Semiconductor processing apparatus, pressure control method, and opening valve

Abstract

The application discloses a semiconductor processing device, a pressure control method and an opening degree valve. The semiconductor processing device divides a process cavity into a first cavity (a substrate processing area) and a second cavity (a pre-evacuation area) through a cross section control part, and the cross section control part can adjust the size of a flow cross section between the two cavities. The pressure control method is as follows: a vacuum pump continuously evacuates the second cavity; when the pressure is increased, the flow cross section is reduced (and is kept greater than zero), so that low-pressure process gas of a previous stage is smoothly discharged, and meanwhile, the first cavity is increased in pressure, and the second cavity forms a low-pressure area; when the pressure is decreased, the flow cross section is increased, and the pressure decrease of the first cavity is realized by utilizing the pressure difference between the two cavities. The opening degree valve adopts a structure in which a baffle and a coaxial rotating shielding piece are matched, and only directional rotation is needed to realize the switching of the opening degree. The scheme improves the pressure switching speed and is suitable for semiconductor processes which need frequent and rapid pressure adjustment.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to semiconductor processing apparatus, pressure control methods and opening valves. Background Technology

[0002] Currently, vacuum valves, as the main components for pressure control in semiconductor process cavities, suffer from issues such as the inertia of their valve plates and the response delay and long stabilization period of their proportional-integral-derivative (PID) self-feedback pressure control. These problems make them unsuitable for frequent and rapid pressure regulation, and consequently, unsuitable for processes requiring rapid pressure switching, such as atomic layer etching (ALE) or Bosch processes. Therefore, there is an urgent need to provide a new solution to improve pressure switching speed.

[0003] Prior patent CN122054948A discloses a system and method for rapidly adjusting process chamber pressure based on a small array of valves and pumps. This method uses an array of small valves and pumps at the exhaust port to accelerate steady-state adjustment of the chamber pressure and achieve finer control to improve substrate uniformity. However, due to the large internal volume of the chamber and the volumetric pumping speed, the large internal volume limits the improvement of the pressure switching speed.

[0004] To address the slow pressure switching speed caused by the large internal volume of the process chamber, one approach is to reduce the effective volume by filling the process chamber with inert material, or to directly design a small-volume process chamber, hoping to improve the situation. However, on the one hand, due to limitations in base installation and movement, the volume beneath the substrate always exists and cannot be completely eliminated, limiting the extent to which the effective volume can be reduced; on the other hand, reducing the overall process chamber volume can easily lead to a decrease in gas conductance and obstruction of the exhaust path, thus hindering rapid gas exchange and pressure switching. Therefore, existing technologies still face insurmountable technical bottlenecks in improving pressure switching speed. Summary of the Invention

[0005] Based on this, the purpose of the present invention is to provide a semiconductor processing device, a pressure control method and an opening valve, which breaks through the limitations of the process chamber volume in the prior art by using a pressure control scheme of "zoned pressure control + differential pressure energy storage" to significantly improve the pressure switching speed, and is particularly suitable for semiconductor processes that require frequent and rapid pressure adjustment.

[0006] According to one aspect of the present invention, a semiconductor processing apparatus is provided, comprising a process cavity, wherein a base is disposed within the process cavity to support a substrate; and further comprising:

[0007] A cross-section control unit is located between the base and the sidewall of the process cavity. The cross-section control unit divides the process cavity into a first cavity located upstream of the cross-section control unit and a second cavity located downstream of the cross-section control unit. The cross-section control unit controls the size of the flow cross-section between the first cavity and the second cavity. The substrate is located in the first cavity.

[0008] An exhaust port is located in the second cavity and is connected to a vacuum pump to create a vacuum.

[0009] An air inlet, located in the first cavity, is used to supply process gas;

[0010] The control unit is used to control the section control unit and is configured as follows:

[0011] The vacuum pump continuously evacuates the second cavity.

[0012] When pressurizing the first cavity, the flow cross-section is reduced to be greater than zero, so that the pressure in the second cavity is less than the pressure in the first cavity.

[0013] When performing a pressure reduction operation on the first cavity, the flow cross section is increased to make the pressure in the first cavity and the second cavity converge.

[0014] According to another aspect of the present invention, a pressure control method is provided, comprising:

[0015] The aforementioned semiconductor processing device is provided, and the second cavity is continuously evacuated.

[0016] A first process gas is supplied to the first cavity, and the cavity is operated in a first process based on a first pressure.

[0017] A second process gas is supplied to the first cavity, and the cavity is operated in a second process based on a second pressure.

[0018] The first pressure is greater than the second pressure, and the first process and the second process alternate in a cycle, wherein,

[0019] When the pressure in the first cavity increases from the second pressure to the first pressure...

[0020] The flow cross-section between the first cavity and the second cavity is reduced to be greater than zero, thereby reducing the pressure in the second cavity to a third pressure, which is less than the second pressure.

[0021] When the pressure in the first cavity decreases from the first pressure to the second pressure

[0022] Increase the flow cross section so that the pressure in the first cavity and the second cavity is similar to the second pressure.

[0023] According to another aspect of the present invention, an opening valve is provided, suitable for use in the aforementioned semiconductor processing apparatus, for constituting the cross-section control unit, comprising:

[0024] The baffle has alternating first blocking portions and first hollow portions arranged radially in a circumferential direction.

[0025] The movable part has a movable blocking member and a driving part. The blocking member is coaxially spaced from the baffle. The blocking member includes a second blocking part and a second hollow part that are circumferentially alternately arranged and correspond to the radial position of the first hollow part. The driving part drives the blocking member to rotate around the axis so that the opening valve repeatedly switches between a first opening degree and a second opening degree.

[0026] This invention divides the traditional single process chamber into two functionally independent chambers: the first chamber serves as the substrate processing area, and the second chamber serves as a pre-vacuum energy storage area, continuously evacuated by a vacuum pump. By setting an adjustable flow cross-section control section between the two chambers, the flow cross-section is reduced (but kept greater than zero) during pressurization, allowing the low-pressure process gas from the previous process stage to be smoothly discharged. At the same time, the first chamber forms a relatively independent space, achieving rapid pressurization; simultaneously, the second chamber forms a low-pressure energy storage area under continuous vacuum pump suction, and the flow cross-section is increased during depressurization, utilizing the pressure difference between the two chambers to achieve rapid depressurization of the first chamber. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the opening adjustment of a vacuum valve in the prior art.

[0028] Figure 2 This is a schematic diagram of a semiconductor processing apparatus according to an embodiment.

[0029] Figure 3 This is a schematic diagram of a baffle and a blocking member according to one embodiment.

[0030] Figure 4 for Figure 3 Enlarged view of the middle valve body.

