Liner structure, reaction chamber and semiconductor processing equipment

Abstract

The present invention provides a liner structure, a reaction chamber and a semiconductor processing device, wherein the liner structure comprises: a liner body, comprising an upper ring portion and a lower ring portion forming a stepped structure, wherein the outer diameter of the lower ring portion is smaller than the inner diameter of the upper ring portion; and a liner opening for allowing a workpiece to enter and exit is provided on the upper ring portion, wherein the liner opening extends to the lower end of the upper ring portion; an inner door is provided below the upper ring portion, wherein the inner diameter of the inner door is the same as the inner diameter of the upper ring portion, and the inner door is liftable so as to be able to open or close the liner opening. The technical solutions of the liner structure, the reaction chamber and the semiconductor processing device provided by the present invention can not only avoid scratching between the inner door and the liner, but also ensure the integrity of the inner wall of the chamber and the inner wall of the liner, thereby improving the uniformity of the airflow field.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a lining structure, a reaction chamber and semiconductor processing equipment. Background Art

[0002] Plasma etcher is usually used to complete electrochemical processing of wafers. In order to obtain a chamber environment with smooth airflow and to prevent the inner wall of the chamber from being directly bombarded by plasma, a liner is generally installed on the inner side of the side wall of the chamber. In addition, in order to be able to transfer wafers into and out of the chamber, openings need to be provided on the chamber wall and the liner for the wafer to pass through, and a liftable inner door is also provided to open or close the liner opening.

[0003] However, the existing lining structure inevitably has the following problems in practical application:

[0004] First, since the inner diameter of the inner door is the same as the outer diameter of the inner liner, the inner door is easy to scrape against the outer peripheral wall of the inner liner during the rising process, generating particles, thereby polluting the chamber environment and affecting the production yield of the wafers; at the same time, since the inner wall of the inner door is not aligned with the inner wall of the inner liner, the opening of the inner liner affects the integrity of the cylindrical inner wall of the inner liner, thereby affecting the uniformity of the airflow field, which is not conducive to process uniformity;

[0005] Secondly, since the space between the liner and the chamber side wall is limited, a gap needs to be reserved on the chamber side wall to allow enough space to accommodate the inner door and its driving mechanism. The existence of this gap will affect the integrity of the inner wall of the cylindrical chamber, which is also not conducive to process uniformity. Summary of the invention

[0006] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a lining structure, a reaction chamber and a semiconductor processing equipment, which can not only avoid scratches between the inner door and the lining, but also ensure the integrity of the inner wall of the chamber and the inner wall of the lining, thereby improving the uniformity of the airflow field.

[0007] To achieve the above object, the present invention provides a lining structure, comprising:

[0008] The liner body comprises an upper ring portion and a lower ring portion forming a stepped structure, wherein the outer diameter of the lower ring portion is smaller than the inner diameter of the upper ring portion; and a liner opening for allowing a workpiece to be processed to enter and exit is provided on the upper ring portion, and the liner opening extends to the lower end of the upper ring portion;

[0009] An inner door is arranged below the upper ring portion, and the inner diameter of the inner door is the same as the inner diameter of the upper ring portion, and the inner door can be raised and lowered to open or close the lining opening.

[0010] Optionally, two surfaces of the liner opening and the inner door facing each other form a labyrinth gap capable of blocking the passage of plasma.

[0011] Optionally, a convex portion is provided on a surface of the lining opening opposite to the inner door, and an inner diameter of the convex portion is greater than an outer diameter of the inner door.

[0012] Optionally, convex portions and concave portions are respectively arranged on two surfaces opposite to each other of the lining opening and the inner door; there are one or more concave portions, and the plurality of concave portions are arranged at radial intervals along the upper ring portion; the number of the convex portions is the same as the number of the concave portions, and when the inner door is in a position to close the lining opening, the respective convex portions are arranged in respective concave portions in a one-to-one correspondence.

[0013] Optionally, the lining structure further includes a lifting mechanism for driving the inner door to rise and fall, and the lifting mechanism is fixed on the lower electrode mechanism.

[0014] Optionally, the lifting mechanism includes:

[0015] A housing, used for fixedly connecting with the lower electrode mechanism;

[0016] A linear drive source, disposed in the housing, for providing linear power;

[0017] A connecting rod assembly, connected to the inner door and the linear drive source respectively;

[0018] The guide member is used to limit the movement of the connecting rod assembly in the vertical direction.

