Optoelectronic device and method for manufacturing an optoelectronic device, display device

Abstract

This application belongs to the field of display technology and relates to an optoelectronic device and its fabrication method, as well as a display apparatus. The optoelectronic device includes an anode, a hole functional layer, an active layer, an electron functional layer, and a cathode. The electron functional layer is made of a first core-shell material, the core of which includes a first N-type semiconductor material, and the shell material includes a first carbon material; and / or, a first interface layer is provided between the active layer and the hole functional layer, the first interface layer including a second core-shell material, the core of which includes a first P-type semiconductor material, and the shell material includes a second carbon material; and / or, a second interface layer is provided between the active layer and the electron functional layer, the second interface layer including a third core-shell material, the core of which includes a second N-type semiconductor material, and the shell material includes a third carbon material. The above materials have high hole / electron transport performance and a small contact angle with water, enabling them to absorb water oxygen and preventing water oxygen from entering the light-emitting layer for hydrolysis or oxidation, thereby improving the lifetime and external quantum efficiency of the optoelectronic device.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to an optoelectronic device, a method for fabricating the same, and a display apparatus. Background Technology

[0002] In existing technologies, the external quantum efficiency and lifespan of optoelectronic devices still need to be improved. Summary of the Invention

[0003] To address the aforementioned technical problems, this application provides an optoelectronic device, which employs the following technical solution:

[0004] This application provides an optoelectronic device comprising a stacked anode, a hole functional layer, an active layer, an electronic functional layer, and a cathode. The electronic functional layer is made of a first core-shell material, the core material of which is a first N-type semiconductor material, and the shell material of which is a first carbon material; and / or...

[0005] A first interface layer is provided between the active layer and the hole-functional layer. The material of the first interface layer includes a second core-shell material. The core material of the second core-shell material includes a first p-type semiconductor material, and the shell material of the second core-shell material includes a second carbon material; and / or...

[0006] A second interface layer is provided between the active layer and the electronic functional layer. The material of the second interface layer includes a third core-shell material. The core material of the third core-shell material includes a second N-type semiconductor material, and the shell material of the third core-shell material includes a third carbon material.

[0007] Accordingly, this application can also provide a method for fabricating an optoelectronic device, the method comprising:

[0008] Provide anode;

[0009] An active layer is formed on the anode;

[0010] A cathode is formed on the active layer;

[0011] Prior to the step of forming the active layer above the anode, the method further includes the following steps:

[0012] An electronic functional layer is formed on the anode;

[0013] A first interface layer solution is provided, and the first interface layer solution is deposited on the anode to form a first interface layer. The material of the first interface layer solution includes a second core-shell material, the core material of the second core-shell material includes a first p-type semiconductor material, and the shell material of the second core-shell material includes a second carbon material; and / or,

[0014] Prior to the step of forming a cathode over the active layer, the following steps are also included:

[0015] An electronic functional layer solution is provided, and the electronic functional layer solution is deposited on the active layer to form an electronic functional layer. The electronic functional layer solution includes a first core-shell material, the core material of which includes a first p-type semiconductor material, and the shell material of which includes a first carbon material; and / or...

[0016] After forming an electronic functional layer on the active layer, the following steps are also included;

[0017] A second interface layer solution is provided to deposit the second interface layer on the electronic functional layer to form a second interface layer. The material of the second interface layer solution includes a third core-shell material. The core material of the third core-shell material includes a second N-type semiconductor material, and the shell material of the third core-shell material includes a third carbon material.

[0018] Accordingly, this application also provides a display device, the display device comprising the optoelectronic device described in any one of the above embodiments; or,

[0019] The optoelectronic devices in the display device are prepared using the optoelectronic device preparation method described in any one of the above embodiments.

[0020] The optoelectronic devices described in this application have a long lifespan. Attached Figure Description

[0021] To more clearly illustrate the solutions in this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1 This is a structural diagram of the optoelectronic device according to an embodiment of the present application, in which the interface layer includes an electronic functional layer and a first interface layer;

[0023] Figure 2 This is a structural diagram of the optoelectronic device according to an embodiment of this application, where the interface layer includes a hole functional layer and a second interface layer.

[0024] Figure 3 This is a structural diagram of the optoelectronic device according to an embodiment of this application, where the electronic functional layer includes a first core-shell material;

[0025] Figure 4 This application describes a method for fabricating an optoelectronic device that includes a hole functional layer, a first interface layer, and a second interface layer.

[0026] Figure label:

[0027] The optoelectronic device includes: 10, 21, 22, 100, 200, 300, 400, 500, 600, 700, and 800. Detailed Implementation

[0028] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Furthermore, it should be understood that the specific embodiments described herein are only for illustration and explanation of this application and are not intended to limit this application.

[0029] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the device. Furthermore, in the description of this application, the term "comprising" means "including but not limited to". The terms first, second, third, etc., are used merely as illustrative purposes and do not impose numerical requirements or establish a numerical order.

[0030] In this application, "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. A and B can be singular or plural.

[0031] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c," or "at least one of a, b, and c," can both mean: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple.

[0032] Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a hard limitation on the scope of this application; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is referred to herein, it means including any referenced number (fraction or integer) within the referred range.

[0033] Please refer to Figures 1 to 3 The optoelectronic device includes a stacked anode 100, a hole functional layer (including a hole injection layer 200 and a hole transport layer 300), an active layer (light-emitting layer 400), an electronic functional layer (including an electron injection layer 600 and an electron transport layer 700), and a cathode 800. The electronic functional layer is made of a first core-shell material, the core material of which is a first N-type semiconductor material, and the shell material of which is a first carbon material; and / or,

[0034] A first interface layer 21 is provided between the active layer and the hole functional layer. The material of the first interface layer 21 includes a second core-shell material. The core material of the second core-shell material includes a first P-type semiconductor material, and the shell material of the second core-shell material includes a second carbon material. And / or, a first interface layer 22 is provided between the active layer and the electronic functional layer. The material of the first interface layer 22 includes a third core-shell material. The core material of the third core-shell material includes a second N-type semiconductor material, and the shell material of the third core-shell material includes a third carbon material.

[0035] In this embodiment, firstly, the second core-shell material contains a first P-type semiconductor material, and the first core-shell material and the third core-shell material contain a first N-type semiconductor material and a second N-type semiconductor material, respectively. Therefore, it has strong conductivity, which can effectively promote electron / hole transport and improve the external quantum transport efficiency of the optoelectronic device 10.

[0036] Secondly, the contact angle between the aforementioned materials and water is small, thus the film formed by them has strong superhydrophilicity. In summary, the optoelectronic device 10 of this embodiment can absorb water and oxygen by using at least one porous metal oxide layer among the hole functional layer, the first interface layer 21, the electronic functional layer, and the first interface layer 22 after water and oxygen enter, thereby preventing water and oxygen from entering the light-emitting layer 400 and causing the material of the light-emitting layer 400 to be hydrolyzed or oxidized, thereby improving the service life of the optoelectronic device 10 and improving the external quantum efficiency of the optoelectronic device 10.

[0037] Then, since the first carbon material, the second carbon material, and the third carbon material all contain carbon elements, they have a certain elasticity, thereby avoiding the formation of cracks in the film layer due to volume shrinkage during the production process such as annealing. Therefore, at least one of the hole functional layer, the first interface layer 21, the electronic functional layer, and the first interface layer 22 has a uniform morphology, which can effectively improve the external quantum efficiency and service life of the optoelectronic device 10.

