Reflecting lamp holder, wafer heating assembly and epitaxial growth equipment

Abstract

The utility model discloses a reflector lamp holder, a wafer heating assembly and epitaxial growth equipment. The wafer heating assembly comprises a reflector lamp holder, a wafer heating element and a wafer heating element, a lamp holder body of the reflecting lamp holder is divided into at least two areas in the circumferential direction. A first reflection groove, a second reflection groove,... an ith reflection groove are formed in each area along the radial direction of the lamp holder body from the edge to the center of the lamp holder body; the shapes of the cross sections of the i reflection grooves in the adjacent areas are different, and the i reflection grooves in the adjacent areas are arranged in a staggered manner; and at least one heating lamp is arranged in each reflecting groove. According to the utility model, the reflection direction of each i-th reflection groove to infrared heat radiation is adjusted, the transmission path of the infrared heat radiation is accurately controlled, the temperatures of different positions on the surface of the wafer are further adjusted, and the temperature uniformity of the surface of the wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and in particular to a reflective lamp holder, a wafer heating component and epitaxial growth equipment. Background Art

[0002] Chemical vapor deposition (CVD) technology is widely used in the field of semiconductor manufacturing, for example, it can be used in the field of epitaxial layer growth. The epitaxial layer growth is the process of growing a single crystal thin film on a substrate such as a wafer or a substrate. During the epitaxial layer growth process, the wafer is placed on a pedestal in a reaction chamber, and a heating component is arranged above the reaction chamber to radiate heat to the wafer.

[0003] Since the growth rate of the epitaxial layer is extremely sensitive to the heating temperature, the uneven distribution of the radiation temperature of the heating component will lead to different growth rates at different positions of the wafer, thereby affecting the uniformity of the thickness of the epitaxial layer growth. Therefore, there is an urgent need for a heating component that can adjust the temperature at different positions on the wafer surface to improve the uniformity of the temperature distribution on the wafer surface. Utility Model Content

[0004] The purpose of the utility model is to provide a reflective lamp holder, a wafer heating component and an epitaxial growth device, which staggers adjacent reflective grooves on the reflective lamp holder, and adjusts the cross-sectional shapes of adjacent reflective grooves according to requirements, so that the cross-sectional shapes of adjacent reflective grooves are different, thereby adjusting the position of the heat radiation reflected by the reflective grooves on the wafer surface, thereby achieving precise control of the temperature of wafer epitaxial growth and ensuring the uniformity of wafer epitaxial growth. In order to achieve the above purpose, the utility model provides a reflective lamp holder, which includes: a lamp holder body; the lamp holder body is divided into at least two areas along the circumferential direction; in each area, a first reflective groove, a second reflective groove... an i-th reflective groove are arranged along the radial direction of the lamp holder body from the edge to the center of the lamp holder body; the cross-sectional shapes of each i-th reflective groove in the adjacent areas are different, and each i-th reflective groove in the adjacent areas is staggered.

[0005] Preferably, the offset distance of each i-th reflective groove in the adjacent area is 0.1-10 mm.

[0006] Preferably, the heights of a plurality of reflective grooves arranged along the radial direction of the lamp holder body in the same area are distributed in a stepped manner.

[0007] Preferably, the heights of the reflective grooves arranged along the radial direction of the lamp holder body in the same area increase sequentially from the edge to the center of the lamp holder body.

[0008] Preferably, the cross-sectional shapes of a plurality of reflective grooves arranged along the radial direction of the lamp holder body in the same area are different.

[0009] Preferably, the heights of the i-th reflective grooves in the adjacent regions are different.

[0010] The utility model also provides a wafer heating component, which is characterized by comprising: the above-mentioned reflective lamp holder; at least one heating lamp is arranged in each of the reflective grooves.

[0011] Preferably, the cross-section of each of the reflective grooves is in the shape of an arc.

[0012] Preferably, the arc shape is a part of the minor axis arc of an ellipse, the first focus of the ellipse where the arc shape of each reflective groove is located is located on the heating lamp, and the second foci of the ellipses where the arc shapes of multiple reflective grooves are located are located in the same plane.

[0013] Preferably, a line connecting the elliptical foci corresponding to each of the reflective grooves forms an angle with the wafer surface, and the angles corresponding to the i-th reflective grooves in adjacent areas are not equal.

[0014] Preferably, the angle range between the included angles corresponding to the i-th reflective grooves in the adjacent areas is 60-150°.

[0015] Preferably, the angle formed by the connection line of the ellipse focus corresponding to each of the reflective grooves arranged along the radial direction of the lamp holder body in the same area and the wafer surface increases from the edge to the center of the lamp holder body.

[0016] Preferably, the heights of the heating lamps in the i-th grooves in adjacent areas are inconsistent.

[0017] Preferably, the heights of the heating lamps in a plurality of reflective grooves arranged along the radial direction of the lamp holder body in the same area are distributed in a stepped manner.

[0018] Preferably, a linear groove is provided at the center position of the inner surface of the lamp holder body, at least one heating lamp is provided in the linear groove, and the height of the heating lamp is higher than the height of any heating lamp in the reflective groove.

[0019] Preferably, the shape of each heating lamp in the reflective groove matches the shape of the reflective groove and extends along the direction of the reflective groove; and / or the heating lamp in the reflective groove is a linear lamp, and the linear lamps are arranged in sequence along the reflective groove.

