Preparation method of benzene ring compound modified SAM layer and perovskite module

Abstract

The invention relates to the technical field of photovoltaic cells, and provides a benzene ring compound modified SAM layer and a perovskite module preparation method, the benzene ring compound modified SAM layer comprises self-assembly molecules and an agglomeration inhibitor, the agglomeration inhibitor is dispersed in the self-assembly molecules, and the self-assembly molecules are dispersed in the agglomeration inhibitor. The agglomeration inhibitor is used for inhibiting agglomeration of the self-assembled molecule, the agglomeration inhibitor comprises a benzene ring and at least one X group connected to the benzene ring, the structure of the X group is-R, and-R is any one of a fluorine group, a nitrile group and a nitro group. The SAM layer modified by the benzene ring compound can solve the problems that carrier loss of an interface between a perovskite thin film and a hole transport layer is easily caused by high self-aggregation and poor wettability of self-assembled monomolecules, uneven surface appearance of the SAM layer is caused, and then the subsequent growth and covering quality of the perovskite thin film are influenced.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic cells, and in particular to a method for preparing a SAM layer modified with a benzene ring compound and a perovskite module. Background Art

[0002] In recent years, organic-inorganic halide perovskite materials have attracted widespread attention in the field of solar cells due to their outstanding optoelectronic properties, such as high absorption coefficient, long carrier lifetime, enhanced defect tolerance, increased dielectric constant, and tunable band gap. Inverse perovskite solar cells (PSCs), particularly those employing a pin (PIN) structure, have garnered increasing attention in both academia and industry due to their enhanced stability and scalability. Within this architecture, the application of self-assembled molecules (SAMs) as hole transport materials (HTMs) plays a key role in improving device efficiency and stability.

[0003] However, despite the great potential of SAMs in inverse perovskite solar cells, the agglomeration of the SAM layer has become a pressing problem in practical applications. The agglomeration phenomenon is mainly due to the non-uniformity of the SAM deposition process, which can be caused by various factors, including the choice of deposition method, the chemical structure of the SAM molecules, and the properties of the substrate material.

[0004] Currently, commonly used SAM deposition methods include wet deposition and vapor deposition. Wet deposition is a low-cost method that immerses the sample in a solution of the SAM material, allowing the SAM to bind to the sample surface and align properly. However, this method is susceptible to atmospheric conditions, causing the SAM material to slowly polymerize, thus limiting its service life. Vapor deposition, on the other hand, uses surface plasma treatment to make the substrate material highly reactive with the incoming SAM material. While this method increases the reaction speed, it is complex and relatively costly.

[0005] The chemical structure of SAMs typically consists of a hole-transporting component, an anchoring group, and a spacer group. The anchoring group chemically bonds to the metal oxide or transparent conductive oxide (TCO) substrate, while the spacer group influences the overall structure and properties of the SAM layer. If the intermolecular interactions of the SAMs are too strong or the bond to the substrate material is not strong enough, agglomeration may occur. Summary of the Invention

[0006] The purpose of the present invention is to solve the problem that the high self-aggregation and poor wettability of self-assembled single molecules easily lead to carrier loss at the interface between the perovskite film and the hole transport layer, and cause uneven surface morphology of the SAM layer, which in turn affects the growth and coverage quality of the subsequent perovskite film. A benzene ring compound-modified SAM layer and a preparation method of the perovskite module are provided.

[0007] In order to achieve the above object, the technical solution adopted by the present invention is:

[0008] A SAM layer modified with a benzene ring compound comprises self-assembly molecules and an aggregation inhibitor, wherein the aggregation inhibitor is dispersed in the self-assembly molecules and is used to inhibit the aggregation of the self-assembly molecules. The molecular structure of the aggregation inhibitor comprises a benzene ring and at least one X group connected to the benzene ring, wherein the X group structure is -R, and -R is any one of a fluoro group, a nitrile group, and a nitro group.