[0031] Figure 5 for Figure 4 An enlarged view of the second flip panel.

[0032] Figure 6 This is a schematic diagram of a baffle according to another embodiment.

[0033] Figure 7 for Figure 6 Enlarged view of the moving parts.

[0034] Figure 8 This is a top view of a baffle and a rotating blocking member according to one embodiment.

[0035] Figure 9 This is a schematic diagram of a baffle and a lifting movable component according to another embodiment.

[0036] Figure 10 This is a schematic diagram of a baffle and a telescopic ring according to another embodiment.

[0037] Figure 11 This is a schematic diagram of the pressure change phases within a cycle.

[0038] Figure 12 for Figure 11 A schematic diagram showing the positional relationship between the second blocking part and the first hollowed-out part in the inner T1 stage.

[0039] Figure 13 for Figure 11 A schematic diagram showing the positional relationship between the second blocking part and the first hollowed-out part in the inner T2 stage.

[0040] Figure 14 for Figure 11 A schematic diagram showing the positional relationship between the second blocking part and the first hollowed-out part in the inner T3 stage.

[0041] Figure 15 for Figure 11 A schematic diagram showing the positional relationship between the second blocking part and the first hollowed-out part in the inner T4 stage.

[0042] Figure 16 A schematic diagram showing the relationship between the position of the lifting and lowering shield and the pressure change stages within the cycle.

[0043] Figure 17 This is a schematic diagram showing the circulation cycle corresponding to the flow cross section and pressure.

[0044] Figure 18 This is a schematic diagram of the drive unit structure in one embodiment.

[0045] Figure 19 This is a schematic diagram of the first flap structure in one embodiment.

[0046] Figure 20 This is a schematic diagram of the translational plate structure in one embodiment.

[0047] Explanation of icon numbers:

[0048] 10-Semiconductor processing device; 20-Substrate; 30-Section control unit; 31-First flip plate; 32-Pivot; 33-Translation plate;

[0049] 100 - Process chamber; 101 - Outer wall; 110 - Air inlet; 110a - Exhaust port; 110b - First air supply port; 110c - Second air supply port; 120 - Vacuum valve; 130 - Vacuum pump; 140 - Base; 150 - First chamber; 160 - Second chamber;

[0050] 200 - baffle; 210 - first blocking part; 220 - first hollow part; 221 - opening;

[0051] 300 - Moving part; 310 - Covering part; 310a - Second hollow part; 310b - Second blocking part; 311 - Second flap; 312 - Valve body; 313 - Telescopic ring; 320 - Drive part; 321 - Inner magnetic ring; 322 - Outer magnetic ring; 323 - Drive motor;

[0052] 400 - Control Unit;

[0053] 500 - Gas source section; 510 - First valve; 520 - Second valve; 530 - Pressure gauge. Detailed Implementation

[0054] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0055] As a key component for pressure control in semiconductor process chambers, the vacuum valve suffers from issues related to its own valve plate inertia and the response delay and long stabilization period of its PID self-feedback pressure control mode. Even when set to open position mode, its large inertia and self-protection limitations result in problems such as... Figure 1 The slow convergence of the vacuum pump cannot meet the requirements of frequent and rapid pressure regulation. Furthermore, the pumping speed of a vacuum pump is generally a volumetric pumping speed; even with rapid switching of the vacuum valve opening, the pressure switching speed remains limited due to the vacuum pump's suction capacity and the large volume of the process chamber 100. This makes it difficult to adapt to some processes requiring faster pressure switching, such as atomic layer etching or Bosch processes. Therefore, a new solution is urgently needed to improve the pressure switching speed.

[0056] See Figure 2 , Figure 2A schematic diagram of the structure of a semiconductor processing apparatus 10 according to an embodiment of this application is shown. The semiconductor processing apparatus 10 provided in an embodiment of this application includes a process cavity 100, and a base 140 is provided in the process cavity 100 to support a substrate 20. The semiconductor processing apparatus 10 also includes a cross-section control unit 30, an exhaust port 110a, an air inlet 110, and a control unit 400.

[0057] The cross-section control unit 30 is arranged between the base 140 and the side wall of the process cavity 100, dividing the overall process cavity 100 into a first cavity 150 on the upstream side and a second cavity 160 on the downstream side. The substrate 20 is placed inside the first cavity 150 on the upstream side. The cross-section control unit 30 can adjust the cross-sectional area of ​​gas flow between the two cavities, and the flow cross-section is always greater than zero in all working states.

[0058] This solution does not require changing the total volume of the process chamber 100, especially maintaining a sufficient volume of the second chamber 160 to ensure exhaust flow and negative pressure volume, thus avoiding exhaust obstruction caused by reducing the internal volume of the chamber.

[0059] The second cavity 160 is provided with an exhaust port 110a, which is used to connect to a vacuum pump 130 to evacuate the process cavity 100.

[0060] The first chamber 150 is provided with an air inlet 110 to supply process gases during the process. For example, the process gases include a first process gas operating at high pressure and a second process gas operating at low pressure. In some process requirements, the first process gas and the second process gas are process gases for different processes. Ideally, during the process, the two process gases should not coexist within the first chamber 150, i.e., the substrate 20 should not be treated by both process gases during the processing.

[0061] The control unit 400 controls the cross-section control unit 30 to change the size of the flow cross-section between the first cavity 150 and the second cavity 160. It is configured to: continuously evacuate the second cavity 160 using the vacuum pump 130; decrease the flow cross-section when performing a pressure boosting operation on the first cavity 150, so that the pressure in the second cavity 160 is lower than the pressure in the first cavity 150; and increase the flow cross-section when performing a pressure depressurization operation on the first cavity 150, so that the pressures in the first cavity 150 and the second cavity 160 converge, thereby achieving rapid pressure rise and fall switching in the first cavity 150, i.e., the substrate processing area.

[0062] It is understandable that reducing the flow cross-section between the first cavity 150 and the second cavity 160, while ensuring the flow cross-section remains greater than zero (meaning there is still flow continuity between the first cavity 150 and the second cavity 160, rather than complete isolation), allows the low-pressure second process gas in the first cavity 150 to be discharged smoothly, preventing the mixing of high and low-pressure process gases within the first cavity. Simultaneously, this increases the exhaust resistance of the first cavity 150, causing the pressure in the first cavity 150 to rise rapidly under continuous supply of high-pressure first process gas. Meanwhile, under continuous suction from the vacuum pump 130, the pressure in the second cavity 160 further decreases to a third pressure due to the reduced inflow of gas. This third pressure is lower than the second pressure, creating a pressure difference with the first cavity.