[0038] Furthermore, the electronegativity of the first metallic material is greater than 1.61; and / or,

[0039] The material of the first interface layer further includes a second doped material, the second doped material comprising a second metallic material having an electronegativity greater than 1.61; and / or,

[0040] The material of the second interface layer further includes a third doped material, which includes a third metal material with an electronegativity greater than 1.61.

[0041] In this embodiment, the electronegativity of the first, second, and third metal materials is greater than 1.61, which enables the materials to have high conductivity, thereby improving the external quantum efficiency of the optoelectronic device.

[0042] For further details, please refer to... Figure 1 The electronic functional layer material also includes a first doped material, which includes a first metallic material selected from copper, silver, and aluminum; and / or,

[0043] The material of the first interface layer 21 further includes a second doped material, which includes a second metallic material selected from copper, silver, and aluminum; and / or,

[0044] The material of the first interface layer 22 also includes a third doped material, which includes a third metallic material selected from copper, silver, aluminum, and / or.

[0045] In this embodiment, metal doping reduces the contact angle between the film containing P-type or N-type semiconductor materials and water, improving the hydrophilicity of the film and thus extending the lifespan of the optoelectronic device. Because metals such as copper, silver, and aluminum have high electronegativity and good conductivity, films containing these metals can effectively improve electron transport efficiency. When copper is selected, its conductivity is even better, resulting in a higher external quantum efficiency for the optoelectronic device.

[0046] Furthermore, the mass ratio of the first doped material to the first core-shell material is (3-6):10; and / or,

[0047] The mass ratio of the second doped material to the second core-shell material is (3-6):10; and / or,

[0048] The mass ratio of the third doped material to the third core-shell material is (3-6):10.

[0049] In this embodiment, the ratio of the doped material (including the first to third doped materials) to its corresponding core-shell material (including the first to third core-shell materials) ensures that the film containing the above materials can have high electron / hole transport efficiency while possessing sufficient superhydrophilicity, thereby improving the external quantum efficiency and lifespan of the optoelectronic device. It should be understood that the mass ratio of the first doped material to the first core-shell material can be any value of 3:10, 4:10, 5:10, 6:10, or any range formed by any two of these values; the mass ratio of the second doped material to the second core-shell material can be any value of 3:10, 4:10, 5:10, 6:10, or any range formed by any two of these values; and the mass ratio of the third doped material to the third core-shell material can be any value of 3:10, 4:10, 5:10, 6:10, or any range formed by any two of these values.

[0050] Furthermore, the average particle size of the first p-type semiconductor material ranges from 3 nm to 10 nm; and / or,

[0051] The average particle size range of the first P-type semiconductor material is 3 nm to 10 nm; and / or,

[0052] The average particle size range of the first type N semiconductor material is 3 nm to 10 nm; and / or,

[0053] The average particle size range of the second type N semiconductor material is 3 nm to 10 nm.

[0054] In this embodiment, the average size of the first N-type semiconductor material and the second N-type semiconductor material ensures their dispersion and stacking in the film layer, avoiding excessively large sizes that would result in low energy levels, thereby improving electron transport efficiency. Similarly, the average particle size of the first P-type semiconductor material can also improve the hole transport efficiency of the film layer in which they are located. It should be understood that the average particle size range of the first P-type semiconductor material can be any value or any two values ​​of 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, and 10nm; the average particle size range of the first P-type semiconductor material can be any value or any two values ​​of 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, and 10nm; the average particle size range of the first N-type semiconductor material can be any value or any two values ​​of 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, and 10nm; and the average particle size range of the second N-type semiconductor material can be any value or any two values ​​of 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, and 10nm.

[0055] The methods for measuring the average particle size mentioned above include scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray diffraction line-width method (XRD), small-angle X-ray scattering (SAXS), dynamic light scattering (DLS), resistance method, Coulter counting method, Stokes sedimentation method, adsorption method, etc.

[0056] For example, taking non-metallic single-mass quantum dot materials as an example, when measuring the average particle size using transmission electron microscopy (TEM), a Hitachi H-600 TEM can be used to observe and characterize the morphology of nanoparticles and determine their size. Specifically, the non-metallic single-mass quantum dot material nanoparticles are made into a suspension and dropped onto a copper grid with a carbon support film. After the carrier liquid (e.g., ethanol) evaporates, the sample is placed on the sample stage. Representative groups of nanoparticles (A, B, and C) are selected from the non-metallic single-mass quantum dot material, and high-magnification TEM images are taken. Fifty nanoparticles are randomly selected from each image to measure their size, and the average particle size is calculated using the following formula.

[0057] Here, n is set to 50.

[0058] If the average particle size of quantum dots is measured using the X-ray diffraction line width method, a D / max-rB type rotating anode target polycrystalline X-ray diffractometer is used to determine the crystal structure and average particle size of non-metallic single-mass quantum dot material nanoparticles. The average particle size of the nanoparticles is then calculated using the crystallite size calculation formula, as follows:

[0059] Where λ is the wavelength of the X-rays (Cu target), which is equal to 0.154059 nm; β is the broadening at the half-peak intensity of the diffraction line due to grain refinement, which is equal to the difference between B and B0, where B is the measured half-peak width and B0 is the instrumental broadening (obtained by measuring particle sizes less than 1 micrometer). In the above measurements, four low-angle (2θ ≤ 50°) X-ray diffraction lines were selected to calculate the average particle size D1 of the nanoparticles.

[0060] Furthermore, the materials for the first carbon material include carbon nanotubes, carbon fibers, and C. 60 And / or,

[0061] The second type of carbon material includes carbon nanotubes, carbon fibers, and C. 60 And / or,

[0062] The third type of carbon material includes carbon nanotubes, carbon fibers, and C. 60 And / or,

[0063] The first porous metal oxide material is selected from one or more of a first inorganic material and a second inorganic material; the first inorganic material includes one or more of nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; the second inorganic material includes one or more doped first compounds, the main compound of which includes nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped first compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals; and / or,

[0064] The second porous metal oxide material is selected from one or more of a third inorganic material and a fourth inorganic material; the third inorganic material includes one or more of an undoped first metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, a group IB-IIIA-VIA semiconductor material, ZrSiO4, BaTiO3, BaZrO3, and Si3N4; the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS; the group IIIA-VA semiconductor material is selected from one or more of InP and GaP; and the group IB-IIIA-VIA semiconductor material is selected from CuInS. And one or more of CuGaS; the fourth inorganic material includes one or more doped second compounds, the general formula of which is A(1-x)MxO, wherein 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y; optionally, the doped second compound is selected from at least one of Zn(1-x)MgxO, Zn(1-x)CaxO, Zn(1-x)ZrxO, Zn(1-x)GaxO, Zn(1-x)AlxO, Zn(1-x)LixO, Al(1-x)ZnxO, Zn(1-x)TixO, Zn(1-x)YxO, In(1-x)SnxO and Ti(1-x)LixO; and / or,

[0065] The third porous metal oxide material is selected from one or more of the third inorganic material and the fourth inorganic material; the third inorganic material includes one or more of the undoped first metal oxide, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, IB-IIIA-VIA group semiconductor materials, ZrSiO4, BaTiO3, BaZrO3, and Si3N4; the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; the IIB-VIA group semiconductor material is selected from one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material is selected from one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material is selected from CuIn. S and CuGaS are selected from one or more of them; the fourth inorganic material includes one or more doped second compounds, the general formula of which is A(1-x)MxO, wherein 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y respectively; optionally, the doped second compound is selected from at least one of Zn(1-x)MgxO, Zn(1-x)CaxO, Zn(1-x)ZrxO, Zn(1-x)GaxO, Zn(1-x)AlxO, Zn(1-x)LixO, Al(1-x)ZnxO, Zn(1-x)TixO, Zn(1-x)YxO, In(1-x)SnxO and Ti(1-x)LixO.

