Wafer bearing device and semiconductor processing equipment

Abstract

The invention provides a wafer bearing device and semiconductor processing equipment, and relates to the technical field of semiconductor equipment, and the wafer bearing device comprises a wafer base station which is provided with a plurality of base station through holes in the thickness direction; the supporting frame is arranged below the wafer base station, and a reserved space is formed between the inner peripheral walls of the supporting frame; the lifting mechanism comprises a plurality of lifting assemblies, and the lifting assemblies are in one-to-one correspondence with the base station through holes; one end of each lifting assembly is connected to the supporting frame, and the other end of each lifting assembly extends into the corresponding base station through hole; the driving guide mechanism is arranged between the supporting frame and the wafer base station, and the driving guide mechanism comprises a driving assembly and at least one guide assembly; the driving assemblies and the guiding assemblies are evenly distributed in the same circumferential direction of the supporting frame. The driving guide mechanism forms a circumferential force balance system through the uniform distribution of the driving assembly and the guide assembly, and effectively avoids the inclination and shaking phenomena generated in the lifting process of the support frame, thereby guaranteeing the verticality and stability of wafer lifting.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a wafer carrying device and semiconductor processing equipment. Background Art

[0002] In semiconductor equipment, the wafer carrier is one of the key devices to ensure the quality of wafer processing. With the rapid development of semiconductor technology, the performance requirements for wafer carriers are becoming increasingly stringent. In the prior art, wafer carriers generally use three ejectors that pass through the electrostatic chuck as a supporting structure. These ejectors are installed on a support frame, and the support frame is lifted and lowered by a driving component, thereby driving all the ejectors to rise and fall synchronously. However, this traditional structure has technical problems in actual application: the support frame is prone to horizontal deviation and mechanical jitter during the lifting process, which not only reduces the movement accuracy of the ejector, but may also cause the wafer to tilt or jitter, resulting in slippage. In addition, the poor parallelism of the three ejectors will cause the wafer to jitter or tilt during the lifting process, which will affect the process quality of the wafer. Summary of the Invention

[0003] The purpose of the present invention is to provide a wafer carrier device and semiconductor processing equipment for solving at least one technical problem existing in the prior art.

[0004] In order to achieve the above objectives, the present invention is implemented through the following technical solutions:

[0005] A wafer carrying device, comprising:

[0006] A wafer base is provided with a plurality of base through holes along the thickness direction;

[0007] A support frame is provided below the wafer base, with a reserved space formed between the inner peripheral walls of the support frame;

[0008] The lifting mechanism includes a plurality of lifting components, each corresponding to a base through hole; one end of the lifting component is connected to the support frame, and the other end extends into the corresponding base through hole;

[0009] A driving guide mechanism is provided between the support frame and the wafer base, and the driving guide mechanism includes a driving component and at least one guiding component;

[0010] Among them, the driving component is configured to drive the support frame to rise and fall, and then drive the lifting component to rise and fall with the support frame; the guide component is configured to constrain the lifting direction of the support frame; the driving component and each guide component are evenly distributed along the same circumference of the support frame.

[0011] In some embodiments, the support frame has a first end and a second end, the first end is provided with a guide assembly, and the second end is provided with a lifting assembly.

[0012] In some embodiments, the drive assembly is disposed in a central region of the support frame.

[0013] In some embodiments, the number of lifting assemblies is set to three, and the angle between the two connecting lines formed by any two adjacent lifting assemblies and the center of the support frame is 120°; the number of guide assemblies is set to two, and the angle between the two connecting lines formed by any guide assembly and the driving assembly and the center of the support frame is 120°.

[0014] In some embodiments, the support frame is a ring-shaped member or an arc-shaped member, and the vertical projection point of the center of the support frame on the wafer base coincides with the center point of the wafer base.

[0015] In some embodiments, the lifting assembly includes a connecting shaft, a clamping seat, and an ejector pin, wherein:

[0016] One end of the connecting shaft is mounted on the support frame, and the other end of the connecting shaft is embedded with a clamping seat;

[0017] One end of the ejector pin is clamped in the clamping seat, and the other end of the ejector pin is configured to extend out of or retract into the base through hole as the lifting component rises and falls.

[0018] In some embodiments, a sealing member is sleeved on one end of the lifting assembly close to the support frame, and the inner wall of the sealing member encloses a first space, and the connecting shaft extends through the first space.

