Drying process equipment and wet process production line

Abstract

This application discloses a drying process equipment and a wet process production line for improving wafer yield in wet processing. The drying process equipment includes a process chamber, a drying unit, a gas generator, and a detection component. The process chamber contains a wafer, and the wafer surface has an electric field formed by positive and negative charges. The drying unit is housed within the process chamber and is used to dry the wafer. The gas generator is connected to the process chamber and is used to introduce a gas carrying positive and / or negative ions into the process chamber. The detection component is housed within the process chamber and is used to detect the electric field strength on the wafer surface and output a voltage signal. The detection component is electrically connected to the gas generator to transmit the voltage signal to the gas generator. The drying process equipment in this application is used for drying wafers.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a drying process equipment and a wet process production line. Background Technology Wet process technology is a process that uses a liquid medium to process materials with high precision, and therefore it is widely used in the field of semiconductor manufacturing technology.

[0002] In related technologies, wafers need to be dried after wet processing. This is usually achieved by rotating the wafer. During the rotation, static electricity is generated on the wafer surface due to friction with the air. This can easily cause electrostatic discharge damage to the wafer, thereby reducing the wafer yield. Utility Model Content

[0003] This application provides a drying process equipment and a wet process production line to improve the yield of wafers in wet processes.

[0004] The technical solution of this application embodiment is implemented as follows: This application provides a drying process apparatus, comprising a process chamber, a drying device, a gas generator, and a detection component. The process chamber contains a wafer, the wafer surface of which has an electric field formed by positive and negative charges. The drying device is housed within the process chamber and is used to dry the wafer. The gas generator is connected to the process chamber and is used to introduce a gas carrying positive and / or negative ions into the process chamber. The detection component is housed within the process chamber and is used to detect the electric field strength on the wafer surface and output a voltage signal. The detection component is electrically connected to the gas generator to transmit the voltage signal to the gas generator.

[0005] In the technical solution of this application embodiment, a drying device is disposed in a process chamber. The drying device can dry the wafer in the process chamber. During the drying process, positive and negative charges are generated on the wafer surface, forming an electric field. Since the detection component is housed in the process chamber, the electric field strength on the wafer surface can be detected by the detection component, and a voltage signal is output. Through the electrical connection between the detection component and the gas generator, the voltage signal is transmitted to the gas generator. The gas generator will generate gas carrying positive and / or negative ions according to the voltage signal. For example, if the voltage signal is positive, indicating an excessive amount of positive charge, then gas will be generated. The gas generator produces a gas carrying only negative ions or a mixture of most negative ions and a few positive ions. This gas enters the process chamber and neutralizes the positive and negative charges on the wafer surface, preventing static electricity buildup and electrostatic discharge (ESD) damage. Similarly, if the voltage signal is negative, indicating excessive negative charge, the gas generator will produce a gas carrying only positive ions or a mixture of most positive ions and a few negative ions. This gas enters the process chamber and neutralizes the positive and negative charges on the wafer surface, preventing static electricity buildup and ESD damage, thereby improving wafer yield.

[0006] In addition, the electric field strength on the wafer surface is detected in real time by the detection component and converted into a voltage signal, which is then fed back to the gas generating device. This feedback process is highly sensitive and has high accuracy in neutralizing positive and negative charges.

[0007] In some embodiments of this application, the detection component includes an electrostatic sensor and a conversion module. The electrostatic sensor is positioned opposite and spaced apart from the wafer surface and is used to detect the electric field strength on the wafer surface. The conversion module is electrically connected to both the electrostatic sensor and the gas generator, and is used to convert the electric field strength signal transmitted by the electrostatic sensor into a voltage signal.

[0008] With this setup, the electrostatic sensor can detect the electric field strength on the wafer surface through a distance from the wafer, transmitting the electric field strength signal to the conversion module. The conversion module then converts the electric field strength signal into a voltage signal, which is transmitted to the gas generator to produce a suitable gas carrying positive and / or negative ions. This non-contact detection method avoids contaminating the wafer and does not affect the wafer drying process, making it more convenient.