[0066] The first P-type semiconductor material includes a first porous metal oxide material, the first porous metal oxide material having a porosity of 30% to 80% and a pore size of 1 nm to 8 nm; and / or

[0067] The first N-type semiconductor material includes a second porous metal oxide material, the second porous metal oxide material having a porosity of 30% to 80% and a pore size of 1 nm to 8 nm; and / or,

[0068] The second N-type semiconductor material includes a third porous metal oxide material, the porosity of which is 30% to 80%, and the pore size of which is 1 nm to 8 nm.

[0069] In this embodiment, because the first N-type semiconductor material and the second N-type semiconductor material in the embodiment have high electron mobility, the film containing the above materials can maintain high electron transport efficiency while being superhydrophilic. Similarly, the first P-type semiconductor material has high hole transport efficiency, so it can maintain high hole transport efficiency while ensuring that the film containing the above materials is superhydrophilic.

[0070] When the first P-type semiconductor material, the first N-type semiconductor material, and the second N-type semiconductor material respectively comprise a first porous metal oxide, a second porous metal oxide, and a third porous metal oxide, the porosity and pore size of the first porous metal oxide, the second porous metal oxide, and the third porous metal oxide will affect their conductivity and hydrophilicity. When the porosity of the first porous metal oxide, the second porous metal oxide, and the third porous metal oxide are independently selected from 30% to 80%, and the pore size is independently selected from 1 nm to 8 nm, the electronic functional layer, the first interface layer, and the second interface layer have high conductivity and hydrophilicity.

[0071] It should be understood that the porosity of the first porous metal oxide material can be any value or any two of 30%, 40%, 50%, 60%, 70%, and 80%, and the pore size can be any value or any two of 1nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, and 8nm. Similarly, the porosity of the second porous metal oxide material can be any value or any two of 30%, 40%, 50%, 60%, 70%, and 80%, and the pore size can be any value or any two of 1nm, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, and 8nm. The porosity of the third porous metal oxide material can be any value or any two of 30%, 40%, 50%, 60%, 70%, and 80%, and the pore size can be any value or any two of 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, and 8nm.

[0072] It should be understood that the porosity measurement method employs nuclear magnetic resonance nanopore analysis, which utilizes nuclear magnetic resonance technology to test the phase transition process of liquids within pores and characterizes the pore size distribution of porous materials using the Gibbs-Thomson equation. The pore size is measured using transmission electron microscopy.

[0073] During the experiment on optoelectronic device 10, when XPS (X-ray Photoelectron Spectroscopy) was used to test the optoelectronic device 10, it was found that the full width at half maximum (FWHM) of the Ag 3d peak located at the ZnMgO / Ag interface was larger than that of elemental Ag (approximately 1 eV), indicating that the Ag at the ZnMgO / Ag interface was in an oxidized state. The atomic concentration of silver first increased and then decreased, while the atomic concentrations of oxygen, zinc, and carbon also first increased and then decreased with etching cycles, and the atomic concentration of silver decreased as the atomic concentration increased. That is, the surface cathode was oxidized, which led to a decrease in the Ag concentration and an increase in the concentrations of oxygen and other elements. In other words, when the electronic functional layer includes metal oxides, the electrodes in contact with the electronic functional layer are easily oxidized by the oxygen active sites in the metal oxides to form electrode oxides, which in turn leads to a decrease in the electron injection efficiency of optoelectronic device 10.

[0074] To further address the above issues, please refer to [the relevant documentation / reference]. Figures 1 to 3 The electronic functional layer includes an electron injection layer, and the material of the electron injection layer includes MXenes material, which is selected from at least one of two-dimensional transition metal carbides, two-dimensional transition metal nitrides and two-dimensional transition metal carbonitrides.

[0075] The two-dimensional transition metal in the two-dimensional transition metal carbide, two-dimensional transition metal nitride and two-dimensional transition metal carbonitride is selected from at least one of titanium, vanadium, niobium and molybdenum.

[0076] In this embodiment, the general structural formula of MXenes material is ABTx;

[0077] Where A includes transition metals, B includes carbon or nitrogen, T is a functional group, and x is the number of Ts in a single electron-injected layer 700 material.

[0078] In this embodiment, one aspect is that the work function of the MXene material can be tuned, allowing it to act as a transition layer to lower the electron injection barrier and improve the efficiency and lifetime of the optoelectronic device 10. Typically, the work functions of two-dimensional transition metal carbides and nitrides are concentrated in the range of 4–5 eV, and the work function of MXene materials can be tuned by adjusting the content of terminal functional groups such as -F, -OH, and =O3. Therefore, the electron injection performance of the optoelectronic device 10 can be adjusted by changing the type and number of functional groups T.

[0079] In summary, the electron injection layer 700 of this embodiment can effectively improve the electron injection efficiency and lifespan of the optoelectronic device 10. It is understood that the transition metal includes at least one of Ti, V, and Mm; and / or, the functional group includes at least one of hydroxyl, oxygen, and fluorine groups; and / or, the metal oxide includes at least one of ZnO, TiO2, SnO2, Al2O3, GaO, Ga2O3, ZrO2, NiO, ZnS, ZnSe, CdS, InP, GaP, BaTiO3, Cs2CO3, and Rb2CO3.

[0080] Furthermore, the electron injection layer also includes a fourth doped material, which includes metal nanowires, including at least one of Ag nanowires, Al nanowires, Au nanowires, and Cu nanowires.

[0081] In this embodiment, the MXenes material doped with the fourth doping material has high density due to the presence of metal nanowires, which can isolate water and oxygen. Furthermore, the transition metal carbides and nitrides in this material are chemically stable and do not easily react with the oxygen active sites of the metal oxides in the electron transport layer 600, thereby improving the service life of the optoelectronic device 10.

[0082] Furthermore, the molar ratio of metal nanowires to MXenes materials is (0.2–0.6):1; and / or,

[0083] The materials of the anode 100 and cathode 800 include one or more of metals, carbon materials, and metal oxides. The metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg; the carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or composite electrodes consisting of metal sandwiched between doped or undoped transparent metal oxides. These composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or...

[0084] The active layer includes a light-emitting layer 400. The material of the light-emitting layer 400 includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are respectively selected from at least one of group I-VI compounds, group IV-VI compounds, group II-IV compounds, and group III-VI compounds. Group I-VI compounds include but are not limited to CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, H gSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZn One or more of STe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, and group IV-VI compounds including but not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, II Group IV compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and / or,

[0085] Materials for the hole functional layer include TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, molybdenum oxide, vanadium oxide, titanium oxide, zinc oxide, molybdenum sulfide, tungsten sulfide, zinc sulfide, cadmium sulfide, indium tin, titanium tin, molybdenum tin, zinc tin, doped graphene, undoped graphene, and C. 60 At least one of them.

[0086] In this embodiment, the molar ratio of metal nanowires to MXenes material avoids both insufficient metal nanowires leading to low electron injection efficiency in the electron injection layer and excessive metal nanowires causing material agglomeration, which would affect the lifespan of the optoelectronic device. It is understood that the molar ratio of metal nanowires to the first material can be any value or a range formed by any two of the following: 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1, 0.5:1, 0.55:1, 0.6:1.

[0087] Accordingly, please refer to Figure 4 This application also provides a method for fabricating an optoelectronic device 10, the method comprising:

[0088] Forming an anode;

[0089] An active layer is formed above the anode;

[0090] A cathode is formed above the active layer;

[0091] Prior to the step of forming the active layer above the anode, the following steps are also included:

[0092] A hole-functional layer is formed on the anode;

[0093] A first interface layer solution is provided, which is then deposited on a hole functional layer to form a first interface layer. The material of the first interface layer solution includes a second core-shell material, the core material of the second core-shell material includes a first p-type semiconductor material, and the shell material of the second core-shell material includes a second carbon material; and / or...

