A quasi-chip power amplifier

Abstract

The present invention relates to the field of electronic communications, and in particular to a cascaded quasi-chip power amplifier, which provides a quasi-chip power amplifier, including a combination module of an input matching circuit and a gate bias circuit, an amplifier tube core, and a combination module of an output matching circuit and a drain bias circuit, wherein the combination module of the input matching circuit and the gate bias circuit is connected to the gate of the amplifier tube core, and the drain of the amplifier tube core is connected to the combination module of the output matching circuit and the drain bias circuit; the amplifier tube core is used to amplify the input signal; the bias circuit is used to choke the radio frequency signal and provide a gate voltage for the amplifier tube core. On the one hand, the use of gallium arsenide materials saves costs and is conducive to the miniaturization of amplifiers. On the other hand, the use of gallium nitride materials to make active power amplifier tube cores meets the high frequency, high power and high thermal conductivity requirements of the power amplifier for the material.

Description

Technical Field

[0001] The present invention relates to the field of electronic communications, and in particular to a cascaded quasi-chip power amplifier. Background Art

[0002] As one of the most important components in various radio systems such as communications and radars, the performance of the power amplifier largely determines the performance of the entire system. With the development of active phased array technology and wireless communication technology, the system has an increasing demand for power amplifiers, and at the same time, the requirements for their size, cost, efficiency, and linearity are also getting higher and higher.

[0003] There are generally two ways to implement traditional power amplifiers. One is a hybrid integrated circuit based on integrated circuits and discrete components. The advantages are flexible design and low cost, but the disadvantages are large size and large debugging. The other is a microwave chip integrated circuit (MMIC), which integrates all components on a chip. The advantages are good consistency, good stability, and small size, but the disadvantages are high development cost and many specific process restrictions. MMIC has the advantages of good stability and small size, and is widely used in the design and use of power amplifiers. The main substrate materials for making MMIC are gallium arsenide (GaAs) and gallium nitride (GaN). Compared with GaAs materials, the main advantages of GaN power amplifier chips are reflected in active GaN power amplifier tubes: power amplifier tubes made of GaN have high saturated electron rate, high breakdown voltage, and high thermal conductivity, which are advantages that GaAs power amplifier tubes do not have. However, in the design and use of GaN power amplifier chips, passive devices, especially inductors, often occupy a large area, making the chip area larger. Due to the dielectric constant and other reasons of GaN materials, the area of ​​the matching circuit is larger than that of GaAs. In addition, the inherent cost of the material is higher than that of GaAs, which makes the cost of GaN chip amplifiers higher. In order to achieve the required high power, power amplifiers often require multi-stage power amplifier cascades, which involves the connection and matching between the front-stage power amplifier and the back-stage. The common method is to design the amplification and matching circuits of the front-stage power amplifiers and the back-stage power amplifiers respectively, and then cascade the output of the front-stage power amplifier with the input of the back-stage power amplifier. As a GaN quasi-chip power amplifier with high power output in the back stage, its input matching and bias circuits can still be made of GaAs materials and then connected to the front-stage amplifier. The front-stage power amplifier often does not need to output a large power, and GaAs materials can meet the requirements. The use of GaN to make the front-stage power amplifier cannot fully exert the advantages of GaN, and at the same time causes the cost to increase. Summary of the invention

[0004] The technical problem to be solved by the present invention is to overcome the problem that the power amplifier designed by the conventional hybrid integrated circuit is not conducive to miniaturization and the power amplifier is made entirely of GaN material with high cost.

[0005] The technical solution adopted by the present invention to solve its technical problems is: to provide a quasi-chip power amplifier, including a combination module of an input matching circuit and a gate bias circuit, an amplifier core, and a combination module of an output matching circuit and a drain bias circuit, wherein the combination module of the input matching circuit and the gate bias circuit is connected to the gate of the amplifier core, and the drain of the amplifier core is connected to the combination module of the output matching circuit and the drain bias circuit; the amplifier core is used to amplify the input signal; the input / output matching circuit is used to match the input / output impedance of the amplifier core with the ohmic impedance of the input / output port; and the gate / drain bias circuit is used to choke the radio frequency signal.

