionized water to obtain clean substrates and fins; Cooling the clean substrate and fins by circulating liquid nitrogen to control the temperature to -190--200° C., thereby obtaining a low-temperature substrate and fins in an ultra-low temperature state; The low-temperature substrate and fins are placed in a vacuum environment, methane is introduced as a carbon source gas, and the methane gas is subjected to plasma-assisted cracking by a radio frequency plasma generator to form an activated carbon source; performing a deposition process on the low-temperature substrate and the fin according to the activated carbon source to form a primary graphene film; A low-temperature substrate and fins covered with a primary graphene film are placed in a reactor, and a trace amount of silane gas is introduced under an inert argon atmosphere to form a silicon-based passivation layer on the surface of the primary graphene film to obtain a graphene-modified substrate and fins.

[0010] Furthermore, before the step of depositing silver-based solder on the surface of the graphene-modified substrate and the fin, the method further comprises: Silver, copper, and zirconium alloy are used as basic raw materials to prepare a three-layer structure powder. The zirconium content of the first layer of powder close to the substrate is 6wt%, the zirconium content of the intermediate transition layer powder is 3wt%, and the zirconium content of the third layer of powder close to the fin side is 1wt%. The three-layer structure powder is pressed into shape under an argon protection environment, the pressing pressure is controlled at 200-250 MPa, and the holding time is 5-10 minutes to obtain a preliminary solder blank with a gradient structure; placing the preliminary solder blank in a sintering furnace and sintering it at a temperature of 600-650° C. to form a solder matrix; placing the solder matrix in a reactor, introducing methane and hydrogen into the reactor, and depositing a carbon nanotube film on the solder matrix to form a coating solder; The coating solder is dried and cooled to obtain the silver-based solder.

[0011] Furthermore, the step of depositing silver-based solder on the surface of the graphene-modified substrate and fins, and introducing pulsed airflow at preset intervals to disturb the solder atoms to obtain a core substrate and fin with a solder nanocrystalline core layer distributed on the surface includes: The graphene modified substrate and fin are subjected to zoned preheating treatment, the temperature of the central area is controlled at 130-150° C., the temperature of the edge area is controlled at 100-110° C., the heating rate is maintained at 2-3° C. / min, and the preheating time is 10-15 minutes to obtain a preheated graphene substrate and fin; Depositing a silver-based solder on the preheated graphene substrate and fins at a deposition temperature of 110-130° C. to form a thin layer of silver-based solder on the graphene surface to obtain a deposited substrate and fins; During the deposition process, argon pulse flow is periodically introduced for disturbance. The pulse period is 0.4~0.6 seconds, the air flow pressure fluctuation range is 0.015~0.025Pa, and the single pulse duration is 0.1~0.2 seconds. This causes the silver-based solder atoms to be densely distributed along the graphene surface to form nano-scale crystal nuclei, obtaining a crystal core substrate and fins.

[0012] Furthermore, the step of placing the core substrate and the fins in an alignment fixture, placing the alignment fixture in a vacuum brazing furnace, and performing alignment processing on the core substrate and the fins includes: The carbon fiber fixture is used to pre-align the core substrate and the fin to obtain a preliminary alignment assembly; Placing the preliminary alignment assembly in a vacuum brazing furnace, evacuating the vacuum brazing furnace, and slowly introducing pure argon gas during the vacuuming process; The gap between the core substrate and the fin is monitored by a laser interferometer, and the gap deviation between the core substrate and the fin is controlled within ±0.3-0.5 μm; The temperature in the vacuum brazing furnace is controlled to rise to 150-200°C at a heating rate of 0.5-1°C / min and maintained for 10-15 minutes to complete the alignment process.

[0013] Furthermore, the vacuum brazing furnace is controlled to start brazing, and the vacuum degree inside the vacuum brazing furnace is set to be lower than 10 -5 Pa, promoting the interfacial bonding between graphene and the brazing material to form an initial brazing assembly, comprising: In the vacuum brazing furnace, place the core substrate and fins in the positioning fixture in a vacuum of less than 10 -5 Pa environment, heating brazing was carried out in multiple stages. In the first stage, the temperature was raised from room temperature to 350 °C at a heating rate of 2.5 °C / min and kept at 350 °C for 25 minutes. In the second stage, the temperature was raised from 350°C to 600°C in a vacuum brazing furnace at a heating rate of 1.8°C / min, and periodic triangular wave temperature fluctuations were applied with an amplitude of ±8°C and a frequency of 0.08 Hz, and the temperature was kept at this temperature for 18 minutes. In the third stage, the temperature was raised from 600°C to 680°C at a rate of 1.2°C / min. Low-frequency sinusoidal temperature fluctuations were applied at 680°C with an amplitude of ±12°C and a frequency of 0.05 Hz for 12 minutes to allow the solder molecules to migrate along the graphene interface for filling. In the vacuum brazing furnace, the temperature was lowered from 670℃ to 300℃ at a rate of 0.8℃ / min, and the vacuum degree in the vacuum brazing furnace was increased to 10 -5 Pa to 10 -6 The Pa cycle was switched and the temperature was kept at 300 °C for 22 minutes to form the initial brazed assembly.

[0014] Furthermore, the step of annealing the initial brazing assembly and applying vibration to the initial brazing assembly during the annealing process to obtain an optimized brazing assembly includes: The initial brazing assembly is heated to 350° C. in a vacuum brazing furnace at a heating rate of 1° C. / min, and low-frequency sinusoidal vibration with a frequency of 0.02 Hz and an amplitude of 0.05 μm is applied, and the vibration is transmitted to the preheated brazing assembly through a fixture to form a preliminary annealed assembly; The preliminary annealed component is further heated to 400° C. at a heating rate of 0.8° C. / min while pausing vibration to obtain a high-temperature annealed component; The temperature of the high-temperature annealing component was reduced to 300° C. at a cooling rate of 0.6° C. / min, and triangular wave vibration with a frequency of 0.015 Hz and an amplitude of 0.08 μm was reapplied to obtain a vibration-optimized component. The vibration optimization assembly was slowly cooled to room temperature at a cooling rate of 0.4°C / min, and the vacuum degree was kept below 10 -5 Pa, and applied low-frequency vibration with a frequency of 0.01 Hz and an amplitude of 0.03 μm to obtain the optimized brazed assembly.

[0015] Furthermore, the step of depositing a diamond-like carbon film on the surface of the optimized brazing assembly under an inert atmosphere to obtain the heat dissipation assembly includes: In an inert argon atmosphere, using silane and methane as reaction gases, a silicon-carbon transition layer is deposited on the surface of the optimized brazing assembly. During the deposition process, the chamber temperature is controlled at 150-200° C. and the gas pressure is controlled at 0.3-0.6 Pa. The silicon-carbon transition layer is used as a substrate, methane and argon are introduced as reaction gases, the ratio of methane to argon is 1:4, and a diamond-like carbon film is deposited on the surface of the transition layer substrate by radio frequency plasma excitation. The chamber temperature during the deposition process is 200-250°C, the gas pressure is 0.2-0.5 Pa, and the radio frequency power is 200-250W; In the deposition chamber, a pulsed DC bias is applied to the silicon-carbon transition layer, carbon ions in the plasma are guided to bombard the substrate surface in a direction based on the bias electric field, and the bombarded substrate is polished to obtain the heat dissipation component.

[0016] Compared with the prior art, this application has the following beneficial effects: The vacuum brazing process of the heat dissipation component of the present application forms a high-quality graphene modification layer on the surface of the alloy substrate and fins by performing graphene deposition treatment using methane as a carbon source in a liquid nitrogen cooling environment, thereby enhancing the interfacial bonding ability between the substrate and the brazing material. Pulsed airflow disturbance technology is introduced during the deposition of silver-based brazing material to form a uniformly distributed brazing material nanocrystalline core layer, thereby improving the adhesion uniformity of the brazing material. High-precision alignment fixtures and an ultra-high vacuum brazing environment are used to promote high-strength chemical bonding between graphene and the brazing material, significantly reducing the interfacial thermal resistance and forming an initial brazed component with high thermal conductivity. In addition, applying vibration treatment during the annealing process effectively releases the internal stress in the brazing process, optimizes the interface microstructure, and improves the mechanical stability and long-term reliability of the component. Finally, the diamond-like carbon film is deposited under an inert atmosphere, which not only further improves the surface thermal conductivity and wear resistance of the heat dissipation component, but also enhances its environmental adaptability under extreme working conditions.