[0009] In some embodiments of this application, the detection component further includes a housing, an electrostatic sensor and a conversion module, all housed within the housing. The housing has a through-hole on the side facing the wafer, and the electrostatic sensor is located at the through-hole to detect the electric field strength on the wafer surface.

[0010] With this design, the housing provides physical protection for the electrostatic sensor and the conversion module. Due to the through holes on the housing, the electrostatic sensor can still detect the electric field strength on the wafer surface through the through holes, thus ensuring the normal functioning of the electrostatic sensor.

[0011] In some embodiments of this application, the drying process equipment further includes a connecting line, the first end of which is electrically connected to the conversion module, and the second end of which is electrically connected to the gas generating device.

[0012] With this setup, the conversion module can be electrically connected to the gas generator via a connecting cable. The wired connection is more reliable and can ensure the reliability of signal transmission between the conversion module and the gas generator, thereby ensuring the overall reliability of the drying process equipment.

[0013] In some embodiments of this application, the detection component further includes an interface, which is electrically connected to the conversion module. The first end of the connecting cable is plugged into the interface and electrically connected to the conversion module via the interface.

[0014] With this configuration, the connecting cable can be electrically connected to the conversion module via the interface plug-in, which facilitates the detachable connection of the connecting cable and the detection component as a whole, improving the ease of assembly and disassembly.

[0015] In some embodiments of this application, the drying process equipment further includes a support, which is housed within the process chamber and connected to the top of the process chamber, and is spaced apart from the wafer, with the detection component connected to the support.

[0016] With this setup, the testing components can be connected to the process chamber via a bracket, thereby achieving a relative spacing with the wafer. The bracket setup improves the placement and ease of installation of the testing components.

[0017] In some embodiments of this application, the detection component further includes an alarm module, which is electrically connected to the conversion module and receives the voltage signal transmitted by the conversion module.

[0018] With this setup, since the alarm module is electrically connected to the conversion module, an alarm will be triggered when the voltage output by the conversion module exceeds the threshold, thus alerting the user.

[0019] In some embodiments of this application, the gas generating device includes: a gas source component, a pipeline, and an ionizing component. The outlet of the gas source component is connected to the inlet of the pipeline, and the gas source component is used to generate process gas. The outlet of the pipeline is connected to the interior of a process chamber. The ionizing component is at least partially located inside the pipeline and is used to ionize the process gas inside the pipeline to form a gas carrying positive and / or negative ions. A detection component is electrically connected to the ionizing component to transmit a voltage signal to the ionizing component.

[0020] With this setup, the gas source component can generate process gas, which can be transmitted into the process chamber through pipelines. During transmission, when the ion component receives a voltage signal from the detection component, it can ionize the process gas as needed to generate gas carrying positive and / or negative ions. This neutralizes the positive and negative charges on the wafer surface within the process chamber. For example, if the voltage signal is positive, indicating excessive positive charge, the ion component will ionize the process gas to generate gas carrying only negative ions or a mixture of most negative ions and a few positive ions. This gas, entering the process chamber, neutralizes the positive and negative charges on the wafer surface, preventing static electricity buildup and electrostatic discharge (ESD) damage. Conversely, if the voltage signal is negative, indicating excessive negative charge, the ion component will ionize the process gas to generate gas carrying only positive ions or a mixture of most positive ions and a few negative ions. This gas, entering the process chamber, neutralizes the positive and negative charges on the wafer surface, preventing static electricity buildup and ESD damage, thereby improving wafer yield.

[0021] In some embodiments of this application, the drying apparatus includes a rotary table and a power unit. The rotary table is capable of rotating about its center of gravity, and the wafer is supported on the rotary table. The power unit is used to drive the rotary table to rotate.