[0019] In some embodiments, the wafer base includes an electrostatic chuck, which includes a ceramic layer, a metal layer, and a base from top to bottom;

[0020] A first guide sleeve is embedded in the section of the base through-hole that passes through the base, and the connecting shaft extends into the inner cavity of the first guide sleeve. The first guide sleeve is used to limit the radial displacement of the connecting shaft;

[0021] A second guide sleeve is embedded in the section of the base through hole that passes through the metal layer. The ejector pin extends into the inner cavity of the second guide sleeve. The second guide sleeve is used to limit the radial displacement of the ejector pin.

[0022] In some embodiments, the outer periphery of the first guide sleeve is provided with a radially extending first flange.

[0023] The first flange is clamped and fixed between the sealing component and the base.

[0024] In some embodiments, a plurality of air guiding grooves are formed on the inner wall of the first guide sleeve along the axial direction, and the air guiding grooves are communicated with the first space.

[0025] In some embodiments, the outer periphery of the second guide sleeve is provided with a radially extending second flange.

[0026] The end of the first guide sleeve is provided with a first step surface adapted to the second flange.

[0027] A second step surface adapted to the second flange is provided in the through hole of the base.

[0028] The second flange is clamped and fixed between the first step surface and the second step surface.

[0029] In some embodiments, the bonding surface between the metal layer and the base is offset from the first step surface.

[0030] In some embodiments, a gas channel is opened inside the metal layer;

[0031] An annular groove is provided on the outer wall of the second guide sleeve, and the annular groove is communicated with the gas channel;

[0032] A through hole is provided on the side wall of the second guide sleeve, and the through hole communicates with the annular groove and the inner cavity of the second guide sleeve.

[0033] In some embodiments, the gas channel is connected to a gas source for supplying helium gas to the gas channel.

[0034] In some embodiments, the first guide sleeve comprises a resin material, and the second guide sleeve comprises an electrically insulating resin material.

[0035] In some embodiments, the aperture of the base through hole at the ceramic layer is smaller than the aperture of the base through hole at the metal layer.

[0036] An O-ring is provided between the end of the second guide sleeve and the bottom surface of the ceramic layer.

[0037] In some embodiments, the O-ring is corrosion resistant and can withstand temperatures from -40°C to 80°C.

[0038] A semiconductor processing device is provided in which the wafer carrying device is installed.

[0039] Compared with the prior art, the present invention has the following advantages:

[0040] In the wafer carrying device of the present invention, the coordinated work of the lifting mechanism, the support frame, and the drive and guide mechanism ensures the stability of the wafer during the lifting process. The drive and guide mechanism forms a circumferential force balance system through the uniform distribution of the drive components and the guide components, effectively avoiding the tilting and shaking of the support frame during the lifting process, thereby ensuring the verticality and stability of the wafer lifting.

[0041] In the wafer support device of the present invention, the second guide sleeve embedded in the substrate through-hole effectively reduces the air gap in the substrate through-hole, reducing the risk of ignition. In addition, the annular groove on the outer peripheral wall of the second guide sleeve acts as a buffer chamber to balance the pressure in the gas passage. In addition, helium is introduced from the gas passage into the substrate through-hole, reducing the possibility of ignition by controlling the helium pressure.

[0042] In the wafer carrying device of the present invention, the second guide sleeve is pressed against the bottom surface of the ceramic layer by an O-ring. The deformation of the O-ring can eliminate the gap between the top end of the second guide sleeve and the bottom surface of the ceramic layer, thereby reducing the risk of ignition between the wafer and the metal layer; in addition, the O-ring is elastic, and the dynamic compensation of the O-ring can make up for the tiny gap caused by the thermal expansion and contraction of the components of the deep silicon etching electrostatic chuck at low temperatures, thereby reducing the risk of ignition. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are one embodiment of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive effort:

[0044] Figure 1 Schematic diagram of the three-dimensional structure of the wafer carrier in the embodiment of the present application;

[0045] Figure 2 is a schematic diagram of the angle θ between two connecting lines formed by the first end and the second end of the support frame and the center of the support frame;

[0046] Figure 3 Schematic diagram of the angles α1 / α2 / α3 between two connecting lines formed by any two adjacent lifting assemblies and the center of the support frame;

[0047] Figure 4 Schematic diagram of the angle β1 / β2 between the two connecting lines formed by the guide assembly and the drive assembly and the center of the support frame, and the angle β3 between the two connecting lines formed by the two guide assemblies and the center of the support frame;

