Plasma generation-oriented parameterized high-voltage modulation alternating current power supply

Abstract

The invention discloses a plasma generation-oriented parameterized high-voltage modulation alternating-current power supply, and belongs to the technical field of electronic power supplies. The power supply is composed of a multi-stage conversion module. A DC boost part adopts a BOOST circuit to boost an input low-voltage DC power supply to a high-voltage DC power supply. The inversion part adopts a phase-shifted full-bridge inversion circuit and converts the boosted direct-current high voltage into a high-frequency alternating-current signal; the rear stage is connected to the high-voltage transformer to further boost and output the alternating current waveform; a pulse density modulation control mode is adopted, and effective voltage and modulation parameters are accurately controlled and output by adjusting pulse switch density, so that strict requirements on high-voltage pulse signal characteristics in a plasma excitation process are met; the high-voltage alternating-current pulse power supply is simple and compact in circuit structure, wide in parameter adjustable range, high in control precision and excellent in conversion efficiency, can provide a stable and flexible high-voltage alternating-current pulse power supply for various plasma generation or excitation systems, and improves the performance and reliability of a plasma device.

Description

Technical Field

[0001] The present invention relates to the technical field of electronic power supplies, and in particular to a parameterized high-voltage modulated AC power supply for plasma generation. Background Art

[0002] The widespread application of plasma technology in fields such as material processing, medical sterilization, environmental management, and gas excitation has led to higher demands on the performance of its excitation sources. In particular, in applications requiring high-speed response, adjustable parameters, and high stability, traditional high-voltage power supplies with fixed frequency and fixed amplitude are no longer able to meet the plasma device's demand for high-frequency, high-voltage, and controllable AC excitation signals. Currently, mainstream plasma excitation power supplies mostly use simplified high-voltage DC power supplies or industrial frequency transformer systems. While simple in structure, these systems suffer from issues such as a small output adjustment range, low control accuracy, slow response speed, and weak modulation capability. These factors make them particularly difficult to adapt to applications such as dielectric barrier discharge (DBD), which are highly sensitive to discharge characteristics.

[0003] During plasma excitation, parameters such as voltage waveform, frequency, amplitude, and modulation method significantly influence discharge uniformity, plasma density, and energy efficiency. High-voltage pulse excitation applications, in particular, require power supply output with high modulation accuracy and dynamic response capabilities. However, existing technologies still have significant limitations in frequency modulation, voltage control methods, system integration, and energy efficiency.

[0004] Furthermore, common control methods such as pulse width modulation (PWM) are susceptible to switching device limitations in high-voltage, high-frequency applications, resulting in significant electromagnetic interference and waveform distortion. Therefore, developing a power supply with a compact structure, stable output, flexible and adjustable control parameters, high efficiency, and adaptability to various plasma discharge requirements has become an important direction for technological development.

[0005] Pulse density modulation (PDM), an emerging modulation method, offers advantages over traditional PWM, including constant switching frequency, high control accuracy, good dynamic response, and fine modulation granularity. It is particularly suitable for precisely controlling high-frequency AC outputs. Implementing PDM control based on the STM32 chip significantly improves the system's real-time performance and robustness.

[0006] Therefore, a parameterized high-voltage modulated AC power supply system for plasma generation is proposed. Through multi-stage power conversion, full-bridge phase-shifted inversion and high-voltage transformer output, combined with the PDM control strategy implemented by the STM32 control chip, a wide range of output voltage amplitude, frequency and modulation frequency can be continuously adjusted, providing high-performance power support for plasma excitation, and effectively solving the technical problems of low control accuracy and poor adaptability of existing technologies. Summary of the Invention

[0007] The purpose of the present invention is to overcome the defects existing in the above-mentioned background technology. The present invention provides a parameterized high-voltage modulated AC power supply for plasma generation, which aims to solve the problems of low control accuracy, slow dynamic response and limited output parameter adjustment range of existing traditional high-voltage power supplies for high-voltage and high-frequency pulse signals in plasma excitation applications.