[0009] In the benzene ring compound-modified SAM layer disclosed herein, the X group in the molecular structure of the agglomeration inhibitor can interact with the benzene ring in the molecular structure of the agglomeration inhibitor through a conjugation effect, thereby expanding the π system of the agglomeration inhibitor and generating π-π interactions with the benzene ring structure of the self-assembling molecule, thereby reducing the self-aggregation tendency of the self-assembling molecule and making the surface morphology of the SAM layer more uniform. The agglomeration inhibitor can also improve the wettability of the SAM layer, reduce the electron and hole coincidence loss between the perovskite film and the hole transport layer, and improve the electrical conductivity and hole mobility.

[0010] As a preferred embodiment of the present invention, when the number of the X groups is greater than or equal to 2, each of the -R groups is independently selected from any one of a fluoro group, a nitrile group and a nitro group.

[0011] As a preferred embodiment of the present invention, the X group structure is replaced by -(CH2) n -R(n≥1), -R is any one of a fluoro group, a nitrile group and a nitro group.

[0012] As a preferred embodiment of the present invention, when the number of the X groups is greater than or equal to 2, each of the X groups n is independently selected, and -R between the X groups is independently selected from any one of a fluoro group, a nitrile group, and a nitro group.

[0013] As a preferred embodiment of the present invention, the self-assembling molecule comprises one of [2-(9h-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz) and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz).

[0014] The present invention also provides a method for preparing a perovskite module, comprising the following steps:

[0015] S1, perform P1 scribing, cleaning and UV ozone treatment on the substrate in sequence;

[0016] S2, preparing a hole transport layer on the top surface of the substrate by sputtering;

[0017] S3, preparing a self-assembly molecule solution and an aggregation inhibitor solution respectively, mixing the self-assembly molecule solution and the aggregation inhibitor solution, coating the mixed solution on the top surface of the hole transport layer, and obtaining a SAM layer modified with a benzene ring compound as described above after annealing;

[0018] S4, sequentially stacking a perovskite film, an electron transport layer, and a hole blocking layer on top of the benzene ring compound-modified SAM layer;

[0019] S5, using a laser to sequentially cut the hole blocking layer, the electron transport layer, the perovskite film, and the hole transport layer to form a P2 scribe line;

[0020] S6, preparing a metal electrode on the top surface of the hole blocking layer by evaporation;

[0021] S7, performing P3 scribing processing on the top surface of the metal electrode.

[0022] The present invention adopts a method for preparing a perovskite module. The SAM layer modified with the benzene ring compound has better wettability, and the surface morphology of the prepared SAM layer is more uniform, thereby enhancing the adhesion of the perovskite film, improving the coverage of the perovskite film on the hole transport layer, and reducing film holes; the perovskite film prepared on the top surface of the SAM layer has a larger crystal size and better crystallinity, reducing the non-radiative recombination of carriers at the interface between the perovskite film and the hole transport layer, and the perovskite has better crystal quality, thereby improving the photoelectric conversion efficiency of the perovskite cell.

[0023] As a preferred embodiment of the present invention, the solvent of the agglomeration inhibitor solution is an alcohol solvent such as ethanol and isopropanol.

[0024] As a preferred embodiment of the present invention, the concentration of the aggregation inhibitor solution is 0.1-0.3 mg / mL, and the addition ratio of the self-assembly molecules to the aggregation inhibitor is 1:0.1-0.3.

[0025] As a preferred embodiment of the present invention, the thickness of the SAM layer modified with the benzene ring compound is 5-10 nm.

[0026] As a preferred embodiment of the present invention, the material of the perovskite film comprises Cs y MA y FA 1-2y Pb(Br x I 1-x )3, where 0<x, y<1.

[0027] In summary, due to the adoption of the above technical solution, the beneficial effects of the present invention are:

[0028] 1. A SAM layer modified with a benzene ring compound, wherein the X group in the molecular structure of the agglomeration inhibitor can interact with the benzene ring in the molecular structure of the agglomeration inhibitor through a conjugation effect, thereby expanding the π system of the agglomeration inhibitor and generating π-π interactions with the benzene ring structure of the self-assembling molecule, thereby reducing the self-aggregation tendency of the self-assembling molecule and making the surface morphology of the SAM layer more uniform; the agglomeration inhibitor can also improve the wettability of the SAM layer, reduce the electron and hole loss between the perovskite film and the hole transport layer, and improve the conductivity and hole mobility.