[0063] When the pressure reduction operation is performed on the first cavity 150, the control section control unit 30 increases the flow section between the first cavity 150 and the second cavity 160, so that the pressure balance between the first cavity 150 and the second cavity 160 is quickly established, the pressure of the first cavity 150 is rapidly reduced, and the second pressure is quickly reached under the continuous suction of the vacuum pump 130, thereby realizing the rapid pressure switching of the reaction area where the substrate 20 is located.

[0064] In one embodiment, when the pressure in the first chamber 150 is reduced, the flow cross section between the first chamber 150 and the second chamber 160 tends to be maximized to accelerate the pressure balance.

[0065] It is understood that any configuration located between the base 140 and the sidewall of the process cavity 100 and capable of altering its flow cross-section can be configured as the cross-section control unit 30 in the embodiment.

[0066] As an example, the main body of the section control section 30 adopts a flap structure, such as... Figure 19 As shown, the first flap 31 is equipped with a pivot 32 structure. The first flap 31 can rotate around the pivot 32. By changing the rotation angle of the first flap 31, the angle between the first flap 31 and the gas flow direction F is changed, thereby changing the effective flow area between the first cavity 150 and the second cavity 160. The control unit only needs to adjust the rotation angle to complete the switching between pressurization and depressurization.

[0067] As an example, the section control unit 30 includes a translational plate 33, such as Figure 20 As shown, the translational plate 33 can extend and retract along the flow cross-section direction to change the size of the flow cross-section. The translational plate 33 is positioned perpendicular to the gas flow direction F and is driven by a drive mechanism to perform radial extension and retraction along the flow cross-section direction, changing the area of ​​the translational plate obstructing the annular channel between the base 140 and the sidewall of the process chamber 100, thereby adjusting the size of the flow cross-section. For example, the translational plate 33 can be based on a structure such as an aperture scaling mechanism to achieve radial extension and retraction.

[0068] As an example, the cross-section control unit 30 is composed of a fixed baffle 200 and a movable part 300. The baffle 200 is fixedly installed on the outer wall of the base 140 and / or the side wall of the process cavity 100. The surface of the baffle 200 is provided with a first blocking part 210 and a first hollow part 220. The first hollow part 220 serves as a gas flow channel, connecting the upstream first cavity 150 and the downstream second cavity 160. The movable part 300 has a movable blocking member 310, which corresponds to the position of the first hollow part 220. By adjusting the movement posture of the blocking member 310, the actual flow cross-section size of the first hollow part 220 is adjusted, thereby achieving precise control of the flow cross-section. It can be understood that in one embodiment, if the blocking member 310 blocks the first hollow part 220, the flow cross-section is reduced; if the blocking member 310 opens the first hollow part 220, the flow cross-section is increased. By setting the size and positional relationship between the first hollow part 220 and the blocking part 310, the size of the flow section can be precisely and quickly controlled.

[0069] Compared to directly setting the first flap 31 or the translation plate 33, the design of the baffle 200 and the first hollow part 220 can precisely control the size of the maximum flow cross section, thereby matching the maximum flow conductance required for pressure control. Furthermore, the baffle 200 can serve as a fixed base for installing various valve plates, achieving rapid and precise control of the flow cross section.

[0070] In one embodiment, a vacuum valve 120 is provided at the exhaust port 110a to control the flow cross-section between the vacuum pump 130 and the exhaust port 110a via a control unit 400. The control unit 400 is used to control the vacuum pump 130's evacuation. In most cases of this embodiment, the vacuum valve 120 remains open at a fixed degree during the process without adjustment, to avoid the impact of the lag in the vacuum valve 120's opening switching on the process rate. Of course, the possibility of the vacuum valve 120 and the moving part 300 switching their openings together is not excluded.

[0071] In one embodiment, the ratio of the cross-sectional area of ​​the first perforated portion 220 to the cross-sectional area of ​​the baffle 200 is greater than 70%. That is, when the first perforated portion 220 is fully opened, the area through which gas can pass through the first perforated portion 220 accounts for at least 70% of the area of ​​the baffle 200, avoiding the generation of additional flow resistance and improving the ability to switch pressures.

[0072] In one embodiment, the volume of the second chamber 160 is not less than half the volume of the first chamber 150, so that the vacuum space of the second chamber 160 is relatively sufficient for the first chamber 150. During the process of switching the first chamber 150 from high pressure to low pressure, the pressure drop rate of the first chamber 150 will not be too slow due to the small volume of the second chamber 160, and the exhaust flow conduction will be improved to avoid exhaust obstruction and improve the pressure switching speed.

[0073] See Figure 3 and Figure 6 In one embodiment, the first cutout portion 220 includes a plurality of openings 221, which are thin-walled holes to minimize the loss along the process.

[0074] See Figure 3 and Figure 6 In one embodiment, the second cutout 310a is configured as a thin-walled hole so that its loss along the path approaches zero.

[0075] Both the first perforated portion 220 and the second perforated portion 310a are thin-walled holes, which can reduce the influence of thickness on the flow cross section adjustment process, thereby making the flow loss along the gas pressure change process approach zero.

[0076] See Figure 4 , Figure 5 as well as Figure 7 In one embodiment, the blocking element 310 includes a butterfly valve, swing valve or linear motion valve located in the opening 221. By switching the various valve bodies 312, the opening 221 is repeatedly opened or closed, thereby periodically changing the flow cross section. The blocking element 310 can also be other valves, as long as they can repeatedly open or close the opening 221. The form of the valve is not limited here.

[0077] See Figure 5 and Figure 7 In another embodiment, the shielding member 310 includes a second flap 311 located within the first openwork portion 220. The pivot of the second flap 311 is rotatably connected to the inner wall of the first openwork portion 220 to selectively shield the first openwork portion 220, thereby allowing the flow cross-section of the first openwork portion 220 to be changed by rotating the second flap 311. The second flap 311 can be a rotating plate capable of covering the opening 221 of the first openwork portion 220, such as... Figure 7 It can also be multiple rotating louvers, such as Figure 5 The specific form of the second flap 311 is not limited here, as long as it satisfies that the flow cross section of the opening 221 can be changed by changing the rotation angle of the second flap 311 relative to the axis of the blocking member 310.

[0078] See Figure 3 , Figure 6 as well as Figure 8In one embodiment, the first perforated portion 220 includes multiple openings 221, which are spaced apart circumferentially along the baffle 200. A blocking member 310 is coaxially spaced with the baffle 200. The blocking member 310 includes alternating second blocking portions 310b and second perforated portions 310a arranged circumferentially. The blocking member 310 can rotate directionally around an axis to repeatedly block and open the openings 221. The blocking member 310 only needs to rotate directionally to achieve rapid switching of the flow cross-sectional size, without repeatedly changing the direction of movement, avoiding inertial impact during reversal. It achieves rapid flow field switching without overshoot protection, and the speed of flow cross-sectional size switching can be adjusted to match the pressure switching cycle.

