Chip stacking device and manufacturing method thereof

Abstract

The present disclosure relates to a device (100). The device comprises: a base substrate (110) having a sensor component (120) arranged on the base substrate; a spacer layer (130) on the base substrate (110), wherein the spacer layer is structured to provide a cavity region (140), in which the sensor component (120) is exposedly arranged on the base substrate (110); and a DAF tape element (DAF=chip attach film) (150) on a stacking element, wherein the DAF tape element (150) is configured to mechanically firmly connect the stacking element to the spacer layer (130) arranged on the base substrate (110) and obtain the cavity region.

Description

Technical Field

[0001] Embodiments relate to a device, such as a chip stack device, having a sensor component or a MEMS component arranged in a cavity region, and to a method for producing the device. Embodiments relate in particular to a device, such as a chip stack device, in which the stacking element is arranged on a base substrate by means of a DAF tape element (DAF=chip attach film), wherein the cavity region is held in a secure manner between the stacking element and the base substrate, wherein the sensor component is arranged exposed in the cavity region at the base substrate. Background Art

[0002] Chip stacking is a versatile packaging technology that can reduce the final housing size on the one hand and increase device functionality on the other hand. For situations where a MEMS component should be accommodated in a housing, currently available stacking processes are not directly applicable. In this case, it is usually necessary that the MEMS component is the topmost component of the chip stack. However, this is only possible if the MEMS component or the MEMS chip is the smallest chip in the stacked device.

[0003] These standard packaging solutions consist, for example, in applying a closed cover element to a base substrate at wafer level over the MEMS structure to be protected, so that in the subsequent stacking step, i.e. when arranging further stacked elements, the MEMS structure can be protected against so-called "adhesive oozing" or even mechanical damage. "Adhesive oozing" means that during the fixing of two elements by means of an adhesive, a portion of the applied adhesive is squeezed out of the mechanical contact area between the two elements to be connected due to the action of mechanical pressure and heat during the curing of the adhesive, and accumulates near the mechanical connection area of ​​the two elements.

[0004] The disadvantages of conventional methods are that specific front-end technologies such as wafer bonding or thin film lamination are required. In addition, a relatively large stack height is also produced due to the need for a cover. In addition, the previously used front-end technologies are relatively complex and expensive. Summary of the invention

[0005] There is therefore a need for new designs of chip stacks or chip stack arrangements and methods for producing corresponding chip stacks.

[0006] In particular, there is a need to provide a chip stack and a method for manufacturing a chip stack, wherein the chip stacking process can be performed even if the MEMS chip is not the smallest chip used in the stacking process.

[0007] An embodiment provides a device comprising: a base substrate having a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured to provide a cavity area in which the sensor component is exposedly arranged at the base substrate; and a DAF tape element (DAF = chip attach film) at a stacking element, wherein the DAF tape element is constructed to mechanically firmly fix the stacking element to the spacer layer arranged at the base substrate and obtain the cavity area.

[0008] According to one embodiment, the spacer layer optionally has a bleed-stopper structure adjacent to the cavity region, wherein the bleed-stopper structure is designed to suppress capillary creep or flow of the DAF material of the DAF belt element in the partially liquefied state.

[0009] According to one embodiment, the barrier structure is configured to exert a capillary action on the DAF material of the DAF tape element in a partially liquefied state.

[0010] According to one embodiment, the barrier structure arranged in the spacer layer is configured to guide the partially liquefied DAF material into the recess in a targeted manner based on the capillary action of the DAF material of the DAF tape element and to accommodate the DAF material at the recess.

[0011] An embodiment also provides a method for manufacturing a stacked device, comprising the following steps: providing a base substrate on which a sensor component is arranged; applying a spacer layer on the base substrate; structuring the spacer layer to expose the sensor component and a corresponding cavity area; providing a stacking element on which a DAF tape element is arranged, and arranging the stacking element with the DAF tape element on the spacer layer; and hardening the DAF tape element by applying heat and / or mechanical pressure to solidify the DAF material of the DAF tape element.

[0012] According to one embodiment, in the step of structuring the spacer layer, an impermeable structure may be optionally formed in the spacer layer adjacent to the cavity region, wherein the impermeable structure has a recess. According to one embodiment, the impermeable structure arranged in the spacer layer is configured to guide partially liquefied DAF material into the recess in a targeted manner based on the capillary action of the DAF material of the DAF tape element and to accommodate the DAF material in the recess. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The preferred embodiments of the present disclosure will be explained in detail below with reference to the accompanying drawings.

