Composite cleaning system

Abstract

The utility model relates to a combined type cleaning system. The combined type cleaning system is used for carrying out a combined type cleaning process. The combined type cleaning system comprises a carrying platform, a laser cleaning device and a gas or liquid cleaning device, the carrying platform is used for carrying at least one object, and the object is provided with at least one object to be cleaned on a to-be-cleaned area of the object. The composite cleaning step of the composite cleaning process comprises a step of carrying out laser reactive cleaning on a to-be-cleaned area of an object by using a laser cleaning device and a step of carrying out gas or liquid reactive cleaning on the to-be-cleaned area of the object by using a gas or liquid cleaning device, therefore, one of the laser cleaning device and the gas or liquid cleaning device is assisted by the other one to improve the cleaning effect on the to-be-cleaned target. According to the utility model, the problems caused by hardware in the prior art are overcome by improving the hardware.

Description

Technical Field

[0001] The utility model relates to a cleaning system, in particular to a composite cleaning system. Background Art

[0002] There are five major pollutants in the semiconductor wafer process: particles, metal impurities (such as metal ions), organic pollutants, native oxide layer (Native Oxide) and micro-roughness structure on the wafer surface. The process of semiconductor wafers is quite complicated, and every step included in the front-end process or the back-end process, such as etching, oxidation, deposition, photoresist removal, chemical mechanical polishing, packaging and cutting, are the sources of wafer surface contamination. These pollutants have a considerable impact on the process quality and yield, so the wafer process must undergo repeated cleaning processes. Moreover, with the development of very large-scale integrated circuits (VLSI, ULSI), the requirements for wafer cleanliness have become more stringent. At present, the industry often uses the RCA standard cleaning method (RCAStandard Clean) to clean wafers. The RCA standard cleaning method was developed by RCA in the 1960s and has been used for a long time. The reason is that there is no new cleaning technology that can effectively replace it (SC-1, also known as APM; SC-2, also known as HPM). Taking cleaning of substrate as an example, the conventional technology uses SPM / SC-1 cleaning formula, SC-2 / SPM / DHF cleaning formula and SC-1 cleaning formula as reactive cleaning ingredients to perform one or more cleaning steps. Taking cleaning of objects that have completed the front-end process (FEOL) as an example, the conventional technology uses SPM / SC-1 cleaning formula, SC-2 / SPM / DHF cleaning formula and SPM cleaning formula as reactive cleaning ingredients to perform one or more cleaning steps. Taking cleaning of objects that have completed the back-end process (BEOL) as an example, the conventional technology uses EKC, NMP, IPA, ACE solvent or solution as a cleaning formula to perform one or more cleaning steps, wherein NMP is N-methylpyrrolidon, EKC solution is a mixed solution containing NMP (N-methylpyrrolidon, N-Methylpyrrolidon) solvent and alkaline amine, IPA is isopropyl alcohol, and ACE is acetone. Taking the cleaning of packaged objects as an example, conventional techniques use EKC, NMP, IPA, ACE solvents or solutions as cleaning formulas to perform one or more cleaning steps. However, the traditional cleaning process consumes a lot of water and generates a lot of hazardous waste emissions.

[0003] Furthermore, process nano-ization and "green production" are the common trends in the development of high-tech industries at present and in the future. Technologies including deep sub-micron semiconductors, TFT-LCD, III-V communication components, ultra-precision machining, nano-material manufacturing and nano-electronic components are actively developing in the direction of ultra-fineness and ultra-cleanliness. In the nano-process environment, even if there are very small amounts of pollutants in any link, such as microparticles, metal impurities, organic matter or polymers, it may cause great damage to the process yield. However, this increasingly stringent process cleanliness requirement can no longer be provided by the RCA cleaning technology of traditional electronic processes, and the aforementioned processes with high water resource consumption and high pollution water discharge will also seriously affect the development of high-tech electronic industries.

[0004] Although there is currently a technology that uses ozone for cleaning, due to the low solubility of ozone in aqueous solutions and its high sensitivity to environmental variables, it is very easily affected by the concentration of gaseous ozone, solution temperature, and pH, resulting in unstable cleaning efficiency. In addition, although the current technology simply attempts to change physical conditions, such as improving the ozone water gas-liquid contact system and the temperature and pressure operating range of the cleaning system to increase the concentration of ozone water and increase the reaction rate, the improvement is limited, resulting in the fact that ozone water technology has not yet been widely used in the process.

[0005] By controlling physical conditions, such as improving the ozone water gas-liquid contact system and the temperature and pressure operating range control of the cleaning system, the ozone water concentration and the reaction rate can be increased as much as possible. However, the efficiency in practical application is still not ideal. The reason is that the improvement of increasing the ozone water concentration by simply changing the physical conditions to approach the thermodynamic ozone saturation concentration is limited, resulting in the fact that ozone water technology has not yet been widely used in the process. It can be seen that there are still many areas that need to be improved in the existing semiconductor cleaning technology, and the problems of the existing technology are all caused by hardware. Utility Model Content

[0006] In view of this, one or more objects of the present invention is to provide a composite cleaning system, which can solve the increasingly stringent process cleanliness requirements by improving the hardware and relying on conventional software and programs to overcome the problems caused by the hardware in the above-mentioned prior art.

[0007] To achieve the aforementioned objectives, the utility model provides a composite cleaning system for performing a composite cleaning step on a region to be cleaned of at least one object, comprising: a carrier for carrying the object, the object having at least one target to be cleaned located in the region to be cleaned of the object; a laser cleaning device for performing a laser reactive cleaning step on the region to be cleaned of the object; and a gas or liquid cleaning device for performing a gas or liquid reactive cleaning step on the region to be cleaned of the object, so that one of the laser cleaning device and the gas or liquid cleaning device can enhance a cleaning effect of the target to be cleaned on the region to be cleaned with the assistance of the other.

[0008] The laser cleaning device and the gas or liquid cleaning device respectively perform the laser reactive cleaning step and the gas or liquid reactive cleaning step on the to-be-cleaned area of ​​the object simultaneously, sequentially or in reverse order in the composite cleaning step.

[0009] The gas or liquid cleaning device is used to perform a cleaning step selected from the group consisting of an ozone cleaning method, a hydrofluoric acid cleaning method and an RCA cleaning agent cleaning method on the to-be-cleaned area of ​​the object.

[0010] Among them, the ozone cleaning method uses ozone water, ozone and / or hydrofluoric acid to clean the area to be cleaned of the object, the hydrofluoric acid cleaning method uses hydrofluoric acid to clean the area to be cleaned of the object, and the RCA cleaning agent cleaning method uses RCA cleaning agent to clean the area to be cleaned of the object.

[0011] The gas or liquid cleaning device further comprises a tank, wherein the area to be cleaned of the object is subjected to the gas or liquid reactive cleaning step in the tank.

[0012] The gas or liquid cleaning device further comprises a tank body, wherein the number of the objects is plural, and the plural objects are placed in the tank body at the same time to perform the gas or liquid reactive cleaning step.

[0013] The gas or liquid cleaning device of the composite cleaning system further comprises an oscillating component for oscillating the area to be cleaned of the object while performing the composite cleaning step on the area to be cleaned of the object.

[0014] The gas or liquid cleaning device of the combined cleaning system includes a temperature control and adjustment component for controlling and adjusting the temperature of the combined cleaning step when the combined cleaning step is performed on the to-be-cleaned area of ​​the object.