[0079] See Figure 3 , Figure 5 as well as Figure 7 In one embodiment, the opening 221 is rotationally symmetrical with respect to the axis of the baffle 200, and the second blocking part 310b is correspondingly provided with respect to the opening 221.

[0080] In this embodiment, multiple openings 221 are evenly spaced along the circumference of the baffle 200. The blocking member 310 rotates around its axis. The spaced-apart second hollow portions 310a can open the corresponding openings 221, and the second blocking portions 310b can block the corresponding openings 221. When the second hollow portion 310a corresponds to the opening 221, the second blocking portion 310b corresponds to the first blocking portion 210, and the flow cross section is at its maximum. When the second blocking portion 310b corresponds to the opening 221, the second hollow portion 310a corresponds to the first blocking portion 210, and the flow cross section is at its minimum. Thus, the openings 221 can be periodically opened and blocked by the rotation of the blocking member 310.

[0081] See Figure 8 and Figure 12 In one embodiment, in the rotational direction, the circumferential wrap angle of the second blocking portion 310b is smaller than the circumferential wrap angle of the opening 221 and smaller than the circumferential wrap angle of the first blocking portion 210.

[0082] See Figure 8 The circumferential wrap angle refers to the central angle formed by the two radial edges of a structure on a ring-shaped component along the circumferential direction, with the central axis of the ring component as the vertex. It is used to quantitatively describe the circumferential extension range of the ring structure. In this application, all circumferential wrap angles are measured with the central axis of the baffle 200 as the common vertex.

[0083] In this embodiment, since the circumferential wrap angle of the second blocking part 310b is smaller than the circumferential wrap angle of the opening 221 and smaller than the circumferential wrap angle of the first blocking part 210, the circumferential length of the second hollow part 310a is greater than the length of the opening 221. When the second hollow part 310a begins to correspond with the opening 221, the flow cross section gradually increases. Subsequently, the second hollow part 310a continues to rotate, and the opening 221 is fully opened. During this process, the flow cross section remains unchanged and remains stable until the second blocking part 310b begins to correspond with the opening 221, that is, the opening 221 gradually closes and the flow cross section gradually decreases until the minimum flow cross section, or the next second hollow part 310a continues to open the opening 221. Therefore, the first hollow portion 220 and the first blocking portion 210 need to be arranged at uniform intervals along the circumference, and each first hollow portion 220 has the same angle along its circumference. Similarly, the second hollow portion 310a and the second blocking portion 310b need to be arranged at uniform intervals along the circumference, and each second hollow portion 310a has the same angle along its circumference.

[0084] Specifically, see Figures 11-15 The second blocking part 310b changes the flow cross section of the first hollow part 220 by rotating, and the pressure change stage of the first cavity 150 of the rotating blocking part 310 is achieved.

[0085] In stage t1: the second blocking part 310b completely covers the first hollow part 220, the flow cross section is the smallest, the pressure in the first cavity 150 is the largest, which is the first pressure;

[0086] t2 stage: The second blocking part 310b begins to separate from the first hollow part 220, the flow cross section gradually increases, the pressure in the first cavity 150 decreases, and the pressure switches from the first pressure to the second pressure;

[0087] t3 stage: The second blocking part 310b corresponds completely to the first blocking part 210, the first hollow part 220 is fully open, the flow cross section is the largest, the pressure in the first cavity 150 is the smallest, which is the second pressure;

[0088] t4 stage: The second blocking part 310b starts to block the first hollow part 220 again, the flow cross section gradually decreases, the pressure in the first cavity 150 increases, and the pressure switches from the second pressure to the first pressure.

[0089] See Figure 8 , Figure 9 as well as Figure 10In one embodiment, the blocking member 310 is axially spaced from the baffle 200, and the blocking member 310 is located within the second cavity 160. The blocking member 310 may be a ring, sleeved on the base 140 and located between the base 140 and the side wall of the process cavity 100, and is movable relative to the baffle 200. The blocking member 310 may also be a disc, located within the second cavity 160, and movably disposed with respect to the side wall of the process cavity 100, so as to move relative to the baffle 200.

[0090] See Figure 8 and Figure 9 as well as Figure 16 In one embodiment, the shielding member 310 includes a linear motion plate corresponding to the first hollow portion 220. The linear motion plate is adjustable in its axial clearance with the baffle 200. By adjusting the axial clearance between the shielding member 310 and the baffle 200, the axial clearance between the first hollow portion 220 and the second hollow portion 310a can be adjusted, thereby changing the flow cross section. When the shielding member 310 is in contact with the baffle 200, the second blocking portion 310b completely covers the first hollow portion 220, and the flow cross section is minimized. When the shielding member 310 is away from the baffle 200, the gas can flow through the axial clearance between the shielding member and the baffle, and the flow cross section increases.

[0091] Specifically, see Figure 11 and Figure 16 Pressure change stages of linear motion blocking component 310:

[0092] t1 stage: The shielding part 310 is attached to the baffle 200, the second blocking part 310b completely covers the first hollow part 220, the flow cross section is the smallest, the pressure in the first cavity 150 is the largest, which is the first pressure;

[0093] t2 stage: The shielding component 310 moves away from the baffle 200, the axial clearance increases, the flow cross section gradually increases, the pressure in the first cavity 150 decreases, and the pressure switches from the first pressure to the second pressure;

[0094] t3 stage: The distance between the shielding part 310 and the first hollow part 220 is the maximum distance set, the flow cross section is the largest, the pressure in the first cavity 150 is the smallest, which is the second pressure;

[0095] t4 stage: When the shielding component 310 approaches the baffle 200, the axial clearance decreases, the flow cross section gradually decreases, the pressure in the first cavity 150 increases, and the pressure switches from the second pressure to the first pressure.

[0096] See Figure 9The first perforated portion 220 is an annular through hole opened on the annular baffle 200. The blocking member 310 is also annular and corresponds to the annular through hole. The radial width of the blocking member 310 is less than or equal to the radial width of the annular through hole. By raising and lowering the annular blocking member 310, the first annular perforated portion 220 can be at least partially opened or blocked, thereby changing the flow cross section. When the blocking member 310 is in contact with the baffle 200, the second blocking portion 310b at least partially blocks the first perforated portion 220, minimizing its flow cross section. When the blocking member 310 is away from the baffle 200, gas can flow through the axial gap between the blocking member and the baffle, increasing the flow cross section.

