A micro-hotplate gas-sensing array device based on ceramic substrate and a manufacturing method thereof

Abstract

The present invention belongs to the technical field of gas sensor manufacturing, and discloses a micro-hotplate gas-sensitive array device based on a ceramic substrate and a manufacturing method. It includes a porous protective mesh cover, a ceramic micro-hotplate gas-sensitive array chip, a padding ring and a semiconductor tube shell; the ceramic micro-hotplate gas-sensitive array chip is arranged below the porous protective mesh cover, and is fixedly connected to one side of the padding ring; the semiconductor tube shell is fixedly connected to the other side of the padding ring, and the ceramic micro-hotplate gas-sensitive array chip is connected to the pad through a lead. The present invention also discloses a manufacturing method of the corresponding micro-hotplate gas-sensitive array device. The present invention can not only make the gas-sensitive film in the ceramic micro-hotplate gas-sensitive array chip fully contact the atmosphere, but also make the device have certain mechanical properties, effectively avoid the problem of cracking of the silicon wafer due to stress accumulation during thermal shock, improve the stability and reliability of the product, and enable the device to be widely used in various occasions.

Description

Technical Field

[0001] The present invention belongs to the technical field of gas sensor manufacturing, and more specifically, relates to a ceramic substrate-based micro-hotplate gas sensor array device and a manufacturing method thereof. Background Art

[0002] Micro Hot Plate (MHP) based on silicon micromachining technology is a commonly used heating platform in Micro-Electro-Mechanical-Systems (MEMS). It has been widely used in micro devices such as micro gas sensors, thin film calorimeters, micro accelerometers and barometers. The basic structure of a micro hot plate includes a suspended dielectric film and a resistor bar. When current passes through the resistor bar, part of the Joule heat generated by the resistor is used to heat the micro hot plate, and the other part is dissipated in the suspended structure in the surrounding environment by conduction, convection and radiation, so that the micro hot plate has very small thermal inertia and very high electrothermal coupling efficiency. Milliwatt-level thermal power can quickly heat up the central temperature zone within a few milliseconds. Therefore, the micro hot plate has a very fast thermal response time and low thermal power consumption.

[0003] Manufacturing gas-sensitive micro-hotplate structure devices based on the MEMS method can reduce the size of the sensor and reduce the power consumption of the device. At present, the silicon-based micro-hotplate processing technology prepared based on MEMS technology mainly includes three types: back-side bulk silicon processing, front-side bulk silicon processing and surface processing. The main process flow is to use chemical vapor deposition process to deposit a certain thickness of silicon nitride film and silicon oxide film on the silicon wafer substrate, and then use physical vapor deposition process to prepare a patterned resistive heating film, and then use deep silicon etching process to etch away the silicon wafer substrate under the silicon nitride and silicon oxide films, so that the silicon nitride and silicon oxide films are suspended in the air, and a micro-hotplate with good thermal insulation performance is obtained.

[0004] The above analysis shows that the preparation method of the prior art micro-hotplate has the following problems: (1) The silicon wafer is prone to accumulate stress and crack during the thermal shock process, resulting in poor product stability and reliability; (2) The thermal expansion coefficients of the commonly used electrode materials Au and Pt at 0-100°C are 14.2×10 -6 / K and 9.0×10 -6 / K, the thermal expansion coefficient of silicon wafer is: 2.5×10 -6 / K (27℃), so the thermal expansion coefficient of the electrode and the sensitive film is quite different from that of the silicon wafer, and they are easy to fall off during repeated thermal shocks; (3) The heating electrode and the sensitive film are manufactured by coplanar stacking, and there is no temperature buffer between the heating electrode and the sensitive film, which easily leads to uneven temperature. Summary of the invention

[0005] In view of the above defects or improvement needs of the prior art, the present invention provides a micro-hotplate gas-sensing array device based on a ceramic substrate and a manufacturing method, which can not only enable the gas-sensitive films of the temperature measuring electrodes and the temperature measuring resistors in the ceramic micro-hotplate gas-sensing array chip to fully contact the atmosphere without interfering with each other's functions, but also enable the device to have certain mechanical properties, effectively avoiding problems such as cracking of silicon wafers due to stress accumulation during thermal shock, improving the stability and reliability of the product, and allowing the device to be widely used in various occasions.