[0022] With this setup, the wafer can be supported on a rotating platform, which, driven by a power unit, can rotate around its center of gravity to dry the wafer using centrifugal force.

[0023] A second aspect of this application provides a wet process production line, which includes the drying process equipment in any of the above embodiments and at least one wet process equipment, the wet process equipment being located upstream of the drying process equipment, and the wet process equipment being used to perform liquid-involved process processing on the wafer.

[0024] In the technical solutions of this application embodiment, since the drying process equipment in any of the above embodiments is included, the same beneficial effects can be achieved. Attached Figure Description

[0025] Figure 1 A schematic diagram of a wet process production line provided for some embodiments of this application; Figure 2 A first structural schematic diagram of a drying process apparatus provided for some embodiments of this application; Figure 3 Schematic diagrams of the structure of the detection component and the gas generating device in cooperation with some embodiments of this application; Figure 4 A first-view structural schematic diagram of the detection component provided for some embodiments of this application; Figure 5 A second-view structural schematic diagram of the detection component provided for some embodiments of this application; Figure 6 A third-view structural schematic diagram of a detection component provided for some embodiments of this application; Figure 7 A fourth-view structural schematic diagram of a detection component provided for some embodiments of this application; Figure 8 A fifth-view structural schematic diagram of a detection component provided for some embodiments of this application; Figure 9 A sixth-view structural schematic diagram of a detection component provided for some embodiments of this application; Figure 10 A second structural schematic diagram of a drying process apparatus provided for some embodiments of this application.

[0026] Explanation of reference numerals in the attached figures 100-Drying process equipment; 110-Process chamber; 120-Drying device; 121-Rotating table; 122-Power unit; 130-Gas generator; 131-Gas source component; 132-Pipeline; 133-Ionizing component; 140-Detection component; 141-Electrostatic sensor; 142-Conversion module; 143-Housing; a-Through hole; 144-Interface; 145-Alarm module; 146-Select test distance button; 147-Indicator light; 148-Select device address button; 149-Range adjustment button; 150-Connecting cable; 160-Bracket; 200-Wet process equipment; 300-Wafer. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limitations on this application. All other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0028] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0029] In the embodiments of this application, the terms "module" or "unit" refer to a computer program or part of a computer program that has a predetermined function and works with other related parts to achieve a predetermined goal, and can be implemented wholly or partially using software, hardware (such as processing circuitry or memory), or a combination thereof. Similarly, a processor (or multiple processors or memory) can be used to implement one or more modules or units. Furthermore, each module or unit can be part of an overall module or unit that includes the functionality of that module or unit.

[0030] Unless otherwise defined, all technical and scientific terms used in the embodiments of this application have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the embodiments of this application is for the purpose of describing the embodiments of this application only and is not intended to limit this application.

[0031] In the implementation of this application, the collection and processing of relevant data should strictly comply with the requirements of relevant laws and regulations, obtain the informed consent or separate consent of the personal information subject, and carry out subsequent data use and processing within the scope of laws and regulations and the authorization of the personal information subject.

[0032] Before providing a further detailed description of the embodiments of this application, the nouns and terms involved in the embodiments of this application will be explained, and the nouns and terms involved in the embodiments of this application shall be interpreted as follows.

[0033] Wet process technology is a process that uses a liquid medium to process materials with high precision, and therefore it is widely used in the field of semiconductor manufacturing technology.

[0034] Based on this, such as Figure 1 As shown, this application provides a wet process production line, which includes a drying process equipment 100 and at least one wet process equipment 200. The wet process equipment 200 is located upstream of the drying process equipment 100 and is used to perform liquid-involved process processing on the wafer 300.

[0035] It is understandable that the liquids used in the wet process equipment 200 need to be selected based on the specific function of the wet process equipment 200. For example, the liquid can be a high-purity solution (hydrofluoric acid, nitric acid, or phosphoric acid, etc.), which can be used for cleaning, etching, etc. of the wafer 300. Alternatively, the liquid can be a compound solution (developer, stripper, or etchant, etc.).

