Antistatic substrate and silicon microphone using the same

Abstract

The present invention provides an antistatic substrate and a silicon microphone using the antistatic substrate, wherein the antistatic substrate includes an insulating substrate and a sound hole penetrating the insulating substrate, and the substrate further includes: a conductive connection layer, the conductive connection layer is arranged on the side wall of the sound hole; at least two conductive layers are arranged horizontally in the insulating substrate and electrically connected through the conductive connection layer, and on the upper surface of the insulating substrate, the area of ​​the uppermost conductive layer located around the sound hole is exposed to form an electrostatic conduction ring, and on the lower surface of the insulating substrate, a part of the area of ​​the lowermost conductive layer is exposed to form an electrical contact area, and the electrical contact area can be grounded through a conductive device; the static electricity generated around the sound hole can be conducted to the ground through the static conduction ring, the conductive connection layer and the electrical contact area. The advantage of the present invention is that it can quickly eliminate static electricity above the substrate to prevent it from affecting the performance of the device.

Description

Technical Field

[0001] The present invention relates to the field of micro-electromechanical technology, and in particular to an antistatic substrate and a silicon microphone using the antistatic substrate. Background Art

[0002] Existing MEMS (Micro-Electro-Mechanical System) silicon microphones have many advantages such as small size and high signal-to-noise ratio. However, with the widespread application of microelectronics technology and the increasingly complex electromagnetic environment, the electromagnetic field effects of electrostatic discharge, such as electromagnetic interference, have a great impact on the performance of electronic products, and electrostatic discharge may inadvertently break down electronic devices, causing significant losses. In order to reduce the occurrence of this phenomenon, it is necessary to further improve the packaging of existing MEMS silicon microphones. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide an antistatic substrate and a silicon microphone using the antistatic substrate, which can quickly conduct static electricity and prevent static electricity from affecting the performance of the silicon microphone.

[0004] In order to solve the above problems, the present invention provides an antistatic substrate, including an insulating substrate and a sound hole passing through the insulating substrate, the substrate also includes: a conductive connecting layer, the conductive connecting layer is arranged on the side wall of the sound hole; at least two conductive layers are laterally arranged in the insulating substrate and electrically connected through the conductive connecting layer, on the upper surface of the insulating substrate, the area of ​​the uppermost conductive layer located around the sound hole is exposed to form an electrostatic conduction ring, and on the lower surface of the insulating substrate, a part of the area of ​​the lowermost conductive layer is exposed to form an electrical contact area, and the electrical contact area can be grounded through a conductive device; the static electricity generated around the sound hole can be conducted to the ground via the electrostatic conduction ring, the conductive connecting layer and the electrical contact area.

[0005] Furthermore, the insulating substrate includes a main body arranged between the conductive layers, an upper solder resist layer covering the uppermost conductive layer, and a lower solder resist layer covering the lowermost conductive layer. The area of ​​the uppermost conductive layer not covered by the upper solder resist layer forms the electrostatic conduction ring, and the area of ​​the lowermost conductive layer not covered by the lower solder resist layer forms the electrical contact area.

[0006] Furthermore, the electrical contact area is located at the edge of the bottommost conductive layer.

[0007] Furthermore, the electrical contact area is a closed ring.

[0008] Furthermore, the shape of the sound hole is circular or polygonal.

[0009] Furthermore, the antistatic substrate also includes at least one electrical connection channel, which is longitudinally arranged in the insulating matrix. The conductive layer is also electrically connected through the electrical connection channel. The static electricity generated around the sound hole can also be conducted to the ground via the electrostatic conduction ring, the electrical connection channel and the electrical contact area.

[0010] Furthermore, the electrical connection channel is a metal through hole or a metal blind hole.

[0011] Furthermore, the electrical connection channel is arranged between the electrical contact area and the acoustic hole.

[0012] Furthermore, on the upper surface of the insulating substrate, a portion of the uppermost conductive layer is exposed to form a static electricity conduction area.

[0013] Furthermore, the static electricity conduction area is arranged at the corners of the topmost conductive layer.

[0014] Furthermore, the static electricity conduction area is circular or polygonal in shape.

[0015] Furthermore, on the lower surface of the insulating substrate, a portion of the lowermost conductive layer is exposed to form a marking area.