[0014] Figure 1A shows a schematic cross-sectional view of an apparatus or stack according to one embodiment;

[0015] Figure 1B According to one embodiment, a schematic top view of a device or a stack of devices in the plane of a spacing layer of the stack of devices is shown;

[0016] Figure 2A-2D A schematic top view showing various different designs of an anti-seepage structure of a spacer layer adjacent to a cavity is shown according to one embodiment;

[0017] Figure 3 shows a schematic cross-sectional view of a device or stack according to another embodiment; and

[0018] Figure 4 An exemplary flow chart showing method steps of a method for producing a device or stacking devices according to one embodiment is shown. DETAILED DESCRIPTION

[0019] Before explaining the embodiments of the present invention in more detail below with reference to the accompanying drawings, it should be noted that the same elements, objects, functional modules and / or method steps with the same functions or equivalent effects in different drawings have the same reference numerals, so that the illustrated descriptions of these elements, objects, functional modules and / or method steps (with the same reference numerals) in different embodiments can be interchanged or applied to each other. In the drawings, for the sake of clarity, the sizes of structures, elements, layers and / or regions may not be shown to scale.

[0020] Hereinafter, reference will now be made according to an embodiment Figure 1A-1B The basic design of a device 100 or a stacked device, for example in the form of a chip stack, is explained with reference to schematic sectional views and schematic top views.

[0021] like Figure 1A As shown in the schematic cross-sectional view of the device 100 shown in , the device 100 has a base substrate 110. The base substrate 110 may, for example, have a conductive material, an insulating material and / or a semiconductor material or a combination thereof. Therefore, the base substrate 110 may, for example, be configured as a chip element (semiconductor element), a semiconductor wafer (e.g., a silicon wafer), or may also be configured as a (printed) circuit board. A sensor component 120 is arranged at the main surface area 110-A of the base substrate 110. The sensor component 120 may, for example, have a MEMS component, a SAW filter element, or another sensor component that is at least partially accessible or exposed to the ambient atmosphere.

[0022] In the context of the present description, reference will be made, for example, to so-called "MEMS components" (MEMS = micro-electromechanical systems). MEMS components include, for example, sound transducers (e.g. capacitive or piezoelectric microphones or loudspeakers), accelerometers, gyroscopes, pressure sensors for measuring relative or absolute pressures, ultrasonic transducers, etc., wherein consideration is given, for example, to one or more movable components (e.g. diaphragms) mechanically coupled to a base substrate, which have electrodes for reading or for driving, wherein the electrodes are mounted on the diaphragm and / or the substrate. In the case of electrostatic MEMS pressure sensors or MEMS sound transducers, reading is usually achieved by measuring the capacitance between the electrodes. In the case of the transducer used as an operating device (actuator), for example a loudspeaker, the device is driven by applying a potential difference to the electrodes. However, the above enumeration should not be regarded as exhaustive, wherein the present concept applies to all micro-electromechanical systems.

[0023] Furthermore, a contact pad 112 may be provided at the base substrate 110, for example on the first main surface area 110-A of the base substrate 110. The contact pad 112 may be connected to the base substrate 110 by an electrical conductor path (at Figure 1A ) is provided for electrical contact and connection with the sensor assembly 120.

[0024] Furthermore, the device 100 has a spacer layer 130 located on the base substrate 110, wherein the spacer layer 130 is structured to provide a cavity region 140, wherein the sensor component 120 is arranged exposed or open to the ambient atmosphere on the base substrate 120 in the cavity region 140. For example, a pressure port (at Figure 1A The spacer layer 130 is arranged on the base substrate 120 in a mechanically fixed manner, for example.

[0025] Furthermore, the device 100 has a DAF tape element (DAF=chip attach film) 150 at the stacking element 160, that is, between the stacking element 160 and the spacer layer 130. The DAF tape element 150 is now designed to mechanically firmly connect the stacking element 160 to the spacer layer 130 arranged at the base substrate 110 and to obtain a cavity region 140 with the sensor component 120 arranged exposed at the base substrate 110. Thus, the cavity region 140 is formed, for example, between the base substrate 110 and the DAF tape element 150 arranged at the stacking element 160.

[0026] A contact pad 162 may be optionally provided at the stack element 160 so as to provide a conductive connection, for example, via a conductor path (in Figure 1AThe stacked element 160 is electrically contacted with the semiconductor circuit elements arranged in the stacked element 160 (not shown). For example, the stacked element 160 can be configured as a so-called ASIC chip (ASIC=Application Specific Integrated Circuit), for example, for microphone applications. In addition, for example, the stacked element 160 can be configured as a metal sheet or glass sheet, for example, as a cavity covering element, only for providing a covering function.

[0027] So, in summary, about Figure 1A The device 100 shown in FIG. 1 can be determined that the device 100 in the form of a stacked device or chip stack has one or more sensor components 120, such as MEMS elements, on a base substrate 110, wherein the base substrate 110 can be designed, for example, as a semiconductor chip or semiconductor wafer. The isolation layer 130, which is mechanically fixedly connected to the base substrate 110, is now structured so as to form a cavity region 140, in which the sensor component 120 is exposed. The DAF tape element 150 is now arranged at the stacking element 160 (for example, an ASIC chip) so that the stacking element 160 is mechanically firmly connected to the spacing layer 130 by means of the DAF tape element 150, which is completely hardened, wherein a cavity or cavity region 140 remains around the sensor component 120.