[0020] Preferably, it further comprises a reflective tube extending downward along the circumferential edge of the lamp holder body.

[0021] Preferably, the reflective tube is made of metal.

[0022] Preferably, the inner surface of the reflective tube is plated with a reflective layer, and the reflective layer is made of one or more of gold, silver or aluminum.

[0023] The utility model also provides an epitaxial growth device, which includes: a reaction chamber; the side wall of the reaction chamber is provided with an air inlet and an air outlet for inputting and discharging process gases; a base assembly, which is arranged inside the reaction chamber, and includes a wafer tray and a driving device arranged below the wafer tray; the wafer tray is used to support the wafer; the driving device drives the wafer tray to rise and fall and rotate; the above-mentioned wafer heating assembly is arranged above the outside of the reaction chamber to heat the wafer by thermal radiation.

[0024] Preferably, a preheating ring is provided on the circumferential periphery of the wafer tray to heat the process gas input from the gas inlet.

[0025] Preferably, the first focus of the ellipse where the arc shape of each reflective groove is located is located on the heating lamp in the corresponding reflective groove, and the second focus of the ellipse where the arc shape of each reflective groove is located is located on the wafer surface.

[0026] Preferably, the top cover of the reaction chamber is made of quartz with an arc-shaped cross section, so that the heat radiation of the wafer heating assembly passes through the top cover to heat the wafer.

[0027] Preferably, the arc surface formed by the heating lamps arranged in a stepped manner on the reflective lamp holder is similar to the arc surface of the top cover, and the height difference of the arc surface of the top cover from the edge of the top cover to the center of the top cover ranges from 10 to 50 mm.

[0028] Compared with the prior art, the technical solution of the utility model has at least the following advantages:

[0029] The reflective lamp holder, wafer heating assembly and epitaxial growth equipment of the utility model adjust the reflection direction of each i-th reflective groove to infrared thermal radiation by arranging i-th reflective grooves with different cross-sectional shapes in adjacent areas on the inner surface of the reflective lamp holder, thereby achieving precise control of the path of the infrared thermal radiation.

[0030] At the same time, the i-th reflection grooves in adjacent areas are staggered so that the i-th reflection grooves in adjacent areas are not in the same circle. The infrared thermal radiation is guided to different positions on the wafer through the staggered i-th reflection grooves, thereby adjusting the transmission direction of the infrared thermal radiation and then adjusting the temperature at different positions on the wafer surface, thereby increasing the number of adjustable heating areas and improving the temperature uniformity of the wafer surface.

[0031] Furthermore, the reflective grooves on the inner surface of the reflective lamp holder and the heating lamps in the reflective grooves are distributed in a stepped manner, so that the inner surface of the reflective lamp holder forms an arc surface similar to the top cover of the reaction chamber, thereby increasing the heating efficiency of the heating lamps arranged in the reflective grooves, and improving the control accuracy of the reflection path of the heating lamps. At the same time, it also improves the cooling uniformity of the top cover by the cooling air transmitted from the reflective lamp holder, thereby improving the cooling efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 It is a structural schematic diagram of an epitaxial growth device in the prior art;

[0033] Figure 2 It is a cross-sectional schematic diagram of a first embodiment of a wafer heating assembly of the utility model;

[0034] Figure 3 It is a bottom view of the first embodiment of the wafer heating assembly of the utility model;

[0035] Figure 4 It is a bottom view of the second embodiment of the wafer heating assembly of the utility model;

[0036] Figure 5 It is a bottom view of the third embodiment of the wafer heating assembly of the present utility model;

[0037] Figure 6 It is a cross-sectional schematic diagram of a fourth embodiment of a wafer heating assembly of the present utility model;

[0038] Figure 7 It is a bottom view of a fourth embodiment of a wafer heating assembly of the present utility model;

[0039] Figure 8 It is a structural schematic diagram of the epitaxial growth equipment of the utility model. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all of the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the utility model.

[0041] It should be noted that, in this article, the terms "include", "comprises", "has" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "includes..." or "comprising..." do not exclude the existence of other elements in the process, method, article or terminal device including the elements.

[0042] It should be noted that the drawings are all in a very simplified form and use inaccurate ratios. In the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. They are only used to conveniently and clearly assist in explaining the purpose of an embodiment of the present invention.

[0043] Figure 1 It is a schematic diagram of the structure of the epitaxial growth equipment in the prior art, such as Figure 1 As shown, the epitaxial growth device 100 includes a reaction chamber 102 for processing a wafer W; the reaction chamber 102 includes a side wall 121, a top cover 122 disposed above the side wall 121, and a bottom cover 123 disposed below the side wall 121. A base assembly 103 is disposed in the reaction chamber 102, and the base assembly 103 includes a wafer tray 131, and the upper surface of the wafer tray 131 is used to support the wafer W. The wafer tray 131, the side wall 121, the top cover 122 and the bottom cover 123 enclose a processing space 124 as a process reaction area. An air inlet 1211 and an air outlet 1212 are provided on the side wall 121, and the air inlet 1211 is used to input process gas into the processing space 124 for deposition and other processes, and the air outlet 1212 is used to discharge the gas after the reaction. A driving device 132 is arranged below the wafer tray 131 for driving the wafer tray 131 to rise and fall and rotate; a wafer heating assembly 101 is arranged above the outside of the top cover 122, and a heating lamp group 104 is arranged below the outside of the bottom cover 123. The wafer heating assembly 101 and the heating lamp group 104 both emit infrared heat radiation outward. Since the top cover 122 and the bottom cover 123 are both made of materials that are permeable to infrared heat radiation, for example, the optional material is quartz, the wafer heating assembly 101 and the heating lamp group 104 can heat the wafer W through the top cover 122 and the bottom cover 123 respectively, thereby realizing epitaxial deposition of process gas on the upper surface of the wafer W.