[0016] Furthermore, the identification area is arranged between the electrical contact area and the acoustic hole.

[0017] Furthermore, at least one metal protective layer is provided on the surface of at least one of the conductive connection layer, the electrostatic conduction ring, the electrical contact area, the electrostatic conduction area and the marking area.

[0018] Furthermore, the uppermost metal protection layer is a gold layer.

[0019] The present invention also provides a silicon microphone, which includes: a shell, a side wall of the shell is provided with a conductive layer, the shell is provided with a grounding terminal, and the conductive layer is electrically connected to the grounding terminal; the anti-static substrate as described above, the shell and the anti-static substrate form a cavity, the conductive layer of the side wall of the shell is electrically connected to the electrical contact area of ​​the anti-static substrate to ground the bottommost conductive layer of the anti-static substrate; and an acoustic component, arranged in the cavity.

[0020] Furthermore, the acoustic component includes a MEMS chip, and the MEMS chip is arranged on the antistatic substrate and corresponds to the acoustic hole.

[0021] Furthermore, the acoustic component includes a MEMS chip, and the MEMS chip is arranged on the housing.

[0022] Furthermore, the MEMS chip is arranged on a surface of the housing opposite to the antistatic substrate.

[0023] The advantage of the present invention is that the static electricity generated around the sound hole is conducted to the ground through the static electricity conduction ring, the conductive connection layer and the conductive layer, so that the purpose of quickly eliminating the static electricity can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic top view of a first specific embodiment of an antistatic substrate of the present invention;

[0025] Figure 2 is a bottom view schematic diagram of a first specific embodiment of the antistatic substrate of the present invention;

[0026] Figure 3 is along Figure 1 Sectional view along line AA;

[0027] Figure 4 yes Figure 1 The structure shown is a top view schematic diagram with the upper solder resist layer 102 removed;

[0028] Figure 5 yes Figure 2 The structure shown is a bottom view schematic diagram with the lower solder resist layer 102 removed;

[0029] Figure 6 is a schematic top view of a second specific embodiment of the antistatic substrate of the present invention;

[0030] Figure 7 yes Figure 6 Sectional view along line BB;

[0031] Figure 8 is a top view schematically showing a third specific embodiment of the antistatic substrate of the present invention;

[0032] Fig. 9 is a bottom view schematically showing a fourth specific embodiment of an antistatic substrate of the present invention;

[0033] Fig.10 is a schematic structural diagram of a first specific implementation of a silicon microphone;

[0034] Fig.11 It is a schematic structural diagram of the second specific implementation mode of the silicon microphone. DETAILED DESCRIPTION

[0035] The specific implementation manner of the antistatic substrate provided by the present invention and the silicon microphone using the antistatic substrate will be described in detail below with reference to the accompanying drawings.

[0036] Figure 1 is a top view schematically showing a first specific embodiment of an antistatic substrate of the present invention, Figure 21 is a bottom view schematically showing a first specific embodiment of an antistatic substrate of the present invention, Figure 3 is along Figure 1 For the cross-sectional view of the AA line, please refer to Figure 1 , Figure 2 and Figure 3 The antistatic substrate 1 includes an insulating base 10 and a sound hole 11 penetrating the insulating base 10 .

[0037] When the antistatic substrate 1 is used as a substrate of a silicon microphone, external sound signals are transmitted to the acoustic components inside the silicon microphone through the sound hole 11, and the acoustic components convert the sound signals into electrical signals. In this specific embodiment, the shape of the sound hole 11 is circular. In other specific embodiments of the present invention, the shape of the sound hole 11 can also be a polygon, and the polygon includes but is not limited to a triangle, a quadrilateral, a pentagon, etc., and the polygon can be a regular polygon or an irregular polygon.

[0038] A conductive connection layer 12 is provided on the side wall of the acoustic hole 11. The material forming the conductive connection layer 12 may be metal or other materials with high electrical conductivity. The conductive connection layer 12 may cover all or part of the side wall of the acoustic hole 11. In this specific embodiment, the conductive connection layer 12 covers the entire side wall of the acoustic hole 11.