[0028] For example, due to the gap formed between the first major surface area 110-A of the base substrate 110 and the DAF tape element 150 by the cavity area 140, the sensor assembly 120 can be considered to be exposed upwardly (i.e., vertically toward the stacking element 160) and laterally (i.e., laterally toward the spacer layer 130).

[0029] According to one embodiment, the spacer layer 130 adjacent or adjacent to the cavity area 140 optionally has a so-called "impermeable structure" 132 (also called an anti-leakage structure or an anti-adhesive leakage structure) for the material of the DAF tape element 150 or the hardenable adhesive material. Figure 1A The optional impermeable structure 132 shown in hatching in FIG. 1 has, for example, a recess in the spacer layer 130 (in Figure 1A 130 ), wherein the recesses of the barrier structure 132 are designed to inhibit capillary creep or flow of the material of the DAF tape element 150, for example in a partially liquefied state, i.e. the barrier structure 132 is designed to “inhibit flow” for the material of the DAF tape element 150. Thus, the spacer layer 130 has, for example, a solid spacer layer region 131 and a barrier structure 132 adjoining thereto.

[0030] The material of the DAF tape element 150 is, for example, in a partially liquefied or viscous state before it is completely hardened. Therefore, for example, during the fixing of the stacking element 160 at the spacer layer 130, or during the curing process of the DAF tape element 150, the material of the DAF tape element 150 may be laterally squeezed out from the mechanical contact area 152 between the spacer layer 130 and the stacking element 160 by applying mechanical pressure and / or increasing the temperature to the DAF tape element 150 and exhibit capillary creep or flow in the direction of the sensor component 120 in the cavity 140. For the specific structural design of the anti-seepage structure 132, please refer to Figure 2A-2D An exemplary embodiment of .

[0031] In addition, the following will refer to an embodiment Figure 1B The device or stacked device 100 shown in FIG. 1 is a schematic top view in a plane AA of the spacer layer 130 , which plane AA is parallel to the main surface area 110 -A of the base substrate 110 .

[0032] like Figure 1B As shown, the spacer layer 130 is structured on the base substrate 110 to provide a cavity region 140, wherein the sensor component 120 is exposed and arranged at the base substrate 110. In addition, the spacer layer 130 adjacent to the cavity region 140 may optionally include a recess (in Figure 1B In addition, as shown in Figure 1B As shown in the schematic top view in , the spacer layer has, for example, an optional pressure port 134 to optionally provide fluid communication between the cavity region 140 and the ambient atmosphere surrounding the device 100. Thus, pressure changes or acoustic pressure changes ΔP in the ambient atmosphere can also be provided to the cavity region 140 and the sensor assembly 120.

[0033] However, according to one embodiment, the cavity region 140 may also be provided with the DAF tape element 150 through the base substrate 110 and / or the stacking element 160. Figure 1B The access opening shown in Figure 1A-1B In this regard, reference may be made, for example, to Figure 3 An embodiment of the device 100.

[0034] In the following, different designs of the impermeable structure 132 in the spacer layer 130 will now be discussed by way of example in a top view. Figure 2A-2D The following is a schematic diagram shown in Figure 2A-2D The embodiments of the impermeable structure 132 shown in the figure have in common that recesses 136 are arranged in the impermeable structure 132 adjacent to the cavity area 140 and also adjacent to each other around the cavity area 140, and the recesses extend, for example, parallel to the main surface area 110-A of the base substrate 110 between the DAF tape element 150 and the base substrate 110.

[0035] like Figure 2A-2D As further shown in the figure, a through hole 134 is optionally provided to provide fluid communication between the cavity area 140 and the ambient atmosphere around the device 100. It should also be noted that the impermeable structure 132 can also have a combination of the designs of the recess 136 shown below, that is, different local designs of the recess 136 can be provided at the impermeable structure 132. Thus, for example, different side areas or different sections of the side areas of the impermeable structure 132 can have different designs of the recess 136.

[0036] For example, during the fixing process and / or hardening process of the DAF tape element 150, the recess 136 of the barrier structure 132 formed in the spacer layer 130 provides a defined receiving volume V for the partially liquefied or viscous material of the DAF tape element 150 to be received. 136 , for the flow process of a portion of the partially liquefied material of the DAF belt element 150 caused by mechanical pressure and / or high temperature. Thus, each recess 136 of the impermeable structure 132 provides a defined partial volume ΔV 136 , wherein when the total number of recesses 136 is N, a defined accommodation volume V is obtained. 136 =N·ΔV 136 .

