Display panel and method for manufacturing the same, transparent OLED substrate, and array substrate

Abstract

The present application provides a display panel, a manufacturing method thereof, a transparent OLED substrate, and an array substrate. The display panel has a first display area and a second display area. A photosensitive element can be disposed below the first display area. The display panel includes a substrate, a driving circuit layer, a light-emitting functional film layer, and a conductive layer located in the first display area and the second display area. The driving circuit layer is formed on the substrate. The light-emitting functional film layer is formed on the driving circuit layer. The conductive layer is formed on the light-emitting functional film layer, and the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area.

Description

Technical Field

[0001] The present application relates to the field of display technologies, and in particular, to a display panel, a method for manufacturing the same, a transparent OLED substrate, and an array substrate. Background Art

[0002] With the rapid development of electronic devices, users have higher and higher requirements for the screen-to-body ratio, which makes the full-screen display of electronic devices receive more and more attention in the industry. For traditional electronic devices such as mobile phones and tablet computers, since components such as a front camera, a receiver, and an infrared sensing element need to be integrated, a notch can be formed in the display screen, and a camera, a receiver, and an infrared sensing element can be arranged in the notched area. However, the notched area cannot be used to display images. For example, in the existing technology, a notch screen is used, or a hole is formed in the screen. For an electronic device with a camera function, external light can enter a photosensitive element located below the screen through the hole in the screen. However, none of these electronic devices is a true full-screen display, and images cannot be displayed in all areas of the entire screen. For example, images cannot be displayed in the camera area. Summary of the Invention

[0003] According to a first aspect of an embodiment of the present application, a display panel is provided. The display panel has a first display area and a second display area. A photosensitive element can be arranged below the first display area. The display panel includes a substrate, a driving circuit layer, a light-emitting functional film layer, and a conductive layer located in the first display area and the second display area;

[0004] The driving circuit layer is formed on the substrate;

[0005] The light-emitting functional film layer is formed on the driving circuit layer;

[0006] The conductive layer is formed on the light-emitting functional film layer, and the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area.

[0007] In one embodiment, the material of the conductive layer in the first display area is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver, or the material of the conductive layer in the first display area includes at least one of Mg and Ag; such a setting can further improve the transparency of the first display area.

[0008] Preferably, the mass ratio range of Mg to Ag is 1:4 to 1:20;

[0009] Preferably, the conductive layer is a cathode layer;

[0010] Preferably, the light-emitting functional film layer includes an organic light-emitting material and an electron injection layer located between the organic light-emitting material and the conductive layer. The material of the electron injection layer includes Ag and at least one of Mg, K, Li, and Cs;

[0011] Preferably, the proportion range of the mass of Ag in the electron injection layer to the total mass of the electron injection layer is 1:5 to 1:21.

[0012] In one embodiment, the ratio range of the thickness of the conductive layer in the first display area to the thickness of the conductive layer in the second display area is 0.25:1 to 0.85:1;

[0013] Preferably, the thickness range of the conductive layer in the first display area is 5 to 10 nm, and the thickness range of the conductive layer in the second display area is 12 to 20 nm. With such a setting, good light transmittance of the first sub-conductive layer can be ensured, and at the same time, good electrical conductivity and mechanical properties of the conductive layer can be ensured, ensuring that the display panel can work normally.

[0014] In one embodiment, the substrate includes a first substrate and a second substrate. The first substrate is located in the first display area, and the second substrate is located in the second display area. The light transmittance of the first substrate is greater than that of the second substrate; since the light transmittance of the first substrate is greater than that of the second substrate, the light transmittance of the first display area can be further improved.

[0015] Preferably, the second substrate is a stack of multiple organic material layers and multiple inorganic material layers overlapping; the first substrate at least includes a transparent material layer, and the thickness of the first substrate is the same as that of the second substrate; when the thickness of the first substrate is the same as that of the second substrate, it is beneficial to set the whole display panel to the same thickness, making the whole display panel more beautiful.

[0016] Preferably, the first substrate further includes a stack of overlapping organic material layers and inorganic material layers, and the stack of the first substrate shares a part of the film layer material with the stack of the second substrate; when the stack of the first substrate shares a part of the film layer material with the stack of the second substrate, the layer where the first substrate and the second substrate share the film layer material can be formed in the same process step, thereby simplifying the preparation process flow of the first substrate and the second substrate.

[0017] Preferably, the stack of the first substrate includes a first organic layer and a first inorganic layer located on the first organic layer. The stack of the second substrate includes a second organic layer, a second inorganic layer, a third organic layer, and a third inorganic layer that are stacked in sequence from bottom to top. The first organic layer shares the same film material with a part of the third organic layer, and the first inorganic layer shares the same film material with the third inorganic layer. The thickness of the first organic layer is less than that of the third organic layer, and the thickness of the first inorganic layer is equal to that of the third inorganic layer;

[0018] Preferably, the transparent material layer of the first substrate is disposed below the stack of the first substrate, and the lower end surface of the transparent material layer of the first substrate is flush with the lower end surface of the second substrate;

[0019] Preferably, the light transmittance of the transparent material layer of the first substrate is greater than 90%;

[0020] Preferably, the material of the transparent material layer of the first substrate includes at least one of PET and PC; the light transmittances of PET and PC are both greater than 90%, which can make the light transmittance of the first substrate relatively high.

[0021] Preferably, the light transmittance of the second substrate is within 30%-60%. Such a setting can reduce the light transmittance of the second display area and improve the brightness of the second display area during display.

[0022] In one embodiment, a protective layer is disposed below the first substrate, below the second substrate, between the side surface of the transparent material layer of the first substrate and the second substrate, and / or between the upper end of the transparent material layer of the first substrate and the stack of the first substrate; the protective layer can protect the first substrate and the second substrate, improve the mechanical strength of the display panel, and thus improve the service life of the display panel.

[0023] Preferably, the material of the protective layer includes at least one of IZO, ITO, SiNx, and SiOx. The above materials can make the light transmittance of the protective layer relatively high and avoid the influence of the setting of the protective layer on the light transmittance of the first display area.

[0024] In one embodiment, the driving circuit layer of the first display area includes an anode layer; when the driving circuit layer of the first display area only includes an anode layer, the structure of the driving circuit layer of the first display area is simplified, and the transparency of the driving circuit layer of the first display area can be improved.

[0025] Preferably, the driving circuit layer of the first display area includes an anode layer and a transparent organic material film layer disposed under the anode layer; the transparent organic material film layer disposed on the anode layer can increase the thickness of the driving circuit layer of the first display area, so that the thickness of the driving circuit layer of the first display area is the same as that of the driving circuit layer of the second display area.

[0026] Preferably, the driving circuit layer of the second display area includes multiple insulating layers, and the thickness of the transparent organic material film layer is the same as the total thickness of the multiple insulating layers of the second display area. In this way, the thickness of the part of the driving circuit layer located in the first display area is the same as that of the part located in the second display area, which is beneficial to making the overall thickness of the display panel substantially the same, thereby improving the aesthetics of the display panel.

[0027] In one embodiment, the first display area and the second display area are AMOLED display areas;

[0028] Preferably, the driving circuit layer located in the first display area includes multiple first driving circuit units, and each first driving circuit unit includes a transistor and a storage capacitor; the driving circuit layer located in the second display area includes multiple second driving circuit units, and each second driving circuit unit includes a storage capacitor and a transistor, and the number of transistors in the first driving circuit unit is less than that in the second driving circuit unit; with such a setting, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer in the part of the driving circuit layer located in the first display area is smaller, and thus the light transmittance of the first display area can be improved.

[0029] Preferably, the transistor of the first driving circuit unit includes a first transistor, and the storage capacitor of the first driving circuit unit includes a first electrode plate and a second electrode plate; the first driving circuit unit has a first conductive layer, and a part of the first conductive layer serves as the first electrode plate, and another part serves as the gate of the first transistor; with such a setting, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the manufacturing process flow of the first driving circuit unit. Among them, the first electrode plate can be the lower electrode plate of the storage capacitor, and the second electrode plate can be the upper electrode plate of the storage capacitor.

[0030] Preferably, the driving circuit layer located in the first display area further includes a power supply line, a data line, a scanning line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer in the first display area further has a second conductive layer, a part of the second conductive layer serves as the second electrode plate, and another part serves as the power supply line; the transistor of the first driving circuit unit further includes a second transistor. The source electrode of the first transistor is connected to the second conductive layer, the drain electrode of the first transistor is connected to the corresponding anode layer, the gate electrode of the second transistor is connected to the scanning line, the drain electrode of the second transistor is respectively connected to the first conductive layer, and the source electrode of the second transistor is connected to the data line. With such an arrangement, when the power supply line, the second electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between them after the power supply line and the second electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0031] Preferably, the materials of the first transistor, the second transistor, the storage capacitor, the data line, the scanning line, and the anode layer are made of transparent materials. In this way, the light transmittance of the driving circuit layer in the first display area can be relatively high, and further the light transmittance of the first display area can be increased.

[0032] Preferably, the transparency of the transparent material is greater than or equal to 90%.

[0033] Preferably, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

[0034] Preferably, the driving circuit layer located in the first display area further includes a power supply line, a data line, a first scanning line, a second scanning line, a reference potential line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer in the first display area further has a third conductive layer, a part of the third conductive layer serves as the second electrode plate, and another part serves as the corresponding anode layer; the transistor of the first driving circuit unit further includes a third transistor and a fourth transistor. The source electrode of the third transistor is connected to the data line, the gate electrode of the third transistor is connected to the first scanning line, the drain electrode of the third transistor is connected to the first conductive layer, the drain electrode of the first transistor is connected to the power supply line, the source electrode of the first transistor is connected to the third conductive layer, the gate electrode of the fourth transistor is connected to the second scanning line, the source electrode of the fourth transistor is connected to the reference potential line, and the drain electrode of the fourth transistor is connected to the third conductive layer. With such an arrangement, when the anode layer, the second electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between them after the anode layer and the second electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0035] Preferably, the first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scan line, the second scan line, the reference potential line, and the anode layer are made of a transparent material; thus, the light transmittance of the driving circuit layer in the first display area can be made relatively high, and further the light transmittance of the first display area can be increased.