[0094] The following steps are included prior to the step of forming the cathode above the active layer:

[0095] An electronic functional layer solution is provided, and the electronic functional layer solution is deposited on an active layer to form an electronic functional layer. The electronic functional layer solution includes a first core-shell material, the core material of which includes a first p-type semiconductor material, and the shell material of which includes a first carbon material; and / or...

[0096] After forming an electronic functional layer on the active layer, the following steps are also included;

[0097] A second interface layer solution is provided to deposit the second interface layer on the electronic functional layer to form the second interface layer. The material of the second interface layer solution includes a third core-shell material. The core material of the third core-shell material includes a second N-type semiconductor material, and the shell material of the third core-shell material includes a third carbon material.

[0098] In this embodiment, because at least one of the aforementioned electronic functional layer, first interface layer, and second interface layer contains a core-shell material (including the first to third core-shell materials) and a carbon material (including the first to third carbon materials), the optoelectronic device has strong conductivity, effectively promoting electron / hole transport. Simultaneously, it prevents water and oxygen from entering the light-emitting layer 400 (active layer), which could lead to hydrolysis or oxidation of the light-emitting layer 400 material, thereby improving the lifespan of the optoelectronic device 10 and its external quantum efficiency. When the optoelectronic device simultaneously includes an electronic functional layer, a first interface layer, and a second interface layer, the flowchart of its fabrication method is as follows: Figure 4 As shown.

[0099] For further details, please refer to... Figure 1 and Figure 4 The electronic functional layer solution further includes a first metallic material, and the preparation steps of the electronic functional layer solution include:

[0100] A first metal precursor and a first organic solvent are provided, and the first metal precursor and the first organic solvent are mixed and stirred to form a first mixed solution;

[0101] A first metal oxide precursor is provided, and the first metal oxide precursor and the first mixed solution are mixed and stirred to form a second mixed solution, wherein the molar ratio of the first metal precursor to the first metal oxide precursor is (0.5~0.8):1;

[0102] The second mixed solution was filtered and dried to obtain the first preform;

[0103] The first preform and the first organic solvent are mixed to obtain an electronic functional layer solution; and / or,

[0104] The first interface layer solution further includes a second metallic material, and the preparation steps of the first interface layer solution include:

[0105] A second metal precursor and a second organic solvent are provided, and the second metal precursor and the second organic solvent are mixed and stirred to form a third mixed solution;

[0106] A second metal oxide precursor is provided, and the second metal oxide precursor and the third mixed solution are mixed and stirred to form a fourth mixed solution, wherein the molar ratio of the second metal precursor to the second metal oxide precursor is (0.5~0.8):1;

[0107] The fourth mixed solution is filtered and dried to obtain the second preform;

[0108] The second preform and the second organic solvent are mixed to obtain a first interface layer solution; and / or,

[0109] The second interface layer solution further includes a third metallic material, and the preparation steps of the second interface layer solution include:

[0110] A third metal precursor and a third organic solvent are provided, and the third metal precursor and the third organic solvent are mixed and stirred to form a fifth mixed solution;

[0111] A third metal oxide precursor is provided, and the third metal oxide precursor and the fifth mixed solution are mixed and stirred to form a sixth mixed solution, wherein the molar ratio of the third metal precursor to the third metal oxide precursor is (0.5~0.8):1;

[0112] The sixth mixed solution was filtered and dried to obtain the third preform;

[0113] The third preform and the third organic solvent are mixed to obtain the second interface layer solution.

[0114] In this embodiment, the molar ratios of the first, second, and third metal precursors to the first, second, and third metal oxide precursors, respectively, can affect the pore size of the porous metal oxide. For example, when the first metal precursor is copper chloride, copper chloride acts as both a metal precursor and an initiator for surface tension differences. Higher copper chloride content results in larger pores in the first porous metal oxide, while lower content results in smaller pores. Therefore, the molar ratio ranges of the first, second, and third metal precursors to the first, second, and third metal oxide precursors, respectively, in this embodiment can prevent the porous metal oxide from having excessively small pores, leading to reduced conductivity of the interface layer, while also preventing excessively large pores from damaging the interface layer surface and causing uneven morphology.

[0115] It is understood that the molar ratio of the aforementioned metal precursor to the porous metal oxide precursor can be any value or a range formed by any two of the following: 0.5:1, 0.55:1, 0.6:1, 0.65:1, 0.7:1, 0.75:1, 0.8:1. The preform can be a porous metal oxide.

[0116] Furthermore, the first metal precursor, the second metal precursor, and the third metal precursor are independently selected from at least one of copper chloride, silver chloride, and aluminum chloride; and / or,

[0117] The first organic solvent, the second organic solvent, and the third organic solvent independently comprise at least one of ethanol, ammonia, dimethyl sulfoxide, and N,N-dimethylformamide; and / or,

[0118] The first metal oxide precursor, the second metal oxide precursor, and the third metal oxide precursor each independently include at least one of nickel chloride hexahydrate and tetrabutyl titanate.

[0119] In this embodiment, the method for preparing metal-filled porous metal oxides in the fabrication method of optoelectronic devices is the solution-gel method, which has a simple preparation process and high production efficiency.

[0120] Furthermore, prior to the final formation of the cathode, the process includes the formation of an electron injection layer, specifically including:

[0121] An electron injection layer solution is provided, and the electron injection layer solution is deposited to form the electron injection layer; wherein the electron injection layer solution includes an MXenes material, and the MXenes material is selected from at least one of two-dimensional transition metal carbides, two-dimensional transition metal nitrides, and two-dimensional transition metal carbonitrides;

[0122] The two-dimensional transition metal in the two-dimensional transition metal carbide, two-dimensional transition metal nitride and two-dimensional transition metal carbonitride is selected from at least one of titanium, vanadium, niobium and molybdenum.

[0123] In this embodiment, since the electron injection layer contains at least one of two-dimensional transition metal carbides, two-dimensional transition metal nitrides and two-dimensional transition metal carbonitrides, the electron injection layer 700 of this embodiment can effectively improve the electron injection efficiency and service life of the optoelectronic device 10.

[0124] Furthermore, the electron injection layer also includes a fourth doped material, which includes metal nanowires. The steps for forming the electron injection layer include:

[0125] Provide MXenes materials;

[0126] Mixing MXenes material with a metal nanowire solution yields an electron injection layer solution;

[0127] Deposit the electron injection layer solution to form the electron injection layer;

[0128] In the electron injection layer solution, the molar ratio of metal nanowires to MXenes material is (0.2–0.6):1.

[0129] In this embodiment, the molar ratio of metal nanowires to MXenes material avoids both insufficient metal nanowires leading to low electron injection efficiency in the electron injection layer and excessive metal nanowires causing material agglomeration, which would affect the lifespan of the optoelectronic device. It is understood that the molar ratio of metal nanowires to the first material can be any value or a range formed by any two of the following: 0.2:1, 0.25:1, 0.3:1, 0.35:1, 0.4:1, 0.45:1, 0.5:1, 0.55:1, 0.6:1.

[0130] Accordingly, this application also provides a display device, which includes an optoelectronic device of any of the above embodiments or the optoelectronic device in the display device is prepared by the preparation method of the optoelectronic device of any of the above embodiments.

[0131] In this embodiment, since the display device includes the optoelectronic device of any of the above embodiments or the optoelectronic device in the display device is prepared by the preparation method of the optoelectronic device of any of the above embodiments, the display device has high external quantum efficiency and long service life.