[0037] With knowledge of the material properties of the DAF band element 130 , the applied mechanical pressure and the temperature acting, the required defined containment volume ΔV can be determined relatively accurately. 136 , thereby effectively inhibiting or preventing the capillary creeping or outflow of the partially liquefied material from the impermeable structure 136 into the cavity area 140 during the fixing process or hardening process of the DAF tape element 150. Thus, the substantially uncontrolled flow or creeping of the partially liquefied material of the DAF tape element 150 can be effectively prevented by the impermeable structure 136. Through the special design of the impermeable structure 136, the capillary force acting on the partially liquefied material of the DAF tape element 150 can be adjusted, that is, the energetically preferred capillary force orientation can be obtained to reliably guide the partially liquefied material of the DAF tape element 150 to the partial volume ΔV provided by the recess 136. 136 and prevents further diffusion in the direction of the cavity region 140.

[0038] In addition, regarding Figure 2A-2D It should be noted from the schematic diagram of the recess 136 shown in FIG that the side surface of the recess 136 may be configured not only as a straight line but also at least partially as a curved surface, for example, convex or concave, or as a polygon.

[0039] As exemplified in Figure 2AAs shown in the schematic top view of , according to one embodiment, at least a portion of the recess 136 of the barrier structure 132 has a rectangular shape in the vicinity of the cavity area 140 .

[0040] As exemplified in Figure 2B According to another embodiment, at least a portion of the concave portion 136 of the impermeable structure 132 is configured as a sawtooth shape near the cavity area 140. Therefore, at least a portion of the concave portion 136 of the impermeable structure can be configured to widen from the solid portion of the spacer layer 130 toward the cavity area 140.

[0041] As exemplified in Figure 2C As shown in the schematic diagram, it is used to provide a limited accommodation volume V 136 At least a portion of the recess 136 may be configured to be narrowed from the solid region of the spacer layer 130 toward the cavity region 140 .

[0042] As exemplified in Figure 2D As shown in the schematic diagram of , the impermeable structure 132 includes a columnar structure having a plurality of pillars 138, which are, for example, configured to be spaced apart and perpendicular to the main surface area 110-A of the base substrate 110 and have recesses 136 configured between adjacent pillars 138. The spacing and diameter of the pillars, for example, can be varied between the inner and outer rows of pillars relative to the cavity area 140 to adjust the capillary effect acting on the partially liquefied material of the DAF tape element 150 during the period when the material is in a partially liquefied state, so that the partially liquefied material of the DAF tape element 150 spreads in the recesses 136 defined by the pillars.

[0043] According to one embodiment, for providing a defined accommodation volume V 136 At least a portion of the recess 136 may be configured in a groove shape or have a groove structure starting from the solid region of the spacer layer 130 toward the cavity region 140 .

[0044] About Reference Figure 2A-2D It should be noted that the above-mentioned embodiments of the anti-seepage structure 132 should be regarded as merely exemplary and not exhaustive, wherein the present solution can be applied to other configurations of the anti-seepage structure 132, as long as the anti-seepage structure 132, for example, provides a defined accommodation volume V136 for the material of the DAF tape element 150 in its partially liquefied or viscous state during a fixing process and / or a hardening process of the material of the DAF tape element 150, and further provides targeted guidance of the partially liquefied material of the DAF tape element 150 by targeted orientation of the capillary forces acting on the partially liquefied or viscous material of the DAF tape element 150.

[0045] According to one embodiment, the cavity area 140 parallel to the main surface area 110-A of the base substrate 110 may be at least partially constructed as a rectangle, wherein the size of the recess 136 formed in the impermeable structure 132 of the spacer layer 130 and adjacent to the corner area of ​​the rectangular cavity area 140 is at least 1.5 times or 2 times the size of the remaining recesses 136 adjacent to the side areas (i.e., longitudinal sides and lateral sides) of the rectangular cavity area 140.

[0046] According to one embodiment, the recesses 136 formed in the barrier structure 132 of the spacer layer 130 are arranged symmetrically around the cavity region 140 having the MEMS element 120 located therein.

[0047] According to one embodiment, the spacer layer may have a thickness in the range of 5 μm to 50 μm or in the range of 10 μm to 20 μm, for example. According to one embodiment, the DAF tape element 150 may have a thickness d in the range of 5 μm to 50 μm or in the range of 12 μm to 20 μm, for example in the substantially undeformed state of the layer 150. 130 The DAF tape element can, for example, comprise a so-called “dual-stage material” (also called b-stage material), for example a partially crosslinked epoxy layer (=layer made of partially crosslinked epoxy), and can be structured like a film.

[0048] Considered as the intermediate-stage hardened b-stage material layer 150 is, for example, a layered b-stage epoxy material that hardens to an intermediate stage (partially polymerized or partially cross-linked) and is further plastically deformable or bendable but shape-stable enough to form the cavity 140 above the sensor assembly 120 .