[0008] The present invention adopts the following technical solutions to solve the above technical problems:

[0009] A parameterized high-voltage modulated AC power supply for plasma generation, characterized in that the power supply comprises:

[0010] A DC boost module, which uses a BOOST circuit topology to boost the input low-voltage DC power supply to high-voltage DC;

[0011] An inverter module, wherein the inverter module adopts a phase-shifted full-bridge inverter circuit to convert the high-voltage direct current into a high-frequency alternating current signal;

[0012] A high-voltage transformer, connected to the output end of the inverter module, for further boosting the high-frequency AC signal for output;

[0013] The control module uses an STM32 chip to implement PDM control for accurately controlling the output voltage and modulation parameters. The PDM is pulse density modulation.

[0014] Furthermore, the control module adopts an STM32 chip to achieve precise control of the output voltage, frequency and modulation frequency, and the control module can be wirelessly controlled through an external Bluetooth module, thereby enabling a mobile device or computer to remotely adjust the output voltage and other parameters.

[0015] Further, the bluetooth module is connected through the serial communication interface (USART) of STM32 chip, and the built-in serial communication protocol stack of STM32 chip supports two-way data transmission with bluetooth module. The bluetooth module adopts the low-power bluetooth chip supporting BLE 4.2 or above protocol, and built-in GATT service structure, can realize bluetooth pairing communication with mobile terminal or computer. The user can view system operating state parameters (such as output voltage, frequency, modulation frequency, etc.) in real time through supporting APP or computer software, and send control instructions to STM32 to realize functions such as remote adjustment output voltage and modulation parameters. To enhance anti-interference ability, the bluetooth module is also designed with antenna gain circuit and radio frequency front-end filtering and matching network to ensure stable communication under high voltage and high frequency working environment.

[0016] Furthermore, the high-voltage transformer is insulated by covering the entire transformer with silicone. The insulation treatment includes: after the transformer winding and iron core are encapsulated as a whole, the thermally conductive room-temperature curing silicone is evenly encapsulated inside the transformer casing through an injection molding process. The thickness of the silicone is not less than 3 mm, and the coverage range includes the high-voltage lead wires, the winding layers and the edge of the iron core. A stress buffer structure is provided at the transformer terminal to prevent corona discharge when the packaging material ages or ruptures; the voltage resistance level of the silicone material is not less than 25kV / mm, and the volume resistivity is not less than 10^14Ω·cm.

[0017] Furthermore, the power supply realizes independent adjustment of the output voltage amplitude, AC base frequency and modulation frequency through the control logic of the STM32 chip, combined with the closed-loop feedback control of the BOOST boost circuit, the PWM control of the full-bridge inverter module and the independent modulation timing control; wherein, the adjustment of the output voltage amplitude is to sample the output voltage feedback signal through the STM32 chip, and dynamically adjust the PWM duty cycle of the BOOST circuit to achieve boost regulation; the adjustment of the AC base frequency is completed by adjusting the frequency of the PWM signal in the phase-shifted full-bridge inverter module; the adjustment of the modulation frequency is then performed by an independent timer inside the STM32 to generate a periodic signal and control the periodic change of the output signal pulse density or phase structure.

[0018] Furthermore, the power supply adopts pulse density modulation technology to adjust the output effective voltage without changing the switching frequency, and flexibly adjusts the frequency and modulation parameters according to the needs of the plasma excitation system to meet the requirements under different plasma discharge conditions.

[0019] Furthermore, the power supply parameter ranges are as follows: the output voltage amplitude range is continuously adjustable from 2.5kV to 3.5kV; the output AC fundamental frequency range is continuously adjustable from 50kHz to 100kHz; and the modulation frequency is continuously adjustable from 0Hz to 500Hz.

[0020] Furthermore, the power supply uses high-efficiency heat dissipation materials on the power devices of the inverter module and the DC boost module, and uses aluminum alloy heat sinks in direct contact with the switching devices.

[0021] Furthermore, the airflow channel design adopted by the power supply ensures that the areas where heat is concentrated, namely the inverter circuit and the high-voltage transformer, can be adequately dissipated.

[0022] Furthermore, the power supply realizes its function through the following steps:

[0023] Step S1: Boost the input low-voltage DC to high-voltage DC through a BOOST circuit designed based on the TL494 chip;

[0024] Step S2: converting the boosted high-voltage DC into a high-frequency AC signal through a phase-shifted full-bridge inverter circuit;

[0025] Step S3: further boosting the high-frequency AC signal through a high-voltage transformer for output;

[0026] Step S4: Accurately control the output voltage, frequency, modulation frequency and other parameters by pulse density modulation.