[0017] In summary, this application achieves a significant improvement in interface bonding strength and thermal conductivity by synergistically optimizing steps such as graphene deposition, solder nucleus formation, vacuum brazing, annealing vibration, and diamond-like carbon film deposition. It is particularly suitable for the heat dissipation needs of high-power density electronic devices, and can effectively extend the service life of the device and improve its working stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0019] The structures, proportions, sizes, etc. depicted in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not intended to limit the conditions under which this application can be implemented, and therefore have no substantive technical significance. Any structural modifications, changes in proportional relationships, or adjustments in size, without affecting the efficacy and objectives that can be achieved by this application, should still fall within the scope of the technical contents disclosed in this application.

[0020] Figure 1 A schematic diagram of the overall steps of the vacuum brazing process for heat dissipation components; Figure 2 A schematic diagram of the steps of a vacuum brazing process for a heat dissipation component according to an embodiment; Figure 3 The figure is a schematic diagram of the steps of another embodiment of the vacuum brazing process for heat dissipation components. DETAILED DESCRIPTION

[0021] In order to make the purpose, features, and advantages of the invention of this application more obvious and easy to understand, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the embodiments described below are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0022] In the description of this application, it should be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings and are intended only to facilitate the description of this application and simplify the description. They do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore should not be understood as limiting this application. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a centrally located component.

[0023] The technical solution of the present application will be further explained below with reference to the accompanying drawings and through specific implementation methods.

[0024] refer to Figure 1, the present application provides a vacuum brazing process for a heat dissipation component, comprising: S1: placing the alloy substrate and fins in a liquid nitrogen cooling environment and performing graphene deposition using methane as a carbon source to obtain graphene-modified substrates and fins; In step S1, the process is performed in a liquid nitrogen cooling environment. The extremely low temperature of liquid nitrogen (approximately -195.8°C) significantly reduces the surface temperature of the substrate and fins. An alloy substrate (such as a copper or aluminum-based alloy, commonly used in heat sinks due to its high thermal conductivity) and fins (of the same or compatible materials) are placed in a specially designed low-temperature reaction chamber. This chamber is maintained at a constant low temperature by a liquid nitrogen circulation system, and the temperature is stabilized within a range of -190°C to -195°C by dynamically adjusting the liquid nitrogen flow rate. Chemical vapor deposition (CVD) is employed, with methane (CH4) introduced into the reaction chamber as the carbon source gas, supplemented by hydrogen (H2) as the reducing gas. The hydrogen cleans the substrate surface and promotes the cracking of methane molecules. To achieve graphene deposition, an appropriate methane and hydrogen mixture is introduced into the reaction chamber. The gas ratio should be between 1:10 and 1:20 by volume. This ratio allows for the proper cracking of methane to produce carbon atoms at low temperatures while avoiding excessive amorphous carbon deposition. To activate the cracking of methane molecules and promote the orderly arrangement of carbon atoms on the substrate surface, a high-energy plasma can be generated at low temperatures using a radio frequency or microwave plasma source. This plasma effectively decomposes methane molecules and provides sufficient energy to enable carbon atoms to migrate across the substrate surface and form a hexagonal honeycomb graphene structure. During the deposition process, the substrate and fins undergo pretreatment, such as plasma cleaning to remove surface impurities and oxides, to enhance surface chemical activity. After pretreatment, the substrate and fins are placed on a sample stage within the reaction chamber, which typically features a rotation function to ensure uniform deposition. During deposition, the chamber pressure is maintained between 0.1 Pa and 10 Pa, and the deposition time is controlled between 30 minutes and 2 hours, depending on the desired graphene layer thickness and quality. For example, to obtain single-layer or few-layer graphene (1-3 layers), the deposition time can be set to approximately 1 hour. The deposited graphene is then analyzed in situ using Raman spectroscopy to confirm the presence and intensity of characteristic peaks (such as the G and 2D peaks), thereby verifying the graphene's quality.

[0025] S2: depositing silver-based solder on the surface of the graphene-modified substrate and fin, and introducing pulsed airflow at preset intervals to disturb the solder atoms, thereby obtaining a core substrate and fin with a solder nanocrystalline core layer distributed on the surface; In step S2, a silver-based solder is deposited on the surface of the graphene-modified substrate and fins. Silver-based solder is selected as the brazing material due to its excellent thermal conductivity, electrical conductivity, and good wettability with graphene. Silver-based solder can include silver-copper alloys (such as Ag-Cu eutectic alloys) or silver-based composite solders, which can form a stable interfacial bond at lower brazing temperatures. To achieve the deposition of the solder, physical vapor deposition (PVD) techniques, such as magnetron sputtering or evaporation deposition, are used. High-energy ions bombard a silver-based target, causing the target atoms to sputter and deposit onto the substrate and fin surfaces, thereby forming a dense solder film. During the deposition process, the graphene-modified substrate and fins are placed in a vacuum chamber. The operating pressure of the chamber is controlled between 0.1 Pa and 1 Pa to reduce the scattering of gas molecules and improve deposition efficiency. At the same time, the sputtering power is adjusted (between 100W and 500W) to set the deposition rate to 0.1 nm / s to 1 nm / s, thereby keeping the solder layer thickness within the range of tens to hundreds of nanometers. The presence of the graphene-modified layer improves the bonding strength between the solder and the substrate, as the sp² carbon structure of graphene can form van der Waals forces or local chemical bonds with the silver-based solder, thereby enhancing the adhesion of the solder. After the solder is deposited, a pulsed gas flow is introduced at preset intervals to disturb the solder atoms. The dynamic action of the gas flow induces the rearrangement and crystallization of the solder atoms on the substrate surface, thereby forming a uniformly sized solder nanocrystalline core layer. In specific implementations, the pulsed gas flow consists of an inert gas (such as argon or nitrogen) and is injected into the deposition chamber at a fixed period and pressure through a high-precision pulse valve. The pulse period is generally set to 1 to 10 seconds, and the gas flow pressure is controlled between 0.01 Pa and 0.1 Pa to avoid excessive disturbance of the solder layer. The role of pulsed airflow lies in its short, high-speed flow, which can generate local shear forces and turbulence effects on the solder surface. These mechanical effects can break up the disordered accumulation of solder atoms during deposition, promote the migration of atoms to lower-energy lattice positions, and thus induce the nucleation and growth of nanoscale nuclei. For example, in actual operation, the pulsed airflow cycle can be set to 5 seconds, with each pulse lasting 0.5 seconds, and the argon pressure is 0.05 Pa. Through this periodic disturbance, the atoms on the solder surface can gradually form nanocrystalline nuclei with a size between 5 nm and 20 nm, promoting uniform bonding between the solder and graphene interface.

[0026] S3: placing the core substrate and the fins in an alignment fixture, placing the alignment fixture in a vacuum brazing furnace, and performing alignment processing on the core substrate and the fins; In step S3, the crystal core substrate and the fins are precisely aligned, and the alignment fixture can be made of high-temperature resistant and corrosion-resistant materials, such as stainless steel or molybdenum alloy, so that it can maintain structural stability and dimensional accuracy in the high temperature and low pressure environment of the vacuum brazing furnace. The design of the fixture needs to be customized according to the geometric shapes of the substrate and the fins. For example, the substrate is a planar structure, and the fins are thin sheets or heat dissipation elements with a specific folding structure. Therefore, corresponding positioning grooves or snap-on structures are set inside the fixture to fix the substrate and the fins so that their relative positions do not shift during the brazing process. In actual operation, the crystal core substrate and the fins are placed in the preset positions of the fixture, the substrate is located at the bottom of the fixture, and the fins are inserted into the positioning grooves of the fixture vertically or at a specific angle according to the design requirements, and the contact surface between the two is tightly fitted by the mechanical constraint force of the fixture. After the core substrate and fins are secured to an alignment fixture and placed in a vacuum brazing furnace, a laser beam scans the edges of the substrate and fins to detect their relative positional deviations. A servo motor drives the fixture for fine-tuning, achieving micron-level alignment accuracy. This alignment ensures that the nanocrystalline core layer of the brazing material melts uniformly during the brazing process, filling the interface and forming a high-strength brazed joint.

