Preparation method and application of self-assembled silver nanowire array for read-only memory
By forming a silver nanowire array at the junction of the substrate and the baffle, and utilizing the coffee ring effect and voltage-controlled welding, the problems of uneven silver nanowire arrangement and high power consumption of WORM memory in the prior art are solved, achieving low-power data storage effect.
Patent Information
- Application Number
- CN202511565773.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-30
- Publication Date
- 2026-01-23
AI Technical Summary
Existing self-assembly deposition methods for silver nanowires have difficulty in precisely controlling the arrangement and structure of silver nanowires, which affects device performance. Furthermore, WORM memories suffer from high power consumption during writing and reading.
Anhydrous ethanol was used as a solvent. The silver nanowire solution was ultrasonically treated, and elliptical droplets were formed at the interface between the substrate and the baffle. Multiple elliptical rings were formed on the substrate surface using the coffee ring effect, thus preparing a uniformly distributed array of silver nanowires. Data storage was achieved by voltage-controlled welding between the silver nanowires.
This method achieves uniform distribution and regular arrangement of silver nanowire arrays, reduces data storage power consumption, simplifies the fabrication process, and improves the overall performance of the device.
Smart Images
Figure CN121372800A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a method for preparing and applying a self-assembled silver nanowire array for read-only storage, belonging to the field of metal nanomaterial preparation. Background Technology
[0002] With the rapid development of nanotechnology, nanomaterials have shown enormous application potential. As a typical nanomaterial, silver nanowires not only possess the characteristics of one-dimensional nanomaterials but also inherit the high electrical conductivity, high thermal conductivity, and flexibility of bulk silver. Their incomplete coverage on the substrate gives them excellent transparency. Silver nanowire networks, as a conductive structure formed by the interweaving of multiple silver nanowires, show broad application prospects in fields such as transparent electrodes and flexible circuits.
[0003] Self-assembly technology, as a "bottom-up" approach, has been extensively studied in chemistry, physics, biology, and materials engineering. Compared with traditional preparation methods, self-assembly not only allows for precise control of the arrangement, density, and geometry of silver nanowires but also enables the construction of ordered hierarchical structures at different scales, demonstrating significant advantages. Among these, self-assembly utilizing the coffee ring effect is a simple and attractive method for creating interesting surface patterns and structures. When spilled coffee drops dry on a solid surface, dense ring-shaped stains form along the edges of the droplets, commonly known as the coffee ring effect. In some cases, the contact lines do not remain fixed throughout the drying process but can move at some stage, and the stick-slip motion of the contact lines (repeated fixing and unfixing) forms multiple rings. By changing the droplet shape, highly ordered complex structures, such as circles, straight lines, and triangles, can be obtained.
[0004] In the development of storage technology, WORM (Write Once Read Many) memory plays a crucial role in scenarios requiring tamper-proofing and long-term data preservation due to its write-once, read-many characteristic. Resistive random access memory (RRAM) relies on changes in the material's resistance state to achieve data storage. Arraying memory cells allows for higher integration density, fewer pins, and faster access speeds. In silver nanowire networks, the loose stacking of nanowires and the coating of PVP end-capping agent result in extremely high contact resistance. However, the contact resistance between silver nanowires can be significantly reduced under the influence of an external current. When the current is sufficiently large, the increase in local current density leads to hot spot accumulation and heat buildup, causing local welding of the silver nanowire network, significantly reducing resistance, and ultimately achieving the storage of binary data (0 or 1) through resistance changes.
[0005] However, current methods for self-assembling and depositing silver nanowires typically require complex equipment and demanding experimental conditions. Furthermore, they are susceptible to influences from factors such as solution concentration, solvent properties, temperature, and evaporation rate, making it difficult to precisely control the alignment and structure of the silver nanowires. Aggregation or clustering of silver nanowires can occur during self-assembly, affecting not only their alignment order but also potentially leading to short circuits or performance inhomogeneities, thus impacting the overall device performance. In addition, the operating principle of WORM memories relies on the electroresistivity effect, requiring specialized materials and processing conditions. Moreover, WORM memories suffer from high power consumption during both writing and reading. Summary of the Invention
[0006] This invention addresses the challenge of precisely controlling the arrangement and structure of silver nanowires using traditional self-assembly deposition methods, which affects the overall performance of devices and leads to high power consumption during data storage. Therefore, this invention proposes a method for fabricating and applying self-assembled silver nanowire arrays for read-only storage.