[0036] At least one wet process equipment 200 may include at least one of cleaning equipment, etching equipment, and auxiliary equipment. For example, the cleaning equipment may be a single-wafer 300 wet cleaning equipment, a batch wet cleaning equipment, or an ultrasonic cleaner. For example, the etching equipment may be a wet etching tank or a spray etching equipment. For example, the auxiliary equipment may be a chemical solution supply system or a deionized water system.

[0037] For example, along the production line direction of the wet process production line, multiple wet process equipment 200 are set up, which may include cleaning equipment, etching equipment, cleaning equipment in sequence, and then drying process equipment 100 is set downstream of the last cleaning equipment.

[0038] In addition, the drying process equipment 100 refers to the setup that can dry the wafer 300. After the wet process equipment 200, liquid will be attached to the surface of the wafer 300. In order to remove the liquid, the wafer 300 needs to be dried.

[0039] With the above settings, the wafer 300 can undergo corresponding wet process treatment in the wet process equipment 200, such as etching and cleaning. After the wet process is completed, the wafer 300 can enter the downstream drying process equipment 100, which can dry the wafer 300 to complete the processing of the wafer 300.

[0040] In related technologies, drying is generally achieved by rotating the wafer 300 inside the drying process equipment 100. During the rotation process, static electricity is generated between the contact points between the wafer 300 and the support platform used to support the wafer 300, as well as between the wafer 300 and the air. This leads to the accumulation and release of static electricity, which can easily cause electrostatic discharge damage to the wafer 300, thereby reducing the yield of the wafer 300.

[0041] Based on this, such as Figure 2 As shown, this application provides a drying process apparatus 100, which includes a process chamber 110, a drying device 120, a gas generating device 130, and a detection component 140. The process chamber 110 is used to house a wafer 300, and the surface of the wafer 300 has an electric field formed by positive and negative charges. The drying device 120 is housed in the process chamber 110 and is used to dry the wafer 300. The gas generating device 130 is connected to the interior of the process chamber 110 and is used to introduce a gas carrying positive and / or negative ions into the process chamber 110. The detection component 140 is housed in the process chamber 110 and is used to detect the electric field strength on the surface of the wafer 300 and output a voltage signal. The detection component 140 is electrically connected to the gas generating device 130 to transmit the voltage signal to the gas generating device 130.

[0042] The process chamber 110 can be open or closed, and the specific choice can be made according to the needs.

[0043] In addition, drying equipment refers to equipment capable of drying wafer 300. For example, drying equipment can be rotary, drying wafer 300 by rotating it; it can also be a hot air system, drying wafer 300 by introducing hot air; or it can be a blowing system, drying wafer 300 by blowing air onto its surface. The positive and negative charges on the surface of wafer 300 are mainly generated during the drying process.

[0044] It should be explained that after the detection component 140 transmits the voltage signal to the gas generator 130, the gas generator 130 can generate gas carrying an appropriate number of positive and / or negative ions according to the voltage signal.

[0045] With the above configuration, the drying device 120 is placed inside the process chamber 110. The drying device 120 can dry the wafer 300 inside the process chamber 110. During the drying process, positive and negative charges are generated on the surface of the wafer 300, forming an electric field. Since the detection component 140 is housed inside the process chamber 110, the electric field strength on the surface of the wafer 300 can be detected by the detection component 140, and a voltage signal is output. Through the electrical connection between the detection component 140 and the gas generator 130, the voltage signal is transmitted to the gas generator 130. The gas generator 130 will generate gas carrying positive and / or negative ions according to the voltage signal. For example, if the voltage signal is positive, indicating an excess of positive charge, then the gas... The gas generator 130 generates a gas carrying only negative ions or a mixture of most negative ions and a few positive ions. This gas enters the process chamber 110 and neutralizes the positive and negative charges on the surface of the wafer 300, preventing static electricity buildup on the wafer 300 surface and avoiding electrostatic breakdown. For example, if the voltage signal is negative, indicating excessive negative charge, the gas generator 130 will generate a gas carrying only positive ions or a mixture of most positive ions and a few negative ions. This gas enters the process chamber 110 and neutralizes the positive and negative charges on the surface of the wafer 300, preventing static electricity buildup on the wafer 300 surface and avoiding electrostatic breakdown, thereby improving the yield of the wafer 300.