[0039] The antistatic substrate 1 also includes at least two conductive layers. The conductive layers are transversely arranged in the insulating matrix 10, wherein the transverse arrangement means that the conductive layers extend in a direction parallel to the insulating matrix 10. The material of the conductive layer can be a material with high electrical conductivity, such as metal, and further, the material of the conductive layer is copper. In this specific embodiment, the antistatic substrate 1 includes two conductive layers, namely an upper conductive layer 13 and a lower conductive layer 14, and the upper conductive layer 13 and the lower conductive layer 14 extend in a direction parallel to the insulating matrix 10.

[0040] In this specific embodiment, the insulating substrate 10 includes a body 101 disposed between an upper conductive layer 13 and a lower conductive layer 14, an upper solder resist layer 102 covering the upper conductive layer 13, and a lower solder resist layer 103 covering the lower conductive layer 14. The upper conductive layer 13 and the lower conductive layer 14 are insulated and isolated by the body 101, the upper solder resist layer 102 covers the surface of the upper conductive layer 13, and the lower solder resist layer 103 covers the surface of the lower conductive layer 14.

[0041] The upper conductive layer 13 may fully or partially cover the upper surface of the body 101. In this specific embodiment, the upper conductive layer 13 partially covers the upper surface of the body 101. Figure 4 yes Figure 1 The schematic top view of the structure shown in FIG. 1 with the upper solder resist layer 102 removed is shown in FIG. Figure 2 and Figure 4 , the edge area of ​​the body 101 is not covered by the upper conductive layer 13 , and the edge area of ​​the body 101 is covered by the upper solder resist layer 102 .

[0042] The lower conductive layer 14 may fully or partially cover the body 101. In this specific embodiment, the lower conductive layer 14 fully covers the lower surface of the body 101. Figure 5 yes Figure 2 The bottom view of the structure shown in FIG. 1 is shown with the lower solder resist layer 102 removed. Figure 5 , the lower surface of the body 101 is completely covered by the upper conductive layer 13 .

[0043] Further, in other specific embodiments of the present invention, the antistatic substrate 1 includes more than two conductive layers, and the conductive layers are arranged at intervals in the insulating matrix. Specifically, multiple conductive layers are arranged in parallel in the insulating matrix 10 and insulated and isolated by the body 101.

[0044] The conductive layers are electrically connected via the conductive connecting layer 12. Specifically, in this embodiment, the upper conductive layer 13 and the lower conductive layer 14 are both connected to the conductive connecting layer 12, thereby achieving electrical connection between the upper conductive layer 13 and the lower conductive layer 14. In other embodiments of the present invention, if the antistatic substrate includes more than two conductive layers, all conductive layers can be connected to the conductive connecting layer to achieve electrical connection between the conductive layers. The conductive layer and the conductive connecting layer 12 can be made of the same material or different materials.

[0045] On the upper surface of the insulating substrate 10, the area of ​​the uppermost conductive layer located around the acoustic hole is exposed to form an electrostatic conduction ring, and the other areas are covered. Specifically, in this specific embodiment, the area of ​​the upper conductive layer 13 located around the acoustic hole 11 is not covered by the upper solder resist layer 102, and the uncovered area forms the electrostatic conduction ring 130.

[0046] On the lower surface of the insulating substrate 10, a portion of the lowermost conductive layer is exposed to form an electrical contact area, and the electrical contact area can be grounded through a conductive device. Specifically, in this specific embodiment, on the lower surface of the insulating substrate 10, a portion of the lower conductive layer 14 is not covered by the lower solder resist layer 103, and the area not covered by the lower solder resist layer 103 forms an electrical contact area 140, and the electrical contact area 140 can be grounded through a conductive device. The conductive device can be the conductive layer 20 on the side wall of the silicon microphone housing and the grounding terminal 21 of the silicon microphone (see Fig.10 ).

[0047] Further, the electrical contact area 140 is located at the edge of the lower conductive layer 14, that is, the lower solder resist layer 103 covers the central area of ​​the lower conductive layer 14, but does not cover the edge area of ​​the lower conductive layer 14. The electrical contact area 140 is a closed ring to increase the conductive area of ​​the electrical contact area 140. The closed ring means that the electrical contact area 140 is a closed figure, which is not limited to a circular ring, and can also be other figures such as a square ring.