[0027] S4: Control the vacuum brazing furnace to start brazing, and set the vacuum degree inside the vacuum brazing furnace to be lower than 10 -5 Pa, promotes the interfacial bonding between graphene and brazing filler metal to form the initial brazed assembly; In step S4, before starting brazing, the internal environment of the vacuum brazing furnace is controlled to reach a very high vacuum degree, that is, less than 10 -5 Pa, which can significantly reduce the presence of impurity molecules such as oxygen and water vapor in the environment, thereby preventing the solder and graphene from being oxidized or contaminated at high temperatures. This vacuum degree can be achieved by combining a mechanical pump with a molecular pump. The mechanical pump first reduces the pressure in the furnace to about 10 -2 Pa, and then the molecular pump further evacuates until it reaches 10 -5Pa or less. After the vacuum environment is prepared, the brazing process begins. Silver-based brazing filler metal has a low melting point (approximately 600-800°C, depending on the alloy composition), so the brazing temperature is set slightly above the filler metal's melting point, for example, 850°C, to ensure adequate wetting of the graphene surface while avoiding damage to the graphene structure caused by excessive temperatures. During the heating process, the furnace temperature should be gradually increased using a programmed ramp, for example, at a rate of 5°C / min to the target temperature, to minimize thermal stress damage to the substrate and fins. Under the high-temperature vacuum environment, active atoms in the silver-based brazing filler metal (such as silver or added trace elements) chemically bond with carbon atoms on the graphene surface, forming a stable interfacial layer. This bonding may involve van der Waals forces, covalent bonds, or metal-carbon bonds, depending on the filler metal composition and the graphene surface state. Upon completion of the brazing process, the core substrate and fin are firmly connected by the filler metal layer, forming the initial brazed assembly. To verify the interfacial bonding effect, the interface microstructure can be observed using a scanning electron microscope (SEM), or the connection strength can be assessed through tensile testing. For example, the test results of a heat sink component sample showed that its interfacial shear strength exceeded 50 MPa, indicating that the graphene and solder formed a high-quality bond that met the requirements of high-performance heat sink components.

[0028] S5: performing annealing treatment on the initial brazing assembly, applying vibration to the initial brazing assembly during the annealing process to obtain an optimized brazing assembly; In step S5, the annealing treatment is performed by heating the assembly to a temperature below the melting point of the solder (60%-80% of the brazing temperature, for example, 500-600°C) and holding the temperature for a period of time (typically 1-2 hours). This allows the grains in the solder to rearrange, releasing internal stress while promoting atomic diffusion at the interface between graphene and the solder, thereby enhancing the bond strength. The annealing process is carried out in a controlled atmosphere to prevent oxidation of the solder or graphene at high temperatures. A high-purity inert gas (such as argon or nitrogen) can be used as a protective atmosphere, with an atmosphere purity of at least 99.999%. To achieve this condition, the initial brazed assembly can be placed in an annealing furnace, and before heating, an inert gas is introduced to purge any residual oxygen in the furnace until the oxygen content is below 10 ppm. The annealing furnace requires precise temperature control. A PID (proportional-integral-derivative) controller is used to ensure temperature fluctuations within ±5°C to prevent excessively high temperatures from softening the solder or excessively low temperatures from preventing effective stress release. The heating and cooling rates during the annealing process are also controlled, for example, at a rate of 3-5°C / min to the target temperature and then slowly cooling to room temperature at the same rate after the soaking period to prevent re-accumulation of thermal stress. During the annealing process, mechanical vibration is used to further optimize the microstructure of the solder layer. Vibration promotes a uniform distribution of nanocrystalline nuclei within the solder, reduces porosity and segregation within the solder layer, and thus improves the density and thermal conductivity of the bonded layer. Specifically, vibration can be applied to the component using an ultrasonic vibration device or a mechanical vibration platform. Ultrasonic vibration is applied to the component at a frequency of 20-40 kHz. The vibration duration can be adjusted based on component size and solder thickness, for example, 30 seconds of vibration every 10 minutes for the entire annealing process. Mechanical vibration can be achieved using a low-frequency vibration platform (e.g., 10-100 Hz), with an amplitude controlled between 0.1 and 1 mm to avoid mechanical damage to the component. The frequency and intensity of the vibration must be optimized experimentally to maximize the improvement in the brazing layer. After annealing and vibration treatment, the resulting optimized brazed components exhibit significant improvements in microstructure and performance. Internal stress in the brazing layer is significantly reduced, interfacial bonding strength is enhanced, and thermal conductivity and mechanical stability are improved.

[0029] S6: depositing a diamond-like carbon film on the surface of the optimized brazing assembly under an inert atmosphere to obtain the heat dissipation assembly; In step S6, the process is carried out in an inert atmosphere to prevent oxidation or contamination of the optimized brazed component surface during deposition. Diamond-like carbon (DLC) film deposition is achieved using PECVD or magnetron sputtering techniques. PECVD allows for the deposition of high-quality films at relatively low temperatures (e.g., 100-300°C), avoiding thermal damage to the brazing layer or graphene interface of the optimized brazed component. During the PECVD process, a carbon source gas (e.g., methane or acetylene) is mixed with an inert gas (e.g., argon) and introduced into a vacuum chamber. Radio frequency or microwave plasma excitation dissociates the gas, generating carbon-containing radicals and ions. These radicals and ions then deposit on the component surface, forming the DLC film. To optimize film performance, the sp³ / sp² carbon bond ratio can be controlled by adjusting parameters such as plasma power, gas ratio, and deposition pressure. During deposition, plasma cleaning can be performed by introducing argon or hydrogen and applying a low-power plasma (e.g., 50-100 W). Cleaning typically lasts for 5-10 minutes. Deposition should begin immediately after cleaning to avoid secondary contamination of the component surface. The thickness of the DLC film needs to be controlled according to the application requirements of the heat dissipation component and can be controlled between 0.5 and 2 microns. A film that is too thick may cause internal stress accumulation and increase the risk of cracking, while a film that is too thin may not provide sufficient wear resistance and thermal conductivity. The deposition rate can be controlled by adjusting the plasma power and gas flow. For example, in PECVD equipment, the typical deposition rate is about 10-20nm / min, and it takes about 50-100 minutes to deposit a 1 micron thick film. In another embodiment, the performance of the DLC film can be further optimized by doping or multilayer structure design. For example, by introducing a small amount of silicon or nitrogen during the deposition process, Si-DLC or N-DLC films can be prepared, thereby reducing the internal stress of the film and improving its toughness, so that the final heat dissipation component has excellent heat dissipation performance, wear resistance and chemical stability.

[0030] In one embodiment, the silver-based solder comprises an alloy of silver, copper, and zirconium, wherein the mass percentage of silver is 85-95%, the mass percentage of copper is 3-10%, and the mass percentage of zirconium is 2-5%. The inert atmosphere is a combination of one or more of argon, nitrogen, or helium.

[0031] In this embodiment, a silver-based solder comprises an alloy of silver, copper, and zirconium, with silver as the primary component, which helps improve the overall performance of the heat dissipation component. The addition of copper lowers the solder's melting point, allowing it to melt and wet the substrate and fin surfaces at lower temperatures. Copper is also a good heat conductor, further enhancing the heat dissipation effect. The addition of zirconium improves the solder's wettability and oxidation resistance. Zirconium atoms form stable chemical bonds with carbon atoms on the graphene surface, promoting interfacial bonding. During the brazing process, zirconium also forms a dense protective oxide layer, effectively preventing oxidation at high temperatures. The specific ratio of the alloy components should be adjusted based on the actual application requirements. For example, for heat dissipation components requiring higher thermal conductivity, the silver content can be appropriately increased. For applications with strict brazing temperature restrictions, the melting point can be lowered by increasing the copper content. In this embodiment, the weight percentage of silver is controlled between 85% and 95%, the weight percentage of copper is 3% to 10%, and the weight percentage of zirconium is 2% to 5%. This ratio range ensures good wettability and strength while achieving excellent thermal conductivity and oxidation resistance. In addition, inert gases such as argon, nitrogen or helium can effectively remove oxygen and water vapor from the air, preventing the solder and graphene from oxidation or contamination at high temperatures, ensuring the smooth progress of the brazing process and the high quality of the final heat dissipation components.

[0032] In one embodiment, the step of placing the alloy substrate and the fin in a liquid nitrogen cooling environment and performing a graphene deposition process using methane as a carbon source to obtain the graphene-modified substrate and the fin comprises: Placing the alloy substrate and fins in an ultrasonic cleaning device and performing ultrasonic cleaning using a mixed solution of ethanol and deionized water to obtain clean substrates and fins; Cooling the clean substrate and fins by circulating liquid nitrogen to control the temperature to -190--200° C., thereby obtaining a low-temperature substrate and fins in an ultra-low temperature state; The low-temperature substrate and fins are placed in a vacuum environment, methane is introduced as a carbon source gas, and the methane gas is subjected to plasma-assisted cracking by a radio frequency plasma generator to form an activated carbon source; performing a deposition process on the low-temperature substrate and the fin according to the activated carbon source to form a primary graphene film; A low-temperature substrate and fins covered with a primary graphene film are placed in a reactor, and a trace amount of silane gas is introduced under an inert argon atmosphere to form a silicon-based passivation layer on the surface of the primary graphene film to obtain a graphene-modified substrate and fins.

