Electronic device and manufacturing method having a packaging structure with improved electrical accessibility

Abstract

The present disclosure relates to an electronic device and a manufacturing method having a packaging structure with improved electrical accessibility, wherein the electronic device includes: a semiconductor die, integrating electronic components; a lead frame, accommodating the semiconductor die; a protective body, laterally surrounding and on top of the semiconductor die, and at least partially surrounding the lead frame structure, defining a top surface, a bottom surface and a thickness of the electronic device; and a conductive lead, electrically coupled to the semiconductor die. The conductive lead is modeled in such a way that it extends throughout the thickness of the protective body for forming a front electrical contact that can be connected from the top surface of the electronic device, and a back electrical contact that can be connected from the bottom surface of the electronic device.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of September 22, 2015, application number 201510609799.9, and name “Electronic device and manufacturing method with packaging structure with improved electrical accessibility”. Technical Field

[0002] The present invention relates to an electronic device including a packaging structure with improved electrical accessibility and a method of manufacturing the electronic device. Background Art

[0003] As is known, in the manufacture of semiconductor devices, packaging or packaging is the final step in converting a semiconductor substrate into a functional component that can be mounted on a printed circuit board (PCB). Typically, the semiconductor substrate is in the form of a semiconductor die. The package provides protection for the semiconductor die and provides the necessary electrical connections through which it can provide signals to and obtain signals from the semiconductor die.

[0004] To meet the needs of increasingly high integration and size reduction, currently used packaging methods include die-level or wafer-level packaging (WLP) and 3D packaging. Other solutions have conceived surface mount devices (SMDs), which can further reduce the size of the package and the cost of the components. For example, consider what is known as PowerFlat TM This type of package reduces the space occupied by the package itself when mounted on a PCB, and at the same time improves the heat exchange with the PCB itself by metal connection between the bottom of the package and the PCB. Figure 1 As shown in the example, the electrical connection is obtained by extending the flat area in the bottom surface of the package. Figure 1 , package is marked by reference numeral 1. The structure 2 constituting a supporting base for the die 3 and designed to provide an electrical connection between the die 3 and the outside of the package 1 is known as a "lead frame" and extends in such a way that its bottom surface area 2b is located in the same plane as the bottom surface 1b of the package 1, thus itself constituting a part of the bottom surface 1b of the package 1. The die 3 is bonded (for example by an adhesive layer 4) to a top surface area 2a of the lead frame 2. This top surface area 2a has a flat surface clearly dedicated to coupling with the die 3, better known as a "die connection pad". The top surface area 2a of the lead frame 2 is opposite to the bottom surface area 2b of the lead frame 2.

[0005] The lead frame 2 forms a plurality of electrical contact regions 5a, 5b on the bottom surface region 2b, which are electrically insulated from each other and each designed to transmit signals from and / or to the PCB. For example, if the die 3 provides a MOS transistor, the electrical contact region 5a will be, for example, electrically coupled to the source region S of the MOSFET, while the electrical contact region 5b will be, for example, electrically coupled to the drain region D of the MOS transistor. In this example, other electrical contacts (not shown) must be provided to form gate electrical contacts.

[0006] A resin layer 7, in particular an epoxy resin, extends over the top surface area 2a of the lead frame 2 to cover and protect the die 3 and is designed to ensure electrical insulation of the lead frame 2 and the top of the die 3. The resin 7 further extends in the perforated area of ​​the lead frame 2 until it reaches the plane of the bottom surface area 2b and thus completes the formation of the bottom surface 1b of the package 1.

[0007] Since the electrical contact areas 5a, 5b both extend in the bottom surface 1b of the package 1, an electrical coupling with a PCB (not shown here) is obtained at the bottom surface 1b of the package 1. Typically, the entire bottom surface area 2b of the lead frame 2 is designed to face the PCB and thus also provides a surface for heat exchange between the package 1 and the PCB.

[0008] The current package and in particular the reference Figure 1 The package described exhibits certain drawbacks. In particular, for power applications, the heat exchange obtained with the PCB may not be sufficient to ensure good cooling of the die 3. Furthermore, the operations for testing the package 1 prove to be complex and expensive, insofar as they can only be performed by providing a PCB dedicated to the testing process, to which the package 1 is to be coupled by bonding of the bottom surface 1 b. Summary of the invention

[0009] The object of the present invention is to provide an electronic device and a method of manufacturing an electronic device which will be able to overcome key aspects of the prior art and extend its functionality.