[0046] In addition, the electric field strength on the surface of the wafer 300 is detected in real time by the detection component 140, converted into a voltage signal and then fed back to the gas generating device 130. This feedback process is highly sensitive and has high accuracy in neutralizing positive and negative charges.

[0047] The detection component 140 can be a contact electrometer or a non-contact electrometer. A contact electrometer can detect the potential and the amount of positive and negative charges on the surface of the wafer 300 by contacting it, then converting this into an electric field strength signal, and subsequently into a voltage signal. A non-contact electrometer, on the other hand, can detect the electric field strength on the surface of the wafer 300 remotely through its internal electrostatic sensor 141, and then convert the electric field strength signal into a voltage signal. The specific structure of the detection component 140 is described below.

[0048] In some embodiments of this application, such as Figures 3-9 As shown, the detection component 140 includes an electrostatic sensor 141 and a conversion module 142. The electrostatic sensor 141 is positioned opposite to and spaced apart from the surface of the wafer 300, and is used to detect the electric field strength on the surface of the wafer 300. The conversion module 142 is electrically connected to both the electrostatic sensor 141 and the gas generator 130, and is used to convert the electric field strength signal transmitted by the electrostatic sensor 141 into a voltage signal.

[0049] In other words, the detection component 140 in this embodiment is a non-contact electrometer. The non-contact electrometer can be a Trek520 series, such as a Trek520-1-CE; or it can be a SimcoFMX series, such as an FMX-003. Specifically, a non-contact electrometer that can detect the electric field strength on the surface of wafer 300 and convert the electric field strength signal into a voltage signal can be selected as needed. It should be noted that this application does not involve any improvement to the method of cooperation between the electrostatic sensor 141 and the conversion module 142 in the non-contact electrometer. For example, the electrostatic sensor 141 can be a capacitive or inductive electrostatic sensor 141, such as an AP-YV3302 capacitive electrostatic sensor 141, and the conversion module 142 can be a SIT_QV charge amplification module or a KEYSIGHT6514 charge amplification module.

[0050] It is understandable that the accumulation of positive and negative charges on the surface of wafer 300 will cause the electric field intensity on the surface of wafer 300 to change. The electrostatic sensor 141 can detect the electric field intensity on the surface of wafer 300 through the capacitance effect or electromagnetic effect, and convert the electric field intensity signal into a voltage signal through the conversion module 142. The number of positive and negative charges on the surface of wafer 300 can be determined by the sign of the voltage signal.

[0051] The detection component 140 can be positioned directly above the wafer 300, with the electrostatic sensor 141 facing the wafer 300, thus ensuring the detection range.

[0052] In some examples, the detection component 140 is a non-contact electrometer, and the distance between the electrostatic sensor 141 and the surface of the wafer 300 in the non-contact electrometer can range from 10 to 500 mm. Figure 4 As shown, the detection component 140 has a button 146 for selecting the test distance. (As shown...) Figure 5 As shown, the non-contact electrometer also has a range adjustment button 149. The voltage range of the non-contact electrometer is ±18000V. The appropriate range can be selected according to the electric field strength on the surface of the wafer 300. This type of non-contact electrometer has stronger adaptability and higher detection accuracy, which can reach ±5%.

[0053] In some examples, such as Figure 6 As shown, the detection component 140 also has a device address selection button 148, which means that the detection component 140 also has the function of selecting the device address, and can select the process chamber 110 corresponding to the detection component 140.