[0097] Specifically, a rotating ring or annular gear can be provided on the inner wall of the process cavity 100, and the blocking member 310 is a ring or a disk that cooperates with the rotating ring or annular gear on the inner wall of the process cavity 100 to realize the rotation of the blocking member 310. The annular gear or rotating ring can also be provided on the side wall of the base 140 and cooperate with the inner ring of the blocking member 310.

[0098] Specifically, a magnetic control ring or magnetic control device can be provided on the inner wall of the process cavity 100 to control the rotation of the shielding member 310. In this embodiment, the shielding member 310 is a ring or a disk. The shielding member 310 is configured as a polarized magnet, and the magnetic control ring or magnetic control device generates a magnetic field by controlling the current to drive the shielding member 310 to rotate. Alternatively, the shielding member 310 can be controlled to move along the axis by the magnetic control device.

[0099] The inner wall of the process cavity 100 can also be provided with linear guide rails or linear bearings to drive the shielding member 310 to move along the axis, thereby changing the distance between the shielding member 310 and the baffle 200 along the axis.

[0100] See Figure 10 In one embodiment, the shielding member 310 includes a telescopic ring 313, which can be radially scaled along the process cavity 100 to selectively shield the first cutout portion 220. That is, this method opens or covers the first cutout portion 220 radially through radial expansion and contraction. The telescopic ring 313 can be composed of multiple segments, such as... Figure 10 Each segment can be extended or retracted independently, thus enabling the blocking or opening of different first hollow sections 220.

[0101] See Figure 6 and Figure 8 The first hollow part 220 can be a grille or a through hole. If a smaller grille or through hole is provided, the valve body 312 or the second flap 311 will have a smaller volume and mass, and a smaller inertial force, which can realize rapid opening and closing switching and reduce delay.

[0102] See Figure 8 Specifically, when the opening 221 of the first hollow portion 220 is a densely arranged grid of holes or through holes, that is... Figure 8 The opening 221 is a finer aperture, and the circumferential width of the second blocking part 310b is also extremely small. This allows the blocking member 310 to complete an opening switch with only a very small rotation angle within one cycle, resulting in faster response speed, lower moment of inertia, and higher control precision. Furthermore, the angular velocity of the blocking member 310 can be set to allow for rapid switching of the flow cross-section even at slow rotation speeds, facilitating control of the rotational speed settings for the four stages of each cycle. When the rotational speed of the blocking member 310 is slower, it reduces airflow disturbance and friction within the process cavity 100, minimizing the risk of particulate matter generation and backflow into the substrate processing area, thus improving yield.

[0103] This application also provides an opening valve, suitable for use in the aforementioned semiconductor processing apparatus, for constituting a cross-section control section 30, such as... Figure 3 As shown, the device includes a baffle 200, which has a first blocking portion 210 and a first hollow portion 220 arranged alternately in the circumferential direction and extending radially; a movable portion 300, which has a movable blocking member 310 and a driving portion 320. The blocking member 310 is coaxially spaced from the baffle 200. The blocking member 310 includes a second blocking portion 310b and a second hollow portion 310a that are circumferentially alternating and correspond to the radial position of the first hollow portion 220. The driving portion 320 drives the blocking member 310 to rotate oriented around the axis so that the opening valve repeatedly switches between a first opening degree and a second opening degree.

[0104] The aforementioned opening valve, through the cooperation of baffle 200 and coaxially rotating blocking component 310, can achieve rapid switching of opening degree with only directional rotation, without the need to repeatedly change the direction of movement to switch the opening degree. Under constant speed rotation, the inertial force experienced during opening degree switching approaches zero, resulting in fast response speed, good pressure stability, and the ability to directly adapt to different pressure switching cycles by adjusting the rotation speed. It is particularly suitable for high-frequency pressure cycle control in semiconductor process cavities.

[0105] In one embodiment, the area of ​​the first hollow portion 220 is larger than the area of ​​the second blocking portion 310b on the axial projection of the baffle 200, which can ensure that the opening valve still maintains a flow cross section greater than zero when it is in the first opening position, so that the process gas can be discharged smoothly.

[0106] In one embodiment, such as Figure 8 As shown, the circumferential wrap angle of the second blocking part 310b is smaller than that of the first hollow part 220, and / or smaller than that of the first blocking part 210. This ensures that during the time period when the second blocking part 310b rotates within the axial projection of the first hollow part 220 and / or the first blocking part 210, its continued rotation will not change the overall opening of the valve; that is, it is in an idle state. The opening changes only when the second blocking part 310b enters or exits the first hollow part 220 and / or the first blocking part 210.

[0107] By setting different circumferential wrap angles, different pressure control needs can be adapted while keeping the rotational speed of the shielding component 310 constant.

[0108] For example, the second blocking part 310b is smaller than the circumferential wrap angle of the first hollow part 220 and the first blocking part 210, so that during the rotation of the blocking part 310, the opening of the valve is in a cycle of opening increase → opening unchanged → opening decrease → opening unchanged, so that the opening can be more adapted to the pressure switching requirements of processes such as ALE.

[0109] In one embodiment, see Figure 3 , Figure 8 and Figures 12 to 15 The opening valve is a fast-switching opening valve suitable for rapid pressure switching in semiconductor process chambers. It can be integrated as a standard component into the aforementioned semiconductor processing equipment or other vacuum process equipment that requires rapid pressure regulation. It is especially suitable for semiconductor processes that require high-frequency pressure cycling, such as atomic layer etching, atomic layer deposition, and Bosch deep silicon etching.

[0110] In one embodiment, the baffle 200 is an overall ring structure, which can be a single piece or a segmented arc design. It is integrally formed from aluminum alloy or stainless steel, and the surface is anodized or coated with ceramic to improve corrosion resistance and reduce particulate matter generation.

[0111] Optionally, the outer diameter of the annular baffle 200 matches the inner diameter of the process cavity 100 to be installed, and a sealing groove is provided on the outer periphery for installing an O-ring seal to seal the connection with the inner wall of the process cavity 100; a central through hole is formed on the inner periphery for fitting on the radial periphery of the base 140.

[0112] In one embodiment, the annular baffle 200 has a plurality of circumferentially evenly spaced first hollow portions 220 and a plurality of circumferentially evenly spaced first blocking portions 210 formed on its annular body, with the first hollow portions 220 and the first blocking portions 210 being alternately arranged.

[0113] For example, the circumferential wrap angle β of a single first hollow portion 220 and the circumferential wrap angle γ of a single first blocking portion 210. The aspect ratio of the first hollow portion 220, i.e., the ratio of its axial thickness to its maximum radial dimension, is less than 0.5, so gas flow loss along the path is negligible. The total cross-sectional area of ​​all the first hollow portions 220 accounts for more than 70% of the annular body area of ​​the annular baffle 200, resulting in minimal flow resistance at maximum opening.