[0015] The carrier is a rotating workbench for rotating the object, so that the gas or liquid cleaning device performs the gas or liquid reactive cleaning step on the area to be cleaned of the rotating object.

[0016] The gas or liquid cleaning device comprises a gas or liquid supply source, and the gas or liquid supply source is selected from the group consisting of an ozone water generating device, an ozone generating device, a hydrofluoric acid supply device and an RCA cleaning agent supply device.

[0017] The composite cleaning system further comprises a step of performing a polishing step on the area to be cleaned of the object before, between or after the laser cleaning device performs the laser reactive cleaning step and the gas or liquid cleaning device performs the gas or liquid reactive cleaning step.

[0018] The composite cleaning system further comprises a plasma device, wherein the plasma device provides a plasma to the to-be-cleaned area of ​​the object before or after the polishing step.

[0019] The composite cleaning step of the composite cleaning system performs the polishing step on the to-be-cleaned area of ​​the object in an environment containing ozone or ozone water.

[0020] The composite cleaning step of the composite cleaning system further includes using a plasma device to provide a plasma to the to-be-cleaned area of ​​the object.

[0021] The plasma device is a remote plasma device, and the plasma is a remote plasma.

[0022] The laser cleaning device generates a laser beam to provide a pulsed energy to the area to be cleaned of the object in a scanning manner.

[0023] In the laser reactive cleaning step, the laser cleaning device allows the target to be cleaned on the area to be cleaned of the object to absorb the pulse energy and to be separated from the area to be cleaned of the object.

[0024] The laser cleaning device allows a liquid to absorb the pulse energy to generate an explosion pressure wave during the laser reactive cleaning step, thereby producing the cleaning effect on the target to be cleaned on the to-be-cleaned area of ​​the object with the assistance of the liquid.

[0025] The laser cleaning device provides the pulsed energy to focus on a focal position at a distance from the target to be cleaned during the laser reactive cleaning step, so as to produce the cleaning effect on the target to be cleaned on the area to be cleaned through the plasma shock wave formed at the focal position.

[0026] The laser cleaning device provides the adjustable pulsed energy to the to-be-cleaned area of ​​the object via the laser beam during the laser reactive cleaning step.

[0027] The laser beam is a pulsed nanosecond laser with a wavelength of 1,064nm.

[0028] As mentioned above, the composite cleaning system according to the present invention has one or more advantages or technical effects:

[0029] (1) The present invention adopts conventional software and programs and improves the hardware to overcome the problems caused by the hardware of the above-mentioned prior art. The present invention replaces the conventional technology of cleaning objects only by RCA cleaning agent cleaning method by using laser cleaning device to perform laser reactive cleaning step and gas or liquid cleaning device to perform gas or liquid reactive cleaning step, which can meet the increasingly stringent process cleanliness requirements.

[0030] (2) The present invention uses a laser cleaning device in combination with a gas or liquid cleaning device, which can significantly reduce the number of process steps, reduce water consumption, reduce the use and discharge of chemicals, shorten the process time and increase production capacity.

[0031] (3) The present invention uses a laser cleaning device in combination with a gas or liquid cleaning device, which has a good cleaning effect on various targets to be cleaned (such as organic matter, polymers, metal attachments, particles and native oxide layers), and the surface roughness is better than that of traditional standard cleaning procedures.

[0032] (4) The present invention uses a laser cleaning device to provide pulsed energy in combination with a gas or liquid cleaning device, and then in combination with a plasma device to provide plasma, which can further reduce the roughness of the area to be cleaned, remove small defects (crystal level), perform high temperature annealing, and perform micro-epitaxial growth.

[0033] (5) The utility model uses a laser cleaning device in combination with a gas or liquid cleaning device. The gas or liquid cleaning device uses ozone (UV-Ozone) or ozone water (DI-Ozone) during the gas or liquid reactive cleaning step to combine or replace the harmful chemicals in the traditional cleaning process, thereby reducing water consumption, reducing the use and discharge of chemicals, shortening the process time and increasing production capacity. The cleaning effect and surface roughness are better than those of the traditional standard cleaning procedure.

[0034] (6) The present invention uses the pulsed energy of a laser cleaning device to clean the area to be cleaned, so that the target to be cleaned located thereon is ionized and leaves the area after absorbing the high-energy light of the short laser pulse.

[0035] (7) The present invention uses a laser cleaning device in combination with a gas or liquid cleaning device. The reactive cleaning components used by the gas or liquid cleaning device in the gas or liquid reactive cleaning step can be ozone (gas or aqueous solution), ozone (gas or aqueous solution) and hydrofluoric acid (gas or aqueous solution), or RCA cleaning agent, all of which can meet the process cleanliness requirements. The present invention overcomes the problems caused by the use of other hardware for cleaning in the above-mentioned prior art by improving the hardware and relying on conventional software and programs.

[0036] In order to enable you to have a further understanding and recognition of the technical features and technical effects of the utility model, a preferred embodiment and a detailed description are provided as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a schematic diagram of the flow of the composite cleaning process of the composite cleaning system of the first embodiment of the utility model.

[0038] Figure 2 FIG. 1 is a schematic diagram of a composite cleaning system according to the first embodiment of the present invention, wherein the laser cleaning device and the gas or liquid cleaning device are separate and different devices. Figure 2 (A) shows the laser reactive cleaning step. Figure 2 (B) shows the implementation of a gas or liquid reactive cleaning step.

[0039] Figure 3 FIG. 1 is a schematic diagram of a composite cleaning system according to a first embodiment of the present invention, wherein a laser cleaning device and a gas or liquid cleaning device are integrated into the same device.

[0040] Figure 4 It is a schematic diagram of the flow of the composite cleaning process of the composite cleaning system of the second embodiment of the utility model.

[0041] Figure 5 Schematic diagram of a composite cleaning system according to a second embodiment of the present invention. Figure 5 (A) shows the grinding and polishing steps. Figure 5 (B) shows the laser reactive cleaning step. Figure 5 (C) shows the performance of a gas or liquid reactive cleaning step.

[0042] Figure 6 FIG. 1 is a flow chart of a composite cleaning process of a composite cleaning system according to a third embodiment of the present invention. Figure 6 (A) is the first process state. Figure 6 (B) is the second process state.

[0043] Figure 7Schematic diagram of a composite cleaning system according to a third embodiment of the present invention. Figure 7 (A) shows the step of providing plasma, Figure 7 (B) shows the grinding and polishing steps. Figure 7 (C) shows the laser reactive cleaning step. Figure 7 (D) shows the performance of a gas or liquid reactive cleaning step.

[0044] Figure 8 It is a schematic diagram of the structure of the laser cleaning device of the present invention in which the laser beam irradiates the cleaning target at an inclined angle.