[0048] Further, in this specific embodiment, at least one metal protective layer (not shown in the drawings) is provided on the surfaces of the conductive connection layer 12, the electrostatic conductive ring 130, and the electrical contact area 140 to protect the surfaces of the conductive connection layer 12, the electrostatic conductive ring 130, and the electrical contact area 140. The metal protective layer may be a conductive layer having different properties from the conductive connection layer 12, the electrostatic conductive ring 130, and the electrical contact area 140. Preferably, the uppermost metal protective layer is a gold layer.

[0049] Furthermore, in this specific embodiment, on the lower surface of the antistatic substrate 1 , around the acoustic hole 11 , the lower conductive layer 14 is also exposed. In other specific embodiments of the present invention, this area may also be covered by the lower solder resist layer 103 .

[0050] The advantage of the antistatic substrate of the present invention is that when static electricity is generated around the sound hole 11, the static electricity is collected by the static electricity conduction ring 130 formed by the upper conductive layer 13 and conducted to the lower conductive layer 14 through the conductive connecting layer 12. In the lower conductive layer 14, the static electricity is conducted to the ground through the electrical contact area 140, thereby achieving the purpose of eliminating static electricity.

[0051] In order to further accelerate the static electricity conduction speed, the present invention also provides a second specific implementation of the antistatic substrate. Figure 6 is a schematic top view of a second specific embodiment of the antistatic substrate of the present invention, Figure 7 yes Figure 6 Sectional view along line BB in Figure 2. Figure 6 and Figure 7The difference between the second specific embodiment and the first specific embodiment is that the antistatic substrate 1 further includes at least one electrical connection channel 15, and the electrical connection channel 15 is longitudinally arranged in the insulating substrate 10. The electrical connection channel 15 can be arranged perpendicular to the insulating substrate 10, or can be arranged at an angle with the insulating substrate 10. In this specific embodiment, the antistatic substrate 1 includes two electrical connection channels 15, and the electrical connection channels 15 are arranged perpendicular to the insulating substrate 10. The electrical connection channel 15 is blocked by the upper solder resist layer 102. Figure 6 The electrical connection channel 15 is illustrated by a dotted line.

[0052] The electrical connection channel 15 is used to electrically connect the conductive layers. Specifically, the electrical connection channel 15 is electrically connected to the upper conductive layer 13 and the lower conductive layer 14 respectively. The static electricity collected by the electrostatic conduction ring 130 is not only conducted to the lower conductive layer 14 via the conductive connection layer 12, but also conducted to the lower conductive layer 14 via the upper conductive layer 13 and the electrical connection channel 15, and then conducted to the ground via the electrical contact area 140.

[0053] Furthermore, the electrical connection channel 15 is a metal through hole or a metal blind hole. The structure of the metal through hole is that a metal layer is formed on the inner wall of a via hole that penetrates the conductive layer and the body 101, and the via hole and the metal layer are the electrical connection channel; the structure of the metal blind hole is that a metal layer is formed on the inner wall of a via hole that penetrates the body 101 but does not penetrate the bottom conductive layer or the top conductive layer, and the via hole and the metal layer are the electrical connection channel. Specifically, in this specific embodiment, please refer to Figure 7 The electrical connection channel 15 is a metal through hole, which penetrates the upper conductive layer 13 and the lower conductive layer 14. Further, in the second specific embodiment, the electrical connection channel 15 is arranged between the electrical contact area 140 and the acoustic hole 11.

[0054] In the second specific embodiment, the upper metal layer 13 and the lower metal layer 14 can be connected not only through the conductive connection layer 12, but also through the electrical connection channel 15. Then, the static electricity collected by the electrostatic conduction ring 130 can be quickly conducted to the ground, thereby improving the conduction capacity of the static electricity and preventing static electricity from affecting the device performance.

[0055] The present invention also provides a third specific embodiment of the antistatic substrate. The third specific embodiment differs from the first specific embodiment in that a static electricity conduction area is provided on the upper surface of the insulating substrate 10 . Figure 8 is a top view of a third specific embodiment of the antistatic substrate of the present invention, please refer to Figure 8In this specific embodiment, on the upper surface of the insulating substrate 10, a partial area of ​​the upper conductive layer 13 is exposed to form an electrostatic conduction area 131. Among them, the electrostatic conduction area 131 can be one area, and can also be composed of multiple areas. In the summary of this specific embodiment, the electrostatic conduction area 131 is one area. Furthermore, the electrostatic conduction area 131 is arranged at the corners of the upper conductive layer 13. The shape of the electrostatic conduction area 131 is circular or polygonal. In this specific embodiment, the shape of the electrostatic conduction area 131 is triangular.