[0036] Preferably, the transparency of the transparent material is greater than or equal to 90%;

[0037] Preferably, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

[0038] According to a second aspect of the embodiments of the present application, a display device is provided, including:

[0039] A device body having a device area;

[0040] The above-mentioned display panel covering the device body;

[0041] Wherein, the device area is located below the first display area, and a photosensitive element for collecting light through the first display area is provided in the device area.

[0042] In the above-mentioned display device, since the thickness of the conductive layer in the first display area of the included display panel is less than the thickness of the conductive layer in the second display area, the light transmittance of the first display area can be made greater than the light transmittance of the second display area, so that the photosensitive element provided below the first display area can receive sufficient light, ensuring the normal operation of the photosensitive element.

[0043] In one embodiment, the photosensitive element includes a camera and / or a light sensor.

[0044] According to a third aspect of the embodiments of the present application, a method for manufacturing a display panel is provided. The display panel has a first display area and a second display area, and the manufacturing method includes:

[0045] Forming a substrate;

[0046] Forming a driving circuit layer on the substrate;

[0047] Forming a light-emitting functional film layer on the driving circuit layer;

[0048] Forming a conductive layer on the light-emitting functional film layer. The thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area, and the conductive layer in the first display area and a part of the conductive layer in the second display area are formed simultaneously.

[0049] In one embodiment, forming a conductive layer on the light-emitting functional film layer includes:

[0050] Forming a first conductive film layer on the light-emitting functional film layer, the first conductive film layer covering the first display area and the second display area;

[0051] Forming a second conductive film layer on the first conductive film layer, the second conductive film layer being disposed only in the second display area; or,

[0052] Forming a conductive layer on the light-emitting functional film layer includes:

[0053] Forming a third conductive film layer on the light-emitting functional film layer located in the second display area;

[0054] Forming a fourth conductive film layer on the light-emitting functional film layer in the first display area and on the third conductive film layer in the second display area.

[0055] In one embodiment, forming the substrate includes:

[0056] Forming a substrate layer;

[0057] Forming a groove at a position corresponding to the first display area on the substrate layer;

[0058] Filling a transparent material layer in the groove;

[0059] Preferably, forming the substrate layer includes: forming a stack in which an organic material layer and an inorganic material layer overlap;

[0060] Preferably, before forming the transparent material layer in the groove, it further includes: forming a protective layer on the inner surface of the groove and below the substrate layer;

[0061] Preferably, after forming the transparent material layer in the groove, it further includes: forming a protective layer below the transparent material layer and the substrate layer.

[0062] According to a fourth aspect of the embodiments of the present application, a transparent OLED substrate is provided, and the transparent OLED substrate includes:

[0063] A substrate;

[0064] A driving circuit layer formed on the substrate;

[0065] A light-emitting functional film layer formed on the driving circuit layer;

[0066] Among them, the driving circuit layer includes a plurality of first driving circuit units. Each first driving circuit unit includes a storage capacitor and a first transistor. The storage capacitor includes a first electrode plate and a second electrode plate. The first driving circuit unit has a first conductive layer, a part of which serves as the first electrode plate and another part serves as the gate of the first transistor. With such an arrangement, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between them after the gate of the first transistor and the first electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit. Among them, the first electrode plate can be the upper electrode plate of the storage capacitor, and the second electrode plate can be the lower electrode plate of the storage capacitor.

[0067] In one embodiment, the driving circuit layer further includes a power line, a data line, a scanning line, and an anode layer corresponding to each of the plurality of first driving circuit units one by one. The driving circuit layer further has a second conductive layer, a part of which serves as the second electrode plate and another part serves as the power line. The first driving circuit unit further includes a second transistor. The source of the first transistor is connected to the second conductive layer, the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scanning line, the drain of the second transistor is respectively connected to the first conductive layer, and the source of the second transistor is connected to the data line. With such an arrangement, when the power line, the second electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between them after the power line and the second electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0068] Preferably, the first transistor, the second transistor, the storage capacitor, the data line, the scanning line, and the anode layer are made of a transparent material. In this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be relatively high, and further the light transmittance of the transparent OLED substrate can be increased.

[0069] Preferably, the transparency of the transparent material is greater than or equal to 90%.

[0070] Preferably, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

[0071] In one embodiment, the driving circuit layer further includes a power line, a data line, a first scanning line, a second scanning line, a reference potential line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer further has a third conductive layer, a part of the third conductive layer serves as the second electrode plate, and another part serves as the corresponding anode layer. The first driving circuit unit further includes a third transistor and a fourth transistor. The source electrode of the third transistor is connected to the data line, the gate electrode of the third transistor is connected to the first scanning line, the drain electrode of the third transistor is connected to the first conductive layer, the drain electrode of the first transistor is connected to the power line, the source electrode of the first transistor is connected to the third conductive layer, the gate electrode of the fourth transistor is connected to the second scanning line, the source electrode of the fourth transistor is connected to the reference potential line, and the drain electrode of the fourth transistor is connected to the third conductive layer. With such a setting, when the anode layer, the second electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between them after the anode layer and the second electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0072] Preferably, the first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scanning line, the second scanning line, the reference potential line, and the anode layer are made of a transparent material. In this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be relatively high, and further the light transmittance of the transparent OLED substrate can be increased.

[0073] Preferably, the transparency of the transparent material is greater than or equal to 90%.

[0074] Preferably, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

[0075] According to the fifth aspect of the embodiments of the present application, a transparent display panel is provided. The transparent display panel includes the above-mentioned transparent OLED substrate and a first encapsulation layer, and the first encapsulation layer is disposed on a side of the transparent OLED substrate away from the substrate.

[0076] For the above-mentioned transparent display panel, since a part of the first conductive layer of its transparent OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate electrode of the first transistor, when the gate electrode of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between them after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0077] According to a sixth aspect of an embodiment of the present application, an array substrate is provided. The array substrate includes a first OLED substrate and a second OLED substrate. The first OLED substrate includes the above-mentioned transparent OLED substrate, and the second OLED substrate is a non-transparent OLED substrate;

[0078] The first OLED substrate and the second OLED substrate share the same substrate, and the light-emitting functional film layers of the first OLED substrate and the second OLED substrate are formed in the same process.

[0079] For the above-mentioned array substrate, since a part of the first conductive layer of the first OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the preparation process flow of the first driving circuit unit.

[0080] In one embodiment, at least a part of the first OLED substrate is surrounded by the second OLED substrate;

[0081] Preferably, the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit unit is greater than the number of transistors included in the first driving circuit unit. With such a setting, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer of the driving circuit layer of the first OLED substrate is smaller, thereby improving the light transmittance of the first OLED substrate.

[0082] According to a seventh aspect of an embodiment of the present application, a display screen is provided. The display screen includes the above-mentioned array substrate and a second encapsulation structure. The second encapsulation structure is disposed on the array substrate, and a photosensitive element can be disposed below the first OLED substrate of the array substrate.

[0083] For the above-mentioned display screen, since a part of the first conductive layer of the first OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the preparation process flow of the first driving circuit unit, and further simplify the preparation process flow of the driving circuit layer of the first OLED substrate.

[0084] According to an eighth aspect of an embodiment of the present application, a display device is provided. The display device includes:

[0085] The device body has a device area;

[0086] The above display screen covers the device body;

[0087] Wherein, the device area is located below the first OLED substrate, and a photosensitive element for collecting light through the first OLED substrate is arranged in the device area.

[0088] Preferably, the photosensitive element includes a camera and / or a light sensor.

[0089] In the display panel, the display device, and the preparation method thereof provided by the embodiments of the present application, since the thickness of the conductive layer in the first display area of the display panel is less than the thickness of the conductive layer in the second display area, the light transmittance of the first display area can be made greater than that of the second display area, so that the photosensitive element arranged below the first display area can receive sufficient light, ensuring the normal operation of the photosensitive element;

[0090] In the transparent OLED substrate, the transparent display panel, the array substrate, the display screen, and the display device provided by the embodiments of the present application, since a part of the first conductive layer of the transparent OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the preparation process flow of the first driving circuit unit, and further simplify the preparation process flow of the transparent OLED substrate, the transparent display panel, the array substrate, the display screen, and the display device. Description of the Drawings

[0091] Figure 1 is a top view of the display panel provided by the embodiments of the present application;

[0092] Figure 2 is Figure 1 a cross-sectional view of the display panel shown in [Figure number] taken along CC';

[0093] Figure 3 is Figure 1 a partial cross-sectional view of a display panel shown in [Figure number] taken along CC';

[0094] Figure 4 is Figure 1 a cross-sectional view of the substrate of the display panel shown in [Figure number];

[0095] Figure 5 is Figure 1 a partial cross-sectional view of another display panel shown in [Figure number] taken along CC';

[0096] Figure 6 A cross-sectional view of a first display area of a display panel provided by an embodiment of the present application;

[0097] Figure 7 A circuit diagram of a first driving circuit unit provided by an embodiment of the present application;

[0098] Figure 8 A cross-sectional view of a first display area of another display panel provided by an embodiment of the present application;

[0099] Figure 9 A circuit diagram of another first driving circuit unit provided by an embodiment of the present application;

[0100] Figure 10 A side view of a display device provided by an embodiment of the present application;

[0101] Figure 11 is Figure 10 A schematic structural diagram of the device body of the display device shown;

[0102] Figure 12 A schematic structural diagram of a substrate layer provided by an embodiment of the present application;

[0103] Figure 13 A schematic structural diagram of a first intermediate structure provided by an embodiment of the present application;

[0104] Figure 14 A schematic structural diagram of a second intermediate structure provided by an embodiment of the present application;

[0105] Figure 15 A schematic structural diagram of a third intermediate structure provided by an embodiment of the present application;

[0106] Figure 16 A schematic structural diagram of a fourth intermediate structure provided by an embodiment of the present application;

[0107] Figure 17 A schematic structural diagram of a fifth intermediate structure provided by an embodiment of the present application;

[0108] Figure 18 A schematic structural diagram of a sixth intermediate structure provided by an embodiment of the present application;

[0109] Figure 19 A schematic structural diagram of a seventh intermediate structure provided by an embodiment of the present application;

[0110] Figure 20 A schematic structural diagram of a transparent OLED substrate provided by an embodiment of the present application;

[0111] Figure 21 A cross-sectional view of a transparent OLED substrate provided by an embodiment of the present application;

[0112] Figure 22 It is a cross-sectional view of another transparent OLED substrate provided by an embodiment of the present application. Detailed implementation manners

[0113] Here, exemplary embodiments will be described in detail, and examples thereof are shown in the drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present application. On the contrary, they are merely examples of devices consistent with some aspects of the present application as detailed in the appended claims.