[0029] 2. A method for preparing a perovskite module, wherein the SAM layer modified with the benzene ring compound has better wettability, the surface morphology of the prepared SAM layer is more uniform, the adhesion of the perovskite film is enhanced, the coverage of the perovskite film on the hole transport layer is improved, and the film holes are reduced; the perovskite film prepared on the top surface of the SAM layer has a larger crystal size and better crystallinity, which reduces the non-radiative recombination of carriers at the interface between the perovskite film and the hole transport layer, and the perovskite has better crystal quality, thereby improving the photoelectric conversion efficiency of the perovskite cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 The IV curve fitting conductivity diagram of the device DN-ME and the device Me-4PACz with a SAM layer modified with a benzene ring compound;

[0031] Figure 2 The JV curve fitting hole mobility diagram of the device DN-ME and the device Me-4PACz with a SAM layer modified by a benzene ring compound;

[0032] Figure 3 The PL images of the device DN-ME and the device Me-4PACz with a SAM layer modified by a benzene ring compound are shown;

[0033] Figure 4 This is a time-resolved photoluminescence test graph of the device DN-ME and the device Me-4PACz with a SAM layer modified with a benzene ring compound;

[0034] Figure 5 A diagram showing module performance of a method for preparing a perovskite module doped with different concentrations of the agglomeration inhibitor;

[0035] Figure 6 It is a cell DN of a method for preparing a perovskite module and a dark current-voltage diagram of a cell Me-4PACz;

[0036] Figure 7 It is a Nyquist plot of the cell DN and the cell Me-4PACz of the preparation method of a perovskite module;

[0037] Figure 8 It is a cell DN of a perovskite module preparation method and a maximum power point tracking diagram of the cell Me-4PACz. DETAILED DESCRIPTION

[0038] The present invention will be described in detail below with reference to the accompanying drawings.

[0039] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0040] Example 1

[0041] The present invention adopts a benzene ring compound modified SAM layer, which includes self-assembly molecules and an aggregation inhibitor. The aggregation inhibitor is dispersed in the self-assembly molecules and is used to inhibit the aggregation of the self-assembly molecules. The aggregation inhibitor includes a benzene ring and at least one X group connected to the benzene ring. The X group structure is -R, and -R is any one of a fluoro group, a nitrile group, and a nitro group.

[0042] Furthermore, when the number of the X groups is greater than or equal to 2, each of the -R groups is independently selected from any one of a fluoro group, a nitrile group and a nitro group.

[0043] Furthermore, the self-assembling molecule comprises one of [2-(9h-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz) and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz).

[0044] In this embodiment, the prepared structure is FTO / NiO x -The SAM layer / Cu device, the agglomeration inhibitor is ethanol, and the self-assembly molecule is [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), is denoted as device DN-ME.

[0045] The X group in the molecular structure of the agglomeration inhibitor can interact with the benzene ring in the molecular structure of the agglomeration inhibitor through a conjugation effect, thereby expanding the π system of the agglomeration inhibitor and generating a π-π interaction with the benzene ring structure of the self-assembling molecule, thereby reducing the self-aggregation tendency of the self-assembling molecules and making the surface morphology of the SAM layer more uniform. The agglomeration inhibitor can also improve the wettability of the SAM layer, reduce the electron and hole coincidence loss between the perovskite film and the hole transport layer, and improve the electrical conductivity and hole mobility.

[0046] Example 2

[0047] The present invention adopts a benzene ring compound modified SAM layer, based on Example 1, the X group structure is replaced by -(CH2) n -R(n≥1), -R is any one of a fluoro group, a nitrile group and a nitro group.

[0048] Furthermore, when the number of the X groups is greater than or equal to 2, each of the X groups n is independently selected, and the -R between the X groups is independently selected from any one of a fluoro group, a nitrile group, and a nitro group.