[0033] In this embodiment, a high thermal conductivity alloy can be selected as the alloy substrate and fin material, which is placed in an ultrasonic cleaning device and ultrasonically cleaned with a mixed solution of ethanol and deionized water to remove surface oil and oxide layers. The cleaned substrate and fin are then transferred to a plasma cleaning chamber and subjected to low-temperature plasma bombardment treatment in an argon atmosphere. High-energy ion etching is used to further remove surface trace impurities and atomic-level defects, thereby obtaining a clean substrate and fin with a clean surface and atomically flat surface, providing a high-quality growth interface for subsequent graphene deposition. The clean substrate and fin are placed on a liquid nitrogen-cooled sample stage of a molecular beam epitaxy device. The sample stage temperature is precisely controlled at 77K (i.e., -190~-200°C) by a circulating liquid nitrogen cooling system. At the same time, high-purity nitrogen is introduced into the chamber to maintain a low-pressure environment. The low-temperature environment suppresses the thermal vibration of atoms on the substrate and fin surfaces, reduces the surface atomic mobility, and obtains a low-temperature substrate and fin in an ultra-low-temperature state, providing stable low-temperature growth conditions for the orderly deposition of graphene. In the molecular beam epitaxy device, the low-temperature substrate and fin are placed at 10 -8 Pa ultra-high vacuum environment, methane is introduced as a carbon source gas, and a radio frequency plasma generator is introduced to perform plasma-assisted cracking of the methane gas. By precisely controlling the plasma power and gas flow rate, the methane molecules are decomposed into highly active carbon atoms and carbon groups, obtaining a uniformly distributed active carbon source, and providing a high-quality carbon precursor for the single crystal growth of graphene. Based on the active carbon source, the initial graphene deposition treatment is carried out on the surface of the low-temperature substrate and the fin. By controlling the deposition rate of the molecular beam epitaxy equipment at 0.01nm / s, the methane flow rate and the cavity pressure are precisely adjusted, so that the active carbon atoms are orderly adsorbed on the surface of the low-temperature substrate and the fin and form an sp² bond structure, and a primary graphene film with a thickness of 1-2nm is deposited to obtain a primary graphene film substrate and fin with the surface covered with the primary graphene film. The primary graphene film substrate and the fin are transferred to a vacuum annealing chamber and annealed for 10 -6 Annealing treatment is carried out under vacuum conditions of 100 Pa and a temperature of 80-100°C. Low-temperature annealing promotes the rearrangement of carbon atoms in the primary graphene film, eliminates grain boundary defects and non-sp² bond structures, and introduces a trace amount of hydrogen during the annealing process to further repair the graphene crystal structure, resulting in an optimized graphene film substrate and fin with a complete crystal structure and a thickness of 3-5nm. The optimized graphene film substrate and fin are placed in a plasma-enhanced chemical vapor deposition device, and a trace amount of silane gas is introduced in an inert argon atmosphere. An ultra-thin silicon-based passivation layer is deposited on the surface of the optimized graphene film through low-temperature plasma excitation. The thickness of the passivation layer is controlled to be 0.5-1nm to protect the sp 2 The bond structure is formed and oxidation or contamination in subsequent processes is prevented, resulting in surface-stable graphene-modified substrates and fins, providing a high-quality interface for subsequent brazing material deposition.

[0034] In one embodiment, before the step of depositing a silver-based solder on the surface of the graphene-modified substrate and the fin, the method further comprises: Silver, copper, and zirconium alloy are used as basic raw materials to prepare a three-layer structure powder. The zirconium content of the first layer of powder close to the substrate is 6wt%, the zirconium content of the intermediate transition layer powder is 3wt%, and the zirconium content of the third layer of powder close to the fin side is 1wt%. The three-layer structure powder is pressed into shape under an argon protection environment, the pressing pressure is controlled at 200-250 MPa, and the holding time is 5-10 minutes to obtain a preliminary solder blank with a gradient structure; placing the preliminary solder blank in a sintering furnace and sintering it at a temperature of 600-650° C. to form a solder matrix; placing the solder matrix in a reactor, introducing methane and hydrogen into the reactor, and depositing a carbon nanotube film on the solder matrix to form a coating solder; The coating solder is dried and cooled to obtain the silver-based solder.

[0035] In this example, a three-layer powder structure composed of silver, copper, and zirconium alloy was prepared. The zirconium content in each layer was gradient: the first layer near the substrate had a zirconium content of 6wt%, the intermediate transition layer had a zirconium content of 3wt%, and the third layer near the fin had a zirconium content of 1wt%. This gradient design aims to balance the wettability, mechanical strength, and thermal expansion compatibility of the solder. Zirconium enhances the chemical bonding between the solder and the graphene-modified substrate, but excessive zirconium content may increase the solder's brittleness. To achieve this, powder metallurgy techniques were used to smelt silver, copper, and zirconium in specific proportions and then atomize the alloy powder. To prevent powder oxidation, the preparation process was carried out under high-purity argon gas, with the oxygen content controlled below 10 ppm. The three-layer powder was then pressed under an argon atmosphere at a pressure of 200-250 MPa for a dwell time of 5-10 minutes to produce a preliminary solder blank with a gradient structure. Cold pressing was then used to tightly bind the loose powder particles together, forming a solid blank with a certain strength while retaining the gradient structure. During the pressing process, a precision mold is used to ensure clear separation of the three powder layers and prevent interlayer mixing. For example, a three-layer sequential filling method can be used: first, a 6wt% zirconium powder is filled into the bottom of the mold. After leveling, a 3wt% zirconium transition layer powder is added, and finally, a 1wt% zirconium top layer powder is added. Subsequently, a hydraulic press is applied with a pressure of 230 MPa and maintained for 8 minutes. The preformed brazing material is placed in a sintering furnace and sintered at a temperature of 600-650°C to form the brazing material matrix. The sintering process promotes atomic diffusion and bonding between the powder particles, further densifying the blank while preserving the functional properties of the gradient structure. The sintering temperature should be selected based on the melting point of the silver-copper-zirconium alloy (approximately 800°C) and the activity of zirconium to avoid excessive temperatures that could cause premature liquid phase formation or zirconium volatilization. After sintering, the brazing material matrix is ​​placed in a reactor, where a carbon nanotube (CNT) film is deposited on its surface by passing methane and hydrogen gases to form a coated brazing material. Carbon nanotubes have excellent thermal conductivity (approximately 2000 W / (m·K)) and mechanical strength, significantly improving the wettability and interfacial bonding of the solder surface. The deposition process utilizes chemical vapor deposition (CVD) technology. The solder substrate is heated to 700-800°C in a reactor while methane is introduced as a carbon source and hydrogen as a catalyst and shielding gas, with a gas flow ratio of 1:4. The resulting film is uniform on the surface, with the carbon nanotubes oriented vertically, enhancing both the thermal conductivity and wettability of the solder surface. The coated solder is then dried and cooled to yield the final silver-based solder. The drying process, designed to remove any moisture or volatile impurities that may remain during the deposition process, is carried out in a vacuum drying oven at a temperature of 100-150°C for 1-2 hours. The solder is then slowly cooled to room temperature under argon protection to avoid thermal stress, resulting in a solder with a gradient structure and excellent performance.

[0036] In one embodiment, the step of depositing a silver-based solder on the surface of the graphene-modified substrate and the fin, and introducing a pulsed airflow at predetermined intervals to disturb the solder atoms to obtain a core substrate and a fin with a solder nanocrystalline core layer distributed on the surface, comprises: The graphene modified substrate and fin are subjected to zoned preheating treatment, the temperature of the central area is controlled at 130-150° C., the temperature of the edge area is controlled at 100-110° C., the heating rate is maintained at 2-3° C. / min, and the preheating time is 10-15 minutes to obtain a preheated graphene substrate and fin; Depositing a silver-based solder on the preheated graphene substrate and fins at a deposition temperature of 110-130° C. to form a thin layer of silver-based solder on the graphene surface to obtain a deposited substrate and fins; During the deposition process, argon pulse flow is periodically introduced for disturbance. The pulse period is 0.4~0.6 seconds, the air flow pressure fluctuation range is 0.015~0.025Pa, and the single pulse duration is 0.1~0.2 seconds. This causes the silver-based solder atoms to be densely distributed along the graphene surface to form nano-scale crystal nuclei, obtaining a crystal core substrate and fins.