[0007] The technical solution adopted by this invention to solve the above problems is: the method for preparing a self-assembled silver nanowire array for read-only storage proposed in this invention includes: Step 1: Prepare a silver nanowire solution using anhydrous ethanol as the solvent, and then place the prepared silver nanowire solution into an ultrasonic machine for ultrasonication. Step 2: Assemble the silver nanowire array fabrication device, which consists of a substrate and a baffle. The substrate is ordinary glass, and the baffle is vertically set at the center of the substrate with its bottom in contact with the substrate. The baffle is used to change the shape of the droplets. Step 3: Clean the glass substrate with anhydrous ethanol and dry it with compressed air. Place the dried substrate and baffle on the heating table for preheating. Step 4: Use a pipette to draw an appropriate amount of the sonicated silver nanowire solution and drop it onto the interface between the substrate and the baffle. Through capillary action, the silver nanowire solution gathers at the interface and forms an elliptical droplet. Step 5: After standing for 5 to 10 minutes, the anhydrous ethanol will completely evaporate. During the standing process, the contact line between the edge of the elliptical droplet and the substrate will undergo stick-slip motion, forming multiple elliptical rings on the substrate surface. The linear array formed in the middle of the elliptical rings is the silver nanowire array. Step 6: Observe the morphology of the silver nanowire array using an optical microscope and a scanning electron microscope.
[0008] Furthermore, in step 1, the mass concentration of the silver nanowire solution is 0.05~0.1 mg / mL, the concentration of anhydrous ethanol is ≥99.7%, the ultrasonic time is 10 minutes, the ultrasonic frequency is 40 kHz, and the length of the silver nanowires in the silver nanowire solution is 1~20 μm, and the diameter is about 30 nm.
[0009] Furthermore, in step 3, the preheating temperature is 60℃ and the preheating time is 1 minute.
[0010] Furthermore, the silver nanowire array observed in step 6 has a width of 3~20μm and a spacing of 10~60μm.
[0011] Applications of self-assembled silver nanowire arrays for read-only storage include: Silver nanowire arrays with a width of 5~8μm and a length of 100μm were selected and current-voltage curve tests were performed. During the test, the applied voltage was changed to write data "0" and data "1" and to erase the written data "1" by overheating and melting the silver nanowire array.
[0012] Furthermore, the test voltage in the current-voltage curve test is 0~10V, and the current-voltage curve test specifically includes: When a voltage less than a preset value is applied, the resistance of the silver nanowire array is greater than 10. 8 ~10 9 Ω, this state is recorded as data "0", and the silver nanowire array in this state is subjected to 20 0~1V cycle tests to ensure the stability of reading data "0" state; By increasing the voltage and setting an upper limit on the current, the silver nanowire array is prevented from melting. When the voltage increases to a preset value, the resistance of the silver nanowire array drops to 10. 4 ~10 5 The resistor Ω is used to write the data "1". The writing voltage is approximately 6~9V, the writing current is approximately 5μA~1mA, the writing power is approximately 64μW~6mA, and the resistance ratio before and after writing is greater than 10. 3 The silver nanowire array after writing was subjected to 20 cycles of 0~1V to ensure the stability of reading the data "1" state. Continue increasing the voltage until the silver nanowire array overheats and melts, erasing the written data "1". Apply a voltage of 0~1V to verify whether it has been erased. If it has not been erased, continue increasing the voltage until the written data "1" is erased.
