MOSFET degeneration assessment method based on Miller platform voltage, and MOSFET residual life prediction method applying the method

Abstract

The invention discloses a MOSFET degeneration assessment method based on Miller platform voltage, and a MOSFET residual life prediction method applying the method, and relates to the field of degeneration assessment and life prediction of a semiconductor, for the purposes of solving the problem of incapability of real-time online assessment of the degeneration state of a MOSFET and meeting the demand for a residual life prediction method of the MOSFET. The assessment method based on the Miller platform voltage, which takes the Miller platform voltage in open waveforms of the MOSFET as a sensitive characteristic parameter, takes the Miller platform voltage of the MOSFET as the parameter for assessing the device degeneration state. A MOSFET degeneration model is obtained by use of the MOSFET degeneration assessment method based on the Miller platform voltage, then the parameter of the MOSFET degeneration model is corrected and updated by use of a particle filtering algorithm, a new MOSFET degeneration model is obtained, and a time difference between a current state of the MOSFET and a failure threshold is obtained accordingly, such that the residual life of the MOSFET is predicted. The methods provided by the invention are applied to the degeneration assessment and the life prediction of the semiconductor.

Description

technical field

[0001] The invention relates to the fields of semiconductor degradation evaluation and lifetime prediction. Background technique

[0002] Due to its fast turn-on speed and good thermal stability, power MOSFETs are widely used in power electronic circuits of hybrid vehicles, aerospace vehicles and other equipment. In recent years, with the rapid development of microelectronic device processing technology, the channel length and gate oxide thickness of the device have been continuously reduced, the dynamic characteristics of the device have also been improved, and the power loss and cost have been significantly reduced. However, while the size of the device is shrinking, the degradation of the hot carrier injection of the MOSFET and the breakdown of the gate oxide layer over time are more significant, and the resulting accumulation of oxide layer and interface state defect damage will eventually lead to the loss of controllability of the gate of the MOSFET. , ...

Examples

specific Embodiment approach 1

[0038] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One, this embodiment is specifically described with reference to the figure, the MOSFET degradation evaluation method based on the Miller plateau voltage described in this embodiment, the degradation evaluation method includes the following steps:

[0039] Step 1. Connect the MOSFET to the actual working circuit, collect and store the gate-source voltage waveform at the moment when the MOSFET is turned on;

[0040] Step 2, extracting the Miller plateau voltage from the collected voltage waveform, and storing, the Miller plateau voltage is recorded as the initial value of the Miller plateau voltage;

[0041] Step 3. According to the time-dependent breakdown degradation (TDDB) mechanism of the gate oxide layer of the MOSFET, an accelerated degradation test is performed on the MOSFET;

[0042] Step 4. In the accelerated degradation test, according to the speed of degradation, collect and store the Miller plateau voltage in ...

specific Embodiment approach 2

[0051] Specific Embodiment 2. This embodiment is a further description of the MOSFET degradation evaluation method based on the Miller plateau voltage described in Embodiment 1. In this embodiment, the actual working circuit in the step 1 is Boost DC / DC voltage circuit. The Boost DC / DC boost circuit is a DC boost circuit.

specific Embodiment approach 3

[0052] Specific Embodiment 3. This embodiment is a further description of the MOSFET degradation evaluation method based on the Miller platform voltage described in Embodiment 1. In this embodiment, the step 2 is extracted from the collected voltage value. The proposed method to obtain the Miller plateau voltage is as follows: denoise the collected voltage value and perform second-order derivation, and take the maximum value of the second-order derivative in the MOSFET turn-on stage, which is the Miller plateau voltage.

technical field

[0001] The invention relates to the fields of semiconductor degradation evaluation and lifetime prediction. Background technique

[0002] Due to its fast turn-on speed and good thermal stability, power MOSFETs are widely used in power electronic circuits of hybrid vehicles, aerospace vehicles and other equipment. In recent years, with the rapid development of microelectronic device processing technology, the channel length and gate oxide thickness of the device have been continuously reduced, the dynamic characteristics of the device have also been improved, and the power loss and cost have been significantly reduced. However, while the size of the device is shrinking, the degradation of the hot carrier injection of the MOSFET and the breakdown of the gate oxide layer over time are more significant, and the resulting accumulation of oxide layer and interface state defect damage will eventually lead to the loss of controllability of the gate of the MOSFET. , ...

Examples

specific Embodiment approach 1

[0038] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One, this embodiment is specifically described with reference to the figure, the MOSFET degradation evaluation method based on the Miller plateau voltage described in this embodiment, the degradation evaluation method includes the following steps:

[0039] Step 1. Connect the MOSFET to the actual working circuit, collect and store the gate-source voltage waveform at the moment when the MOSFET is turned on;

[0040] Step 2, extracting the Miller plateau voltage from the collected voltage waveform, and storing, the Miller plateau voltage is recorded as the initial value of the Miller plateau voltage;

[0041] Step 3. According to the time-dependent breakdown degradation (TDDB) mechanism of the gate oxide layer of the MOSFET, an accelerated degradation test is performed on the MOSFET;

[0042] Step 4. In the accelerated degradation test, according to the speed of degradation, collect and store the Miller plateau voltage in ...

specific Embodiment approach 2

[0051] Specific Embodiment 2. This embodiment is a further description of the MOSFET degradation evaluation method based on the Miller plateau voltage described in Embodiment 1. In this embodiment, the actual working circuit in the step 1 is Boost DC / DC voltage circuit. The Boost DC / DC boost circuit is a DC boost circuit.

specific Embodiment approach 3

[0052] Specific Embodiment 3. This embodiment is a further description of the MOSFET degradation evaluation method based on the Miller platform voltage described in Embodiment 1. In this embodiment, the step 2 is extracted from the collected voltage value. The proposed method to obtain the Miller plateau voltage is as follows: denoise the collected voltage value and perform second-order derivation, and take the maximum value of the second-order derivative in the MOSFET turn-on stage, which is the Miller plateau voltage.

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