Semiconductor device

Abstract

The present application provides a semiconductor device, which is provided with a semiconductor element on an upper side of an adhesive layer, the adhesive layer is provided with a tapered portion, a semiconductor unit included in the semiconductor element is provided on an upper side of the adhesive layer, and a first cross-sectional area of the semiconductor unit is greater than a second cross-sectional area of the tapered portion. When the semiconductor device is transferred, the laser only needs to irradiate the tapered portion, so that the area of the required laser spot is reduced, thereby stabilizing the transfer of the semiconductor device and avoiding damage to the semiconductor device.

Description

Technical Field

[0001] This invention relates to a semiconductor device, particularly a semiconductor device that can reduce the area of ​​laser irradiation during substrate transfer. Background Technology

[0002] In conventional technologies, chip manufacturing and application processes involve several key technologies, such as mass transfer, a crucial step in transferring large numbers of chips from a primary substrate to a target substrate. During mass transfer, selective irradiation with a laser beam is often used to remove the adhesive layer on the bottom of the chip through energy transfer, allowing the chip to be successfully transferred from the primary substrate to the target substrate. However, in practical applications, this technology suffers from significant problems during chip transfer due to limitations in laser spot design and adhesive distribution.

[0003] In current laser mass transfer processes, the laser spot design needs to completely cover the adhesive layer beneath the chip to ensure uniform laser energy distribution. This allows the adhesive to detach due to heat, releasing the chip. Since the adhesive layer is often designed as a planar structure, its area is typically comparable to or even slightly overlaps with the chip size. Therefore, the size and accuracy of the laser spot are directly limited by the area of ​​the adhesive layer. The spot needs to cover the entire adhesive area to ensure the chip can be properly dropped and transferred.

[0004] However, when a large laser spot is used for irradiation, its wide coverage may directly affect the chip itself. When the laser spot not only irradiates the adhesive material but also the chip structure, it may cause damage to the chip, such as damage to the surface structure and the generation of internal thermal stress. This affects the chip's luminous efficiency and stability. This situation is particularly evident in large-scale chip transfer, because the uneven distribution of laser energy may cause local overheating or damage to the chip.

[0005] Secondly, due to the dense arrangement of chips, a large laser beam often inadvertently affects neighboring chips when irradiating a designated chip. This is especially pronounced when the chip size is small and the chip spacing is narrow. When the laser beam irradiates a neighboring chip, it can cause the non-target chip to be accidentally heated, further leading to chip damage or positioning errors. This reduces the overall transfer efficiency and yield. Such accidental heating of non-target chips can cause irreversible damage to subsequent process steps, affecting the performance of the final product.

[0006] In summary, while laser mass transfer technology holds promise for improving chip transfer efficiency, the requirement for the laser spot to cover the entire adhesive area in current technologies frequently leads to chip damage and overheating of adjacent chips. These issues not only increase yield losses during chip transfer but also challenge the overall stability and reliability of the process. Therefore, improving the precision and controllability of the laser spot and reducing the risk of damage to the chip itself and adjacent chips is a pressing problem for the industry to solve.

[0007] In view of the problems of the prior art, the present invention provides a semiconductor device in which, during transfer, the required laser spot area is reduced by using an adhesive layer having a gradually decreasing area, thereby reducing the risk of damage to the light-emitting chip and adjacent chips. Summary of the Invention

[0008] One object of the present invention is to provide a semiconductor device in which, during transfer, the required laser spot area is reduced by an adhesive layer having a gradually decreasing area, thereby reducing the irradiation area and avoiding laser damage to the semiconductor device.

[0009] To achieve the aforementioned objectives and effects, the present invention provides a semiconductor device comprising: a light-transmitting substrate, an adhesive layer, and a semiconductor element. The adhesive layer is disposed above the light-transmitting substrate and has a tapered portion. The semiconductor element is disposed above the adhesive layer and comprises: a semiconductor unit having a first cross-sectional area at its lower surface larger than a second cross-sectional area of ​​the tapered portion; an insulating layer covering an outer side of the semiconductor unit; and an electrode layer electrically connected to and disposed below the semiconductor unit. The adhesive layer covers the electrode layer. When transferring the semiconductor device, the tapered adhesive layer structure enables stable transfer of the semiconductor device, preventing it from tilting and being damaged when dropped.

[0010] In one embodiment of the present invention, the semiconductor unit is a light-emitting diode.

[0011] In one embodiment of the present invention, the light-transmitting substrate is a sapphire substrate.

[0012] In one embodiment of the present invention, the tapered portion is disposed in the middle of the adhesive layer, so that the adhesive layer forms a funnel-shaped structure.

[0013] In one embodiment of the present invention, the adhesive layer is connected to the light-transmitting substrate via the tapered portion.

[0014] In one embodiment of the present invention, the first cross-sectional area is the minimum cross-sectional area of ​​the semiconductor unit.

