Composition for removing edge beads of metal-containing resist and pattern forming method including a step of removing edge beads using the same
A composition of phosphoric acid, phosphorous acid, hypophosphorous acid, and carboxylic acid compounds with an organic solvent addresses the challenge of edge bead removal in semiconductor manufacturing, enhancing device integration and reliability by reducing resist residue and defects.
JP7814436B2Active Publication Date: 2026-02-16SAMSUNG SDI CO LTD
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Patent Information
- Application Number
- JP2024059397
- Authority / Receiving Office
- JP · JP
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2023-05-15
- Filing Date
- 2024-04-02
- Publication Date
- 2026-02-16
- Estimated Expiration
- 2044-04-02
AI Technical Summary
Technical Problem
Existing semiconductor manufacturing processes face challenges in effectively removing edge beads of metal-containing resist, leading to resist residue and pattern defects during etching and ion implantation, which affect the integration and reliability of semiconductor devices.
Method used
A composition comprising phosphoric acid, phosphorous acid, hypophosphorous acid, and carboxylic acid compounds, along with an organic solvent, is used to minimize resist residue by efficiently removing edge beads during a pattern forming process.
Benefits of technology
The composition effectively removes edge beads, minimizing resist residue and film deterioration, thereby improving the integration and reliability of semiconductor devices by reducing defects in subsequent processes.
✦ Generated by Eureka AI based on patent content.
Abstract
To provide a composition for removing edge beads of a metal-containing resist, in detail, a composition for removing edge beads of a metal-containing resist that minimizes a resist residue.SOLUTION: A composition for removing edge beads of a metal-containing resist includes: an additive including at least one selected from a group consisting of phosphoric acid, a phosphorous acid-based compound, and a hypophosphorous acid-based compound and a carboxylic acid-based compound; and an organic solvent. A mixing mass ratio of the at least one selected from the group consisting of the phosphoric acid, the phosphorous acid-based compound, and the hypophosphorous acid-based compound to the carboxylic acid-based compound is 9:1 to 1.2:1.SELECTED DRAWING: Figure 1
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