[0048] Figure 5 Schematic diagram of the angle φ1 / φ3 between the two connecting lines formed by the guide assembly and the adjacent lifting assembly and the center of the support frame, and the angle φ2 between the two connecting lines formed by the drive assembly and the adjacent lifting assembly and the center of the support frame;

[0049] Figure 6 is a schematic cross-sectional view of a wafer carrier device in an embodiment of the present application;

[0050] Figure 7 Schematic diagram of the structure of a wafer base in a wafer carrying device in an embodiment of the present application;

[0051] Figure 8 Schematic diagram of the three-dimensional structure of the first guide sleeve in the wafer carrying device in the embodiment of the present application;

[0052] Figure 9 Schematic diagram of the three-dimensional structure of the second guide sleeve in the wafer carrying device in the embodiment of the present application;

[0053] Figures 1 to 9 Included are:

[0054] Wafer base 1:

[0055] Base through hole 101, second step surface 1011,

[0056] Electrostatic chuck 11, ceramic layer 111, metal layer 112, gas channel 1121,

[0057] Base 113, joint surface 1131,

[0058] The first guide sleeve 13, the first flange 131, the air guide channel 132, the first step surface 133,

[0059] The second guide sleeve 14, the second flange 141, the annular groove 142, the through hole 143,

[0060] O-ring 15;

[0061] Support frame 2:

[0062] reserved space 21, first end 22, second end 23;

[0063] Lifting mechanism 3:

[0064] Lifting assembly 31, connecting shaft 311, clamping seat 312, ejector pin 313, sealing element 314, bellows 3141, first flange 3142, second flange 3143;

[0065] Drive guide mechanism 4:

[0066] Driving assembly 41 , connecting piece 411 , and guiding assembly 42 . DETAILED DESCRIPTION

[0067] The scheme proposed in the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation methods of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the efficacy and purpose that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0068] like Figure 1 and Figure 7 As shown, a wafer carrying device includes:

[0069] The wafer base 1 is provided with a plurality of base through holes 101 along the thickness direction;

[0070] The support frame 2 is arranged below the wafer base 1, and a reserved space 21 is formed between the inner peripheral walls of the support frame 2;

[0071] The lifting mechanism 3 includes a plurality of lifting components 31, each corresponding to the base through hole 101; a first end of the lifting component 31 is connected to the support frame 2, and a second end of the lifting component 31 extends into the corresponding base through hole 101;

[0072] A driving guide mechanism 4 is provided between the support frame and the wafer base 1 , and includes a driving component 41 and at least one guiding component 42 ;

[0073] Among them, the driving component 41 is configured to drive the support frame 2 to rise and fall, thereby driving the lifting component 31 to rise and fall with the support frame 2; the guide component 42 is configured to constrain the lifting direction of the support frame 2; the driving component 41 and each guide component 42 are evenly distributed along the same circumference of the support frame 2.

[0074] Optionally, the distribution pitch diameters of the driving assembly 41 and each guide assembly 42 are the same.

[0075] The carrying surface of the wafer base 1 in the wafer carrying device of the present application can carry wafers, and the wafer carrying device of the present application can also perform lifting operations on the wafers. The following example illustrates a working process of the wafer carrying device of the present application:

[0076] During the wafer lifting operation, the drive assembly 41 of the guide mechanism 4 drives the support frame 2 vertically up and down. The lifting motion of the support frame 2 is transmitted through its connection points to the multiple lifting assemblies 31 of the lifting mechanism 3. Each lifting assembly 31 corresponds to a base through-hole 101 of the wafer base 1. As the support frame 2 rises and falls, the second end of the lifting assembly 31 moves up and down along the corresponding base through-hole 101. When the lifting assembly 31 rises, its second end extends from the base through-hole 101 and contacts the lower surface of the wafer, lifting the wafer. When the lifting assembly 31 descends, its second end retracts into the base through-hole 101, and the wafer subsequently descends to the supporting surface of the wafer base 1. During this process, at least one guide assembly 42 constrains the direction of movement of the support frame 2, ensuring that the lifting path of each part of the support frame 2 is perpendicular to the wafer base 1, preventing the support frame 2 from tilting. The drive assembly 41 and all guide assemblies 42 are evenly distributed along the same circumference of the support frame 2 to provide a balanced driving and guiding force, thereby achieving smooth lifting and lowering of the support frame 2.

