A tool, a method for processing single crystal silicon carbide material, and a processing device

Abstract

The present invention relates to the field of mechanical processing technology, and provides a tool, a processing method and processing equipment for single-crystal silicon carbide materials. The tool of the present invention, at least the tool head is made of single-crystal silicon carbide material, has excellent mechanical strength, thermal stability and chemical stability, and is suitable for ultra-precision processing. The present invention uses an electrolyte jet-assisted grinding method to process single-crystal silicon carbide materials, so that the oxide film generated after the workpiece surface is oxidized at high speed is immediately ground away, which can increase the grinding accuracy and grinding efficiency, and no damage layer will be formed on the surface of the single-crystal silicon carbide after grinding; the processing equipment for processing single-crystal silicon carbide materials includes a grinding device and a jet device, the jet device is used to spray electrolyte on the single-crystal silicon carbide workpiece, and the grinding device is used to grind the single-crystal silicon carbide material after the electrolyte is sprayed, thereby avoiding secondary damage and improving grinding efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of mechanical processing, and in particular to a tool, a processing method and a processing device for a single crystal silicon carbide material. Background Art

[0002] Cutting tools are tools used for processing in mechanical manufacturing, including turning tools, milling cutters, planers, drill bits, etc. Ordinary cutting tools are prone to wear during processing, or they are prone to shear damage to the workpiece, such as causing processing deformation and metamorphic layers in the workpiece, which in turn affects the precision processing of the workpiece, resulting in reduced processing accuracy and inability to perform ultra-precision processing. It also affects the performance of the workpiece, greatly reduces processing efficiency, and significantly increases processing costs. Cutting tools used for ultra-precision processing are expensive, and the selectable tool materials are very limited. Currently, the commonly used cutting tools for ultra-precision processing are diamond cutting tools, but the chemical properties of the diamond material itself greatly limit its scope of application. For example, diamond cutting tools cannot be used to process steel materials, otherwise they will deteriorate, causing tool damage and low adaptability. Therefore, it is necessary to provide a cutting tool suitable for ultra-precision processing. Summary of the invention

[0003] The present invention aims to provide a cutting tool suitable for ultra-precision machining, and provides a machining method and a machining device for single-crystal silicon carbide material.

[0004] The technical solution adopted by the present invention to solve the above technical problems is:

[0005] A tool is provided, comprising a tool head, wherein the tool head has a tool tip and a tool edge for machining, and in the tool, at least the tool head is made of single crystal silicon carbide material.

[0006] As an improvement of the above technical solution, at least the surface constituting the blade and the blade tip on the tool head is polished.

[0007] A method for processing a single crystal silicon carbide material is also provided, wherein the single crystal silicon carbide material is processed into a semi-finished product, the surface of the semi-finished product to be processed is subjected to electrolyte jet processing, and then the surface of the semi-finished product on which the electrolyte has been sprayed is subjected to grinding processing.

[0008] As an improvement of the above technical solution, the workpiece after grinding is polished on the surface corresponding to the required polishing.

[0009] As a further improvement of the above technical solution, on the grinding device for performing the grinding process, the part used for grinding is made of a material with a hardness lower than that of single-crystal silicon carbide.

[0010] As a further improvement of the above technical solution, the portion used for grinding is made of aluminum oxide or cerium dioxide material.

[0011] As a further improvement of the above technical solution, the grinding part of the grinding device is subjected to electrolyte jet processing.

[0012] As a further improvement of the above technical solution, when performing electrolyte jet processing, a pulse power supply is applied to the nozzle for spraying the electrolyte and the workpiece to which the electrolyte is required to be sprayed.

[0013] Also provided is a processing device for single-crystal silicon carbide material, comprising a frame, and a grinding device, a jet device and a supporting device arranged on the frame, wherein the grinding device comprises a driving part and a grinding part, the driving part drives the grinding part to rotate, and the grinding part is made of a material with a hardness lower than that of single-crystal silicon carbide; the jet device comprises a nozzle and an electrolyte storage device, the nozzle is connected to the electrolyte storage device; the supporting device comprises a fixing device for fixing the workpiece.

[0014] As an improvement of the above technical solution, it also includes a turntable, the carrying device is arranged on the turntable, and the turntable drives the carrying device to rotate.

[0015] As a further improvement of the above technical solution, the carrying device includes a fixed block and a clamp for clamping the fixed block, and the fixed block is provided with a mounting portion for fixing the workpiece.