[0006] In order to achieve the above-mentioned object, according to one aspect of the present invention, a micro-hotplate gas sensing array device based on a ceramic substrate is provided, characterized in that it comprises a porous protective mesh cover, a ceramic micro-hotplate gas sensing array chip, a spacer ring and a semiconductor tube shell; wherein,

[0007] The ceramic micro-hotplate gas-sensing array chip is arranged below the multi-porous protective mesh cover and is fixedly connected to one side of the padding ring;

[0008] The semiconductor tube shell is fixedly connected to the other side of the padding ring, a soldering pad is arranged inside the semiconductor tube shell, and the ceramic micro-hotplate gas-sensing array chip is connected to the soldering pad through a lead wire.

[0009] Furthermore, the ceramic micro-hotplate gas-sensing array chip includes n ceramic micro-hotplate gas-sensing array units arranged in an array, wherein n is an integer not less than 1.

[0010] Furthermore, the ceramic micro-hotplate gas-sensing array unit includes a ceramic substrate, a temperature measuring electrode and a resistance measuring electrode arranged on one side of the ceramic substrate, and a heating electrode arranged on the other side of the ceramic substrate.

[0011] Furthermore, the temperature measuring electrode and the resistance measuring electrode are stacked, wherein the temperature measuring electrode is arranged on a side close to the ceramic substrate; preferably, an insulating layer is provided between the temperature measuring electrode and the resistance measuring electrode to avoid short circuit and ensure that the functions of the temperature measuring electrode and the resistance measuring electrode do not affect each other.

[0012] Furthermore, the temperature measuring electrode and the resistance measuring electrode are coplanarly arranged, wherein the temperature measuring electrode and the resistance measuring electrode are located in the same plane and do not contact each other.

[0013] Further, the thickness of the ceramic substrate is 10 μm-500 μm. Preferably, the thickness of the ceramic substrate is 100 μm. Preferably, the ceramic substrate is an aluminum oxide ceramic substrate.

[0014] Furthermore, the resistance measuring electrode includes a tooth and a gas-sensitive film covering the tooth. Preferably, the gas-sensitive film is a metal oxide.

[0015] Furthermore, a temperature buffer structure is provided in the middle of the ceramic substrate for integrating the temperature measuring electrode, the resistance measuring electrode and the heating electrode. The temperature buffer structure is surrounded by a hollow structure, and the hollow structure is a triangular, quadrilateral, pentagonal or other special-shaped hollow structure; the top corners of the triangular, quadrilateral, pentagonal or other special-shaped hollow structures are all chamfered structures.

[0016] According to another aspect of the present invention, there is provided a method for manufacturing the micro-hotplate gas sensing array device based on a ceramic substrate, comprising the following steps:

[0017] S1: etching and depositing a temperature measuring electrode on the front side of the ceramic substrate, and etching and depositing a heating electrode on the back side of the ceramic substrate;

[0018] S2: etching and depositing a temperature measuring resistance electrode on the top or one side of the temperature measuring electrode;

[0019] S3, according to the patterns of the heating electrode, the temperature measuring electrode and the temperature measuring resistor electrode, a hollow structure is etched around the temperature buffer structure to prepare a ceramic micro-hotplate gas sensing array unit;

[0020] S4: arranging n ceramic micro-hotplate gas-sensing array units in an array to prepare a ceramic micro-hotplate gas-sensing array chip, wherein n is an integer not less than 1;

[0021] S5: fix one side of the heightening ring on the semiconductor tube shell, and then fix the obtained ceramic micro-hotplate gas sensing array chip on the other side of the heightening ring;

[0022] S6 connects the semi-ceramic micro-hotplate gas-sensing array chip to a semiconductor tube shell (4) provided with a pad via a lead wire to lead out a signal;

[0023] S7 directly plugs the porous protective mesh cover and the semiconductor tube shell to obtain a micro-hot plate gas sensing array device.