[0010] According to the invention, an electronic device and a method of manufacturing an electronic device are obtained as defined in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] For a better understanding of the present invention, preferred embodiments provided purely by way of non-limiting examples will now be described with reference to the accompanying drawings, in which:

[0012] Figure 1 An electronic device with a package according to an embodiment of a known type is shown;

[0013] Figure 2A and Figure 2BA lead frame structure according to one aspect of the present invention is shown in a three-dimensional view and a top view respectively;

[0014] Figure 3 The structure of an electronic device in an intermediate manufacturing step is shown, including a semiconductor die housed in the Figure 2A Lead frame;

[0015] Figure 4 shows the end of the molding step Figure 3 An electronic device having a package according to one aspect of the present invention;

[0016] Figure 5A - Figure 5E Shown is the method for obtaining Figure 4 a molding step of an electronic device;

[0017] Figure 6 The top view shows the lead frame before the singulation step. Figure 2B An array of lead frames 60;

[0018] Figure 7 The image taken along the section line VII-VII is shown. Figure 4 A cross-sectional view of an electronic device;

[0019] Figure 8 Shows that according to Figure 3 A structure of an electronic device in an intermediate manufacturing step according to a variation of the embodiment;

[0020] Fig. 9 Shows the Figure 5D A modification of the molding step of Figure 8 The step of molding the intermediate structure;

[0021] Fig. 10A and Fig. 10B shows the end of the molding step Figure 8 a corresponding diagram of an electronic device having a package according to another aspect of the invention; and

[0022] Fig.11A and Fig. 11B A corresponding diagram shows an electronic device according to another aspect of the present invention. DETAILED DESCRIPTION

[0023] Reference Figure 2A , shown in the perspective view is a structure 12 designed to carry the die (ie to provide mechanical support thereto) and to provide a portion of the electrical connection between the die and the outside of the package 1. The structure 12 is known as a "lead frame". Figure 2B Shown in top view Figure 2A The lead frame 12 is provided.

[0024] Reference Figure 2A and Figure 2B , the lead frame 12 includes a central region 13 having a substantially flat exposed surface 12a, which is designed to accommodate a die and is referred to as a "die pad" or "die attach pad". A rear surface 12b of the lead frame 12 extends opposite to the surface 12a, the rear surface 12b being substantially flat and designed to form a residence or coupling base for the lead frame 12 with a portion of a PCB (not shown).

[0025] A plurality of "leads" 14, 15 extend electrically decoupled from the central region 13, while the leads 16 extend mechanically and electrically coupled to the central region 13 (particularly, they are integrally formed with the central region 13).

[0026] In more detail, the central area 13 of the lead frame 12 has a substantially quadrilateral shape and extends in a plane XY, with a thickness measured along an axis Z perpendicular to the plane XY, the thickness being comprised between approximately 100 μm and 300 μm, in particular approximately 200 μm. According to one embodiment, the central area 13 of the lead frame 12 extends along X over a distance between 3 and 6 mm (e.g. 3.22 mm) and along Y over a distance between 4 and 5 mm (e.g. 4.61 mm). The dimensions of the central area 13 may vary with respect to the dimensions indicated therein and are selected according to the die size it has to cover.

[0027] Leads 14 and 15 extend facing the side 13a of the central region 13 (extending along Y). Leads 14 and 15 each have a main extension direction along the positive direction of the axis X and are mechanically and electrically separated from the central region 13 by the groove 19. Lead 14 includes a support portion 14a directly facing the groove 19, and a plurality of protruding elements 14b mechanically and electrically coupled to the support portion 14a, the plurality of protruding elements 14b extending from the support portion 14a along X in a cantilevered manner to form interdigitated fingers 14b. The support portion 14a extends along X for approximately 1-2 mm.

[0028] Lead 15 is similar to lead 14 and comprises a support portion 15a directly facing groove 19 and only one protruding element 15b mechanically and electrically coupled to support portion 15a, extending from support portion 15a in a cantilevered manner along X to form interdigitated fingers 15b. Lead 15 is mechanically and electrically separated from lead 14 by an additional groove 21. Support portion 15a extends about 1-2 mm along X, similar to support portion 14a.