[0016] As a further improvement of the above technical solution, it also includes a nozzle adjustment device, which includes a first movable platform and a second movable platform, the nozzle is arranged on the first movable platform, the first movable platform is slidably connected to the second movable platform, and the second movable platform is slidably connected to the frame.

[0017] As a further improvement of the above technical solution, it also includes an electrolyte circulation device, which includes a circulation pipeline. The nozzle is connected to the electrolyte storage device through the circulation pipeline, and a liquid delivery device is arranged on the circulation pipeline.

[0018] As a further improvement of the above technical solution, it also includes a pulse power supply device, which connects the nozzle and the workpiece to be processed.

[0019] As a further improvement of the above technical solution, the grinding part is a grinding wheel or a grinding head.

[0020] The beneficial effects of the present invention are:

[0021] The tool of the present invention is made of single-crystal silicon carbide material, has excellent mechanical strength, thermal stability and chemical stability, and is suitable for ultra-precision machining. The present invention uses an electrolyte jet-assisted grinding method to process single-crystal silicon carbide material, so that the oxide film generated after the workpiece surface is oxidized at high speed is immediately ground away, which can increase the grinding accuracy and grinding efficiency, and no damage layer will be formed on the surface of the single-crystal silicon carbide after grinding; the processing equipment for processing single-crystal silicon carbide material includes a grinding device and a jet device, the jet device is used to spray electrolyte on the single-crystal silicon carbide material, and the grinding device is used to grind the single-crystal silicon carbide material after the electrolyte is sprayed, thereby avoiding secondary damage and improving grinding efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following is a brief description of the drawings required for describing the embodiments:

[0023] Figure 1 It is a structural schematic diagram of an embodiment of a tool of the present invention;

[0024] Figure 2 It is a schematic diagram of a first embodiment of the processing equipment of the present invention;

[0025] Figure 3 It is a three-dimensional structural schematic diagram of a part of the structure of the first embodiment of the processing equipment of the present invention;

[0026] Figure 4 for Figure 3 A schematic structural diagram of an embodiment of a middle nozzle adjustment device;

[0027] Figure 5 for Figure 4 A schematic diagram from another angle;

[0028] Figure 6 It is a schematic diagram of a second embodiment of the processing equipment of the present invention;

[0029] Figure 7 It is a three-dimensional structural schematic diagram of a part of the structure of the second embodiment of the processing equipment of the present invention;

[0030] Figure 8 It is a schematic diagram of a third embodiment of the processing equipment of the present invention. DETAILED DESCRIPTION

[0031] Tools are tools used for processing in mechanical manufacturing, including turning tools, milling cutters, planers, drill bits, etc. The existing technology mainly uses cemented carbide (WC), cubic boron carbide (CBN) or polycrystalline diamond (PCD) as tool materials. These tool materials are polycrystalline materials sintered from fine particles, so there are multiple grain boundaries on the blade, and the crystal arrangement and shape are irregular. Due to the existence of grain boundaries, the tool is prone to shear damage to the workpiece during processing, which in turn causes processing deformation and metamorphic layers in the processed workpiece, resulting in reduced processing accuracy and affecting the performance of the workpiece. For example, cemented carbide tools are prone to wear under high-speed processing, and in severe cases, tool chipping and fracture will occur, greatly reducing processing efficiency and significantly increasing processing costs. The processing deformation of the tool on the workpiece will also limit the performance of the workpiece. For example, when cubic boron nitride tools are processing steel metals, nickel-based alloys, aluminum alloys and copper with high plasticity, they are prone to serious built-up edges, which deteriorates the quality of the processed surface. On the other hand, when performing ultra-precision micro-machining, the chemical stability of the tool becomes an important reference indicator. Commonly used single crystal diamond tools will cause chemical reactions between diamond tools and materials to generate graphite when ultra-precision cutting iron materials, which will cause the hardness of the tool to drop sharply, the tool to deteriorate, and the cutting ability to decrease. Therefore, diamond tools cannot process steel materials and have limitations. On the other hand, most of the current grinding and polishing of single crystal silicon carbide is concentrated on two-dimensional planes, making it impossible to achieve a breakthrough in the technology of single crystal silicon carbide tools for processing three-dimensional structures.

[0032] The present invention provides a single-crystal silicon carbide tool, which is made of single-crystal silicon carbide material. Single-crystal silicon carbide (SiC) is a single-crystal material. Compared with existing polycrystalline tools, it has very good thermal stability and chemical stability, and does not have problems such as shear damage of workpieces caused by grain boundaries. Its hardness is second only to diamond, and it has excellent heat resistance and mechanical strength, high wear resistance and long service life. It solves the technical problems that existing tools are prone to wear during processing, or are prone to shear damage of workpieces. The density of single-crystal silicon carbide tools is quite high, and there are no pores on its surface. In addition to the above description, single-crystal silicon carbide tools also have the advantages of anti-magnetization, anti-oxidation, and no rust.