[0054] With the above configuration, the electrostatic sensor 141 and the wafer 300 are spaced apart. Based on the capacitance effect of the electrostatic sensor 141, the electric field strength on the surface of the wafer 300 is detected in a non-contact manner, and the electric field strength signal is transmitted to the conversion module 142. The conversion module 142 then converts the electric field strength signal into a voltage signal, which is then transmitted to the gas generator 130 to generate a suitable gas carrying positive and / or negative ions. This detection and conversion process is highly sensitive and allows for real-time monitoring and adjustment. Furthermore, because the electrostatic sensor 141 and the wafer 300 are spaced apart, it is a non-contact detection method, which avoids contaminating the wafer 300 and affecting the wafer 300 drying process, thus making it more convenient.

[0055] In some embodiments of this application, such as Figures 3-9 As shown, the detection component 140 also includes a housing 143, an electrostatic sensor 141 and a conversion module 142, all of which are housed within the housing 143. The housing 143 has a through hole a on the side facing the wafer 300. The electrostatic sensor 141 is located at the through hole a and detects the electric field strength on the surface of the wafer 300 through the through hole a.

[0056] For example, the housing 143 can be a long cylindrical shape and located above the wafer 300. The length of the long cylindrical shape is vertical, and the through hole a is located on the downward end face of the long cylindrical shape. The electrostatic sensor 141 detects the electric field strength on the surface of the wafer 300 through the downward-facing through hole a.

[0057] With the above settings, the housing 143 can provide physical protection for the electrostatic sensor 141 and the conversion module 142. Due to the through hole a on the housing 143, the electrostatic sensor 141 can still detect the electric field strength on the surface of the wafer 300 through the through hole a, so as to ensure the normal functioning of the electrostatic sensor 141.

[0058] The conversion module 142 and the gas generator 130 can be electrically connected via wired or wireless means. In the wired case, a connecting cable 150 is required. In the wireless case, a wireless transmitting module and a wireless receiving module are required. The wireless transmitting module is located in the conversion module, and the wireless receiving module is located in the gas generator 130.

[0059] In some embodiments of this application, such as Figures 3-9 As shown, the drying process equipment 100 also includes a connecting line 150, the first end of which is electrically connected to the conversion module 142, and the second end of which is electrically connected to the gas generating device 130.

[0060] In other words, the conversion module 142 and the gas generator 130 are electrically connected together by a connecting line 150, the length of which can be selected according to the distance between the gas generator 130 and the detection module.

[0061] With the above settings, the conversion module 142 can be electrically connected to the gas generator 130 via the connecting cable 150. The wired connection is more reliable and can ensure the reliability of signal transmission between the conversion module 142 and the gas generator 130, thereby ensuring the overall reliability of the drying process equipment 100.

[0062] In some embodiments of this application, such as Figures 3-9 As shown, the detection component 140 also includes an interface 144, which is electrically connected to the conversion module 142. The first end of the connecting cable 150 is plugged into the interface 144 and electrically connected to the conversion module 142 via the interface 144.

[0063] It is understandable that the first end of the connecting cable 150 and the interface 144 should be detachably connected.

[0064] In some examples, the first end of the connector 150 has a plug that plugs into the interface 144. This ensures the stability of the connection between the first end of the connector 150 and the interface 144, while also facilitating disassembly.

[0065] In some examples, the detection component 140 includes a housing 143, on which an interface 144 is formed. The housing 143 is configured to ensure ease of formation and reliability of the interface 144.

[0066] With the above settings, the connecting cable 150 can be electrically connected to the conversion module 142 by plugging into the interface 144, which facilitates the detachable connection of the connecting cable 150 and the detection component 140 as a whole, improving the convenience of disassembly and assembly.

[0067] In some embodiments of this application, such as Figures 3-9 As shown, the detection component 140 also includes an alarm module 145, which is electrically connected to the conversion module 142 and receives the voltage signal transmitted by the conversion module 142.