[0015] In one embodiment of the present invention, the tapered portion is formed by an inductively coupled plasma etching or a reactive ion etching of the adhesive layer.

[0016] In one embodiment of the present invention, the semiconductor element is separated from the light-transmitting substrate by laser peeling of the adhesive layer.

[0017] In one embodiment of the present invention, the insulating layer is made of silicon nitride or silicon oxide.

[0018] In one embodiment of the present invention, the thickness of the insulating layer is 500nm to 1000nm, the thickness of the adhesive layer is 0.1μm to 10μm, the thickness of the adhesive layer corresponds to the area of ​​the semiconductor element, and the light absorption wavelength of the adhesive layer is 248nm to 355nm. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of one embodiment of the present invention; Figures 2A to 2B This is a schematic diagram of the front substrate transfer according to an embodiment of the present invention; Figures 3A to 3B This is a schematic diagram illustrating the function of the adhesive layer in one embodiment of the present invention. Figure 4 This is a schematic diagram illustrating the manufacturing process of the receiving part structure according to another embodiment of the present invention; and Figures 5A to 5B This is a schematic diagram illustrating the function of the adhesive layer in another embodiment of the present invention. [Figure Number Reference Guide] 10: Transparent substrate 20: Adhesive layer 20': Adhesive layer 202: tapering section 30: Semiconductor components 32: Semiconductor unit 34: Insulation layer 36: Electrode layer 40: Another substrate 50: Another adhesive layer A1: First cross-sectional area A2: Second cross-sectional area S: Front substrate Detailed Implementation

[0020] To provide a better understanding of the structural features and effects achieved by the present invention, preferred embodiments and detailed descriptions are provided below:

[0021] In view of the problems of the prior art, the present invention provides a tapered portion in an adhesive layer, and a semiconductor unit including a semiconductor element is disposed on the adhesive layer above it. The first cross-sectional area of ​​the bottom of the semiconductor unit is larger than the second cross-sectional area of ​​the tapered portion. When transferring the semiconductor device, the area of ​​the laser spot only needs to cover the tapered portion, thereby reducing the required area of ​​the laser spot. This solves the problem in the prior art where, during mass transfer, the large irradiation area of ​​the laser causes damage to the semiconductor device, resulting in a decrease in yield and an increase in manufacturing costs.

[0022] Please see Figure 1 The figure shows a schematic diagram of an embodiment of the present invention. This embodiment is the first embodiment, which is a semiconductor device that includes a light-transmitting substrate 10, an adhesive layer 20, and a semiconductor element 30.

[0023] See again Figure 1 And see Figures 3A to 3B , Figures 3A to 3B This is a schematic diagram of the function of the adhesive layer according to an embodiment of the present invention. As shown in the figure, this embodiment is the first embodiment. In this embodiment, the adhesive layer 20 is disposed on the upper part of the light-transmitting substrate 10. The adhesive layer 20 has a tapered portion 202. The semiconductor element 30 is disposed on the upper part of the adhesive layer 20. The semiconductor element 30 includes a semiconductor unit 32, an insulating layer 34, and an electrode layer 36. A first cross-sectional area A1 on the lower part of the semiconductor unit 32 is larger than a second cross-sectional area A2 of the tapered portion 202. The insulating layer 34 covers the outer side of the semiconductor unit 32. The electrode layer 36 is electrically connected to and disposed on the lower part of the semiconductor unit 32.

[0024] Continuing from the above, in this embodiment, the tapered portion 202 of the adhesive layer 20 is disposed in the middle of the adhesive layer 20, so that the adhesive layer 20 forms a funnel-shaped structure.

[0025] In one embodiment, the semiconductor unit 32 of the semiconductor element 30 is a light-emitting diode (LED).

[0026] In one embodiment, the light-transmitting substrate 10 is a sapphire substrate.

[0027] In one embodiment, the insulating layer 34 is made of silicon nitride or silicon oxide.

[0028] In one embodiment, the thickness of the insulating layer 34 is 500nm to 1000nm. It should be noted that the first cross-sectional area A1 of the bottom surface of the semiconductor unit 32 plus the thickness of the insulating layer 20 is greater than the second cross-sectional area A2 of the tapered portion 202.

[0029] See again Figure 1 , Figures 3A to 3B And see Figures 2A to 2B , Figures 2A to 2B This is a schematic diagram of the front substrate transfer according to an embodiment of the present invention. As shown in the figure, during the manufacturing of the semiconductor element 30, the semiconductor element 30 is first formed on a front substrate S. After the semiconductor unit 32 and the electrode layer 36 of the semiconductor element 30 are formed, the semiconductor unit 32 is covered with an insulating material to form an insulating layer 34. Then, the semiconductor element 30 is transferred to the light-transmitting substrate 10 and the adhesive layer 20. The adhesive layer 20 is first etched to form the tapered portion 202, and then the semiconductor element 30 is transferred accordingly. After the transfer, as shown... Figure 1 As shown, the adhesive layer 20 is further etched to form the tapered portion 202.