[0033] Single crystal silicon carbide is currently mainly used in the semiconductor industry. The existing processing method is used to process single crystal silicon carbide. The surface of single crystal silicon carbide processed by diamond wire saw is rough and has poor flatness, which requires further grinding process. The grinding process generally uses a diamond grinding wheel to grind its surface, but because single crystal silicon carbide has ultra-high hardness, the grinding efficiency is low and the diamond grinding wheel is severely worn during mechanical grinding. In addition, the grinding process will cause secondary damage to the surface of single crystal silicon carbide, so that after grinding, its surface roughness is still difficult to meet the requirements. It is still necessary to perform chemical mechanical polishing on it, and chemical mechanical polishing takes a long time and is prone to produce polishing liquid residue. Therefore, there is currently no mature process for grinding single crystal silicon carbide, and the damaged layer after grinding is inevitable. The present invention adopts an electrolyte jet-assisted grinding method to avoid secondary damage and improve grinding efficiency.

[0034] The following will clearly and completely describe the concept, specific structure and technical effects of the present invention in combination with the embodiments and drawings, so as to fully understand the purpose, characteristics and effects of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, other embodiments obtained by technicians in this field without creative work are all within the scope of protection of the present invention. In addition, all the connection / connection relationships involved in the patent do not simply refer to the direct connection of components, but refer to the formation of a better connection structure by adding or reducing connecting accessories according to the specific implementation situation. The description of the upper, lower, left, right and other directions involved in the present invention is only relative to the relative position relationship of the various components of the present invention in the drawings. The various technical features in the present invention can be combined interchangeably without conflicting with each other.

[0035] Figure 1 FIG. 1 is a schematic diagram of a structure of an embodiment of a tool of the present invention, referring to FIG. Figure 1The tool 10 includes a tool holder 11 and a tool head 12. The tool head 12 is fixedly arranged on the tool holder 11. The tool head 12 has a blade 13 and a tool tip 14 for processing. In the tool 10, at least the tool head 12 is made of single-crystal silicon carbide material. The tool holder 11 can be made of single-crystal silicon carbide material or other materials, and is used to fix the tool head. Since single-crystal silicon carbide material has excellent mechanical strength, thermal stability and chemical stability, it effectively solves the technical problems of existing tools being prone to wear during ultra-precision processing, prone to shear damage of workpieces, and easy deterioration of tools, and is therefore suitable for ultra-precision processing. The cutter head 12 includes a first cutting surface 121, a second cutting surface 122 and a third cutting surface 123 intersecting on both sides of the first cutting surface 121, wherein the second cutting surface 122 intersects with the first cutting surface 121 to form a first cutting edge 131, and the third cutting surface 123 intersects with the first cutting surface 121 to form a second cutting edge 132. The intersection of the first cutting surface 121, the second cutting surface 122 and the third cutting surface 123 forms a cutting tip 14, and the intersection is connected in an arc to form an arc-shaped cutting tip. The surface of at least the cutting edge 13 and the cutting tip 14 on the cutter head 12 is polished to further optimize the surface roughness, so that the cutting edge is sharper, thereby improving the processing accuracy of the tool 10, so that it is suitable for ultra-precision processing. The cutter head 12 can be fixed on the cutter seat 11 by welding or the like, and the cutter head 12 and the cutter seat 11 can also be an integrally formed structure. The cutter seat 11 is provided with a mounting hole 15 for clamping and mounting, so as to facilitate clamping and replacement.

[0036] For cutting tools, the surface finish of the tool tip and blade is required to be relatively high in order to obtain the corresponding processing accuracy. However, for single-crystal silicon carbide materials, the surface roughness of single-crystal silicon carbide workpieces obtained by existing grinding processing methods is relatively large and cannot meet the requirements of tool processing accuracy. Therefore, the development of single-crystal silicon carbide in the field of cutting tools is limited. The present invention adopts an electrolyte jet-assisted grinding method to process single-crystal silicon carbide workpieces. Compared with the existing processing methods, secondary damage is avoided, higher finish can be obtained, and grinding efficiency can be improved. This processing method can be used to process single-crystal silicon carbide cutting tools, and single-crystal silicon carbide cutting tools with smaller surface roughness can be obtained, thereby helping to improve the precision of tool processing and meet the needs of ultra-precision processing.