[0024] Furthermore, the S2 specifically includes the following steps: preparing an insulating layer above the temperature measuring electrode, etching teeth on the insulating layer and the front surface of the ceramic substrate, and covering the surface of the teeth with a gas sensitive film to prepare a temperature measuring resistor electrode;

[0025] Preferably, the S2 specifically includes the following steps: etching a tooth on one side of the temperature measuring electrode, and covering the surface of the tooth with a gas sensitive film to prepare a temperature measuring resistance electrode;

[0026] Preferably, the thickness of the ceramic substrate is 10 μm-500 μm, preferably, the thickness of the ceramic substrate is 100 μm, preferably, the ceramic substrate is an aluminum oxide ceramic substrate;

[0027] Preferably, the thickness of the resistance measuring electrode and the temperature measuring electrode is 10nm-1000nm, preferably, the thickness of the resistance measuring electrode and the temperature measuring electrode is 100nm, the line width of the resistance measuring electrode and the temperature measuring electrode is 1μm-100μm, preferably, the resistance measuring electrode and the temperature measuring electrode are 30μm.

[0028] In general, the above technical solution conceived by the present invention has the following technical advantages compared with the prior art:

[0029] 1. The micro-hotplate gas-sensing array device of the present invention can not only make the gas-sensing films of the temperature-measuring electrodes and the temperature-measuring resistors in the ceramic micro-hotplate gas-sensing array chip fully contact the atmosphere without interfering with each other's functions, but also make the device have certain mechanical properties, effectively avoiding the problem of cracking of silicon wafers due to stress accumulation during thermal shock, and improving the stability and reliability of the product, so that the device can be widely used in various occasions.

[0030] 2. The present invention provides a temperature buffer structure on a ceramic substrate, and a hollow structure is provided around the temperature buffer structure. This characteristic structure is used to form a ceramic substrate of a chip in a micro-hotplate gas-sensitive array device, and a resistance measuring electrode and a temperature measuring electrode are provided on the front side of the ceramic substrate, and a heating electrode is provided on the back side. This stacked and eccentrically arranged structure separates the heating electrode from the resistance measuring electrode and the temperature measuring electrode, thereby having a certain temperature buffer and making the temperature distribution more uniform.

[0031] 3. The present invention manufactures corresponding devices by using a ceramic substrate as a chip material. The ceramic substrate is aluminum oxide. Compared with silicon wafers, the thermal expansion coefficient is closer to the gas-sensitive film material of the electrode (metal oxide), which improves the embarrassing situation that the electrode and the gas-sensitive film are easy to fall off under repeated thermal shocks. Therefore, it has a wide range of application value in the semiconductor device manufacturing process.

[0032] 4. The heating units of the present invention all have a temperature buffer structure, and the temperature buffer structure is surrounded by a hollow structure. The hollow structure can prevent the heat in the unit from being lost too quickly, improve the heating efficiency, and thus greatly reduce power consumption.

[0033] 5. In the micro-hotplate gas-sensing array device of the present invention, an insulating layer is sandwiched between the temperature measuring electrode and the resistance measuring electrode to avoid short circuit and ensure that the functions of the temperature measuring electrode and the resistance measuring electrode do not affect each other.

[0034] 6. The present invention adopts the method of stacking or coplanar arrangement of temperature measuring electrodes, temperature measuring resistor electrodes and heating electrodes. At the same time, the thickness and width of the ceramic substrate (thickness is 10μm-500μm) and the corresponding temperature measuring electrodes and temperature measuring resistor electrodes are correspondingly limited, so that the functions between the mutual structures are not affected, the heating is more uniform, and at the same time, in addition to meeting the size requirements of the micro-hot plate gas sensitive array device, it has the characteristics of compact structure, high stability and reliability.

[0035] 7. The manufacturing method of the micro-hotplate gas-sensing array device of the present invention realizes the laser etching of the ceramic substrate, realizes the functions of completing the temperature and resistance measurement on the front side and heating on the back side, realizes the mass production of the ceramic micro-hotplate gas-sensing array device, and has a wide range of application value in the semiconductor device manufacturing industry. This improves the production and use efficiency of the chip based on the ceramic substrate manufactured based on the MEMS process. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 This is a schematic structural diagram of a micro-hotplate gas-sensing array device based on a ceramic substrate according to an embodiment of the present invention;

[0037] Figure 2 This is a schematic diagram of the front structure of the ceramic micro-hotplate gas-sensing array chip according to an embodiment of the present invention;