[0114] Next, with reference to the drawings, the display panel and its manufacturing method in the embodiments of the present application will be described in detail. Without conflict, the features in the following embodiments and implementation manners can be supplemented or combined with each other.

[0115] On intelligent electronic devices such as mobile phones and tablet computers, since it is necessary to integrate photosensitive elements such as front cameras and light sensors, in order to achieve a full-screen display, the photosensitive elements can be arranged on the backlight surface of the display panel of the electronic device. Generally, the light transmittance of existing display panels is relatively low, and the photosensitive elements arranged on the backlight surface of the display panel are difficult to receive sufficient light, resulting in the photosensitive elements being unable to work properly. For example, the camera arranged on the backlight surface of the display panel collects less light, and the quality of the captured images is poor.

[0116] After research by the inventors, it is found that the reason for this problem is that the thickness of the film layer of the display panel is large, resulting in low light transmittance.

[0117] To solve the above problems, an embodiment of the present application provides a display panel. Figure 1 It is a top view of the display panel provided by an embodiment of the present application. Figure 2 is Figure 1 a cross-sectional view of the display panel shown along CC'. As Figure 1 and Figure 2 shown, the display panel 100 has a first display area A and a second display area B, and photosensitive elements can be arranged below the first display area A. The display panel 100 includes a substrate 1, a driving circuit layer 2, a light-emitting functional film layer 3, and a conductive layer 4 located in the first display area A and the second display area B. The driving circuit layer 2 is formed on the substrate 1, the light-emitting functional film layer 3 is formed on the driving circuit layer 2, the conductive layer 4 is formed on the light-emitting functional film layer 3, and the thickness d1 of the conductive layer in the first display area A is less than the thickness d2 of the conductive layer in the second display area B.

[0118] In the embodiment of the present application, for the convenience of description, the direction from the substrate 1 to the driving circuit layer 2 is defined as up, and the direction from the driving circuit layer 2 to the substrate 1 is defined as down, so as to determine the up and down directions. It is easy to understand that different direction definition methods will not affect the actual operation content of the process and the actual form of the product.

[0119] In the display panel 100 provided by the embodiment of the present application, since the thickness of the conductive layer in the first display area A is smaller than the thickness of the conductive layer in the second display area B, the light transmittance of the first display area A can be made greater than the light transmittance of the second display area B, so that the photosensitive element disposed below the first display area A can receive sufficient light, ensuring that the photosensitive element can work normally.

[0120] The second display area B may at least partially surround the first display area A. Figure 1 In the shown display panel 100, the second display area B completely surrounds the first display area A. In other embodiments, the second display area B may partially surround the first display area A. The second display area B is the main display area of the display panel 100, usually occupying more than 90% of the area of the display panel. Below the first display area A, photosensitive devices such as cameras and light sensors can usually be disposed.

[0121] In one embodiment, refer to Figure 3 , the part of the conductive layer 4 in the first display area A is the first sub-conductive layer 41, and the part of the conductive layer 4 in the second display area includes the second sub-conductive layer 42 and the third sub-conductive layer 43 on the second sub-conductive layer 42.

[0122] Among them, the material of the first sub-conductive layer 41 is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver; or the material of the first sub-conductive layer 41 includes at least one of Mg and Ag. Preferably, the first sub-conductive layer 41 includes two materials of Mg and Ag, and the mass ratio range of Mg to Ag is 1:4 to 1:20. With such a setting, the light transmittance of the first display area A can be ensured to be relatively large, so that the sensor disposed below the first display area A can receive more light.

[0123] One of the second sub-conductive layer 42 and the third sub-conductive layer 43 may have the same material as the first sub-conductive layer 41 and be formed in the same process step. When the second sub-conductive layer 42 and the first sub-conductive layer 41 are formed simultaneously, when forming the conductive layer 4, first, the second sub-conductive layer 42 and the first sub-conductive layer 41 are formed simultaneously, and then the third sub-conductive layer 43 is formed on the second sub-conductive layer 42. The second sub-conductive layer 42 and the first sub-conductive layer 41 have the same material, and the material of the third sub-conductive layer 43 may include at least one of Mg and Ag. When the third sub-conductive layer 43 and the first sub-conductive layer 41 are formed simultaneously, when forming the conductive layer 4, first, the second sub-conductive layer 42 is formed, and then the first sub-conductive layer 41 and the third sub-conductive layer 43 are formed simultaneously. The first sub-conductive layer 41 and the third sub-conductive layer 43 have the same material, and the material of the second sub-conductive layer 42 may include at least one of Mg and Ag.

[0124] In one embodiment, the conductive layer 4 may be a cathode layer. Among them, the cathode layer may be a surface electrode covering the entire area of the display panel 100. That is, the first sub-conductive layer 41 covers the first display area A, and the second sub-conductive layer 42 and the third sub-conductive layer 43 cover the second display area B.

[0125] In one embodiment, the ratio range of the thickness of the first sub-conductive layer 41 located in the first display area A to the thickness of the conductive layer (that is, the total thickness of the second sub-conductive layer 42 and the third sub-conductive layer 43) located in the second display area B may be 0.25:1 to 0.85:1, for example, 0.3, 0.5, 0.7, 0.85, etc. Among them, in the embodiments of the present application, the thickness refers to the size of the film layer in the up and down directions.

[0126] Further, the thickness range of the first sub-conductive layer 41 located in the first display area A may be 5 to 10 nm, and the total thickness range of the second sub-conductive layer 42 and the third sub-conductive layer 43 located in the second display area B may be 12 to 20 nm. With such a setting, it can ensure that the light transmittance of the first sub-conductive layer 41 is good, and at the same time, ensure that the conductive layer 4 has good electrical conductivity and mechanical properties, ensuring that the display panel 100 can work normally.

[0127] In one embodiment, the light-emitting functional film layer 3 may include an organic light-emitting material and a common layer. Among them, the common layer may include an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. The electron injection layer and the electron transport layer are located between the organic light-emitting material and the conductive layer 4, and the hole injection layer and the hole transport layer are located between the driving circuit layer 2 and the light-emitting functional film layer 3. Among them, the electron injection layer, the electron transport layer, the hole injection layer, and the hole transport layer are all provided as a whole layer, covering the first display area A and the second display area B.

[0128] Further, the material of the electron injection layer includes Ag and at least one of Mg, K, Li, and Cs. Preferably, the ratio of the mass of Ag in the electron injection layer to the total mass of the electron injection layer ranges from 1:5 to 1:21, that is, the ratio of the mass of Ag in the electron injection layer to the mass of other components ranges from 1:4 to 1:20.

[0129] The display panel 100 may further include a pixel defining layer 7 disposed on the same layer as the light-emitting functional film layer 3. Pixel openings may be formed in the pixel defining layer 7, and the organic light-emitting material of the light-emitting functional film layer 3 is disposed in the pixel openings.

[0130] In one embodiment, referring again to Figure 1 , the substrate 1 may include a first substrate 11 and a second substrate 12. The first substrate 12 is located in the first display area A, and the second substrate 12 is located in the second display area B. The light transmittance of the first substrate 11 is greater than that of the second substrate 12. In this way, the light transmittance of the first display area A can be made larger, which is more conducive to the photosensitive element disposed below the first display area A receiving more light.

[0131] The substrate 1 may be a flexible substrate or a rigid substrate. The rigid substrate may be a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.

[0132] When the substrate 1 is a flexible substrate, referring to Figure 4 , the second substrate 12 may be a stack of multiple organic material layers and multiple inorganic material layers overlapping; the first substrate includes at least a transparent material layer 111, and the thickness of the first substrate 11 is the same as the thickness of the second substrate 12. When the thickness of the first substrate 11 is the same as the thickness of the second substrate 12, it is beneficial to make the overall thickness of the display panel 100 the same, so that the overall display panel 100 is more beautiful.

[0133] To ensure a high light transmittance of the first substrate 11, the material of the transparent material layer 111 needs to use a material with a high light transmittance. Preferably, the light transmittance of the transparent material layer 111 of the first substrate 11 may be greater than 90%. Further, the material of the transparent material layer 111 of the first substrate 11 may include at least one of PET (polyethylene terephthalate) and PC (polycarbonate). The light transmittance of both PET and PC is 92%, which can make the light transmittance of the first substrate 11 higher.

[0134] To ensure a high brightness of the second display area B when the display panel 100 is working, it is necessary to make the light transmittance of the second display area B lower to reduce the brightness loss of the second display area B. The light transmittance of the second substrate 12 in the second display area B may be within 30%-60% to reduce the light transmittance of the second display area B and improve the brightness of the second display area B during display.