[0029] The fingers 14 b, 15 b are each designed to have a thickness along Y comprised between approximately 200 and 400 μm, for example approximately 350 μm, and a thickness along Z comprised between approximately 0.5 mm and 1.5 mm, for example approximately 0.8 mm. In particular, the thickness of the fingers 14 b and 15 b along Z is substantially equal to the thickness of the package designed or envisaged to house the leadframe 12 at the end of the manufacturing steps.

[0030] Each finger 14b, 15b faces the other finger 14b, 15b along Y and is separated from each other by a distance of about 1 mm along Y. Figure 2A and Figure 2B Three fingers 14b and only one finger 15b are shown in FIG. However, any desired number of fingers 14b, 15b can be provided starting from one.

[0031] Lead 16 extends from side 13b of central region 13 opposite side 13a along direction X, is in mechanical and electrical contact with central region 13, and advances in the negative direction of axis X. According to the embodiment of FIG. 2 , lead 16 extends along axis Y over the length of side 13b. However, it is obvious that modifications can be envisaged. For example, lead 16 can extend along Y for a distance shorter than the length of side 13b. Alternatively, leads of the same type as leads 14 and / or 15 can also be provided in the area corresponding to side 13b. In addition, lead 16 has a thickness along axis Z that is equal to the thickness of leads 14, 15.

[0032] The lead 16 includes a support portion 16 a directly coupled to the central portion 13 , and a plurality of fingers 16 b branching along the axis X in a cantilever manner from the support portion 16 a .

[0033] Figure 3 An intermediate packaging structure 23 is shown, comprising Figure 2A and Figure 2B 1 and a die 25 accommodated in the central region 13 of the lead frame 12. The die 25 is of a previously designed processing type and implements, for example, a MOS transistor. For this purpose, the die 25 enables the application of external metal contacts, namely: a source contact 25a; a gate contact 25b, which is electrically insulated from the source contact 25a by an insulating region 26; and a drain contact 25c, which extends on the back side of the die 25 and is in electrical contact with the central region 13 of the lead frame 12. The source contact 25a, the gate contact 25b and the drain contact 25c are made of a metallic material in a per se known manner, for example aluminum or copper or a metal alloy comprising aluminum or copper, or another metal.

[0034] The source region 25a is electrically coupled to the support portion 14a of the lead 14 by a metal strip 28, for example aluminum. The conductive strip 28 is preferably a conductive lead in power applications. Obviously, alternatives to the ones shown in the figures are possible, as required. The gate region 25b is electrically coupled to the support portion 15a of the lead 15 by a conductive lead 30. The drain terminal of the transistor integrated in the die 25 is coupled to the central portion 13 of the lead frame 12 by a metal bonding contact or a conductive adhesive layer formed in a manner known per se. Since the lead 16 is in direct electrical contact with the central portion 13 of the lead frame 12, the lead 16 is electrically connected to the drain terminal of the transistor integrated in the die 25.

[0035] Figure 4 An electronic device 41 is shown having a package 40 that encapsulates the die 25 and partially encapsulates the Figure 3 The lead frame 12. By Figure 3 The lead frame 12 and the die 25 are subjected to a molding step, the central portion 13 of the lead frame, the supporting portions 14a, 15a of the leads 14, 15 and the electrical connections 28, 30 are completely covered by a polymer layer 42 (usually epoxy resin) to obtain an electronic device 41. The grooves 19 and 21 are also filled with the polymer layer 42. The leads 14, 15 and 16 are not completely covered by the polymer layer 42 and protrude to the outside of the package 40, so that they can be electrically accessed from outside the package 40 itself.

[0036] The package 40 comprises a top side 40a lying in a plane parallel to the plane XY, and a bottom side 40b lying opposite the top side 40a in a direction Z and lying in a corresponding plane parallel to the plane XY. The package 40 further comprises side surfaces, in particular side surface 40c lying in a plane parallel to the plane XY, and side surfaces 40d lying opposite the side surface 40c in a direction X and lying in a corresponding plane parallel to the plane YZ.