[0013] Furthermore, after the current-voltage curve test was completed, the silver nanowire array was subjected to in-situ SEM imaging before and after data writing and after data erasure to observe the morphology of the silver nanowire array at each stage. Among them, compared with before writing, the silver nanowires after writing were partially fused together, and after data erasure, the silver nanowire array was fused apart.
[0014] The beneficial effects of this invention are: 1. The present invention does not require complex equipment and harsh experimental conditions in the preparation of silver nanowire arrays. It only uses a simple preparation device to induce a multi-ring pattern coffee ring effect in the silver nanowire solution, resulting in a uniformly distributed and highly regular silver nanowire array. At the same time, the present invention has a fast preparation speed, low cost and simple method, overcoming the problem that it is difficult to accurately control the arrangement and structure of silver nanowires in the prior art, thus affecting the overall performance of the device.
[0015] 2. This invention innovatively achieves data storage through welding between silver nanowires, filling a technological gap. The prepared silver nanowire array can be fused together simply by applying voltage, thereby reducing resistance and enabling data storage without requiring special materials or structures. Furthermore, the high resistance of the silver nanowire array results in low power consumption for writing and reading data. Attached Figure Description
[0016] Figure 1 A flowchart illustrating the method for fabricating a self-assembled silver nanowire array for read-only storage provided by the present invention; Figure 2 A schematic diagram of the silver nanowire array fabrication device provided by the present invention. Figure 3 This is an optical microscope image of a silver nanowire array provided by the present invention. Figure 4 SEM image of the silver nanowire array provided by this invention; Figure 5 The current-voltage curve of the silver nanowire array during the testing process provided by this invention; Figure 6 The data provided for this invention includes a resistance change graph of 20 times before and after writing; Figure 7 SEM image of the silver nanowire array before writing; Figure 8 SEM image of the silver nanowire array after writing; Figure 9 SEM image of the silver nanowire array after data erasure; Figure 10 Optical micrograph of a silver nanowire array with a width of 5~10 μm prepared for this invention; Figure 11 This is a schematic diagram of a silver nanowire array with a width of 5~8μm for current-voltage curve testing provided by the present invention. Figure 11 In the image, (a) shows a silver nanowire array with a width of 5 μm, (b) shows a silver nanowire array with a width of 6 μm, (c) shows a silver nanowire array with a width of 7 μm, and (d) shows a silver nanowire array with a width of 8 μm. Detailed Implementation
[0017] It is worth noting that while the present invention can prepare silver nanowire arrays with a width of 3-20 μm, in order to improve read / write speed and storage efficiency in data storage, only silver nanowire arrays with a width of 5-8 μm are selected in the following specific embodiments.
[0018] Specific implementation method one: as follows Figure 1 As shown, the steps of the method for fabricating a self-assembled silver nanowire array for read-only storage described in this embodiment include: S1: Prepare a 0.05 mg / mL silver nanowire solution using anhydrous ethanol as the solvent, and sonicate it in an ultrasonic machine for 10 minutes to disperse it uniformly. The length of the silver nanowires is 1~20 μm and the diameter is about 30 nm. S2: Assemble the silver nanowire array fabrication device, such as... Figure 2 As shown; S3: Clean the glass substrate in the apparatus with anhydrous ethanol and dry it with compressed air. Place the substrate and baffle on a 60°C heating table and preheat for 1 minute. S4: Use a pipette to add an appropriate amount of silver nanowire solution to the junction of the substrate and the baffle. Due to capillary action, the solution will gather at the junction and form an elliptical droplet. S5: Let stand for about 5 to 10 minutes to allow the ethanol to evaporate completely. During this process, due to the stick-slip motion between the droplet edge and the substrate, multiple elliptical rings are formed on the substrate surface, with the middle part of the ellipse resembling a straight line array. S6: Observe the morphology of the silver nanowire array using an optical microscope and a scanning electron microscope, such as... Figure 3 and Figure 4 As shown, the width of the silver nanowire array is 3~5μm and the spacing is 10~60μm.
