A three-axis hall magnetic sensor chip and a hall magnetic sensor

Abstract

The application discloses a three-axis Hall magnetic sensor chip and a Hall magnetic sensor, which comprises a magnetizer and first and second Hall element groups arranged in a plane and spaced from each other. The magnetizer is arranged above the Hall elements, and the orthographic projection of the magnetizer on the Hall plane has a first direction symmetry axis and a second direction symmetry axis which are orthogonal to each other. The first Hall element group comprises two first Hall elements which are connected in an anti-differential mode, the magnetic induction center of the two first Hall elements is located on the first direction symmetry axis, and the two first Hall elements are symmetrically arranged with respect to the second direction symmetry axis. The second Hall element group comprises two second Hall elements which are located on the same side of the first direction symmetry axis and are symmetrically arranged with respect to the second direction symmetry axis. The magnetic induction center of the two second Hall elements is perpendicular to the line between the orthogonal intersection of the first direction symmetry axis and the second direction symmetry axis, and the magnetizer is located on one side of the line between the magnetic induction centers of the two second Hall elements. The application can realize a high signal suppression ratio between axes and directly output a Z-axis signal.

Description

Technical Field

[0001] This application relates to the field of magnetic sensing technology, and in particular to a triaxial Hall magnetic sensing chip and a Hall magnetic sensor. Background Technology

[0002] A three-axis Hall magnetic sensor chip is a three-axis magnetic sensor chip that uses Hall elements to realize three-dimensional magnetic field detection. It can simultaneously sense magnetic fields in all directions in three-dimensional space. If three-dimensional magnetic field detection can be achieved at a low cost, it will have broad application prospects in various three-dimensional space measurement and control fields such as mobile phone navigation and drone attitude measurement.

[0003] One type of triaxial Hall magnetic sensing chip in related technologies arranges Hall elements in a planar manner and uses a magnetizing body disposed on the Hall elements to "twist" the horizontal magnetic field to a detectable vertical direction at the edge region. This allows for the detection of not only the magnetic field in the Z-axis direction (the magnetic induction direction of the Hall element) but also the magnetic field in the horizontal direction, achieving magnetic field detection in three axial directions on the same substrate: the X-axis, Y-axis, and Z-axis. However, triaxial Hall sensing chips in related technologies still suffer from problems such as large size, high cost, and insufficient sensitivity. Especially in scenarios requiring an independent Z-axis signal, related technologies necessitate the addition of a separate Z-axis Hall element. However, due to the large-area magnetic field distortion caused by the magnetizing body, forcibly integrating the Z-axis Hall element with the X and Y axes results in low inter-axis isolation performance and significant signal crosstalk. Furthermore, keeping the Z-axis Hall element far from the magnetizing body wastes chip space and increases cost. Summary of the Invention

[0004] To address the problems of existing technologies, this application provides a triaxial Hall magnetic sensing chip and a Hall magnetic sensor. The technical solution is as follows:

[0005] On the one hand, a three-axis Hall magnetic sensing chip is provided, comprising:

[0006] A first Hall element group and a second Hall element group that are spaced apart from each other and arranged in a plane;

[0007] A magnet is disposed on the first Hall element group and the second Hall element group. The orthogonal projection of the magnet onto the Hall plane has an orthogonal first directional axis of symmetry and a second directional axis of symmetry, and the first direction and the second direction are located on the Hall plane.

[0008] The first Hall element group includes two first Hall elements whose magnetic induction centers are located on the first direction axis of symmetry and are symmetrically arranged about the second direction axis of symmetry. The two first Hall elements are connected in an anti-differential manner. The first Hall element group is used to detect the magnetic field in a third direction, which is orthogonal to the Hall plane.

[0009] The second Hall element group includes two second Hall elements located on the same side of the first directional axis of symmetry and symmetrically arranged about the second directional axis of symmetry. The lines connecting the magnetic induction centers of the two second Hall elements and the orthogonal intersection points of the first and second directional axes of symmetry are perpendicular to each other. The magnet is located on one side of the line connecting the magnetic induction centers of the two second Hall elements. The second Hall element group is used to detect the magnetic field in the horizontal direction.

[0010] In some exemplary embodiments, the orthographic projection of the magnet on the Hall plane at least partially coincides with the magnetic induction region of each of the second Hall elements, and the target angle or target side of the orthographic projection is directly opposite the magnetic induction center of the corresponding second Hall element, wherein the target angle or target side refers to the angle or side close to the corresponding second Hall element.

[0011] In some exemplary embodiments, the magnetic induction centers of the two second Hall elements are respectively aligned with the magnetic induction center of the first Hall element on the corresponding side in the second direction; or,

[0012] The magnetic induction centers of the two second Hall elements are spaced apart from the magnetic induction centers of the first Hall elements on the corresponding sides in the first direction.