[0006] Furthermore, the input matching circuit includes a T-type matching structure, at least two microstrip matching structures and the same number of gold wires as the microstrip structures, and the T-type matching structure, at least two microstrip matching structures and the gold wires are connected in sequence.

[0007] Furthermore, the T-type matching structure is composed of microstrips TL1, TL2 and parallel capacitor C2.

[0008] Furthermore, the gate bias circuit is composed of a resistor and a microstrip in series and then a parallel capacitor, and the gate bias circuit is used to suppress the leakage of the RF input signal from the gate feed power supply terminal of the amplifier core and provide a gate voltage for the amplifier core; the drain bias circuit is composed of a microstrip parallel capacitor, which is used to suppress the leakage of the output signal to the drain feed power supply terminal and provide a drain voltage for the amplifier core.

[0009] Furthermore, the combined module of the input matching circuit and the gate bias circuit serves as the input part of the amplifier, which is connected to the gate of the amplifier die by a gold wire or a gold ribbon.

[0010] Furthermore, the combined module of the output matching circuit and the drain bias circuit serves as the output part of the amplifier, which is connected to the drain of the amplifier die by a gold wire or a gold ribbon.

[0011] Furthermore, it also includes a front-stage power amplifier, which is connected to the input end of the combination module of the input matching circuit and the gate bias circuit.

[0012] Furthermore, a driving-stage gallium arsenide power amplifier core is integrated on the pre-stage power amplifier, and the drain of the gallium arsenide power amplifier core is connected to a feeding circuit composed of a capacitor and a microstrip in parallel; the gate is connected to a combination module of a pre-stage input matching circuit and a bias circuit of the pre-stage power amplifier.

[0013] Furthermore, the amplifier die is an active gallium nitride chip.

[0014] Furthermore, the manufacturing materials of the input / output matching circuit and the gate / drain bias circuit include GeSi material, SiC material, diamond material and high-resistance silicon material.

[0015] The beneficial effects of the present invention are: on the one hand, the use of gallium arsenide materials to make passive circuits such as input and output matching, bias circuits and feedback circuits of the front-stage power amplifier can save costs while integrating the input matching circuit of the rear-stage quasi-chip power amplifier of the same material on the front-stage power amplifier chip, breaking through the original hybrid integrated circuit discrete component design method and facilitating the miniaturization of the amplifier. On the other hand, the use of gallium nitride materials to make active power amplifier tube cores has a large breakdown voltage, a high saturated electron rate, and a high thermal conductivity, meeting the high-frequency, high-power and high thermal conductivity requirements of the power amplifier for the material. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a two-way synthesis circuit diagram of a first embodiment of a quasi-chip power amplifier of the present invention;

[0017] Figure 2 It is a four-way synthesis circuit diagram of a first embodiment of a quasi-chip power amplifier of the present invention;

[0018] Figure 3 It is an eight-way synthesis circuit diagram of a first embodiment of a quasi-chip power amplifier of the present invention;

[0019] Figure 4 It is a two-way synthesis circuit diagram of a second embodiment of a quasi-chip power amplifier of the present invention;

[0020] Figure 5 It is a four-way synthesis circuit diagram of a second embodiment of a quasi-chip power amplifier of the present invention;

[0021] Figure 6 This is an eight-way synthesis circuit diagram of a second embodiment of a quasi-chip power amplifier of the present invention. DETAILED DESCRIPTION

[0022] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0023] Embodiment of the present invention Figure 1-3As shown, a quasi-chip power amplifier is provided, including a combination module of an input matching circuit and a gate bias circuit, an amplifier core, and a combination module of an output matching circuit and a drain bias circuit, wherein the combination module of the input matching circuit and the gate bias circuit serves as the input part of the amplifier, and is connected to the gate of the amplifier core by a gold wire or a gold ribbon; the combination module of the output matching circuit and the drain bias circuit serves as the output part of the amplifier, and is connected to the drain of the amplifier core by a gold wire or a gold ribbon; the amplifier core is used to amplify the input signal; the input / output matching circuit is used to match the input / output impedance of the amplifier core with the ohmic impedance of the input / output port; and the gate / drain bias circuit is used to choke the radio frequency signal.