[0077] The reserved space 21 formed between the inner peripheral walls of the support frame 2 in the wafer carrying device of the present application constitutes a through-channel, which reserves space required for maintenance operations in the middle area, thereby improving the maintainability of the equipment;

[0078] When the driving force of the driving component 41 is concentrated on a local position of the support frame 2, the support frame 2 will be subjected to an unbalanced load during the lifting process, which will cause the support frame 2 to vibrate and droop during lifting; therefore, the driving guide mechanism 4 in the wafer carrying device of the present application is configured with a driving component 41 and at least one guide component 42, and the driving component 41 and the guide component 42 are evenly distributed along the same circumference of the support frame 2, forming a circumferential force balance system; wherein, the driving component 41 provides the driving force to drive the support frame 2 to lift; the guide component 42 limits the support frame 2 in operation During the movement, a tendency of deflection is generated, so that each part of the support frame 2 moves along a trajectory perpendicular to the wafer base 1; the first ends of all lifting components 31 are connected to the supported frame 2, and the second ends are respectively inserted into the corresponding base through holes 101 of the wafer base 1; when the driving guide mechanism 4 drives the support frame 2 to perform lifting, the support frame 2 acts as a transmission platform to drive the synchronous lifting and moving of all lifting components 31; the path constraint of the guide component 42 on the support frame 2 is further converted into parallelism control of multiple lifting components 31, so that the extended height of the second end of each lifting component 31 is consistent.

[0079] Optional, see Figure 1-2The support frame 2 has a first end 22 and a second end 23. The first end 22 is provided with a guide assembly 42, and the second end 23 is provided with a lifting assembly 31. The ends of the support frame 2 are susceptible to tilting due to an imbalance in the driving force. The guide assembly 42 and the lifting assembly 31 are respectively provided at the first end 22 and the second end 23, which can apply a restraining force to the tilting area and prevent the occurrence of drooping.

[0080] Optional, please continue to Figure 2 The angle θ between the two connecting lines formed by the first end 22 and the second end 23 and the center of the support frame 2 does not exceed 120°. The angle θ does not exceed 120°, which can make the spatial positions of the two ends (the first end 22 and the second end 23) close to each other, improve the anti-deflection ability of the support frame 2, and suppress the drooping phenomenon.

[0081] Optional, please continue to Figure 2 , the driving assembly 41 is arranged in the middle area of ​​the support frame 2;

[0082] The middle area is not limited to the middle position of the support frame 2 body, and the middle area also includes the peripheral area close to the middle position of the support frame 2 body;

[0083] Along the circumference of the support frame 2, there is a first path distance from the middle region to the first end 22; along the circumference of the support frame 2, there is a second path distance from the middle region to the second end 23; the first path distance and the second path distance are equal or similar;

[0084] The technical essence of the middle area is to radiate the driving force from the middle area to the two ends (the first end 22 and the second end 23). The propagation path of the driving force tends to be equidistant, which can make the lifting of the support frame 2 more stable.

[0085] Optionally, the number of the lifting assemblies 31 is set to three, and the number of the guide assemblies 42 is set to two;

[0086] like Figure 3 As shown, the angles (α1, α2, α3) between the two connecting lines formed by any two adjacent lifting assemblies 31 and the center of the support frame 2 are 120°; the three lifting assemblies 31 are evenly spaced 120° around the circumference of the support frame 2 to form a regular triangle support surface. The wafer load is evenly distributed to the three fulcrums, so that the resultant supporting force always passes through the center of the wafer, thereby enabling the wafer to be lifted vertically.

[0087] like Figure 4As shown, the angles (β1, β2) between the two connecting lines formed by the guide assembly 42 and the drive assembly 41 and the center of the support frame 2 are 120°; the angle β3 between the two connecting lines formed by the two guide assemblies 42 and the center of the support frame 2 is 120°; wherein, the drive assembly 41 can also provide the same guiding function as the guide assembly 42, and the two guide assemblies 42 and the drive assembly 41 are staggered to form a guiding equilateral triangle, and the direction of the driving force passes through the centroid of the support frame 2, so that the lifting and lowering of the support frame 2 is more stable;

[0088] like Figure 5 As shown, in the clockwise direction, the angle between the two connecting lines formed by the first lifting component 31 and the first guide component 42 and the center of the support frame 2 is φ1, the angle between the two connecting lines formed by the second lifting component 31 and the drive component 41 and the center of the support frame 2 is φ2, and the angle between the two connecting lines formed by the third lifting component 31 and the second guide component 42 and the center of the support frame is φ3, wherein φ1=φ2=φ3, and φ1, φ2, φ3 are all less than or equal to 30°; the lifting mechanism 3 and the drive guide mechanism 4 form a bisymmetrical triangular mechanical network, and a constraint unit (guide component 42 / drive component 41) is set on one side of each lifting component 31, so that each component reaches the end of the stroke at the same time, avoiding the occurrence of drooping and shaking of the support frame 2.