[0135] Among them, the organic material layer of the second substrate 12 can be made of PI (polyimide). Since the refractive index of PI is not much different from that of PET and PC, the refractive indices of the first substrate 11 and the second substrate 12 are close, thereby avoiding a large difference in the display effects between the first display area A and the second display area B caused by the different refractive indices of the first substrate 11 and the second substrate 12, and making the overall effect of the display panel 100 relatively consistent. Among them, the material of the inorganic material layer of the second substrate 12 can be SiO2, SiNx, etc.

[0136] Furthermore, the first substrate 11 further includes a stack layer 112 where the organic material layer and the inorganic material layer overlap, and the stack layer 112 of the first substrate 11 and the stack layer 121 of the second substrate 12 share a part of the film layer material. Specifically, the organic material layer of the first substrate 11 and the organic material layer of the second substrate 12 in the same layer share the film layer material, and the inorganic material layer of the first substrate and the inorganic material layer of the second substrate 12 in the same layer share the film layer material.

[0137] Refer to again Figure 4 , the stack layer 112 of the first substrate 11 may include a first organic layer 113 and a first inorganic layer 114 located on the first organic layer 113. The stack layer of the second substrate 12 includes a second organic layer 121, a second inorganic layer 122, a third organic layer 123, and a third inorganic layer 124 that overlap in sequence from bottom to top. The first organic layer 113 and a part of the third organic layer 123 share the same film layer material, and the first inorganic layer 114 and the third inorganic layer 124 share the same film layer material. The thickness of the first organic layer 113 is less than the thickness of the third organic layer 123, and the thickness of the first inorganic layer 114 is equal to the thickness of the third inorganic layer 124. Among them, the fact that the first inorganic layer 114 and the third inorganic layer 124 share the same film layer material means that they have the same material and are formed in the same process step. The fact that the first organic layer 113 and a part of the third organic layer 123 share the same film layer material means that they have the same material and are formed simultaneously. When forming the first organic layer 113 and the third organic layer 123, an organic material layer with the same thickness can be formed simultaneously first, and then a part of the organic material layer in the first display area A can be etched away to obtain the first organic layer 113 and the third organic layer 123.

[0138] The transparent material layer 111 of the first substrate 11 may be disposed below the stack 112 of the first substrate 11, and the lower end surface of the transparent material layer 111 of the first substrate 11 is flush with the lower end surface of the second substrate 12. Further, the upper end surface of the stack 112 of the first substrate 11 is flush with the upper end surface of the second substrate 12, so that the total thickness of the first substrate 11 is the same as the total thickness of the second substrate 12, which is more conducive to making the thickness of the display panel 100 substantially the same as a whole and improving the aesthetics of the display panel 100.

[0139] In one embodiment, referring again to Figure 4 , a protective layer 5 is disposed below the first substrate 11, below the second substrate 12, between the side surface of the transparent material layer 111 of the first substrate 11 and the second substrate 12, and / or between the upper end of the transparent material layer 111 of the first substrate 11 and the stack 112 of the first substrate 11. The protective layer 5 can protect the first substrate 11 and the second substrate 12, improve the mechanical strength of the display panel, and thus improve the service life of the display panel 100.

[0140] Among them, the material of the protective layer 5 may include at least one of IZO, ITO, SiNx, and SiOx. The above materials can make the light transmittance of the protective layer 5 relatively high, and avoid the influence of the setting of the protective layer 5 on the light transmittance of the first display area A.

[0141] In one embodiment, a buffer layer 8 may be disposed between the substrate 1 and the driving circuit layer 2. The material of the buffer layer 8 may be SiNx or SiOx. The buffer layer 8 can improve the viscosity performance between the substrate 1 and the driving circuit layer 2, avoid the separation of the substrate 1 and the driving circuit layer 2, and improve the service life of the display panel 100.

[0142] For the display panel 100 provided by the embodiment of the present application, the driving method of the first display area A may be passive driving or active driving. When the driving method of the first display area A is passive driving, the first display area A is a PMOLED display area; when the driving method of the first display area A is active driving, the first display area A is an AMOLED display area. The driving method of the second display area B is active driving, and the second display area is an AMOLED display area.

[0143] Figure 3 It is a cross-sectional view of the first display area A and a part of the second display area B of a display panel 100 along CC'. Refer to Figure 3, the portion of the driving circuit layer 2 located in the second display area B may include a gate insulating layer 24, a capacitive insulating layer 25 located on the gate insulating layer 24, an interlayer dielectric layer 26 located on the capacitive insulating layer 25, a planarization layer 27 located on the interlayer dielectric layer 26, and an anode layer 23 located on the planarization layer 27, as well as transistors (not shown) and storage capacitors (not shown) disposed between the film layers. Among them, the material of the anode layer 23 may be a sandwich structure with an Ag film layer disposed between two indium tin oxide film layers.

[0144] When the first display area A is a PMOLED display area, the structure of the driving circuit layer 2 located in the first display area A may have the following several ways.

[0145] In the first way, referring to Figure 5 ( Figure 5 is a cross-sectional view of the first display area A and a part of the second display area B of a display panel 100 along CC'), the portion of the driving circuit layer 2 located in the first display area A includes a gate insulating layer 24, a capacitive insulating layer 25 located on the gate insulating layer 24, an interlayer dielectric layer 26 located on the capacitive insulating layer 25, a planarization layer 27 located on the interlayer dielectric layer 26, and an anode layer 21 located on the planarization layer 27. Among them, the gate insulating layer 24, the capacitive insulating layer 25, the interlayer dielectric layer 26, the planarization layer 27 of the first display area A and the corresponding film layers of the second display area B are located on the same layer and formed in the same process. The material of the anode layer 21 may be a single-layer film structure made of a transparent material. Further, the transparency of the transparent material of the anode layer 21 is greater than or equal to 90%. Preferably, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. In this way, it can be ensured that the light transmittance of the anode layer 21 in the first display area A is relatively high, and thus the light transmittance of the first display area A is increased.

[0146] In the second way, the driving circuit layer 2 located in the first display area A may only include the anode layer 21 without protecting other film layers, so that the light transmittance of the driving circuit layer in the first display area A is relatively high. Among them, the material of the anode layer 21 may be a single-layer film structure made of a transparent material. Further, the transparency of the transparent material for preparing the anode layer 21 is greater than or equal to 90%. Preferably, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

[0147] In the third way, referring to Figure 5, the driving circuit layer 2 located in the driving circuit of the first display area A may include an anode layer 21 and a transparent organic material film layer 22 disposed under the anode layer 21. Among them, the transparent organic material film layer 22 and the anode layer 21 may be made of a transparent material, and the material of the anode layer 21 may be a single-layer film structure made of a transparent material. Further, the light transmittance of both the transparent organic material film layer 22 and the anode layer 21 is greater than 90%. Preferably, the transparent material for preparing the anode layer 21 is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. The material of the transparent organic material film layer 22 may be PET, PC, etc. Further, the total thickness of the multi-layer insulating layers in the second display area B (i.e., the gate insulating layer 24, the capacitor insulating layer 25, the interlayer dielectric layer 26, and the planarization layer 27 in the second display area B) is the same as the thickness of the transparent organic material film layer 22 in the first display area A, so that the thickness of the part of the driving circuit layer 2 located in the first display area A is the same as the thickness of the part located in the second display area B, which is beneficial to making the thickness of the display panel 100 substantially the same as a whole, thereby improving the aesthetics of the display panel 100.

[0148] When the first display area A is an AMOLED display area, multiple transistors and multiple storage capacitors are provided in the part of the driving circuit layer 2 located in the first display area A. The multiple transistors and multiple storage capacitors constitute multiple first driving circuit units for driving the organic light-emitting material of the light-emitting functional film layer 3 to emit light, so that the first display area A can display.

[0149] The second display area B is an AMOLED display area. Multiple transistors and multiple storage capacitors are provided in the part of the driving circuit layer 2 located in the second display area B. The multiple transistors and multiple storage capacitors constitute multiple second driving circuit units for driving the organic light-emitting material of the light-emitting functional film layer 3 to emit light, so that the second display area A can display.

[0150] In one embodiment, the number of transistors in the first driving circuit unit is less than the number of transistors in the second driving circuit unit. Optionally, the first driving circuit unit may be a 2TIC driving circuit (i.e., the first driving circuit unit includes two transistors and one storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (i.e., the first driving circuit unit includes three transistors and one storage capacitor). The second driving circuit unit may be, for example, a 7TIC circuit (i.e., the second driving circuit unit includes seven transistors and one storage capacitor), a 5TIC circuit (i.e., the second driving circuit unit includes five transistors and one storage capacitor), a 4TIC circuit (i.e., the second driving circuit unit includes four transistors and one storage capacitor), etc. With such a setting, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer in the part of the driving circuit layer 2 located in the first display area A is smaller, and thus the light transmittance of the first display area A can be improved.

[0151] The transistors in the first driving circuit unit may include a first transistor, and the storage capacitor of the first driving circuit unit includes a first electrode plate and a second electrode plate. Refer to Figure 6 and Figure 8 , in the part of the driving circuit layer 2 located in the first display area A, there are a gate insulating layer 24, a capacitive insulating layer 25 located on the gate insulating layer 24, an interlayer dielectric layer 26 located on the capacitive insulating layer 25, a planarization layer 27 located on the interlayer dielectric layer 26, and a first conductive layer 91 located between the gate insulating layer 24 and the capacitive insulating layer 25. A part 912 of the first conductive layer 91 serves as the first electrode plate of the storage capacitor, and another part 911 serves as the gate of the first transistor. With such a setting, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the manufacturing process flow of the first driving circuit unit. Among them, the first electrode plate may be the lower electrode plate of the storage capacitor, and the second electrode plate may be the upper electrode plate of the storage capacitor.