[0024] More preferably, the input matching circuit includes a T-type matching structure, at least two microstrip matching structures and the same number of gold wires as the microstrip structures, wherein the T-type matching structure, at least two microstrip matching structures and the gold wires are connected in sequence. The T-type matching structure is composed of microstrips TL1 and TL2 in parallel with capacitor C2.

[0025] More preferably, the gate bias circuit is composed of a resistor and a microstrip in series and then a parallel capacitor, and the gate bias circuit is used to suppress the leakage of the RF input signal from the gate feed power supply terminal of the amplifier core and provide a gate voltage for the amplifier core; the drain bias circuit is composed of a microstrip parallel capacitor, which is used to suppress the leakage of the output signal to the drain feed power supply terminal and provide a drain voltage for the amplifier core.

[0026] The present invention also provides another embodiment Figure 4-6 As shown, the difference from the first embodiment is that the pre-stage circuit is no longer a single input matching bias circuit, but a pre-stage power amplifier formed by combining the input matching circuits of the gallium arsenide power amplifier and the gallium nitride power amplifier tube core, the pre-stage power amplifier is integrated with a driving-stage gallium arsenide power amplifier tube core, the drain of the gallium arsenide power amplifier tube core is connected to a feeding circuit composed of a capacitor and a microstrip in parallel; the gate is connected to a combination module of the pre-stage input matching circuit and the bias circuit of the pre-stage power amplifier. The amplifier is then connected to the pre-stage circuit and the gallium nitride power amplifier tube core through gold wire or gold ribbon interconnection.

[0027] More preferably, the amplifier die is an active GaN (gallium nitride) chip. The active power amplifier die is made of gallium nitride material to meet the high frequency, high power and high thermal conductivity requirements of the power amplifier; the passive circuits such as input and output matching, bias circuits and feedback circuits are made of gallium arsenide materials to reduce chip costs. Alternative methods include using GeSi materials (silicon-based heterostructure materials), SiC materials (silicon carbide materials), diamond materials and high-resistance silicon materials for the front and rear stage circuit chips.

[0028] The figure only shows a circuit with a single-stage amplifier at the driving stage, and a multi-stage amplifier form can also be used. Figure 1 As shown, the two-way synthesis quasi-power amplifier is mainly used to synthesize power by using two identical tube cores to solve the problem of insufficient power capacity of a single GaN power amplifier tube core. The RF input end is composed of an input matching network and a gate bias circuit, capacitor C1, microstrip lines TL1, TL2 and C2, microstrip lines TL3, TL4, TL5, TL6 and a gold wire (strip) impedance matching network, which realizes the conjugation of the gate impedance of the GaN amplifier tube core to the input impedance of 50 ohms (for example, the optimal impedance of the gate of the amplifier tube core is R1+j*X1, then the matching network realizes the impedance R1-j*X1 transformation to 50 ohms), and at the same time completes the input excitation signal power sharing, and is fed into the amplifier tube core gate input end by the two paths of input TL5, TL6 and TL3, TL4 respectively. The gate bias circuit is composed of a series resistor TL7, R1, a microstrip line TL7, and a parallel capacitor C4, which chokes the RF signal, suppresses the leakage of the RF input signal to the gate feed power supply end, and provides a gate voltage for the GaN amplifier tube core. The matching circuit and the gate bias circuit together constitute the input part of the amplifier, and are connected to the gate of the power amplifier chip by gold wire or gold tape (the influence of the gold wire or gold tape needs to be integrated into the matching network). The source of the GaN amplifier die is grounded, and the drain is connected to the combined module of the back-end output matching circuit and the drain bias circuit through a gold wire or gold tape. The circuit structure of the rear stage is similar to that of the front stage. The microstrip lines TL8, TL9, TL10, TL11, TL12, and C5 form a matching network to achieve the function of transforming the optimal conjugate impedance of the GaN amplifier die drain to the 50 ohm impedance of the output port (for example, if the optimal impedance of the gate of the amplifier die is R2+j*X2, the matching network realizes the impedance R2-j*X2 transformation to 50 ohms), and completes the power synthesis of the two output signals at the same time (by TL8, TL9 and TL10, TL10 two outputs). Microstrip lines TL12 and C5 constitute the GaN amplifier die drain bias circuit, which suppresses the leakage of the output signal to the drain feed power supply terminal, and provides drain voltage and current for the amplifier die.

