Laser based on top surface HR layer and planar metal grating and preparation method thereof
By adopting an external cavity laser structure with a top surface HR layer and a planar metal grating, the problems of wide linewidth and high manufacturing cost of existing InP-based DF optoelectronic device lasers are solved, the narrow linewidth performance and low-cost production of the laser are achieved, and the transmission and integration efficiency of optical signals are improved.
Patent Information
- Application Number
- CN202510720976.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-30
- Publication Date
- 2025-09-16
- Estimated Expiration
- 2045-05-30
AI Technical Summary
The existing InP-based DF optoelectronic device laser has a wide linewidth in the 1550nm band, which is difficult to meet the needs of quantum communication, coherent optical communication and terahertz photonics. At the same time, the manufacturing cost is high, the grating etching process is complex, the reflectivity is low, the power consumption is high, and the optical signal transmission and integration efficiency is low.
An external cavity laser structure based on a top surface HR layer and a planar metal grating is adopted. The grating is precisely processed through electron beam lithography and ICP etching technology, combined with magnetron sputtering to deposit the Cr/Au layer to achieve high reflectivity and flatness, abandon the InP secondary epitaxial process, simplify the process flow, and improve product performance consistency and yield.
It significantly reduces the line width of the laser, improves the reflection filtering efficiency and the purity of the Bragg reflection spectrum, reduces production costs, enhances the output power and stability of the laser, and improves the transmission and integration efficiency of optical signals.