[0049] Example 3

[0050] The method for preparing a perovskite module adopted in the present invention comprises the following steps:

[0051] S1, perform P1 scribing, cleaning and UV ozone treatment on the substrate in sequence;

[0052] S2, preparing a hole transport layer on the top surface of the substrate by sputtering;

[0053] S3, preparing a self-assembly molecule solution and an aggregation inhibitor solution respectively, mixing the self-assembly molecule solution and the aggregation inhibitor solution, applying the mixed solution on the top surface of the hole transport layer, and obtaining a SAM layer modified with a benzene ring compound as described in any one of Examples 1 to 2 after annealing;

[0054] S4, sequentially stacking a perovskite film, an electron transport layer, and a hole blocking layer on top of the benzene ring compound-modified SAM layer;

[0055] S5, using a laser to sequentially cut the hole blocking layer, the electron transport layer, the perovskite film, and the hole transport layer to form a P2 scribe line;

[0056] S6, preparing a metal electrode on the top surface of the hole blocking layer by evaporation;

[0057] S7, performing P3 scribing processing on the top surface of the metal electrode.

[0058] Furthermore, the solvent of the agglomeration inhibitor solution is anhydrous ethanol.

[0059] Furthermore, the concentration of the aggregation inhibitor solution is 0.1-0.3 mg / mL, and the addition ratio of the self-assembly molecules to the aggregation inhibitor is 1:0.1-0.3.

[0060] Furthermore, the thickness of the SAM layer modified with the benzene ring compound is 5-10 nm.

[0061] Furthermore, the material of the perovskite film includes Cs y MA y FA 1-2y Pb(Br x I 1-x )3, where 0<x, y<1.

[0062] Preparation of the substrate: Indium tin oxide conductive glass (ITO) was used as the substrate in this embodiment. The substrate was ultrasonically cleaned with anhydrous ethanol, dried thoroughly, and then subjected to UV-ozone treatment for 20 minutes.

[0063] Preparation of the hole transport layer: In this embodiment, the material of the hole transport layer is nickel oxide, and the thickness of the hole transport layer is 20 nm.

[0064] Preparation of the surface modification layer: In this embodiment, the solute and solvent of the self-assembly molecules in the SAM are Me-4PACz and anhydrous ethanol, respectively, and the solute and solvent of the agglomeration inhibitor are 2,6-difluoro-3-nitrobenzonitrile and anhydrous ethanol, respectively. The self-assembly molecule solution and the agglomeration inhibitor solution with concentrations of 2 mg / mL and 1 mg / mL are prepared, respectively. 500 ml and 0-300 ml of the self-assembly molecule solution and the agglomeration inhibitor solution and a certain amount of anhydrous ethanol (500-200 mL) are mixed to obtain the mixed solution. The mixed solution is coated on the top surface of the hole transport layer, and after annealing, a SAM layer modified with a benzene ring compound is obtained.

[0065] Preparation of the perovskite film: Preparation of perovskite precursor solution. In this embodiment, a certain amount of FAI, PbI2, MABr, CsI, PbBr2 and MACl were weighed and dissolved in a mixed solvent of dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) to prepare a CsI solution with a concentration of 1.4 mol / L. 0.05 MA 0.05 FA 0.9 Pb(Br 0.05 I 0.95 )3 perovskite precursor solution. The perovskite film was prepared on the top surface of the SAM layer using a slit coating method in air, with an effective area of ​​57.3 cm 2 The annealing temperature of the perovskite film is 100° C., and the annealing time is 30 min. The thickness of the prepared perovskite film is 400 nm.

[0066] Prepare the electron transport layer and the hole blocking layer. The material of the electron transport layer in this embodiment is C 60 The thickness of the electron transport layer is 30 nm; the material of the hole blocking layer is 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and the thickness of the hole blocking layer is 6 nm.

[0067] The metal electrode layer is prepared. In this embodiment, the material of the metal electrode is copper, and the thickness of the metal electrode is 200 nm.

[0068] The prepared perovskite battery module is recorded as battery DN.

[0069] The SAM layer modified with the benzene ring compound has better wettability, and the surface morphology of the prepared SAM layer is more uniform, which enhances the adhesion of the perovskite film, improves the coverage of the perovskite film on the hole transport layer, and reduces the film holes; the perovskite film prepared on the top surface of the SAM layer has a larger crystal size and better crystallinity, which reduces the non-radiative recombination of carriers at the interface between the perovskite film and the hole transport layer. The perovskite film has better crystal quality, thereby improving the photoelectric conversion efficiency of the perovskite cell.

