An antistatic temporary bonding material, a preparation method and application thereof

Abstract

This invention provides an antistatic temporary bonding material, its preparation method, and its application. The raw materials for preparing the antistatic temporary bonding material comprise the following components by mass percentage: 5%-10% main resin, 13%-30% tackifying resin, 0.1%-1% antioxidant, 0.5%-5% antistatic agent, and 54%-80% solvent. The main resin includes a non-polar main resin, and the tackifying resin includes hydrogenated petroleum resin. This invention, through the selection of the main resin and tackifying resin, ensures good compatibility between the antistatic agent and the system, overcoming the inherent drawback of temporary bonding materials that cannot avoid static electricity accumulation, thus ensuring the stability of the wafer during processing. Simultaneously, the temporary bonding material exhibits good resistance to chemical solvents, heat resistance, and adhesion properties, and is easy to clean.

Description

Technical Field

[0001] This invention belongs to the field of bonding materials technology, and particularly relates to an antistatic temporary bonding material, its preparation method and application. Background Technology

[0002] As semiconductor technology continues to advance towards 7nm and below, chip integration and complexity are constantly increasing, making traditional two-dimensional planar packaging insufficient to meet system-level performance requirements. Advanced integration technologies such as 3D integrated circuits (3D ICs), through-silicon vias (TSVs), and wafer-level packaging (WLP) have become the mainstream direction of the industry. These technologies generally require significant wafer thinning to below 100μm, or even reaching the tens of micrometer level, to achieve manufacturing goals such as multi-layer stacking, vertical interconnection, and high-density wiring.

[0003] However, ultrathin wafers have extremely low mechanical strength and significantly reduced rigidity, making them highly susceptible to warping, cracking, and even complete breakage. Because they cannot directly support their own structural integrity, ultrathin wafers cannot independently complete subsequent processing steps and must rely on external mechanical carriers to maintain their morphological stability and process compatibility.

[0004] Temporary bonding / debonding (TBDB) technology has thus become a core technological solution for overcoming the bottleneck in ultra-thin wafer fabrication. This process temporarily bonds the device wafer to the substrate (such as silicon, glass, or sapphire) by applying a temporary bonding material, providing reliable mechanical support and structural protection during subsequent processes such as etching, wiring, passivation layer deposition, bump fabrication, and stack alignment. After all processes are completed, the substrate and device are separated non-destructively through methods such as thermal sliding, chemical dissolution, laser irradiation, or mechanical peeling, ensuring the integrity and electrical performance of the device wafer remain undamaged. This technology has been widely applied in key areas such as advanced packaging, 3D integration, and heterogeneous integration, becoming an essential step in the large-scale manufacturing of semiconductor devices.

[0005] Currently, temporary bonding materials are mainly based on organic polymer systems, including silicone resins and thermoplastic resins. These materials have the characteristics of good film-forming properties, high thermal stability, and wide bonding / debonding process windows. However, their molecular structures generally lack conductive pathways or charge dissipation mechanisms. During wafer bonding, transport, processing, and debonding operations, static electricity accumulation is easily induced by factors such as triboelectric charging and electric field induction.

[0006] On the one hand, electrostatic adsorption significantly exacerbates particulate contamination on wafer surfaces. Dust and particulate contaminants adhere firmly to the patterned area under electrostatic action, causing pattern failures and short circuits in subsequent precision pattern transfer processes such as photolithography, etching, and deposition, directly leading to a decrease in chip yield. On the other hand, for highly integrated and sensitive electronic devices, electrostatic discharge (ESD) can directly cause transistor breakdown and circuit damage, especially in ultra-thin wafer processing, where the damage rate caused by electrostatic discharge increases significantly with decreasing wafer thickness. Furthermore, electrostatic repulsion interferes with the uniform wetting and tight adhesion of material interfaces during bonding, resulting in uneven bonding strength distribution, reduced alignment accuracy and interlayer alignment deviations, which in turn leads to increased wafer warpage, carrier detachment, and even the risk of fragmentation, seriously affecting manufacturing stability and mass production efficiency.

[0007] Therefore, developing a temporary bonding material with antistatic properties, excellent solvent resistance, and adhesive properties is a technical problem that urgently needs to be solved in this field. Summary of the Invention

[0008] To address the shortcomings of existing technologies, the present invention aims to provide an antistatic temporary bonding material, its preparation method, and its application. By selecting the main resin and the tackifying resin, the present invention ensures good compatibility between the antistatic agent and the system, overcoming the defect that temporary bonding materials cannot avoid static electricity accumulation and ensuring the stability of the wafer during processing. At the same time, the temporary bonding material has good resistance to chemical solvents, heat resistance, and adhesion properties, good film surface uniformity, and is easy to clean.