[0037] The processing method of the single crystal silicon carbide material of the present invention is as follows:

[0038] The single crystal silicon carbide material is processed into a semi-finished product. In specific implementation, the ultra-precision electric spark wire cutting technology can be used to cut the single crystal silicon carbide material into the required semi-finished product. The ultra-precision electric spark wire cutting technology is a mature technology with extremely high precision. Therefore, the shape of the cut semi-finished product is the basic shape of the required workpiece. For example, when processing a single crystal silicon carbide tool, the single crystal silicon carbide material is processed into a tool semi-finished product, and the shape of the tool semi-finished product is the basic shape of the tool. A whole piece of single crystal silicon carbide material can be processed into several semi-finished products. The ultra-precision electric spark wire cutting method is used to improve the shape accuracy of the tool, shorten the manufacturing time, and improve the cost performance.

[0039] Electrolyte jet machining is performed on the surface of the semi-finished product to be processed, which can cause the surface of the single-crystal silicon carbide material to be oxidized at high speed. Then, the surface of the semi-finished product that has been sprayed with electrolyte is subjected to high-speed grinding, thereby removing the cutting damage layer formed on the surface after the wire cutting is completed. Here, "subsequently" indicates the continuity of the previous process and the next process, that is, after the workpiece is subjected to electrolyte jet machining, grinding is directly performed, thereby ensuring that the oxide film generated after the high-speed oxidation of the workpiece surface is immediately ground and removed, which can increase the grinding accuracy and grinding efficiency. After grinding, no damage layer will be formed on the surface of the single-crystal silicon carbide, the accuracy is high, and the surface roughness that can be achieved is small; the electrolyte uses low-hardness abrasives to achieve sub-surface zero damage. When processing single-crystal silicon carbide tools, not only can the tool face be plane ground, but also the tool tip can be curved ground to prevent the poor surface quality of the tool tip from affecting the tool performance and processing accuracy. Ultra-low concentration neutral electrolyte can be used, which does not pollute the environment after use and can be recycled.

[0040] On the workpiece after the above grinding process, a chemical mechanical polishing process or an online electrolytic dressing grinding process can be used to further polish the surface to be polished to further improve the surface quality. After the polishing process is completed, the workpiece is cleaned. When processing a single crystal silicon carbide tool, this method can be used to further polish the surface of the blade 13 and the tip 14 on the tool head to improve the surface finish of the tool head, so that the blade is sharper, thereby improving the processing accuracy of the tool. Of course, the entire surface of the tool head can also be polished.

[0041] In the above processing method, the abrasive used for grinding on the grinding device for grinding is composed of a material with a lower hardness than single-crystalline silicon carbide, thereby avoiding damage to the surface of the single-crystalline silicon carbide workpiece and achieving a higher surface finish. The material can be alumina or cerium dioxide, etc., a material with a lower hardness than single-crystalline silicon carbide.

[0042] In specific implementation, the grinding part of the grinding device can also be processed by electrolytic jet, so that the grinding part undergoes electrolytic corrosion, exposing sharp abrasive grains, achieving the grinding function, and making the grinding part in the highest grinding performance state during the grinding operation, which helps to improve the grinding efficiency.

[0043] Before performing electrolyte jet machining, applying pulse power to the nozzle used to spray the electrolyte and the single-crystal silicon carbide workpiece to be machined helps improve the shape accuracy of the workpiece. The relative position of the nozzle and the workpiece can be adjusted according to the requirements of the machining material for selective grinding. For single-crystal silicon carbide materials, there are difficult-to-machine areas and easy-to-machine areas on the machining surface. The jet machining time for the difficult-to-machine areas can be appropriately increased, and the jet machining time for the easy-to-machine areas can be relatively reduced to achieve the best grinding effect. Compared with traditional electrolytic grinding, the machining process does not require the grinding part (such as the grinding wheel) to be energized, so the grinding part binder is not limited to the use of metal binders, but non-metal binders, such as resin binders or ceramic binders, can also be used, which increases the range of optional materials for the grinding part.