[0044] Further, if Figure 1As shown, the wafer heating assembly 101 in the prior art includes a reflective lamp holder 111, and the inner surface of the reflective lamp holder 111 is evenly provided with reflective grooves 112 with the same cross-sectional shape, and the reflective grooves 112 are arranged in concentric circles along the radial direction of the reflective lamp holder 111; a heating lamp 113 is arranged in each reflective groove 112, and the heating lamp 113 emits infrared heat radiation outward, a part of the infrared heat radiation directly passes through the top cover 122 to be transmitted to the upper surface of the wafer W, and another part of the infrared heat radiation is reflected by the reflective groove 112 and then passes through the top cover 122 to be transmitted to the On the upper surface, since the cross-sectional shapes of the reflective grooves 112 are all the same and are arranged in concentric circles, and the wafer W rotates driven by the wafer tray 131, the corresponding heating areas formed by each heating lamp 113 on the surface of the wafer W are concentrically arranged circular rings, resulting in the heating areas that can be flexibly adjusted by each heating lamp 113 during the process not meeting the requirements. For example, local hot spots or cold spots on the wafer W are difficult to flexibly adjust through the existing heating lamps and reflective lamp holders, which leads to uneven temperature distribution on the wafer W, thereby reducing the uniformity of the epitaxial layer growth of the wafer W.

[0045] In view of the above-mentioned defects, the utility model discloses a wafer heating component, referring to Figure 2 and Figure 3 As shown, the wafer heating component 201 includes: a reflective lamp holder 211; the inner surface of the lamp holder body 2111 of the reflective lamp holder 211 (i.e., the surface facing the top cover 121) is divided into at least two areas along the circumferential direction; in each area, a plurality of reflective grooves are arranged along the radial direction of the lamp holder body 2111 from the edge to the center of the lamp holder body 2111, which are respectively recorded as the first reflective groove, the second reflective groove...the i-th reflective groove; the cross-sectional shapes of each i-th reflective groove in the adjacent areas are different, and the i-th reflective grooves in the adjacent areas are staggered, that is, there is a certain staggered distance between the connecting positions of the i-th reflective grooves in the adjacent areas; at least one heating lamp 214 is arranged in each of the i-th reflective grooves, and each heating lamp extends along the i-th reflective groove. By setting i-th reflection grooves with different cross-sectional shapes in adjacent areas on the inner surface of the lamp holder body 2111, the reflection direction of each i-th reflection groove to infrared thermal radiation is adjusted, and at the same time, the i-th reflection grooves in adjacent areas are staggered so that the i-th reflection grooves in adjacent areas are not in the same circle. The infrared thermal radiation is guided to different positions on the wafer W through the i-th reflection grooves that are staggered with each other, thereby adjusting the temperature of different positions on the surface of the wafer W and improving the temperature uniformity of the surface of the wafer W.

[0046] Specifically, Figure 2 and Figure 3The figures are a cross-sectional view and a bottom view of the first embodiment of the utility model, respectively. In the first embodiment, the inner surface of the lamp holder body 2111 is divided into a first area 212a and a second area 212b; in the first area 212a, a first area first reflection groove 213a, a first area second reflection groove 213b, a first area third reflection groove 213c and a first area fourth reflection groove 213d are arranged along the radial direction of the lamp holder body 2111; in the second area 212b, a second area first reflection groove 213e, a second area second reflection groove 213f, a second area third reflection groove 213g and a second area fourth reflection groove 213h are arranged along the radial direction of the lamp holder body 2111. At least two connection holes 215 are arranged in each reflection groove, and the connection holes 215 are arranged from the bottom of the reflection groove through the lamp holder body 2111, so that the electrical connector for connecting the heating lamp 214 can be connected to the heating lamp 214 through the connection hole 215, and the heating lamp 214 is fixed in the corresponding reflection groove. In some embodiments, only one heating lamp 214 matching the shape of the reflecting groove is disposed in each reflecting groove, and the heating lamp 214 extends along the direction of the reflecting groove; in other embodiments, the heating lamp 214 is a linear lamp, and the linear lamps are disposed in sequence along the reflecting groove.

[0047] The cross-sectional shape of each of the reflective grooves is an arc shape, and the arc shape may be a part of an ellipse, a circle, a parabola, a hyperbola or other suitable curved shapes. Figure 2 As shown, the arc shape corresponding to the cross-section of the first reflection groove 213a in the first area, the first reflection groove 213e in the second area, the second reflection groove 213b in the first area, the second reflection groove 213f in the second area, the third reflection groove 213c in the first area, the third reflection groove 213g in the second area, and the fourth reflection groove 213d in the first area and the fourth reflection groove 213h in the second area is a part of the short axis arc of the ellipse, and the first focus of the ellipse where the arc shape of each reflection groove is located is located on the heating lamp 214, and the second focus of the ellipse where the arc shape of the multiple reflection grooves is located is located in the same plane. In this embodiment, the same plane where the second focus of the ellipse where each reflection groove is located is the surface of the wafer W.