[0132] The present application will be specifically described below through specific embodiments. The following embodiments are only some embodiments of the present application and are not intended to limit the present application.

[0133] Example 1

[0134] This application provides a method for fabricating an optoelectronic device, the method of which is as follows:

[0135] Step 1: Prepare the interface layer solution. Weigh 28 mg of salicylic acid and 8 mg of copper chloride into beaker A, then add 230 ml of ethanol and stir for one hour until fully dissolved. Separately, weigh 34 ml of tetrabutyl titanate into beaker B, add 28 ml of acetylacetone and stir until homogeneous. Then, drop the mixture from beaker A into beaker B and stir for 2 hours. Achieve the diluted gel solution at 20°C and 40% RH. Filter and dry to obtain the corresponding Cu-C@TiO2 material. Then, prepare a 3 mg / ml interface layer solution of Cu-C@TiO2 (where the molar ratio of copper chloride to tetrabutyl titanate is 1:0.6).

[0136] Step 2: Provide the electron injection layer solution. Dissolve 1.5g LiF in 20ml hydrochloric acid (6mol / L) as the etching solution. Then add 0.5g Ti3AlC2 powder to the etching solution, stir at 40℃ for 48h, and wash to obtain Ti3C2Tx powder. Then take 0.25g of powder and add it to 100ml deionized water, sonicate at 40℃ for 1h, and centrifuge at 3500rpm / min to obtain a few-layer Ti3C2Tx nanosheet colloidal solution of 1.5mg / ml. Then mix 1.5mg / ml of Ti3C2Tx in 30ml and Ag nanowire solution in 1mg / ml in 20ml, and stir for 10min to obtain the Ti3C2Tx / Ag nanowire electron injection layer solution. The molar ratio of Ti3C2Tx nanosheet colloid to Ag nanowire in the electron injection layer solution is 40% (wherein the T functional group usually has multiple forms in the actual production process, that is, the oxygen, hydroxyl and fluorine groups are mixed, so no specific limitation is made).

[0137] Step 3, Anode preparation. A substrate with ITO glass is provided. The ITO glass is cleaned and further organic contaminants on the surface of the ITO glass are removed using an ultraviolet ozone cleaner to improve the wettability of the ITO surface. Then the preform is placed on a 230°C hot plate for drying to form a 50nm thick anode.

[0138] Step 4, prepare the hole transport layer. Provide a hole transport layer solution and use the hole transport layer solution to form a hole transport layer liquid film on the above anode. Transfer the substrate to a VCD device (high vacuum circulating dryer) for drying, and then place the substrate on a 230°C hot stage for annealing for 30 minutes to form a 50nm thick hole transport layer. The material of the hole transport layer is TFB.

[0139] Step 5, Prepare the light-emitting layer. Coat the light-emitting layer solution onto the hole transport layer described above, transfer the substrate to a VCD device for drying, and then anneal it for 10 minutes using a 100°C hot stage to form a 30nm thick light-emitting layer;

[0140] Step 6: Print 3 drops of the interface layer solution prepared in Step 1 onto the light-emitting layer by inkjet printing, and then anneal the layer at 500°C for 2 hours under vacuum to obtain a second interface layer of 6 nm.

[0141] Step 7: Prepare the electron transport layer. An electron transport layer liquid film is formed on the aforementioned light-emitting layer. The substrate is transferred to a VCD device (high vacuum circulating drying equipment) for drying, and then placed on a 230°C hot stage for annealing for 30 minutes to form a 50nm thick zinc oxide electron transport layer.

[0142] Step 8: Prepare the electron injection layer. Print the electron injection layer solution obtained in Step 2 onto the electron transport layer to form a 5 nm thick electron injection layer film.

[0143] Step 9, Cathode fabrication. The substrate is transferred to a vacuum evaporation machine, and Al is evaporated onto the optoelectronic device to form a 70 nm thick aluminum cathode.

[0144] Example 2

[0145] This embodiment is basically the same as Embodiment 1, except that step 1 is replaced by: weighing 28 mg of salicylic acid and 8.6 mg of silver chloride into beaker A, then adding 230 ml of ethanol and stirring for one hour until fully dissolved; separately, weighing 34 ml of tetrabutyl titanate into beaker B, adding 28 ml of acetylacetone and stirring evenly, then adding beaker A dropwise into beaker B, stirring for 2 hours, and aging the dilute gel solution at 20°C and 40% RH. The Ag-C@TiO2 material is obtained by filtration and drying, and then prepared into a 3 mg / ml interfacial layer solution.

[0146] Example 3

[0147] This embodiment is basically the same as Embodiment 1, except that step 1 is replaced by: weighing 28 mg of salicylic acid and 8.6 mg of silver chloride into beaker A, then adding 230 ml of ethanol and stirring for one hour until fully dissolved; separately, weighing 18 ml of zinc acetate solution into beaker B, adding 28 ml of acetylacetone and stirring evenly, then adding beaker A dropwise into beaker B, stirring for 2 hours, and aging the dilute gel solution at 20°C and 40% RH. The solution is then filtered and dried to obtain Ag-C@ZnO2, which is then prepared into a 3 mg / ml interfacial layer solution.

[0148] Example 3

[0149] This embodiment is basically the same as Embodiment 1, except that the material of the final interface layer solution prepared in step 1 is Cu-N@TiO2.

[0150] Example 4

[0151] This embodiment is basically the same as Embodiment 1, except that: 8mg of copper chloride in step 1 is replaced with 10mg of copper chloride, and the molar ratio of copper chloride to tetrabutyl titanate is 1:0.8.

[0152] Example 5

[0153] This embodiment is basically the same as Embodiment 1, except that: 8 mg of copper chloride in step 1 is replaced with 5.2 mg of copper chloride, and the molar ratio of copper chloride to tetrabutyl titanate is 1:0.4.

[0154] Example 6

[0155] This embodiment is basically the same as embodiment 1, except that steps 1 and 6 are omitted.

[0156] Before step 5, the following steps are also included: providing a first interface layer solution, the material of the first interface layer solution being C@NiO, inkjet printing 3 drops of the first interface layer solution onto the hole transport layer, and laser annealing the film at 500°C for 2 hours under vacuum to obtain a 6nm first interface layer.

[0157] Example 7

[0158] This embodiment is basically the same as Embodiment 1, except that: step 6 is retained, and a new step is added between step 4 and step 5:

[0159] A first interface layer solution is provided, the material of the first interface layer solution is C@NiO, and three drops of the first interface layer solution are inkjet printed onto the hole transport layer. The layer film is then laser annealed at 500°C for 2 hours under vacuum to obtain a 6nm first interface layer.

[0160] At this point, both the hole transport layer and the electron transport layer of the optoelectronic device have an interface layer between them and the light-emitting layer.

[0161] Example 8

[0162] This embodiment is basically the same as embodiment 7, except that: copper chloride in step 1 is omitted, and the material of the interface layer solution formed in step 1 is Cu-TiO2, and the material of the second interface layer formed in step 6 is Cu-TiO2.

[0163] Example 9

[0164] This embodiment is basically the same as Embodiment 1, except that: firstly, in step 1, the interface layer solution and the electron transport layer material (zinc oxide) are mixed to form an electron transport layer solution; then, step 5 is omitted, and in step 7, the above electron transport layer solution is used to prepare an electron transport layer, in which case the electron transport layer includes Cu-C@TiO2.