[0044] The above processing method realizes the composite processing of electrolyte jet efficient oxidation technology and high-speed grinding, is suitable for the processing of various single-crystal silicon carbide workpieces, can avoid damage to the surface of single-crystal silicon carbide during processing, thereby obtaining a higher surface finish, and has high processing efficiency, and is suitable for industrial promotion and use. The above processing method can be used to process single-crystal silicon carbide tools. The electrolyte is sprayed at a certain speed using a nozzle onto the surface of the single-crystal silicon carbide processing area for high-speed oxidation. A grinding wheel material with a lower hardness than single-crystal silicon carbide, such as an aluminum oxide (Al2O3) grinding wheel or a cerium dioxide (CeO2) grinding wheel, is used to grind the surface of the single-crystal silicon carbide. During the grinding process, the tool surface is flat ground and the tool tip is curved ground to produce the required radius of the single-crystal silicon carbide tool tip. The use of this method for grinding can multiply the grinding efficiency of single-crystal silicon carbide and will not cause a damage layer to the surface of the single-crystal silicon carbide. After grinding, the surface roughness basically reaches the technical indicators after chemical mechanical polishing or reaches the industrial use standard, which can reduce the process of single-crystal silicon carbide processing and greatly reduce the processing time of single-crystal silicon carbide. The traditional cutting tools described above will inevitably cause scratches on the surface of the workpiece material during cutting, and the cutting tools made by traditional technology are difficult to cut nano-level materials. The single-crystal silicon carbide cutting tools formed by the processing method can realize ultra-precision cutting of the workpiece, and the damage to the processing surface is extremely small. Due to the excellent thermal stability and chemical stability of the single-crystal silicon carbide material, the workpiece will not be sheared and damaged by the metamorphic layer, and the single-crystal silicon carbide cutting tools produced by the present invention can achieve nano-level processing accuracy and minimal damage to the workpiece surface. The arc radius of the cutting tip can reach the nano-level, thereby achieving nano-level cutting accuracy and realizing ultra-precision fine processing. It can be applied to the cutting of biological tissues (such as cells), the processing of organic glass (acrylic) lenses, the processing of difficult-to-process alloys such as titanium alloys or nickel alloys, the processing of softer materials such as carbon fiber, pure copper, and pure iron, etc., and can also be applied to mechanical assembly line production to improve production efficiency and processing quality and reduce production costs.

[0045] Figure 2 is a schematic diagram of a first embodiment of a processing device of the present invention, Figure 3 This is a three-dimensional structural diagram of a partial structure of the first embodiment of the processing equipment of the present invention, and reference is also made to Figure 2 , 3 Based on the above-mentioned single crystal silicon carbide processing method, the present invention also provides a processing device for processing single crystal silicon carbide materials, including a frame (not shown), and a grinding device 20, a jet device 30 and a carrying device 40 arranged on the frame. Figure 1 The tool shown is an example.

[0046] The grinding device 20 includes a driving unit 21, a rotating shaft 22, and a grinding unit 23 disposed on the rotating shaft 22. The driving unit 21 drives the rotating shaft 22 to drive the grinding unit 23 to rotate so as to grind the workpiece. The grinding unit 23 is made of a material with a lower hardness than single-crystal silicon carbide, which can avoid damage to the surface of the single-crystal silicon carbide workpiece, thereby achieving a higher surface finish. The driving unit 21 can be a motor, and the grinding unit 23 can be a grinding wheel or a grinding head. A rotating shaft chuck for clamping the grinding wheel or the grinding head is disposed on the rotating shaft.

[0047] The jet device 30 includes a nozzle 31 and an electrolyte storage device 32. The electrolyte storage device 32 is used to store electrolyte. The nozzle 31 is connected to the electrolyte storage device 32. The electrolyte is jet-processed through the nozzle 31. In this embodiment, the nozzle 31 is horizontally arranged, the grinding part 23 is vertically arranged, and a pulse power supply device 50 is also included. The pulse power supply device 50 connects the nozzle 31 and the workpiece to be processed, which helps to improve the shape accuracy of the workpiece.

[0048] The bearing device 40 includes a base 42 and a fixing device 41 for fixing the workpiece, the fixing device 41 is fixedly mounted on the base 42, and the workpiece is fixedly mounted by the fixing device 41 for processing. The processing equipment also includes a turntable 60, which is a precision turntable. The bearing device 40 is arranged on the turntable 60, and the turntable 60 drives the bearing device 40 to rotate, so that the processing surface of the workpiece can be adjusted. For example, when the grinding position is fixed, the bearing device 40 can be driven to rotate by the turntable 60, so as to adjust the surface to be processed of the workpiece, and the processing of the curved surface can be realized at this time. The turntable 60 is arranged on a machine tool (not shown) with a moving part, and the movement of the moving part of the machine tool drives the turntable 60 to move, so as to realize the position movement of the single crystal silicon carbide workpiece.