[0019] Optionally, the connecting rod assembly includes a connecting piece and two connecting rods, which are respectively located on both sides of the shell along the circumference of the lower electrode mechanism, the upper ends of the two connecting rods are connected to the inner door, and the lower ends of the two connecting rods are connected to the linear drive source through the connecting piece;

[0020] The guide member comprises two guide seats, the two guide seats are arranged on the outer wall of the shell, and a guide hole is vertically arranged on each of the guide seats; the two connecting rods pass through the guide holes on the two guide seats respectively.

[0021] Optionally, a through hole penetrating the thickness of the shell is provided at the bottom of the shell; the lower end of the driving shaft of the linear driving source extends to the outside of the shell through the through hole and is connected to the connecting member;

[0022] The lifting mechanism further includes a dynamic sealing structure for sealing the gap between the through hole and the driving shaft.

[0023] Optionally, the dynamic sealing structure includes a bellows, which is located in the shell and sleeved on the drive shaft, and the lower end of the bellows is sealingly connected to the bottom of the shell, and the upper end of the bellows is sealingly connected to the drive shaft through a flange.

[0024] Optionally, the guide member is made of corrosion-resistant material; or, an anti-corrosion layer is provided on the outer surface of the guide member.

[0025] Optionally, the lining body further includes a disc-shaped flow-uniform portion, an outer periphery of the disc-shaped flow-uniform portion is connected to the lower end of the lower ring portion, and a grid hole portion is arranged in the disc-shaped flow-uniform portion.

[0026] As another technical solution, the present invention further provides a reaction chamber, comprising a chamber, a lower electrode mechanism disposed in the chamber, and an inner lining structure disposed around the inner side of the chamber, wherein the inner lining structure adopts the inner lining structure provided by the present invention;

[0027] A cavity opening is arranged on the cavity, and the cavity opening is opposite to the lining opening.

[0028] As another technical solution, the present invention further provides a semiconductor processing equipment, including a reaction chamber, wherein the reaction chamber adopts the above-mentioned reaction chamber provided by the present invention.

[0029] Beneficial effects of the present invention:

[0030] In the technical scheme of the liner structure, reaction chamber and semiconductor processing equipment provided by the present invention, by making the upper ring part and the lower ring part of the liner body form a stepped structure, and making the outer diameter of the lower ring part smaller than the inner diameter of the upper ring part, sufficient space can be reserved between the lower ring part and the cavity to accommodate the inner door, so that there is no need to reserve a gap on the side wall of the cavity, ensuring its integrity, which is beneficial to process uniformity. At the same time, since the outer diameter of the lower ring part is smaller than the inner diameter of the inner door, this can avoid the inner door and the outer peripheral wall of the liner from scratching and generating particles, thereby improving the cleanliness of the chamber environment and improving the product yield. In addition, by making the upper ring part and the lower ring part form a stepped structure, the inner diameter of the inner door can be made the same as the inner diameter of the upper ring part while ensuring that the inner door can be opened and closed by lifting the liner opening, that is, the inner wall of the inner door is aligned with the inner wall of the upper ring part, thereby ensuring the integrity of the inner wall of the liner, thereby improving the uniformity of the airflow field and improving the process uniformity. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A cross-sectional view of a reaction chamber provided by an embodiment of the present invention;

[0032] Figure 2 for Figure 1 Enlarged view of the middle I area;

[0033] Figure 3 A three-dimensional diagram of an inner door and a lifting mechanism thereof used in an embodiment of the present invention;

[0034] Figure 4 A cross-sectional view of an inner door and a lifting mechanism thereof used in an embodiment of the present invention;

[0035] Figure 5 A radial cross-sectional view of a labyrinth gap used in an embodiment of the present invention;

[0036] Figure 6 Another radial cross-sectional view of the labyrinth gap used in the embodiment of the present invention. DETAILED DESCRIPTION

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the lining structure, reaction chamber and semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0038] See also Figure 1 The reaction chamber provided by the embodiment of the present invention comprises a chamber 1, a lower electrode mechanism 2 arranged in the chamber 1, and an inner lining structure arranged around the inner side of the chamber 1. The lower electrode mechanism 2 is used to carry a wafer and apply bias power to the wafer. The inner lining structure defines the plasma generation area and protects the chamber 1 from being corroded by the plasma.