[0165] Example 10

[0166] This embodiment is basically the same as Embodiment 1, except that: First, in step 1, the interface layer solution is replaced with a mixture of Cu-C@NiO and zinc oxide, the hole transport layer material, to form a hole transport layer solution; then, step 6 is omitted, and in step 4, the hole transport layer is prepared using the above hole transport layer solution, at which time the hole transport layer includes Cu-C@NiO.

[0167] Example 11

[0168] This embodiment is basically the same as Embodiment 1, except that the Ag nanowires in step 2 are replaced with AI nanowires, and the Ti3C2Tx / Ai nanowire electron injection layer solution is finally prepared.

[0169] Example 12

[0170] This embodiment is basically the same as Embodiment 1, except that Ti in step 2 is replaced with V, and a V3C2Tx / Ag nanowire electron injection layer solution is finally prepared.

[0171] Example 13

[0172] This embodiment is basically the same as Example 1, except that Ti3N2Tx / Ag nanowires are finally prepared in step 2.

[0173] Example 14

[0174] This embodiment is basically the same as Embodiment 1, except that the molar ratio of Ti3C2Tx nanosheet colloid to Ag nanowire in the electron injection layer solution formed in step 2 is 0.6:1.

[0175] Example 15

[0176] This embodiment is basically the same as Embodiment 1, except that the molar ratio of Ti3C2Tx nanosheet colloid to Ag nanowire in the electron injection layer solution formed in step 2 is 0.2:1.

[0177] Example 16

[0178] This embodiment is basically the same as Embodiment 1, except that steps 1, 2 and 6 are omitted; and the material of the electron injection layer solution in step 8 is replaced with LiF (a commonly used electron injection layer material).

[0179] Replace the material of the hole transport layer solution in step 4 with C@NiO.

[0180] Example 17

[0181] This embodiment is basically the same as Embodiment 1, except that steps 1, 2 and 6 are omitted; and the material of the electron injection layer solution in step 8 is replaced with LiF (a commonly used electron injection layer material).

[0182] Replace the material of the electron transport layer solution in step 7 with C@TiO2.

[0183] Example 18

[0184] This embodiment is basically the same as Embodiment 1, except that steps 1, 2 and 6 are omitted; and the material of the electron injection layer solution in step 8 is replaced with LiF (a commonly used electron injection layer material).

[0185] A new step is added between steps 4 and 5: a first interface layer solution is provided, the material of the first interface layer solution is C@NiO, 3 drops of the first interface layer solution are inkjet printed onto the hole transport layer, and the film is laser annealed at 500°C for 2 hours under vacuum to obtain a 6nm first interface layer.

[0186] Example 19

[0187] This embodiment is basically the same as Embodiment 1, except that step 2 is omitted; and the material of the electron injection layer solution in step 8 is replaced with LiF (a commonly used electron injection layer material).

[0188] Example 20

[0189] This embodiment is basically the same as Embodiment 1, except that: step 2 is omitted; and the material of the electron injection layer solution in step 8 is replaced with LiF (a commonly used electron injection layer material).

[0190] A new step is added between steps 4 and 5: a first interface layer solution is provided, the material of the first interface layer solution is C@NiO, 3 drops of the first interface layer solution are inkjet printed onto the hole transport layer, and the film is laser annealed at 500°C for 2 hours under vacuum to obtain a 6nm first interface layer.

[0191] Example 21

[0192] This embodiment is basically the same as embodiment 16, except that: a new step is added between step 4 and step 5: a first interface layer solution is provided, the material of the first interface layer solution is C@NiO, 3 drops of the first interface layer solution are inkjet printed on the hole transport layer, and the film is laser annealed at 500°C for 2 hours under vacuum to obtain a 6nm first interface layer.

[0193] Example 22

[0194] This embodiment is basically the same as embodiment 17, except that steps 1 and 6 are retained.

[0195] Example 23

[0196] This embodiment is basically the same as embodiment 16, except that steps 1 and 6 are retained.

[0197] Example 24

[0198] This embodiment is basically the same as embodiment 17, except that: a new step is added between step 4 and step 5: a first interface layer solution is provided, the material of the first interface layer solution is C@NiO, 3 drops of the first interface layer solution are inkjet printed on the hole transport layer, and the film is laser annealed at 500°C for 2 hours under vacuum to obtain a 6nm first interface layer.

[0199] Example 25

[0200] This embodiment is basically the same as Embodiment 20, except that the material of the hole transport layer solution in step 4 is replaced with C@NiO, and the material of the electron transport layer solution in step 7 is replaced with C@TiO2.

[0201] Example 26

[0202] This comparative example is basically the same as Example 1, except that steps 2 and 6 are omitted. In the final optoelectronic device, an interface layer is provided between the light-emitting layer and the electron transport layer. The material of the interface layer is Cu-C@TiO2.

[0203] Comparative Example 1

[0204] This comparative example is basically the same as Example 1, except that steps 1, 2 and 6 are omitted; and the material of the electron injection layer solution in step 8 is replaced with LiF (a commonly used electron injection layer material).

[0205] Comparative Example 2

[0206] This comparative example is basically the same as Example 1, except that steps 1, 2, 6, and 8 are omitted.

[0207] The optoelectronic device performance of Examples 1 to 26 and Comparative Examples 1 to 2 was tested using IVL equipment. The external quantum efficiency at a brightness of 1000 cd / m2 was used as the external quantum efficiency index, and the brightness of the optoelectronic device under a voltage of 4V was used as the luminous intensity evaluation index. The test results are shown in Table 1.

[0208] Table 1:

[0209]

[0210]

[0211] As shown in Table 1:

[0212] As can be seen from Comparative Examples 1 and 26, when a second interface layer is added between the electron transport layer and the light emission layer, and the second interface layer includes a porous metal oxide filled with metal and encapsulated in carbon, the external quantum efficiency and lifespan of the optoelectronic device are significantly improved. This proves that the second interface layer can prevent water and oxygen from entering the optoelectronic device and improve the electron transport efficiency.

[0213] As shown in Examples 1, 20, 26, and Comparative Examples 1 and 2, adding an electron injection layer between the electron transport layer and the cathode can improve the external quantum efficiency and lifespan of optoelectronic devices. Furthermore, when the electron injection layer is made of materials such as Ti3C2Tx / Ag nanowires, it can effectively improve the electron injection efficiency and prevent cathode oxidation caused by contact between the electron transport layer and the cathode, thereby improving the external quantum efficiency and lifespan of the optoelectronic device.

[0214] As can be seen from Examples 1-3 and Comparative Examples 1-2, the material of the second interface layer can be of various types. With different materials of the second interface layer, the external quantum transmission efficiency and lifespan of the optoelectronic device are also different. Furthermore, when the optoelectronic device has a second interface layer between the electron transport layer and the light emission layer, and an electron injection layer made of Ti3C2Tx / Ag nanowires is also provided, the external quantum efficiency and lifespan of the optoelectronic device are further improved.

[0215] As can be seen from Examples 1, 4 and 5, when preparing a second interface layer solution containing a porous metal oxide filled with metal, an excessively high ratio of metal precursor to porous metal oxide precursor will lead to a decrease in the lifespan of optoelectronic devices, while an excessively low ratio will lead to a decrease in external quantum transmission efficiency.

[0216] As can be seen from Comparative Examples 1-2 and Examples 6-7, setting a processing layer between the hole transport layer and the light-emitting layer can also improve the external quantum efficiency and lifespan of optoelectronic devices. At the same time, when processing layers are set between both the hole transport layer and the electron transport layer of the optoelectronic device and the light-emitting layer, the lifespan and external quantum efficiency of the optoelectronic device are significantly improved.