[0049] The fixing device 41 includes a fixing block 411 and a clamp 412 for clamping an auxiliary workpiece. The fixing block 411 is provided with a mounting portion 413 for fixing the single-crystal silicon carbide workpiece. The mounting portion 413 can be a conventional mounting hole. The single-crystal silicon carbide workpiece can be fixedly mounted on the fixing block 411 through the mounting portion 413 to avoid the clamp 412 directly clamping the single-crystal silicon carbide workpiece and causing surface damage. Figure 1 When the tool shown is used for processing, the tool holder 11 can be fixedly mounted on the fixing block 411 through the mounting hole 15 on the tool holder 11 and the mounting portion 413 , thereby achieving fixed mounting of the tool 10 .

[0050] It also includes an electrolyte circulation device 70, which includes a circulation pipeline 71, a liquid delivery device 72, a water tank 73, and a filtering device 74. The nozzle 31 is connected to the electrolyte storage device 32 through the circulation pipeline 71. The circulation pipeline 71 is provided with a liquid delivery device 72, which can be an electrolyte circulation pump. The electrolyte circulation pump can deliver the electrolyte in the electrolyte storage device 32 to the nozzle 31 for electrolyte jet processing. The water tank 73 is received under the workpiece, and the turntable 60 can be placed in the water tank 73. The water tank is fixed to the frame. The electrolyte after injection can flow into the water tank 73, and then flow back through the circulation pipeline 71, and flow back to the nozzle 31 after filtering through the filtering device 74, thereby realizing the circulation of the electrolyte.

[0051] It also includes a nozzle adjustment device 80, which can fine-tune the position of the nozzle 31. After installation, the horizontal position of the nozzle can be adjusted so that the relative position of the grinding part and the nozzle can be adjusted according to different situations to achieve the best processing effect.

[0052] Figure 4 for Figure 3 A schematic diagram of the structure of an embodiment of the nozzle adjustment device, Figure 5 for Figure 4 Another angle diagram, refer to Figure 3 , 4 5. The nozzle adjustment device 80 includes a first movable platform 81 and a second movable platform 82. The nozzle 31 is arranged on the first movable platform 81. The first movable platform 81 is slidably connected to the second movable platform 82. The second movable platform 82 is slidably connected to the frame. The sliding connection here can be achieved by setting a sliding assembly 88 with a slide rail and a slider between the two. The sliding directions of the first movable platform 81 and the second movable platform 82 are perpendicular to each other, so that the plane movement of the nozzle 31 can be achieved by adjusting the nozzle 31 in two orthogonal directions. The first movable platform 81 is locked on the second movable platform 82 by a first locking member 83. When the first locking member 83 is locked, the first movable platform 81 is restricted from sliding. When it is released, the first movable platform 81 can slide relative to the second movable platform 82. A first adjustment device 84 is also arranged between the first movable platform 81 and the second movable platform 82. The sliding direction and displacement of the first movable platform 81 relative to the second movable platform 82 are adjusted by the first adjustment device 84. The second movable platform 82 is locked on the adjustment frame 87 fixedly connected to the frame by the second locking member 85. When the second locking member 85 is locked, the second movable platform 82 is restricted from sliding. When the second locking member 85 is released, the second movable platform 82 can slide relative to the adjustment frame 87. A second adjusting device 86 is also provided between the second movable platform 82 and the adjustment frame 87. The sliding direction and displacement of the second movable platform 82 relative to the adjustment frame 87 are adjusted by the second adjusting device 86.

[0053] The first adjusting device 84 includes a first adjusting rod 841, a first base block 842 and a first adjusting block 843. The first base block 842 is fixedly connected to the second movable platform 82, and the first adjusting block is fixedly connected to the first movable platform 81. The first adjusting rod 841 is connected to the first base block 842 and one end is spirally connected to the first adjusting block, so that when the first adjusting rod 841 rotates, it can drive the first adjusting block 843 to move, thereby realizing the position movement of the first movable platform 81.

[0054] The second adjusting device 86 includes a first adjusting rod 861, a second base block 862 and a second adjusting block 863. The second base block 862 is fixedly connected to the second movable platform 82, and the second adjusting block is fixedly connected to the second movable platform 81. The second adjusting rod 861 is connected to the second base block 862 and has two ends spirally connected to the second adjusting block, so that when the second adjusting rod 861 rotates, it can drive the second adjusting block 863 to move, thereby realizing the position movement of the second movable platform 82.