[0045] Description of reference numerals:

[0046] 10: Laser cleaning device

[0047] 12: Laser beam generator

[0048] 14: Lens group

[0049] 16: Laser beam

[0050] 19: Junction

[0051] 20: Gas or liquid cleaning device

[0052] 22: Gas or liquid supply source

[0053] 24: Slot

[0054] 25: Liquid

[0055] 26: Oscillating components

[0056] 28: Temperature control and adjustment components

[0057] 50: Grinding and polishing device

[0058] 52: Rotating platform

[0059] 54: polishing pad

[0060] 56: Grinding slurry supply source

[0061] 57: Abrasive slurry

[0062] 60: Plasma device

[0063] 62: Plasma Source

[0064] 63: Plasma

[0065] 64: Cavity

[0066] 100: Object

[0067] 110: Area to be cleaned

[0068] 120: Target to be cleaned

[0069] 200: Carrier

[0070] S10, S20, S210, S220, S230, S240: Steps

[0071] θ: Tilt angle DETAILED DESCRIPTION

[0072] In order to facilitate understanding of the technical features, contents and advantages of the present invention and the effects that can be achieved, the present invention is hereby described in detail in the form of embodiments in conjunction with the drawings. The drawings used therein are only for illustration and auxiliary description purposes and may not be the actual proportions and precise configurations after the implementation of the present invention. Therefore, the proportions and configurations of the attached drawings should not be interpreted or limited to the scope of rights of the present invention in actual implementation. In addition, for ease of understanding, the same elements in the following embodiments are described with the same symbols.

[0073] In addition, the words used throughout the specification and claims generally have the ordinary meaning of each word used in the field, in the content disclosed herein, and in the specific content, unless otherwise noted. Certain words used to describe the utility model will be discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in the description of the utility model.

[0074] The use of “first,” “second,” “third,” “fourth,” etc. in this document does not specifically refer to an order or sequence, nor is it used to limit the present invention. It is merely used to distinguish components or operations described with the same technical terms.

[0075] Secondly, the words "include", "including", "have", "contain" and the like used in this article are open terms, which mean including but not limited to.

[0076] The composite cleaning process and system of the utility model uses at least two or more cleaning devices to perform at least two or more reactive cleaning steps on various objects. The utility model can achieve better cleaning effects on the target to be cleaned on the area to be cleaned on the object than the traditional single reactive cleaning step, and can play the role of mutual auxiliary cleaning, thereby meeting the increasingly stringent process cleanliness requirements. The composite cleaning process and system of the utility model can be used to remove various pollutants in the process of various semiconductor objects, such as particles, metal impurities, organic pollutants, native oxide layers (Native Oxide) and micro-rough structures on the surface of the object, and can also be used to replace the plasma ashing technology used in the traditional photoresist stripping process. The term "cleaning" used in the present invention generally refers to cleaning, clearing and / or removing the target to be cleaned located in the area to be cleaned of the object, and even includes weakening or overcoming the van der Waals force or electrostatic force between the target to be cleaned and other substances (e.g., the object to which the target to be cleaned is attached or the object formed by it). The object to be cleaned is, for example, various substrates, front-end-of-line (FEOL) objects, back-end-of-line (BEOL) objects, or packaging objects, and the structures formed thereon are not limited. The object may also be, for example, a crystal ingot, a wafer before cutting and polishing, or a wafer after polishing. For example, the object to which the present invention is applicable may be a semiconductor such as a first type semiconductor, a second type semiconductor or a third type semiconductor, such as, but not limited to, a semiconductor material selected from the group consisting of silicon, gallium arsenide, indium phosphide, gallium nitride and silicon carbide, and may be, for example, a low energy gap semiconductor (<1.5eV) or a high energy gap semiconductor (>3.0eV). It can be seen that the target to be cleaned applicable to the present invention may be one or more corresponding substances or material layers according to the type of the actual object to be cleaned and the processing process that the object has undergone before cleaning, such as, but not limited to, selected from the group consisting of organic matter (such as photoresist residue), polymer (such as photoresist polymer), metal impurities (such as metal ions), particles, micro-rough structures and native oxide layers, and the above-mentioned target to be cleaned is, for example, attached to the object or a part of the structure of the object. However, it should be noted that although the applicable objects and targets to be cleaned are listed as above, they are not intended to limit the scope of rights of the present invention. Any objects and targets to be cleaned as long as they can achieve the cleaning effect through the composite cleaning process or composite cleaning system of the present invention are within the scope of protection requested by the present invention.A person with ordinary knowledge in the technical field to which the present invention belongs should be able to clearly understand based on the disclosure of the present invention that the composite cleaning system of the present invention is not an improvement on software or programs, but rather can meet increasingly stringent process cleanliness requirements by improving hardware and relying on conventional software and programs.

[0077] Figure 1 FIG. 1 is a schematic diagram of the flow of the composite cleaning process of the first embodiment of the utility model. Figure 2 FIG. 1 is a schematic diagram of a composite cleaning system according to the first embodiment of the present invention, wherein the laser cleaning device and the gas or liquid cleaning device are separate and different devices. Figure 2 (A) shows the laser reactive cleaning step. Figure 2 (B) shows a gas or liquid reactive cleaning step, Figure 3 This is a schematic diagram of a composite cleaning system according to the first embodiment of the present invention, wherein a laser cleaning device and a gas or liquid cleaning device are integrated into the same device. Figure 1 , Figure 2 and Figure 3 The composite cleaning process of the present invention at least comprises the following steps: providing an object 100 (S10), wherein the object 100 has at least one target to be cleaned 120 located on a region to be cleaned 110; and performing a composite cleaning step (S20) on the region to be cleaned 110 of the object 100 using a composite cleaning system. The composite cleaning step (S20) comprises performing a laser reactive cleaning step (S210) on the region to be cleaned 110 of the object 100 using a laser cleaning device 10; and performing a gas or liquid reactive cleaning step (S220) on the region to be cleaned 110 of the object 100 using a gas or liquid cleaning device 20. One feature of the present invention is that one of the laser reactive cleaning step (S210) performed by the laser cleaning device 10 and the gas or liquid reactive cleaning step (S220) performed by the gas or liquid cleaning device 20 can be assisted by the other to improve the cleaning effect of the target 120 to be cleaned on the cleaning area 110. The composite cleaning system of the present invention overcomes the problems caused by the hardware of the prior art by improving the hardware and adopting the conventional software and program.

[0078] Please continue reading Figure 1 , Figure 2 and Figure 3The composite cleaning system of the present invention at least comprises a laser cleaning device 10 for providing pulsed energy (e.g., one or more laser beams 16) and a gas or liquid cleaning device 20 for providing reactive cleaning components (e.g., one or more reactive gases and / or liquids), wherein the composite cleaning system selectively comprises a carrier 200 for carrying at least one object 100 to be cleaned, the number of the objects 100 may be one or more, wherein the object 100 has at least one target 120 to be cleaned located on a region 110 to be cleaned. The laser cleaning device 10, for example, comprises a laser beam generator 12 and a lens group 14, wherein the laser beam generator 12 generates one or more laser beams 16 and irradiates the object 100 to be cleaned through the lens group 14, so as to perform a laser reactive cleaning step (S210), wherein the lens group 14 may also be selectively omitted or integrated into the laser beam generator 12. The gas or liquid cleaning device 20, for example, includes a gas or liquid supply source 22 for supplying reactive cleaning components (e.g., reactive gas and / or liquid) to the object 100 to be cleaned, and the gas or liquid cleaning device 20 optionally further includes a tank 24, which is, for example, a hollow container, so that one or more objects 100 to be cleaned can be placed in the tank 24 at the same time, and the reactive cleaning components (e.g., liquid 25) are supplied to the tank 24 to perform the gas or liquid reactive cleaning step (S220). The gas or liquid supply source 22 of the gas or liquid cleaning device 20 can be selectively selected from conventional commercial products, for example, but not limited to, selected from the group consisting of an ozone water generator, an ozone generator, a hydrofluoric acid supply device, and an RCA cleaning agent supply device, so as to supply one or more reactive gases and / or liquids. The ozone water generating device is used to supply ozone water conventionally used for cleaning, the ozone generating device is used to supply ozone gas conventionally used for cleaning, the hydrofluoric acid supply device is used to supply gaseous or liquid hydrofluoric acid conventionally used for cleaning, and the RCA cleaning agent supply device is used to supply RCA cleaning agents conventionally used for cleaning, such as, but not limited to, SC-1 cleaning formula and SC-2 cleaning formula.