[0009] To achieve this objective, the present invention adopts the following technical solution: In a first aspect, the present invention provides an antistatic temporary bonding material, wherein the raw materials for preparing the antistatic temporary bonding material comprise the following components by mass percentage: Main resin 5%-10%; Tackifying resin 13%-30%; Antioxidant 0.1%-1%; Antistatic agent 0.5%-5%; Solvent 54%-80%; The main resin includes a non-polar main resin; The tackifying resin includes hydrogenated petroleum resin.

[0010] This invention selects a non-polar host resin. Antistatic agents often contain strongly polar groups or are ionic polymers, leading to compatibility issues. Therefore, hydrogenated petroleum resin is used as the tackifying resin. Being non-polar itself, it can form a stable "non-polar continuous phase" with the non-polar host resin molecules. Simultaneously, hydrogenated petroleum resin retains a small amount of weakly polar groups (such as hydroxyl and methylene groups) during its preparation. These weakly polar groups can form hydrogen bonds or dipole-dipole interactions with the strongly polar groups in the antistatic agent molecules without compromising compatibility with the host resin due to excessive polarity. This establishes a polar transition bridge between the non-polar host resin and the strongly polar antistatic agent, solving the compatibility problem of the antistatic agent. By introducing an antistatic agent, this invention overcomes the inherent limitations of temporary bonding materials in preventing static electricity accumulation, protecting wafers and devices from electrostatic damage and ensuring wafer stability during processing.

[0011] The temporary bonding material provided by this invention uses a base resin with low polarity, which can form a strongly hydrophobic layer on the surface of the bonding film layer, significantly improving its resistance to chemical reagents during wafer processing. Simultaneously, this temporary bonding material exhibits excellent solubility in cleaning agents, making it easy to remove completely, thereby effectively improving product yield.

[0012] This invention selects a non-polar host resin and uses hydrogenated petroleum resin as the tackifying resin. It utilizes the small amount of weakly polar groups remaining in the resin to form hydrogen bonds or dipole-dipole interactions, thus solving the compatibility problem between the antistatic agent and the host resin. The temporary bonding material has good antistatic properties, excellent chemical solvent resistance, is easy to clean, has good film uniformity, and has good heat resistance and bonding strength.

[0013] The amount of the main resin can be 5%, 6%, 7%, 8%, 9% or 10%, etc.

[0014] The amount of the tackifying resin can be 13%, 15%, 17%, 19%, 21%, 23%, 25%, 27%, 29%, or 30%, etc.

[0015] The amount of antioxidant used can be 0.1%, 0.2%, 0.3%, 0.4%, 0.5%, 0.6%, 0.7%, 0.8%, 0.9%, or 1%, etc.

[0016] The amount of the antistatic agent can be 0.5%, 0.8%, 1%, 1.3%, 1.7%, 2%, 2.3%, 2.7%, 3%, 3.3%, 3.7%, 4%, 4.3%, 4.7%, or 5%, etc.

[0017] The amount of solvent used can be 54%, 60%, 65%, 70%, 75%, or 80%, etc.

[0018] In this invention, if the amount of antistatic agent is small, the surface resistance of the temporary bonding material is high and the antistatic performance is weak; if the amount of antistatic agent is large, the surface resistance of the temporary bonding material is low and the antistatic performance is strong, but its compatibility with the system is poor, the film surface has defects, the bonding resistance to chemical solutions deteriorates, and it is not easy to clean.

[0019] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. The purpose and beneficial effects of the present invention can be better achieved and realized through the following preferred technical solutions.

[0020] Preferably, the softening point of the tackifying resin is 85-120℃, such as 85℃, 86℃, 88℃, 90℃, 92℃, 94℃, 96℃, 98℃, 100℃, 102℃, 104℃, 106℃, 108℃, 110℃, 112℃, 114℃, 116℃, 118℃, or 120℃.

[0021] If the softening point of the tackifying resin is too low, the overall softening point of the temporary bonding material will be low, resulting in excessive fluidity at high temperatures and excessive glue overflow during bonding. If the softening point of the tackifying resin is too high, the overall softening point of the material will be too high, making it difficult to soften at high temperatures, resulting in poor bonding and defects such as bubbles during bonding.