[0089] Optionally, the support frame 2 is a ring-shaped member (not shown) or an arc-shaped member (for example Figure 1 The inner space enclosed by the annular or arc-shaped support frame 2 is left to allow space for installation and maintenance of other mechanisms of the lower electrode;

[0090] The vertical projection point of the center (center of the circle) of the support frame 2 on the wafer base 1 coincides with the center point of the wafer base 1, ensuring the parallelism of the support frame 2 and the wafer base 1 throughout the entire stroke.

[0091] Optional, such as Figure 1 As shown, the lifting components 31 and the components in the driving and guiding mechanism 4 (driving components 41 or guiding components 42) are alternately distributed in the circumferential direction of the support frame 2, that is, a driving component 41 or a guiding component 42 is distributed between any two lifting components 31, and the lifting path of each lifting component 31 is constrained in real time by the adjacent driving component 41 or guiding component 42.

[0092] Optional, such as Figure 1 As shown, the fixed end of the driving component 41 is installed on the lower surface of the wafer base 1 , and the driving end of the driving component 41 is connected to the support frame 2 .

[0093] Optionally, the driving component 41 can be selected by those skilled in the art according to production needs. For example, the driving component 41 can be a driving structure such as a linear cylinder or a motor.

[0094] Optional, such as Figure 1 As shown, a connection area is provided on the support frame 2, and the driving end of the driving assembly 41 is fixedly connected to the connecting member 411;

[0095] The width of the connection area is greater than that of other areas of support frame 2, and a pair of lugs are provided in the connection area, one of which projects inward along the width of support frame 2, and the other projects outward along the width of support frame 2. Support frame 2 is secured to connector 411 via fasteners that penetrate the pair of lugs and connector 411. The lugs are positioned diagonally above connector 411. The widened design of the connection area increases local stiffness and load-bearing cross-sectional area. The widened structure reduces local stress peaks, helps distribute loads, and reduces stress concentration, thereby increasing the fatigue life of support frame 2 in the connection area. The two diagonally distributed lugs create an optimized lever arm layout.

[0096] Optional, such as Figure 1 As shown, the guide assembly 42 includes a linear bearing and a guide shaft. The guide shaft is fixedly mounted on the bottom surface of the wafer base 1. A vertical bearing mounting hole is opened on the support frame 2. The linear bearing is mounted in the bearing mounting hole. The guide shaft extends into the linear bearing and slides with the linear bearing.

[0097] Optionally, the guide shaft includes a first shaft segment and a second shaft segment, the inner diameter of the linear bearing matches the outer diameter of the first shaft segment, and the outer diameter of the first shaft segment is smaller than the outer diameter of the second shaft segment, so as to form a step at the junction of the first shaft segment and the second shaft segment, which is used to limit the sliding range of the linear bearing so that the linear bearing can only slide on the first shaft segment, thereby limiting the stroke of the support frame 2, and further limiting the length of the second end of the lifting assembly 31 extending out of the base through hole 101.

[0098] Optional, such as Figure 6 As shown, the lifting assembly 31 includes a connecting shaft 311, a clamping seat 312 and an ejector pin 313, wherein:

[0099] One end of the connecting shaft 311 is mounted on the support frame 2, and the other end of the connecting shaft 311 is embedded with a clamping seat 312;

[0100] One end of the ejector pin 313 is clamped in the clamping seat 312 , and the other end of the ejector pin 313 is configured to extend or retract into the base through hole 101 as the lifting assembly 31 rises and falls;

[0101] The wafer is supported by the ejector pins 313 so as to be separated from the wafer base 1 so that the robot can pick up the wafer.

[0102] Optionally, please continue to refer to 6 , the lifting assembly 31 is provided with a seal 314 at one end thereof close to the support frame 2 , the inner wall of the seal 314 encloses a first space, and the connecting shaft 311 extends through the first space.

[0103] Optionally, please continue to refer to 6. The sealing member 314 includes a bellows 3141, a first flange 3142, and a second flange 3143, wherein:

[0104] The first flange 3142 is sealed and connected to the bottom surface of the wafer base 1.

[0105] The upper end of the bellows 3141 is sealed and connected to the first flange 3142.

[0106] The lower end of the bellows 3141 is sealed and connected to the second flange 3143.