[0048] Since the cross-sectional shapes of the i-th reflective grooves in the adjacent regions are different, the i-th reflective grooves in the adjacent regions guide the infrared heat radiation to different positions on the wafer W in different directions and / or directions asymmetric to each other. Figure 2As shown, in this first embodiment, the first area first reflection groove 213a in the first area 212a and the second area first reflection groove 213e in the second area 212b have different cross-sectional shapes, the first area second reflection groove 213b in the first area 212a and the second area second reflection groove 213f in the second area 212b have different cross-sectional shapes, the first area third reflection groove 213c in the first area 212a and the second area third reflection groove 213g in the second area 212b have different cross-sectional shapes, and the first area fourth reflection groove 213d in the first area 212a and the second area fourth reflection groove 213h in the second area 212b have different cross-sectional shapes.

[0049] Furthermore, the cross-sectional shapes of the plurality of reflective grooves arranged in the radial direction of the lamp holder body 2111 in the same region are different, so that the reflective grooves in the same region guide the infrared heat radiation to different positions in the radial direction of the wafer W in directions that are not parallel to each other. Figure 2 As shown, the first to fourth reflecting grooves 213a-213d of the first area arranged along the radial direction of the lamp holder body 2111 in the first area 212a all have different cross-sectional shapes; the first to fourth reflecting grooves 213e-213h of the second area arranged along the radial direction of the lamp holder body 2111 in the second area 212b also all have different cross-sectional shapes, so that the infrared heat radiation reflected by each reflecting groove is transmitted to different positions in the radial direction of the wafer W.

[0050] Furthermore, the line connecting the elliptical foci corresponding to each of the reflective grooves forms an angle with the surface of the wafer W, and the angles corresponding to the i-th reflective grooves in adjacent areas are not equal, so that the i-th reflective grooves in different areas guide the infrared heat radiation to different positions on the wafer W, thereby adjusting the temperature uniformity on the wafer W.

[0051] Specifically, in the first embodiment, the wafer W is divided into two regions corresponding to the first region 212a and the second region 212b of the inner surface of the lamp holder body 2111. Further, the region of the wafer W corresponding to the first region 212a is divided into four heating regions along its radial direction, namely, the first region first heating region S1-1, the first region second heating region S2-1, the first region third heating region S3-1 and the first region fourth heating region S4-1, and the infrared heat radiation center of each heating region is W1-1, W2-1, W3-1 and W4-1 respectively; similarly, the region of the wafer W corresponding to the second region 212b is divided into four heating regions along its radial direction, namely, the second region first heating region S1-2, the second zone second heating zone S2-2, the second zone third heating zone S3-2 and the second zone fourth heating zone S4-2, the infrared heat radiation center of each heating zone is W1-2, W2-2, W3-2, W4-2 respectively, that is, the infrared heat radiation center of each heating zone is the focus of the ellipse corresponding to the cross-section of each reflective groove on the surface of the wafer W, so that the first heating zone to the fourth heating zone completely cover the upper surface of the wafer W, to ensure that the infrared heat radiation of the wafer heating assembly 201 can cover the entire wafer surface.

[0052] At the same time, if Figure 2 As shown, the infrared radiation centers W4-1 and W4-2 of S4-1 and S4-2 corresponding to the first area 212a and the second area 212b respectively are located on the wafer tray 131, so that a part of S4-1 and S4-2 covers the edge of the wafer W, and the other part covers the wafer tray 131, thereby ensuring the temperature consistency of the wafer edge and the wafer tray, thereby improving the uniformity of the wafer epitaxial growth.

[0053] Further, in the first embodiment, if Figure 2As shown, in the first region 212a, the line connecting the elliptical foci corresponding to the cross section of the first reflecting groove 213a in the first region (i.e., the line connecting the heating lamp 214 and the infrared heat radiation center W1-1 in the first reflecting groove 213a in the first region) forms a first angle A1 with the surface of the wafer W. Similarly, the second to third angles A2 to A4 are formed between the line connecting the elliptical foci corresponding to the second to fourth reflecting grooves 213b to 213d in the first region and the surface of the wafer W. Similarly, in the second region 212b, the first The line connecting the elliptical foci corresponding to the cross-section of the reflection groove 213e (i.e., the line connecting the heating lamp and the infrared heat radiation center W1-2 in the first reflection groove 213e of the second area) forms a first angle B1 with the surface of the wafer W. Similarly, the second to third angles B2 to A4 are formed between the line connecting the elliptical foci corresponding to the second to fourth reflection grooves 213f to 213h in the second area and the surface of the wafer W, thereby obtaining the reflection paths of the infrared heat radiation corresponding to the various reflection grooves in the first area 212a and the second area 212b.