[0013] In some exemplary embodiments, the first Hall element group outputs a first signal voltage, which is proportional to the third-direction magnetic field strength;

[0014] The two second Hall elements each output a second signal voltage, which is proportional to the product of the magnetic field in the horizontal direction and the sinusoidal function value of the angle between the corresponding second Hall element and the first direction.

[0015] In some exemplary embodiments, a common working electrode and a common signal ground electrode are also included; the two second Hall elements are respectively provided with a working electrode and two signal electrodes, and the two first Hall elements are respectively provided with a working electrode and an anti-differential connection electrode;

[0016] The common working electrode is collinearly connected to the four working electrodes; the common signal ground electrode is connected to one signal electrode of each of the two second Hall elements, and the other signal electrode of each of the two second Hall elements is used to output the corresponding second signal voltage; the inverse differential connection electrodes of the two first Hall elements are interconnected to output the first signal voltage.

[0017] In some exemplary embodiments, the inverse differential connection electrodes of the two first Hall elements are connected by metal wires on the chip or by bridging on the back-end circuit board.

[0018] In some exemplary embodiments, the magnet is formed based on a photolithography process, the orthographic projection of the magnet is a circle or a regular polygon, and the thickness of the magnet in the third direction is 10 to 500 micrometers.

[0019] On the other hand, a Hall magnetic sensor is provided, comprising:

[0020] Package;

[0021] The three-axis Hall magnetic sensing chip disposed within the package body includes the three-axis Hall magnetic sensing chip described in any of the preceding first aspects.

[0022] The computing circuit is disposed within the package and electrically connected to the triaxial Hall magnetic sensing chip.

[0023] Multiple pins are distributed on the outside of both sides of the package and arranged symmetrically.

[0024] In some exemplary embodiments, the computing circuit includes an analog computing circuit or a digital computing circuit.

[0025] On the other hand, this application provides an electronic device that includes the Hall magnetic sensor as described above.

[0026] The triaxial Hall magnetic sensing chip of this application embodiment includes a magnetizing body and a first Hall element group and a second Hall element group that are spaced apart and arranged in a planar manner. The magnetizing body is disposed on the first Hall element group and the second Hall element group. The orthogonal projection of the magnetizing body on the Hall plane has an orthogonal first directional axis of symmetry and a second directional axis of symmetry. The first direction and the second direction are located in the Hall plane. The first Hall element group includes two first Hall elements whose magnetic induction centers are located on the first directional axis of symmetry and are symmetrically arranged about the second directional axis of symmetry. The two first Hall elements are connected in an anti-differential manner, so that the first Hall element group is used to detect the magnetic field in the vertical direction orthogonal to the Hall plane. The second Hall element... The assembly includes two second Hall elements located on the same side of the first directional axis of symmetry and symmetrically arranged about the second directional axis of symmetry. The magnetic induction centers of the two second Hall elements are perpendicular to the line connecting the orthogonal intersection of the first and second directional axes of symmetry. A magnet is located on one side of the line connecting the magnetic induction centers of the two second Hall elements, so that the assembly of second Hall elements can be used to detect the magnetic field in the horizontal direction. This achieves high isolation and high precision triaxial magnetic field detection, resulting in a high inter-axis signal suppression ratio. It also enables miniaturized, integrated, and low-cost fabrication of planar triaxial Hall magnetic sensing chips. Furthermore, it can directly output Z-axis signals, improving the flexibility and applicability of the triaxial Hall magnetic sensing chip. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of a three-axis Hall magnetic sensing chip provided in an embodiment of this application;

[0029] Figure 2 This is a schematic diagram of another three-axis Hall magnetic sensing chip provided in the embodiments of this application;

[0030] Figure 3 This is a schematic diagram of another three-axis Hall magnetic sensing chip provided in the embodiments of this application;

[0031] Figure 4 This is a schematic diagram of the deflection magnetic field of the magnet and its influence on the Z-axis provided in the embodiments of this application;

[0032] Figure 5 This is a schematic diagram of the structure of a Hall magnetic sensor provided in an embodiment of this application;

[0033] Figure 6 This is a schematic diagram of another Hall magnetic sensor provided in an embodiment of this application;

[0034] Figure 7 This is a schematic diagram of another Hall magnetic sensor provided in an embodiment of this application. Detailed Implementation

[0035] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0036] It should be noted that, in the description of this application, the following definitions shall apply unless a different definition is given elsewhere in the claims or this specification. All numerical values, whether or not explicitly indicated, are defined herein as being modified by the term "about". The term "about" generally refers to a range of numerical values ​​that a person skilled in the art would consider equivalent to the stated values ​​to produce substantially the same properties, functions, results, etc. A range of numerical values ​​indicated by a low value and a high value is defined as including all numerical values ​​within that range and all subranges included within that range.