[0079] The gas or liquid cleaning device 20 may also selectively include an oscillation component 26, such as an ultrasonic oscillation component, which generates ultrasonic oscillations to enhance the cleaning effect of the gas or liquid reactive cleaning step (S220). In addition, the gas or liquid cleaning device 20 may also selectively include a temperature control and adjustment component 28, which may be, for example, a conventional commercial temperature controller, for controlling and adjusting the temperature when the gas or liquid reactive cleaning step (S220) is performed on the object 100. For example, the temperature of the gas or liquid reactive cleaning step (S220) is adjusted in real time according to the temperature required for the cleaning reaction between the reactive cleaning components provided by the gas or liquid reactive cleaning step (S220) and the target 120 to be cleaned. Among them, the object 100 to be cleaned may also be selectively carried on the carrier 200 and placed in the tank 24 through the movement of the carrier 200. The laser cleaning device 10 and the gas or liquid cleaning device 20 may be independent of each other (e.g., Figure 2 as shown) or integrated with each other (e.g. Figure 3 As shown), the utility model can selectively perform the above-mentioned laser reactive cleaning step (S210) and gas or liquid reactive cleaning step (S220) in different devices or in the same device.

[0080] In the composite cleaning process of the composite cleaning system of the present invention, the laser cleaning device 10 and the gas or liquid cleaning device 20 can be selected from the group consisting of dry cleaning methods and wet cleaning methods. The laser cleaning device 10 of the present invention generates one or more laser beams 16 to scan directly or indirectly provide pulsed energy (e.g., pulsed reactive energy) to the area to be cleaned 110 of the object 100, so as to perform a laser reactive cleaning step (S210) on the area to be cleaned 110 of the object 100, wherein the laser reactive cleaning step (S210) is selected from the group consisting of dry cleaning methods and wet cleaning methods, so as to achieve the effect of dry or wet cleaning of the area to be cleaned 110.

[0081] In detail, the laser cleaning device 10 generates a laser beam 16 via a laser beam generator 12 to selectively provide fixed or adjustable pulsed energy. For example, the laser cleaning device 10 can provide adjustable pulsed energy by selectively adjusting the scanning speed, pulse width, pulse output period, wavelength, repetition frequency, incident angle, penetration depth and / or thermal diffusion length of the laser beam 16. Generally, the shorter the wavelength of the laser beam 16, the higher the energy absorbed by the target 120 to be cleaned, and the faster the heating rate. In addition, the utility model can also provide selective cleaning effects by means of the laser beam 16, for example, only removing the target 120 to be cleaned on the area 110 to be cleaned, while retaining the remaining structures or materials on the area 110 to be cleaned. The laser beam provided by the laser cleaning device 10 is, for example, but not limited to, a pulsed nanosecond laser. If the pulse width of the laser beam 16 is greater than the nanosecond (ns) level, although the aggressiveness is stronger, the material selectivity is weaker. If the pulse width of the laser beam 16 is less than the nanosecond (ns) level, it belongs to cold ablation and its material specificity is low. The pulse width of the laser beam 16 used in the present invention is preferably in the nanosecond (ns) level, thereby having a higher heating and cooling frequency than other levels of pulse width, and having better material specificity. For example, the laser beam generator 12 of the laser cleaning device 10 can selectively use conventional commercial products, such as, but not limited to, Nd:YAG pulse laser source, Nd:YVO4 pulse laser source or KrF pulse laser source. Taking the Nd:YAG pulse laser source as an example, its wavelength is about 1,064nm, the frequency is about 20kHz, and the pulse width is about 150ns, but it is not limited to this. The wavelength generated by the laser beam generator 12 can also be, for example, 266nm or 532nm. For example, the moving speed range of the laser beam 16 is about 10 mm / sec to about 1,000 mm / sec, the wavelength range of the laser beam 16 is preferably about 266 nm to about 1,600 nm, the pulse width is about less than 1,000 ns, the repetition frequency range is about 30 Hz to about 10 MHz, the pulse energy (Pulse Energy, E) range is, for example, about 0.1 μJ to about 10,000 μJ, and the spot diameter range is, for example, about 0.5 μm to about 100 mm.

[0082] The reactive cleaning components provided by the gas or liquid cleaning device 20 of the present invention may be, for example, reactive gases and / or liquids, such as ozone gas (UV-Ozone) and / or ozone water (DI-Ozone), and may even selectively include hydrofluoric acid, thereby enhancing the cleaning effect, or reducing or replacing harmful chemicals used in traditional cleaning processes, or reducing possible adverse effects on objects. Among them, the reactive cleaning component may be, for example, ozone (O3) in gaseous form, which is used directly or in combination with other gases (such as hydrofluoric acid) or liquids (such as hydrofluoric acid solution or RCA cleaning agent) to perform cleaning steps on the area to be cleaned 110. Ozone can be formed or generated in various ways, including by being provided by a conventional commercial ozone generating device, which, for example, generates ozone by passing oxygen through an energy field (such as ultraviolet light, plasma or ion field). In addition, the reactive cleaning component of the present invention can also be selectively an aqueous solution containing ozone (commonly known as ozone water, DI-Ozone), which is used to clean the area to be cleaned 110 directly or in combination with other gases (such as hydrofluoric acid) or liquids (such as hydrofluoric acid solution or RCA cleaning agent), wherein the concentration of ozone in the DI aqueous solution ranges from about 1 ppm to about 300 ppm. For example, the gas or liquid reactive cleaning step (S220) of the present invention can be used, for example, to clean the target to be cleaned 120 for about 1 hour with ozone water having a concentration of about 30 ppm and a flow rate of about 2 lpm (liters per minute). In addition, the DI aqueous solution can also contain ozone cleaning auxiliary agents, such as carbonate and bicarbonate anions, and organic acids, such as formic acid, oxalic acid, acetic acid, and glycolic acid. For example, in the conventional process of removing photoresist by plasma etching combined with SPM cleaning solution, after removing most (about 99%) of the photoresist by plasma, the remaining 1% of the photoresist residue is removed by RCA cleaning agent. However, the composite cleaning step (S20) of the composite cleaning system of the present invention can replace the conventional RCA cleaning agent cleaning method by using a laser cleaning device to perform a laser reactive cleaning step (S210) and a gas or liquid cleaning device to perform a gas or liquid reactive cleaning step (S220), or replace part of the cleaning formula in the RCA cleaning agent cleaning method. For example, the present invention can replace the H2O2 in the SC-1 cleaning formula of the conventional RCA cleaning agent cleaning method with ozone water (DI-Ozone), or for example, replace the SPM cleaning solution (H2SO4 / H2O2 / H2O, i.e., Piranha cleaning solution) that requires high temperature (about 100 degrees Celsius to about 130 degrees Celsius) with diluted hydrofluoric acid (DHF) and ozone water (e.g., room temperature) to remove the remaining 1% of the photoresist residue. Even, the present invention can also replace the above-mentioned plasma etching method by using the laser reactive cleaning step (S210) to remove most (about 99%) of the photoresist. The volume ratio of hydrofluoric acid to ozone water ranges from about 1:1 to about 10:1, for example.