[0114] In one embodiment, the movable part 300 is a rotating movable part, which is coaxially spaced from the annular baffle 200 and includes an annular blocking member 310 and a driving part 320.

[0115] Optionally, the annular shield 310 uses the same material and surface treatment process as the annular baffle 200.

[0116] In one embodiment, the annular shielding member 310 has a plurality of second hollow portions 310a arranged circumferentially at equal intervals and a plurality of second blocking portions 310b arranged circumferentially at equal intervals, which are the same number as the first hollow portion 220. The second hollow portions 310a and the second blocking portions 310b are alternately arranged.

[0117] For example, the circumferential wrap angle α of a single second blocking portion 310b satisfies α < β and α < γ, that is, the circumferential wrap angle of the second blocking portion 310b is smaller than the circumferential wrap angle of the first hollow portion 220 and smaller than the circumferential wrap angle of the first blocking portion 210. The circumferential wrap angle δ of a single second hollow portion 310a is greater than the circumferential wrap angle β of a single first hollow portion 220.

[0118] In one embodiment, on the axial projection of the annular baffle 200, the total area of ​​the second blocking portion 310b is smaller than the total area of ​​the first hollow portion 220, ensuring that the opening valve still has gas flow when it is at the first opening degree (minimum opening degree), and the flow cross section is always greater than zero.

[0119] The drive unit 320 is used to provide rotational power to the shielding member 310, and can adopt any drive rotation structure suitable for a vacuum cavity. The following are examples:

[0120] In one embodiment, the drive unit 320 employs a magnetohydrodynamic (MHD) sealed high-speed servo motor, which is mounted on the bottom outer wall of the process cavity 100. The output shaft passes through the wall of the process cavity 100 and is fixedly connected to the central support of the annular shield 310. The MHD sealing structure enables vacuum sealing, and the servo motor enables precise angle control and rapid response, making it suitable for high-frequency, high-precision opening switching requirements.

[0121] In one embodiment, the drive unit 320 employs an external magnetic coupling drive device, such as... Figure 18 As shown, the system includes an inner magnetic ring 321, an outer magnetic ring 322, and a drive motor 323. The inner magnetic ring 321 is fixedly installed on the inner or outer peripheral wall of the annular shield 310. The outer magnetic ring 322 is sleeved on the outer wall 101 of the process cavity 100 and coaxially corresponds to the inner magnetic ring 321. The drive motor 323 is connected to the outer magnetic ring 322 for transmission. The drive motor 323 drives the outer magnetic ring 322 to rotate, and through the magnetic coupling between the inner and outer magnetic rings, drives the inner magnetic ring 321 and the annular shield 310 to rotate synchronously. This driving method has no moving sealing components, completely avoiding the risk of vacuum leakage and avoiding the problem of particulate matter contamination caused by internal transmission friction.

[0122] In one embodiment, the drive unit 320 employs an internal magnetic coupling drive device, including a stator assembly and a rotor assembly. The stator assembly is mounted on the outer wall of the process cavity 100, and the rotor assembly is mounted on the inner wall of the process cavity 100 and fixedly connected to the annular shield 310. When the stator assembly is energized, it generates a rotating magnetic field, driving the rotor assembly to rotate the annular shield 310. This drive method also eliminates the need for dynamic sealing components and offers high transmission efficiency and fast response.

[0123] In one embodiment, the drive unit 320 employs an electrostatic drive device, including a fixed electrode and a movable electrode. The fixed electrode is mounted on the inner wall of the process cavity 100, and the movable electrode is mounted on the annular shield 310 and positioned opposite to the fixed electrode. By applying an alternating voltage between the fixed electrode and the movable electrode, an electrostatic force is generated to drive the annular shield 310 to rotate. This drive method has low power consumption, no mechanical wear, and a long service life.

[0124] In one embodiment, a control unit 400 is also included. The control unit 400 is communicatively connected to the drive unit 320 and has pre-stored various opening degree switching programs corresponding to different processes. The rotational speed of the annular blocking component 310 can be set according to process requirements. The control unit 400 can also receive signals from an external pressure gauge 530 to form a closed-loop control and automatically correct the rotational speed to ensure pressure control accuracy.

[0125] In one embodiment, the quick-switching valve employs a non-contact rotary structure, with no friction between the annular shield 310 and the annular baffle 200, thus avoiding particulate contamination and making it suitable for semiconductor processes with high cleanliness requirements. Simultaneously, both the first and second opening degrees are fixed positions, eliminating the need for PID control, resulting in minimal pressure fluctuations in the stabilization section. This design offers advantages such as simple and reliable structure, long service life, and low maintenance costs.

[0126] One embodiment of this application provides a pressure control method, implemented based on the above-described semiconductor processing device, comprising the following steps:

[0127] Provide the aforementioned semiconductor processing device 10, start the vacuum pump 130, and continuously evacuate the second chamber 160 to maintain the second chamber 160 in a low-pressure state.

[0128] High-pressure first process gas is supplied to the first chamber 150, and the chamber is operated in a first process based on the first pressure.

[0129] Low-pressure second process gas is supplied to the first chamber 150, and the chamber is operated in a second process based on the second pressure.

[0130] The first pressure is greater than the second pressure, and the first process and the second process alternate in a cycle, wherein:

[0131] When the pressure in the first chamber 150 increases from the second pressure to the first pressure, the control section 30 reduces the flow cross-section between the first chamber 150 and the second chamber 160, ensuring that the flow cross-section is always greater than zero. At this time, the low-pressure second process gas from the previous process stage can be smoothly discharged, avoiding mixing with the high-pressure first process gas; simultaneously, the exhaust resistance of the first chamber 150 increases, and with the continuous supply of the high-pressure first process gas, the pressure in the first chamber 150 rises; while the pressure in the second chamber 160 is further reduced to a third pressure under the continuous suction of the vacuum pump 130, which is lower than the second pressure.

[0132] When the pressure in the first chamber 150 decreases from the first pressure to the second pressure, the control section 30 increases the flow cross-section between the first chamber 150 and the second chamber 160. At this time, the pressure difference between the first chamber 150 and the second chamber 160 causes the gas in the first chamber 150 to flow into the second chamber 160, thereby reducing the pressure in the first chamber 150 until it approaches the second pressure.

[0133] See Figure 8 In one embodiment, the baffle 200 includes a first blocking portion 210 and a first hollow portion 220 arranged alternately in the circumferential direction. The blocking member 310 is coaxially spaced from the baffle 200. The blocking member 310 includes a second blocking portion 310b and a second hollow portion 310a arranged alternately in the circumferential direction. The blocking member 310 is controlled to rotate about the axis so that the first hollow portion 220 is repeatedly blocked and opened by the second blocking portion 310b.