[0029] The design principle diagram of the four-way synthesis quasi-power amplifier of the first embodiment is as follows: Figure 2 The four-way synthesized quasi-power amplifier is mainly used to combine the power of two GaN power amplifier dies, which is still insufficient, and four identical dies are used for power synthesis. Figure 2 The cascaded form of the four tube cores is not fully drawn, such as Figure 1The RF input is a cascade structure, and the RF input is composed of an input matching network and a gate bias network. The RF input DC blocking capacitor C1 is connected to a T-type matching structure composed of TL1, TL2 and C2, and then two T-type power splitter structures composed of TL3, TL4, C4 and TL18, TL19 and C8 are connected in parallel to achieve impedance transformation. After TL3, TL4, C4, two groups of series microstrip lines TL6, TL7 and TL8, TL9 are connected in parallel to form a two-way power divider structure. At the same time, two groups of series microstrip lines TL21, TL22 and TL23, TL24 are connected in parallel to TL18, TL19 and C8 to form another two-way power divider. The four power dividers are connected to the gate of the GaN power amplifier die by gold wire or gold ribbon. The main functions of the input bias network include impedance transformation and power distribution of the input excitation signal. The gate bias circuit is composed of TL5 and R1 in series and C6 in parallel (the other is composed of TL20 and R2 in series and C9 in parallel), which chokes the RF signal and provides the gate voltage for the GaN amplifier core. The source of the GaN power amplifier core is directly grounded, and the drain is connected to four groups of series microstrip line networks TL10, TL11, TL12, TL13, TL25, TL26, TL27, and TL28 in parallel by gold wire or gold belt. TL10, TL11, TL12, and TL13 are connected in series with TL14 to form power synthesis and complete the function of 50 ohm impedance transformation. TL25, TL26, TL27, and TL28 are connected in series with TL29 to form another power synthesis. After the synthesis of TL14 and TL19, the matching network structure composed of TL16, TL17, and C12 is connected to realize power synthesis and impedance matching, and finally output through the DC blocking capacitor C13. The GaN power amplifier die drain bias circuit is composed of TL15 and C10, and the other circuit is composed of TL30 and C11, which has the effect of choke feeding.