[0022] Preferably, the weight-average molecular weight of the tackifying resin is 100-20000, such as 100, 500, 1000, 3000, 5000, 7000, 9000, 10000, 12000, 14000, 16000, 18000 or 20000, and more preferably 500-5000.

[0023] Preferably, the non-polar host resin includes any one or a combination of at least two of polyisobutylene resin, ethylene propylene rubber, cis-butadiene rubber, or isoprene rubber, and more preferably polyisobutylene resin and / or isoprene rubber.

[0024] Preferably, the weight-average molecular weight of the main resin is 10,000 to 2,000,000, such as 10,000, 50,000, 100,000, 200,000, 400,000, 600,000, 800,000, 1,000,000, 1,200,000, 1,400,000, 1,600,000, 1,800,000 or 2,000,000, and more preferably 50,000 to 1,500,000.

[0025] Preferably, the antioxidant includes hindered phenolic antioxidants and / or phosphite antioxidants.

[0026] Preferably, the hindered phenolic antioxidant includes any one or a combination of at least two of pentaerythritol tetrakis[β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], octadecyl β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, or 2,6-di-tert-butyl-4-methylphenol.

[0027] Preferably, the phosphite antioxidant includes any one or a combination of at least two of tris(2,4-di-tert-butylphenyl) phosphite, pentaerythritol distearate diphosphite, or triphenyl phosphite.

[0028] Preferably, the antistatic agent includes any one or a combination of at least two of ionic antistatic agents, nonionic antistatic agents, or polymeric antistatic agents.

[0029] Preferably, the anionic antistatic agent comprises any one or a combination of at least two of alkyl sulfate salts, alkylbenzene sulfonates, higher fatty acid salts, phosphate salts, polyacrylates, polystyrene sulfonates, or maleic anhydride copolymer salts.

[0030] Preferably, the cationic antistatic agent comprises any one or a combination of at least two of quaternary ammonium salts, alkyl imidazoline salts, alkyl tertiary amine nitrates, or alkyl tertiary amine sulfates.

[0031] Preferably, the zwitterionic antistatic agent comprises any one or a combination of at least two of the following: dodecyl dimethyl betaine, alkyl dicarboxymethyl ammonium hydantoin, alkyl imidazoline carboxylate, alkyl imidazoline phosphate, N-alkyl-β-alanine salt, or alkyl glycine salt.

[0032] Preferably, the nonionic antistatic agent comprises any one or a combination of at least two of fatty acid polyols, polyether / ethylene oxide adducts, fatty acid alkanolamides, ethyl borate esters, or organosilicon polyether copolymers.

[0033] Preferably, the polymeric antistatic agent comprises any one or a combination of at least two of polyethylene oxide, polyether ester amide, polyethylene glycol-grafted polypropylene, sulfonated polystyrene, polyether block amide, ionic liquid polymer, or maleic anhydride-grafted polyolefin-polyether copolymer.

[0034] Preferably, the ionic liquid polymer includes any one or a combination of at least two of imidazole ionic liquid polymers, pyridine ionic liquid polymers, pyrrolidine / piperidine ionic liquid polymers, or copolymer / functionalized ionic liquid polymers.

[0035] Preferably, the solvent includes an organic solvent.

[0036] Preferably, the organic solvent comprises any one or a combination of at least two of p-mentholane, limonene, dodecene, dodecane, ethylcyclohexane, or decahydronaphthalene, and more preferably any one or a combination of at least two of p-mentholane, dodecene, or dodecane.

[0037] In a second aspect, the present invention provides a method for preparing an antistatic temporary bonding material as described in the first aspect, the method comprising the following steps: The main resin, tackifying resin, antioxidant, antistatic agent and solvent are mixed to obtain the antistatic temporary bonding material.

[0038] Preferably, the mixture further includes filtration.

[0039] Preferably, the preparation method of the antistatic temporary bonding material specifically includes the following steps: (1) Add solvent and main resin to the stirred tank, start stirring, and at the same time start the cooling water circulation system; (2) Add tackifying resin, antioxidant and antistatic agent to step (1) in sequence, stir until a clear and transparent liquid is formed, filter the material to obtain the antistatic temporary bonding material.

[0040] Thirdly, the present invention provides an application of the antistatic temporary bonding material as described in the first aspect in semiconductor device fabrication.

[0041] Preferably, the semiconductor device comprises a wafer.

