Semiconductor nanomaterial with high stability

Abstract

Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Description

BACKGROUND OF THE INVENTIONField of the Invention

[0001] The present invention relates to a semiconductor nanomaterial, and in particular to a semiconductor nanomaterial with high stability.Description of Related Art

[0002] Semiconductor nanoparticles, also referred to as quantum dots (QDs), are semiconductor materials with a nano-sized (generally <100 nm) dimensions and a crystalline structure, which can include from hundreds to thousands of atoms. Since QDs are very small, they have a large specific surface area, and also exhibit quantum confinement effects. Accordingly, they have unique physicochemical characteristics based on their size, that differ from inherent characteristics of corresponding bulk semiconductor materials.

[0003] The photoluminescence of QDs are narrower in full width at half maximum (FWHM) which gives purer color. Furthermore, the photoelectric properties of QDs can be readily controlled by adjusting their core sizes. Therefore, QDs are still under active invest...

Examples

experimental example 1

[0027]0.575 mmol of indium acetate, 0.284 mmol of zinc acetate, 2.29 mmol of palmitic acid, and 125 mmol of 1-octadecene are heated in a vacuum environment at 140° C. for 2 hours. Next, the reaction system is changed to N2 environment and the reaction system is cooled to room temperature.

[0028]Thereafter, add 0.39 mmol of tris(trimethylsilyl)phosphine and 0.39 mmol of trioctylphosphine at room temperature, then raise the temperature to 270° C. and maintain this temperature for 2 minutes to form a reaction solution.

[0029]Afterwards, the temperature of the said reaction solution is lowered to 150° C., then add selenium (2.4 mmol) dissolved in 4.05 mmol of trioctylphosphine and zinc stearate (25.27 mmol) dissolved in 88 mmol of 1-octadecene. The reaction temperature is then raised to 320° C. and maintain for 30 minutes.

[0030]At a temperature of 320° C., add selenium (2.4 mmol) dissolved in 4.05 mmol of trioctylphosphine and zinc stearate (25.27 mmol) dissolved in 88 mmol of 1-octadecen...

BACKGROUND OF THE INVENTIONField of the Invention

[0001] The present invention relates to a semiconductor nanomaterial, and in particular to a semiconductor nanomaterial with high stability.Description of Related Art

[0002] Semiconductor nanoparticles, also referred to as quantum dots (QDs), are semiconductor materials with a nano-sized (generally <100 nm) dimensions and a crystalline structure, which can include from hundreds to thousands of atoms. Since QDs are very small, they have a large specific surface area, and also exhibit quantum confinement effects. Accordingly, they have unique physicochemical characteristics based on their size, that differ from inherent characteristics of corresponding bulk semiconductor materials.

[0003] The photoluminescence of QDs are narrower in full width at half maximum (FWHM) which gives purer color. Furthermore, the photoelectric properties of QDs can be readily controlled by adjusting their core sizes. Therefore, QDs are still under active invest...

Examples

experimental example 1

[0027]0.575 mmol of indium acetate, 0.284 mmol of zinc acetate, 2.29 mmol of palmitic acid, and 125 mmol of 1-octadecene are heated in a vacuum environment at 140° C. for 2 hours. Next, the reaction system is changed to N2 environment and the reaction system is cooled to room temperature.

[0028]Thereafter, add 0.39 mmol of tris(trimethylsilyl)phosphine and 0.39 mmol of trioctylphosphine at room temperature, then raise the temperature to 270° C. and maintain this temperature for 2 minutes to form a reaction solution.

[0029]Afterwards, the temperature of the said reaction solution is lowered to 150° C., then add selenium (2.4 mmol) dissolved in 4.05 mmol of trioctylphosphine and zinc stearate (25.27 mmol) dissolved in 88 mmol of 1-octadecene. The reaction temperature is then raised to 320° C. and maintain for 30 minutes.

[0030]At a temperature of 320° C., add selenium (2.4 mmol) dissolved in 4.05 mmol of trioctylphosphine and zinc stearate (25.27 mmol) dissolved in 88 mmol of 1-octadecen...

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