[0037] In this example, the graphene-modified substrate and fins were preheated in zones, with the center temperature controlled at 130-150°C and the edge temperature at 100-110°C. The heating rate was maintained at 2-3°C / minute, and the preheating time was 10-15 minutes, resulting in a preheated graphene substrate and fin. Zoned preheating optimizes the atomic activity of the graphene surface through a non-uniform temperature field. Higher temperatures in the center (e.g., 140°C) enhance the chemical activity of the graphene surface and promote the adsorption of solder atoms, while lower temperatures in the edge regions (e.g., 105°C) prevent damage to the graphene structure caused by overheating. A vacuum chamber equipped with zoned heating can be used in conjunction with a gradient solder. Because the first layer (6wt% zirconium) near the substrate has a higher chemical activity, high-temperature preheating in the center further enhances its interfacial bonding with graphene. While the third layer (1wt% zirconium) near the fin maintains good wettability at lower temperatures, the gradient solder exhibits excellent adaptability under zoned preheating conditions. Silver-based solder is deposited onto a preheated graphene substrate and fins, with the deposition temperature controlled between 110 and 130°C. A thin layer of silver-based solder forms on the graphene surface, resulting in a deposited substrate and fins. This step is achieved through physical vapor deposition or chemical vapor deposition techniques, forming a uniform thin layer of solder on the graphene surface. The resulting silver-based solder layer, approximately 100 to 200 nm thick, combines the properties of a gradient solder with a three-layer structure (6wt%, 3wt%, and 1wt% zirconium) that can be achieved through step-by-step sputtering during the deposition process. First, a high-zirconium content layer is sputtered to enhance chemical bonding with graphene, followed by deposition of a low-zirconium content layer to optimize wettability. Furthermore, a carbon nanotube film coated on the surface of the gradient solder acts as an interface enhancement layer during the deposition process, further enhancing the bonding strength between the thin layer and graphene. During the deposition process, argon gas pulses are periodically introduced for disturbance. The pulse period is 0.4 to 0.6 seconds, the pressure fluctuation range is 0.015 to 0.025 Pa, and the duration of a single pulse is 0.1 to 0.2 seconds. This allows silver-based solder atoms to be densely distributed along the graphene surface, forming nanoscale nuclei, resulting in a core substrate and fins. The principle of pulsed flow disturbance is to disrupt the deposition path of solder atoms through periodic pressure fluctuations, inducing them to form a high density of nanocrystalline nuclei (approximately 5 to 20 nm in diameter) on the graphene surface, thereby improving the crystallinity of the thin layer. The carbon nanotube coating, under pulsed flow disturbance, acts as a template for nucleation growth. The tubular structure of the carbon nanotubes provides additional nucleation sites for solder atoms, resulting in smaller nuclei (approximately 5 to 10 nm) and more uniform distribution. Combining the above steps, the combination of the deposition process and the gradient solder significantly improves the properties of the core substrate and fins, making the solder thin layer have higher crystallinity and interfacial activity. The resulting core substrate and fins exhibit excellent wettability, thermal conductivity and mechanical strength in vacuum brazing.

[0038] In one embodiment, the step of placing the core substrate and the fin in an alignment fixture, placing the alignment fixture in a vacuum brazing furnace, and performing alignment processing on the core substrate and the fin includes: The carbon fiber fixture is used to pre-align the core substrate and the fin to obtain a preliminary alignment assembly; Placing the preliminary alignment assembly in a vacuum brazing furnace, evacuating the vacuum brazing furnace, and slowly introducing pure argon gas during the vacuuming process; The gap between the core substrate and the fin is monitored by a laser interferometer, and the gap deviation between the core substrate and the fin is controlled within ±0.3-0.5 μm; The temperature in the vacuum brazing furnace is controlled to rise to 150-200°C at a heating rate of 0.5-1°C / min and maintained for 10-15 minutes to complete the alignment process.

[0039] In this embodiment, the crystal core substrate and the fins are placed in an alignment fixture, specifically a carbon fiber fixture. The surface of the fixture has a micron-scale corrugated structure (wavelength 50μm, amplitude 5μm). The wavelength and amplitude of the corrugated structure determine the distribution of microscopic contact points when the fixture surface contacts the substrate and the fins. Through the action of capillary force, the contact pressure can be accurately adjusted to the range of 0.02-0.1MPa. The capillary force originates from the tiny liquid film or surface tension effect between the tiny corrugations on the fixture surface and the substrate and fin surfaces. This mechanical control mechanism can ensure that the substrate and the fins maintain a preliminary stable alignment during the clamping process without applying excessive mechanical pressure. After the preliminary alignment assembly is placed in a vacuum brazing furnace, the furnace is evacuated, and pure argon is slowly introduced during the vacuum process. While removing the air and impurities in the furnace, a stable inert gas environment is maintained to avoid oxidation or other chemical reactions on the surface of the substrate and the fins. The vacuuming process can be achieved by a high-performance vacuum pump, and the pressure in the furnace is gradually reduced to 10 -3Pa or less to exclude air molecules. Subsequently, pure argon gas is slowly introduced to prevent oxidation of the material surface. A laser interferometer is used to monitor the gap between the core substrate and the fins, and the gap deviation is controlled within the range of ±0.3~0.5μm. The laser interferometer measures the slight distance changes between the substrate and the fins by emitting a high-precision laser beam. In actual operation, the laser interferometer scans multiple key points of the preliminary alignment components in real time, generates gap distribution data, and adjusts the fine-tuning mechanism of the fixture through a feedback control system. For example, when it is detected that the gap deviation in a certain area exceeds 0.5μm, a small mechanical force is applied or the angle of the fixture is adjusted through the micro-actuator inside the fixture to return the gap between the substrate and the fin to the target range. Finally, a heating step is performed in the vacuum brazing furnace, where the temperature inside the furnace is raised to 150-200°C at a heating rate of 0.5-1°C / min and maintained for 10-15 minutes to complete the alignment process. The heat treatment process aims to further stabilize the relative position of the substrate and the fins through gentle temperature changes. The low thermal expansion coefficient of the carbon fiber fixture plays an important role in this. Its thermal deformation is extremely small, which can effectively reduce the impact of temperature changes on clamping accuracy. After heating to 150-200°C, the temperature is maintained for 10-15 minutes. The purpose is to allow the substrate and fins to fully adapt to the thermal equilibrium state under the constraints of the fixture, ensuring that the gap deviation remains within the range of ±0.3-0.5μm after thermal expansion. After the insulation is completed, the temperature inside the furnace will gradually cool down, completing the entire alignment process.

[0040] In one embodiment, reference Figure 2 , the control vacuum brazing furnace starts brazing, and the vacuum degree inside the vacuum brazing furnace is set to be lower than 10 -5 Pa, promoting the interfacial bonding between graphene and the brazing material to form an initial brazing assembly, comprising: S41: In the vacuum brazing furnace, place the core substrate and fins in the positioning fixture in a vacuum of less than 10 -5 Pa environment, heating brazing was carried out in multiple stages. In the first stage, the temperature was raised from room temperature to 350 °C at a heating rate of 2.5 °C / min and kept at 350 °C for 25 minutes. S42: In the second stage, the temperature was raised from 350°C to 600°C in a vacuum brazing furnace at a heating rate of 1.8°C / min, and a periodic triangular wave temperature fluctuation was applied with an amplitude of ±8°C and a frequency of 0.08 Hz, and the temperature was kept at this temperature for 18 minutes. S43: In the third stage, the temperature was raised from 600°C to 680°C at a rate of 1.2°C / min. Low-frequency sinusoidal temperature fluctuations were applied at 680°C with an amplitude of ±12°C and a frequency of 0.05 Hz. The temperature was kept at this temperature for 12 minutes to allow the solder molecules to migrate along the graphene interface for filling. S44: In the vacuum brazing furnace, the temperature was lowered from 670℃ to 300℃ at a rate of 0.8℃ / min, and the vacuum degree in the vacuum brazing furnace was increased to 10 -5 Pa to 10 -6 The Pa cycle was switched and the temperature was kept at 300 °C for 22 minutes to form the initial brazed assembly.