[0030] The schematic diagram of the eight-way synthesis quasi-power amplifier of the first embodiment is as follows: Figure 3 The eight-way synthesized quasi-power amplifier is mainly used because the power synthesis capability of four GaN power amplifier tube cores is still insufficient, and eight identical tube cores are used for power synthesis. Figure 3 The cascade of eight tubes is not fully drawn. Figure 1The form of cascade structure, the same applies to the following figure. The T-type matching structure composed of TL1, TL2 and C2 is connected after the DC blocking capacitor C1 at the RF input end, and then two T-type power division structures composed of TL3, TL4, C4 and TL19, TL20 and C15 are connected in parallel, and 50 ohm impedance transformation is achieved at the same time. After TL3, TL4, C4, two T-type structures composed of TL6, TL7, C7 and TL8, TL9 and C9 are connected in parallel. TL6, TL7, C7 are then connected in parallel with two TL11, TL12 and TL13, TL14 power division structures to complete impedance matching and power distribution. After the T-type structure composed of TL8, TL9 and C9, two TL15, TL16 and TL17, TL18 power division structures are connected in parallel. After TL19, TL20, C15, two T-type structures composed of TL22, TL23, C13 and TL24, TL25 and C17 are connected in parallel. After TL22, TL23, and C13, two TL27, TL28 and TL29, TL30 power division structures are connected in parallel to complete impedance matching and power distribution. After the T-type structure composed of TL24, TL25, and C17, two TL31, TL32 and TL33, TL34 power division structures are connected in parallel. The four identical structures of the gate bias circuit are composed of TL5 and R1 in series, C5 in parallel; TL10 and R2 in series, C11 in parallel; TL21 and R3 in series, C12 in parallel and TL26 and R4 in series, C19 in parallel, which choke the RF signal and provide gate voltage for the GaN amplifier die. The eight-way power division structure is connected to the gate of the GaN power amplifier die by gold wire or gold ribbon. The source of the GaN power amplifier die is directly grounded. The drain is connected to eight groups of microstrip line networks, TL36, TL37, TL38, TL39, TL40, TL41, TL42, TL43, TL44, TL45, TL46, TL47, TL48, TL49, TL50, and TL51, by gold wires or gold ribbons to form the output of the GaN power amplifier die. TL52 is connected in series after TL36, TL37, TL38, and TL39, and TL53 is connected in series after TL40, TL41, TL42, and TL43 to achieve power synthesis and impedance transformation. TL52 and TL53, together with the T-type network composed of TL59, TL60, and C21, form a power synthesis structure and complete impedance transformation at the same time. TL56 is connected in series after TL44, TL45, TL46, and TL47, and TL57 is connected in series after TL48, TL49, TL50, and TL51 to achieve power synthesis and impedance transformation. TL56 and TL57 together with the T-type network composed of TL61, TL62 and C24 form a power synthesis structure and complete impedance transformation at the same time.The T-type network composed of TL59, TL60 and C21 and the T-type network composed of TL61, TL62 and C24 are connected to the T-type network composed of TL63, TL64 and C26 to achieve impedance transformation and final power synthesis, and then output through the DC blocking capacitor C27. The GaN power amplifier die drain bias circuit is composed of TL35 and C20 (the other three circuits are composed of TL54 and C22, TL55 and C23, TL58 and C25 respectively), which plays the role of choke feeding.

[0031] The two-way synthesis of Example 2 is as follows Figure 4 As shown, the front-stage chip consists of a front-stage GaAs power amplifier and a GaN tube core input matching and bias circuit. The front-stage GaAs power amplifier consists of input matching (TL1, TL2 and C2), output matching (TL3, TL4, C5 and C4), and the front-stage output matching can also be the input matching, bias circuit (TL5 and R1 in series, C3 in parallel) and feeding circuit (TL6 in series and C6 in parallel) of the rear stage; the GaN tube core input matching structure consists of two TL7 series TL8 and TL9 series TL10, which play the role of power distribution and impedance transformation; the GaN tube core bias circuit consists of TL11 in series and C8 in parallel, and is connected to the gate of the GaN tube core through a gold wire or a gold belt to provide a bias voltage for the tube core. The source of the GaN core is directly grounded, and the drain is connected in parallel to the two output structures composed of TL12, TL13 and TL14, TL15 through gold wire or gold tape, and then TL17, TL18 and parallel C9 are connected in series to complete the output impedance matching and power synthesis, and finally output through the DC blocking capacitor C10.