[0039] Please also read Figures 1 to 6 In this embodiment, the lining structure includes a lining body and an inner door 5, wherein the lining body includes an upper ring portion 3 and a lower ring portion 4 forming a stepped structure, wherein the stepped structure is formed by the lower ring portion 4 bending inward from the lower end of the upper ring portion 3 and extending downward, and the outer diameter of the lower ring portion 4 is smaller than the inner diameter of the upper ring portion 3. Optionally, the lining body also includes a disc-shaped flow-leveling portion 8, the outer periphery of which is connected to the lower end of the lower ring portion 4, and optionally, the disc-shaped flow-leveling portion 8 is integrally formed with the lower ring portion 4. In addition, a grid hole portion 81 is provided in the disc-shaped flow-leveling portion 8 for allowing airflow to pass through, and can improve the uniformity of the airflow field, while preventing plasma from entering the area of ​​the cavity 1 below the flow-leveling portion. Optionally, the inner periphery of the disc-shaped flow-leveling portion 8 extends to the side wall of the lower electrode mechanism 2, so that the airflow can pass through the grid hole portion 81. In addition, the grid holes 81 may be provided on both the disc-shaped flow-uniform portion 8 and the lower ring portion 4 . In other words, the grid holes 81 are distributed on both the disc-shaped flow-uniform portion 8 and the lower ring portion 4 .

[0040] Moreover, a lining opening 31 is provided on the upper ring portion 3, and the lining opening 31 is opposite to the cavity opening 11 provided on the cavity 1, and both are used for the workpiece to be processed to enter and exit. Moreover, the lining opening 31 extends to the lower end of the upper ring portion 3, that is, the lining opening 31 is equivalent to forming a channel penetrating the upper ring portion 3 in the thickness direction of the upper ring portion 3, and the channel also has an opening penetrating downward along the axial direction of the upper ring portion 3 to the lower end of the upper ring portion 3. The inner door 5 is provided below the upper ring portion 3, and the inner door 5 is liftable, so that it can move into the lining opening 31 from the lower end of the lining opening 31 by ascending, until reaching the highest position of closing the lining opening 31; or, it can move out of the lining opening 31 from the lower end of the upper ring portion 3 by descending, until reaching the lowest position of opening the lining opening 31, at which time the workpiece to be processed can enter and exit the chamber from the lining opening 31.

[0041] By making the upper ring part 3 and the lower ring part 4 form a stepped structure, and making the outer diameter of the lower ring part 4 smaller than the inner diameter of the upper ring part 3, sufficient space can be reserved between the lower ring part 4 and the cavity 1 to accommodate the inner door 5, so that there is no need to reserve a gap on the side wall of the cavity 1, ensuring the integrity of the cylindrical inner wall of the cavity 1, which is beneficial to the process uniformity. At the same time, since the outer diameter of the lower ring part 4 is smaller than the inner diameter of the inner door 5, this can avoid the inner door 5 and the outer peripheral wall of the lower ring part 4 from scratching and generating particles, thereby improving the cleanliness of the chamber environment and improving the product yield. In addition, by making the upper ring part 3 and the lower ring part 4 form a stepped structure, while ensuring that the inner door 5 can be opened and closed by lifting the liner opening 31, the inner diameter of the inner door 5 can be made the same as the inner diameter of the upper ring part 3, that is, the inner wall of the inner door 5 is aligned with the inner wall of the upper ring part 3, thereby ensuring the integrity of the inner wall of the upper ring part 3, thereby improving the uniformity of the airflow field and improving the process uniformity.

[0042] In practical applications, if the inner door 5 directly docks with the inner wall edge of the liner opening 31 when reaching the highest position to close the liner opening 31, particles may be generated due to friction or collision, causing the chamber environment to be polluted. For this reason, preferably, the two surfaces of the liner opening 31 and the inner door 5 facing each other, that is, the inner wall of the liner opening 31 and the surrounding sides of the inner door 5 do not contact each other, and a labyrinth gap 33 capable of blocking the passage of plasma is formed between the two to ensure that the side wall of the cavity 1 will not be corroded by plasma. The so-called labyrinth gap 33 means that the gap has a specific radial cross-sectional shape to achieve the purpose of blocking the passage of plasma. The radial cross-sectional shape of the labyrinth gap includes, for example, a broken line shape such as "L", "V", "W", a wavy line shape, an arc shape, etc.