[0056] Furthermore, the static electricity conduction area 131 is covered with at least one metal protection layer 132 to protect the upper conductive layer exposed in the marking area 131. The uppermost metal protection layer 132 is preferably a gold layer.

[0057] In the third specific embodiment, the purpose of setting an electrostatic conduction area in other parts of the antistatic substrate to expose the upper conductive layer is: first, the static electricity above the antistatic substrate can not only be collected by the electrostatic conduction ring 130, but also by the electrostatic conduction area 131, so as to further enable the electrostatic charge to be quickly conducted to prevent static electricity from damaging the device; second, it can achieve a marking effect, facilitate machine automation identification and personnel identification in large-scale production, play a fool-proof role, and reduce the occurrence of abnormalities in the production process.

[0058] The present invention also provides a fourth specific embodiment of the antistatic substrate. The fourth specific embodiment differs from the first specific embodiment in that a marking area is provided on the lower surface of the insulating substrate 10 . Fig. 9 is a bottom view of a fourth specific embodiment of the antistatic substrate of the present invention, please refer to Fig. 9 , on the lower surface of the insulating substrate 10, a partial area of ​​the lower conductive layer 14 is exposed to form an identification area 141. The identification area 141 may be one area or may be composed of multiple areas. In this specific embodiment, the identification area 141 is composed of multiple areas. Further, the identification area 141 is arranged between the electrical contact area 140 and the acoustic hole 11. For example, in this specific embodiment, multiple areas are arranged around the acoustic hole 11. The identification area 141 is covered with at least one metal protective layer 142 to protect the lower conductive layer exposed at the identification area 141. The topmost metal protective layer 142 is preferably a gold layer.

[0059] In the fourth specific embodiment, in addition to the acoustic hole 11, the identification area 141 is also provided on the lower surface of the antistatic substrate. The identification area 141 can realize automatic recognition of the machine, especially for the structure of directly mounting the MEMS chip at the acoustic hole, which can be accurately aligned.

[0060] The invention also provides a silicon microphone. Fig.10 is a schematic diagram of the structure of the first specific implementation of the silicon microphone. Fig.10 The silicon microphone comprises an antistatic substrate 1, a housing 2 and an acoustic component. The antistatic substrate 1 has the same structure as the above-mentioned antistatic substrate.

[0061] The side wall of the shell 2 is provided with a conductive layer 20, and the side or bottom surface of the shell 2 is provided with a ground terminal 21, and the conductive layer 20 is electrically connected to the ground terminal 21. In this specific embodiment, the conductive layer 20 is provided on the inner side wall surface of the shell 2, and the ground terminal 21 is provided on the bottom surface of the shell 2.

[0062] The housing 2 and the antistatic substrate 1 form a cavity 4. The conductive layer 20 of the side wall of the housing 2 is welded to the electrical contact area 140 of the antistatic substrate 1, and the static electricity conducted by the antistatic substrate 1 is conducted to the ground terminal 21 through the conductive layer 20, thereby achieving rapid conduction of static electricity to prevent static electricity from affecting the performance of the silicon microphone.

[0063] The acoustic component is arranged in the cavity 4, and is used to convert the sound signal transmitted into the cavity 4 through the sound hole 11 into an electrical signal. The acoustic component includes a MEMS chip 3. In this specific embodiment, the MEMS chip 3 is arranged on the antistatic substrate 1, and the MEMS chip 3 is directly opposite to the sound hole 11 to form a front chamber. The sound signal conducted by the sound hole 11 is directly transmitted to the MEMS chip 3. In the second specific embodiment of the silicon microphone of the present invention, please refer to Fig.11 , which is a schematic diagram of the structure of the second specific embodiment of the silicon microphone, the MEMS chip 3 is arranged on the housing 2. In the second specific embodiment, the MEMS chip 3 is arranged on the surface of the housing 2 opposite to the antistatic substrate 1. In other specific embodiments, the MEMS chip 3 can also be arranged on the surface of the housing 2 adjacent to the antistatic substrate 1, that is, the side of the housing 2.