[0070] Comparative Example 1

[0071] This embodiment is similar to embodiment 1 except that the SAM layer contains the self-assembly molecules and the prepared structure is FTO / NiO x -Me-4PACz / Cu device, denoted as device Me-4PACz.

[0072] The conductivity and hole mobility of the device Me-4PACz and the device DN-ME of Example 1 were measured and calculated respectively. Figure 1 As shown in the figure, the conductivity was obtained by fitting the measured IV curve using the Drude model. The results showed that the introduction of the aggregation inhibitor increased the conductivity of the self-assembled molecule Me-4PACz from 2.65×10 -6 Scm -1 Increased to 7.76×10 -6 S cm -1 .like Figure 2 As shown in the figure, the hole mobility was obtained by fitting the JV curves of the two devices using the Mott-Schottky equation. The introduction of the aggregation inhibitor increased the hole mobility of the self-assembled molecule Me-4PACz from 3.71×10 -3 cm 2 V -1 s -1 Increased to 1.27×10 -2 cm 2 V -1 s -1 These results indicate that the introduction of the aggregation inhibitor significantly promotes the transport of holes extracted from the perovskite film in the self-assembled molecule Me-4PACz, reducing the recombination loss of electrons and holes during the transport process. In addition, the interfacial hole extraction and transport capabilities between the perovskite film and the hole transport layer were studied by PL and time-resolved photoluminescence tests. Figure 3 、 4As shown, when fluorescence is incident from the glass surface, the perovskite film deposited on the device DN-ME exhibits significant PL quenching compared to the perovskite film deposited on the device Me-4PACz. A double-exponential fit of the time-resolved photoluminescence curves reveals a significant decrease in the fluorescence lifetime of the perovskite film deposited on the device DN-ME, from 87.84 ns to 41.33 ns. This indicates that the introduction of the agglomeration inhibitor effectively reduces carrier recombination at the interface between the perovskite film and the hole transport layer, thereby enhancing the hole extraction and transport capability of the hole transport layer. This improvement is primarily attributed to two factors: improved crystalline quality of the perovskite film and increased conductivity of the hole transport layer.

[0073] Comparative Example 2

[0074] This embodiment is similar to embodiment 3 except that the material of the SAM layer contains the self-assembly molecules and the prepared structure is FTO / NiO x / Self-assembled molecular layer / perovskite / C 60 / BCP / Cu device, the material of the self-assembled molecular layer is Me-4PACz, denoted as batteryMe-4PACz.

[0075] Figure 5 The effect of doping different concentrations of the agglomeration inhibitor on the performance of the photovoltaic module was demonstrated, and the optimal doping concentration of the agglomeration inhibitor in the SAM layer was determined to be 0.25 mg / mL. Compared with the battery Me-4PACz, the PCE of the battery DN increased from 17.85% to 20.23%, of which Voc increased from 11.43 to 11.78, JSC increased from 2.20 to 2.23, and FF increased from 70.91% to 76.85%. In order to evaluate the effect of the introduction of the agglomeration inhibitor on the device defect-assisted traps, the electrochemical impedance spectroscopy and dark current-voltage of the battery DN were tested. Figure 6 As shown in Figure 2, compared with the cell Me-4PACz, the cell DN exhibits a lower dark current density, indicating that the cell DN has better diode characteristics and less carrier recombination. Figure 7 As shown, the battery DN exhibits a higher composite resistance value, indicating that the perovskite film has fewer defects, and the carriers are transferred from the perovskite film to the transport layer faster and with less recombination. In addition, in order to evaluate the effect of the introduction of the agglomeration inhibitor on the long-term working stability of the battery module, the packaged battery DN was placed in an environment with a temperature of 45°C and a humidity of 50%-60%, and was continuously irradiated under a white light LED equivalent to 1 sun. Figure 8As shown in Figure 2, the DN cell can still maintain 95% of its initial efficiency under maximum power point tracking for 1000 hours, while the efficiency of the Me-4PACz cell drops by 50% after only 530 hours. The introduction of the aggregation inhibitor significantly improves the stability of the battery module, which is attributed to the improved crystalline quality of the perovskite film due to the reduction in contact angle, as well as the reduced self-aggregation of the self-assembled molecules and the improved conductivity, which leads to reduced interfacial carrier recombination.