[0152] When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer located in the first display area further includes a power line, a data line, a scanning line, and an anode layer corresponding to a plurality of first driving circuit units one by one. As Figure 6As shown, the part of the driving circuit layer 2 located in the first display area has an anode layer 23 and a second conductive layer 92 corresponding to the first driving circuit units one by one on the planarization layer 27. A part 921 of the second conductive layer 92 serves as the second electrode plate of the storage capacitor, and another part 922 serves as the power supply line. With such a setting, when the power supply line, the second electrode plate of the storage capacitor, and the connection therebetween can be completed through the same step, there is no need to prepare the connection structure between them after the power supply line and the second electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0153] It should be noted that Figure 6 The part of the driving circuit layer 2 shown in the first display area A, in addition to the first conductive layer 91, the second conductive layer 92, and the anode layer 23 shown in the figure, also includes a data line, a scan line, the source and drain of the first transistor, the gate, source, and drain of the second transistor, but Figure 6 these structures are not shown in the figure.

[0154] When the first driving circuit unit is a 2TIC driving circuit, its circuit diagram is as Figure 7 shown. The transistors of the first driving circuit unit include a first transistor T1 and a second transistor T2. The source of the first transistor T1 and the second electrode plate D2 of the storage capacitor C are respectively connected to the power supply line. The drain of the first transistor T1 is connected to the corresponding anode layer. The gate of the first transistor is connected to the first electrode plate D1 of the storage capacitor C. The gate of the second transistor T2 is connected to the scan line. The drain of the second transistor T2 is respectively connected to the first electrode plate D1 of the storage capacitor C and the gate of the first transistor T1. The source of the second transistor T2 is connected to the data line.

[0155] Since the drain of the second transistor T2 is respectively connected to the first electrode plate D1 of the storage capacitor C and the gate of the first transistor T1, and a part of the first conductive layer serves as the first electrode plate D1 of the storage capacitor C and another part serves as the connection of the gate of the first transistor T1, then structurally, the drain of the second transistor T2 is directly connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the second electrode plate D2 of the storage capacitor C and the power supply line, and a part of the second conductive layer serves as the second electrode plate D2 of the storage capacitor C and another part serves as the power supply line, then structurally, the source of the first transistor T1 is connected to the second conductive layer.

[0156] In one embodiment, the materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line, and the anode layer can be made of a transparent material. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. In this way, the light transmittance of the driving circuit layer in the first display area A can be relatively high, and further the light transmittance of the first display area A can be increased.

[0157] When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer located in the first display area A further includes a power line, a data line, a first scan line, a second scan line, a reference potential line, and anode layers corresponding to a plurality of first driving circuit units one by one. As Figure 8 shown, the part of the driving circuit layer 2 located in the first display area further has a third conductive layer 93 on the planarization layer 27. A part 932 of the third conductive layer 93 serves as the second electrode plate, and another part 931 serves as the corresponding anode layer. With such a setting, when the anode layer, the second electrode plate of the storage capacitor, and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the anode layer and the second electrode plate of the storage capacitor after they are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0158] It should be noted that Figure 8 the part of the driving circuit layer 2 located in the first display area shown in the figure, in addition to the first conductive layer 91 and the third conductive layer 93 shown in the figure, further includes a power line, a data line, a first scan line, a second scan line, a reference potential line, the source and drain of the first transistor, the gate, source, and drain of the third transistor, and the gate, source, and drain of the fourth transistor. However, Figure 8 these structures are not shown in the figure.

[0159] When the first driving circuit unit is a 3TIC driving circuit, its circuit diagram is as Figure 9 shown. The transistors of the first driving circuit further include a third transistor T3 and a fourth transistor T4. The source of the third transistor T3 is connected to the data line. The gate of the third transistor T3 is connected to the first scan line. The drain of the third transistor T3 is respectively connected to the first electrode plate D1 of the storage capacitor C and the gate of the first transistor T1. The drain of the first transistor T1 is connected to the power line. The source of the first transistor T1 is respectively connected to the anode layer and the second electrode plate D2 of the storage capacitor C. The gate of the fourth transistor T4 is connected to the second scan line. The source of the fourth transistor T4 is connected to the reference potential line. The drain of the fourth transistor T4 is connected to the anode layer.

[0160] Since the drain of the third transistor T3 is connected to the first electrode plate of the storage capacitor C and the gate of the first transistor T1 respectively, and a part of the first conductive layer serves as the first electrode plate of the storage capacitor C and another part serves as the gate connection of the first transistor T1, structurally, the drain of the third transistor T3 is connected to the first conductive layer. Since the source of the first transistor T1 is connected to the anode layer and the second electrode plate D2 of the storage capacitor C respectively, the drain of the fourth transistor T4 is connected to the anode layer, and a part of the third conductive layer serves as the second electrode plate D2 of the storage capacitor C and another part serves as the corresponding anode layer, structurally, the source of the first transistor T1 is connected to the third conductive layer, and the drain of the fourth transistor T4 is connected to the third conductive layer.

[0161] In one embodiment, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, the first scan line, the second scan line, the reference potential line, and the anode layer of the first driving circuit unit are all made of a transparent material. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. Thus, the light transmittance of the driving circuit layer in the first display area A can be made relatively high, and further the light transmittance of the first display area A is increased.

[0162] The embodiment of the present application further provides a display device 200, as Figure 10 shown, the display device 200 includes a device body 201 and the above-mentioned display panel 100. As Figure 11 shown, the device body 201 has a device area 202, and the display panel 100 covers the device body 201. Among them, the device area 202 is located below the first display area of the display panel 100, and a photosensitive element 203 for collecting light through the first display area of the display panel 100 is provided in the device area 202.

[0163] Among them, the photosensitive element 203 may include a camera and / or a light sensor. Other devices such as a gyroscope or a receiver may also be provided in the device area 403 in addition to the photosensitive element 203.

[0164] The device area 202 may be a slotted area, and the first display area of the display panel 100 may be correspondingly attached to the slotted area, so that the photosensitive element 203 can collect external light through the first display area and perform other operations.

[0165] The above-mentioned display device 200, since the thickness of the conductive layer in the first display area of the display panel 100 it includes is less than the thickness of the conductive layer in the second display area, can make the light transmittance of the first display area greater than that of the second display area. As a result, the photosensitive element disposed below the first display area can receive sufficient light, ensuring that the photosensitive element can work properly.

[0166] The above-mentioned electronic device can be a digital device such as a mobile phone, a tablet computer, a personal digital assistant, an iPod, etc.

[0167] The embodiment of the present application also provides a method for manufacturing a display panel. The display panel has a first display area and a second display area. The manufacturing method includes the following steps 101 to step 104.

[0168] In step 101, a substrate is formed.

[0169] Among them, the substrate can be a flexible substrate or a rigid substrate. The rigid substrate can be, for example, a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.

[0170] When the substrate is a flexible substrate, step 101 of forming the substrate may include the following steps 1011 to step 1012.

[0171] In step 1011, a substrate layer is formed.

[0172] Among them, the substrate layer can be a stack formed by overlapping multiple organic material layers and multiple inorganic material layers. As Figure 12 shown, the substrate layer 101 includes a second organic layer 121, a second inorganic layer 122, a third organic layer 123, and a third inorganic layer 124 that are overlapped in sequence from bottom to top.

[0173] In step 1012, a groove is formed at a position corresponding to the first display area of the substrate layer.

[0174] Through step 1012, a first intermediate structure can be obtained. Figure 13 For the structural schematic diagram of the first intermediate structure. As Figure 13 shown, a groove 102 is formed at the bottom of the substrate layer 101. Among them, an etching process can be used to etch away the second organic layer 121, the second inorganic layer 122, and a part of the thickness of the third organic layer 123 located in the first display area A to form the groove 102.

[0175] In step 1013, a transparent material layer is filled in the groove.

[0176] Among them, the light transmittance of the transparent material layer can be greater than 90%. Further, the material of the transparent material layer can include at least one of PET and PC.

[0177] In one embodiment, before step 1013 of forming a transparent material layer in the groove, the preparation method may further include: forming a protective layer on the inner surface of the groove and below the substrate layer. Through this step, a second intermediate structure can be obtained. Figure 14 FIG. Figure 14 is a schematic structural diagram of the second intermediate structure. A protective layer 5 is formed on the inner surface of the groove 102 and below the part of the substrate layer 101 located in the second display area B.

[0178] Step 1013 can be implemented on the basis of the second intermediate structure. On the basis of the second intermediate structure, a transparent material layer 111 is formed in the groove 102, and a third intermediate structure can be obtained. Figure 15 FIG. Figure 15 is a schematic structural diagram of the third intermediate structure.

[0179] Further, after step 1013 of forming a transparent material layer in the groove, the preparation method may further include: forming a protective layer below the transparent material layer.

[0180] In this step, on the basis of the third intermediate structure, a protective layer 5 is formed below the transparent material layer 111, and the structure shown in Figure 4 can be obtained, that is, the substrate 1 is obtained.

[0181] Wherein, the lower end surface of the transparent material layer 111 may be flush with the lower cross-section of the part of the substrate layer located in the second display area B, so that the thickness of the substrate in the first display area A is the same as that of the substrate in the second display area B.

[0182] In step 102, a driving circuit layer is formed on the substrate.

[0183] In step 103, a light-emitting functional film layer is formed on the driving circuit layer.

[0184] In step 104, a conductive layer is formed on the light-emitting functional film layer. The thickness of the conductive layer in the first display area is less than that of the conductive layer in the second display area. The conductive layer in the first display area and a part of the conductive layer in the second display area are formed simultaneously.

[0185] In one embodiment, step 104 of forming a conductive layer on the light-emitting functional film layer can be completed through the following steps 1041 and 1042.

[0186] In step 1041, a first conductive film layer is formed on the light-emitting functional film layer. The first conductive film layer covers the first display area and the second display area.

[0187] Through step 1041, a fourth intermediate structure can be obtained. Figure 16 FIG. Figure 16 is a schematic structural diagram of the fourth intermediate structure. As Figure 16As shown, a driving circuit layer 2 is formed on a substrate 1, and a light-emitting functional film layer 3 is formed on the driving circuit layer 2. A is a first display area, and B is a second display area. A first conductive film layer 401 is formed on the light-emitting functional film layer 3, and the first conductive film layer 401 covers the light-emitting functional film layer 3 located in both the first display area A and the second display area B at the same time.