[0054] Specifically, Figure 2 As shown, since the angles corresponding to the i-th reflection grooves in adjacent areas are not equal, that is, A1≠B1, A2≠B2, A3≠B3, A4≠B4, the first reflection groove 213a in the first area 212a focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the first angle A1 to S1-1 on the wafer W, the second reflection groove 213b in the first area focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the second angle A2 to S2-1 on the wafer W, the third reflection groove 213c in the first area focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the third angle A3 to S3-1 on the wafer W, and the fourth reflection groove 213d in the first area focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the fourth angle A4 to S4-1 on the wafer W. Similarly, the first reflection groove 213e of the second area 212b focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the first angle B1 to S1-2 on the wafer W, the second reflection groove 213f of the second area focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the second angle B2 to S2-2 on the wafer W, the third reflection groove 213g of the second area focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the third angle B3 to S3-2 on the wafer W, and the fourth reflection groove 213h of the second area focuses the infrared heat radiation of the heating lamp 214 and reflects it along the direction of the fourth angle B4 to S4-2 on the wafer W.

[0055] Furthermore, the angle range between the angles corresponding to the i-th reflection grooves in the adjacent areas is 60-150°; through the angular relationship between the angles, a reflection transmission path of infrared thermal radiation that complements each other is formed, so that the infrared thermal radiation reflected by each reflection groove can completely cover the surface of the wafer W, avoiding the existence of areas on the wafer W that are not illuminated by the infrared thermal radiation.

[0056] As an optional embodiment, the angle formed by the connection line between the heating lamp 214 in each of the reflective grooves radially arranged along the lamp holder body 2111 in the same area and the wafer surface and the wafer surface increases from the edge to the center of the lamp holder body 2111 to adjust the position of the infrared heat radiation on the upper surface of the wafer W. Specifically, in the first area 212a, A4>A3>A2>A1; in the second area 212b, B4>B3>B2>B1.

[0057] Further, if Figure 2 and Figure 3 As shown, the misalignment distances between the first reflective groove 213a of the first area, the first reflective groove 213e of the second area, the second reflective groove 213b of the first area, the second reflective groove 213f of the second area, the third reflective groove 213c of the first area, the third reflective groove 213g of the second area, and the fourth reflective groove 213d of the first area, and the fourth reflective groove 213h of the second area in the first area 212a and the second area 212b are 0.1-10mm, so that the distances from each reflective groove in the first area 212a to the center of the lamp holder body 2111 are not equal to the distances from each reflective groove in the second area 212b to the center of the lamp holder body 2111.

[0058] Specifically, Figure 2As shown, the projection positions of the heating lamps 214 in the first area first reflection groove 213a, the first area second reflection groove 213b, the first area third reflection groove 213c, and the first area fourth reflection groove 213d in the first area 212a are R1-1, R1-1, R3-1, and R4-1 to the center of the lamp holder body 2111, respectively. The projection positions of the heating lamps 214 in the first area first reflection groove 213a, the first area second reflection groove 213b, the first area third reflection groove 213c, and the first area fourth reflection groove 213d in the second area 212a are R1-1, R1-1, R3-1, and R4-1 to the center of the lamp holder body 2111, respectively. The projection positions of the heating lamps 214 in the third reflection groove 213g of the first region and the fourth reflection groove 213h of the second region on the corresponding reflection grooves are R1-2, R2-2, R3-2, and R4-2, respectively. Since the reflection grooves in the first region 212a and the second region 212b are mutually misaligned, R1-1≠R1-2, R2-1≠R2-2, R3-1≠R3-2, and R4-1≠R4-2 in the first region 212a and the second region 212b are not arranged in the same circular ring, so that the infrared heat radiation reflected by the i-th reflection groove in the adjacent regions is guided to different positions on the wafer W, thereby adjusting the temperature of different positions on the surface of the wafer W and improving the temperature uniformity of the surface of the wafer W.

[0059] Among them, Figure 2 As shown, the heights of the reflective grooves 213a~213d arranged radially along the lamp holder body 2111 in the first area 212a are distributed in a stepped manner; the heights of the reflective grooves 213e~213h arranged radially along the lamp holder body 2111 in the second area 212b are also distributed in a stepped manner, so that the infrared heat radiation reflected by each reflective groove in the same area is guided to different positions in the radial direction of the wafer W.

[0060] Further, according to the heating requirements of actual applications, in the first embodiment, the heights of the first to fourth reflecting grooves 213a to 213d of the first region radially arranged along the lamp holder body 2111 in the first region 212a increase sequentially from the edge to the center of the lamp holder body 2111; similarly, the heights of the first to fourth reflecting grooves 213e to 213h of the second region radially arranged along the lamp holder body 2111 in the second region 212b increase sequentially from the edge to the center of the lamp holder body 2111. Since the distance from the heating lamp 214 in each reflecting groove to the inner wall of the corresponding reflecting groove is equal, the height of the heating lamp 214 is the same as the stepped distribution of the reflecting groove, that is, in the first embodiment, as Figure 2As shown, the distance relationship between the corresponding heating lamps 214 in the first to fourth reflecting grooves 213a~213d of the first area within the first area 212a and the upper surface of the lamp holder body 2111 is H1-1>H2-1>H3-1>H4-1, and the distance relationship between the heating lamps 214 in the first to fourth reflecting grooves 213e~213h of the second area within the second area 212b and the upper surface of the lamp holder body 2111 is H1-2>H2-2>H3-2>H4-2, so that the infrared heat radiation reflected by each reflecting groove in the first area and the second area can be guided to different positions in the radial direction of the wafer W.