[0043] In this embodiment, in order to form the above-mentioned labyrinth gap 33, the edge structures of the lining opening 31 and the inner door 5 can be formed in the following two ways. The first way is as follows: Figure 5As shown in FIG. 1 , the inner diameter d1 of the upper ring portion 3 is equal to the inner diameter d2 of the inner door 5, while the outer diameter D1 of the upper ring portion 3 is larger than the outer diameter D2 of the inner door 5, and a convex portion 32 is provided on the surface of the lining opening 31 opposite to the inner door 5, and the inner diameter d3 of the convex portion 32 is larger than the outer diameter D2 of the inner door 5. Thus, when the inner door 5 is in the highest position to close the lining opening 31, a convex portion 32 is formed as shown in FIG. Figure 5 A labyrinth gap 33 in the shape of a zigzag line is shown.

[0044] The second method is Figure 6 As shown, a convex portion 54 and a concave portion 34 are respectively arranged on two surfaces of the inner door 5 and the inner liner opening 31 facing each other; when the inner door 5 is in the highest position to close the inner liner opening 31, the convex portion 54 is located in the concave portion 34, which can also form a labyrinth gap 33. In practical applications, there can also be multiple concave portions 34, which are arranged at intervals along the radial direction of the upper ring portion 3; the number of convex portions 54 is the same as the number of concave portions 34, and when the inner door 5 is in the highest position to close the inner liner opening 31, each convex portion 54 is arranged in each concave portion 34 in a one-to-one correspondence. The more the number of concave portions 34 and convex portions 54, the longer the length of the labyrinth gap 33, and the better the effect of blocking the passage of plasma.

[0045] It should be noted that the inner wall of the lining opening 31 has three side surfaces, namely, a lower side surface facing downward and two side surfaces on the circumference of the upper ring portion 3, and correspondingly, Figure 4 As shown, the edge of the inner door 5 also has three side surfaces corresponding to the above three side surfaces, namely, an upper side surface 52 facing upward and two side side surfaces 51 in the circumferential direction of the inner door 5. The above convex portions 54 and concave portions 34 are respectively arranged on the three side surfaces of the lining opening 31 and the inner door 5, and the maze structure formed by the convex portions 54 and concave portions 34 on each side surface can prevent plasma from passing through the gap where the side surface is located.

[0046] In this embodiment, the lining structure further includes a lifting mechanism 6 for driving the inner door 5 to rise and fall, and the lifting mechanism 6 is fixed on the lower electrode mechanism 2. In this way, space can be saved, so that there is no need to reserve a gap on the side wall of the chamber 1, thereby ensuring its integrity, which is beneficial to process uniformity.

[0047] In this embodiment, the lifting mechanism 6 includes a shell 60, a linear drive source 61, a connecting rod assembly and a guide member 64, wherein the shell 60 is used to be fixedly connected to the lower electrode mechanism 2. Specifically, the shell 60 can be installed on the side of the lower electrode mechanism 2 and is located below the position of the lining opening 31. The linear drive source 61 is arranged in the shell 60 to provide linear power, such as a linear cylinder, a linear electric cylinder, etc. The connecting rod assembly is connected to the inner door 5 and the linear drive source 61 respectively; the guide member 64 is used to limit the movement of the connecting rod assembly in the vertical direction. With the help of the guide member 64, the inner door 5 can be accurately guided to move in the vertical direction to avoid mechanical contact between the inner door 5 and the lining. Optionally, the guide member 64 is made of a material with good corrosion resistance, such as polytetrafluoroethylene, to resist the corrosion of plasma and extend the service life. Of course, in practical applications, an anti-corrosion layer can also be provided on the outer surface of the guide member 64.