[0037] If you can Figure 4 As noted, respective top surface portions 14', 15' and 16' of the fingers 14b, 15b and 16b are not covered by the polymer layer 42 and lie substantially in the same plane as the top side 40a of the package 40. Similar bottom surface portions of the fingers 14b, 15b, 16b may be obtained on the bottom side 40b of the package 40 (not shown in the figures).

[0038] In addition, leads 14 and 15 can be accessed from side surface 40c of package 40 (via lateral protrusions of access fingers 14b, 15b), and lead 16 can also be accessed from side surface 40d of package 40 opposite side 40c (via lateral protrusions of access fingers 16b).

[0039] The molding step used to complete the formation of package 40 is performed after a film assisted molding (FAM) process available from Boschman Technology. The film assisted molding process enables the encapsulation of ultra-thin semiconductor components on one or more surfaces thereof.

[0040] Reference Figure 5A The film assisted molding process is designed to use a packaging system 50 including a first mold 52 and a second mold 54. The second mold 54 is designed to support the lead frame 12 on the back side of the lead frame 12 (herein, the back side of the lead frame 12 is defined as the surface of the lead frame 12 opposite to the surface of the region 13 in the region where the die 25 resides) Figure 3 The first mold is shaped to accommodate the top surface of the leadframe 12 (particularly the leads 14 - 16 ), as well as the die 25 and the electrical connections formed by the strips 28 and by the conductive leads 30 .

[0041] The first mould 52 comprises for this purpose a cavity 55 which, at the end of the moulding step, at least partially defines the final shape of the polymer layer 42. The second mould 54 has in this example a flat resting surface.

[0042] The packaging system 50 is further designed to use a mold film 56 that is designed to conform to the shape of the cavity 55 of the first mold 52, as shown in FIG. Figure 5B and Figure 5C For this purpose, the molding films 56 can consist of a moldable material designed to adhere to the walls of the cavity 55 or can be preformed and premolded so that they assume the same shape as the cavity 55 .

[0043] The first mold 52, the mold film 56, and the cavity 55 are sized and / or modeled in such a way that the top surfaces 14', 15', 16' of the fingers 14b, 15b, 16b of the leads 14, 15, 16 are in direct contact with the mold film 56 when the first mold is placed in contact with the second mold, such as Figure 5C As shown by arrow 57. Figure 5D 5 shows the first and second molds in contact with each other through the mold film 56. More specifically, in Figure 5D During the step of, the top surfaces 14', 15', 16' of the fingers 14b, 15b, 16b are partially embedded in the molding film 56 to be protected in the subsequent molding step. In other words, the molding film 56 is partially embossed by the top surfaces 14', 15', 16' of the fingers 14b, 15b, 16b.

[0044] Figure 5EA molding step is shown, in which a polymer material, more particularly a thermoplastic polymer or resin, is injected into the cavity 55 to form a polymer layer 42, particularly on top of the die 25 and the electrical contacts 28 and 30. The portions of the leads 14-16 protected by the molding film 56 are not covered by the polymer material. The portion of the bottom surface of the lead frame 12 in contact with the second mold 54 is also not covered by the polymer material.

[0045] Next, a curing step of the polymer material is performed to promote its hardening. In the case of thermoplastic materials, heating is performed to a temperature that depends on the type of material used. For example, in the case of epoxy resins, a baking step is performed in an oven at 175° C. for 8 h.

[0046] Subsequently, an optional step of package cleaning (deburring step) is performed for removing any possible polymer material residues from the areas of the lead frame 12 that should remain exposed for coupling from the outside.

[0047] For simplicity of expression, the present invention has been shown and described with reference to one lead frame accommodating only one die. Figure 5A - Figure 5E However, it is usually Figure 6 The molding operation is performed by way of example (in top view) on an array of lead frames 12 of the type mechanically bonded together. In top view, Figure 6 An array 60 of lead frames is shown, wherein the die 25 and electrical connections 28 , 30 have been omitted for simplicity of presentation.

[0048] After the molding and hardening steps of the polymer material, each lead frame 12 is separated from the adjacent lead frames 12 by performing a cutting step (in a manner known per se) in the cutting regions 61. In this way, each package 40 is separated from the other packages 40.