[0042] Preferably, the method of application includes the following steps: (1) The antistatic temporary bonding material as described in the first aspect is coated on one side of the wafer surface and dried to obtain a coated wafer; (2) The coated wafer and the substrate are bonded together to obtain a temporary bonded wafer; (3) Perform back-side processing on the temporary bonded wafer, and then debond and clean it.

[0043] Preferably, the amount of coating used is 10-20 mL / tablet, such as 10 mL / tablet, 12 mL / tablet, 14 mL / tablet, 16 mL / tablet, 18 mL / tablet, or 20 mL / tablet.

[0044] Preferably, the coating method includes spin coating.

[0045] Preferably, the spin coating speed is 1000-2000 rpm, such as 1000 rpm, 1200 rpm, 1400 rpm, 1600 rpm, 1800 rpm or 2000 rpm.

[0046] Preferably, the drying temperature is 140-160℃, such as 140℃, 145℃, 150℃, 155℃ or 160℃.

[0047] Preferably, the drying time is 4-10 minutes, such as 4 minutes, 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, or 10 minutes.

[0048] Preferably, the bonding temperature is 160-200℃, such as 160℃, 170℃, 180℃, 190℃ or 200℃.

[0049] Preferably, the bonding pressure is 1-10 kN, such as 1 kN, 2 kN, 4 kN, 6 kN, 8 kN or 10 kN.

[0050] Preferably, the bonding time is 5-10 minutes, such as 5 minutes, 6 minutes, 7 minutes, 8 minutes, 9 minutes, or 10 minutes.

[0051] Preferably, the back-side process includes any one or a combination of at least two of grinding, polishing, photolithography, baking, or chemical vapor deposition.

[0052] Preferably, the cleaning agent used for the cleaning includes Samcien Remover.

[0053] Compared with the prior art, the present invention has the following beneficial effects: This invention selects a non-polar host resin and uses hydrogenated petroleum resin as the tackifying resin. It utilizes the small amount of weakly polar groups remaining in the resin to form hydrogen bonds or dipole-dipole interactions, thus solving the compatibility problem between the antistatic agent and the host resin. The temporary bonding material has good antistatic properties, excellent chemical solvent resistance, is easy to clean, has good film uniformity, and has good heat resistance and bonding strength.

[0054] Specifically: Surface resistance ≤ 1×10 10 Ω, after immersion in 65% nitric acid solution at 60℃ for 2 hours, showed no visible erosion. After cleaning, the number of particles larger than 1μm on the wafer surface did not exceed 20, the total thickness change (TTV) was ≤0.25μm, the mass loss after constant heating at 250℃ for 1 hour was ≤1.6%, and the bond strength was ≥1.4N / mm. 2 . Detailed Implementation

[0055] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0056] Unless otherwise specified, some of the raw material information involved in the following specific embodiments of the present invention is shown in Table 1. Other raw materials not shown are all conventional materials in the art and can be purchased from commercially available products.

[0057] Table 1 Examples 1-6 and Comparative Examples 1-6 each provide a temporary bonding material, the raw materials and amounts of which are shown in Tables 2 and 3, and the amount of each component is in kg.

[0058] Table 2 Table 3 The preparation methods of the temporary bonding materials provided in Examples 1-6 and Comparative Examples 1-6 include the following steps: Organic solvent and main resin were added to a stirred tank equipped with a mechanical stirring and circulating water cooling system. Stirring was started and carried out at 200 rpm for 7 days. After the main resin was completely dissolved, thickening resin, antioxidant and antistatic agent were added while stirring and stirred until homogeneous. During this period, the temperature change inside the tank was observed. If the temperature rose too quickly, the temperature of the circulating cooling water was adjusted to control the temperature at 40℃ and stirred for 12 hours. When the material inside the tank became clear and transparent, stirring was stopped, the material was discharged and filtered to obtain temporary bonded material.

[0059] Performance testing (1) Film surface condition and TTV: Use a microscope to observe whether there are pits, wrinkles or missing adhesive at the edge of the coating, and use Corning Flatmaster 200 flatness tester to measure the uniformity of the film surface.

[0060] (2) Heat resistance: The mass loss of the film layer at 250℃ for 1 hour was determined by thermogravimetric analysis.