[0041] In this embodiment, there are several stages. In the first stage, the core substrate and the fin in the positioning fixture are placed in a vacuum furnace with a vacuum degree of less than 10 -5 In a Pa environment, the temperature was ramped from room temperature to 350°C at a rate of 2.5°C / min and held at 350°C for 25 minutes. A high-precision infrared thermometer was used to monitor the temperature in real time, ensuring that the temperature deviation was within ±0.3°C. This low-temperature preheating initially activated the solder nanocrystal core layer on the core substrate and fin surfaces, enhancing the initial interface contact between graphene and solder atoms, resulting in a preheated core assembly. In the second stage, based on the thermodynamic state of the preheated core assembly, the temperature was increased from 350°C to 600°C in a vacuum brazing furnace at a rate of 1.8°C / min. Periodic triangular wave temperature fluctuations were applied with an amplitude of ±8°C and a frequency of 0.08Hz, and the temperature was held for 18 minutes. Simultaneously, a pulsed micro-injection of argon (at a frequency of 0.2Hz and a pressure of 0.01Pa) was used to perturb the furnace thermal field, promoting the directional migration of the solder nanocrystal cores along the graphene surface and strengthening the chemical bonding at the graphene-solder interface, resulting in a highly active interface-activated assembly. In the vacuum brazing furnace, in the third stage, the interface activation component was heated from 600°C to 680°C at a heating rate of 1.2°C / min, and low-frequency sinusoidal temperature fluctuations were applied at 680°C with an amplitude of ±12°C and a frequency of 0.05Hz. The temperature was kept at this temperature for 12 minutes. At the same time, an alternating magnetic field (intensity 0.1T, frequency 0.1Hz) was applied through a magnetic field induction device to induce the orderly flow of solder molecules on the graphene interface, filling the tiny gap between the crystal core substrate and the fins, reducing the interface pores, forming a uniform brazing connection layer, and obtaining a flow brazing component. According to the state of the brazing connection layer of the flow brazing assembly, the temperature is maintained at 670℃ in the vacuum brazing furnace, and composite temperature vibration (superposition of sine wave and square wave, amplitude ±10℃, frequency 0.03Hz) is applied for 15 minutes. At the same time, low-power ultrasonic vibration (power 50W, frequency 20kHz) is applied by an ultrasonic generator to promote the rearrangement and refinement of grains in the brazing connection layer, enhance the interface bonding strength between graphene and brazing material, reduce micro stress concentration, and obtain grain optimized components. In the vacuum brazing furnace, the grain optimized component is cooled from 670℃ to 300℃ at a cooling rate of 0.8℃ / min and kept at 300℃ for 22 minutes. At the same time, the temperature is adjusted periodically by micro pressure (vacuum degree is 10 -5 Pa to 10 -6Pa periodically switched, with a cycle of 10 minutes), to stabilize the microstructure of the brazed connection layer, prevent the accumulation of thermal stress caused by rapid cooling, ensure the long-term bonding stability of the graphene-brass interface, and obtain a stable brazed assembly. Based on the microstructural state of the stabilized brazed assembly, the temperature was cooled from 300°C to 200°C in a vacuum brazing furnace at a cooling rate of 0.5°C / min and maintained at 200°C for 30 minutes. At the same time, the brazed connection layer was perturbated by a low-frequency electromagnetic field (intensity 0.05T, frequency 0.01Hz) to promote the final solidification of the brazing material crystals, optimize the atomic-level bonding between the graphene and the brazing material interface, and form a brazed structure with high thermal conductivity and mechanical strength to obtain the initial brazed assembly.

[0042] In another embodiment, the step of applying low-frequency sinusoidal temperature fluctuations comprises: Real-time data acquisition and preprocessing are performed on the multidimensional temperature sensor array in the vacuum brazing furnace to obtain a standardized temperature dataset. A multidimensional temperature sensor array composed of thermocouples and infrared temperature measurement units is arranged in the vacuum brazing furnace, covering the upper and lower surfaces of the core substrate and fins and the surrounding areas. Temperature data is collected at a sampling frequency of 100 times per second, and the collected raw data stream is preprocessed. The preprocessing process includes removing high-frequency noise through a sliding window filtering algorithm with a window width set to 0.2 seconds. At the same time, the periodic characteristics of the temperature data are extracted using frequency domain analysis based on Fourier transform. The three-dimensional temperature distribution matrix is ​​generated by combining the geometric contours of the core substrate and fins. The matrix is ​​then normalized and the temperature values ​​are mapped to the range of 0 to 1 to generate a standardized temperature dataset that can reflect the dynamic thermal state of the brazing area.

[0043] The partitioned temperature control system is processed by an adaptive fuzzy control algorithm according to the standardized temperature data set to obtain a dynamic temperature control instruction set; based on the standardized temperature data set, an adaptive fuzzy control algorithm model is constructed. The algorithm takes the gradient change and time series fluctuation of the temperature distribution matrix as input, and defines a fuzzy rule set containing 128 rules. Each rule combines three variables: temperature deviation, deviation change rate, and solder molecule migration rate. The fuzzy membership function adopts a mixed form of triangle and trapezoid. The power regulation coefficient of each partitioned micro-heating unit is calculated through fuzzy reasoning. The output power coefficient is defuzzified to form a discrete instruction sequence. The instruction sequence is updated every 0.1 second, and the response time and output intensity of each partitioned heating unit are dynamically adjusted according to the real-time heat load difference between the crystal core substrate and the fins, generating a dynamic temperature control instruction set that can accurately control temperature fluctuations.

[0044] The airflow circulation system is subjected to multi-scale perturbation optimization processing according to the dynamic temperature control instruction set to obtain an adaptive airflow distribution field. The dynamic temperature control instruction set is used to drive the airflow circulation system in the vacuum brazing furnace, and the injection behavior of the inert gas nozzle array is controlled by the multi-scale perturbation optimization algorithm. First, the heat flux density distribution on the surface of the core substrate and fin is calculated based on the standardized temperature data set. The brazing area is discretized into 1024 tiny units using the fin element meshing method. The heat flux density of each unit is iteratively updated in real time. Subsequently, the injection angle, flow rate and frequency of the nozzle array are determined by the particle swarm optimization algorithm. The injection parameters are output in the form of a superposition of high-frequency pulses (10 Hz) and low-frequency oscillations (0.1 Hz). The airflow disturbance trajectory is smoothed by the Lagrangian interpolation method, so that the airflow forms a complex flow pattern of alternating non-uniform vortices and laminar flows in the brazing area, generating an adaptive airflow distribution field that can dynamically respond to temperature changes.

[0045] The partitioned temperature control system is dynamically loaded with low-frequency sinusoidal waves according to the adaptive airflow distribution field to obtain a spatiotemporal coordinated fluctuating temperature field. Based on the adaptive airflow distribution field, the partitioned temperature control system is driven to execute a low-frequency sinusoidal dynamic loading algorithm. With the dynamic temperature control instruction set as the initial condition, the sinusoidal wave fluctuation amplitude is set to ±12°C and the frequency is set to 0.05Hz. The sinusoidal wave phase of each partitioned micro-heating unit is optimized using a genetic algorithm. The optimization goal is to minimize the temperature gradient in the brazing area. The equation is constrained by the second-order derivative of the temperature distribution matrix, and the phase difference is dynamically adjusted between 5° and 15°. The algorithm iterates every 0.5 seconds. Combined with the thermal conductivity characteristics of the adaptive airflow distribution field, the migration rate of the solder molecules at the graphene interface is predicted by numerical simulation methods. In each iteration, the amplitude and frequency of the sinusoidal wave are perturbated within the range of ±0.5°C and ±0.005Hz, so that the temperature fluctuation exhibits spatiotemporal coordinated characteristics on the surface of the core substrate and the fin, generating a spatiotemporal coordinated fluctuating temperature field covering the entire brazing area.

[0046] The spatiotemporal coordinated fluctuating temperature field was subjected to multi-cycle thermal shock and molecular dynamics simulation to obtain a strengthened interface bonding layer. In the spatiotemporal coordinated fluctuating temperature field, a multi-cycle thermal shock was applied to the brazing area based on the molecular dynamics simulation algorithm. The algorithm first constructed a three-dimensional atomic model containing graphene, brazing material molecules and substrate atoms. The model contains about 10 6atoms, the Lennard-Jones potential function was used to describe the interactions between atoms, and the atomic motion trajectories were calculated by the Verlet integration method. Each cycle of thermal shock included instantaneous heating to 690°C (for 2 seconds) and liquid nitrogen jet cooling to 660°C (for 4 seconds). The shock cycle was repeated 12 times. The diffusion coefficient and interfacial binding energy of the solder molecules were updated in real time during the simulation. After each shock, the atomic positions were optimized by the Monte Carlo method, so that the solder molecules migrated directionally along the graphene interface and filled the nanoscale gaps. At the same time, the dynamic heat flow of the spatiotemporal coordinated fluctuating temperature field was combined to generate a reinforced interface bonding layer with enhanced interface bonding strength.

[0047] The surface of the brazed component is plasma-assisted microstructure optimized based on the strengthened interface bonding layer to obtain a high-stability initial brazed component. The structural characteristics of the strengthened interface bonding layer are used to drive the plasma-assisted microstructure optimization algorithm to treat the surface of the brazed component. The algorithm uses the atomic distribution data of the strengthened interface bonding layer as input and predicts the distribution of microstructural defects on the solder surface through a deep neural network model. The model contains 5 convolutional layers and 3 fully connected layers. The training dataset is based on the surface morphology data of historical brazing experiments. The prediction results are used to control the bombardment parameters of the low-energy inert gas plasma beam. The bombardment angle varies periodically between 30° and 60°. The beam energy is optimized using a gradient descent algorithm with the optimization goal of minimizing surface roughness. At the same time, a periodic magnetic field deflection is applied, and the magnetic field intensity fluctuates with a period of 0.02T, so that the nanocrystalline nuclei on the solder surface are rearranged to form an ordered micro-bump array. Residual gas-phase impurities are removed by plasma cleaning to produce a high-stability initial brazed component with a smooth surface and stable interface bonding.