[0061] Further, each i-th reflective groove in the adjacent region has a different height, so that the infrared heat radiation reflected by each reflective groove can be better guided to different positions in the radial direction of the wafer W. Specifically, in the first embodiment, the height of the first region first reflective groove 213a in the first region 212a is not equal to the height of the second region first reflective groove 213e in the second region 212b, the height of the first region second reflective groove 213b in the first region 212a is not equal to the height of the second region second reflective groove 213f in the second region 212b, the height of the first region third reflective groove 213c in the first region 212a is not equal to the height of the second region third reflective groove 213g in the second region 212b, and the height of the first region fourth reflective groove 213d in the first region 212a is not equal to the height of the second region fourth reflective groove 213h in the second region 212b. Similarly, the distances from the heating lamp 214 in each reflective groove in the first area 212a and the second area 212b to the upper surface of the lamp holder body 2111 are not equal, that is, H1-1≠H1-2, H2-1≠H2-2, H3-1≠H3-2, H4-1≠H4-2.

[0062] In this first embodiment, if Figure 2 As shown, the wafer heating assembly 201 further includes a reflective tube 216 extending downward along the circumferential edge of the lamp holder body 2111, which is used to limit infrared heat radiation within the processing space. The lamp holder body 2111 and the reflective tube 216 are made of metal materials, such as stainless steel, aluminum or copper. A reflective layer is plated on the inner surface of the lamp holder body 2111 and the inner surface of the reflective tube 216, and the reflective layer is made of one or more of gold, silver or aluminum to increase the reflectivity of the reflective groove and the reflective tube, and improve the reflection efficiency of infrared heat radiation.

[0063] like Figure 4 As shown, Figure 43 is a bottom view of a second embodiment of a wafer heating assembly 301 of the utility model. In the second embodiment, the inner surface of the lamp holder body 3111 of the reflective lamp holder 311 is divided into three areas, namely a first area 312a, a second area 312b and a third area 312c; in the first area 312a, a first area first reflective groove 313a, a first area second reflective groove 313b, a first area third reflective groove 313c and a first area fourth reflective groove 313d are arranged along the radial direction of the lamp holder body 3111. 13d; in the second region 312b, a second region first reflection groove 313e, a second region second reflection groove 313f, a second region third reflection groove 313g and a second region fourth reflection groove 313h are arranged along the radial direction of the lamp holder body 3111; in the third region 312c, a third region first reflection groove 313m, a third region second reflection groove 313n, a third region third reflection groove 313p and a third region fourth reflection groove 313q are arranged along the radial direction of the lamp holder body 3111. It should be noted that the shape and position relationship of each i-th reflection groove in the same region in the second embodiment are the same as those in the first embodiment; the shape and position relationship of each i-th reflection groove in adjacent regions are the same as those in the first embodiment, which will not be repeated here.

[0064] The second embodiment illustrates that the number of area divisions of the inner surface of the lamp holder body 3111 of the reflective lamp holder 211 can be adjusted according to actual needs. As long as the i-th reflective grooves in adjacent areas have different cross-sectional shapes and the i-th reflective grooves in adjacent areas are staggered, the reflection path of each reflective groove to infrared thermal radiation can be controlled, thereby adjusting the temperature at different positions on the surface of the wafer W.

[0065] like Figure 5As shown, it is a bottom view of the third embodiment of the wafer heating component 401 of the utility model. In the third embodiment, the inner surface of the lamp holder body 4111 of the reflective lamp holder 411 is divided into four areas, namely the first area 412a, the second area 412b, the third area 412c and the fourth area 412d; wherein, the first area 412a and the third area 412c are symmetrical about the center of the lamp holder body 4111, and the second area 412b and the fourth area 412d are symmetrical about the center of the lamp holder body 4111; in the third embodiment, each reflective groove at the same radius of the first area 412a and the third area 412c can be set to a reflective groove with the same shape relationship and position relationship, and each reflective groove at the same radius of the second area 412b and the fourth area 412d can be set to a reflective groove with the same shape relationship and position relationship; because the reflective grooves with the same shape relationship and position relationship are arranged at intervals, it is formed that the i-th reflective grooves in adjacent areas have different cross-sectional shapes, and the i-th reflective grooves in adjacent areas are staggered. The wafer heating component 401. In the third embodiment, the shapes and positional relationships of each i-th reflection groove in the same area with the same shape relationship and positional relationship are the same as those in the first embodiment; the shapes and positional relationships of each i-th reflection groove in adjacent areas are the same as those in the first embodiment, and will not be repeated here.

[0066] It should be noted that in the third embodiment, the reflective grooves in the four areas on the inner surface of the lamp holder body 4111 of the reflective lamp holder 411 can also be set to have different cross-sectional shapes, such as the cross-sectional shapes and position heights of the reflective grooves in each area in the second embodiment are different.

[0067] like Figure 6 and Figure 7 As shown, Figure 6 and Figure 7 They are respectively a cross-sectional view and a bottom view of the fourth embodiment of the wafer heating assembly 501 of the utility model. Compared with the first embodiment, a linear groove 517 is provided along the center position of the inner surface of the reflective lamp holder 511, and the heating lamp 514 is provided in the linear groove 517, and the height of the heating lamp 514 is higher than the height of any heating lamp 514 in the reflective groove. Specifically, in the fourth embodiment, the linear groove 517 is provided at the center of the inner surface of the reflective lamp holder 511 along the diameter direction of the reflective lamp holder 511, and the linear groove 517 is located between the first area 512a and the second area 512b, so as to supplement the heating of the center of the upper surface of the wafer W, so as to improve the temperature uniformity of the wafer W.