[0037] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion.

[0038] It should be noted that, in the description of this application, the terms "on," "above," "over," and "above" should be interpreted in the broadest sense, meaning that a description containing these terms is interpreted as "a component may be disposed on another component in direct contact, or there may be an intermediate component or layer between the components." Furthermore, for ease of description, this application may also use spatial relative terms such as "below," "under," "below," "on," "above," "lower," and "upper" to describe the relationship between one element or component and another element or component shown in the accompanying drawings. In addition to the orientations described in the figures, spatial relative terms are also intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90° or otherwise), and the spatial relative descriptive terms used in this application can be interpreted accordingly.

[0039] It should be understood that the terms “consistent,” “perpendicular,” and “orthogonal” used in this application refer to basic consistency or basic perpendicularity that meet the requirements of process error, and do not refer to absolute consistency or absolute perpendicularity in a physical sense.

[0040] It should be understood that the terms "plane" and "surface" used in the embodiments of this application, such as "first plane" and "second plane", refer to the XY plane of magnetic field detection, corresponding to the XY plane of Hall detection of the triaxial Hall magnetic sensing chip. "Magnetic field of the plane" and "magnetic field in the horizontal direction" refer to the magnetic field in the direction parallel to the XY plane. "First direction" and "second direction" refer to the X direction or Y direction. "Thickness direction", "longitudinal direction", "vertical direction" or "third direction" refer to the Z direction relative to the XY plane.

[0041] The following combination Figures 1-4 This application introduces a three-axis Hall magnetic sensing chip according to embodiments of the present application. It is understood that the three-axis Hall magnetic sensing chip shown in the accompanying drawings is merely one specific embodiment of the technical solution in this application, and the three-axis Hall magnetic sensing chip in this application may include fewer or more structural features, and is not limited to the device structure described in the accompanying drawings.

[0042] See Figures 1-4 The triaxial Hall effect magnetic sensing chip 100 includes a magnetizing element 110 and a first Hall element group and a second Hall element group arranged in a planar manner and spaced apart from each other. The magnetizing element 110 is disposed on the first Hall element group and the second Hall element group. The first Hall element group 120 and the second Hall element group 130 are arranged in a planar manner. The first Hall element group includes two first Hall elements 120, and the second Hall element group includes two second Hall element groups 130. The first Hall elements 120 and the second Hall elements 130 are elements capable of detecting magnetic fields based on the Hall effect. Specifically, the two first Hall elements 120 and the two second Hall element groups 130 are fabricated from the same wafer and distributed on the wafer.

[0043] Among them, the magnetizer 110 is a magnetic body with magnetic-convergence function, which enables the magnetic body to be magnetically focused, and its magnetic field strength is detected by a Hall element. It is usually made of a high magnetic permeability material.

[0044] The orthographic projection of the magnet 110 onto the Hall plane has an orthogonal first directional axis of symmetry 111 and a second directional axis of symmetry 112. These first and second directions are located within the Hall plane, which refers to the plane in which the first and second Hall element groups are arranged. Specifically, the orthographic projection of the magnet 110 onto the Hall plane is symmetrical about the first directional axis of symmetry 111 and about the second directional axis of symmetry 112. The first and second directional axes of symmetry 111 and 112 have an orthogonal intersection point O, which is the center of symmetry of the orthographic projection of the magnet 110 onto the Hall plane. Therefore, the magnet 110 is centrally symmetric. In a specific implementation, the first and second directions can be the X and Y directions, respectively. The Hall plane is an XY plane. The first directional axis of symmetry 111 can be referred to as the X-axis or X-symmetry axis, and the second directional axis of symmetry 112 can be referred to as the Y-axis or Y-symmetry axis.

[0045] The magnetic induction centers of the two first Hall elements 120 are located on the first directional symmetry axis 111 and symmetrically arranged about the second directional symmetry axis 112. These two first Hall elements 120 are connected in a counter-differential manner so that the first Hall element group can detect a third-direction magnetic field. This third-direction is orthogonal to the Hall plane (XY plane). Specifically, the third-direction can be the Z-direction perpendicular to the Hall plane (XY plane), and therefore can also be called the Z-axis direction. The counter-differential connection changes the sensitivity of the original differential connection to differential signals to sensitivity to signals in the same direction after signal reversal, thereby detecting the Z-axis. Specifically, the two first Hall elements 120 are distributed on both sides of the magnetizer 110, such as... Figures 1 to 4 Hall C and Hall D in the image can overlap with the magnet 110, such as... Figure 1 and Figure 3As shown, it can also not overlap with the magnet 110, such as Figure 2 As shown, the positional relationship between the two first Hall elements 120 and the magnet 110 is symmetrical about the second direction (Y direction). The magnetic induction center of the first Hall element 120 refers to the center position of its magnetic induction region. This magnetic induction region refers to the effective device region of the first Hall element 120 used to respond to magnetic fields, that is, the device region in the Hall element that is sensitive to magnetic fields and can generate magnetic induction signals, such as... Figures 1 to 3 The gray cross-shaped area shown.