[0068] The alarm module 145 can be at least one of a sound alarm module, a light alarm module, or a visual alarm module. That is, the alarm module 145 can alert the user through at least one of sound, light, or visual means. For example, such as... Figure 7 As shown, the detection component 140 also has an indicator light 147.

[0069] With the above settings, since the alarm module 145 is electrically connected to the conversion module 142, an alarm will be triggered when the voltage output by the conversion module 142 is higher than the threshold, so as to remind the user that the electric field strength on the surface of the wafer 300 is too high at this time, and that attention should be paid and timely action should be taken.

[0070] In some embodiments of this application, such as Figure 10 As shown, the drying process equipment 100 also includes a support 160, which is housed in the process chamber 110 and connected to the top of the process chamber 110, and is spaced apart from the wafer 300. The detection component 140 is connected to the support 160.

[0071] In other words, the detection component 140 is connected to the process chamber 110 via the bracket 160 and is spaced apart from the wafer 300.

[0072] The structure of the support 160 can be selected and configured as needed. For example, it can include multiple rod-shaped structures, which are spliced ​​together to form the support 160. Alternatively, the support 160 can include a hollow plate-shaped structure.

[0073] In some examples, the projection of the support 160 onto the same plane along the direction of gravity coincides with the projection of the wafer 300. This makes it easy to place the detection component 140 directly above the wafer 300, ensuring the accuracy of the detection.

[0074] With the above configuration, the detection component 140 can be connected to the process chamber 110 via the bracket 160, thereby achieving a relative spacing with the wafer 300. The bracket 160 configuration can improve the placement and installation convenience of the detection component 140.

[0075] In some embodiments of this application, such as Figure 10 As shown, the gas generating device 130 includes a gas source component 131, a pipeline 132, and an ionizing component 133. The outlet of the gas source component 131 is connected to the inlet of the pipeline 132, and the gas source component 131 is used to generate process gas. The outlet of the pipeline 132 is connected to the interior of the process chamber 110. The ionizing component 133 is at least partially located inside the pipeline 132 and is used to ionize the process gas inside the pipeline 132 to form a gas carrying positive and / or negative ions. The detection component 140 is electrically connected to the ionizing component 133 to transmit a voltage signal to the ionizing component 133.

[0076] The process gas generated by the gas source component 131 cannot affect the wafer 300. For example, the process gas can be an inert gas such as nitrogen or argon.

[0077] In some examples, a valve can be installed on pipe 132 to control the opening of pipe 132, thereby improving the ease of control.

[0078] Alternatively, the ion component 133 can be an ion gun, the end of which extends into the pipe 132 to ionize the process gas passing through the pipe 132, thereby forming a gas carrying positive and / or negative ions.

[0079] With the above configuration, the gas source component 131 can generate process gas, which can be transmitted into the process chamber 110 through the pipe 132. During the transmission process, when the ion component 133 receives the voltage signal transmitted by the detection component 140, it can ionize the process gas as needed to generate gas carrying positive and / or negative ions, thereby neutralizing the positive and negative charges on the surface of the wafer 300 in the process chamber 110. For example, if the voltage signal is positive, indicating an excessive amount of positive charge, the ion component 133 will ionize the process gas to generate gas carrying only negative ions or gas carrying a majority of negative ions and a few positive ions. When gas enters the process chamber 110, it can neutralize the positive and negative charges on the surface of the wafer 300, thereby preventing static electricity from being generated on the surface of the wafer 300 due to charge accumulation and avoiding electrostatic breakdown of the wafer 300. For example, if the voltage signal is negative, indicating that there is too much negative charge, the ionization unit 133 will ionize the process gas to generate a gas that carries only positive ions or a gas that carries most positive ions and a few negative ions. When this gas enters the process chamber 110, it can neutralize the positive and negative charges on the surface of the wafer 300, thereby preventing static electricity from being generated on the surface of the wafer 300 due to charge accumulation and avoiding electrostatic breakdown of the wafer 300, thus improving the yield of the wafer 300.