[0217] As can be seen from Examples 1 and 8, when carbon is used to encapsulate porous metal oxides, the lifespan of optoelectronic devices is significantly improved. This proves that carbon-encapsulated porous metal oxides can prevent the second interface layer from shrinking and causing cracks, thereby improving the morphological uniformity of the second interface layer and further improving the external quantum efficiency and lifespan of optoelectronic devices.

[0218] As can be seen from Examples 1, 9 and 10, when a porous metal oxide filled with metal is doped into the electron transport layer or hole transport layer, the electron transport layer or hole injection layer itself is regarded as a second interface layer, which can also isolate water and oxygen, and improve the external quantum transport efficiency and service life of optoelectronic devices.

[0219] According to Comparative Examples 1-2 and Examples 1 and 11-13, when the electron injection layer material includes MXenes material, the optoelectronic device can effectively avoid cathode oxidation caused by contact between the electron transport layer and the cathode, and improve the electron transport rate, thereby improving the external quantum efficiency and lifespan of the optoelectronic device.

[0220] As can be seen from Examples 1 and 14-15, the molar ratio of metal nanowires to the fourth doped material can avoid the low electron injection efficiency of the electron injection layer due to too few metal nanowires, while avoiding the agglomeration of materials due to too many metal nanowires, which would affect the service life of optoelectronic devices.

[0221] As can be seen from Comparative Example 1 and Examples 16-17, when an optoelectronic device contains a hole transport layer composed of carbon material and P-type semiconductor material, its external quantum efficiency and lifetime are both improved; similarly, when an optoelectronic device contains an electron transport layer composed of carbon material and N-type semiconductor material, its external quantum efficiency and lifetime are both improved.

[0222] As can be seen from Comparative Example 1 and Examples 18-19, the first interface layer containing carbon material and P-type semiconductor material can effectively isolate water and oxygen, thereby improving the external quantum efficiency and lifespan of optoelectronic devices; similarly, the second interface layer containing carbon material and N-type semiconductor material can also effectively isolate water and oxygen, thereby improving the external quantum efficiency and lifespan of optoelectronic devices.

[0223] According to Comparative Examples 1 and Examples 16-25, as long as the optoelectronic device contains at least one of the above four types of film layers, including a first interface layer containing carbon material and P-type semiconductor material, a hole transport layer, a second interface layer containing carbon material and N-type semiconductor material, and an electron transport layer, the external quantum efficiency and lifespan of the optoelectronic device can be improved. At the same time, the above four types of film layers can be arbitrarily arranged and combined in the optoelectronic device.

[0224] The optoelectronic devices, fabrication methods, and display devices provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An optoelectronic device, characterized in that, The optoelectronic device includes a stacked anode, a hole functional layer, an active layer, an electronic functional layer, and a cathode. The electronic functional layer is made of a first core-shell material, the core material of which includes a first N-type semiconductor material, and the shell material of which includes a first carbon material; and / or... A first interface layer is provided between the active layer and the hole-functional layer. The material of the first interface layer includes a second core-shell material. The core material of the second core-shell material includes a first p-type semiconductor material, and the shell material of the second core-shell material includes a second carbon material; and / or... A second interface layer is provided between the active layer and the electronic functional layer. The material of the second interface layer includes a third core-shell material. The core material of the third core-shell material includes a second N-type semiconductor material, and the shell material of the third core-shell material includes a third carbon material.

2. The optoelectronic device according to claim 1, characterized in that, The material of the electronic functional layer further includes a first doped material, which comprises a first metallic material having an electronegativity greater than 1.61; and / or, The material of the first interface layer further includes a second doped material, the second doped material comprising a second metallic material having an electronegativity greater than 1.61; and / or, The material of the second interface layer further includes a third doped material, which includes a third metal material with an electronegativity greater than 1.

61.

3. The optoelectronic device according to claim 2, characterized in that, The first metallic material is selected from copper, silver, aluminum; and / or, The second metallic material is selected from copper, silver, aluminum; and / or, The third metallic material is selected from copper, silver, aluminum; and / or, The mass ratio of the first doped material to the first core-shell material is (3-6):10; and / or, The mass ratio of the second doped material to the second core-shell material is (3-6):10; and / or, The mass ratio of the third doped material to the third core-shell material is (3-6):

10. 。 4. The optoelectronic device according to claim 1, characterized in that, The average particle size range of the first P-type semiconductor material is 3 nm to 10 nm; and / or, The average particle size range of the first N-type semiconductor material is 3 nm to 10 nm; and / or, The average particle size range of the second N-type semiconductor material is 3 nm to 10 nm.

5. The optoelectronic device according to claim 1, characterized in that, The first carbon material includes carbon nanotubes, carbon fibers, and C. 60 And / or, The second carbon material includes carbon nanotubes, carbon fibers, and C. 60 And / or, The third carbon material includes carbon nanotubes, carbon fibers, and C. 60 And / or, The first P-type semiconductor material includes a first porous metal oxide material, the first porous metal oxide material having a porosity of 30% to 80% and an average pore size of 1 nm to 8 nm; and / or, The first N-type semiconductor material includes a second porous metal oxide material, the second porous metal oxide material having a porosity of 30% to 80% and an average pore size of 1 nm to 8 nm; and / or, The second N-type semiconductor material includes a third porous metal oxide material, the third porous metal oxide material having a porosity of 30% to 80% and an average pore size of 1 nm to 8 nm.

6. The optoelectronic device according to claim 5, characterized in that, The first porous metal oxide material is selected from one or more of a first inorganic material and a second inorganic material; the first inorganic material includes one or more of nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; the second inorganic material includes one or more doped first compounds, the main compound of which includes nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped first compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals; and / or, The second porous metal oxide material is selected from one or more of a third inorganic material and a fourth inorganic material; the third inorganic material includes one or more of an undoped first metal oxide, a group IIB-VIA semiconductor material, a group IIIA-VA semiconductor material, a group IB-IIIA-VIA semiconductor material, ZrSiO4, BaTiO3, BaZrO3, and Si3N4; the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; the group IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS; the group IIIA-VA semiconductor material is selected from one or more of InP and GaP; and the group IB-IIIA-VIA semiconductor material is selected from CuInS. And one or more of CuGaS; the fourth inorganic material includes one or more doped second compounds, the general formula of which is A(1-x)MxO, wherein 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y; optionally, the doped second compound is selected from at least one of Zn(1-x)MgxO, Zn(1-x)CaxO, Zn(1-x)ZrxO, Zn(1-x)GaxO, Zn(1-x)AlxO, Zn(1-x)LixO, Al(1-x)ZnxO, Zn(1-x)TixO, Zn(1-x)YxO, In(1-x)SnxO and Ti(1-x)LixO; and / or, The third porous metal oxide material is selected from one or more of the third inorganic material and the fourth inorganic material; the third inorganic material includes one or more of the undoped first metal oxide, IIB-VIA group semiconductor materials, IIIA-VA group semiconductor materials, IB-IIIA-VIA group semiconductor materials, ZrSiO4, BaTiO3, BaZrO3, and Si3N4; the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; the IIB-VIA group semiconductor material is selected from one or more of ZnS, ZnSe, and CdS; the IIIA-VA group semiconductor material is selected from one or more of InP and GaP; and the IB-IIIA-VIA group semiconductor material is selected from CuIn. S and CuGaS are selected from one or more of them; the fourth inorganic material includes one or more doped second compounds, the general formula of which is A(1-x)MxO, wherein 0 < x ≤ 0.5, A and M are not the same, and A and M are independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In and Y respectively; optionally, the doped second compound is selected from at least one of Zn(1-x)MgxO, Zn(1-x)CaxO, Zn(1-x)ZrxO, Zn(1-x)GaxO, Zn(1-x)AlxO, Zn(1-x)LixO, Al(1-x)ZnxO, Zn(1-x)TixO, Zn(1-x)YxO, In(1-x)SnxO and Ti(1-x)LixO.