[0038] Figure 3 This is a schematic diagram of the reverse structure of the ceramic micro-hotplate gas-sensing array chip according to an embodiment of the present invention;

[0039] Figure 4 This is a schematic diagram of the front structure of a ceramic micro-hotplate gas sensing array unit with a temperature measuring electrode and a resistance measuring electrode stack according to an embodiment of the present invention;

[0040] Figure 5 This is a schematic diagram of the front structure of a ceramic micro-hotplate gas sensing array unit with coplanar temperature measuring electrodes and resistance measuring electrodes according to an embodiment of the present invention;

[0041] Figure 6 Schematic diagram of the reverse structure of the ceramic micro-hotplate gas sensing array unit according to an embodiment of the present invention.

[0042] In all the drawings, the same reference numerals represent the same technical features, specifically: 1-porous protective mesh, 2-ceramic micro-hotplate gas sensitive array chip, 3-heightening ring, 4-semiconductor tube shell, 201-heating electrode, 202-temperature measuring electrode, 203-resistance measuring electrode, 204-insulating layer. DETAILED DESCRIPTION

[0043] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0044] like Figure 1 As shown, a schematic diagram of a micro-hotplate gas-sensitive array device based on a ceramic substrate in an embodiment of the present invention. The array structure includes a porous protective mesh cover 1, a ceramic micro-hotplate gas-sensitive array chip 2, a padding ring 3 and a semiconductor tube shell 4. Among them, the ceramic micro-hotplate gas-sensitive array chip 2 is arranged below the porous protective mesh cover 1, and the ceramic micro-hotplate gas-sensitive array chip 2 is fixedly bonded to one side of the padding ring 3 by a specific glue, and the ceramic micro-hotplate gas-sensitive array chip 2 is connected to the semiconductor tube shell 4 with a pad by wire binding. This structure can not only make the gas-sensitive film in the ceramic micro-hotplate gas-sensitive array chip 2 fully contact the atmosphere, but also make the device have certain mechanical properties, effectively avoid the problem of cracking of the silicon wafer due to stress accumulation during thermal shock, improve the stability and reliability of the product, and enable the device to be widely used in various occasions.

[0045] Furthermore, if Figure 2 and Figure 3 As shown, the ceramic micro-hotplate gas-sensing array unit includes a ceramic substrate, a temperature measuring electrode 202 and a resistance measuring electrode 203 arranged on one side of the ceramic substrate, and a heating electrode 201 arranged on the other side of the ceramic substrate. A temperature buffer structure is arranged in the middle of the ceramic substrate, which is used to integrate the temperature measuring electrode 202, the resistance measuring electrode 203 and the heating electrode 201. The temperature buffer structure is surrounded by a hollow structure, which is a hollow structure of a triangular, quadrilateral, pentagonal or other special-shaped structure; the top corners of the hollow structure of the triangular, quadrilateral, pentagonal or other special-shaped structure are all chamfered structures. The surrounding arrangement of the hollow structure can prevent the heat in the unit from being lost too quickly, improve the heating efficiency, and thus greatly reduce power consumption.

[0046] like Figure 2 and Figure 3 As shown, in one embodiment of the present invention, a 16-array structure is provided, wherein the front side wiring has a temperature measuring electrode 202 pattern and a resistance measuring electrode 203 pattern, and the back side has a heating electrode 201 pattern.

[0047] Furthermore, if Figure 4 , Figure 5 and Figure 6As shown, in the present invention, the ceramic micro-hotplate gas-sensing array chip 2 includes n ceramic micro-hotplate gas-sensing array units arranged in an array, wherein n is an integer not less than 1. The structure of the ceramic micro-hotplate gas-sensing array unit is specifically, including a heating electrode 201, a ceramic substrate, a resistance measuring electrode 203 and a temperature measuring electrode 202. The temperature measuring electrode 202 and the resistance measuring electrode 203 are stacked, wherein the temperature measuring electrode 202 is arranged on one side close to the ceramic substrate; preferably, an insulating layer 204 is provided between the temperature measuring electrode 202 and the resistance measuring electrode 203 to avoid short circuit and make the functions of the temperature measuring electrode 202 and the resistance measuring electrode 203 not affect each other.