[0030] Continuing from the above, such as Figure 3A As shown, when transferring the semiconductor device 30, the entire device is flipped over, and a laser lift-off method is used to irradiate the tapered portion 202 of the adhesive layer 20, causing the material of the tapered portion 202 to vaporize, as shown. Figure 3B As shown, this causes the semiconductor element 30 and part of the adhesive layer 20' to fall off.

[0031] Continuing from the above, since the second cross-sectional area A2 of the tapered portion 202 is smaller than the first cross-sectional area A1 of the bottom surface of the semiconductor unit 32, the area of ​​the laser spot can be limited to the size of the second cross-sectional area A2, so as to avoid the laser spot area being too large and causing the laser to irradiate the semiconductor unit 32 or the insulating layer 34, resulting in damage to these components.

[0032] Continuing from the above, the first cross-sectional area A1 is further defined as the minimum cross-sectional area of ​​the semiconductor unit 32.

[0033] Continuing from the above, in one embodiment, the adhesive layer 20 is further etched by an inductively coupled plasma etching or a reactive ion etching to form the tapered portion 202.

[0034] In the above embodiments, inductively coupled plasma (ICP) is a plasma generation technology based on electromagnetic induction, widely used in fields such as chemical analysis, materials processing, and semiconductor manufacturing. Its principle is based on the alternating magnetic field generated in an induction coil by a high-frequency alternating current, which induces the movement of electrons in the gas to achieve gas ionization and stable plasma maintenance.

[0035] The generation process of inductively coupled plasma begins with the introduction of a gas (such as argon). When a high-frequency current passes through an induction coil, an alternating magnetic field is generated. This magnetic field exerts a force on the free electrons in the gas, causing them to move at high speed. These electrons collide with gas molecules or atoms, triggering a series of ionization processes to form plasma. Due to the continuous action of the induced magnetic field, the electrons within the plasma are continuously accelerated, thus maintaining a high-temperature and stable plasma environment.

[0036] One of the main characteristics of inductively coupled plasma (ICP) is its electrodeless design. Traditional plasma generation techniques often rely on direct contact with electrodes, but this method is prone to erosion of electrode materials, leading to contamination. ICP technology utilizes an induced magnetic field for energy coupling, avoiding this problem and significantly improving the purity and stability of the plasma. Furthermore, ICP can generate extremely high plasma temperatures, enabling it to effectively decompose and excite various substances in the sample.

[0037] In the above embodiments, reactive-ion etching (RIE) is a plasma etching technology widely used in semiconductor manufacturing and micro-nano fabrication. It combines chemical reaction and physical etching mechanisms to achieve precise selective removal of material surfaces. With its high directionality, high resolution and excellent material compatibility, reactive-ion etching technology has become a key step in the fabrication of fine structures in modern semiconductor processes.

[0038] Reactive ion etching (RIE) works on the basis of plasma generation and control. In an RIE system, a specific gas (such as fluoride or chloride gas) is injected into the reaction chamber, and a high-frequency electric field is applied to the gas via a radio frequency power supply to generate plasma. Ions and free radicals in the plasma react chemically with the material surface to generate volatile byproducts. These byproducts are then removed by a vacuum pump, thereby removing the material. In addition, the electric field-driven ions bombard the material surface with a high degree of directionality, achieving physical etching and further enhancing the vertical orientation of the etching.

[0039] The combination of chemical reaction and physical etching is the core characteristic of reactive ion etching. Chemical reaction provides high selectivity, effectively distinguishing the etch target from the mask material based on material properties and the choice of reactant gas; physical etching brings excellent directionality, making it suitable for fabricating deep and narrow structural features, such as transistor trenches, microelectromechanical systems (MEMS) structures, and fine patterns in optical devices.

[0040] Reactive ion etching (RIE) technology offers flexible process tunability. By adjusting the gas composition, gas pressure, radio frequency power, and electrode bias, RIE systems can precisely control the etching rate, selectivity, and directionality. Different gases produce different reactive ions, making them suitable for processing different materials. For example, fluorine-based gases are commonly used for etching silicon, while chlorine-based gases are suitable for etching metals and compound semiconductors.

[0041] Please see Figure 4 as well as Figures 5A to 5B Figure 3 is a schematic diagram of the manufacturing process of the receiving part structure according to another embodiment of the present invention. Figures 5A to 5B The figure shows a schematic diagram of the function of the adhesive layer in another embodiment of the present invention. As shown, this embodiment is based on the first embodiment described above. The adhesive layer 20 is connected to the light-transmitting substrate 10 by the tapered portion 202, so that the adhesive layer 20 forms an inverted trapezoidal structure. The first cross-sectional area A1 below the semiconductor unit 32 is larger than the second cross-sectional area A2 of the tapered portion 202.