[0049] The b-stage material can, for example, have an intermediate hardening stage (soft bake=partial crosslinking or partial polymerization) and a complete hardening stage (hard bake=complete crosslinking or complete polymerization), which can be achieved in a targeted manner by a corresponding hardening process.

[0050] The spacer layer 130 may include, for example, a plastic material made of an imide group (eg, polyimide). In addition, the material of the spacer layer 130 includes a material containing epoxy resin, such as SU8 material (photoresist).

[0051] Thus, according to an embodiment, the spacer layer 130 has, adjacent to the mass region 140, an impermeable structure or leakproof structure 132 for the adhesive material of the DAF tape element 150, which has a recess 136, wherein the impermeable structure 132 or the correspondingly configured recess 136 is configured to inhibit capillary creep or flow of the material of the DAF tape element 150, for example in a partially liquefied state, during the fixing process and / or curing process, for example under the effect of mechanical pressure and high temperature. Thus, the impermeable structure 132 realizes the flow-inhibiting properties of the partially liquefied material of the DAF tape element.

[0052] According to one embodiment, the barrier structure 132 or the corresponding recess 136 is designed to exert a greater capillary action on the material of the DAF tape element 150 in a partially liquefied state than in the mass region 140. Thus, the barrier structure 132 arranged in the spacer layer 130 is designed to guide the material of the DAF tape element 150 in a targeted manner into the recess 136 based on the capillary action on the material of the DAF tape element 150 when the material is in a partially liquefied state and to accommodate the material in the recess.

[0053] According to one embodiment, the barrier structure 132 is configured to contain the partially liquefied material of the DAF tape element 150 during the solidification process and inhibit the capillary creep or flow process of the partially liquefied material of the DAF tape element 150 .

[0054] Therefore, according to one embodiment, the impermeable structure is constructed in the spacer layer laterally, i.e. parallel to the main surface area 110-A of the base substrate 110, between the cavity area 140 and the solid material area (also called residual area) of the spacer layer 130, wherein the spacer layer 130 extends, for example, parallel to the main surface area 110-A of the base substrate 110 and / or the main surface area 160-A of the stacking element 160.

[0055] According to one embodiment, the recess 136 formed in the spacer layer 130 by the impermeable structure 132 provides a defined or predetermined receiving volume D for the partially liquefied material of the DAF tape element 150 to be received. 136 .

[0056] In the following, reference will now be made to Figure 3 A schematic cross-sectional view illustrating a stacking device 100 according to another embodiment.

[0057] About the above Figure 1A-1B and Figure 2A-2D The embodiments shown are basically also applicable to Figure 3 The stack arrangement shown, namely in particular with regard to an embodiment of a spacer layer 130 , has an optional barrier structure 132 .

[0058] like Figure 3 As shown, a recess or base substrate cavity 114 is provided in the base substrate 110 starting from its second main surface area 110-B, which extends downward to a base substrate section 116 in which the sensor assembly 120 is arranged. The base substrate section 116 is mechanically connected or coupled to the remaining area 118 of the base substrate 110, for example, via a so-called "spring element" or "stress decoupling element" 117. Since an access opening can be provided from the second surface area 110-B of the base substrate 110 to the cavity area 140 by this design, and the cavity area 140 is in fluid communication with the ambient atmosphere of the device 110, for example, via this access opening, it is possible, for example, to optionally dispense with the need for a spring element 117. Figure 1B The access opening 134 is formed so that the spacer layer 130 and the impermeable structure 132 can be configured to completely surround the cavity area 140.

[0059] Therefore, in Figure 3 In the device 100, the sensor component 120 is arranged at the base substrate section 116, which is in turn mechanically connected or coupled to the remaining area 118 of the base substrate 110 via the spring element 117. The spring element 117 can be configured to stress-decouple the material of the base substrate section 116 (e.g., semiconductor material) from the remaining area 118 of the base substrate 110.

[0060] In other respects, such as reference Figure 1A-1B and Figure 2A-2D The above-mentioned embodiments of the device 100 are also applicable to Figure 3 device 100.

[0061] The specific design solutions of different elements of the device or stacking device 100 of the present invention and the technical effects obtained therefrom will be discussed in summary below.

[0062] The present solution combines the functions of the DAF tape or DAF tape element 150 and the specially constructed spacer layer 130 with a glue barrier structure (adhesive leakage prevention structure) 132 which can be made of, for example, SU8 material or other epoxy resin materials or plastic materials (e.g. polyimide). The DAF tape element is essentially non-liquid and "crawls" or "flows" along the cavity edge only in areas where high mechanical forces are applied. And just at the cavity edge, i.e. the edge area of ​​the cavity area 140, the barrier structure is constructed, for example as an integrated part of the spacer layer 130, as an array of recesses 136 around the cavity area 130, which, for example, receives the material of the DAF tape element 150 that overflows (oozes out) during the fixing or curing process by increasing mechanical pressure and / or increasing temperature. Finally, the cavity area 140 is constructed by the uppermost stacking element 160 with the spacer layer 150 arranged therein, which can be constructed, for example, as an ASIC chip / die (e.g. microphone ASIC) or also as a metal foil or glass foil.