7. The optoelectronic device according to claim 1, characterized in that, The electronic functional layer includes an electron injection layer, and the material of the electron injection layer includes MXenes material, wherein the MXenes material is selected from at least one of two-dimensional transition metal carbides, two-dimensional transition metal nitrides and two-dimensional transition metal carbonitrides; Wherein, the two-dimensional transition metal in the two-dimensional transition metal carbide, two-dimensional transition metal nitride and two-dimensional transition metal carbonitride is selected from at least one of titanium, vanadium, niobium and molybdenum.

8. The optoelectronic device according to claim 7, characterized in that, The electron injection layer also includes a fourth doping material, which includes metal nanowires, specifically at least one of Ag nanowires, Al nanowires, Au nanowires, and Cu nanowires.

9. The optoelectronic device according to claim 8, characterized in that, The molar ratio of the metal nanowires to the MXenes material is (0.2–0.6):1; and / or, The materials of the anode and the cathode include one or more of metals, carbon materials, and metal oxides. The metals include one or more of Al, Ag, Cu, Mo, Au, Ba, Ca, Yb, and Mg. The carbon materials include one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include doped or undoped metal oxides, including one or more of ITO, FTO, ATO, AZO, GZO, IZO, MZO, and AMO, or composite electrodes consisting of metal sandwiched between doped or undoped transparent metal oxides. These composite electrodes include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2; and / or... The active layer includes a light-emitting layer, the material of which includes at least one of single-structure quantum dots and core-shell structure quantum dots. The material of the single-structure quantum dots, the core material of the core-shell structure quantum dots, and the shell material of the core-shell structure quantum dots are respectively selected from at least one of group II-VI compounds, group IV-VI compounds, group III-V compounds, and group I-III-VI compounds. Among these, group II-VI compounds include, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, and CdZnSe. One or more of CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, and group IV-VI compounds including but not limited to one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, II Group IV compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; and / or, The materials of the hole functional layer include TFB, CuPc, PVK, Poly-TPD, PFB, DNTPD, TCATA, TCCA, CBP, TPD, NPB, NPD, PEDOT:PSS, T·APC, MCC, F4-TCNQ, HATCN, 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, polyaniline, molybdenum oxide, vanadium oxide, titanium oxide, zinc oxide, molybdenum sulfide, tungsten sulfide, zinc sulfide, cadmium sulfide, indium tin, titanium tin, molybdenum tin, zinc tin, doped graphene, undoped graphene, and C. 60 At least one of them.

10. A method for fabricating an optoelectronic device, characterized in that, The method includes: Provide anode; An active layer is formed on the anode; A cathode is formed on the active layer; Prior to the step of forming the active layer above the anode, the method further includes the following steps: A hole-functional layer is formed on the anode; A first interface layer solution is provided, which is deposited on the hole functional layer to form a first interface layer. The material of the first interface layer solution includes a second core-shell material, the core material of the second core-shell material includes a first p-type semiconductor material, and the shell material of the second core-shell material includes a second carbon material; and / or, Prior to the step of forming a cathode over the active layer, the following steps are also included: An electronic functional layer solution is provided, and the electronic functional layer solution is deposited on the active layer to form an electronic functional layer. The electronic functional layer solution includes a first core-shell material, the core material of which includes a first p-type semiconductor material, and the shell material of which includes a first carbon material; and / or... After forming the electronic functional layer on the active layer, the following steps are also included: A second interface layer solution is provided to deposit the second interface layer on the electronic functional layer to form a second interface layer. The material of the second interface layer solution includes a third core-shell material. The core material of the third core-shell material includes a second N-type semiconductor material, and the shell material of the third core-shell material includes a third carbon material.

11. The method for fabricating the optoelectronic device according to claim 10, characterized in that, The electronic functional layer solution further includes a first metallic material, and the preparation steps of the electronic functional layer solution include: A first metal precursor and a first organic solvent are provided, and the first metal precursor and the first organic solvent are mixed and stirred to form a first mixed solution; A first metal oxide precursor is provided, and the first metal oxide precursor and the first mixed solution are mixed and stirred to form a second mixed solution, wherein the molar ratio of the first metal precursor to the first metal oxide precursor is (0.5~0.8):1; The second mixed solution was filtered and dried to obtain the first preform; The first preform and the first organic solvent are mixed to obtain an electronic functional layer solution; and / or, The first interface layer solution further includes a second metallic material, and the preparation steps of the first interface layer solution include: A second metal precursor and a second organic solvent are provided, and the second metal precursor and the second organic solvent are mixed and stirred to form a third mixed solution; A second metal oxide precursor is provided, and the second metal oxide precursor and the third mixed solution are mixed and stirred to form a fourth mixed solution, wherein the molar ratio of the second metal precursor to the second metal oxide precursor is (0.5~0.8):1; The fourth mixed solution is filtered and dried to obtain the second preform; The second preform and the second organic solvent are mixed to obtain a first interface layer solution; and / or, The second interface layer solution further includes a third metallic material, and the preparation steps of the second interface layer solution include: A third metal precursor and a third organic solvent are provided, and the third metal precursor and the third organic solvent are mixed and stirred to form a fifth mixed solution; A third metal oxide precursor is provided, and the third metal oxide precursor and the fifth mixed solution are mixed and stirred to form a sixth mixed solution, wherein the molar ratio of the third metal precursor to the third metal oxide precursor is (0.5~0.8):1; The sixth mixed solution was filtered and dried to obtain the third preform; The third preform and the third organic solvent are mixed to obtain the second interface layer solution.

12. The method for fabricating the optoelectronic device according to claim 11, characterized in that, The first metal precursor, the second metal precursor, and the third metal precursor are independently selected from at least one of copper chloride, silver chloride, and aluminum chloride; and / or, The first organic solvent, the second organic solvent, and the third organic solvent independently comprise at least one of ethanol, ammonia, dimethyl sulfoxide, and N,N-dimethylformamide; and / or, The first metal oxide precursor, the second metal oxide precursor, and the third metal oxide precursor each independently include at least one of nickel chloride hexahydrate and tetrabutyl titanate.

13. The method for fabricating an optoelectronic device according to claim 10, characterized in that, Before the final formation of the cathode, the process also includes the formation of an electron injection layer, specifically including: An electron injection layer solution is provided, and the electron injection layer solution is deposited to form the electron injection layer; wherein the electron injection layer solution includes an MXenes material, and the MXenes material is selected from at least one of two-dimensional transition metal carbides, two-dimensional transition metal nitrides, and two-dimensional transition metal carbonitrides; Wherein, the two-dimensional transition metal in the two-dimensional transition metal carbide, two-dimensional transition metal nitride and two-dimensional transition metal carbonitride is selected from at least one of titanium, vanadium, niobium and molybdenum.

14. The method for fabricating the optoelectronic device according to claim 13, characterized in that, The electron injection layer further includes a fourth doping material, which includes metal nanowires, and the step of forming the electron injection layer includes: Provide MXenes materials; The MXenes material was mixed with a metal nanowire solution to obtain an electron injection layer solution; The electron injection layer solution is deposited to form the electron injection layer; In the electron injection layer solution, the molar ratio of the metal nanowires to the MXenes material is (0.2–0.6):

1.

15. A display device, characterized in that, The display device comprises the optoelectronic device as described in any one of claims 1 to 9; or, The optoelectronic devices in the display device are prepared by the method for preparing optoelectronic devices according to any one of claims 10 to 14.

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