[0061] (3) Film bonding strength: The bonding strength test was conducted using a universal testing machine. During the test, the bonding adhesive sample was spin-coated onto the bonding area of ​​the test piece (15mm × 25mm). After drying, the bonding areas of the two test pieces were bonded together. After the film cured, the excess adhesive was removed, and the test piece was placed in the fixture of the testing machine for tensile testing. When the test piece broke under tension, the maximum tensile force (in N) at the point of breakage was recorded. The maximum tensile force divided by the area of ​​the bonding area of ​​the test piece is the bonding strength of the sample, in N / mm². 2 .

[0062] (4) Surface resistance test: The surface resistance of the temporary bonding material adhesive layer was determined in accordance with GB / T 10064-2006 "Test method for determining the insulation resistance of solid insulating materials".

[0063] (5) Resistance to chemical solution corrosion: Immerse the temporarily bonded wafer in a chemical solution (65% concentrated nitric acid) for a period of time (60℃, 2h), then take it out, rinse it with clean water, dry it, and visually observe whether there is any dissolution and whitening at the edge of the temporarily bonded wafer. If dissolution and whitening are found, it is visible corrosion. If dissolution and whitening are not found, it is no visible corrosion. In addition, use a microscope to observe the depth of corrosion at the edge of the temporarily bonded wafer.

[0064] (6) Cleaning effect test: After the temporary bonding is broken, the wafer is immersed in the cleaning agent for 2 minutes, then the cleaning agent is added dropwise while spin-coating at 1000 rpm for 2 minutes. Finally, the wafer is rinsed with isopropanol for 30 seconds to remove the residual cleaning agent and dried. The number of particles on the wafer surface is scanned using AOI and the information is recorded.

[0065] The temporary bonding materials provided in Examples 1-6 and Comparative Examples 1-6 were tested according to the above test methods. The test results are shown in Tables 4 and 5. Table 4 Table 5 This invention solves the compatibility problem between the antistatic agent and the main resin by compounding specific components in specific amounts and using hydrogenated petroleum resin as the tackifying resin. It leverages the residual weakly polar groups to form hydrogen bonds or dipole-dipole interactions, thus generating a temporary bonded material with excellent antistatic properties and a surface resistivity ≤1×10⁻⁶. 10 Ω exhibits excellent resistance to chemical solvents; after immersion in 65% nitric acid solution at 60℃ for 2 hours, no visible corrosion is observed. It is easy to clean, with no more than 20 particles larger than 1 micrometer on the wafer surface, good film uniformity, and a total thickness variation ≤0.25μm. It also possesses good heat resistance, with a mass loss ≤1.6% after constant heating at 250℃ for 1 hour, and an adhesion strength ≥1.4N / mm². 2 .

[0066] In Comparative Example 1, the absence of antistatic agent resulted in a temporary bonded material with high surface resistance and poor antistatic performance. In Comparative Example 2, insufficient antistatic agent led to a temporary bonded material with high surface resistance and poor antistatic performance. In Comparative Example 3, excessive antistatic agent resulted in a temporary bonded material with low surface resistance and strong antistatic performance, but poor compatibility between the antistatic agent and the system led to defects on the film surface, decreased heat resistance, insufficient chemical resistance of the bonded material, and reduced cleaning performance. In Comparative Examples 4-5, the addition of other types of antistatic agents resulted in poor compatibility with the system, severe film defects, and insufficient chemical resistance and cleaning performance of the bonded material. In Comparative Example 6, the use of other tackifying resins led to poor compatibility of the components, resulting in poor adhesive stability, easy phase separation, and a poor film surface with obvious whitening areas after coating.

[0067] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Those skilled in the art should understand that any variations or substitutions that can be easily conceived by those skilled in the art within the technical scope disclosed in the present invention fall within the scope of protection and disclosure of the present invention.

Claims

1. An antistatic temporary bonding material, characterized in that, The raw materials for preparing the antistatic temporary bonding material include the following components by mass percentage: Main resin 5%-10%; Tackifying resin 13%-30%; Antioxidant 0.1%-1%; Antistatic agent 0.5%-5%; Solvent 54%-80%; The main resin includes a non-polar main resin; The tackifying resin includes hydrogenated petroleum resin.

2. The antistatic temporary bonding material according to claim 1, characterized in that, The softening point of the tackifying resin is 85-120℃; Preferably, the weight-average molecular weight of the tackifying resin is 100-20000, and more preferably 500-5000.