[0048] In this embodiment, if Figure 3 and Figure 4 As shown, the connecting rod assembly includes a connecting member 62 and two connecting rods 63, wherein the two connecting rods 63 are respectively located on both sides of the shell 60 along the circumference of the lower electrode mechanism 2, the upper ends of the two connecting rods 63 are connected to the inner door 5, and the lower ends of the two connecting rods 63 are connected to the linear drive source 61 through the connecting member 62. The guide member 64 includes two guide seats, which are arranged on the outer wall of the shell 60, and a guide hole is vertically arranged on each guide seat; the two connecting rods 63 pass through the guide holes on the two guide seats respectively. Since the above two guide seats are closer to the inner door 5, the guiding accuracy is higher, which can not only further reduce the motion error of the inner door 5, but also avoid mechanical contact between the inner door 5 and the inner lining. At the same time, it can also ensure that the inner wall of the inner door 5 and the inner wall of the upper ring part 3 can remain flush with each other, thereby improving the consistency of the structure.

[0049] In practical applications, the number of guide seats can be 4 or any other number according to specific needs. In addition, more than 2 guide seats can be arranged on each connecting rod 63 .

[0050] In this embodiment, the bottom wall of the housing 60 has an opening that penetrates the thickness thereof, and the linear drive source 61 includes a drive cylinder (electric cylinder or pneumatic cylinder), a drive shaft 65 connected thereto, a sleeve 66 sleeved on the drive shaft 65, and an end cover flange 67, wherein the drive cylinder is located inside the housing 60, and the sleeve 66 is fixedly connected to the drive cylinder and the end cover flange 67 respectively; the end cover flange 67 is sealed and installed at the bottom of the bottom wall of the housing 60 to seal the opening on the bottom wall. In addition, a through hole that penetrates the thickness thereof is provided on the end cover flange 67, and the lower end of the drive shaft 65 extends downward to the outside of the housing 60 through the through hole, and is connected to the connector 62, for example, by screws. By arranging the drive cylinder inside the housing 60, the generation of particles can be further reduced and the cleanliness of the chamber can be improved.

[0051] Moreover, the lifting mechanism 6 also includes a dynamic sealing structure for sealing the gap between the through hole and the drive shaft 65, so as to ensure the sealing inside the housing 60. In this embodiment, the dynamic sealing structure includes a bellows 7, which is located in the housing 60 and is sleeved on the drive shaft 65, and the lower end of the bellows 7 is sealed and connected to the end cover flange 67, and the upper end of the bellows 60 is sealed and connected to the drive shaft 65 through the flange. In this way, the sealing inside the housing 60 can be achieved while ensuring that the drive shaft 65 can move. Of course, in practical applications, other dynamic sealing structures can also be used, such as dynamic sealing rings, magnetic fluid sealing bearings, etc.

[0052] In summary, the lining structure provided by the embodiment of the present invention can reserve enough space between the lower ring part 4 and the cavity 1 to accommodate the inner door 5 by making the upper ring part 3 and the lower ring part 4 of the lining body form a stepped structure, and making the outer diameter of the lower ring part 4 smaller than the inner diameter of the upper ring part 3, so that there is no need to reserve a gap on the side wall of the cavity 1, thereby ensuring its integrity, which is beneficial to process uniformity. At the same time, since the outer diameter of the lower ring part 4 is smaller than the inner diameter of the inner door 5, this can avoid the inner door 5 and the outer peripheral wall of the liner from scratching and generating particles, thereby improving the cleanliness of the chamber environment and improving the product yield. In addition, by making the upper ring part 3 and the lower ring part 4 form a stepped structure, while ensuring that the inner door 5 can be opened and closed by lifting the liner opening 31, the inner diameter of the inner door 5 can be made the same as the inner diameter of the upper ring part 3, that is, the inner wall of the inner door 5 is aligned with the inner wall of the upper ring part 3, thereby ensuring the integrity of the inner wall of the liner, thereby improving the uniformity of the airflow field and improving the process uniformity.

[0053] As another technical solution, the reaction chamber provided in the embodiment of the present invention can not only avoid scratches between the inner door and the liner, but also ensure the integrity of the inner wall of the chamber and the inner wall of the liner, thereby improving the uniformity of the airflow field.

[0054] As another technical solution, a semiconductor processing device provided in an embodiment of the present invention includes a reaction chamber, and the reaction chamber adopts the above-mentioned reaction chamber provided in an embodiment of the present invention.

[0055] The semiconductor processing equipment is, for example, a plasma etching equipment.