[0046] For example, the magnetic induction regions of the two first Hall elements 120 in the first Hall element group have the same structure and material. By setting the same structure and material, the Hall coefficients of the two first Hall elements 120 are consistent, which facilitates magnetic field detection calibration and calculation.

[0047] The two second Hall elements 130 are located on the same side of the first directional symmetry axis 111 and are symmetrically arranged about the second directional symmetry axis 112. The lines (140, 150) connecting the magnetic induction centers of each of the two second Hall elements 130 to the orthogonal intersection point O of the first directional symmetry axis 111 and the second directional symmetry axis 112 are perpendicular to each other. The magnetizing body 110 is located on one side of the line connecting the magnetic induction centers of the two second Hall elements 130, so that the second Hall element 130 is used to detect the magnetic field in the horizontal direction, which is parallel to the XY plane. Figure 1 As shown, the horizontal magnetic field B h It has an angle with the X direction .

[0048] Specifically, the two second Hall elements 130 are located on the same side of the first directional symmetry axis 111 and are symmetrically arranged about the second directional symmetry axis 112, as shown below. Figures 1 to 4 Hall elements A and B are located in the Hall plane. A magnet 110 is positioned on one side of the line connecting the magnetic induction centers of the two second Hall elements 130, with its center of symmetry located in the middle of this line. This forms an offset magnet configuration. The orthographic projection of this offset magnet onto the Hall plane does not exceed the line connecting the magnetic induction centers of the two second Hall elements 130, and the connecting lines 140 and 150 are perpendicular to each other, thus constituting a detection field B in the horizontal direction. h The structure allows for the generation of two orthogonal horizontal magnetic field components: the magnetic field component in the first direction (X direction) and the magnetic field component in the second direction (Y direction). The magnetic induction center of the second Hall element 130 refers to the center position of its magnetic induction region, which is the effective device region used to respond to the magnetic field. Figures 1 to 3 The gray cross-shaped area shown.

[0049] For example, the magnetic sensing regions of the two second Hall elements 130 in the second Hall element group have the same structure and material. By using the same structure and material, the Hall coefficients of the two second Hall elements 130 are consistent, which facilitates magnetic field detection calibration and calculation. In a preferred embodiment, the magnetic sensing regions of the two first Hall elements 120 have the same structure and material as the magnetic sensing regions of the two second Hall elements 130, thereby reducing the difficulty of fabrication.

[0050] For example, such as Figure 2 and Figure 3 As shown, the two second Hall elements 130 can be distributed above the first directional axis of symmetry 111, and the magnet 110 is located below the line connecting the magnetic induction centers of the two second Hall elements 130; or it can be as follows: Figure 1 As shown, the two second Hall elements 130 are distributed below the first directional axis of symmetry 111, and the magnet 110 is located above the line connecting the magnetic induction centers of the two second Hall elements 130.

[0051] The above-described technical solution of this application embodiment forms four Hall elements arranged laterally (X direction) and separated longitudinally (Y direction) on the same wafer plane. These four Hall elements are divided into two groups. The first Hall element group includes two first Hall elements 120 whose magnetic induction centers are located on the first directional symmetry axis 111 and symmetrically arranged about the second directional symmetry axis 112. These two first Hall elements 120 are connected in an anti-differential manner, allowing the first Hall element group to detect a magnetic field in a third direction (Z direction) orthogonal to the Hall plane. The second Hall element group includes two second Hall elements 130 located on the same side of the first directional symmetry axis 111 and symmetrically arranged about the second directional symmetry axis 112. The line 140 connecting the magnetic induction center of one second Hall element 130 to the orthogonal intersection point O is perpendicular to the line 150 connecting the magnetic induction center of the other second Hall element 130 to the orthogonal intersection point O. A magnet 110 is located on one side of the line connecting the magnetic induction centers of the two second Hall elements 130, allowing the second Hall element group to detect a horizontal magnetic field B. h This technology combines Z-axis Hall pair (i.e., the first Hall element group) with orthogonal direction detection technology of a magnet, realizing a complete high-isolation triaxial Hall magnetic sensing chip composed of a high-isolation Z-axis Hall pair, two second Hall elements for orthogonal detection of the horizontal magnetic field, and a magnet. It achieves high isolation and high precision triaxial magnetic field detection, thus achieving a high inter-axis signal suppression ratio, miniaturization, integration, and low-cost fabrication of planar triaxial Hall magnetic sensing chips. At the same time, it can also directly output Z-axis signals, improving the flexibility and applicability of triaxial Hall magnetic sensing chips.