[0107] The connecting shaft 311 passes through the second flange 3143 , and the connecting shaft 311 and the second flange 3143 are fixedly connected at the through-joint and maintain a seal;

[0108] The first flange 3142 , the bellows 3141 , and the second flange 3143 enclose a first space, and the connecting shaft 311 extends through the first space.

[0109] Optional, such as Figure 6-7 As shown, the wafer base 1 includes an electrostatic chuck 11, which includes a ceramic layer 111, a metal layer 112 and a base 113 from top to bottom, and the metal layer 112 is connected to the lower surface of the ceramic layer 111;

[0110] A first guide sleeve 13 is embedded in the section of the base through hole 101 that passes through the base 113. The connecting shaft 311 extends into the inner cavity of the first guide sleeve 13. The first guide sleeve 13 is used to limit the radial displacement of the connecting shaft 311.

[0111] A second guide sleeve 14 is embedded in the section of the base through hole 101 that passes through the metal layer 112 . The ejector pin 313 extends into the inner cavity of the second guide sleeve 14 . The second guide sleeve 14 is used to limit the radial displacement of the ejector pin 313 .

[0112] in,

[0113] The first guide sleeve 13 and the second guide sleeve 14 are both provided with guide holes along the axial direction;

[0114] The first guide sleeve 13 is in clearance fit with the connecting shaft 311, and the first guide sleeve 13 serves as a guide pair for the vertical movement of the connecting shaft 311;

[0115] The second guide sleeve 14 is loosely fitted with the ejector pin 313, and the second guide sleeve 14 can effectively reduce the air gap, thereby reducing the risk of sparking. Specifically, the electrostatic chuck 11 is used to carry the input of RF power, and the RF power will generate voltage on the surface of the electrostatic chuck 11. According to Paschen's law, the breakdown voltage of the air gap is related to the product of the air gap distance and the air pressure. The fitting gap between the components in the base through hole 101 is prone to micro-discharge and even sparking. The second guide sleeve 14 in the present application can effectively fill the volume of the base through hole 101 in the section of the metal layer 112, reduce the air gap, and thereby reduce the risk of micro-discharge and sparking.

[0116] Optional, please continue to Figure 6 The outer periphery of the first guide sleeve 13 is provided with a first flange 131 extending radially.

[0117] The first flange 131 is clamped and fixed between the sealing member 314 and the base 113 .

[0118] By providing a radially extending first flange 131 on the outer periphery of the first guide sleeve 13, the positioning and installation of the first guide sleeve 13 can be facilitated. During installation, the first flange 131 serves as a positioning reference, making it easier to align the position, effectively improving assembly efficiency and accuracy. The first flange 131 is clamped between the bottom surface of the base 113 and the top surface of the seal 314, providing a direct positioning constraint. In addition, the first flange 131 provides an annular support, which enhances the ability of the first guide sleeve 13 to resist lateral torque, and can prevent the first guide sleeve 13 from bending under the lateral pressure of the connecting shaft 311, thereby maintaining the guiding accuracy of the connecting shaft 311, and further ensuring the smooth movement of the ejector pin 313.

[0119] Optional, such as Figure 6 and Figure 8 As shown, a plurality of air guiding channels 132 are axially defined on the inner wall of the first guide sleeve 13 , and the air guiding channels 132 are in communication with the first space.

[0120] By opening a plurality of air guide grooves 132 axially on the inner wall of the first guide sleeve 13 , the gap between the first guide sleeve 13 and the outer wall of the connecting shaft 311 can be increased, thereby increasing the ventilation cross-sectional area, which helps to discharge the gas in the bellows during vacuuming.

[0121] Optionally, three vertical air guide channels 132 are formed on the inner wall of the first guide sleeve 13 .

[0122] Optional, such as Figure 6 and Figure 9 As shown, the outer periphery of the second guide sleeve 14 is provided with a radially extending second flange 141.

[0123] The end of the first guide sleeve 13 is provided with a first step surface 133 adapted to the second flange 141.

[0124] A second step surface 1011 adapted to the second flange 141 is provided in the base through hole 101.

[0125] The second flange 141 is clamped and fixed between the first step surface 133 and the second step surface 1011 .

[0126] By clamping the second flange 141 on the second guide sleeve 14 between the two step surfaces (the first step surface 133 and the second step surface 1011), not only can the installation of the second guide sleeve 14 be more convenient, but also the second guide sleeve 14 and the first guide sleeve 13 can be accurately aligned.