[0048] When the temperature measuring electrode 202 and the resistance measuring electrode 203 are arranged in the same plane, the temperature measuring electrode 202 and the resistance measuring electrode 203 are located in the same plane and do not contact each other.

[0049] The resistance measuring electrode 203 includes a tooth and a gas-sensitive film covering the tooth. Preferably, the gas-sensitive film is a metal oxide.

[0050] like Figure 4 , Figure 5 and Figure 6 As shown, the thickness of the ceramic substrate is 10 μm-500 μm. Preferably, the thickness of the ceramic substrate is 100 μm, and the ceramic substrate is an aluminum oxide ceramic substrate.

[0051] In summary, the present invention provides a ceramic substrate with a temperature buffer structure, and the temperature buffer structure is surrounded by a hollow structure. The present invention uses a characteristic structure to form a ceramic substrate of a chip in a micro-hotplate gas-sensitive array device, and sets a resistance measuring electrode and a temperature measuring electrode on the front of the ceramic substrate, and sets a heating electrode on the back. Since the heating electrode and the gas-sensitive film are separated, this structure has a certain temperature buffer, so that the temperature distribution is more uniform. The present invention uses a ceramic substrate as a chip material to manufacture the corresponding device. Compared with the use of silicon wafers, the thermal expansion coefficient is closer to that of the electrode and the gas-sensitive film material, which improves the embarrassing situation that the electrode and the gas-sensitive film are easy to fall off under repeated thermal shocks. Therefore, it has a wide range of application value in the semiconductor device manufacturing process.

[0052] The manufacturing method of the micro-hotplate gas-sensing array device based on a ceramic substrate provided by the present invention is based on laser etching and MEMS technology, and mainly includes a manufacturing method of a micro-hotplate gas-sensing array chip and a packaging method of a corresponding device.

[0053] The main steps of the manufacturing method of the micro-hotplate gas-sensitive array chip include: first, a ceramic sheet of a certain thickness is selected as a substrate, wherein the thickness of the ceramic substrate is 10μm-500μm, preferably, the thickness of the ceramic substrate is 100μm, then photolithography and sputtering are used to obtain the front temperature measuring electrode, the resistance measuring electrode and the back heating electrode, then laser etching is used to obtain the hollow structure of the ceramic substrate used, and then, finally, micro-spraying film forming is used to cover the gas-sensitive film on the insert.

[0054] The packaging method of the micro-hotplate gas-sensing array device mainly includes the following steps: firstly, gluing the padding ring to the semiconductor shell, then gluing the ceramic micro-hotplate gas-sensing array chip to the padding ring, then connecting the chip to the semiconductor shell by wire bonding, then leading out the signal, and finally combining the porous protective mesh cover with the semiconductor shell.

[0055] Specifically, the method for manufacturing the micro-hotplate gas sensing array device of the present invention comprises the following steps:

[0056] S1 etches and deposits the temperature measuring electrode 202 on the front side of the ceramic substrate, and etches and deposits the heating electrode 201 on the back side of the ceramic substrate.

[0057] S2 is to prepare a temperature measuring resistor electrode 203 by etching and depositing on the top or one side of the temperature measuring electrode 202 .

[0058] If the temperature measuring electrode 202 and the temperature measuring resistor electrode 203 are stacked, an insulating layer 204 is prepared above the temperature measuring electrode 202, teeth are etched on the insulating layer 204 and the front side of the ceramic substrate, and a gas sensitive film is covered on the surface of the teeth to prepare the temperature measuring resistor electrode 203.

[0059] If the temperature measuring electrode 202 and the temperature measuring resistor electrode 203 are arranged in the same plane, a tooth is etched on one side of the temperature measuring electrode 202 , and a gas sensitive film is covered on the surface of the tooth to prepare the temperature measuring resistor electrode 203 .

[0060] S3: According to the patterns of the heating electrode 201, the temperature measuring electrode 202 and the temperature measuring resistor electrode 203, a hollow structure is etched around the temperature buffer structure to prepare a ceramic micro-hotplate gas sensing array unit.

[0061] S4: arranging n ceramic micro-hotplate gas-sensing array units in an array to prepare a ceramic micro-hotplate gas-sensing array chip 2, wherein n is an integer not less than 1.