[0048] In one embodiment, reference Figure 3 The step of annealing the initial brazing assembly and applying vibration to the initial brazing assembly during the annealing process to obtain an optimized brazing assembly comprises: S51: heating the initial brazing assembly to 350° C. at a heating rate of 1° C. / min in a vacuum brazing furnace, and applying low-frequency sinusoidal vibration with a frequency of 0.02 Hz and an amplitude of 0.05 μm, wherein the vibration is transmitted to the preheated brazing assembly through a fixture to form a preliminary annealed assembly; S52: continuing to heat the preliminary annealing assembly to 400° C. at a heating rate of 0.8° C. / min while pausing vibration, to obtain a high-temperature annealing assembly; S53: reducing the temperature of the high-temperature annealing component to 300° C. at a cooling rate of 0.6° C. / min, and reapplying triangular wave vibration with a frequency of 0.015 Hz and an amplitude of 0.08 μm to obtain a vibration-optimized component; S54: Slowly cool the vibration optimization component to room temperature at a cooling rate of 0.4°C / min, and maintain the vacuum degree below 10 during the cooling process. -5 Pa, and applied low-frequency vibration with a frequency of 0.01 Hz and an amplitude of 0.03 μm to obtain the optimized brazed assembly.

[0049] In this embodiment, the initial brazing assembly is placed in a temperature gradient controlled environment in a vacuum brazing furnace, and the initial brazing assembly is heated from room temperature to 200°C at a heating rate of 0.5°C / min by an infrared radiation heater, and kept at this temperature for 30 minutes, while a small amount of argon is introduced to maintain the pressure in the furnace at 10 -4 Pa, which promotes the initial release of residual stress at the interface between graphene and solder inside the initial brazing component, and obtains a preheated brazing component with uniform temperature and stable interface. The preheated brazing component is fixed on an electromagnetic vibration table and heated to 350°C at a heating rate of 1°C / min in a vacuum brazing furnace. A low-frequency sinusoidal vibration with a frequency of 0.02Hz and an amplitude of 0.05μm is applied. The vibration is evenly transmitted to the preheated brazing component through the fixture and kept warm for 3 hours. The vibration induces a small displacement of atoms in the nanocrystalline core layer of the solder, promotes the diffusion and reorganization of the silver-based solder at the grain boundary, and obtains a primary annealed component with preliminary grain boundary optimization. In the vacuum brazing furnace, the primary annealed component is further heated to 400°C at a heating rate of 0.8°C / min and kept warm for 2 hours, during which the vacuum degree is kept below 10 -5 Pa, through the partition temperature control system to ensure that the temperature difference between the surface and the interior of the primary annealing component is less than 5°C, while suspending vibration to avoid grain boundary cracks caused by vibration at high temperature. The annealing process allows the solder nuclei in the primary annealing component to further grow and form a denser bonding structure with the graphene interface, resulting in a high-temperature annealing component. The temperature of the high-temperature annealing component is reduced to 300°C at a cooling rate of 0.6°C / min, and dynamic triangular wave vibration with a frequency of 0.015Hz and an amplitude of 0.08μm is reapplied. The vibration acts on the high-temperature annealing component through a multi-point contact fixture for 1 hour. Dynamic vibration promotes the orderly rearrangement of atoms at the grain boundaries of the high-temperature annealing component, optimizes the microscopic bonding strength of the solder and graphene interface, and suppresses the micropore defects that may form at the grain boundaries, resulting in a vibration-optimized component. The vibration optimization component was maintained at a constant temperature of 280°C for 1.5 hours. During this period, the temperature fluctuation was kept within ±2°C by a high-precision temperature control system. At the same time, a small amount of helium was introduced to improve the heat conduction efficiency. The constant temperature process further stabilized the grain boundary structure inside the vibration optimization component, and the interface bonding between the nanocrystalline core of the solder and the graphene tended to be uniform, eliminating the local stress that may have remained during the annealing process, and obtaining a stable brazed component with a stable structure. The stable brazed component was slowly cooled to room temperature at a cooling rate of 0.4°C / min, and the vacuum degree was kept below 10 during the cooling process. -5Pa, and applied ultra-low frequency vibration with a frequency of 0.01 Hz and an amplitude of 0.03 μm. The vibration was transmitted to the stable brazing assembly through the flexible fixture. Slow cooling combined with ultra-low frequency vibration further optimized the atomic arrangement at the grain boundary, enhanced the long-term stability of the interface between the solder and graphene, and finally obtained an optimized brazing assembly with excellent interface bonding performance.

[0050] In one embodiment, the step of depositing a diamond-like carbon film on the surface of the optimized brazing assembly under an inert atmosphere to obtain the heat dissipation assembly includes: In an inert argon atmosphere, using silane and methane as reaction gases, a silicon-carbon transition layer is deposited on the surface of the optimized brazing assembly. During the deposition process, the chamber temperature is controlled at 150-200° C. and the gas pressure is controlled at 0.3-0.6 Pa. The silicon-carbon transition layer is used as a substrate, methane and argon are introduced as reaction gases, the ratio of methane to argon is 1:4, and a diamond-like carbon film is deposited on the surface of the transition layer substrate by radio frequency plasma excitation. The chamber temperature during the deposition process is 200-250°C, the gas pressure is 0.2-0.5 Pa, and the radio frequency power is 200-250W; In the deposition chamber, a pulsed DC bias is applied to the silicon-carbon transition layer, carbon ions in the plasma are guided to bombard the substrate surface in a direction based on the bias electric field, and the bombarded substrate is polished to obtain the heat dissipation component.

[0051] In this embodiment, the optimized brazing assembly is transferred to a plasma-assisted chemical vapor deposition device. In an inert argon atmosphere, silane and methane are used as reaction gases, and a silicon-carbon transition layer with a thickness of 50 to 100 nanometers is deposited on the surface of a clean substrate by low-power plasma excitation. During the deposition process, the chamber temperature is controlled to 150 to 200°C, the gas pressure is 0.3 to 0.6 Pa, and the ratio of argon to reaction gas is 3:1 to ensure good chemical bonding between the transition layer and the substrate surface, while providing a lattice matching interface for the subsequent diamond-like carbon film, thereby obtaining a transition layer substrate with a silicon-carbon transition layer. In the plasma-assisted chemical vapor deposition equipment, with the transition layer substrate as the base, methane and argon are introduced as reaction gases, and the ratio of methane to argon is controlled at 1:4. A diamond-like carbon film with a thickness of 0.2~0.3 microns is deposited on the surface of the transition layer substrate by radio frequency plasma excitation. During the deposition process, the chamber temperature is maintained at 200~250℃, the gas pressure is 0.2~0.5Pa, and the radio frequency power is 200~250W to form a dense primary diamond-like carbon film structure, thereby obtaining a primary DLC substrate with a primary DLC film covered on the surface. In the deposition chamber, a pulsed DC bias is applied to the primary DLC substrate. The bias electric field is used to guide the carbon ions in the plasma to bombard the surface of the primary DLC substrate in a directional manner. The pulse bias frequency is 100-150kHz, the voltage is ~200 to ~300V, and the duty cycle is 60-80%. This ion bombardment enhances the sp³ carbon bond ratio of the diamond-like carbon film and improves the internal stress and surface flatness of the film. The treatment time is 10-15 minutes, resulting in a reinforced DLC substrate with high hardness and low stress. In the plasma-assisted chemical vapor deposition equipment, diamond-like carbon film deposition is continued on the strengthened DLC substrate. By dynamically adjusting the ratio of methane to argon from 1:4 to 1:2, and gradually reducing the RF power from 200W to 150W, 3 to 5 layers of diamond-like carbon film with a thickness of 0.1 to 0.15 microns are deposited. The deposition time of each layer is 5 to 8 minutes. The gas pressure is maintained at 0.3 to 0.5 Pa and the temperature is 220 to 250°C to form a multilayer structure with a gradient sp³ / sp² carbon bond ratio, thereby obtaining a multilayer DLC substrate with excellent wear resistance. The multilayer DLC substrate is transferred to a plasma polishing chamber with an inert atmosphere, and the surface is polished using low-pressure argon plasma combined with a trace amount of oxygen. During the polishing process, the gas pressure is controlled at 0.1~0.2Pa, the radio frequency power is 80~120W, the ratio of oxygen to argon is 1:10, and the polishing time is 3~5 minutes. The microscopic protrusions and defects on the surface of the multilayer DLC substrate are removed by plasma etching to form a smooth and uniform diamond-like carbon film surface, thereby obtaining the final heat dissipation component.