[0127] Optional, please continue to Figure 6 The joint surface 1131 of the metal layer 112 and the base 113 is staggered with the first step surface 133, so that the lower end of the second guide sleeve 14 avoids the gap between the metal layer 112 and the base 113, preventing micro-discharge or even sparking.

[0128] Optional, please continue to Figure 6 , a gas channel 1121 is opened inside the metal layer 112;

[0129] The outer wall of the second guide sleeve 14 is provided with an annular groove 142 , which is in communication with the gas channel 1121 ;

[0130] A through hole 143 is defined on the side wall of the second guide sleeve 14 . The through hole 143 connects the annular groove 142 with the inner cavity of the second guide sleeve 14 .

[0131] By providing an annular groove 142 on the outer wall of the second guide sleeve 14 , the annular groove 142 serves as a buffer chamber, which can balance the pressure in the gas passage and reduce the risk of ignition.

[0132] Optionally, the gas channel 1121 is connected to a gas source (not shown) for supplying helium to the gas channel 1121. By controlling the pressure of the helium, the pd value can be adjusted to a region with a higher breakdown voltage on the Paschen curve, away from a dangerous region with a lower breakdown voltage.

[0133] In addition, the helium gas introduced from the gas channel 1121 can enter the air gap formed between the outer wall of the ejector pin 313 and the inner wall of the second guide sleeve 14 through the through hole 143, and then enter the first space through the multiple gas guide grooves 132 opened on the inner wall of the first guide sleeve 13.

[0134] Optionally, the first guide sleeve 13 comprises a resin material, and utilizes the wear resistance and dimensional stability of the resin to provide a guide function for the vertical movement of the connecting shaft 311;

[0135] The second guide sleeve 14 comprises an electrically insulating resin material, which can effectively block the electrical creepage path and prevent the risk of ignition in a high-voltage environment.

[0136] Optional, please continue to Figure 6 The aperture of the base through hole 101 at the ceramic layer 111 is smaller than that at the metal layer 112.

[0137] An O-ring 15 is provided between the end of the second guide sleeve 14 and the bottom surface of the ceramic layer 111 .

[0138] The second guide sleeve 14 is pressed against the bottom surface of the ceramic layer 111 by the O-ring 15. The deformation of the O-ring 15 can eliminate the gap between the top of the second guide sleeve 14 and the bottom surface of the ceramic layer 111, thereby reducing the risk of ignition between the wafer and the metal layer 112. In addition, the O-ring 15 is elastic, and the dynamic compensation of the O-ring 15 can make up for the tiny gap caused by the thermal expansion and contraction of the components of the deep silicon etching electrostatic chuck 11 at low temperatures, thereby reducing the risk of ignition.

[0139] Optionally, the O-ring 15 is corrosion-resistant and can withstand temperatures ranging from -40°C to 80°C.

[0140] A semiconductor processing device is provided in which the wafer carrying device is installed.

[0141] The semiconductor processing equipment includes but is not limited to plasma etching equipment or pre-cleaning equipment. Taking semiconductor plasma etching equipment as an example, the semiconductor processing equipment includes a chamber cover, an electrode assembly, a gas supply assembly and a chamber. The electrode assembly is used to excite plasma, and the gas supply assembly is used to inject process gas into the chamber. The aforementioned wafer carrier is set in the chamber, and the wafer carrier is used to place the wafer to be processed. The wafer carrier includes three ejector pins 313. The wafer is supported by the three ejector pins 313, so that the wafer is separated from the wafer base 1 so that the robot can pick up the wafer.

[0142] It should be noted that, in this document, relational terms such as first and second are used solely to distinguish one entity or operation from another, and do not necessarily require or imply any actual relationship or order between these entities or operations. Furthermore, the terms "comprise," "include," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. Without further limitation, an element defined by the phrase "comprising a..." does not preclude the presence of other identical elements in the process, method, article, or device comprising the element. Furthermore, the term "connected" herein refers to a direct connection between A and B, or an indirect connection between A and B, such as through C, or even through more components such as C and D. The connection between A and B can be integral or separate, removable, or fixed. The term "optional" herein refers to a technical feature that can be combined or not combined with any other feature herein.