[0062] S5 fixes one side of the raising ring 3 on the semiconductor tube shell 4 , and then fixes the obtained ceramic micro-hotplate gas sensing array chip 2 on the other side of the raising ring 3 .

[0063] S6 connects the semi-ceramic micro-hotplate gas-sensing array chip 2 to the semiconductor tube shell 4 provided with pads through leads to lead out signals.

[0064] S7 directly plugs the porous protective mesh cover 1 and the semiconductor tube shell 4 to obtain a micro-hot plate gas sensing array device.

[0065] In one embodiment of the present invention, the manufacturing method of the micro-hotplate gas sensing array device based on the ceramic substrate is as follows:

[0066] S1 uses a 100μm ceramic sheet as a substrate, uses photolithography and sputtering to obtain the temperature measuring electrode on the front side and the heating electrode on the back side, then obtains the middle insulating layer by screen printing, and then uses photolithography and sputtering again to obtain the measuring teeth; uses micro-spraying to form a film so that a gas-sensitive film is attached to the teeth for preparing the resistance measuring electrode. Specifically, the parameters of 100s of uniform glue, soft baking: hot plate 95℃, 180s, exposure time: 150s, reverse baking: hot plate 100℃, 90s, development 90s, hard film: hot plate 110℃, 180s are used to obtain the front teeth, temperature measuring electrode and the heating electrode pattern on the back side, wherein the thickness of the resistance measuring electrode and the temperature measuring electrode is 10nm-1000nm, preferably 100nm, and the line width of the resistance measuring electrode and the temperature measuring electrode is 1μm-100μm, preferably 30μm.

[0067] (2) According to the patterns of the heating electrode, the temperature measuring electrode and the temperature measuring resistor electrode, the ceramic substrate with the electrode is laser etched, and the ceramic substrate is processed in the order of hollowing, punching and scribing to obtain Figure 2 The hollow structure shown;

[0068] (3) Arranging n ceramic micro-hotplate gas-sensing array units in an array to prepare a ceramic micro-hotplate gas-sensing array chip, wherein n is an integer not less than 1.

[0069] (4) First, fix one side of the raising ring on the semiconductor tube shell by gluing, and then fix the obtained micro-hotplate gas sensing array chip on the other side of the raising ring by gluing.

[0070] (5) The electrodes on the semiconductor chip are connected to the semiconductor tube shell with pads by wire bonding to lead out the signal.

[0071] (6) The porous protective mesh cover is directly plugged into the semiconductor tube shell to obtain a micro-hot plate gas sensing array device.

[0072] The present invention provides a method for manufacturing a micro-hotplate gas-sensing array device based on a ceramic substrate, realizes laser etching of the ceramic substrate, realizes the functions of completing temperature and resistance measurement on the front side and heating on the back side, and realizes mass production of ceramic micro-hotplate gas-sensing array devices. It has a wide range of application value in the semiconductor device manufacturing industry. This improves the production and use efficiency of chips based on ceramic substrates manufactured based on MEMS technology.

[0073] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A micro-hotplate gas sensing array device based on a ceramic substrate, characterized in that: It comprises a porous protective mesh cover (1), a ceramic micro-hotplate gas-sensitive array chip (2), a pad ring (3) and a semiconductor tube shell (4); wherein: The ceramic micro-hotplate gas-sensing array chip (2) is arranged below the porous protective mesh cover (1) and is fixedly connected to one side of the padding ring (3); The semiconductor tube shell (4) is fixedly connected to the other side of the pad ring (3); a solder pad is provided on the inner side of the semiconductor tube shell (4); and the ceramic micro-hotplate gas-sensing array chip (2) is connected to the solder pad via a lead wire; the ceramic micro-hotplate gas-sensing array chip comprises a ceramic substrate, a temperature measuring electrode (202) and a resistance measuring electrode (203) provided on one side of the ceramic substrate, and a heating electrode (201) provided on the other side of the ceramic substrate; The temperature measuring electrode (202) and the resistance measuring electrode (203) are stacked, wherein the temperature measuring electrode (202) is arranged on a side close to the ceramic substrate; A temperature buffer structure is provided in the middle of the ceramic substrate, which is used to integrate the temperature measuring electrode (202), the resistance measuring electrode (203) and the heating electrode (201).