[0019] To verify the advantages of the silver nanowire array prepared in this embodiment for data storage, the following tests were conducted: The prepared silver nanowire array was subjected to current-voltage curve testing. The selected silver nanowire array is shown in the figure below. Figure 11 As shown in (a), the width is approximately 5 μm and the length is approximately 100 μm. Figure 5 This is the current-voltage curve of the silver nanowire array in this embodiment. The test voltage is 0~10V, the writing voltage is about 9V, and the writing current is about 4.5μA. Figure 6 This diagram shows the resistance change during 20 read cycles before and after data writing in this embodiment. The silver nanowire array before writing underwent 20 cycles of 0-1V cycling, and the resistance was approximately 2.5 × 10⁻⁶. 9The resistance is Ω and stable. A current limit of 4.5μA is set to prevent melting, and a voltage of 0~10V is applied to write the data "1". The silver nanowire array after writing is subjected to 20 cycles of 0~1V, and the resistance is approximately 2.5×10⁻⁶. 5 Ω and stable. The resistance ratio before and after writing is approximately 1×10. 4 A voltage of 0-10V was applied to erase the written data "1". Non-in-situ SEM images of the silver nanowire array before and after data writing and after data erasure were performed to observe the morphology of the silver nanowire array at each stage. The SEM images of the silver nanowire array before and after data writing and after data erasure are shown below. Figure 7 , Figure 8 and Figure 9 As shown, compared to before writing, partial fusion occurred between the silver nanowires after writing. After data erasure, the silver nanowire array showed obvious fusion breakage.
[0020] Specific implementation method two: such as Figure 1 As shown, the steps of the method for fabricating a self-assembled silver nanowire array for read-only storage described in this embodiment include: S1: Prepare a 0.1 mg / mL silver nanowire solution using anhydrous ethanol as the solvent, and sonicate it in an ultrasonic machine for 10 minutes to disperse it uniformly. The length of the silver nanowires is 1~20 μm and the diameter is about 30 nm. S2: Assemble the silver nanowire array fabrication device, such as... Figure 2 As shown; S3: Clean the glass substrate in the apparatus with anhydrous ethanol and dry it with compressed air. Place the substrate and baffle on a 60°C heating table and preheat for 1 minute. S4: Use a pipette to add an appropriate amount of silver nanowire solution to the junction of the substrate and the baffle. Due to capillary action, the solution will gather at the junction and form an elliptical droplet. S5: Let stand for about 5 to 10 minutes to allow the ethanol to evaporate completely. During this process, due to the stick-slip motion between the droplet edge and the substrate, multiple elliptical rings are formed on the substrate surface, with the middle part of the ellipse resembling a straight line array. S6: Observe the morphology of the silver nanowire array using an optical microscope and a scanning electron microscope, such as... Figure 10 As shown, the width of the silver nanowire array is 5~10μm and the spacing is 10~60μm.
[0021] To verify the advantages of the silver nanowire array prepared in this embodiment for data storage, the following tests were conducted: Current-voltage curves were measured on the prepared silver nanowire array. The selected silver nanowire array is shown below. Figure 11As shown in (b), the width is approximately 6 μm and the length is approximately 100 μm. The test voltage is 0~10V, the write voltage is approximately 7.2V, and the write current is approximately 0.6mA. The current-voltage curves of the silver nanowire array in this embodiment are... Figure 5 Similarly, in this implementation, the resistance change during 20 reads before and after data writing is similar to... Figure 6 Similarly, the resistance of the silver nanowire array before writing was approximately 3.6 × 10⁻⁶ after 20 cycles of 0–1 V. 8 The resistance is Ω and stable. A current limit of 0.6mA is set to prevent meltdown, and a voltage of 0-10V is applied to write the data "1". The silver nanowire array after writing is subjected to 20 cycles of 0-1V cycling, and the resistance is approximately 1×10⁻⁶. 4 Ω and stable. The resistance ratio before and after writing is approximately 3.6 × 10⁻⁶. 4 Apply a voltage of 0-10V to erase the written data "1". Perform in-situ SEM images of the silver nanowire array before and after data writing and after data erasure to observe the morphology of the silver nanowire array at each stage. The SEM images of the silver nanowire array before and after data writing and after data erasure in this embodiment are shown below. Figure 7-9 Similarly, after writing, partial fusion occurred between the silver nanowires compared to before writing. After data erasure, the silver nanowire array showed significant fusion breakage.