[0052] In some exemplary embodiments, the orthographic projection of the magnet 110 on the Hall plane at least partially coincides with the magnetic induction region of each second Hall element 130, and the target angle or target side of the orthographic projection is directly opposite the magnetic induction center of the two second Hall elements 130. The target angle or target side refers to the angle or side close to the corresponding second Hall element 130, thereby improving chip integration and magnetic field detection accuracy while reducing chip manufacturing costs.

[0053] This at least partial overlap includes precisely fitting to completely cover the magnetic induction region of each second Hall element 130. Specifically, as shown... Figure 2 and Figure 3 The image shows an example of the smallest orthographic projection of the magnet 110 onto the Hall plane. The boundary of this smallest orthographic projection perfectly matches the inner edge of the magnetic induction region of the corresponding second Hall element 130. Here, the inner edge refers to the portion of the magnetic induction region's outline near the orthogonal intersection point O. Figure 1 The image shown is another example of the orthographic projection of the magnet 110 onto the Hall plane, which covers a portion of the magnetic induction region of each second Hall element 130.

[0054] In some exemplary embodiments, the magnetic induction centers of the two second Hall elements 130 are respectively aligned with the magnetic induction centers of the corresponding first Hall elements 120 in the second direction (Y direction), such as... Figure 3 As shown, the magnetic induction center of Hall A is aligned with the magnetic induction center of Hall C in the Y direction, and the magnetic induction center of Hall B is aligned with the magnetic induction center of Hall D in the Y direction, thus obtaining a more compact triaxial Hall magnetic sensing chip structure with concentrated magnetism, which is beneficial to improve device integration, reduce device cost and improve reliability.

[0055] In some other exemplary embodiments, the magnetic induction centers of the two second Hall elements 130 are respectively spaced from the magnetic induction centers of the corresponding first Hall elements 120 in a first direction (X direction), such as... Figure 1 and Figure 2 As shown, the magnetic induction center of Hall A is spaced apart from the magnetic induction center of Hall C in the X direction, and the magnetic induction center of Hall B is spaced apart from the magnetic induction center of Hall D in the X direction. This allows the first Hall element 120 and the second Hall element 130, which are located on the same side in the second direction, to be staggered in the first direction. This is beneficial to improving the integration of the triaxial Hall magnetic sensing chip and the flexibility of the structure.

[0056] In some exemplary embodiments, the first Hall element group 120 outputs a first signal voltage, which is proportional to the magnetic field strength in the third direction (Z direction); the two second Hall elements 130 each output a second signal voltage, which is proportional to the magnetic field strength in the horizontal direction (B direction). hThe product of the sinusoidal function value of the angle between the corresponding second Hall element and the first direction (X direction). The sinusoidal function value includes both sine and cosine values.

[0057] Specifically, such as Figures 1 to 3 As shown, the two orthogonal axes of the signal-sensitive horizontal magnetic field of the two second Hall elements 130 intersect the X-axis and Y-axis of symmetry at 45 degrees, respectively, and their deflected magnetic field lines are as follows: Figure 4 As shown in (a), the second signal voltage output by each of the two second Hall elements 130 is proportional to the horizontal magnetic field B. h The product of the sinusoidal function values ​​of the angle with respect to the X direction, if the second Hall element 130 on the left side of the Y-axis of symmetry is called Hall A, and the second Hall element 130 on the right side of the Y-axis of symmetry is called Hall B, then Figure 1 In the middle, the second signal voltage output by Hall A The second signal voltage output by Hall B ; and Figure 2 and Figure 3 In the structure shown, the second signal voltage output by Hall A is... The second signal voltage output by Hall B .in, / This represents the gain coefficient of the corresponding second Hall element for the horizontal magnetic field. This is true when the magnet is precisely positioned and the design and fabrication conditions of the two Hall elements are consistent. = .

[0058] Two first Hall elements 120 are connected in an anti-differential manner, so that the output signal of the first Hall element group is the sum of the two individual Hall signals. Ideally, due to symmetry, the effects of the focusing magnet 110 and the horizontal magnetic field on the Hall signals of the two first Hall elements 120 are opposite and add up to zero. For example, under the action of the focusing magnet 110, the left half of the magnetic field in the X direction has an upward Z-axis magnetic field component, and the right half has a downward Z-axis magnetic field component, and the strengths of these two magnetic fields are equal. Thus, the magnetic field sensed by the first Hall element on the left is equal in magnitude and opposite in direction to the magnetic field sensed by the first Hall element on the right, and adds up to zero. Figure 4 As shown in (b), the first Hall element 120 on the left side of the Y-axis of symmetry is called Hall C, and the first Hall element 120 on the right side of the Y-axis of symmetry is called Hall D. Their signals are only proportional to the magnetic field strength in the Z-axis direction, i.e. Figures 1 to 3 The first signal voltage output by the first Hall element group , The gain coefficient characterizing the magnetic field component in the Z direction. This represents the magnetic field along the Z-axis.