[0063] According to an embodiment, the spacer layer 130 can now have a so-called "barrier structure" 132 in an area adjacent to the cavity or cavity region 140 for inhibiting capillary creep or flow of partially liquefied DAF material 150 during placement of a stack element 160 with DAF tape elements 150 at the spacer layer 130 or when the material of the DAF tape elements 150 is solidified. The barrier structure 132 can, for example, have different geometries, such as pillars perpendicular to the chip plane, i.e. perpendicular to the main surface area 110-A of the base substrate 110, which widen and / or taper in the direction of the cavity region 140 with the MEMS element 120, for example in the form of a sawtooth pattern parallel to the chip plane or a rectangle parallel to the chip plane.

[0064] The function of the impermeable structure 132 is to prevent or control the capillary creep or flow of the DAF material toward the MEMS element 120 in the cavity 140 during the assembly of the stacked elements or when the DAF layer elements are hardened and when the material of the DAF tape elements is inevitably partially liquefied. To this end, the impermeable structure 132 has a columnar structure, a sawtooth structure, a trapezoidal structure, a rectangular structure, etc. in the transition area between the solid spacer layer and the cavity 140 (with the sensor component 120), which at least suppresses or prevents the uncontrolled flow of the partially liquefied DAF material based on the capillary force (generated by the special design of the impermeable structure).

[0065] Therefore, the impermeable structure 132 provides a flow inhibition area for the partially liquefied DAF material based on the increase in the capillary force of the partially liquefied DAF material on the one hand, and provides a sufficiently enlarged volume that is specifically adjusted to accommodate the partially liquefied DAF material that undergoes capillary creep or flow when the temperature increases and / or the mechanical pressure influence increases and to prevent it from moving in the direction of the cavity area 140 in a limited manner, so that, for example, a basically defined cavity size above and on the sides of the sensor component 120 can be achieved even in mass production at the wafer level.

[0066] In addition, the function of mechanical engagement of the DAF material and the spacer layer 130 can be achieved by the provided impermeable structure 132, thereby improving the mechanical strength of the stacked device 100 and the sensor assembly 120. Thus, by connecting the DAF material of the DAF tape element between the stacked element 160 and the spacer layer 130 arranged at the base substrate 110 over as large an area as possible, a structured area of ​​the impermeable structure 132 of the spacer layer 130 can be obtained to achieve a larger bonding surface or a larger mechanical contact surface, thereby improving the mechanical stability between the layers of the stacked device 100.

[0067] In the impermeable structure 132, a larger area or space can be reserved at the corners of the cavity area 140 by means of the enlarged recess 136, so as to be able to accommodate the partially liquefied DAF material, which is usually pressed more there. In addition, the impermeable structure 132 is, for example, arranged symmetrically around the cavity area 140 and thus around the sensor assembly 120. Thus, the impermeable structure 132 provides a defined stop area for the partially liquefied DAF material, thereby providing the cavity area 140 with defined lateral and vertical dimensions.

[0068] As described above, a reduction in the overall height of the package or stack can be achieved by the device or stacked device 100. In addition, very low defined cavity heights of less than 10 μm can be achieved. It is also possible that the packaging or stacked device process can be performed immediately after the front end process (FEOL process), for example on the wafer level.

[0069] Reference will now be made to Figure 4 An exemplary flow chart illustrating a method for manufacturing a device or stacking a device 100 according to one embodiment.

[0070] In the method 200 for producing the stacked arrangement 100 , firstly in step 210 a base substrate 110 is provided on which the sensor component 120 is arranged.

[0071] In step 220, a spacer layer 130 is formed or applied on the base substrate 110. This can be done, for example, by means of a deposition process.

[0072] In step 230, the spacer layer 130 is structured to expose the sensor component 120 and the corresponding cavity region 140. The structuring 230 of the spacer layer 130 can be performed by photolithographic exposure of the sensor or MEMS element 120 and the corresponding cavity region 140, wherein an impermeable structure 132 can also be formed in the spacer layer 130 near the cavity region 140.

[0073] In step 240, a stacking element 160 is provided, at which a DAF tape element 150 is arranged, wherein in step 250 the stacking element 160 on which the DAF tape element 150 is arranged is arranged or mechanically fixed at the spacer layer 130. The mechanical fixing of the stacking element 160 on which the DAF tape element 150 is arranged at the spacer layer 130 can be carried out, for example, under the application of mechanical pressure and can cause capillary creep or flow of the partially liquefied DAF material of the DAF tape element 150.