[0188] Among them, the material of the first conductive film layer 401 can be indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. Alternatively, the material of the first conductive film layer 401 includes at least one of Mg and Ag. Preferably, the material of the first conductive film layer 401 includes Mg and Ag, and the mass ratio of Mg to Ag ranges from 1:4 to 1:20.

[0189] In step 1042, a second conductive film layer is formed on the first conductive film layer, and the second conductive film layer is only disposed in the second display area.

[0190] Through step 1042, a fifth intermediate structure can be obtained. As Figure 17 shown, it is a schematic structural diagram of the fifth intermediate structure. Among them, the second conductive film layer 402 is only disposed on the second display area B.

[0191] Therefore, in the conductive layer 4 obtained through step 1041 and step 1042, the part of the conductive layer 4 located in the first display area A only has the first conductive film layer 401, and the part of the conductive layer 4 located in the second display area B includes the first conductive film layer 401 and the second conductive film layer 402.

[0192] Among them, the material of the second conductive film layer can include at least one of Mg and Ag.

[0193] In another embodiment, the step 104 of forming a conductive layer on the light-emitting functional film layer can be completed through the following step 1043 and step 1044.

[0194] In step 1043, a third conductive film layer is formed on the light-emitting functional film layer located in the second display area.

[0195] Through step 1043, a sixth intermediate structure can be obtained, Figure 18 which is a schematic structural diagram of the sixth intermediate structure. As Figure 18 shown, a driving circuit layer 2 is formed on a substrate 1, and a light-emitting functional film layer 3 is formed on the driving circuit layer 2. A is a first display area, and B is a second display area. A third conductive film layer 403 is formed on the light-emitting functional film layer 3 and only covers the second display area B.

[0196] Among them, the material of the third conductive film layer 403 can have the same thickness as that of the second conductive film layer 402, and the material of the third conductive film layer 403 can be the same as that of the second conductive film layer 402, including at least one of Mg and Ag.

[0197] In step 1044, a fourth conductive film layer is formed on the light-emitting functional film layer in the first display area and on the third conductive film layer in the second display area.

[0198] The seventh intermediate structure can be obtained through step 1044. Figure 19 The structural schematic diagram of the seventh intermediate structure shown. As Figure 19 shown, the fourth conductive film layer 404 covers the light-emitting film layer 3 in the first display area A and the third conductive film layer 403 in the second display area B.

[0199] Therefore, in the conductive layer 4 obtained through step 1043 and step 1044, the part of the conductive layer 4 located in the first display area A is only the fourth conductive film layer 404, and the part of the conductive layer 4 located in the second display area B includes the third conductive film layer 403 and the fourth conductive film layer 404.

[0200] The material of the fourth conductive film layer 404 can be indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. Alternatively, the material of the fourth conductive film layer 404 includes at least one of Mg and Ag. Preferably, the material of the third conductive film layer 403 includes Mg and Ag, and the mass ratio range of Mg to Ag is 1:4 to 1:20. The thickness of the fourth conductive film layer 404 can be the same as that of the first conductive film layer 401, and the material of the fourth conductive film layer 404 can be the same as that of the first conductive film layer 401.

[0201] For the display panel prepared by the preparation method provided in the embodiments of the present application, the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area, which can make the light transmittance of the first display area greater than that of the second display area, so that the photosensitive element disposed below the first display area can receive sufficient light and ensure the normal operation of the photosensitive element.

[0202] The display panel prepared by the above preparation method and the display panel 100 provided in the above embodiments belong to the same concept. For relevant details, refer to the embodiments of the above display panel 100, which will not be elaborated here.

[0203] The embodiments of the present application also provide a transparent OLED substrate 300, as Figure 20As shown, the transparent OLED substrate 300 includes a substrate 1', a driving circuit layer 2' formed on the substrate 1', and a light-emitting functional film layer 3' formed on the driving circuit layer 2'. Among them, the driving circuit layer 2' includes a plurality of first driving circuit units, and each first driving circuit unit includes a storage capacitor and a first transistor. The storage capacitor includes a first electrode plate and a second electrode plate. Refer to Figure 21 and Figure 22 The first driving circuit unit has a first conductive layer 91'. A part 912' of the first conductive layer 91' serves as the first electrode plate, and another part 911' serves as the gate of the first transistor.

[0204] In the transparent OLED substrate 300 provided by the embodiment of the present application, since a part of the first conductive layer serves as the first electrode plate and another part serves as the gate of the first transistor, the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, without preparing the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0205] Among them, as Figure 21 and Figure 22 shown, the driving circuit layer 2' has a gate insulating layer 24', a capacitor insulating layer 25' located on the gate insulating layer 24', an interlayer dielectric layer 26' located on the capacitor insulating layer 25', a planarization layer 27' located on the interlayer dielectric layer 26', and the first conductive layer 91' is located between the gate insulating layer 24' and the capacitor insulating layer 25'.

[0206] The first driving circuit unit can be a 2TIC driving circuit. When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer may further include a power line, a data line, a scan line, and an anode layer corresponding to each of the plurality of first driving circuit units. Refer to Figure 21 , the driving circuit layer further has an anode layer 23' corresponding to each first driving circuit unit and a second conductive layer 92' located on the planarization layer 27'. A part 922' of the second conductive layer 92' serves as the second electrode plate of the storage capacitor, and another part 921' serves as the power line; the first driving circuit unit further includes a second transistor. The source of the first transistor is connected to the second conductive layer 92', the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scan line, the drain of the second transistor is respectively connected to the first conductive layer, and the source of the second transistor is connected to the data line.

[0207] It should be noted that Figure 21The driving circuit layer 2'shown in the figure, in addition to the first conductive layer 91', the second conductive layer 92', the anode layer 23', the gate insulating layer 24', the capacitive insulating layer 25', the interlayer dielectric layer 26' and the planarization layer 27'shown in the figure, further includes data lines, scan lines, the source and drain of the first transistor, the gate, source and drain of the second transistor. However, Figure 21 these structures are not shown in

[0208] When the first driving circuit unit is a 2TIC driving circuit, its circuit diagram is as shown in Figure 7 The figure shows that the transistors of the first driving circuit unit may include a first transistor T1 and a second transistor T2. The source of the first transistor T1 and the second plate of the storage capacitor C are respectively connected to the power supply line. The drain of the first transistor T1 is connected to the corresponding anode layer. The gate of the first transistor is connected to the first plate D1 of the storage capacitor C. The gate of the second transistor T2 is connected to the scan line. The drain of the second transistor T2 is respectively connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1. The source of the second transistor T2 is connected to the data line.

[0209] Since the drain of the second transistor T2 is respectively connected to the first plate of the storage capacitor C and the gate of the first transistor T1, and a part of the first conductive layer serves as the first plate D1 of the storage capacitor C and another part serves as the gate connection of the first transistor T1, then structurally, the drain of the second transistor T2 is directly connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the second plate D2 of the storage capacitor C and the power supply line, and a part of the second conductive layer serves as the second plate D2 of the storage capacitor C and another part serves as the power supply line, then structurally, the source of the first transistor T1 is connected to the second conductive layer.

[0210] The materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line and the anode layer are made of transparent materials. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver or indium zinc oxide doped with silver. In this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be relatively high, and then the light transmittance of the transparent OLED substrate can be improved.

[0211] The first driving circuit unit can be a 3TIC driving circuit. When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer may further include a power supply line, a data line, a first scan line, a second scan line, a reference potential line and anode layers corresponding to a plurality of first driving circuit units one by one. As shown in Figure 22As shown, the driving circuit layer 2' has a third conductive layer 93' located on the planarization layer 27'. A part 932' of the third conductive layer 93' serves as the second electrode plate, and another part 931' serves as the corresponding anode layer. With such an arrangement, when the anode layer, the second electrode plate of the storage capacitor, and the connection therebetween can be completed in the same step, there is no need to prepare the connection structure between the anode layer and the second electrode plate of the storage capacitor after they are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0212] It should be noted that Figure 22 In addition to the first conductive layer 91', the third conductive layer 93', the gate insulating layer 24', the capacitor insulating layer 25', the interlayer dielectric layer 26', and the planarization layer 27' shown in the figure, the driving circuit layer 2' also includes a power supply line, a data line, a first scan line, a second scan line, a reference potential line, the source and drain of the first transistor, the gate, source, and drain of the third transistor, and the gate, source, and drain of the fourth transistor. However Figure 22 these structures are not shown in the figure.

[0213] When the first driving circuit unit is a 3TIC driving circuit, its circuit diagram is as shown in Figure 9 As shown, the transistors of the first driving circuit unit further include a third transistor T3 and a fourth transistor T4. The source of the third transistor T3 is connected to the data line, the gate of the third transistor T3 is connected to the first scan line, the drain of the third transistor T3 is respectively connected to the first electrode plate D1 of the storage capacitor C and the gate of the first transistor T1. The drain of the first transistor T1 is connected to the power supply line, the source of the first transistor T1 is respectively connected to the anode layer and the second electrode plate D2 of the storage capacitor C. The gate of the fourth transistor T4 is connected to the second scan line, the source of the fourth transistor T4 is connected to the reference potential line, and the drain of the fourth transistor T4 is connected to the corresponding anode layer.

[0214] Since the drain of the third transistor T3 is respectively connected to the first electrode plate D1 of the storage capacitor C and the gate of the first transistor T1, and a part of the first conductive layer serves as the first electrode plate D1 of the storage capacitor C and another part serves as the gate connection of the first transistor T1, in terms of structure, the drain of the third transistor T3 is connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the anode layer and the second electrode plate D2 of the storage capacitor C, and the drain of the fourth transistor T4 is connected to the anode layer, and a part of the third conductive layer serves as the second electrode plate D2 of the storage capacitor C and another part serves as the corresponding anode layer, in terms of structure, the source of the first transistor T1 is connected to the third conductive layer, and the drain of the fourth transistor T4 is connected to the third conductive layer.