[0027] Compared with the prior art, the present invention adopts the above technical solution and has the following beneficial effects:

[0028] (1) The present invention proposes a parametric high-voltage modulated AC power supply for plasma generation, which accurately controls the output voltage by pulse density modulation, has high control accuracy, and can achieve continuously adjustable high-voltage, high-frequency, and high-fidelity AC output; and the modulation method is flexible, which improves the system's dynamic response and anti-interference performance.

[0029] (2) The present invention proposes a parameterized high-voltage modulated AC power supply for plasma generation, which has a compact structure and is suitable for integrated applications and various types of plasma excitation systems, thereby enhancing the system adaptability and versatility.

[0030] (3) The present invention proposes a parametric high-voltage modulated AC power supply for plasma generation, which reduces the component temperature by optimizing the air flow path and ensures thermal stability during high-power and high-frequency operation.

[0031] (4) The present invention proposes a parametric high-voltage modulated AC power supply for plasma generation. By insulating the high-voltage transformer with an integral silicone covering, the system has good insulation performance and enhances the safety and reliability of the power supply operation.

[0032] (5) The present invention proposes a parameterized high-voltage modulated AC power supply for plasma generation, with a control system based on STM32 and good scalability and human-computer interaction interface support. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 is a circuit block diagram of an embodiment of the present invention;

[0034] Figure 2 is a circuit block diagram of a DC boost module according to an embodiment of the present invention;

[0035] Figure 3 This is a diagram of the main control peripheral circuit of the boost circuit according to an embodiment of the present invention;

[0036] Figure 4 is a circuit diagram of a boost module according to an embodiment of the present invention;

[0037] Figure 5 is a circuit diagram of a controller pulse drive circuit according to an embodiment of the present invention;

[0038] Figure 6 This is a timing diagram of the switch drive signal of the full-bridge circuit according to an embodiment of the present invention;

[0039] Figure 7 is a peripheral circuit diagram of a driver chip according to an embodiment of the present invention;

[0040] Figure 8 4 is a circuit diagram of a phase-shifted full-bridge inverter module according to an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0042] like Figure 1 As shown, a parameterized high-voltage modulated AC power supply for plasma generation is characterized in that the power supply includes:

[0043] A DC boost module, which uses a BOOST circuit topology to boost the input low-voltage DC power supply to high-voltage DC;

[0044] An inverter module, wherein the inverter module adopts a phase-shifted full-bridge inverter circuit to convert the high-voltage direct current into a high-frequency alternating current signal;

[0045] A high-voltage transformer, connected to the output end of the inverter module, for further boosting the high-frequency AC signal for output;

[0046] The control module uses an STM32 chip to implement PDM control for accurately controlling the output voltage and modulation parameters. The PDM is pulse density modulation.

[0047] Furthermore, the control module adopts an STM32 chip to achieve precise control of the output voltage, frequency and modulation frequency, and the control module can be wirelessly controlled through an external Bluetooth module, thereby enabling a mobile device or computer to remotely adjust the output voltage and other parameters.

[0048] Further, the bluetooth module is connected through the serial communication interface (USART) of STM32 chip, and the built-in serial communication protocol stack of STM32 chip supports two-way data transmission with bluetooth module. The bluetooth module adopts the low-power bluetooth chip supporting BLE 4.2 or above protocol, and built-in GATT service structure, can realize bluetooth pairing communication with mobile terminal or computer. The user can view system operating state parameters (such as output voltage, frequency, modulation frequency, etc.) in real time through supporting APP or computer software, and send control instructions to STM32 to realize functions such as remote adjustment output voltage and modulation parameters. To enhance anti-interference ability, the bluetooth module is also designed with antenna gain circuit and radio frequency front-end filtering and matching network to ensure stable communication under high voltage and high frequency working environment.