[0042] Continuing from the above, such as Figure 5A As shown, when the semiconductor element 30 is to be transferred, the whole thing is flipped over and a laser lift-off method is used to irradiate the tapered portion 202 of the adhesive layer 20, causing the material of the tapered portion 202 to vaporize, as shown in Figure 4B, so that the semiconductor element 30 and the adhesive layer 20 fall off.

[0043] The structure of this embodiment further allows the adhesive layer 20 to fall off completely along with the semiconductor element 30. The other elements and their operating relationships in this embodiment are the same as those in the above embodiments, so they will not be described again.

[0044] In the above embodiments, the semiconductor device is exemplified as a light-emitting device. The semiconductor element 30 can be a light-emitting element, and the semiconductor unit 32 can be a light-emitting unit, such as a light-emitting diode.

[0045] In the above embodiments, the thickness of the adhesive layer 20 is 0.1μm to 10μm, and the relative relationship between the thickness of the adhesive layer 20 and the area of ​​the semiconductor device 30 with better peeling effect is shown in Table 1 below.

[0046] Table 1 shows the relative relationship between the thickness of the adhesive layer 20 and the area of ​​the semiconductor device 30. Thickness of the adhesive layer (μm) <![CDATA[Area of semiconductor device (μm 2 )]]> 1～5 <100 0.5～4 100～799 0.1～3 800～2000 In this embodiment, the semiconductor structure can reduce damage and misalignment of the semiconductor element 30 by providing the adhesive layer 20 of corresponding thickness for semiconductor components 30 of different areas, as shown in Table 1 above.

[0047] The light absorption wavelength of the adhesive layer 20 is 200nm to 400nm. For example, it is a laser lift-off material or a laser debonding material. The material of the adhesive layer 20 is generally polyimide or silicon oxide. It can absorb the energy of lasers with a wavelength of 355nm, or even lasers with a wavelength of 248nm or 266nm.

[0048] In summary, the present invention provides a semiconductor device in which an adhesive layer has a tapered portion with an area that gradually decreases in one direction. A semiconductor element is disposed above the adhesive layer, and the area of ​​the bottom of the semiconductor element is larger than the area of ​​the tapered portion. When transferring the semiconductor element, the area of ​​the laser spot only needs to cover the tapered portion, thereby reducing the required area of ​​the laser spot. This solves the problem in the prior art where, during mass transfer, the laser spot needs to cover the entire bottom area of ​​the semiconductor element, causing the laser to irradiate the semiconductor element or insulating layer, resulting in chip damage or localized overheating and increased manufacturing costs.

[0049] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent variations and modifications made in accordance with the shape, structure, features and spirit described in the claims of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A semiconductor device, characterized in that, It includes: a light-transmissive substrate; An adhesive layer is disposed on one side of the light-transmitting substrate, and the adhesive layer has a tapered portion; and A semiconductor element disposed above the adhesive layer, the semiconductor element comprising: A semiconductor cell, wherein a first cross-sectional area at its lower part is larger than a second cross-sectional area of ​​the tapered portion; An insulating layer covering one outer side of the semiconductor unit; and An electrode layer electrically connected to and disposed below the semiconductor unit, and an adhesive layer covering the electrode layer.

2. The semiconductor device as claimed in claim 1, characterized in that, The semiconductor unit is a light-emitting diode.

3. The semiconductor device as claimed in claim 1, characterized in that, The light-transmitting substrate is a sapphire substrate.

4. The semiconductor device as claimed in claim 1, characterized in that, The tapered portion is located in the middle of the adhesive layer, forming a funnel-shaped structure.

5. The semiconductor device as claimed in claim 1, characterized in that, The adhesive layer is connected to the light-transmitting substrate via the tapered portion.

6. The semiconductor device as claimed in claim 1, characterized in that, The first cross-sectional area is the minimum cross-sectional area of ​​the semiconductor unit.

7. The semiconductor device as claimed in claim 1, characterized in that, The tapered portion is formed by an inductively coupled plasma etching or a reactive ion etching process.

8. The semiconductor device as claimed in claim 1, characterized in that, The semiconductor device is separated from the light-transmitting substrate by irradiating the adhesive layer with a laser.

9. The semiconductor device as claimed in claim 1, characterized in that, The insulating layer is made of silicon nitride or silicon oxide.

10. The semiconductor device as claimed in claim 1, characterized in that, The thickness of the insulating layer is 500nm to 1000nm, the thickness of the adhesive layer is 0.1μm to 10μm, the thickness of the adhesive layer corresponds to the area of ​​the semiconductor device, and the light absorption wavelength of the adhesive layer is 248nm to 355nm.

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