[0022] Specific implementation method three: such as Figure 1 As shown, the steps of the method for fabricating a self-assembled silver nanowire array for read-only storage described in this embodiment include: S1: Prepare a 0.1 mg / mL silver nanowire solution using anhydrous ethanol as the solvent, and sonicate it in an ultrasonic machine for 10 minutes to disperse it uniformly. The length of the silver nanowires is 1~20 μm and the diameter is about 30 nm. S2: Assemble the silver nanowire array fabrication device, such as... Figure 2 As shown; S3: Clean the glass substrate in the apparatus with anhydrous ethanol and dry it with compressed air. Place the substrate and baffle on a 60°C heating table and preheat for 1 minute. S4: Use a pipette to add an appropriate amount of silver nanowire solution to the junction of the substrate and the baffle. Due to capillary action, the solution will gather at the junction and form an elliptical droplet. S5: Let stand for about 5 to 10 minutes to allow the ethanol to evaporate completely. During this process, due to the stick-slip motion between the droplet edge and the substrate, multiple elliptical rings are formed on the substrate surface, with the middle part of the ellipse resembling a straight line array. S6: Observe the morphology of the silver nanowire array using an optical microscope and a scanning electron microscope, such as... Figure 8 As shown, the width of the silver nanowire array is 5~10μm and the spacing is 10~60μm.
[0023] To verify the advantages of the silver nanowire array prepared in this embodiment for data storage, the following tests were conducted: Current-voltage curves were measured on the prepared silver nanowire array. The selected silver nanowire array is shown below. Figure 11 As shown in (c), the width is approximately 7 μm and the length is approximately 100 μm. The test voltage is 0~10V, the write voltage is approximately 7V, and the write current is approximately 9mA. In this embodiment, the current-voltage curve of the silver nanowire array is similar to... Figure 5 Similarly, in this implementation, the resistance change during 20 reads before and after data writing is similar to... Figure 6 Similarly, the resistance of the silver nanowire array before writing was approximately 2.5 × 10⁻⁶ after 20 cycles of 0–1 V. 8 The resistance is Ω and stable. A current limit of 9mA is set to prevent meltdown, and a voltage of 0-10V is applied to write the data "1". The silver nanowire array after writing is subjected to 20 cycles of 0-1V cycling, and the resistance is approximately 9.6 × 10⁻⁶. 3 Ω and stable. The resistance ratio before and after writing is approximately 2.6 × 10⁻⁶. 4 A voltage of 0-10V is applied to erase the written data "1". Non-in-situ SEM images of the silver nanowire array before and after data writing and after data erasure are performed to observe the morphology of the silver nanowire array at each stage. The SEM images of the silver nanowire array before and after data writing and after data erasure in this embodiment are shown below. Figures 7-9 Similarly, after writing, partial fusion occurred between the silver nanowires compared to before writing. After data erasure, the silver nanowire array showed significant fusion breakage.
[0024] Specific implementation method four: such as Figure 1 As shown, the steps of the method for fabricating a self-assembled silver nanowire array for read-only storage described in this embodiment include: S1: Prepare a 0.1 mg / mL silver nanowire solution using anhydrous ethanol as the solvent, and sonicate it in an ultrasonic machine for 10 minutes to disperse it uniformly. The length of the silver nanowires is 1~20 μm and the diameter is about 30 nm. S2: Assemble the silver nanowire array fabrication device, such as... Figure 2 As shown; S3: Clean the glass substrate in the apparatus with anhydrous ethanol and dry it with compressed air. Place the substrate and baffle on a 60°C heating table and preheat for 1 minute. S4: Use a pipette to add an appropriate amount of silver nanowire solution to the junction of the substrate and the baffle. Due to capillary action, the solution will gather at the junction and form an elliptical droplet. S5: Let stand for about 5 to 10 minutes to allow the ethanol to evaporate completely. During this process, due to the stick-slip motion between the droplet edge and the substrate, multiple elliptical rings are formed on the substrate surface, with the middle part of the ellipse resembling a straight line array. S6: Observe the morphology of the silver nanowire array using an optical microscope and a scanning electron microscope, such as... Figure 8 As shown, the width of the silver nanowire array is 5~10μm and the spacing is 10~60μm.