[0059] In practice, the two first Hall elements 120 can be fabricated on the same wafer, and the positional relationship of their Hall patterns can be ensured based on photolithography, thereby ensuring the consistency of the parameters of the two first Hall elements 120.

[0060] For example, the magnet 110 is formed by photolithography. The orthographic projection of the magnet is a circle or a regular polygon, and the thickness of the magnet 110 in the third direction is 10 to 500 micrometers. The photolithography process for forming the magnet 110 on the Hall wafer enables the magnet to have precise positioning accuracy, ensuring the consistency of parameters of the two second Hall elements 130.

[0061] For example, the magnet 110 is centrally symmetric, and its orthographic projection onto the Hall plane can be a circle or a regular polygon. For instance, the regular polygon could be... Figure 1 The regular quadrilateral shown Figure 2 The regular hexagon shown.

[0062] For example, such as Figure 2 As shown, the triaxial Hall magnetic sensing chip also includes a common working electrode 160 and a common signal ground electrode 170. The two second Hall elements 130 are respectively provided with a second working electrode 131 and two signal electrodes 132. The two first Hall elements 120 are respectively provided with a first working electrode 121 and a differential connection electrode 122. The common working electrode 160 is collinearly connected to the four working electrodes (i.e., the two second working electrodes 131 and the two first working electrodes 121). The common signal ground electrode 170 is connected to one signal electrode of each of the two second Hall elements 130. The other signal electrode of each of the two second Hall elements 130 is used to output a corresponding second signal voltage. The differential connection electrodes 122 of the two first Hall elements are interconnected to output a first signal voltage.

[0063] Specifically, the common working electrode 160 includes a common working positive electrode (shown as + in the figure) and a common working negative electrode (shown as - in the figure). The common working positive electrode is connected in line with the four working positive electrodes, and the common working negative electrode is connected in line with the four working negative electrodes. In this way, the electrodes of the same polarity are connected in line, which simplifies the IC circuit wiring.

[0064] One signal electrode of each of the two second Hall elements 130 is connected to a common signal ground electrode 170, such that the second signal voltage (e.g., V) output by the other signal electrode of the two second Hall elements 130 A V B Both are relative to the common signal ground electrode 170 voltage. The inverse differential connection electrodes 122 of the two first Hall elements 120 are interconnected to output a first signal voltage (such as V). CDThe first signal voltage is sensitive to the same magnetic field but cancels out the opposite magnetic field. Therefore, the influence of the magnet 110 on it is canceled out in the X direction due to the opposite phase, and the residual influence of the Y-axis magnetic field is weak, thus achieving the purpose of high inter-axis suppression ratio and low crosstalk.

[0065] The electrode connection method described above can achieve the output of three signal voltages, wherein the first signal voltage V CD Because the magnetic field strength B is proportional to the Z-axis z Thus utilizing the first signal voltage V CD The magnetic field along the Z-axis can be detected, along with two second signal voltages V. A V B Because it is proportional to B h The product of the sine and cosine of the corresponding angle is used to combine the two second signal voltages V. A V B It can detect the horizontal magnetic field B. h .

[0066] In practical implementation, this can be ensured through design and calibration. Then V A and V B Since the output gain of the signal voltages is the same, dividing these three signal voltages by their respective gain coefficients yields the magnetic field strength in each of the three directions. This division can be achieved by adjusting the coefficients using analog circuits or by programming using mixed-signal circuits. This allows for different applications, leveraging the unique advantages of both analog and digital signals and providing customers with more options.

[0067] For example, the inverse differential connection electrodes of the two first Hall elements 120 are connected by metal wires on the chip or by bridging on the back-end circuit board, thereby improving the structural flexibility of the chip.

[0068] This application also provides a Hall magnetic sensor, comprising: a package; a triaxial Hall magnetic sensing chip disposed within the package, the triaxial Hall magnetic sensing chip including any of the triaxial Hall magnetic sensing chips in this application; a computing circuit disposed within the package and electrically connected to the triaxial Hall magnetic sensing chip; and multiple pins distributed on the exterior of both sides of the package and symmetrically arranged.

[0069] For example, the operational circuit can be an analog or digital calculation circuit. When the operational circuit is an analog calculation circuit, the multiplication, division, and squaring operations of the analog calculation circuit can be used to calculate the square values ​​of the horizontal magnetic field Bh and the Z-axis magnetic field Bz, so as to directly output analog signals, resulting in a triaxial Hall magnetic sensor for directly outputting analog signals. When the operational circuit is a digital calculation circuit, digital circuit calculation can output the magnetic field component signals of three orthogonal axes, namely the X-axis, Y-axis, and Z-axis, resulting in a triaxial Hall magnetic sensor for detecting each magnetic field component.