[0080] In some embodiments of this application, such as Figure 10As shown, the drying apparatus 120 includes a rotary table 121 and a power unit 122. The rotary table 121 is rotatable about the center of gravity, and the wafer 300 is supported on the rotary table 121. The power unit 122 is used to drive the rotary table 121 to rotate.

[0081] The rotating stage 121 can be a disk-shaped structure, and the wafer 300 is placed on the upper surface of the disk-shaped structure. The power component 122 can be a motor, electric motor, or other components.

[0082] With the above settings, when drying the wafer 300, the wafer 300 is placed on the rotary table 121. Driven by the power unit 122, the rotary table 121 can rotate around the center of gravity to dry the wafer 300 by centrifugal force.

[0083] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Any modifications, equivalent substitutions, and improvements made within the spirit and scope of this application are included within the scope of protection of this application.

Claims

1. A drying process apparatus, characterized by, include: A process chamber, the interior of which is used to house a wafer, the surface of which has an electric field formed by positive and negative charges; A drying apparatus, housed within the process chamber, is used to dry the wafer; A gas generating device is connected to the interior of the process chamber and is used to introduce a gas carrying positive and / or negative ions into the process chamber. A detection component is housed within the process chamber. The detection component is used to detect the electric field strength on the wafer surface and output a voltage signal. The detection component is electrically connected to the gas generating device to transmit the voltage signal to the gas generating device.

2. The drying process equipment according to claim 1, characterized in that, The detection component includes an electrostatic sensor and a conversion module. The electrostatic sensor is positioned opposite to and spaced apart from the wafer surface and is used to detect the electric field strength on the wafer surface. The conversion module is electrically connected to both the electrostatic sensor and the gas generator and is used to convert the electric field strength signal transmitted by the electrostatic sensor into the voltage signal.

3. The drying process equipment according to claim 2, characterized in that, The detection component also includes a housing, in which the electrostatic sensor and the conversion module are housed. The housing has a through hole on the side facing the wafer, and the electrostatic sensor is located at the through hole and detects the electric field strength on the wafer surface through the through hole.

4. The drying process equipment according to claim 2, characterized in that, The drying process equipment also includes a connecting line, the first end of which is electrically connected to the conversion module, and the second end of which is electrically connected to the gas generating device.

5. The drying process equipment according to claim 4, characterized in that, The detection component also includes an interface, which is electrically connected to the conversion module. The first end of the connecting line is plugged into the interface and electrically connected to the conversion module via the interface.

6. The drying process equipment according to claim 2, characterized in that, The drying process equipment also includes a support frame housed within the process chamber and connected to the top of the process chamber, spaced apart from the wafer. The detection component is connected to the support frame.

7. The drying process equipment according to claim 2, characterized in that, The detection component also includes an alarm module, which is electrically connected to the conversion module and receives the voltage signal transmitted by the conversion module.

8. The drying process equipment according to claim 1, characterized in that, The gas generating device includes a gas source component, a pipeline, and an ionizing component. The outlet of the gas source component is connected to the inlet of the pipeline, and the gas source component is used to generate process gas. The outlet of the pipeline is connected to the interior of the process chamber. The ionizing component is at least partially located inside the pipeline and is used to ionize the process gas inside the pipeline to form a gas carrying positive and / or negative ions. The detection component is electrically connected to the ionizing component to transmit the voltage signal to the ionizing component.

9. The drying process equipment according to any one of claims 1-8, characterized in that, The drying device includes a rotating table and a power unit. The rotating table is capable of rotating about the center of gravity, and the wafer is supported on the rotating table. The power unit is used to drive the rotating table to rotate.

10. A wet process production line, characterized in that, include: The drying process equipment according to any one of claims 1-9; At least one wet process apparatus is located upstream of the drying process apparatus, the wet process apparatus being used for liquid-involved process treatment of the wafer.

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