[0025] To verify the advantages of the silver nanowire array prepared in this embodiment for data storage, the following tests were conducted: Current-voltage curves were measured on the prepared silver nanowire array. The selected silver nanowire array is shown below. Figure 11 As shown in (d), the width is approximately 8 μm and the length is approximately 100 μm. The test voltage is 0~10V, the write voltage is approximately 6V, and the write current is approximately 8.8mA. In this embodiment, the current-voltage curve of the silver nanowire array is similar to... Figure 5 Similarly, in this implementation, the resistance change during 20 reads before and after data writing is similar to... Figure 6 Similarly, the resistance of the silver nanowire array before writing was approximately 2.2 × 10⁻⁶ after 20 cycles of 0–1 V. 8 The resistance is Ω and stable. A current limit of 8.8mA is set to prevent meltdown, and a voltage of 0-10V is applied to write the data "1". The silver nanowire array after writing is subjected to 20 cycles of 0-1V cycling, and the resistance is approximately 7.5 × 10⁻⁶. 3 Ω and stable. The resistance ratio before and after writing is approximately 2.9 × 10⁻⁶. 4 A voltage of 0-10V is applied to erase the written data "1". Non-in-situ SEM images of the silver nanowire array before and after data writing and after data erasure are performed to observe the morphology of the silver nanowire array at each stage. The SEM images of the silver nanowire array before and after data writing and after data erasure in this embodiment are shown below. Figures 7-9 Similarly, after writing, partial fusion occurred between the silver nanowires compared to before writing. After data erasure, the silver nanowire array showed significant fusion breakage.
[0026] In summary, the only difference between embodiments one to four lies in the width of the silver nanowire arrays selected for testing. However, according to the test results of each embodiment, silver nanowire arrays with a width of 5–8 μm as defined in this invention can all achieve data storage through welding. The high resistance of the silver nanowire array results in low power consumption for writing and reading data, and all embodiments achieve the following technical effects: In terms of silver nanowire array fabrication: This invention requires no complex equipment or harsh experimental conditions during the fabrication process. A simple fabrication device is used to induce a multi-ring coffee ring effect in the silver nanowire solution, resulting in a uniformly distributed and highly regular silver nanowire array. Furthermore, this invention offers fast fabrication speed, low cost, and a simple method, overcoming the problem of existing technologies struggling to precisely control the arrangement and structure of silver nanowires, thus affecting the overall performance of the device. In terms of silver nanowire array application for data storage: This invention innovatively achieves data storage through welding between silver nanowires, filling a technological gap. The prepared silver nanowire array can be welded together simply by applying voltage, thereby reducing resistance and achieving data storage without the need for special materials or structures. Furthermore, due to the high resistance of the silver nanowire array, the power consumption required for writing and reading data is low.
[0027] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some modifications or alterations to the above-disclosed technical content to create equivalent embodiments without departing from the scope of the present invention. Any simple modifications, equivalent substitutions, and improvements made to the above embodiments without departing from the scope of the present invention, based on the technical essence of the present invention and within the spirit and principles of the present invention, shall still fall within the protection scope of the present invention.