[0134] In one embodiment, the starting time of reducing the flow cross-section between the first cavity 150 and the second cavity 160 is delayed compared to the starting time of supplying the first process gas. This allows for the rapid discharge of the low-pressure second process gas remaining from the previous stage using a larger flow cross-section at the initial stage of supplying the high-pressure first process gas. After the low-pressure second process gas has been largely discharged, the flow cross-section is then reduced to increase the pressure, further preventing the mixing of the two process gases.

[0135] The following describes in detail the specific process of the pressure control method, using an embodiment of the rotating shielding section control unit as an example:

[0136] See Figures 11-15 A complete process cycle consists of four stages:

[0137] T1 stage (first pressure stabilization stage): The second blocking part 310b covers the first hollow part 220, and the flow cross section is the smallest. At this time, the exhaust resistance of the first cavity 150 is relatively large. With the high-pressure first process gas continuously supplied by the air inlet 110, the pressure of the first cavity 150 is stabilized at the first pressure; at the same time, the pressure of the second cavity 160 is stabilized at the third pressure under the continuous suction of the vacuum pump 130.

[0138] T2 stage (pressure reduction stage): The second blocking part 310b begins to detach from the first hollow part 220, and the flow cross section gradually increases. The pressure difference between the first cavity 150 and the second cavity 160 causes the high-pressure first process gas in the first cavity 150 to flow into the second cavity 160, and the pressure in the first cavity 150 decreases.

[0139] T3 stage (second pressure stabilization stage): The second blocking part 310b corresponds to the first blocking part 210, and the first hollow part 220 is fully opened, with the maximum flow cross-section. At this time, the gas flow resistance between the first cavity 150 and the second cavity 160 is small, and the pressures of the two are balanced, stabilizing at the second pressure. At the same time, low-pressure second process gas is supplied to the first cavity 150 for the second process.

[0140] T4 stage (pressure boosting stage): First, high-pressure first process gas is supplied to the first chamber 150, and the residual low-pressure second process gas is quickly discharged using the large flow cross-section. After a preset delay time, the second blocking part 310b begins to block the first hollow part 220 again, and the flow cross-section gradually decreases. The exhaust resistance of the first chamber 150 gradually increases. With the continuous supply of high-pressure first process gas, the pressure in the first chamber 150 rises until it returns to the first pressure, completing one cycle.

[0141] See Figure 17 By designing the structural parameters of the baffle 200 and the shielding component 310, and controlling the rotational speed of the shielding component 310, the various stages of pressure change can be matched with the process requirements.

[0142] See Figure 17 In one embodiment, the process has a cycle period T, the blocking member has a rotational speed ω, and the central angle θ occupied by an adjacent first blocking portion 210 and a first hollow portion 220 is such that the rotational speed ω = θ / T. Thus, by controlling the rotational speed of the blocking member 310 to ω, the flow cross-section of the first hollow portion 220 can be adjusted from minimum to maximum, then maintained at equilibrium, and then adjusted back to minimum and maintained at equilibrium within a cycle period of T.

[0143] See Figure 17 In one embodiment, the switching time between the first pressure and the second pressure is ΔT, the blocking member 310 has a rotational speed ω, and the central angle θ1 occupied by the second blocking part 310b is such that the rotational speed ω = θ1 / ΔT. Based on the switching time ΔT between the first pressure and the second pressure, and the central angle θ1 occupied by the second blocking part 310b, it is possible to calculate... Figure 15In stage t4, the rotational speed of the second blocking part 310b from the moment it begins to block the first hollow part 220 until it completely aligns with the first hollow part 220 is ω, thereby ensuring that the time for the second pressure to switch to the first pressure is ΔT. Furthermore, it is possible to calculate... Figure 13 In the t2 stage, the rotational speed of the second blocking part 310b from when it is completely aligned with the first hollow part 220 to when it begins to block the first hollow part 220 is ω, thereby ensuring that the time for the second pressure to switch to the first pressure is ΔT.

[0144] See Figure 17 In one embodiment, the first pressure stabilization time is T1, the blocking member 310 has a rotational speed ω, the central angle occupied by the second blocking part 310b is θ0, and the central angle occupied by the first hollow part 220 is θ1, where θ1 ≥ θ0, such that the rotational speed ω = (θ1 - θ0) / T1. To ensure the first pressure stabilization time is T1 by blocking the first hollow part 220 with the second blocking part 310b, it is necessary to calculate the relationship between the time and rotational speed from the point where the second blocking part 310b completely falls within the coverage area of ​​the first hollow part 220 until it no longer covers the first hollow part 220. Figure 12 In the t1 stage, the circumferential angle of the first hollow part 220 is greater than that of the second blocking part 310b. During the rotation, the stabilization time is T1, and the rotation angle is (θ1-θ0), so the rotation speed ω can be calculated.

[0145] See Figure 17 In one embodiment, the second pressure stabilization time is T2, the blocking member has a rotational speed ω, the central angle θ0 occupied by the second blocking part 310b, and the central angle θ2 occupied by the first blocking part 210, where θ2 ≥ θ0, such that the rotational speed ω = (θ2 - θ0) / T2. To ensure the second pressure stabilization time is T2 by ensuring the second blocking part 310b corresponds to the first blocking part 210, it is necessary to calculate the relationship between the time and rotational speed from the point where the second blocking part 310b completely falls within the coverage area of ​​the first hollow part 220 until it no longer covers the first hollow part 220. Figure 14 In the t3 stage, the circumferential angle of the first hollow part 220 is greater than that of the second blocking part 310b. During the rotation, the stabilization time is T2, and the rotation angle is (θ2-θ0), so the rotation speed ω can be calculated.

[0146] See Figure 8 and Figure 10In one embodiment, multiple first hollow portions 220 are distributed circumferentially on the baffle 200, and multiple blocking members 310 are provided. The multiple blocking members 310 are independently controllable. When the pressure of the first cavity 150 is switched, some blocking members 310 are selected as moving blocking members 310 for movement switching, while other blocking members 310 remain unchanged, so as to improve the pressure switching speed. Thus, a specific first hollow portion 220 of the baffle can be opened or blocked as needed.

[0147] See Figure 8 and Figure 10 In one embodiment, the selected motion shield 310 is arranged in a rotationally symmetrical manner around the baffle, thereby making the gas flow through the baffle 200 more uniformly.

[0148] See Figure 2 Specifically, the gas source unit 500 is connected to the first cavity 150 through the first gas supply port 110b and the second gas supply port 110c, and the first gas supply port 110b is controlled by the first valve 510 to open and close, and the second gas supply port 110c is controlled by the second valve 520 to open and close.