[0049] Furthermore, the high-voltage transformer is insulated by covering the entire transformer with silicone. The insulation treatment includes: after the transformer winding and iron core are encapsulated as a whole, the thermally conductive room-temperature curing silicone is evenly encapsulated inside the transformer casing through an injection molding process. The thickness of the silicone is not less than 3 mm, and the coverage range includes the high-voltage lead wires, the winding layers and the edge of the iron core. A stress buffer structure is provided at the transformer terminal to prevent corona discharge when the packaging material ages or ruptures; the voltage resistance level of the silicone material is not less than 25kV / mm, and the volume resistivity is not less than 10^14Ω·cm.

[0050] Furthermore, the power supply realizes independent adjustment of the output voltage amplitude, AC base frequency and modulation frequency through the control logic of the STM32 chip, combined with the closed-loop feedback control of the BOOST boost circuit, the PWM control of the full-bridge inverter module and the independent modulation timing control; wherein, the adjustment of the output voltage amplitude is to sample the output voltage feedback signal through the STM32 chip, and dynamically adjust the PWM duty cycle of the BOOST circuit to achieve boost regulation; the adjustment of the AC base frequency is completed by adjusting the frequency of the PWM signal in the phase-shifted full-bridge inverter module; the adjustment of the modulation frequency is then performed by an independent timer inside the STM32 to generate a periodic signal and control the periodic change of the output signal pulse density or phase structure.

[0051] Furthermore, the power supply adopts pulse density modulation technology to adjust the output effective voltage without changing the switching frequency, and flexibly adjusts the frequency and modulation parameters according to the needs of the plasma excitation system to meet the requirements under different plasma discharge conditions.

[0052] Furthermore, the power supply parameter ranges are as follows: the output voltage amplitude range is continuously adjustable from 2.5kV to 3.5kV; the output AC fundamental frequency range is continuously adjustable from 50kHz to 100kHz; and the modulation frequency is continuously adjustable from 0Hz to 500Hz.

[0053] Furthermore, the power supply uses high-efficiency heat dissipation materials on the power devices of the inverter module and the DC boost module, and uses aluminum alloy heat sinks in direct contact with the switching devices.

[0054] Furthermore, the airflow channel design adopted by the power supply ensures that the areas where heat is concentrated, namely the inverter circuit and the high-voltage transformer, can be adequately dissipated.

[0055] Furthermore, the power supply function is implemented as follows:

[0056] The input power supply (DC 24V) is boosted to DC 60-90V by a BOOST circuit built based on the TL494 chip. The boosted DC voltage then enters a phase-shifted full-bridge inverter circuit, which consists of four MOSFET power switches. By controlling the phase shift angle between the complementary bridge arms, a high-frequency AC signal (frequency range 50-100kHz) is output. This high-frequency AC signal is then boosted to the required amplitude (2.5-3.5kV) by a high-voltage transformer.

[0057] The BOOST circuit design uses the TL494 chip as the core controller and employs closed-loop PWM regulation to achieve efficient and stable DC boost. The system operates from a 24V DC input, which, after rectification and filtering, is powered by an auxiliary power supply to drive the TL494. The TL494 dynamically adjusts the PWM duty cycle based on the output voltage and current sampling signals, thereby controlling the on-time of the power MOSFET and precisely managing the inductor's energy storage and release, ultimately boosting the low-voltage DC voltage to over 60V. To ensure safe system operation, the design incorporates an overvoltage and overcurrent protection mechanism that promptly shuts off the control signal in the event of an output anomaly, preventing circuit damage. This solution offers advantages such as simple structure, stable control, and high regulation accuracy, making it suitable for downstream inverter power supply systems requiring high voltage and high reliability.

[0058] Figure 3 Designed for the peripheral circuit of the TL494 main control chip, the boost circuit is a BOOST (boost) topology based on the TL494 controller: the input DC realizes energy transmission through the inductor (cooperating with the power switch tube), the inductor stores energy when the switch tube is turned on, and releases energy to the output end through the diode when it is turned off, thereby realizing a boost process in which the output voltage is higher than the input voltage. The TL494 chip integrates functions such as a 5V reference source, a dual-channel error amplifier, an adjustable oscillator, a dead-zone control comparator, and an output driver. Among them, the external RT (pin 6) and CT (pin 5) determine the oscillation frequency, generate a sawtooth wave and feed it into the PWM comparator. The two output pins C1 / E1 and C2 / E2 of the TL494 are configured as power switches through the push-pull configuration of transistors Y1 and Y2, and send the modulated PWM signal to the gate of the power MOSFET (or switch tube) (see Figure 2Simplified block diagram). Output control pin 13 can be selected in single-ended or push-pull mode. This circuit uses push-pull, with Y1 (PNP) and Y2 (NPN) alternately driving the Drive output to enhance switch drive capability. The TL494 generates a PWM reference using an internal oscillator. It compares the error signal from the feedback loop with the sawtooth waveform and adjusts the output transistor duty cycle to stabilize the output voltage at the set value.