[0049] Figure 7 The image taken along the section line VII-VII and Figure 5E After the step Figure 4 40 is a side cross-sectional view of the package.

[0050] As from Figure 7 As can be noted, the bottom side 40b of the package 40 is electrically accessible by contacting an exposed portion of the back side of the lead frame 12, i.e., the surface of the lead frame 12 opposite the central area 13 on which the die 25 resides along the axis Z and which represents the drain contact of the die 25 itself. The top side 40a of the package 40 is also electrically accessible by contacting an exposed portion of the front side of the lead frame 12.

[0051] Figure 8Another embodiment of the invention is shown. In this case, after the lead frame 12 having the leads 14-16 of the type shown in FIG. 2 and already described with reference to that figure is arranged in the appropriate position, next follows the step of coupling the die 25 in the central region 13 of the lead frame 12, as already described with reference to Figure 3 described.

[0052] according to Figure 8 In the embodiment of the present invention, there follows another step of coupling a conductive sheet 70, for example of metal (particularly copper), on top of the die 25, which is in electrical contact with the source metallization 25a but not with the gate metallization 25b. The conductive sheet 70 extends until it reaches and electrically contacts the support portion 14a of the lead 14, thus replacing the Figure 3 The strip 28 shown in FIG. The gate metallization structure 25b is instead electrically coupled to the support portion 15a of the lead 15 by the previously described conductive lead 30. The conductive sheet 70 is mechanically coupled to the source metallization structure 25a by means of, for example, a conductive adhesive layer. Other embodiments are possible, such as metal bonding or others.

[0053] The thickness of the conductive sheet 70 is selected so that after the step of mechanically coupling with the die 25, its maximum height measured along the positive direction of the axis Z is substantially equal to the maximum height reached by the leads 14, 15 and 16 along the positive direction of the axis Z. In other words, the top surface 70' of the conductive sheet 70 is substantially coplanar with the corresponding top surfaces 14', 15' and 16' of the leads 14, 15 and 16. Possible variations in the height reached by the conductive sheet 70 along Z relative to the desired height can be reduced, for example, to production spread.

[0054] For example, according to one embodiment, the leadframe 12 has a thickness of about 200 μm±10 μm along Z in the central portion 13, the layer coupled between the central region 13 and the die 25 (e.g., solder bumps or conductive glue) has a thickness of about 40 μm±10 μm along Z, the die 25 has a thickness of about 200 μm±10 μm along Z, the further coupling layer between the source metallization structure 25a of the die 25 (e.g., solder bumps or conductive glue) and the conductive sheet 70 has a thickness of about 40 μm±10 μm along Z, and finally, the thickness of the conductive sheet 70 is selected so as to achieve the maximum height achieved by the leads 14-16 along Z. For example, considering that the leads 14-16 all have the same thickness equal to 0.8 μm, the conductive sheet 70 is selected to have a thickness of 240 μm.

[0055] In this way, according to Figure 5A - Figure 5EStep 74, an intermediate lead frame structure 73 is obtained, following the same molding process as described with reference to the intermediate lead frame 23. Figure 6 The same considerations made apply here as well. The possible differences between the maximum height reached by the conductive sheet 70 compared to the maximum height reached by the leads 14-16, taking into account the tolerances shown previously, are caused by manufacturing variations. In any case, since the conductive sheet 70 and the leads 14-16 are pressed against the molding film 56 during the molding step and are thereby partially sunk therein, possible variations in thickness due to manufacturing variations are compensated and the top surface 70' of the conductive sheet 70 and the top surfaces 14'-16' of the leads 14-16 are protected during the molding step and are not covered by the polymer layer.

[0056] Fig. 9 In the case of the intermediate lead frame structure 73, Figure 5D It should be noted that in Fig. 9 In the case of , the conductive sheet 70 is also in direct contact with the mold film 56 at its top surface 70 ′. More specifically, in Fig. 9 During the step of, the top surfaces 14', 15', 16' of the fingers 14b, 15b, 16b and the top surface 70' of the conductive sheet 70 are partially embedded in the mold film 56 to be exposed during the subsequent molding step (according to Figure 5E In other words, the molded film 56 is partially squeezed by the top surfaces 14 ′, 15 ′, 16 ′ of the fingers 14 b, 15 b, 16 b and by the top surface 70 ′ of the conductive sheet 70 .