[0055] The nozzle adjustment device 80 can also be composed of a pair of orthogonal linear slides. The relative position of the nozzle 31 and the workpiece is adjusted according to the requirements of the processing material to perform selective grinding. For single-crystal silicon carbide materials, there are difficult-to-process areas and easy-to-process areas on the processing surface. The grinding time and / or jet processing time for the difficult-to-process areas can be appropriately increased, and the jet processing time for the easy-to-process areas can be relatively reduced to achieve the best grinding effect.

[0056] Figure 6 is a schematic diagram of a second embodiment of the processing equipment of the present invention, Figure 7 This is a three-dimensional structural diagram of a part of the structure of the second embodiment of the processing equipment of the present invention, and reference is also made to Figure 6 , 7The difference between this embodiment and the first embodiment is that the nozzle 31 is installed vertically, and the electrolyte can be jet-processed from the top to the surface of the single-crystal silicon carbide workpiece. The nozzle 31 is connected to the frame. During processing, the controller is used to start the shaft 22, increase the rotation speed of the shaft 22 to a specified speed, start the power supply, and use the signal generator to make the power supply apply pulse power to the workpiece and the nozzle 31. The function of the pulse power supply is to improve the shape accuracy of the processed single-crystal silicon carbide workpiece; start the liquid feeding device 72, so that the electrolyte is sprayed from top to bottom through the nozzle 31, and the moving parts of the machine tool are controlled to move the position of the single-crystal silicon carbide workpiece so that the part of its surface that needs to be processed first contacts the electrolyte, and then continues to move on the surface of the electrolyte and is contacted by the grinding wheel, thereby ensuring that the oxide film generated after the workpiece surface is oxidized is immediately removed by the mechanical action of the grinding part 23, thereby increasing the grinding accuracy and grinding efficiency. When the curved surface needs to be ground, the turntable 60 is controlled to rotate, and the relative angle between the nozzle 31 and the grinding part 23 and the nozzle 31 can be accurately controlled, so that the nozzle 31 circulates along the curved surface path of the workpiece, and the grinding wheel circulates and grinds the curved surface. Figure 1 When the tool tip 14 of the single crystal silicon carbide tool 10 is being cut, the turntable 60 rotates to cause the nozzle 31 to cyclically move along the arc path of the tool tip 14, and the grinding wheel cyclically grinds the tool tip 14.

[0057] Figure 8 FIG. 1 is a schematic diagram of a third embodiment of the processing equipment of the present invention, referring to FIG. Figure 8 The difference between this embodiment and the first embodiment is that the grinding device 20 is installed horizontally, the grinding part 23 is a grinding wheel, and when processing a single-crystal silicon carbide workpiece, a controller is used to start the rotating shaft 22 to increase the rotating speed of the rotating shaft 22 to a specified speed; the power supply is started, and a signal generator is used to make the power supply apply a pulse power supply to the single-crystal silicon carbide workpiece and the nozzle 31. The function of the pulse power supply is to improve the shape accuracy of the processed single-crystal silicon carbide workpiece; the liquid feeding device 72 is started to spray the electrolyte onto the workpiece surface through the nozzle 31; the movement of the moving parts of the machine tool is controlled. When moving, the part of the workpiece surface that needs to be processed first contacts the electrolyte, and then the vertical position of the spindle and the horizontal position of the workpiece are controlled so that the grinding wheel on the spindle contacts the surface of the workpiece to start grinding. This grinding method can ensure that the oxide film generated after the workpiece surface is oxidized is removed by the mechanical action of the grinding wheel, thereby increasing the grinding accuracy and grinding efficiency.

[0058] The following steps can be used to process single crystal silicon carbide materials using processing equipment:

[0059] Connect the rotating shaft and the driving part, and the driving part is controlled by its controller. The rotating shaft is installed on the Z axis of the machine tool and the vertical position of the rotating shaft is fixed.

[0060] Connect the grinding part to the rotating shaft, install the nozzle into the mounting port of the nozzle fixture, connect the nozzle to the circulation loop, and the electrolyte circulation pump circulates back to the nozzle to continue to spray onto the workpiece surface.

[0061] The semi-finished workpiece of single crystal silicon carbide material to be processed is fixed on the turntable. The power supply is started, and a signal generator is used to make the power supply apply pulse power to the workpiece and the nozzle.

[0062] Start the electrolyte circulation pump to spray the electrolyte toward the workpiece. Control the movement of the moving parts of the machine tool so that the part of the workpiece to be processed first contacts the electrolyte, and the surface sprayed with the electrolyte is then contacted and ground by the grinding part. When the horizontal position of the nozzle needs to be adjusted, the nozzle adjustment device can be adjusted to adjust the horizontal position of the nozzle, thereby accurately controlling the relative position between the nozzle and the grinding wheel and between the nozzle and the workpiece.