[0059] The control system is based on the STM32F103 chip. Figure 4 , embedded PDM algorithm module, adopts complementary PWM output mode, drives two half-bridges respectively, configures dead time to prevent direct conduction of upper and lower tubes, and adds phase dynamic adjustment interface on the basis of PDM modulation to enhance modulation flexibility.

[0060] The system implements pulse density modulation control via a high-frequency PWM signal output by the STM32 at a fixed switching frequency of 50 to 100 kHz. This method modulates the ratio (density) of "1" (high level) and "0" (low level) occurrences in the output PWM sequence, rather than directly changing the frequency. To increase the effective AC output voltage, the density of high-level pulses in the high-frequency PWM sequence increases; conversely, to decrease the output voltage, the density of high-level pulses decreases.

[0061] The STM32F103's advanced timers (such as TIM1) generate four complementary PWM signals to drive the two arms of the full-bridge. The outputs of the top and bottom transistors in each arm are complementary (one is on when the other is off), and appropriate dead-band is inserted between them to prevent short circuits caused by simultaneous conduction of the top and bottom transistors in the same arm. This dead-band protection is implemented by delaying the turn-on of one switch (typically a few microseconds) after the other switches turn on, thus preventing overcurrent caused by transient overlapping conduction.

[0062] Figure 5This is a schematic diagram of a full-bridge inverter circuit. This inverter module uses boosted high-voltage DC (60-90V) as input. The full-bridge, comprised of four MOSFETs (Q1-Q4), alternately conducts to convert DC energy into high-frequency AC energy. Specifically, during one half-cycle, the top-left transistor Q1 and the bottom-right transistor Q4 conduct simultaneously, with current flowing from the 60V bus through Q1, the transformer primary, Q4, and finally ground. In the next half-cycle, the bottom-left transistor Q3 and the top-right transistor Q2 conduct, with the current flowing in the opposite direction. This results in a bidirectional AC voltage on the transformer primary. By continuously alternating diagonal MOSFET pairs, energy from the DC bus is fed into the high-voltage transformer, achieving high-frequency, high-voltage AC output. The full-bridge inverter utilizes phase-shift control, adjusting output power by varying the phase difference between the PWM signals of the upper and lower bridge arms. In a phase-shifted full-bridge, the MOSFET junction capacitance and the transformer leakage inductance form a resonant circuit, causing each switch to conduct at near-zero voltage (zero voltage turn-on), significantly reducing switching losses and improving conversion efficiency.

[0063] The system introduces an adjustable phase difference (phase shift angle) between the PWM signals of the left and right bridge arms. By varying the phase shift angle, the order and duration of the conduction of the two half-bridges can be changed, thereby adjusting the output voltage amplitude and power. Control strategies typically phase-shift the signal of one bridge arm (the leading arm) relative to the other (the lagging arm). The phase shift amount is determined by closed-loop control feedback to achieve dynamic power regulation. The STM32's asymmetric PWM mode supports setting separate upper and lower count comparison values ​​under center-symmetric counting, simplifying the generation of phase-shifted PWM signals.

[0064] During application, users can set output parameters through the human-computer interface, and the system adjusts the output waveform based on the feedback signal. The device is suitable for a variety of high-voltage excitation scenarios, such as dielectric barrier discharge (DBD), plasma jet devices, and ozone generators.

[0065] The power supply system proposed in the present invention has a reasonable design, advanced control strategy and stable performance. It is suitable for stable excitation of plasma devices under complex working conditions and is of great significance to improving the overall performance of plasma equipment.