[0074] In step 260 , the DAF tape element 150 may be hardened by applying heat and / or mechanical pressure to solidify the DAF material of the DAF tape element 150 .

[0075] According to one embodiment, in the step of structuring 230 of the spacer layer 130, an optional barrier structure 132 may be formed in the spacer layer 130 adjacent to the cavity region 140, wherein the barrier structure 132 has a recess 136. For example, the barrier structure 132 may be provided at the region between the cavity region 140 and the continuous or solid spacer layer 130 by means of an etching process.

[0076] The base substrate 110 may be configured as a chip element (semiconductor element), a semiconductor wafer (e.g., a silicon wafer), or a (printed) circuit board, for example. If the base substrate 110 is configured as a semiconductor wafer (e.g., a silicon wafer), the base substrate 110 on which the elements are arranged may be further separated as another optional step to provide individual elements.

[0077] According to one embodiment, the recess 136 arranged in the impermeable structure 132 may be configured to specifically guide the partially liquefied DAF material into the recess 136 and accommodate the DAF material therein based on the capillary force provided to the partially liquefied DAF material of the DAF tape element 150 during the step 250 of arranging or during the step 260 of curing the DAF tape element 150.

[0078] According to one embodiment, the barrier structure 132 disposed in the spacer layer 130 may be configured to inhibit capillary creep or flow of the partially liquefied DAF material of the DAF tape element 150 into the cavity area 140 based on capillary action on the partially liquefied DAF material of the DAF tape element 150 .

[0079] Although some aspects have been described as features associated with an apparatus, it should be clear that these descriptions can also be regarded as descriptions of corresponding method features. Although some aspects have been described as features associated with a method, it should be clear that these descriptions can also be regarded as descriptions of corresponding features of an apparatus or apparatus functions.

[0080] In the foregoing detailed description, different features have been partially combined together in the examples to simplify the disclosure. This type of disclosure should not be interpreted as an intention that the examples claimed for protection have more features than explicitly stated in each claim. Rather, as stated in the claims, the subject matter may be less than all the features of a single disclosed example. Therefore, the claims are included in the detailed description, where each claim can serve as its own separate example. Although each claim can serve as its own separate example, it should be noted that although the dependent claims in the claims involve specific combinations with one or more other claims, other examples also include combinations of dependent claims with the subject matter of any other dependent claims or combinations of each feature with other dependent or independent claims. Such combinations are included unless it is stated that a specific combination is not intended. It is also intended to include a combination of the features of a claim with any other independent claim, even if the claim is not directly subordinate to the independent claim.

[0081] Although specific embodiments have been shown and described herein, it will be apparent to those skilled in the art that various alternative and / or equivalent embodiments for the specific embodiments shown and described herein may be substituted without departing from the subject matter of the present application. The present application text is intended to cover all adaptations and variations of the specific embodiments described and discussed herein. Therefore, the present application content is limited only by the literal language of the claims and their equivalent embodiments.

[0082] Reference numerals list

[0083] 100 Installations

[0084] 110 Base substrate

[0085] 110-A First main surface region of base substrate

[0086] 110-B Second main surface region of base substrate

[0087] 112 Contact pad

[0088] 116 Basic substrate section

[0089] 117 Stress decoupling element

[0090] 118 Remaining area of ​​base substrate

[0091] 120 sensor assembly

[0092] 130 Spacer

[0093] 131 Solid area of ​​the spacer layer

[0094] 132 Anti-seepage structure

[0095] 134 Through Holes

[0096] 136 recess

[0097] 138 Pillar

[0098] 140 Cavity area

[0099] 150 DAF with components

[0100] 152 Mechanical contact area

[0101] 160 stacked components

[0102] 162 Contact pad

[0103] 200 Methods

[0104] 210-260 Methods and Steps

[0105] ΔP Pressure change

[0106] V 136 Accommodation capacity

[0107] ΔV 136 Partial volume

Claims

1. A stacking device (100), comprising: A base substrate (110) having a sensor component (120) arranged on the base substrate; a spacer layer (130) on the base substrate (110), wherein the spacer layer is structured to provide a cavity region (140) in which the sensor component (120) is arranged exposed on the base substrate (110); and a DAF tape element (150) at the stacking element, wherein the DAF tape element (150) is configured to mechanically firmly connect the stacking element to the spacer layer (130) arranged at the base substrate (110) and to obtain the cavity region; The spacer layer (130) has an impermeable structure (132) with a recess (136) adjacent to the cavity region (140), wherein the impermeable structure (132) with the recess (136) is configured to inhibit capillary creep or flow of the DAF material of the DAF tape element in a partially liquefied state.

2. The stacking device according to claim 1, wherein the impermeable structure (132) is configured to exert a capillary action on the DAF material of the DAF tape element in a partially liquefied state.