[0149] In one embodiment, a pressure gauge 530 is installed in the first cavity 150 to monitor the pressure of the first cavity 150 and feed it back to the control unit 400. The control unit 400 controls the opening and closing of the first valve 510 and the second valve 520. The control unit 400 controls the first gas supply port 110b and the second gas supply port 110c to supply process gas into the first cavity 150. Specifically, multiple gas supply ports can be provided to supply different process gases into the first cavity 150 to meet different process requirements.

[0150] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A semiconductor processing apparatus, comprising a process cavity, wherein a base is disposed within the process cavity to support a substrate; characterized in that, Also includes: A cross-section control unit is located between the base and the sidewall of the process cavity. The cross-section control unit divides the process cavity into a first cavity located upstream of the cross-section control unit and a second cavity located downstream of the cross-section control unit. The cross-section control unit controls the size of the flow cross-section between the first cavity and the second cavity. The substrate is located in the first cavity. An exhaust port is located in the second cavity and is connected to a vacuum pump to create a vacuum. An air inlet, located in the first cavity, is used to supply process gas; The control unit is used to control the section control unit and is configured as follows: The vacuum pump continuously evacuates the second cavity. When pressurizing the first cavity, the flow cross-section is reduced to be greater than zero, so that the pressure in the second cavity is less than the pressure in the first cavity. When performing a pressure reduction operation on the first cavity, the flow cross section is increased to make the pressure in the first cavity and the second cavity converge.

2. The semiconductor processing apparatus according to claim 1, characterized in that, The cross-section control unit includes a first flap, which has a pivot and can be rotated about the pivot to change the size of the flow cross-section.

3. The semiconductor processing apparatus according to claim 1, characterized in that, The cross-section control unit includes a translation plate, which can extend and retract along the direction of the flow cross-section to change the size of the flow cross-section.

4. The semiconductor processing apparatus according to claim 1, characterized in that, The cross-section control part includes a baffle and a movable part. The baffle is fixed to the base and / or the side wall of the process cavity, and has a first blocking part and a first hollow part. The first hollow part connects the first cavity and the second cavity. The movable part has a movable shielding member, which is correspondingly arranged with the first hollow part and is used to adjust the flow cross-section size of the first hollow part.

5. The semiconductor processing apparatus according to claim 4, characterized in that, The ratio of the cross-sectional area of ​​the first hollow portion to the cross-sectional area of ​​the baffle is greater than 70%.

6. The semiconductor processing apparatus according to claim 4, characterized in that, The volume of the second cavity is not less than 1 / 2 of the volume of the first cavity.

7. The semiconductor processing apparatus according to claim 4, characterized in that, The movable part includes a butterfly valve, a swing valve, or a linear motion valve located in the first hollow part.

8. The semiconductor processing apparatus according to claim 4, characterized in that, The first hollow portion includes multiple openings, which are spaced apart along the circumference of the baffle. The blocking member is coaxially spaced with the baffle. The blocking member includes a second blocking portion and a second hollow portion that are alternately arranged in the circumference. The blocking member can rotate around an axis to repeatedly block and open the openings.

9. The semiconductor processing apparatus according to claim 8, characterized in that, The opening is rotationally symmetrical with respect to the axis of the baffle, and the second blocking part is correspondingly arranged with respect to the opening.

10. The semiconductor processing apparatus according to claim 8, characterized in that, In the rotational direction of the blocking member, the circumferential wrap angle of the second blocking part is smaller than the circumferential wrap angle of the opening, and smaller than the circumferential wrap angle of the first blocking part.

11. The semiconductor processing apparatus according to claim 4, characterized in that, The shielding member is axially spaced from the baffle, and the shielding member is located within the second cavity.

12. The semiconductor processing apparatus according to claim 4, characterized in that, The shielding component includes a second flap located within the first hollow portion, the pivot of which is rotatably connected to the inner wall of the first hollow portion to selectively shield the first hollow portion.

13. The semiconductor processing apparatus according to claim 4, characterized in that, The shielding component includes a linear motion plate corresponding to the first hollow portion, and the linear motion plate can adjust the axial gap with the baffle.

14. The semiconductor processing apparatus according to claim 4, characterized in that, The shielding component includes a telescopic ring that can be radially scaled along the process cavity to selectively shield the first cutout portion.

15. The semiconductor processing apparatus according to claim 4, characterized in that, The active part also includes a driving part, which is controlled by the control unit to drive the shielding member to rotate, pivot, or move linearly to adjust the size of the flow cross section between the first cavity and the second cavity.

16. A pressure control method, characterized in that, include: Provides the semiconductor processing apparatus as described in claim 1, and continuously evacuates the second cavity; A first process gas is supplied to the first cavity, and the cavity is operated in a first process based on a first pressure; The first cavity is supplied with a second process gas and is operated in a second process based on a second pressure. The first pressure is greater than the second pressure, and the first process and the second process alternate in a cycle, wherein, When the pressure in the first cavity increases from the second pressure to the first pressure... The flow cross-section between the first cavity and the second cavity is reduced to be greater than zero, thereby reducing the pressure in the second cavity to a third pressure, which is less than the second pressure. When the pressure in the first cavity decreases from the first pressure to the second pressure Increase the flow cross section so that the pressure in the first cavity and the second cavity is similar to the second pressure.

17. The pressure control method according to claim 16, characterized in that, The baffle includes a first blocking portion and a first hollow portion arranged alternately in a circumferential direction. A shielding member is coaxially spaced from the baffle. The shielding member includes a second blocking portion and a second hollow portion arranged alternately in a circumferential direction. The blocking member is controlled to rotate about an axis, so that the first hollow part is repeatedly blocked and opened by the second blocking part.

18. The pressure control method according to claim 16, characterized in that, The start time of reducing the flow cross-section between the first cavity and the second cavity is delayed compared to the start time of supplying the first process gas.

19. An opening valve, suitable for use in the semiconductor processing apparatus as described in claim 1, for constituting the cross-section control section, characterized in that, include: The baffle has alternating first blocking portions and first hollow portions arranged radially in a circumferential direction. The movable part has a movable blocking member and a driving part. The blocking member is coaxially spaced from the baffle. The blocking member includes a second blocking part and a second hollow part that are circumferentially alternately arranged and correspond to the radial position of the first hollow part. The driving part drives the blocking member to rotate around the axis so that the opening valve repeatedly switches between a first opening degree and a second opening degree.

20. The opening valve according to claim 19, characterized in that, The circumferential wrap angle of the second blocking part is smaller than the circumferential wrap angle of the first hollow part, and / or The circumferential wrap angle of the second blocking part is smaller than that of the first blocking part.

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