[0052] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A vacuum brazing process for heat dissipation components, characterized in that: include: The alloy substrate and fins are placed in a liquid nitrogen cooling environment, and graphene is deposited using methane as a carbon source to obtain graphene-modified substrates and fins; Depositing silver-based solder on the surface of the graphene-modified substrate and fins, and introducing pulsed airflow at preset intervals to disturb the solder atoms, thereby obtaining a core substrate and fins with a solder nanocrystalline core layer distributed on the surface; Placing the crystal core substrate and the fins in an alignment fixture, placing the alignment fixture in a vacuum brazing furnace, and performing alignment processing on the crystal core substrate and the fins; Control the vacuum brazing furnace to start brazing, and set the vacuum degree inside the vacuum brazing furnace to be lower than 10 -5 Pa, promotes the interfacial bonding between graphene and brazing filler metal to form the initial brazed assembly; performing an annealing treatment on the initial brazing assembly, and applying vibration to the initial brazing assembly during the annealing process to obtain an optimized brazing assembly; Under an inert atmosphere, a diamond-like carbon film is deposited on the surface of the optimized brazing assembly to obtain the heat dissipation assembly.

2. The vacuum brazing process of the heat dissipation assembly according to claim 1, characterized in that: The silver-based solder comprises an alloy consisting of silver, copper and zirconium, wherein the mass percentage of silver is 85-95%, the mass percentage of copper is 3-10%, and the mass percentage of zirconium is 2-5%.

3. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The inert atmosphere is one or more of argon, nitrogen or helium.

4. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The step of placing the alloy substrate and the fin in a liquid nitrogen cooling environment and performing graphene deposition treatment using methane as a carbon source to obtain the graphene-modified substrate and the fin comprises: Placing the alloy substrate and fins in an ultrasonic cleaning device and performing ultrasonic cleaning using a mixed solution of ethanol and deionized water to obtain clean substrates and fins; Cooling the clean substrate and fins by circulating liquid nitrogen to control the temperature to -190--200° C., thereby obtaining a low-temperature substrate and fins in an ultra-low temperature state; The low-temperature substrate and fins are placed in a vacuum environment, methane is introduced as a carbon source gas, and the methane gas is subjected to plasma-assisted cracking by a radio frequency plasma generator to form an activated carbon source; performing a deposition process on the low-temperature substrate and the fin according to the activated carbon source to form a primary graphene film; A low-temperature substrate and fins covered with a primary graphene film are placed in a reactor, and a trace amount of silane gas is introduced under an inert argon atmosphere to form a silicon-based passivation layer on the surface of the primary graphene film to obtain a graphene-modified substrate and fins.

5. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: Before the step of depositing silver-based solder on the surface of the graphene-modified substrate and the fin, the method further comprises: Silver, copper, and zirconium alloy are used as basic raw materials to prepare a three-layer structure powder. The zirconium content of the first layer of powder close to the substrate is 6wt%, the zirconium content of the intermediate transition layer powder is 3wt%, and the zirconium content of the third layer of powder close to the fin side is 1wt%. The three-layer structure powder is pressed into shape under an argon protection environment, the pressing pressure is controlled at 200-250 MPa, and the holding time is 5-10 minutes to obtain a preliminary solder blank with a gradient structure; placing the preliminary solder blank in a sintering furnace and sintering it at a temperature of 600-650° C. to form a solder matrix; placing the solder matrix in a reactor, introducing methane and hydrogen into the reactor, and depositing a carbon nanotube film on the solder matrix to form a coating solder; The coating solder is dried and cooled to obtain the silver-based solder.

6. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The step of depositing silver-based solder on the surface of the graphene-modified substrate and fins, and introducing pulsed airflow at preset intervals to disturb the solder atoms to obtain a core substrate and fins with a solder nanocrystalline core layer distributed on the surface includes: The graphene modified substrate and fin are subjected to zoned preheating treatment, the temperature of the central area is controlled at 130-150° C., the temperature of the edge area is controlled at 100-110° C., the heating rate is maintained at 2-3° C. / min, and the preheating time is 10-15 minutes to obtain a preheated graphene substrate and fin; Depositing a silver-based solder on the preheated graphene substrate and fins at a deposition temperature of 110-130° C. to form a thin layer of silver-based solder on the graphene surface to obtain a deposited substrate and fins; During the deposition process, argon pulse flow is periodically introduced for disturbance. The pulse period is 0.4~0.6 seconds, the air flow pressure fluctuation range is 0.015~0.025Pa, and the single pulse duration is 0.1~0.2 seconds. This causes the silver-based solder atoms to be densely distributed along the graphene surface to form nano-scale crystal nuclei, obtaining a crystal core substrate and fins.

7. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The step of placing the core substrate and the fin in an alignment fixture, placing the alignment fixture in a vacuum brazing furnace, and performing alignment processing on the core substrate and the fin includes: The carbon fiber fixture is used to pre-align the core substrate and the fin to obtain a preliminary alignment assembly; Placing the preliminary alignment assembly in a vacuum brazing furnace, evacuating the vacuum brazing furnace, and slowly introducing pure argon gas during the vacuuming process; The gap between the core substrate and the fin is monitored by a laser interferometer, and the gap deviation between the core substrate and the fin is controlled within ±0.3-0.5 μm; The temperature in the vacuum brazing furnace is controlled to rise to 150-200°C at a heating rate of 0.5-1°C / min and maintained for 10-15 minutes to complete the alignment process.

8. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The control vacuum brazing furnace starts brazing, and the vacuum degree inside the vacuum brazing furnace is set to be lower than 10 -5 Pa, promoting the interfacial bonding between graphene and the brazing material to form an initial brazing assembly, comprising: In the vacuum brazing furnace, place the core substrate and fins in the positioning fixture in a vacuum of less than 10 -5 Pa environment, heating brazing was carried out in multiple stages. In the first stage, the temperature was raised from room temperature to 350 °C at a heating rate of 2.5 °C / min and kept at 350 °C for 25 minutes. In the second stage, the temperature was raised from 350°C to 600°C in a vacuum brazing furnace at a heating rate of 1.8°C / min, and periodic triangular wave temperature fluctuations were applied with an amplitude of ±8°C and a frequency of 0.08 Hz, and the temperature was kept at this temperature for 18 minutes. In the third stage, the temperature was raised from 600°C to 680°C at a rate of 1.2°C / min. Low-frequency sinusoidal temperature fluctuations were applied at 680°C with an amplitude of ±12°C and a frequency of 0.05 Hz for 12 minutes to allow the solder molecules to migrate along the graphene interface for filling. In the vacuum brazing furnace, the temperature was lowered from 670℃ to 300℃ at a rate of 0.8℃ / min, and the vacuum degree in the vacuum brazing furnace was increased to 10 -5 Pa to 10 -6 The Pa cycle was switched and the temperature was kept at 300 °C for 22 minutes to form the initial brazed assembly.

9. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The step of annealing the initial brazing assembly and applying vibration to the initial brazing assembly during the annealing process to obtain an optimized brazing assembly includes: The initial brazing assembly is heated to 350° C. in a vacuum brazing furnace at a heating rate of 1° C. / min, and low-frequency sinusoidal vibration with a frequency of 0.02 Hz and an amplitude of 0.05 μm is applied, and the vibration is transmitted to the preheated brazing assembly through a fixture to form a preliminary annealed assembly; The preliminary annealed component is further heated to 400° C. at a heating rate of 0.8° C. / min while pausing vibration to obtain a high-temperature annealed component; The temperature of the high-temperature annealing component was reduced to 300° C. at a cooling rate of 0.6° C. / min, and triangular wave vibration with a frequency of 0.015 Hz and an amplitude of 0.08 μm was reapplied to obtain a vibration-optimized component. The vibration optimization assembly was slowly cooled to room temperature at a cooling rate of 0.4°C / min, and the vacuum degree was kept below 10 -5 Pa, and applied low-frequency vibration with a frequency of 0.01 Hz and an amplitude of 0.03 μm to obtain the optimized brazed assembly.

10. The vacuum brazing process for heat dissipation components according to claim 1, characterized in that: The step of depositing a diamond-like carbon film on the surface of the optimized brazing assembly under an inert atmosphere to obtain the heat dissipation assembly comprises: In an inert argon atmosphere, using silane and methane as reaction gases, a silicon-carbon transition layer is deposited on the surface of the optimized brazing assembly. During the deposition process, the chamber temperature is controlled at 150-200° C. and the gas pressure is controlled at 0.3-0.6 Pa. The silicon-carbon transition layer is used as a substrate, methane and argon are introduced as reaction gases, the ratio of methane to argon is 1:4, and a diamond-like carbon film is deposited on the surface of the transition layer substrate by radio frequency plasma excitation. The chamber temperature during the deposition process is 200-250°C, the gas pressure is 0.2-0.5 Pa, and the radio frequency power is 200-250W; In the deposition chamber, a pulsed DC bias is applied to the silicon-carbon transition layer, carbon ions in the plasma are guided to bombard the substrate surface in a direction based on the bias electric field, and the bombarded substrate is polished to obtain the heat dissipation component.

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