[0076] The aggregation inhibitor and the self-assembly molecule are co-assembled through π-π interaction to form the SAM layer modified by the benzene ring compound, and the SAM layer is formed by the NiO x The π-π interaction between the aggregation inhibitor and the self-assembling molecules effectively reduces the self-aggregation of the self-assembling molecules, making it x At the same time, the introduction of the agglomeration inhibitor also increases the wettability of the perovskite precursor solution on the SAM layer, promoting the improvement of the crystallization quality of the perovskite film. In addition, the agglomeration inhibitor also improves the conductivity and hole mobility of the SAM layer, promotes the hole transport layer's ability to extract and transport holes, and reduces the recombination of interface carriers. Therefore, the battery module prepared based on the vacuum flash evaporation and slit coating method achieved a photoelectric conversion efficiency of 20.23%, and the encapsulated device was still able to maintain an initial efficiency of 95% under 1000h of maximum power point tracking.

[0077] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A SAM layer modified with a benzene ring compound, characterized in that: The invention comprises self-assembling molecules and an aggregation inhibitor, wherein the aggregation inhibitor is dispersed in the self-assembling molecules and is used to inhibit the aggregation of the self-assembling molecules. The aggregation inhibitor comprises a benzene ring and at least one X group connected to the benzene ring, wherein the X group structure is -R, and -R is any one of a fluoro group, a nitrile group and a nitro group.

2. The SAM layer modified with a benzene ring compound according to claim 1, characterized in that: When the number of the X groups is greater than or equal to 2, each of -R groups is independently selected from any one of a fluoro group, a nitrile group and a nitro group.

3. The SAM layer modified with a benzene ring compound according to claim 1, characterized in that: Replace the X group structure with -(CH2) n -R(n≥1), -R is any one of a fluoro group, a nitrile group and a nitro group.

4. The SAM layer modified with a benzene ring compound according to claim 3, characterized in that: When the number of the X groups is greater than or equal to 2, each of the X groups n is independently selected, and -R between the X groups is independently selected from any one of a fluoro group, a nitrile group, and a nitro group.

5. A SAM layer modified with a benzene ring compound according to any one of claims 1 to 4, characterized in that: The self-assembling molecules include one of [2-(9h-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid (Me-4PACz) and [4-(3,6-dimethoxy-9H-carbazole-9-yl)butyl]phosphonic acid (MeO-4PACz).

6. A method for preparing a perovskite module, characterized in that: The following steps are involved: S1, perform P1 scribing, cleaning and UV ozone treatment on the substrate in sequence; S2, preparing a hole transport layer on the top surface of the substrate by sputtering; S3, preparing a self-assembly molecule solution and an aggregation inhibitor solution respectively, mixing the self-assembly molecule solution and the aggregation inhibitor solution, applying the mixed solution on the top surface of the hole transport layer, and obtaining a SAM layer modified with a benzene ring compound according to any one of claims 1 to 6 after annealing; S4, sequentially stacking a perovskite film, an electron transport layer, and a hole blocking layer on top of the benzene ring compound-modified SAM layer; S5, using a laser to sequentially cut the hole blocking layer, the electron transport layer, the perovskite film, and the hole transport layer to form a P2 scribe line; S6, preparing a metal electrode on the top surface of the hole blocking layer by evaporation; S7, performing P3 scribing processing on the top surface of the metal electrode.

7. The method for preparing a perovskite module according to claim 6, characterized in that: The solvent of the agglomeration inhibitor solution is an alcohol solvent such as ethanol and isopropanol.

8. The method for preparing a perovskite module according to claim 7, characterized in that: The concentration of the aggregation inhibitor solution is 0.1-0.3 mg / mL, and the addition ratio of the self-assembly molecules to the aggregation inhibitor is 1:0.1-0.

3.

9. The method for preparing a perovskite module according to any one of claims 7 to 8, characterized in that: The thickness of the SAM layer modified by the benzene ring compound is 5-10 nm.

10. The method for preparing a perovskite module according to any one of claims 7 to 8, characterized in that: The material of the perovskite film includes Cs y MA y FA 1-2y Pb(Br x I 1-x )3, where 0<x, y<1.

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