[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A parameterized high-voltage modulated AC power supply for plasma generation, characterized in that: The power supply comprises: A DC boost module, which uses a BOOST circuit topology to boost the input low-voltage DC power supply to high-voltage DC; An inverter module, wherein the inverter module adopts a phase-shifted full-bridge inverter circuit to convert the high-voltage direct current into a high-frequency alternating current signal; A high-voltage transformer, connected to the output end of the inverter module, for further boosting the high-frequency AC signal for output; The control module uses an STM32 chip to implement PDM control for accurately controlling the output voltage and modulation parameters. The PDM is pulse density modulation.

2. A parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The control module uses an STM32 chip to achieve precise control of the output voltage, frequency and modulation frequency. The control module can also be wirelessly controlled via an external Bluetooth module, thereby enabling remote adjustment of the output voltage and other parameters by a mobile device or computer.

3. A parameterized high-voltage modulated AC power supply for plasma generation according to claim 2, characterized in that: The Bluetooth module is connected to the STM32 chip through a serial communication interface. The STM32 chip has a built-in serial communication protocol stack, which can realize two-way data transmission between the Bluetooth module and the main control chip. The Bluetooth module adopts a low-power Bluetooth chip that supports BLE 4.2 or above protocols, and pairs and communicates with the host computer or mobile terminal through the GATT service structure. The user reads the system operating parameters including output voltage, frequency, modulation frequency, etc. in real time through the mobile terminal APP or computer software, and sends instructions to the STM32 to remotely adjust the output parameters of the system. The Bluetooth module is equipped with antenna gain design and RF front-end matching circuit to ensure communication stability and data integrity in high-frequency, high-voltage electromagnetic interference environment.

4. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The high-voltage transformer is insulated by integrally covering it with silicone. The insulation treatment includes: after the transformer windings and iron core are integrally encapsulated, thermally conductive room-temperature curing silicone is evenly encapsulated inside the transformer housing through an injection molding process. The silicone has a thickness of not less than 3 mm and covers the high-voltage lead wires, the spaces between winding layers, and the edges of the iron core. A stress buffer structure is provided at the transformer terminals to prevent corona discharge when the encapsulation material ages or ruptures. The silicone material has a withstand voltage rating of not less than 25 kV / mm and a volume resistivity of not less than 10^14 Ω·cm.

5. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The power supply realizes independent adjustment of output voltage amplitude, AC base frequency and modulation frequency through the control logic of the STM32 chip, combined with the closed-loop feedback control of the BOOST boost circuit, the PWM control of the full-bridge inverter module and the independent modulation timing control. The output voltage amplitude is adjusted by sampling the output voltage feedback signal through the STM32 chip and dynamically adjusting the PWM duty cycle of the BOOST circuit to achieve boost regulation. The AC base frequency is adjusted by adjusting the frequency of the PWM signal in the phase-shifted full-bridge inverter module. The modulation frequency is adjusted by an independent timer inside the STM32 to generate a periodic signal and control the periodic change of the output signal pulse density or phase structure.

6. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The power supply adopts pulse density modulation technology to adjust the output effective voltage without changing the switching frequency, and flexibly adjusts the frequency and modulation parameters according to the needs of the plasma excitation system to meet the requirements under different plasma discharge conditions.

7. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The power supply parameter ranges are as follows: the output voltage amplitude is continuously adjustable from 2.5kV to 3.5kV; the output AC fundamental frequency is continuously adjustable from 50kHz to 100kHz; and the modulation frequency is continuously adjustable from 0Hz to 500Hz.

8. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The power supply adopts high-efficiency heat dissipation materials on the power devices of the inverter module and the DC boost module, and uses aluminum alloy heat sinks to directly contact the switch devices.

9. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The airflow channel design adopted by the power supply ensures that the areas where heat is concentrated, namely the inverter circuit and the high-voltage transformer, can be fully cooled.

10. The parameterized high-voltage modulated AC power supply for plasma generation according to claim 1, characterized in that: The power supply achieves its functions through the following steps: Step S1: Boost the input low-voltage DC to high-voltage DC through a BOOST circuit designed based on the TL494 chip; Step S2: converting the boosted high-voltage DC into a high-frequency AC signal through a phase-shifted full-bridge inverter circuit; Step S3: further boosting the high-frequency AC signal through a high-voltage transformer for output; Step S4: Accurately control the output voltage, frequency and modulation frequency parameters by pulse density modulation.

Images