[0056] The semiconductor processing equipment provided by the embodiment of the present invention, by adopting the above-mentioned reaction chamber provided by the embodiment of the present invention, can not only avoid scratching between the inner door and the inner liner, but also ensure the integrity of the inner wall of the chamber and the inner wall of the liner, thereby improving the uniformity of the airflow field.

[0057] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A lining structure, characterized in that: include: The liner body comprises an upper ring portion and a lower ring portion forming a stepped structure, wherein the stepped structure is formed by the lower ring portion bending inward from the lower end of the upper ring portion and extending downward, and the outer diameter of the lower ring portion is smaller than the inner diameter of the upper ring portion; and a liner opening for allowing a workpiece to be processed to enter and exit is provided on the upper ring portion, and the liner opening extends to the lower end of the upper ring portion; An inner door is disposed below the upper ring portion, and the inner diameter of the inner door is the same as the inner diameter of the upper ring portion, and the inner door is liftable to open or close the lining opening; The lining opening has a passage penetrating the upper ring portion in the thickness direction of the upper ring portion, and the passage has an opening penetrating downward along the axial direction of the upper ring portion to the lower end of the upper ring portion; The lining structure further comprises a lifting mechanism for driving the inner door to lift and lower, and the lifting mechanism is fixed on the lower electrode mechanism; The lifting mechanism includes: a shell, which is fixedly connected to the lower electrode mechanism; a linear drive source, which is arranged in the shell and is used to provide linear power; a connecting rod assembly, which is respectively connected to the inner door and the linear drive source; and a guide member, which is used to limit the movement of the connecting rod assembly in the vertical direction.

2. The lining structure according to claim 1, characterized in that: Two surfaces of the liner opening and the inner door facing each other form a labyrinth gap capable of blocking the passage of plasma.

3. The lining structure according to claim 2, characterized in that: A convex portion is provided on a surface of the lining opening opposite to the inner door, and an inner diameter of the convex portion is greater than an outer diameter of the inner door.

4. The lining structure according to claim 2, characterized in that: Protrusions and recesses are respectively arranged on two surfaces opposite to each other of the lining opening and the inner door; there are one or more recesses, and the plurality of recesses are arranged at radial intervals along the upper ring portion; the number of the protrusions is the same as the number of the recesses, and when the inner door is in a position to close the lining opening, the protrusions are arranged in respective recesses in a one-to-one correspondence.

5. The lining structure according to claim 1, characterized in that: The connecting rod assembly includes a connecting piece and two connecting rods, which are respectively located on both sides of the shell along the circumference of the lower electrode mechanism, the upper ends of the two connecting rods are connected to the inner door, and the lower ends of the two connecting rods are connected to the linear drive source through the connecting piece; The guide member comprises two guide seats, the two guide seats are arranged on the outer wall of the shell, and a guide hole is vertically arranged on each of the guide seats; the two connecting rods pass through the guide holes on the two guide seats respectively.

6. The lining structure according to claim 5, characterized in that: A through hole penetrating the thickness of the shell is provided at the bottom of the shell; the lower end of the driving shaft of the linear driving source extends to the outside of the shell through the through hole and is connected to the connecting member; The lifting mechanism further includes a dynamic sealing structure for sealing the gap between the through hole and the driving shaft.

7. The lining structure according to claim 6, characterized in that: The dynamic sealing structure includes a bellows, which is located in the shell and sleeved on the drive shaft. The lower end of the bellows is sealed and connected to the bottom of the shell, and the upper end of the bellows is sealed and connected to the drive shaft through a flange.

8. The lining structure according to claim 1, characterized in that: The guide member is made of corrosion-resistant material; or an anti-corrosion layer is provided on the outer surface of the guide member.

9. The lining structure according to claim 1, characterized in that: The lining body further comprises a disc-shaped flow-uniform portion, the outer periphery of which is connected to the lower end of the lower ring portion, and a grid hole portion is arranged in the disc-shaped flow-uniform portion.

10. A reaction chamber, comprising a chamber, a lower electrode mechanism disposed in the chamber, and an inner lining structure disposed around the inner side of the chamber, characterized in that: The lining structure adopts the lining structure according to any one of claims 1 to 9; A cavity opening is arranged on the cavity, and the cavity opening is opposite to the lining opening.

11. A semiconductor processing device, comprising a reaction chamber, characterized in that: The reaction chamber adopts the reaction chamber described in claim 10.

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