[0068] Accordingly, the utility model also provides an epitaxial growth device, such as Figure 8As shown, it includes: a reaction chamber 602 for processing wafer W; a side wall 621 of the reaction chamber 602 is provided with an air inlet 6211 and an air outlet 6212 for inputting and discharging process gases; a base assembly 603, which is arranged inside the reaction chamber 602, and includes a wafer tray 631 and a driving device 632 arranged below the wafer tray 631; the wafer tray 631 is used to support the wafer W; the driving device 632 drives the wafer tray 631 to rise and fall and rotate; the wafer heating assembly 601 in any of the above embodiments is arranged above the outside of the reaction chamber 602 to heat the wafer W by thermal radiation.

[0069] Among them, Figure 8 As shown, a preheating ring 633 is provided on the circumference of the wafer tray 631 to heat the process gas input from the gas inlet 6211, thereby increasing the edge temperature of the wafer W and reducing the influence of the process gas flow on the edge temperature of the wafer W.

[0070] The top cover 622 of the reaction chamber 602 is made of quartz with a curved cross section, so that the infrared heat radiation of the wafer heating assembly 601 passes through the top cover 622 to heat the wafer W. Further, taking the wafer heating component 201 in the first embodiment as an example, the first area first reflection groove 213a, the first area second reflection groove 213b, the first area third reflection groove 213c and the first area fourth reflection groove 213d which are arranged in a stepped manner in the first area 212a on the lamp holder body 2111 form an arc surface on the inner surface of the lamp holder body 2111, and the second area first reflection groove 213e, the second area second reflection groove 213f, the second area third reflection groove 213g and the second area fourth reflection groove 213h which are arranged in a stepped manner in the second area 212b also form an arc surface on the inner surface of the lamp holder body 2111, and the i-th reflection grooves in the first area 212a and the second area 212b are staggered; at the same time, the heating lamps 214 distributed in a stepped manner in each reflection groove also form an arc surface. The arc surface formed by the arrangement of the reflective grooves and the heating lamps 214 is similar to the arc surface of the top cover 622. The arc surface height of the top cover 622 gradually increases from the edge of the top cover 622 to the center of the top cover 622, and the height difference from the edge of the arc surface to the center of the arc surface ranges from 10 to 50 mm.

[0071] In some other embodiments, the wafer heating assembly in any of the above embodiments may also be disposed on the lower side of the bottom cover 623. Since the arrangement of the heating lamps at the bottom is different from that at the top, the shape and position of each reflective groove may also be set according to the actual arrangement.

[0072] By arranging each reflective groove in the same area in a stepped manner, and the heating lamps in each reflective groove are also distributed in a stepped manner, an arc surface is formed from the edge of the reflective lamp holder 211 to the center of the reflective lamp holder 211. The arc surface is similar to the arc surface of the top cover 622. On the one hand, the heating efficiency of the heating lamp arranged in the reflective groove is increased, and the control accuracy of the reflection path of the heating lamp is improved. Specifically, the arc surface formed by the stepped heating lamp directly radiates the infrared thermal radiation energy to the transparent quartz top cover 622 with a similar arc surface, which weakens the refraction of the infrared light, so that the infrared light passes through the top cover 622 vertically as much as possible, improves the heating efficiency, and weakens the influence of the refracted light, so that the irradiation position of the infrared light is more accurate. On the other hand, the arc surface formed from the edge of the reflective lamp holder 211 to the center of the reflective lamp holder 211 improves the cooling uniformity of the top cover 622 and improves the cooling efficiency. Specifically, since the arrangement of the reflective grooves of the reflective lamp holder 211 and the top cover 622 have similar arc surfaces, the cooling air transmitted by the reflective lamp holder 211 is limited by the arc surface structure of the reflective lamp holder 211, so that the distance from the cooling air transmitted by the reflective lamp holder 211 to the top cover 622 is basically the same, which achieves better cooling uniformity for the top cover 622, and there is no need to increase the cooling air volume to perform multiple redundant air cooling on the top cover 622, thereby improving the cooling efficiency.

[0073] To summarize, the reflective lamp holder, wafer heating assembly and epitaxial growth equipment provided by the utility model adjust the reflection direction of each i-th reflective groove to infrared thermal radiation by arranging i-th reflective grooves with different cross-sectional shapes in adjacent areas on the inner surface of the reflective lamp holder, thereby achieving precise control of the transmission path of infrared thermal radiation.

[0074] At the same time, the i-th reflection grooves in adjacent areas are staggered so that the i-th reflection grooves in adjacent areas are not in the same circle. The infrared thermal radiation is guided to different positions on the wafer through the staggered i-th reflection grooves, thereby adjusting the transmission direction of the infrared thermal radiation, and then adjusting the temperature at different positions on the wafer surface, thereby improving the temperature uniformity of the wafer surface.

[0075] Furthermore, the reflective grooves on the inner surface of the reflective lamp holder and the heating lamps in the reflective grooves are distributed in a stepped manner, so that the inner surface of the reflective lamp holder forms an arc surface similar to the top cover of the reaction chamber, thereby increasing the heating efficiency of the heating lamp arranged in the reflective groove, and improving the control accuracy of the reflection transmission path of the heating lamp. At the same time, it also improves the cooling uniformity of the top cover by the cooling air transmitted from the reflective lamp holder, thereby improving the cooling efficiency.

