Packaging structure of pressure sensor and manufacturing method thereof

A pressure sensor and packaging structure technology, which is applied in semiconductor/solid-state device manufacturing, piezoelectric/electrostrictive/magnetostrictive devices, semiconductor devices, etc., can solve the problems of low packaging efficiency and poor reliability, and achieve low packaging resistance , Improve reliability and improve production efficiency

CN105489569BActive Publication Date: 2020-01-07HEFEI SMAT TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2020-01-07

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Abstract

The invention discloses a packaging structure of a pressure sensor and a manufacturing method thereof. The packaging structure of the pressure sensor, including the pressure sensor, includes a pressure-sensitive structure that senses external pressure and an outwardly drawn electrode that converts the sensed pressure information into an electrical signal; the pressure-sensitive structure and electrodes are located on the first side of the pressure sensor surface; an insulating layer, the first surface of which is in contact with the second surface of the pressure sensor; the first metal bump connected to the electrodes; the second metal bump connected to the corresponding first metal bump through a metal connection structure metal bump; plastic package, used to fully encapsulate the first metal bump and the metal connection structure, and partially encapsulate the pressure sensor, the insulating layer and the second metal bump, so as to expose the pressure sensitive structure area of ​​the pressure sensor, and The second metal bump and the insulating layer are exposed.
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Description

technical field

[0001] The invention relates to packaging and manufacturing technology of semiconductor devices, in particular to a packaging structure and packaging method of a pressure sensor. Background technique

[0002] Using the piezoresistive effect of semiconductor silicon, that is, the physical phenomenon that the resistance or resistivity of semiconductor silicon will change significantly when it is subjected to pressure, piezoresistive pressure sensors have been rapidly developed and promoted.

[0003] At the heart of the pressure sensor is a thin-film structure comprising a piezoresistive bridge circuit above a sealed cavity. The pressure-sensitive structure and circuit of the pressure sensor are fabricated above the device, and the film structure with the function of sensing external pressure cannot be inverted, so that the pressure sensor with this structure can only lead out electrical signals through wire bonding.

[0004] figure 1 A schematic diagram 100 s...

Examples

Embodiment Construction

[0045] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0046] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0047] If it is to describe the situation directly on another layer or an...