Claims
1. A method for fabricating a self-assembled silver nanowire array for read-only storage, characterized in that, The steps of the method for fabricating the self-assembled silver nanowire array for read-only storage include: Step 1: Prepare a silver nanowire solution using anhydrous ethanol as the solvent, and then place the prepared silver nanowire solution into an ultrasonic machine for ultrasonication. Step 2: Assemble the silver nanowire array fabrication device, which consists of a substrate and a baffle. The substrate is ordinary glass, and the baffle is vertically set at the center of the substrate with its bottom in contact with the substrate. The baffle is used to change the shape of the droplets. Step 3: Clean the glass substrate with anhydrous ethanol and dry it with compressed air. Place the dried substrate and baffle on the heating table for preheating. Step 4: Use a pipette to draw an appropriate amount of the sonicated silver nanowire solution and drop it onto the interface between the substrate and the baffle. Through capillary action, the silver nanowire solution gathers at the interface and forms an elliptical droplet. Step 5: After standing for 5-10 minutes, the anhydrous ethanol will completely evaporate. During the standing process, the contact line between the edge of the elliptical droplet and the substrate will undergo stick-slip motion, forming multiple elliptical rings on the substrate surface. The linear array formed in the middle of the elliptical rings is the silver nanowire array. Step 6: Observe the morphology of the silver nanowire array using an optical microscope and a scanning electron microscope.
2. The method for fabricating a self-assembled silver nanowire array for read-only storage according to claim 1, characterized in that, In step 1, the mass concentration of the silver nanowire solution is 0.05~0.1 mg / mL, the concentration of anhydrous ethanol is ≥99.7%, the ultrasonic time is 10 minutes, the ultrasonic frequency is 40 kHz, and the length of the silver nanowires in the solution is 1~20 μm, and the diameter is about 30 nm.
3. The method for fabricating a self-assembled silver nanowire array for read-only storage according to claim 1, characterized in that, In step 3, the preheating temperature is 60℃ and the preheating time is 1 minute.
4. The method for fabricating a self-assembled silver nanowire array for read-only storage according to claim 1, characterized in that, The silver nanowire array observed in step 6 has a width of 3–20 μm and a spacing of 10–60 μm.
5. The application of a self-assembled silver nanowire array for read-only storage, applied to the preparation method of the self-assembled silver nanowire array for read-only storage as described in any one of claims 1-4, characterized in that, include: Silver nanowire arrays with a width of 5–8 μm and a length of 100 μm were selected and subjected to current-voltage curve testing. During the test, the applied voltage was changed to write data "0" and data "1" and to erase the written data "1" by overheating and melting the silver nanowire array.
6. The application of the self-assembled silver nanowire array for read-only storage according to claim 5, characterized in that, The test voltage in the current-voltage curve test is 0-10V. The current-voltage curve test specifically includes: When a voltage less than a preset value is applied, the resistance of the silver nanowire array is greater than 10. 8 ~10 9 Ω, this state is recorded as data "0", and the silver nanowire array in this state is subjected to 20 0-1V cycle tests to ensure the stability of reading data "0" state; By increasing the voltage and setting an upper limit on the current, the silver nanowire array is prevented from melting. When the voltage increases to a preset value, the resistance of the silver nanowire array drops to 10. 4 ~10 5 The resistor Ω is used to write the data "1". The writing voltage is approximately 6-9V, the writing current is approximately 5μA-1mA, and the writing power is approximately 64μW-6mA. The resistance ratio before and after writing is greater than 10. 3 The silver nanowire array after writing was subjected to 20 cycles of 0-1V to ensure the stability of reading the data "1" state. Continue increasing the voltage until the silver nanowire array overheats and melts, erasing the written data "1". Apply a voltage of 0-1V to verify whether the data has been erased. If it has not been erased, continue increasing the voltage until the written data "1" is erased.
7. The application of the self-assembled silver nanowire array for read-only storage according to claim 5, characterized in that, After the current-voltage curve test was completed, the silver nanowire array was subjected to in-situ SEM imaging before and after data writing and after data erasure to observe the morphology of the silver nanowire array at each stage. Among them, compared with before writing, the silver nanowires after writing were partially fused together, and after data erasure, the silver nanowire array was fused apart.