[0215] Preferably, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, the first scan line, the second scan line, the reference potential line, and the anode layer are made of a transparent material. Preferably, the transparency of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver. In this way, the light transmittance of the driving circuit layer of the transparent OLED substrate can be relatively high, and thus the light transmittance of the transparent OLED substrate can be increased.

[0216] An embodiment of the present application further provides a transparent display panel, which includes the above-mentioned transparent OLED substrate and a first encapsulation layer, and the first encapsulation layer is disposed on a side of the transparent OLED substrate away from the substrate.

[0217] In the transparent display panel provided by the embodiment of the present application, since a part of the first conductive layer of the transparent OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed through the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after the gate of the first transistor and the first electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0218] Among them, the first encapsulation layer may be a thin film encapsulation structure. The thin film encapsulation structure may include a stack of alternately stacked organic material layers and inorganic material layers. Both the organic material layer and the inorganic material layer are transparent materials. The materials of the inorganic material layer may be, for example, SiO2, SiNx, and Al2O3, etc., and the materials of the organic material layer may be, for example, PI, PET, etc. The first encapsulation layer may also be a glass cover plate or a glass powder encapsulation structure.

[0219] An embodiment of the present application further provides an array substrate, which includes a first OLED substrate and a second OLED substrate. The first OLED substrate includes the above-mentioned transparent OLED substrate, and the second OLED substrate is a non-transparent OLED substrate; the first OLED substrate and the second OLED substrate share the same substrate, and the light-emitting functional film layers of the first OLED substrate and the second OLED substrate are formed in the same process.

[0220] In the array substrate provided by the embodiment of the present application, since a part of the first conductive layer of the first OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed through the same step, there is no need to prepare the connection structure between them after the gate of the first transistor and the first electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit.

[0221] Wherein, at least a part of the first OLED substrate of the array substrate may be surrounded by the second OLED substrate.

[0222] In one embodiment, the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit unit is greater than the number of transistors included in the first driving circuit unit. Optionally, the first driving circuit unit may be a 2TIC driving circuit (that is, the first driving circuit unit includes two transistors and one storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit unit includes three transistors and one storage capacitor). The second driving circuit unit may be, for example, a 7TIC circuit (that is, the second driving circuit unit includes seven transistors and one storage capacitor), a 5TIC circuit (that is, the second driving circuit unit includes five transistors and one storage capacitor), a 4TIC circuit (that is, the second driving circuit unit includes four transistors and one storage capacitor), etc. With such a setting, the structural complexity of the first driving circuit unit is less than that of the second driving circuit unit, so that the area of the conductive layer of the driving circuit layer of the first OLED substrate is smaller, thereby improving the light transmittance of the first OLED substrate.

[0223] The embodiment of the present application also provides a display screen, which includes the above-mentioned array substrate and a second packaging structure. The second packaging structure is disposed on the array substrate, and a photosensitive element may be disposed below the first OLED substrate of the array substrate.

[0224] In the display screen provided by the embodiment of the present application, since a part of the first conductive layer of the first OLED substrate serves as the first electrode plate of the storage capacitor and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection therebetween can be completed through the same step, there is no need to prepare the connection structure between them after the gate of the first transistor and the first electrode plate of the storage capacitor are formed, which can simplify the manufacturing process flow of the first driving circuit unit, and further simplify the manufacturing process flow of the driving circuit layer of the first OLED substrate.

[0225] Among them, the second encapsulation layer may be a thin-film encapsulation structure, which may include a stack of alternately stacked organic material layers and inorganic material layers. Both the organic material layer and the inorganic material layer are transparent materials. The material of the inorganic material layer may be, for example, SiO2, SiNx, Al2O3, etc., and the material of the organic material layer may be, for example, PI, PET, etc. The second encapsulation layer may also be a glass cover plate or a glass powder encapsulation structure.

[0226] An embodiment of the present application further provides a display device, which includes a device body and the above-mentioned display screen. The device body has a device area, and the display screen covers the device body. Among them, the device area is located below the first OLED substrate, and a photosensitive element for collecting light through the first OLED substrate is provided in the device area.

[0227] Among them, the photosensitive element may include a camera and / or a light sensor. Other devices except the photosensitive element may also be provided in the device area, such as a gyroscope or a receiver, etc.

[0228] The device area may be a slotted area, and the first OLED substrate of the display screen may be correspondingly attached to the slotted area, so that the photosensitive element can collect external light through the first OLED substrate and perform other operations.

[0229] Since in the above-mentioned display device, a part of the first conductive layer of the first OLED substrate serves as the first electrode plate of the storage capacitor, and another part serves as the gate of the first transistor, when the gate of the first transistor, the first electrode plate of the storage capacitor, and the connection between the two can be completed through the same step, there is no need to prepare the connection structure between the gate of the first transistor and the first electrode plate of the storage capacitor after they are formed, which can simplify the preparation process flow of the first driving circuit unit, and further simplify the preparation process flow of the driving circuit layer of the first OLED substrate.

[0230] The above-mentioned electronic device may be a digital device such as a mobile phone, a tablet computer, a handheld computer, an iPod, etc.

[0231] It should be noted that in the drawings, the dimensions of layers and regions may be exaggerated for clarity of illustration. And it can be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element, or there may be an intermediate layer. Additionally, it can be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element, or there may be more than one intermediate layer or element. Further, it can be understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or there may be more than one intermediate layer or element. Like reference numerals throughout indicate like elements.

[0232] In the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The term "plurality" refers to two or more, unless otherwise specifically defined.

[0233] Other embodiments of the present invention will be readily apparent to those skilled in the art upon consideration of the specification and practice of the disclosure herein. The present invention is intended to cover any variations, uses, or adaptations of the present invention that follow the general principles of the present invention and include known common knowledge or conventional technical means in the technical field not disclosed by the present invention. The specification and examples are to be considered exemplary only, and the true scope and spirit of the present invention are pointed out by the following claims.

[0234] It should be understood that the present invention is not limited to the exact structures described above and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the present invention is only limited by the appended claims.

Claims

1. A display panel, characterized in that, The display panel has a first display area (A) and a second display area (B). A photosensitive element can be disposed below the first display area (A). The display panel includes a substrate (1), a driving circuit layer (2), a light-emitting functional film layer (3), and a conductive layer (4) located in the first display area (A) and the second display area (B); The driving circuit layer (2) is formed on the substrate (1); The light-emitting functional film layer (3) is formed on the driving circuit layer (2); The conductive layer (4) is formed on the light-emitting functional film layer (3). The thickness (d1) of the conductive layer in the first display area (A) is less than the thickness (d2) of the conductive layer in the second display area (B); the conductive layer is a cathode layer that covers the first display area and the second display area of the display panel; The first display area and the second display area are AMOLED display areas; the driving circuit layer in the first display area includes a plurality of first driving circuit units, and each first driving circuit unit includes a transistor and a storage capacitor; the driving circuit layer in the second display area includes a plurality of second driving circuit units, and each second driving circuit unit includes a storage capacitor and a transistor; the number of transistors in the first driving circuit unit is less than the number of transistors in the second driving circuit unit.

2. The display panel according to claim 1, wherein The material of the conductive layer in the first display area is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver, or, The material of the conductive layer in the first display area includes at least one of Mg and Ag.

3. The display panel according to claim 2, characterized in that, The mass ratio range of Mg to Ag is 1:4 to 1:

20.

4. The display panel according to claim 1, wherein The light-emitting functional film layer includes an organic light-emitting material and an electron injection layer located between the organic light-emitting material and the conductive layer. The material of the electron injection layer includes Ag and at least one of Mg, K, Li, and Cs.

5. The display panel according to claim 4, wherein The mass ratio range of Ag in the electron injection layer to the total mass of the electron injection layer is 1:5 to 1:

21.

6. The display panel according to claim 1, characterized in that, The ratio range of the thickness of the conductive layer in the first display area (A) to the thickness of the conductive layer in the second display area (B) is 0.25:1 to 0.85:

1.

7. The display panel according to claim 6, wherein The thickness range of the conductive layer in the first display area (A) is 5 to 10 nm, and the thickness range of the conductive layer in the second display area (B) is 12 to 20 nm.

8. The display panel according to claim 1, wherein The substrate (1) includes a first substrate (11) and a second substrate (12). The first substrate (11) is located in the first display area (A), and the second substrate is located in the second display area (B). The light transmittance of the first substrate (11) is greater than the light transmittance of the second substrate (12).

9. The display panel according to claim 8, wherein, The second substrate is a stack formed by overlapping multiple organic material layers and multiple inorganic material layers; the first substrate at least includes a transparent material layer, and the thickness of the first substrate is the same as the thickness of the second substrate.

10. The display panel according to claim 9, characterized in that, The first substrate further includes a stack formed by overlapping an organic material layer and an inorganic material layer, and the stack of the first substrate shares a part of the film layer material with the stack of the second substrate.

11. The display panel according to claim 10, wherein, The stack of the first substrate includes a first organic layer and a first inorganic layer located on the first organic layer. The stack of the second substrate includes a second organic layer, a second inorganic layer, a third organic layer, and a third inorganic layer that are stacked in sequence from bottom to top. The first organic layer shares the same film layer material with a part of the third organic layer, and the first inorganic layer shares the same film layer material with the third inorganic layer. The thickness of the first organic layer is less than that of the third organic layer, and the thickness of the first inorganic layer is equal to that of the third inorganic layer.

12. The display panel according to claim 11, wherein The transparent material layer of the first substrate is disposed below the stack of the first substrate, and the lower end surface of the transparent material layer of the first substrate is flush with the lower end surface of the second substrate.