[0063] When grinding the arc surface, the turntable is controlled to rotate, and the relative angle between the nozzle and the grinding part can be accurately controlled, so that the direction of the curved surface is turned to the direction of the grinding wheel and the nozzle, and the grinding wheel performs cyclic grinding on the curved surface.

[0064] The above are only preferred embodiments of the present invention, but the present invention is not limited to the above embodiments. Those skilled in the art may make various equivalent modifications or substitutions without violating the spirit of the present invention. These equivalent modifications or substitutions are all included in the scope defined by the claims of this application.

Claims

1. A method for processing single crystal silicon carbide material, characterized in that: Used to process the blade surface and blade tip of a single-crystal silicon carbide tool, the single-crystal silicon carbide material is cut to form a semi-finished tool, the shape of the cut semi-finished product is the basic shape of the required tool, a pulse power supply is applied to the nozzle for spraying electrolyte and the semi-finished product, the position of the single-crystal silicon carbide tool is moved so that the part of its surface that needs to be processed first contacts the electrolyte, the surface of the semi-finished product to be processed is subjected to electrolyte jet processing to form an oxide film, and then the position of the tool is continued to be moved, and the surface of the semi-finished product that has been sprayed with electrolyte is ground to remove the oxide film; when it is necessary to grind a curved surface, the nozzle is made to circulate along the arc path of the blade tip, and during the grinding process, the blade surface is flat ground and the blade tip is curved ground to machine the required radius of the single-crystal silicon carbide blade tip, wherein, on the grinding device for performing the grinding process, the abrasive used for grinding is composed of a material with a hardness lower than that of single-crystal silicon carbide.

2. The processing method according to claim 1, characterized in that: After the grinding process, the workpiece is polished on the surface that needs to be polished.

3. The processing method according to claim 1, characterized in that: The abrasive used for grinding is composed of aluminum oxide or cerium oxide material.

4. The processing method according to claim 1, characterized in that: Electrolyte jet machining is performed on the grinding part of the grinding device.

5. A cutting tool, characterized in that: The tool comprises a tool head having a tool tip and a tool edge for machining, wherein at least the tool head is made of single crystal silicon carbide material, wherein the tool head is machined by the machining method of single crystal silicon carbide material according to any one of claims 1 to 4.

6. The tool according to claim 5, characterized in that: At least the surface constituting the blade edge and the blade tip on the blade head is polished.

7. A processing device for processing a single crystal silicon carbide material, used for implementing the processing method of the single crystal silicon carbide material according to any one of claims 1 to 4, characterized in that: It includes a frame, and a grinding device, a jet device and a bearing device arranged on the frame, wherein: The grinding device comprises a driving part and a grinding part, wherein the driving part drives the grinding part to rotate, and the grinding part is made of a material having a lower hardness than single-crystal silicon carbide; The jet device comprises a nozzle and an electrolyte storage device, wherein the nozzle is connected to the electrolyte storage device; The carrying device includes a fixing device for fixing a workpiece of a single crystal silicon carbide material; A pulse power supply device, the pulse power supply device is connected to the nozzle and the single crystal silicon carbide material workpiece to be processed, and is used to apply a pulse power supply to the nozzle and the workpiece; A turntable, on which the carrying device is arranged, and the turntable drives the carrying device to rotate so as to adjust the surface to be processed of the workpiece; The electrolyte in the electrolyte storage device is jetted onto the surface of the workpiece through the nozzle to form an oxide film on the surface of the workpiece, and the grinding part is used to grind the surface of the workpiece on which the electrolyte has been sprayed to remove the oxide film.

8. The processing equipment according to claim 7, characterized in that: The bearing device comprises a fixing block and a clamp for clamping the fixing block, and the fixing block is provided with a mounting portion for fixing the single crystal silicon carbide material.

9. The processing equipment according to claim 7, characterized in that: It also includes a nozzle adjustment device, which includes a first movable platform and a second movable platform, the nozzle is arranged on the first movable platform, the first movable platform is slidably connected to the second movable platform, and the second movable platform is slidably connected to the frame.

10. The processing equipment according to claim 7, characterized in that: It also includes an electrolyte circulation device, which includes a circulation pipeline. The nozzle is connected to the electrolyte storage device through the circulation pipeline, and a liquid delivery device is arranged on the circulation pipeline.

11. The processing equipment according to claim 7, characterized in that: The grinding part is a grinding wheel or a grinding head.

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