[0083] In the first embodiment, the composite cleaning system of the present invention performs a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) on the to-be-cleaned area 110 of the object 100 simultaneously, sequentially or in reverse order, so as to achieve the effect of auxiliary cleaning of the to-be-cleaned target 120. As mentioned above, the laser cleaning device 10 and the gas or liquid cleaning device 20 of the composite cleaning system of the present invention can be independent different devices or integrated into the same device, so that the present invention can selectively perform the above-mentioned laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) in different devices or in the same device.

[0084] In the first aspect of the first embodiment, the composite cleaning system of the present invention, for example, first uses a laser cleaning device 10 to generate a laser beam 16 to scan directly or indirectly provide pulsed energy to the area to be cleaned 110 of the object 100, so as to perform a laser reactive cleaning step (S210) on the area to be cleaned 110 of the object 100. Then, the gas or liquid cleaning device 20 performs a gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 that has been cleaned by the laser reactive cleaning step (S210). Since the laser cleaning device 10 has first performed a laser reactive cleaning step (S210) on the area to be cleaned 110 of the object 100, the present invention can enhance the cleaning effect of the gas or liquid reactive cleaning step (S220) on the target 120 to be cleaned in the area to be cleaned 110 by assisting the laser reactive cleaning step (S210).

[0085] In the second aspect of the first embodiment, the composite cleaning system of the present invention, for example, first performs a gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 using the gas or liquid cleaning device 20. Then, the laser cleaning device 10 generates a laser beam 16 to scan and directly or indirectly provide pulsed energy to the area to be cleaned 110 of the object 100, so as to perform a laser reactive cleaning step (S210) on the area to be cleaned 110 that has been cleaned by the gas or liquid reactive cleaning step (S220). Since the gas or liquid cleaning device 20 has first performed a gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 of the object 100, the present invention can enhance the cleaning effect of the laser reactive cleaning step (S210) on the target 120 to be cleaned in the area to be cleaned 110 by assisting the gas or liquid reactive cleaning step (S220).

[0086] In the third aspect of the first embodiment, the composite cleaning system of the present invention, for example, simultaneously uses the laser cleaning device 10 and the gas or liquid cleaning device 20 to perform a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 of the object 100. Since the laser cleaning device 10 and the gas or liquid cleaning device 20 simultaneously perform the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) on the area to be cleaned 110 of the object 100, the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) can assist each other to enhance the cleaning effect of the target 120 to be cleaned in the area to be cleaned 110.

[0087] In the composite cleaning process of the composite cleaning system of the present invention, the object 100 is carried on the carrier 200 of the composite cleaning system, for example. The carrier 200 can be various fixed or movable workbenches, and can be various fixed or rotating workbenches. The configuration or type of the carrier 200 is not limited, and can be determined according to the type of the object 100 to be cleaned and the configuration or type of the laser cleaning device 10 and the gas or liquid cleaning device 20. Taking the rotating workbench as an example, the carrier 200 can be selected from the group consisting of horizontal, vertical and inclined workbenches, such as the rotating platform used in the conventional commercial polishing step (e.g., mechanical polishing or chemical mechanical polishing (Chemical-Mechanical Polishing, CMP)). Alternatively, the gas or liquid cleaning device 20 is, for example, a conventional commercial photoresist stripping cleaning machine (e.g., a spray solvent tool (SST)), and the carrier 200 is a rotating carrier of the SST machine, thereby, for example, simultaneously performing a gas or liquid reactive cleaning step on the area to be cleaned 110 of the object 100 in a rotating state.

[0088] In other words, the composite cleaning step of the composite cleaning system of the present invention can selectively perform the above-mentioned laser reactive cleaning step (S210) on a part or all of the area to be cleaned 120 on the area to be cleaned 110 of the object 100, and selectively perform the gas or liquid reactive cleaning step (S220) on the above-mentioned part or all of the area to be cleaned 110 of the object. In other words, in the present invention, the cleaning areas cleaned by the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220) are preferably overlapped, but are not limited to being exactly the same. As long as the auxiliary cleaning effect can be provided, they all fall within the scope of protection claimed by the present invention. For example, in the composite cleaning step of the present invention, the laser cleaning device 10 may also perform the above-mentioned laser reactive cleaning step (S210) only on the target 120 to be cleaned on the area 110 to be cleaned, while the gas or liquid reactive cleaning step (S220) is to perform the gas or liquid reactive cleaning step (S220) on the area 110 to be cleaned including the target 120 to be cleaned.

[0089] In the hybrid cleaning system of the present invention, the laser cleaning device 10 can perform the laser reactive cleaning step ( S210 ) by, for example, etching cleaning method, liquid-assisted laser cleaning method and / or laser shock wave cleaning method. Taking the etching cleaning method as an example, when the laser reactive cleaning step (S210) of the composite cleaning process is performed, the object 100 to which the present invention is applicable is not limited to being located in an air environment. Regardless of whether the object 100 to be cleaned is located in a liquid environment or a gas environment, the present invention can directly irradiate (e.g., focus) the target 120 to be cleaned of the above-mentioned object 100 by the laser beam 16 generated by the laser cleaning device 10, so that the target 120 to be cleaned in the area 110 to be cleaned directly absorbs the pulsed energy of the laser beam 16 (e.g., short pulse) to generate ionization and leave the area 110 to be cleaned and / or, for example, weaken the bond (Van der Waals bond) strength between the target 120 to be cleaned and the object 100 or cause defects or instability, thereby facilitating the overall cleaning effect of the composite cleaning step (S20) on the area 110 to be cleaned. The liquid or gas may be the same as or different from the reactive cleaning component used in the gas or liquid reactive cleaning step (S220) described above. In addition, in the etching cleaning method, the laser beam 16 can be selectively irradiated directly on the intersection 19 (shadow interface) (such as metal impurities or particles) between the target 120 to be cleaned and the object 100. Figure 8As shown in FIG. 1 , due to the different material properties (e.g., thermal expansion coefficient) between the target 120 to be cleaned and the object 100, stress may be generated at the junction 19, which helps to separate the target 120 to be cleaned from the object 100. Although the laser beam 16 provided by the present invention can be directly irradiated above the target 120 to be cleaned, that is, the irradiation direction of the laser beam 16 is perpendicular to the object 100, it is not limited thereto. For example, Figure 8 As shown, in order to allow the junction 19 between the target 120 to be cleaned and the object 100 to effectively absorb the pulsed energy of the laser beam 16 (e.g., short pulse), the laser beam 16 may selectively irradiate the junction 19 between the target 120 to be cleaned (e.g., metal impurities or particles) and the object 100 at an inclined angle θ, so as to prevent the top of the target 120 to be cleaned from blocking the laser beam 16 from directly irradiating the above-mentioned junction 19. Alternatively, in the etching cleaning method, the laser beam 16 may also irradiate the target 120 to be cleaned, for example, from the back (reverse side), that is, the laser beam 16 preferably irradiates and penetrates the object 100 (e.g., a substrate with non-optical absorption), and then irradiates the bottom of the target 120 to be cleaned, for example, the junction 19 between the target 120 to be cleaned and the object 100. The irradiation direction of the laser beam 16 is, for example, different from the extension direction of the target 120 to be cleaned, for example, non-perpendicular to the object 100. In other words, the above-mentioned inclination angle ranges from about 89 degrees to about 179 degrees.