[0057] Fig. 10A Shown in Fig. 9 After the molding step, the Figure 8 The electronic device 91 of the package 90 of the intermediate leadframe structure 73 is obtained by completely covering the central portion 13 of the leadframe 12, the supporting portions 14a, 15a of the leads 14, 15, the die 25 and the conductive leads 30 by a polymer layer 92 (having the same properties as described with reference to the polymer layer 42). The trenches 19 and 21 are also filled with the polymer layer 92.

[0058] Package 90 comprises a top side 90a lying in a plane parallel to plane XY, and a bottom side 90b lying opposite top side 90a in direction Z and lying in a corresponding plane parallel to plane XY. Package 90 further comprises side surfaces, in particular side surface 90c lying in a plane parallel to plane YZ, and side surface 90d lying opposite side surface 90c along X and lying in a corresponding plane parallel to plane YZ.

[0059] With respect to the conductive sheet 70, note that it is not completely covered by the polymer layer 92. In particular, the top surface 70' of the conductive sheet 70 is exposed towards the outside of the package 90 in the area corresponding to the top side 90a and is electrically accessible. The portion of the sheet 70 extending along Z to a height lower than the height of the top surface 70' is instead covered by the polymer layer 92 (possibly except at Fig. 9 70 which is embedded in the moulding film during the step of moulding).

[0060] Leads 14, 15 and 16 are not completely covered by polymer layer 92 and protrude outside package 90 so that they can be electrically accessed from outside package 90 on top side 90a and bottom side 90b, or laterally on side surface 90c (leads 14, 15) and side surface 90d (lead 16). Fig. 9 It may be noted that portions 14 ′, 15 ′, 16 ′ of the top surfaces of the fingers 14 b, 15 b, 16 b are not covered by the polymer layer 92 and lie substantially in the same plane as the top side 90 a of the package 90 , coplanar with the exposed surface 70 ′ of the conductive sheet 70 .

[0061] For completeness of illustration, it may be noted that leads 14 and 15 are further accessible from side surface 90 c of package 90 , and lead 16 is also accessible from side surface 90 d of package 90 opposite side 90 c .

[0062] Fig. 10B shows a rotation of 180° about the axis X Fig. 10A 90b of the electronic device 91 for illustrating the bottom surface 90b. It can be noted that the bottom surface portions 14", 15", 16" of the fingers 14b, 15b, 16b can be electrically accessed from the bottom side 90b of the package 90. The bottom surface of the lead frame 12 (opposite to the central area 13 where the die 25 is located along Z) is further extended and exposed on the bottom side 90b of the package 90. In this way, in addition to the presence of the leads 14-16, the package 90 also has two conductive surfaces (particularly metal conductive surfaces) in the area corresponding to the top side 90a and in the area corresponding to the bottom side 90b.

[0063] Fig.11A and Fig. 11B A top view and a bottom view are respectively shown of an electronic device 101 having a package 100 according to another embodiment of the present invention.

[0064] The package 100 comprises a top side 100a lying in a plane parallel to the plane XY, and a bottom side 100b lying opposite the top side 100a in a direction Z and lying in a corresponding plane parallel to the plane XY. The package 100 further comprises side surfaces, in particular a side surface 100c lying in a plane parallel to the plane YZ, and a side surface 100d lying opposite the side surface 100c in a direction X and lying in a corresponding plane parallel to the plane YZ.

[0065] In this case, there are leads 114-116, shaped so that after the molding step, they do not protrude from the polymer layer on the side surfaces 100c and 100d, but are located in substantially the same respective plane as the side surfaces 100c and 100d (ie in a plane parallel to the plane YZ). The package 100 encapsulates Figure 8 An intermediate leadframe structure of the type shown in FIG. 1 is shown and, in addition to the presence of leads 114 - 116 connectable from both the top side 100 a and the bottom side 100 b , there are also conductive areas electrically accessible from both the top side 100 a and the bottom side 100 b .

[0066] The invention according to any of the previously described embodiments can be applied in many technological sectors. In particular, a heat exchanger can be mounted on the exposed surface 70 ′ of the conductive sheet 70 and / or on the exposed surface 12 b of the lead frame 12 .