[0143] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description is not intended to limit the present invention. After reading the above description, various modifications and substitutions of the present invention will become apparent to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A wafer carrying device, characterized in that: include: A wafer base is provided with a plurality of base through holes along the thickness direction; A support frame is provided below the wafer base, with a reserved space formed between the inner peripheral walls of the support frame; A lifting mechanism comprising a plurality of lifting components, each corresponding to one of the base through-holes; one end of each lifting component is connected to the support frame, and the other end extends into the corresponding base through-hole; A driving and guiding mechanism, which is arranged between the support frame and the wafer base, and includes a driving component and at least one guiding component; Among them, the driving component is configured to drive the support frame to rise and fall, and then drive the lifting component to rise and fall with the support frame; the guide component is configured to constrain the lifting direction of the support frame; the driving component and each of the guide components are evenly distributed along the same circumference of the support frame.

2. The wafer carrier device according to claim 1, wherein: The support frame has a first end and a second end, the first end is provided with the guide assembly, and the second end is provided with the lifting assembly.

3. The wafer carrier device according to claim 1, wherein: The driving assembly is arranged in the middle area of ​​the support frame.

4. The wafer carrier device according to claim 1, wherein: The number of the lifting assemblies is set to three, and the angle between the two connecting lines formed by any two adjacent lifting assemblies and the center of the support frame is 120°; The number of the guide assemblies is set to two, and the angle between two connecting lines formed by any one of the guide assemblies and the driving assembly and the center of the support frame is 120°.

5. The wafer carrier device according to claim 1, wherein: The support frame is a ring-shaped member or an arc-shaped member, and the vertical projection point of the center of the support frame on the wafer base coincides with the center point of the wafer base.

6. The wafer carrier device according to claim 1, wherein: The lifting assembly includes a connecting shaft, a clamping seat and an ejector pin, wherein: One end of the connecting shaft is mounted on the supporting frame, and the other end of the connecting shaft is embedded in the clamping seat; One end of the ejector pin is clamped in the clamping seat, and the other end of the ejector pin is configured to extend out of or retract into the base through hole as the lifting component rises and falls.

7. The wafer carrier device according to claim 6, wherein: The lifting assembly is sleeved with a sealing member at one end thereof close to the supporting frame. The inner wall of the sealing member encloses a first space, and the connecting shaft extends through the first space.

8. The wafer carrier device according to claim 7, wherein: The wafer base includes an electrostatic chuck, which includes a ceramic layer, a metal layer and a base from top to bottom; A first guide sleeve is embedded in the section of the base through-hole that passes through the base, and the connecting shaft extends into the inner cavity of the first guide sleeve. The first guide sleeve is used to limit the radial displacement of the connecting shaft; A second guide sleeve is embedded in the section of the base through hole that passes through the metal layer. The ejector pin extends into the inner cavity of the second guide sleeve. The second guide sleeve is used to limit the radial displacement of the ejector pin.

9. The wafer carrying device according to claim 8, wherein: The outer periphery of the first guide sleeve is provided with a first flange extending radially. The first flange is clamped and fixed between the sealing component and the base.

10. The wafer carrying device according to claim 8, wherein: The inner wall of the first guide sleeve is provided with a plurality of air guiding grooves along the axial direction, and the air guiding grooves are communicated with the first space.

11. The wafer carrier device according to claim 8, wherein: The outer periphery of the second guide sleeve is provided with a second flange extending radially. The end of the first guide sleeve is provided with a first step surface adapted to the second flange. A second step surface adapted to the second flange is provided in the base through hole. The second flange is clamped and fixed between the first step surface and the second step surface.

12. The wafer carrier device according to claim 11, wherein: The bonding surface between the metal layer and the base is staggered with the first step surface.

13. The wafer carrier device according to claim 8, wherein: A gas channel is provided inside the metal layer; An annular groove is provided on the outer wall of the second guide sleeve, and the annular groove is communicated with the gas channel; A through hole is formed on the side wall of the second guide sleeve, and the through hole communicates with the annular groove and the inner cavity of the second guide sleeve.

14. The wafer carrying device according to claim 13, wherein: The gas channel is connected to a gas source, and the gas source is used to supply helium to the gas channel.

15. The wafer carrying device according to claim 8, wherein: The first guide sleeve includes a resin material, and the second guide sleeve includes an electrically insulating resin material.

16. The wafer carrier device according to claim 8, wherein: The aperture of the base through hole at the ceramic layer is smaller than the aperture of the base through hole at the metal layer. An O-ring is provided between the end of the second guide sleeve and the bottom surface of the ceramic layer.

17. The wafer carrier device according to claim 16, wherein: The O-ring is corrosion-resistant and can withstand temperatures from -40°C to 80°C.

18. A semiconductor processing equipment, characterized in that: The semiconductor processing equipment is installed with a wafer carrier device as described in any one of claims 1 to 17.

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