[0090] In the composite cleaning system of the present invention, the liquid-assisted laser cleaning method is taken as an example (please refer to Figure 2 ), if the object 100 to be cleaned is located in the liquid 25, the utility model can, for example, make the liquid 25 absorb the pulsed (e.g., short pulse) reactive energy of the laser beam 16, so as to produce a cleaning effect on the target 120 to be cleaned on the area 110 to be cleaned of the object 100 with the assistance of the liquid 25. For example, the laser beam 16 provided by the utility model can, for example, be directly focused to irradiate the liquid 25 (e.g., water or alcohol (e.g., isopropyl alcohol)) adjacent to (or near or around) the target 120 to be cleaned, and the explosion pressure wave (pressure wave) generated by the explosion evaporation of the liquid 25 due to the increase in temperature (overheating) can reduce or eliminate the bonding force between the target 120 to be cleaned and the object 100, so as to achieve a cleaning effect. Moreover, the utility model can also reduce the generation of thermal stress by heating the liquid 25. The above-mentioned liquid 25 can be the same as or different from the reactive cleaning component used in the above-mentioned gas or liquid reactive cleaning step (S220). Taking the liquid-assisted laser cleaning method to remove gold and tungsten particles (particle size of about μm level) on the surface of the silicon substrate as an example, the laser beam generator 12 can use a KrF pulse laser source, the pulse width of the laser beam 16 is about 30ns, the repetition frequency range is about 100Hz, and the pulse energy is about 0.3J / cm2 , with a wavelength of about 248nm. Taking the liquid-assisted laser cleaning method to remove aluminum oxide particles (Al2O3, with a particle size of about 60nm) on the surface of a silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 7ns, the repetition frequency range is about 8Hz, and the pulse energy is about 0.17J / cm 2 , with a wavelength of about 532nm.

[0091] In the composite cleaning system of the present invention, taking the laser shock wave cleaning method as an example, the present invention can, for example, focus the pulsed energy provided by the laser beam 16 at a focal position that is a distance (for example, adjacent to or near or around) from the target 120 to be cleaned, wherein the object 100 can, for example, be located in an air environment or a gas environment, so that the gas molecules at the focal position are ionized to form a rapidly expanding plasma to generate a plasma shock wave, which can be used to remove the target 120 to be cleaned. The gas in the gas environment can be the same as or different from the reactive cleaning component used in the gas or liquid reactive cleaning step (S220) described above. In short, the present invention can perform a laser reactive cleaning step (S210) on the target 120 to be cleaned by directly contacting (focusing) the laser beam 16 or indirectly contacting (focusing) the target 120 to be cleaned, and whether in a liquid environment or a gas environment, which is conducive to the cleaning effect of the composite cleaning step (S20) on the cleaning area 110. Taking the etching cleaning method or the laser shock wave cleaning method to remove silicon dioxide particles (such as fused silica particles with a particle size of about 5 μm) on the surface of the silicon substrate as an example, the laser beam generator 12 can use a KrF pulse laser source, the pulse width of the laser beam 16 is about 15 ns, the repetition frequency range is about 30 Hz, and the pulse energy is about 60 mJ / cm 2 , with a wavelength of about 248nm. Taking the etching cleaning method or the laser shock wave cleaning method to remove copper particles (particle size of about 1μm) on the surface of the silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 10ns, the repetition frequency range is about 10kHz, and the pulse energy is about 0.18 / 0.46mJ / cm 2 , with a wavelength of about 266 / 352nm. Taking the etching cleaning method or the laser shock wave cleaning method to remove the gold layer (thickness of about 48nm) deposited on the surface of the silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 100ns, the repetition frequency range is about 2kHz, and the pulse energy is about 10mJ / cm 2, with a wavelength of about 1,064nm. Taking the etching cleaning method or the laser shock wave cleaning method to remove polystyrene latex nanoparticles (particle size of about 300nm) from the surface of the silicon substrate as an example, the laser beam generator 12 can use a Nd:YAG pulse laser source, the pulse width of the laser beam 16 is about 6ns, and the pulse energy is about 100-600mJ / cm 2 , with a wavelength of about 1,064nm.

[0092] In the composite cleaning system of the present invention, the gas or liquid cleaning device 20 performs a gas or liquid reactive cleaning step (S220) to provide reactive cleaning components (e.g., reactive gas and / or liquid) for performing a cleaning step selected from the group consisting of a dry cleaning method and a wet cleaning method, wherein the gas or liquid reactive cleaning step (S220) is, for example, a cleaning step selected from the group consisting of an ozone cleaning method, a hydrofluoric acid cleaning method, and an RCA cleaning agent cleaning method on the to-be-cleaned area 110 of the object 100. For example, the above-mentioned ozone cleaning method may be, for example, a dry cleaning method using ozone gas (UV-Ozone) and / or a wet cleaning method using ozone water (DI-Ozone), wherein the concentration of ozone in the DI water solution ranges from about 1 ppm to about 300 ppm, and the cleaning temperature ranges from about 0 degrees Celsius to about 60 degrees Celsius. The above-mentioned hydrofluoric acid cleaning method can be, for example, a dry cleaning method containing hydrofluoric acid (HF) gas and / or a wet cleaning method containing hydrofluoric acid liquid (e.g., diluted hydrofluoric acid liquid), wherein the volume ratio of HF:H2O ranges from about 1:2 to about 1:10, and the cleaning temperature ranges from about 20 degrees Celsius to about 25 degrees Celsius. Hydrofluoric acid has the property of being able to dissolve silicon dioxide, so it can remove the oxide layer (e.g., native oxide layer) generated on the surface of the silicon substrate, and at the same time remove the particles and metal impurities adsorbed on the oxide layer. In addition, while removing the oxide layer, silicon-hydrogen bonds can be formed on the surface of the silicon substrate to make the silicon surface hydrophobic. The RCA cleaning agent cleaning method is, for example, to use SC-1 and SC-2 cleaning formulas, and may even selectively include the use of SPM cleaning solution (such as SC-3 cleaning formula), wherein the SC-1 cleaning formula is, for example, NH4OH / H2O2 / H2O, with a volume ratio ranging from about 1:1:5 to about 1:2:7, a cleaning time ranging from about 10 minutes to about 20 minutes, and a cleaning temperature ranging from about 65 degrees Celsius to about 80 degrees Celsius. The SC-1 cleaning formula is preferably used for alkaline oxidation to remove particles on the silicon substrate, and can oxidize and remove a small amount of organic matter (such as residual photoresist) and metal contamination such as Au, Ag, Cu, Ni, Cd, Zn, Ca, Cr, etc. on the surface. Controlling the cleaning temperature below 80 degrees Celsius helps reduce losses caused by the volatilization of ammonia and hydrogen peroxide; the SC-2 cleaning formula is, for example, HCl / H2O2 / H2O, with a volume ratio ranging from about 1:1:5 to about 1:2:8, a cleaning time ranging from about 10 minutes to about 20 minutes, and a cleaning temperature ranging from about 75 degrees Celsius to about 85 degrees Celsius; the SC-3 cleaning formula is, for example, H2SO4 / H2O2 / H2O, with a volume ratio of about 5:1:1, and a cleaning temperature range of about 120 degrees Celsius to about 280 degrees Celsius. The SC-3 cleaning formula has a high oxidizing ability, which can oxidize metals and dissolve them in the cleaning solution, and can oxidize organic matter to produce CO2 and H2O.The SC-3 cleaning formula can clean organic contamination and some metal impurities on the surface of the silicon substrate. However, when the organic contamination is particularly severe, the organic matter will be carbonized and difficult to remove.