[0032] The four-way synthesis of Example 2 is as follows Figure 5As shown, the front-stage chip consists of two parts: the front-stage GaAs power amplifier and the GaN tube core input matching and gate bias circuit. The front-stage GaAs power amplifier consists of input matching (TL1, TL2 and C2), output matching (TL3, TL4, C5 and C4), bias circuit (TL5 and R1 in series, C3 in parallel) and feeding circuit (TL6 in series and C6 in parallel); the GaN amplifier tube core input matching consists of two T-type power splitter structures consisting of parallel TL7, TL8, C7 and TL14, TL15 and C8 to achieve 50 ohm impedance transformation, and TL7, TL8, C7 are connected in parallel to TL10, TL11 and TL12, TL13 two groups of series microstrip lines to form a two-way power divider structure, while TL17, TL18 and TL19, TL20 two groups of series microstrip lines are connected in parallel to TL14, TL15 and C8 to form another two-way power divider. The four power dividers are connected to the gate of the GaN power amplifier die by gold wire or gold ribbon. The bias circuit is composed of TL9 and R3 in series and C16 in parallel (the other is composed of TL16 and R2 in series and C9 in parallel), which chokes the RF signal and provides gate voltage for the GaN amplifier die. The source of the GaN power amplifier die is directly grounded, and the drain is connected to four groups of series microstrip line networks of TL22, TL23, TL24, TL25, TL26, TL27 and TL28, TL29 in parallel by gold wire or gold ribbon. TL26, TL27, TL28, TL29 are connected in series with TL31 to form power synthesis, and the function of 50 ohm impedance transformation is completed at the same time. TL25, TL26, TL27, TL28, TL32 are connected in series to form another power synthesis. After the synthesis of TL31 and TL32, the matching network structure composed of TL33, TL34 and C14 is connected to realize power synthesis and impedance matching, and finally output through the DC blocking capacitor C15. The GaN power amplifier die drain feed network is composed of TL21 and C12 (the other route is composed of TL30 and C13), which has the effect of choke feeding.

[0033] The eight-way synthesis of Example 2 is as follows Figure 6As shown, the front-stage chip consists of two parts: the front-stage GaAs power amplifier and the GaN tube core input matching and bias circuit. The front-stage GaAs power amplifier consists of input matching (TL1, TL2 and C2), output matching (TL3, TL4, C5 and C4), bias circuit (TL5 and R1 in series, C3 in parallel) and feeding circuit (TL6 in series and C6 in parallel); the GaN amplifier tube core input matching consists of a T-type power division structure consisting of two parallel TL7, TL8, C7 and TL23, TL24 and C14, and realizes 50 ohm impedance transformation at the same time. After TL7, TL8, C7, two parallel T-type structures consisting of TL9, TL10, C9 and TL11, TL12 and C10 are connected. TL11, TL12 and C10 are connected in parallel with two TL19, TL20 and TL21, TL22 power division structures to complete impedance matching and power distribution. After the T-type structure composed of TL9, TL10, and C9, two TL15, TL16 and TL17, TL18 series power division structures are connected in parallel. After TL23, TL24, and C14, two T-type structures composed of TL25, TL26, C13 and TL27, TL28, and C16 are connected in parallel. After TL25, TL26, and C13, two TL31, TL32 and TL33, TL34 series power division structures are connected in parallel to complete impedance matching and power distribution. After the T-type structure composed of TL27, TL28, and C16, two TL35, TL36 and TL37, TL38 series power division structures are connected in parallel. The eight power division structures are connected to the gate of the GaN power amplifier die by gold wires or gold ribbons. The bias circuit is composed of four groups of identical structures, which are respectively composed of TL13 and R2 in series, C8 in parallel; TL14 and R3 in series, C11 in parallel; TL29 and R4 in series, C12 in parallel and TL30 and R5 in series, C17 in parallel, which choke the RF signal and provide gate voltage for the GaN amplifier die. The source of the GaN power amplifier die is directly grounded. The drain is connected to eight groups of series microstrip line networks TL40, TL41, TL42, TL43, TL44, TL45, TL46, TL47, TL48, TL49, TL50, TL51, TL52, TL53, TL54, TL55 in parallel by gold wire or gold belt, forming the output of the GaN power amplifier die. TL57 is connected in series after TL40, TL41, TL42, TL43, and TL58 is connected in series after TL45, TL44, TL46, TL47 to achieve power synthesis and impedance transformation. TL57 and TL58 form a T-type network with TL65, TL66 and C24 to form a power synthesis structure and complete impedance transformation. TL48, TL49, TL50, TL51 are connected in series with TL60, and TL52, TL53, TL54, TL55 are connected in series with TL61 to achieve power synthesis and impedance transformation.TL60 and TL61 form a power synthesis structure together with the T-type network composed of TL63, TL64 and C23, and complete the impedance transformation at the same time. The T-type network composed of TL65, TL66 and C24 and the T-type network composed of TL63, TL64 and C23 are connected to the T-type network composed of TL67, TL68 and C25 to achieve impedance transformation and final power synthesis, and then output through the DC blocking capacitor C27. The GaN power amplifier core drain feeding network is composed of TL39 and C19 (the other three are composed of TL59 and C20, TL69 and C21, TL62 and C22 respectively), which plays the role of choke feeding.