[0067] In addition, refer to Figure 4 as well as Fig. 10A - Fig. 10B Since the leads 14-16 have an elongated shape protruding from the package in a cantilevered manner, they enable the package to be mounted perpendicularly to the plane of the PCB, namely by inserting the leads 14-15 or alternatively 16 into holes intentionally provided in the PCB.

[0068] From an examination of the features of the present invention achieved in accordance with this disclosure, the advantages it provides will be apparent.

[0069] The possibility of accessing the pins of the package from both sides of the package itself allows the designer greater flexibility at the design stage, for example in the development of different and independent circuits for the power supply of the die encapsulated in the package and for sending its control signals. The complexity of the printed circuit used for the test step can be further reduced (capable of accessing the die on the top without having to perform its bonding to the test PCB).

[0070] Furthermore, the area for heat exchange is increased, which optimizes the performance in terms of heat dissipation. The conductive sheet 70 (exposed on the top side of the package and thus acting as a heat exchanger) is in contact with the hottest part of the die 25, namely with the metallization structure that processes the power signal (in the case of a transistor, in contact with the source metallization structure near the MOS junction where the most heat is generated), then Fig. 10A - Fig. 10B as well as Fig.11A - Fig. 11B This is more effective in the case of embodiments of the present invention.

[0071] Finally, it is evident that modifications and variations may be made to the invention described and illustrated herein without thereby departing from the scope of the invention as defined in the appended claims.

[0072] For example, the conductive sheet 70 may not be electrically coupled to the lead 14. In this case, in addition to the conductive sheet 70, there is also a strip 28 forming an electrical connection between the source region and the lead 14. The conductive sheet 70 extends over the die 25, is in thermal contact with it, and has exclusively the function of a heat exchanger towards the outside of the package.

[0073] Furthermore, the conductive lead 16 coupled to the drain contact of the transistor may be omitted. In this case, electrical access to the drain contact may be achieved from the bottom surface 12b of the lead frame 12 in any case.

[0074] In addition, Figure 5A - Figure 5E During the molding step shown in , another molding film similar to molding film 56 can also be inserted between the second mold 54 and the intermediate package structure 23 , 73 so that the lead frame 12 and the leads 14 - 16 remain on the other molding film and are better protected during the molding step.

Claims

1. A semiconductor package, comprising: Semiconductor dies with integrated electronic components; a lead frame comprising a support region to which the semiconductor die is coupled and an electrically conductive lead having a first electrical contact surface, a second electrical contact surface opposite the first electrical contact surface, and a third electrical contact surface extending between the first electrical contact surface and the second electrical contact surface; a conductive member electrically coupling the electronic component of the semiconductor die to the conductive lead; as well as a protection body over the support area of ​​the lead frame, the die, and the conductive member and around a portion of a side surface of the conductive lead, the protection body having a first surface, an opposite second surface, and a side surface, the conductive lead extending through the protection body from the first surface to the second surface, the first electrical contact surface of the conductive lead being exposed at the first surface of the protection body, the second electrical contact surface being exposed at the second surface of the protection body, and the third electrical contact surface being exposed at the side surface along the entire thickness of the protection body, wherein a top surface of the conductive member is exposed from the first surface of the protection body, and The semiconductor package further includes a mold film under the protection body, the mold film is in direct contact with the interior of the protection body and is configured to form a cavity for accommodating the semiconductor die, the lead frame and the conductive member.

2. The semiconductor package of claim 1 , wherein the semiconductor die has an upper surface and an electrical access area on the upper surface, wherein the conductive member has a first end coupled to the electrical access area and a second end coupled to the first electrical contact surface of the conductive lead. 3 . The semiconductor package of claim 1 , wherein the semiconductor die is electrically coupled to the support region of the lead frame. 4 . The semiconductor package of claim 1 , wherein the conductive lead includes a cantilever portion between the first electrical contact surface and the second electrical contact surface, the cantilever portion extending from a side surface of the protection body. 5 . The semiconductor package according to claim 1 , wherein the conductive member is one of a conductive sheet or a conductive strip. The semiconductor package according to claim 1 , wherein a lower surface of the support region remains exposed from the protection body.

Images