[0093] Taking cleaning of substrates, FEOL, BEOL and packaged objects as an example, the present invention performs a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) to replace the conventional technology of only using the RCA cleaning agent cleaning method to clean the target 120. Among them, the gas or liquid reactive cleaning step (S220) of the composite cleaning step (S20) of the present invention can selectively use any one or more of the ozone cleaning method, the hydrofluoric acid cleaning method and the RCA cleaning agent cleaning method. Any combination of methods.

[0094] Figure 4 It is a schematic flow chart of a composite cleaning process of a composite cleaning system according to the second embodiment of the present utility model. Figure 5 Schematic diagram of a composite cleaning system according to a second embodiment of the present invention. Figure 5 (A) shows the grinding and polishing steps. Figure 5 (B) shows the laser reactive cleaning step. Figure 5 (C) shows a gas or liquid reactive cleaning step. Figure 4 and Figure 5 As shown, in the second embodiment of the present invention, in addition to the device shown in the first embodiment, the composite cleaning system of the present invention further includes a polishing device 50. The composite cleaning step (S20) of the present invention selectively further includes a polishing step (S230) of the to-be-cleaned area 110 of the object 100 by the polishing device 50 (e.g., a mechanical polishing device or a chemical mechanical polishing device), and then a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) are performed on the to-be-cleaned area 110 of the object 100 simultaneously, sequentially or in reverse order. Taking the polishing device 50 as a chemical mechanical polishing device as an example, the structure of the polishing device 50 includes a rotating platform 52, a polishing pad 54 and a polishing slurry supply source 56. The rotating platform 52 is used to drive the polishing pad 54 to rotate relative to the object 100 on the carrier 200, and the polishing slurry supply source 56 is used to supply polishing slurry 57 between the polishing pad 54 and the object 100, thereby performing a polishing step (S230) on the object 100. However, the utility model is not limited to this, and the utility model can also selectively perform a polishing step (S230) on the to-be-cleaned area 110 of the object 100 before, between or after performing the laser reactive cleaning step (S210) and the gas or liquid reactive cleaning step (S220).

[0095] Figure 6FIG. 1 is a flow chart of a composite cleaning process of a composite cleaning system according to a third embodiment of the present invention. Figure 6 (A) is the first process state. Figure 6 (B) is the second process state. Figure 7 Schematic diagram of a composite cleaning system according to a third embodiment of the present invention. Figure 7 (A) shows the step of providing plasma, Figure 7 (B) shows the grinding and polishing steps. Figure 7 (C) shows the laser reactive cleaning step. Figure 7 (D) shows a gas or liquid reactive cleaning step. Figure 6 and Figure 7 As shown, in the third embodiment of the present invention, in addition to the device shown in the second embodiment, the composite cleaning system of the present invention further includes a plasma device 60, for example, including a plasma source 62 and a chamber 64, wherein the chamber 64 is used to place the object 100, and the plasma source 62 is used to provide plasma 63 to the to-be-cleaned area 110 of the object 100 in the composite cleaning step S20. The plasma device 60 is, for example, a remote plasma device, and the plasma 63 is, for example, a remote plasma, but is not limited thereto. Figure 6 (A) Figure 7 (B) Figure 7 (C) and Figure 7 As shown in (D), before or after the laser cleaning device 10 performs the laser reactive cleaning step S210 or the gas or liquid cleaning device 20 performs the gas or liquid reactive cleaning step (S220), the plasma device 60 of the present invention can, for example, provide a plasma step (S240) to the area to be cleaned 110 of the object 100. In addition, as Figure 6 (B) and Figure 7 (A) to Figure 7As shown in (D), the composite cleaning step (S20) of the present invention optionally further includes before or after the polishing step (S230), for example, after the polishing step (S230), a plasma providing step (S240) is performed by a plasma device 60 to provide plasma 63 to the area 110 to be cleaned of the object 100, so that the area 110 to be cleaned of the object 100 has effects such as roughness reduction, small defect removal (crystal level), high temperature annealing and micro-growth epitaxy, and then simultaneously, sequentially or in reverse order, a laser reactive cleaning step (S210) and a gas or liquid reactive cleaning step (S220) are performed on the area 110 to be cleaned of the object 100. In the present invention, the use order (e.g., the arrows in the figure indicate the directions) and the matching method of the laser cleaning device 10, the gas or liquid cleaning device 20, the polishing device 50 and the plasma device 60 can be adjusted accordingly according to the actual application, such as the state of the object to be cleaned (i.e., the previous process before the composite cleaning process of the present invention is performed). For example, the present invention can perform the polishing step (S230) with a conventional commercial polishing slurry (e.g., adding aluminum oxide, silicon dioxide, spinel, cerium trioxide and zirconium oxide), or the present invention can perform the polishing step (S230) on the to-be-cleaned area 110 of the object 100 in an environment containing ozone or ozone water, for example, dissolving ozone or ozone water in the conventional commercial polishing slurry, thereby simultaneously performing the gas or liquid reactive cleaning step (S220) and the polishing step (S230) (e.g., mechanical polishing or chemical mechanical polishing, CMP), wherein the concentration of ozone in the DI aqueous solution is from about 1 ppm to about 300 ppm, depending on the to-be-cleaned target 120 to be cleaned. In addition, the DI aqueous solution may also contain ozone cleaning aids, such as carbonate and bicarbonate anions, and organic acids, such as formic acid, oxalic acid, acetic acid and glycolic acid.

[0096] When the composite cleaning system of the present invention performs different cleaning steps of the composite cleaning process (e.g., performing a laser reactive cleaning step (S210), performing a gas or liquid reactive cleaning step (S220), performing a polishing step (S230), and providing a plasma step (S240), the carrier 200 used to carry the object 100 can be the same or replaced with a different one. If the same one is used, the carrier 200 and the object 100 carried by it can be moved by a conveying system (not shown) such as a conveyor belt or a robot arm. The object 100 is moved from the previous cleaning device to the next cleaning device to perform a cleaning step. If they are different, the object 100 can be moved to different carriers 200 by a conveying system (not shown) such as a conveyor belt or a robot arm to perform a cleaning step. In other words, when the present invention uses a composite cleaning system to perform different cleaning steps of a composite cleaning process, if multiple cleaning devices are selectively integrated together, the use of the above-mentioned conveying system can be omitted, which helps to shorten the process cost, process time and improve production capacity.

[0097] In summary, the composite cleaning system of the present invention has the following advantages:

[0098] (1) The present invention adopts conventional software and programs and improves the hardware to overcome the problems caused by the hardware of the above-mentioned prior art. The present invention replaces the conventional technology of cleaning objects only by RCA cleaning agent cleaning method by using laser cleaning device to perform laser reactive cleaning step and gas or liquid cleaning device to perform gas or liquid reactive cleaning step, which can meet the increasingly stringent process cleanliness requirements.