3. The antistatic temporary bonding material according to claim 1 or 2, characterized in that, The non-polar host resin includes any one or a combination of at least two of polyisobutylene resin, ethylene propylene rubber, cis-butadiene rubber or isoprene rubber, and more preferably polyisobutylene resin and / or isoprene rubber. Preferably, the weight-average molecular weight of the main resin is 10,000 to 2,000,000, and more preferably 50,000 to 1,500,000. Preferably, the antioxidant includes hindered phenolic antioxidants and / or phosphite antioxidants; Preferably, the hindered phenolic antioxidant includes any one or a combination of at least two of pentaerythritol tetrakis[β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate], octadecyl β-(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, or 2,6-di-tert-butyl-4-methylphenol. Preferably, the phosphite antioxidant includes any one or a combination of at least two of tris(2,4-di-tert-butylphenyl) phosphite, pentaerythritol distearate diphosphite, or triphenyl phosphite.

4. The antistatic temporary bonding material according to any one of claims 1-3, characterized in that, The antistatic agent includes any one or a combination of at least two of the following: ionic antistatic agents, nonionic antistatic agents, or polymeric antistatic agents. Preferably, the ionic antistatic agent includes any one or a combination of at least two of anionic antistatic agents, cationic antistatic agents, or zwitterionic antistatic agents; Preferably, the anionic antistatic agent comprises any one or a combination of at least two of alkyl sulfate salts, alkylbenzene sulfonates, higher fatty acid salts, phosphate salts, polyacrylates, polystyrene sulfonates, or maleic anhydride copolymer salts. Preferably, the cationic antistatic agent comprises any one or a combination of at least two of quaternary ammonium salts, alkyl imidazoline salts, alkyl tertiary amine nitrates, or alkyl tertiary amine sulfates; Preferably, the zwitterionic antistatic agent comprises any one or a combination of at least two of the following: dodecyl dimethyl betaine, alkyl dicarboxymethyl ammonium hydantoin, alkyl imidazoline carboxylate, alkyl imidazoline phosphate, N-alkyl-β-alanine salt, or alkyl glycine salt. Preferably, the nonionic antistatic agent comprises any one or a combination of at least two of fatty acid polyols, polyether / ethylene oxide adducts, fatty acid alkanolamides, ethyl borate esters, or organosilicon polyether copolymers. Preferably, the polymeric antistatic agent includes any one or a combination of at least two of polyethylene oxide, polyether ester amide, polyethylene glycol grafted polypropylene, sulfonated polystyrene, polyether block amide, ionic liquid polymer, or maleic anhydride grafted polyolefin-polyether copolymer. Preferably, the ionic liquid polymer includes any one or a combination of at least two of imidazole ionic liquid polymers, pyridine ionic liquid polymers, pyrrolidine / piperidine ionic liquid polymers, or copolymer / functionalized ionic liquid polymers.

5. The antistatic temporary bonding material according to any one of claims 1-4, characterized in that, The solvent includes organic solvents; Preferably, the organic solvent comprises any one or a combination of at least two of p-mentholane, limonene, dodecene, dodecane, ethylcyclohexane, or decahydronaphthalene, and more preferably any one or a combination of at least two of p-mentholane, dodecene, or dodecane.

6. A method for preparing an antistatic temporary bonding material as described in any one of claims 1-5, characterized in that, The preparation method includes the following steps: The main resin, tackifying resin, antioxidant, antistatic agent and solvent are mixed to obtain the antistatic temporary bonding material.

7. The preparation method according to claim 6, characterized in that, The mixture also includes filtration.

8. The application of an antistatic temporary bonding material as described in any one of claims 1-5 in semiconductor device fabrication; Preferably, the semiconductor device comprises a wafer.

9. The application according to claim 8, characterized in that, The method of application includes the following steps: (1) The antistatic temporary bonding material as described in any one of claims 1-5 is coated on one side of the wafer and dried to obtain a coated wafer; (2) The coated wafer and the substrate are bonded together to obtain a temporary bonded wafer; (3) Perform back-side processing on the temporary bonded wafer, and then debond and clean it.

10. The application method according to claim 9, characterized in that, The amount of coating used is 10-20 mL / piece; Preferably, the coating method includes spin coating; Preferably, the spin coating speed is 1000-2000 rpm; Preferably, the drying temperature is 140-160°C; Preferably, the drying time is 4-10 minutes; Preferably, the bonding temperature is 160-200℃; Preferably, the bonding pressure is 1-10 kN; Preferably, the bonding time is 5-10 minutes; Preferably, the back-side process includes any one or a combination of at least two of grinding, polishing, photolithography, baking, or chemical vapor deposition.

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