[0064] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. An antistatic substrate, comprising an insulating substrate and an acoustic hole penetrating the insulating substrate, characterized in that: The substrate further comprises: A conductive connection layer, the conductive connection layer is arranged on the side wall of the sound hole; At least two conductive layers are arranged laterally in the insulating substrate and are electrically connected through the conductive connecting layer. On the upper surface of the insulating substrate, the area of ​​the uppermost conductive layer around the acoustic hole is exposed to form an electrostatic conduction ring. On the lower surface of the insulating substrate, a part of the area of ​​the lowermost conductive layer is exposed to form an electrical contact area. The electrical contact area can be grounded through a conductive device. The static electricity generated around the acoustic hole can be conducted to the ground through the static electricity conducting ring, the conductive connecting layer and the electrical contact area; The insulating substrate comprises a body arranged between the conductive layers, and an upper solder resist layer covering the uppermost conductive layer, wherein the uppermost conductive layer is located in an area around the acoustic hole that is not covered by the upper solder resist layer to form the electrostatic conductive ring; At least one metal protection layer is disposed on the surface of at least one of the conductive connection layer, the electrostatic conductive ring and the electrical contact area.

2. The antistatic substrate according to claim 1, characterized in that: The insulating substrate further includes a lower solder resist layer covering the lowermost conductive layer, and a region of the lowermost conductive layer not covered by the lower solder resist layer forms the electrical contact region.

3. The antistatic substrate according to claim 1, characterized in that: The electrical contact region is located at an edge of the lowermost conductive layer.

4. The antistatic substrate according to claim 3, characterized in that: The electrical contact area is in the shape of a closed ring.

5. The antistatic substrate according to claim 1, characterized in that: The shape of the sound hole is circular or polygonal.

6. The antistatic substrate according to claim 1, characterized in that: The antistatic substrate also includes at least one electrical connection channel, which is longitudinally arranged in the insulating matrix. The conductive layer is also electrically connected through the electrical connection channel. The static electricity generated around the sound hole can also be conducted to the ground through the electrostatic conduction ring, the electrical connection channel and the electrical contact area.

7. The antistatic substrate according to claim 6, characterized in that: The electrical connection channel is a metal through hole or a metal blind hole.

8. The antistatic substrate according to claim 6, characterized in that: The electrical connection channel is disposed between the electrical contact area and the acoustic hole.

9. The antistatic substrate according to claim 1, characterized in that: On the upper surface of the insulating substrate, a portion of the uppermost conductive layer is exposed to form a static electricity conduction area.

10. The antistatic substrate according to claim 9, characterized in that: The static electricity conduction area is arranged at the corners of the uppermost conductive layer.

11. The antistatic substrate according to claim 9, characterized in that: The shape of the static electricity conduction area is circular or polygonal.

12. The antistatic substrate according to claim 9, characterized in that: There is at least one metal protective layer on the surface of the static electricity conduction area.

13. The antistatic substrate according to claim 1, characterized in that: On the lower surface of the insulating substrate, a portion of the lowermost conductive layer is exposed to form a marking area.

14. The antistatic substrate according to claim 13, characterized in that: The identification area is disposed between the electrical contact area and the acoustic hole.

15. The antistatic substrate according to claim 13, characterized in that: The surface of the marking area is provided with at least one metal protection layer.

16. The antistatic substrate according to claim 15, characterized in that: The top metal protective layer is a gold layer.

17. A silicon microphone, characterized in that: include: A housing, a side wall of which is provided with a conductive layer, the housing is provided with a ground terminal, and the conductive layer is electrically connected to the ground terminal; The antistatic substrate according to any one of claims 1 to 16, wherein the housing and the antistatic substrate form a cavity, and the conductive layer of the side wall of the housing is electrically connected to the electrical contact area of ​​the antistatic substrate to ground the bottommost conductive layer of the antistatic substrate; The acoustic component is arranged in the cavity.

18. The silicon microphone according to claim 17, characterized in that The acoustic component comprises a MEMS chip, and the MEMS chip is arranged on the antistatic substrate and corresponding to the acoustic hole.

19. The silicon microphone according to claim 17, characterized in that The acoustic component includes a MEMS chip, and the MEMS chip is arranged on the housing.

20. The silicon microphone according to claim 19, characterized in that The MEMS chip is arranged on a surface of the housing opposite to the antistatic substrate.

Images