[0070] Figure 5 The diagram shown is a structural schematic of a Hall magnetic sensor provided in an embodiment of this application. Figure 5 As shown, in the structure of the triaxial Hall magnetic sensing chip 100 in the Hall magnetic sensor 500, the positional relationship between the first Hall element group, the second Hall element group, and the magnet 110 is as follows: Figure 1 The results are consistent with those shown, except for the shape of the magnetizing body 110. The Hall magnetic sensor 500 includes a package 502, a triaxial Hall magnetic sensing chip 100 disposed within the package 502, and an analog calculation circuit 501. The analog calculation circuit 501 is electrically connected to the triaxial Hall magnetic sensing chip 100 and is used to calculate the magnetic field strength B proportional to the Z-axis magnetic field strength output from the first Hall element group (Hall C, Hall D) in the triaxial Hall magnetic sensing chip 100. z The first signal voltage V CD The second signal voltage output by the two second Hall elements 130 (Hall C and Hall D) respectively. and It calculates and directly outputs analog signals.

[0071] Specifically, Figure 5 In the Hall magnetic sensor 500 shown, the horizontal (XY plane) magnetic field B h Z-axis magnetic field B z With Hall signal voltage (express The relationship between the output Hall signal voltage and the voltage is as follows:

[0072]

[0073] in, = = Therefore, using the multiplication, division, square root, and root operations of the analog circuit 501 to perform signal decoding yields:

[0074]

[0075] Therefore, the Hall magnetic sensor 500 can directly output analog signals.

[0076] Figure 6 This is a schematic diagram of another Hall magnetic sensor provided in an embodiment of this application, as shown below. Figure 6 As shown, the structure of the triaxial Hall magnetic sensing chip 100 in the Hall magnetic sensor 600 is similar to... Figure 5 The structure of the triaxial Hall magnetic sensing chip 100 in the Hall magnetic sensor 500 shown is consistent. The Hall magnetic sensor 600 includes a package 602, a triaxial Hall magnetic sensing chip 100 disposed within the package 602, and a digital processing circuit 601. The digital processing circuit 601 is electrically connected to the triaxial Hall magnetic sensing chip 100 and is used to calculate the magnetic field strength B proportional to the Z-axis magnetic field strength output by the first Hall element group (Hall C, Hall D) in the triaxial Hall magnetic sensing chip 100. z The first signal voltage V CD The second signal voltage output by the two second Hall elements 130 (Hall A and Hall B) respectively. and It calculates and outputs the magnetic field component signals of three orthogonal axes, namely the X-axis, Y-axis and Z-axis.

[0077] Specifically, Figure 6 In the Hall magnetic sensor 600 shown, the horizontal magnetic field B h Z-axis magnetic field B z With Hall signal voltage (express The relationship between the output Hall signal voltage and the voltage is as follows:

[0078]

[0079] in, = = Therefore, the signal is solved using the digital processing circuit 601, resulting in:

[0080]

[0081] Therefore, the Hall magnetic sensor 600 can output the magnetic field components of each axis.

[0082] Figure 7 This is a schematic diagram of another Hall magnetic sensor provided in an embodiment of this application, as shown below. Figure 7 As shown, the structure of the triaxial Hall magnetic sensing chip 100 in the Hall magnetic sensor 700 is the same as described above. Figure 3The structure is consistent with that of the triaxial Hall magnetic sensing chip 100 shown. The Hall magnetic sensor 700 includes a package 702, a triaxial Hall magnetic sensing chip 100 disposed within the package 702, and a digital processing circuit 701. The digital processing circuit 701 is electrically connected to the triaxial Hall magnetic sensing chip 100 and is used to calculate the magnetic field strength B proportional to the Z-axis magnetic field strength output by the first Hall element group (Hall C, Hall D) in the triaxial Hall magnetic sensing chip 100. z The first signal voltage V CD The second signal voltage output by the two second Hall elements 130 (Hall A and Hall B) respectively. and It calculates and outputs the magnetic field component signals of three orthogonal axes, namely the X-axis, Y-axis and Z-axis.

[0083] Specifically, Figure 7 In the Hall magnetic sensor 700 shown, the horizontal magnetic field B h Z-axis magnetic field B z With Hall signal voltage (express The relationship between the output Hall signal voltage and the voltage is as follows:

[0084] ; ; ).

[0085] in, = = Therefore, the signal is solved using the digital signal processing circuit 701, resulting in:

[0086]

[0087] Therefore, the Hall magnetic sensor 700 can output the magnetic field components of each axis, and its close arrangement helps to improve device integration, reduce device cost and improve reliability.

[0088] Understandable. Figures 5 to 7 The structure of the Hall magnetic sensor shown is only an example. In practical applications, one or more combinations of the operational circuit and the structure of the triaxial Hall magnetic sensing chip of this application embodiment can be made as needed.