2. The micro-hotplate gas sensing array device according to claim 1, characterized in that: The ceramic micro-hotplate gas-sensing array chip (2) comprises n ceramic micro-hotplate gas-sensing array units arranged in an array, wherein n is an integer not less than 1.

3. The micro-hotplate gas sensing array device according to claim 1 or 2, characterized in that: An insulating layer (204) is provided between the temperature measuring electrode (202) and the resistance measuring electrode (203) to avoid short circuit and ensure that the functions of the temperature measuring electrode (202) and the resistance measuring electrode (203) do not affect each other.

4. The micro-hotplate gas sensing array device according to claim 1 or 2, characterized in that: The temperature measuring electrode (202) and the resistance measuring electrode (203) are arranged in the same plane, wherein the temperature measuring electrode (202) and the resistance measuring electrode (203) are located in the same plane and do not contact each other.

5. The micro-hotplate gas sensing array device according to claim 1, characterized in that: The thickness of the ceramic substrate is 10 μm-500 μm.

6. The micro-hotplate gas sensing array device according to claim 5, characterized in that: The thickness of the ceramic substrate is 100 μm, and the ceramic substrate is an aluminum oxide ceramic substrate.

7. The micro-hotplate gas sensing array device according to claim 1 or 2, characterized in that: The resistance measuring electrode (203) comprises a tooth and a gas sensitive film covering the tooth, wherein the gas sensitive film is a metal oxide.

8. The micro-hotplate gas sensing array device according to claim 1 or 2, characterized in that: The temperature buffer structure is surrounded by a hollow structure, and the hollow structure is a triangular, quadrilateral, pentagonal or other special-shaped hollow structure; the top corners of the triangular, quadrilateral, pentagonal or other special-shaped hollow structures are all chamfered structures.

9. A method for manufacturing a micro-hotplate gas sensing array device as claimed in any one of claims 1 to 8, characterized in that: The steps include: S1: etching and depositing a temperature measuring electrode (202) on the front side of the ceramic substrate, and etching and depositing a heating electrode (201) on the back side of the ceramic substrate; S2: etching and depositing on the top or one side of the temperature measuring electrode (202) to prepare a temperature measuring resistance electrode (203); S3 etching a hollow structure around the temperature buffer structure according to the patterns of the heating electrode (201), the temperature measuring electrode (202) and the temperature measuring resistor electrode (203) to prepare a ceramic micro-hotplate gas sensing array unit; S4: arranging n ceramic micro-hotplate gas-sensing array units in an array to prepare a ceramic micro-hotplate gas-sensing array chip (2), wherein n is an integer not less than 1; S5: fixing one side of the raising ring (3) on the semiconductor tube shell (4), and then fixing the obtained ceramic micro-hotplate gas sensing array chip (2) on the other side of the raising ring (3); S6 connects the semi-ceramic micro-hotplate gas-sensing array chip (2) to a semiconductor tube shell (4) provided with a pad via a lead wire, and leads out a signal; S7 directly plugs the porous protective mesh cover (1) and the semiconductor tube shell (4) to obtain a micro-hot plate gas-sensing array device.

10. The manufacturing method according to claim 9, characterized in that: The S2 specifically comprises the following steps: preparing an insulating layer (204) above the temperature measuring electrode (202), etching teeth on the insulating layer (204) and the front surface of the ceramic substrate, and covering the surface of the teeth with a gas sensitive film to prepare a temperature measuring resistor electrode (203); The S2 specifically comprises the following steps: etching a tooth on one side of the temperature measuring electrode (202), and covering the surface of the tooth with a gas sensitive film to prepare a temperature measuring resistance electrode (203); The thickness of the ceramic substrate is 10μm-500μm; The thickness of the resistance measuring electrode (203) and the temperature measuring electrode (202) is 10nm-1000nm.

11. The manufacturing method according to claim 10, characterized in that: The thickness of the resistance measuring electrode (203) and the temperature measuring electrode (202) is 100 nm, and the line width of the resistance measuring electrode (203) and the temperature measuring electrode (202) is 1 μm-100 μm.

12. The manufacturing method according to claim 11, characterized in that: The resistance measuring electrode (203) and the temperature measuring electrode (202) are 30 μm.

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