[0034] Although the present invention is disclosed in preferred embodiments, such as the above-mentioned two-way, four-way, and eight-way synthesized quasi-power amplifier, it is not intended to limit the scope of the present invention, and it can also be implemented by other numbers of ways. A person skilled in the art of the present invention can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the definition of the previous claims.

Claims

1. A quasi-chip power amplifier, characterized in that: The invention comprises a combination module of an input matching circuit and a gate bias circuit, an amplifier tube core, and a combination module of an output matching circuit and a drain bias circuit, wherein the combination module of the input matching circuit and the gate bias circuit is connected to the gate of the amplifier tube core, and the drain of the amplifier tube core is connected to the combination module of the output matching circuit and the drain bias circuit; the amplifier tube core is used to amplify an input signal; The input / output matching circuit is used to match the input / output impedance of the amplifier tube core with the ohmic impedance of the input / output port; the gate / drain bias circuit is used to choke the radio frequency signal; and also includes a pre-stage power amplifier, the pre-stage power amplifier is connected to the input end of the combined module of the input matching circuit and the gate bias circuit, the pre-stage power amplifier is integrated with a driving-level gallium arsenide power amplifier tube core, and the drain of the gallium arsenide power amplifier tube core is connected to a feeding circuit composed of a capacitor and a microstrip in parallel; The grid is connected to a combination module of a front-stage input matching circuit and a bias circuit of a front-stage power amplifier.

2. The quasi-chip power amplifier according to claim 1, characterized in that: The input matching circuit comprises a T-type matching structure, at least two microstrip matching structures and the same number of gold wires as the microstrip structures. The T-type matching structure, at least two microstrip matching structures and the gold wires are connected in sequence.

3. The quasi-chip power amplifier according to claim 2, characterized in that: The T-type matching structure is composed of microstrips TL1 and TL2 and a parallel capacitor C2.

4. The quasi-chip power amplifier according to claim 1, characterized in that: The gate bias circuit is composed of a resistor and a microstrip in series and then a parallel capacitor. The gate bias circuit is used to suppress the leakage of the RF input signal from the gate feed power supply terminal of the amplifier tube core and provide a gate voltage for the amplifier tube core; the drain bias circuit is composed of a microstrip parallel capacitor, which is used to suppress the leakage of the output signal to the drain feed power supply terminal and provide a drain voltage for the amplifier tube core.

5. The quasi-chip power amplifier according to claim 1, characterized in that: The combined module of the input matching circuit and the gate bias circuit serves as the input part of the amplifier, and is connected to the gate of the amplifier die by a gold wire or a gold ribbon.

6. The quasi-chip power amplifier according to claim 1, characterized in that: The combined module of the output matching circuit and the drain bias circuit serves as the output part of the amplifier, which is connected to the drain of the amplifier die by a gold wire or a gold ribbon.

7. The quasi-chip power amplifier according to any one of claims 1 to 6, characterized in that: The amplifier die is an active gallium nitride chip.

8. The quasi-chip power amplifier according to any one of claims 1 to 6, characterized in that: The manufacturing materials of the input / output matching circuit and the gate / drain bias circuit include GeSi material, SiC material, diamond material and high-resistance silicon material.

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