3. The stacking device (100) according to claim 1 or 2, wherein the impermeable structure (132) arranged in the spacer layer (130) is constructed to specifically guide the partially liquefied DAF material into the recess (136) based on the capillary action of the DAF material of the DAF tape element (150) and to accommodate the DAF material in the recess.

4. A stacking device according to claim 1 or 2, wherein the anti-seepage structure (132) in the spacer layer (130) is constructed between the cavity area (140) and the solid material area of ​​the spacer layer (130), wherein the spacer layer (130) extends parallel to the main surface area (110-A) of the base substrate (110) and / or the main surface area (160-A) of the stacking element (160).

5. The stacking device according to claim 1 or 2, wherein the recess constructed by the impermeable structure (132) in the spacer layer (130) provides a defined predetermined receiving volume for the partially liquefied DAF material of the DAF tape element (150) to be received.

6. A stacking device according to claim 1 or 2, wherein the recess (136) in the anti-seepage structure (132) is arranged adjacent to the cavity area (140) and also surrounds the cavity area (140) adjacent to each other, and the recess extends between the stacking element (160) on which the DAF band element (150) is arranged and the base substrate (110) parallel to the main surface area (110-A) of the base substrate (110).

7. The stacking device (100) according to claim 6, wherein at least a portion of the recess (136) of the impermeable structure (132) is configured in a rectangular shape adjacent to the cavity region (140).

8. The stacking device (100) according to claim 6, wherein at least a part of the recess of the impermeable structure (132) is configured to widen or taper in the direction of the cavity region (140).

9. The stacking device (100) according to claim 8, wherein at least a portion of the concave portion (136) of the barrier structure is configured in a sawtooth shape adjacent to the cavity region (140).

10. A stacking device (100) according to claim 1 or 2, wherein the anti-seepage structure (132) includes a columnar structure having a plurality of pillars, the pillars being constructed to be spaced apart from each other and perpendicular to the main surface area (110-A) of the base substrate (110) and having recesses (136) constructed between adjacent ones of the pillars.

11. The stacking device (100) according to claim 1 or 2, wherein the anti-seepage structure has a groove structure in the spacer layer (130) adjacent to the cavity area (140).

12. A stacking device (100) according to claim 1 or 2, wherein the cavity area (140) parallel to the main surface area (110-A) of the base substrate (110) is constructed as a rectangle, wherein the size of the recess (136) formed in the anti-seepage structure (132) of the spacer layer (130) and adjacent to the corner area of ​​the rectangular cavity area (140) is at least 1.5 times that of the remaining recesses at the side areas of the rectangular cavity area (140).

13. A stacking device (100) according to claim 1 or 2, wherein the recesses (136) constructed in the impermeable structure (132) of the spacer layer (130) are arranged symmetrically around the cavity area (140), and the cavity area has a MEMS element located therein.

14. The stacked device (100) according to claim 1 or 2, wherein the spacer layer (130) has a thickness in the range of 5 μm to 50 μm or in the range of 10 μm to 20 μm.

15. The stacking device (100) according to claim 1 or 2, wherein the DAF tape element (150) has a thickness in the range of 5 μm to 50 μm or in the range of 12 μm to 20 μm.

16. The stacking device of claim 1 or 2, wherein the DAF tape element has a dual-stage material.

17. The stacked device according to claim 1 or 2, wherein the spacer layer has a plastic material or an epoxy material made of an imide group.

18. The stacking device (100) according to claim 1 or 2, wherein the anti-seepage structure (132) arranged in the spacer layer (130) is configured to at least inhibit the capillary creeping or flow of the partially liquefied DAF material of the DAF tape element (150) into the cavity area (140) based on the capillary action on the partially liquefied DAF material of the DAF tape element (150).

19. A method (200) for manufacturing a stacking device (100), comprising the following steps: Providing a base substrate (110) on which a sensor component is arranged; applying a spacer layer (130) on the base substrate (110); Structuring the spacer layer (130) to expose the sensor component and the corresponding cavity area; providing a stacking element (160) at which a DAF tape element (150) is arranged, and arranging the stacking element with the DAF tape element (150) at the spacer layer (130); and Hardening the DAF tape element by applying heat and / or mechanical pressure to solidify the DAF material of the DAF tape element (150); In the step of structuring the spacer layer (130), an impermeable structure (132) is formed in the spacer layer adjacent to the cavity region (140), wherein the impermeable structure (132) has a recess (136).

20. The method (200) according to claim 19, wherein the recess (136) arranged in the impermeable structure is configured to guide the partially liquefied DAF material of the DAF tape element (150) in a targeted manner into the recess (136) and accommodate the partially liquefied DAF material at the recess based on a capillary force provided to the partially liquefied DAF material of the DAF tape element (150) during the step of hardening the DAF tape element (150).

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