[0089] The Hall magnetic sensor of this application achieves high isolation and high precision triaxial magnetic field detection, so as to achieve high interaxial signal suppression ratio, miniaturization, integration and low cost of manufacturing planar triaxial Hall sensor. It also has the ability to directly output an analog signal proportional to the magnetic field strength, which can provide users with more choices.

[0090] This application also provides an electronic device including any of the three-axis Hall sensor devices described in the embodiments of this application. The electronic device may include any electronic component such as integrated circuits or electronic devices. Because the three-axis Hall sensor device has superior performance, the performance of the electronic device is correspondingly improved.

[0091] The electronic devices in this application embodiment can be selected from any electronic products or devices such as mobile phones, PDAs, tablets, laptops, game consoles, televisions, video compact discs (VCDs), digital video discs (DVDs), navigators, cameras, camcorders, voice recorders, MP3 players, MP4 players, PlayStation Portable (PSPs), and drones. They can also be intermediate products of any electronic devices including the aforementioned differential 3D Hall sensor devices.

[0092] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, the apparatus embodiments are basically similar to the method embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the method embodiments.

[0093] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A triaxial Hall magnetic sensing chip, characterized in that, include: A first Hall element group and a second Hall element group that are spaced apart from each other and arranged in a plane; A magnet is disposed on the first Hall element group and the second Hall element group. The orthogonal projection of the magnet onto the Hall plane has an orthogonal first directional axis of symmetry and a second directional axis of symmetry, and the first direction and the second direction are located on the Hall plane. The first Hall element group includes two first Hall elements whose magnetic induction centers are located on the first direction axis of symmetry and are symmetrically arranged about the second direction axis of symmetry. The two first Hall elements are connected in an anti-differential manner. The first Hall element group is used to detect the magnetic field in a third direction, which is orthogonal to the Hall plane. The first Hall element group outputs a first signal voltage, which is proportional to the magnetic field strength in the third direction; The second Hall element group includes two second Hall elements located on the same side of the first directional axis of symmetry and symmetrically arranged about the second directional axis of symmetry. The lines connecting the magnetic induction centers of the two second Hall elements and the orthogonal intersection points of the first and second directional axes of symmetry are perpendicular to each other. The magnet is located on one side of the line connecting the magnetic induction centers of the two second Hall elements. The second Hall element group is used to detect the magnetic field in the horizontal direction. The orthographic projection of the magnet on the Hall plane at least partially coincides with the magnetic induction region of each of the second Hall elements, and the target angle or target side of the orthographic projection is directly opposite the magnetic induction center of the corresponding second Hall element. The target angle or target side refers to the angle or side close to the corresponding second Hall element. Each of the two second Hall elements outputs a second signal voltage, which is proportional to the product of the magnetic field in the horizontal direction and the sinusoidal function value of the angle between the corresponding second Hall element and the first direction. Each of the two second Hall elements is provided with a working electrode and two signal electrodes, and each of the two first Hall elements is provided with a working electrode and a differential connection electrode. A common working electrode and a common signal ground electrode are provided, wherein the common working electrode is collinearly connected to the four working electrodes; the common signal ground electrode is connected to one signal electrode of each of the two second Hall elements, and the other signal electrode of each of the two second Hall elements is used to output the corresponding second signal voltage; the inverse differential connection electrodes of the two first Hall elements are interconnected to output the first signal voltage.

2. The triaxial Hall magnetic sensing chip according to claim 1, characterized in that, The magnetic induction centers of the two second Hall elements are respectively aligned with the magnetic induction centers of the first Hall elements on the corresponding sides in the second direction; or, The magnetic induction centers of the two second Hall elements are spaced apart from the magnetic induction centers of the first Hall elements on the corresponding sides in the first direction.

3. The triaxial Hall magnetic sensing chip according to claim 1, characterized in that, The two differential connection electrodes of the first Hall elements are connected by metal lines on the chip or by bridging on the back-end circuit board.

4. The triaxial Hall magnetic sensing chip according to any one of claims 1 to 3, characterized in that, The magnet is formed by photolithography. The orthographic projection of the magnet is a circle or a regular polygon. The thickness of the magnet in the third direction is 10 to 500 micrometers.

5. A Hall magnetic sensor, characterized in that, include: Package; The three-axis Hall magnetic sensing chip disposed within the package body includes the three-axis Hall magnetic sensing chip according to any one of claims 1 to 3. The computing circuit is disposed within the package and electrically connected to the triaxial Hall magnetic sensing chip. Multiple pins are distributed on the outside of both sides of the package and arranged symmetrically.

6. The Hall magnetic sensor according to claim 5, characterized in that, The computing circuit includes an analog computing circuit or a digital computing circuit.

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