[0099] (2) The present invention uses a laser cleaning device in combination with a gas or liquid cleaning device, which can significantly reduce the number of process steps, reduce water consumption, reduce the use and discharge of chemicals, shorten the process time and increase production capacity.

[0100] (3) The present invention uses a laser cleaning device in combination with a gas or liquid cleaning device, which has a good cleaning effect on various targets to be cleaned (such as organic matter, polymers, metal attachments, particles and native oxide layers), and the surface roughness is better than that of traditional standard cleaning procedures.

[0101] (4) The present invention uses a laser cleaning device to provide pulsed energy in combination with a gas or liquid cleaning device, and then in combination with a plasma device to provide plasma, which can further reduce the roughness of the area to be cleaned, remove small defects (crystal level), perform high temperature annealing, and perform micro-epitaxial growth.

[0102] (5) The utility model uses a laser cleaning device in combination with a gas or liquid cleaning device. The gas or liquid cleaning device uses ozone (UV-Ozone) or ozone water (DI-Ozone) during the gas or liquid reactive cleaning step to combine or replace the harmful chemicals in the traditional cleaning process, thereby reducing water consumption, reducing the use and discharge of chemicals, shortening the process time and increasing production capacity. The cleaning effect and surface roughness are better than those of the traditional standard cleaning procedure.

[0103] (6) The present invention uses the pulsed energy of a laser cleaning device to clean the area to be cleaned, so that the target to be cleaned located thereon is ionized and leaves the area after absorbing the high-energy light of the short laser pulse.

[0104] (7) The present invention uses a laser cleaning device in combination with a gas or liquid cleaning device. The reactive cleaning components used by the gas or liquid cleaning device in the gas or liquid reactive cleaning step can be ozone (gas or aqueous solution), ozone (gas or aqueous solution) and hydrofluoric acid (gas or aqueous solution), or RCA cleaning agent, all of which can meet the process cleanliness requirements. The present invention overcomes the problems caused by the use of other hardware for cleaning in the above-mentioned prior art by improving the hardware and relying on conventional software and programs.

[0105] The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or changes made to the present invention without departing from the spirit and scope of the present invention shall be included in the appended claims.

Claims

1. A composite cleaning system for performing a composite cleaning step on a to-be-cleaned area of ​​at least one object, characterized in that: Include: A carrier for carrying the object, wherein the object has at least one target to be cleaned located in the area to be cleaned of the object; A laser cleaning device for performing a laser reactive cleaning step on the area to be cleaned of the object; as well as A gas or liquid cleaning device is used to perform a gas or liquid reactive cleaning step on the area to be cleaned of the object, so that one of the laser cleaning device and the gas or liquid cleaning device can enhance a cleaning effect on the target to be cleaned on the area to be cleaned by the assistance of the other.

2. The composite cleaning system according to claim 1, characterized in that: The laser cleaning device and the gas or liquid cleaning device respectively perform the laser reactive cleaning step and the gas or liquid reactive cleaning step on the to-be-cleaned area of ​​the object simultaneously, sequentially or in reverse order in the composite cleaning step.

3. The composite cleaning system according to claim 1, characterized in that: The gas or liquid cleaning device is used to perform a cleaning step selected from the group consisting of ozone cleaning, hydrofluoric acid cleaning and RCA cleaning agent cleaning on the area to be cleaned of the object.

4. The composite cleaning system according to claim 3, characterized in that: The ozone cleaning method uses ozone water, ozone and / or hydrofluoric acid to clean the area to be cleaned of the object, the hydrofluoric acid cleaning method uses hydrofluoric acid to clean the area to be cleaned of the object, and the RCA cleaning agent cleaning method uses RCA cleaning agent to clean the area to be cleaned of the object.

5. The composite cleaning system according to claim 1, characterized in that: The gas or liquid cleaning device further comprises a tank, wherein the area to be cleaned of the object is subjected to the gas or liquid reactive cleaning step in the tank.

6. The composite cleaning system according to claim 3, characterized in that: The gas or liquid cleaning device further comprises a tank body, wherein the number of the objects is plural, and the plural objects are placed in the tank body at the same time to perform the gas or liquid reactive cleaning step.

7. The composite cleaning system according to claim 1, characterized in that: The gas or liquid cleaning device of the composite cleaning system further comprises an oscillating component for oscillating the area to be cleaned of the object while performing the composite cleaning step on the area to be cleaned of the object.

8. The composite cleaning system according to claim 1, characterized in that: The gas or liquid cleaning device of the combined cleaning system includes a temperature control and adjustment component for controlling and adjusting the temperature of the combined cleaning step when the combined cleaning step is performed on the to-be-cleaned area of ​​the object.

9. The composite cleaning system according to claim 1, characterized in that: The carrier is a rotating workbench for rotating the object, so that the gas or liquid cleaning device performs the gas or liquid reactive cleaning step on the area to be cleaned of the rotating object.

10. The composite cleaning system according to claim 1, characterized in that: The gas or liquid cleaning device includes a gas or liquid supply source, and the gas or liquid supply source is selected from the group consisting of an ozone water generating device, an ozone generating device, a hydrofluoric acid supply device and an RCA cleaning agent supply device.

11. The composite cleaning system according to claim 1, characterized in that: The composite cleaning system further comprises a polishing step for the area to be cleaned of the object before, between or after the laser cleaning device performs the laser reactive cleaning step and the gas or liquid cleaning device performs the gas or liquid reactive cleaning step.

12. The composite cleaning system according to claim 11, characterized in that: The invention also comprises a plasma device, wherein the plasma device provides a plasma to the area to be cleaned of the object before or after the polishing step.

13. The composite cleaning system according to claim 11, characterized in that: The composite cleaning step of the composite cleaning system performs the polishing step on the area to be cleaned of the object in an environment containing ozone or ozone water.

14. The composite cleaning system according to claim 1, characterized in that: The composite cleaning step of the composite cleaning system further includes using a plasma device to provide a plasma to the to-be-cleaned area of ​​the object.

15. The composite cleaning system according to claim 12 or 14, characterized in that: The plasma device is a remote plasma device, and the plasma is a remote plasma.

16. The composite cleaning system according to claim 1, characterized in that: The laser cleaning device generates a laser beam to provide a pulsed energy to the area to be cleaned of the object in a scanning manner.

17. The composite cleaning system according to claim 16, characterized in that: The laser cleaning device allows the target to be cleaned on the area to be cleaned of the object to absorb the pulse energy and to be separated from the area to be cleaned of the object during the laser reactive cleaning step.

18. The composite cleaning system according to claim 16, characterized in that: The laser cleaning device allows a liquid to absorb the pulse energy to generate an explosion pressure wave during the laser reactive cleaning step, thereby producing the cleaning effect on the target to be cleaned on the to-be-cleaned area of ​​the object with the assistance of the liquid.

19. The composite cleaning system according to claim 16, characterized in that: The laser cleaning device provides the pulsed energy to focus on a focal position at a distance from the target to be cleaned during the laser reactive cleaning step, so as to produce the cleaning effect on the target to be cleaned on the area to be cleaned through the plasma shock wave formed at the focal position.

20. The composite cleaning system according to claim 16, wherein: The laser cleaning device provides the adjustable pulsed energy to the to-be-cleaned area of ​​the object via the laser beam during the laser reactive cleaning step.

21. The composite cleaning system according to claim 16, characterized in that: The laser beam is a pulsed nanosecond laser with a wavelength of 1,064 nm.

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