[0076] Although the content of the utility model has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. A reflector lamp holder, characterized in that: include: A lamp holder body; the lamp holder body is divided into at least two areas along the circumferential direction; In each area, a first reflecting groove, a second reflecting groove, ... an i-th reflecting groove are arranged along the radial direction of the lamp holder body from the edge to the center of the lamp holder body; The cross-sectional shapes of the i-th reflective grooves in the adjacent regions are different, and the i-th reflective grooves in the adjacent regions are staggered.

2. The reflector lamp holder according to claim 1, characterized in that: The offset distance of each i-th reflective groove in the adjacent area is 0.1-10 mm.

3. The reflector lamp holder according to claim 1, characterized in that: The heights of a plurality of reflective grooves arranged along the radial direction of the lamp holder body in the same area are distributed in a stepped manner.

4. The reflector lamp holder according to claim 3, characterized in that: The heights of the reflective grooves arranged along the radial direction of the lamp holder body in the same area increase sequentially from the edge to the center of the lamp holder body.

5. The reflector lamp holder according to claim 1, characterized in that: The cross-sectional shapes of a plurality of reflective grooves arranged along the radial direction of the lamp holder body in the same area are different.

6. The reflector lamp holder according to claim 1, characterized in that: The heights of the i-th reflective grooves in the adjacent regions are different.

7. A wafer heating assembly, characterized in that: include: The reflector lamp holder according to any one of claims 1 to 6; at least one heating lamp is arranged in each of the reflective grooves.

8. The wafer heating assembly according to claim 7, characterized in that: The cross-section of each of the reflective grooves is in an arc shape.

9. The wafer heating assembly according to claim 8, characterized in that: The arc shape is a part of the minor axis arc of an ellipse, the first focus of the ellipse where the arc shape of each reflecting groove is located is located on the heating lamp, and the second focuses of the ellipses where the arc shapes of multiple reflecting grooves are located are located in the same plane.

10. The wafer heating assembly according to claim 9, wherein: A line connecting the ellipse foci corresponding to each of the reflective grooves forms an angle with the wafer surface, and the angles corresponding to the i-th reflective grooves in adjacent areas are not equal.

11. The wafer heating assembly according to claim 10, wherein: The angle range between the included angles corresponding to the i-th reflective grooves in the adjacent areas is 60-150°.

12. The wafer heating assembly according to claim 9, wherein: The angle formed by the connection line of the ellipse focus corresponding to each of the reflective grooves arranged along the radial direction of the lamp holder body in the same area and the wafer surface increases from the edge to the center of the lamp holder body.

13. The wafer heating assembly according to claim 7, wherein: The heights of the heating lamps in the i-th grooves in adjacent areas are inconsistent.

14. The wafer heating assembly according to claim 7, wherein: The heights of the heating lamps in a plurality of reflective grooves arranged along the radial direction of the lamp holder body in the same area are distributed in a stepped manner.

15. The wafer heating assembly according to claim 7, wherein: A linear groove is arranged at the center of the inner surface of the lamp holder body, and at least one heating lamp is arranged in the linear groove, and the height of the heating lamp is higher than the height of any heating lamp in the reflecting groove.

16. The wafer heating assembly according to claim 7, wherein: The shape of each heating lamp in the reflecting groove matches the shape of the reflecting groove and extends along the direction of the reflecting groove; and / or The heating lamps in the reflective groove are linear lamps, and the linear lamps are arranged in sequence along the reflective groove.

17. The wafer heating assembly according to claim 7, wherein: It also includes a reflective tube extending downward along the circumferential edge of the lamp holder body.

18. The wafer heating assembly according to claim 17, wherein: The reflective tube is made of metal.

19. The wafer heating assembly according to claim 17 or 18, characterized in that: The inner surface of the reflective tube is plated with a reflective layer, and the reflective layer is made of one or more of gold, silver or aluminum.

20. An epitaxial growth device, characterized in that: include: Reaction chamber; The side wall of the reaction chamber is provided with an air inlet and an air outlet for inputting and discharging process gas; A base assembly is arranged inside the reaction chamber, comprising a wafer tray and a driving device arranged below the wafer tray; the wafer tray is used to support the wafer; the driving device drives the wafer tray to rise and fall and rotate; The reflective lamp holder according to any one of claims 1 to 6 is arranged above the outside of the reaction chamber, and at least one heating lamp is arranged in each of the reflective grooves, and the heating lamp heats the wafer.

21. The epitaxial growth apparatus according to claim 20, characterized in that: A preheating ring is arranged on the circumference of the wafer tray to heat the process gas input from the gas inlet.

22. The epitaxial growth apparatus according to claim 20, characterized in that: The first focus of the ellipse where the arc shape of each reflective groove is located is located on the heating lamp in the corresponding reflective groove, and the second focus of the ellipse where the arc shape of each reflective groove is located is located on the wafer surface.

23. The epitaxial growth apparatus according to claim 20, characterized in that: The top cover of the reaction chamber is made of quartz with a curved cross section.

24. The epitaxial growth apparatus according to claim 23, characterized in that: The arc surface formed by the step-shaped heating lamps on the reflective lamp holder is similar to the arc surface of the top cover, and the height difference of the arc surface of the top cover from the edge of the top cover to the center of the top cover ranges from 10 to 50 mm.

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