13. The display panel according to claim 8, wherein The light transmittance of the transparent material layer of the first substrate is greater than 90%.

14. The display panel according to claim 8, wherein The material of the transparent material layer of the first substrate includes at least one of PET and PC.

15. The display panel according to claim 8, wherein The light transmittance of the second substrate is within 30% - 60%.

16. The display panel according to claim 8, wherein A protective layer is provided below the first substrate (11), below the second substrate (12), between the side surface of the transparent material layer of the first substrate and the second substrate, and / or between the upper end of the transparent material layer of the first substrate and the stack of the first substrate.

17. The display panel according to claim 16, wherein The material of the protective layer includes at least one of IZO, ITO, SiNx, and SiOx.

18. The display panel according to claim 1, wherein The driving circuit layer of the first display area includes an anode layer.

19. The display panel according to claim 18, wherein, The driving circuit layer of the first display area includes an anode layer and a transparent organic material film layer disposed under the anode layer.

20. The display panel according to claim 19, wherein The driving circuit layer of the second display area includes multiple insulating layers, and the thickness of the transparent organic material film layer is the same as the total thickness of the multiple insulating layers of the second display area.

21. The display panel according to claim 1, characterized in that, The transistor of the first driving circuit unit includes a first transistor, and the storage capacitor of the first driving circuit unit includes a first electrode plate and a second electrode plate; the first driving circuit unit has a first conductive layer, a part of the first conductive layer serves as the first electrode plate, and another part serves as the gate of the first transistor.

22. The display panel according to claim 21, wherein, The driving circuit layer located in the first display area further includes a power line, a data line, a scan line, and an anode layer corresponding to multiple first driving circuit units one by one. The driving circuit layer of the first display area further has a second conductive layer, a part of the second conductive layer serves as the second electrode plate, and another part serves as the power line; the transistor of the first driving circuit unit further includes a second transistor. The source electrode of the first transistor is connected to the second conductive layer, the drain electrode of the first transistor is connected to the corresponding anode layer, the gate electrode of the second transistor is connected to the scan line, the drain electrode of the second transistor is respectively connected to the first conductive layer, and the source electrode of the second transistor is connected to the data line.

23. The display panel according to claim 22, wherein, The materials of the first transistor, the second transistor, the storage capacitor, the data line, the scan line, and the anode layer are made of a transparent material.

24. The display panel according to claim 23, characterized in that, The transparency of the transparent material is greater than or equal to 90%.

25. The display panel according to claim 24, wherein, The transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

26. The display panel according to claim 22, characterized in that, The driving circuit layer located in the first display area further includes a power supply line, a data line, a first scanning line, a second scanning line, a reference potential line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer in the first display area further has a third conductive layer. A part of the third conductive layer serves as the second electrode plate, and another part serves as the corresponding anode layer. The transistors of the first driving circuit unit further include a third transistor and a fourth transistor. The source electrode of the third transistor is connected to the data line, the gate electrode of the third transistor is connected to the first scanning line, the drain electrode of the third transistor is connected to the first conductive layer, the drain electrode of the first transistor is connected to the power supply line, the source electrode of the first transistor is connected to the third conductive layer, the gate electrode of the fourth transistor is connected to the second scanning line, the source electrode of the fourth transistor is connected to the reference potential line, and the drain electrode of the fourth transistor is connected to the third conductive layer.

27. The display panel according to claim 26, wherein The first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scanning line, the second scanning line, the reference potential line, and the anode layer are made of a transparent material.

28. The display panel according to claim 27, wherein, The transparency of the transparent material is greater than or equal to 90%.

29. The display panel according to claim 27, wherein, The transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

30. A display device, characterized in that, Comprising: A device body having a device area; The display panel according to any one of claims 1 to 29, covering the device body; Wherein, the device area is located below the first display area, and a photosensitive element for collecting light through the first display area is provided in the device area.

31. The display device according to claim 30, wherein The photosensitive element includes a camera and / or a light sensor.

32. A method for preparing a display panel, characterized in that, The display panel has a first display area and a second display area. The manufacturing method includes: Forming a substrate; Forming a driving circuit layer on the substrate; Forming a light-emitting functional film layer on the driving circuit layer; Forming a conductive layer on the light-emitting functional film layer. The thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area. The conductive layer in the first display area and a part of the conductive layer in the second display area are formed simultaneously; The first display area and the second display area are AMOLED display areas. The driving circuit layer located in the first display area includes a plurality of first driving circuit units. The first driving circuit unit includes a transistor and a storage capacitor. The driving circuit layer located in the second display area includes a plurality of second driving circuit units. The second driving circuit unit includes a storage capacitor and a transistor. The number of transistors of the first driving circuit unit is less than the number of transistors of the second driving circuit unit.

33. The preparation method according to claim 32, wherein The forming of the conductive layer on the light-emitting functional film layer includes: Forming a first conductive film layer on the light-emitting functional film layer. The first conductive film layer covers the first display area and the second display area; Forming a second conductive film layer on the first conductive film layer. The second conductive film layer is only provided in the second display area; or, The forming of the conductive layer on the light-emitting functional film layer includes: A third conductive film layer is formed on the light-emitting functional film layer located in the second display area; A fourth conductive film layer is formed on the light-emitting functional film layer in the first display area and on the third conductive film layer in the second display area.

34. The preparation method according to claim 32, wherein The formation of the substrate includes: Forming a substrate layer; Forming a groove at a position corresponding to the first display area on the substrate layer; Filling a transparent material layer in the groove.

35. The preparation method according to claim 34, characterized in that, The formation of the substrate layer includes: forming a stack in which an organic material layer and an inorganic material layer overlap.

36. The preparation method according to claim 34, characterized in that, Before forming the transparent material layer in the groove, it further includes: forming a protective layer on the inner surface of the groove and below the substrate layer.

37. The preparation method according to claim 34, characterized in that, After forming the transparent material layer in the groove, it further includes: forming a protective layer below the transparent material layer and the substrate layer.

38. An array substrate, characterized in that, The array substrate includes a first OLED substrate and a second OLED substrate. The first OLED substrate includes a transparent OLED substrate, and the second OLED substrate is a non-transparent OLED substrate; The first OLED substrate and the second OLED substrate share the same substrate, and the light-emitting functional film layers of the first OLED substrate and the second OLED substrate are formed in the same process; The transparent OLED substrate includes: A substrate; A driving circuit layer formed on the substrate; A light-emitting functional film layer formed on the driving circuit layer; Among them, the driving circuit layer includes a plurality of first driving circuit units. The first driving circuit unit includes a storage capacitor and a first transistor. The storage capacitor includes a first electrode plate and a second electrode plate; the first driving circuit unit has an integrally structured first conductive layer. A part of the first conductive layer serves as the first electrode plate, and another part serves as the gate of the first transistor; the driving circuit layer further includes a gate insulating layer, a capacitor insulating layer located on the gate insulating layer, an interlayer dielectric layer located on the capacitor insulating layer, and a planarization layer located on the interlayer dielectric layer. The first conductive layer is located between the gate insulating layer and the capacitor insulating layer; the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit unit is greater than the number of transistors included in the first driving circuit unit.

39. The array substrate according to claim 38, wherein At least a part of the first OLED substrate is surrounded by the second OLED substrate.

40. The array substrate according to claim 38, wherein The driving circuit layer further includes a power supply line, a data line, a scan line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer further has a second conductive layer. A part of the second conductive layer serves as the second electrode plate, and another part serves as the power supply line; the first driving circuit unit further includes a second transistor. The source of the first transistor is connected to the second conductive layer, the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scan line, the drain of the second transistor is respectively connected to the first conductive layer, and the source of the second transistor is connected to the data line.

41. The array substrate according to claim 40, wherein, The first transistor, the second transistor, the storage capacitor, the data line, the scan line, and the anode layer are made of transparent materials.

42. The array substrate according to claim 41, wherein, The transparency of the transparent material is greater than or equal to 90%.

43. The array substrate according to claim 41, wherein, The transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

44. The array substrate according to claim 38, wherein The driving circuit layer further includes a power line, a data line, a first scanning line, a second scanning line, a reference potential line, and an anode layer corresponding to a plurality of first driving circuit units one by one. The driving circuit layer further has a third conductive layer. A part of the third conductive layer serves as the second electrode plate, and another part serves as the corresponding anode layer. The first driving circuit unit further includes a third transistor and a fourth transistor. The source electrode of the third transistor is connected to the data line. The gate electrode of the third transistor is connected to the first scanning line. The drain electrode of the third transistor is connected to the first conductive layer. The drain electrode of the first transistor is connected to the power line. The source electrode of the first transistor is connected to the third conductive layer. The gate electrode of the fourth transistor is connected to the second scanning line. The source electrode of the fourth transistor is connected to the reference potential line. The drain electrode of the fourth transistor is connected to the third conductive layer.

45. The array substrate according to claim 44, wherein The first transistor, the third transistor, the fourth transistor, the storage capacitor, the data line, the first scanning line, the second scanning line, the reference potential line, and the anode layer are made of a transparent material.

46. The array substrate according to claim 45, wherein The transparency of the transparent material is greater than or equal to 90%.

47. The array substrate according to claim 45, wherein, The transparent material is indium tin oxide, indium zinc oxide, indium tin oxide doped with silver, or indium zinc oxide doped with silver.

48. A display screen, characterized in that, The display screen includes the array substrate according to any one of claims 38-47 and a second encapsulation structure. The second encapsulation structure is disposed on the array substrate. A photosensitive element may be disposed below the first OLED substrate of the array substrate.

49. A display device, characterized in that, The display device includes: A device body having a device area; The display screen according to claim 48, covering the device body; Wherein, the device area is located below the first OLED substrate, and a photosensitive element for collecting light through the first OLED substrate is disposed in the device area.

50. The display device according to claim 49, characterized in that, The photosensitive element includes a camera and / or a light sensor.

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