An electromagnetic vibration energy harvester integrated on a silicon substrate and a method of manufacture

Abstract

The application discloses an electromagnetic vibration energy collector integrated on a silicon substrate and a preparation method thereof, which comprises a solenoid, a micro-magnet and a baffle on the silicon substrate; the inside of the solenoid on the silicon substrate is a hollow cavity, the micro-magnet is slidably arranged in the cavity, and the micro-magnet reciprocates in the cavity relative to the solenoid on the silicon substrate when being excited by an external excitation; and the baffle is arranged at both ends of the solenoid on the silicon substrate and exerts a collision force on the micro-magnet in the opposite direction of the movement direction of the micro-magnet. The electromagnetic vibration energy collector provided by the application generates electricity by cutting magnetic induction lines through the solenoid and is realized based on the 3D solenoid which can be integrated on the silicon substrate, so that the problems of large size and difficulty in batch production of the electromagnetic vibration energy collector in the prior art are solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of micro-mechanical sensing, in particular to an electromagnetic vibration energy harvester integrated on a silicon substrate and a preparation method thereof. BACKGROUND

[0002] Since the 21st century, the development of MEMS technology has enabled the miniaturization and integration of many sensors. The power consumption of these devices can be reduced to the order of microwatts and milliwatts. Conversely, the problem of miniaturization of power supply devices has become increasingly prominent. With the miniaturization of electromechanical systems, the size of the power supply device will determine the size of the entire system. If the miniaturized power supply device cannot generate enough energy, the microsystem cannot take advantage of its miniaturization. In addition, in many cases, it is also very inconvenient to replace or charge the on-site battery. Therefore, in order to solve these problems, miniaturized energy harvesters that can convert environmental energy into electrical energy and provide long-term power supply are receiving more and more attention.

[0003] In order to provide sufficient energy for micro-electromechanical systems, researchers have studied alternative energy sources in the environment, such as thermal energy, solar energy, wind energy and vibration energy, which are environmentally friendly and theoretically unlimited. Among these sustainable energy sources, vibration energy has unique advantages. First, it can be obtained almost anywhere, such as the human body, building structures and mechanical equipment. Second, the vibration energy in the environment is very abundant and can power most low-power applications, such as wearable electronic devices, wireless sensor nodes and biomedical implantable devices. In addition, there are many types of energy conversion methods for vibration energy, and they are easy to implement. Therefore, vibration energy harvesters have rapidly developed as an alternative to batteries and can provide power for many wireless sensors and low-power devices. For vibration energy harvesters, miniaturization is usually highly required. Electromagnetic vibration energy harvesters can generate a large power density, but it is difficult to mass-produce them through wafer-level MEMS technology. The solenoid coil is usually made by winding, which has a complex manufacturing process and is difficult to mass-produce, which will hinder the miniaturization and uniformity of batch production. SUMMARY

[0004] In order to solve the problem of large volume and difficult batch production of electromagnetic vibration energy harvesters, the present application provides an electromagnetic vibration energy harvester integrated on a silicon substrate and a preparation method thereof. By integrating a micro-magnet in the internal cavity of the 3D solenoid coil on the silicon substrate, the micro-magnet and the solenoid coil can move relative to each other under external vibration, and power generation is achieved by the solenoid cutting the magnetic induction lines. Thus, the electromagnetic vibration energy harvester based on the integration of the 3D solenoid coil on the silicon substrate is realized, solving the problem of large volume and difficult batch production of electromagnetic vibration energy harvesters in the prior art.

[0005] The technical solutions of the present application are as follows:

[0006] The present application provides an electromagnetic vibration energy harvester integrated on a silicon substrate, comprising: a solenoid on the silicon substrate, a micro-magnet and a baffle;

[0007] The solenoid on the silicon substrate has a hollow cavity inside, the micro-magnet is slidingly arranged in the cavity, and the micro-magnet reciprocates in the cavity relative to the solenoid on the silicon substrate when excited by an external excitation;

[0008] The baffle is arranged at both ends of the solenoid on the silicon substrate, and exerts a collision force on the micro-magnet in the opposite direction of the movement direction of the micro-magnet.

[0009] Further preferably, the solenoid on the silicon substrate is a single-layer solenoid on the silicon substrate, specifically comprising:

[0010] An upper silicon substrate, one side of the upper silicon substrate is engraved with a solenoid slot and an electrode slot, and the other side is engraved with a cavity for free movement of the micro-magnet;

[0011] A lower silicon substrate, one side of the lower silicon substrate is engraved with a solenoid slot and an electrode slot, and the other side is engraved with a cavity for free movement of the micro-magnet, when the upper silicon substrate and the lower silicon substrate are aligned, the cavities of the upper silicon substrate and the lower silicon substrate form a hollow cavity;

[0012] A metal solenoid, the metal solenoid penetrates the solenoid slot of the upper silicon substrate and the solenoid slot of the lower silicon substrate;

[0013] An electrode, the electrode is arranged in the electrode slot of the upper silicon substrate and the electrode slot of the lower silicon substrate.

[0014] Further preferably, the solenoid on the silicon substrate is a double-layer solenoid on the silicon substrate, specifically comprising:

[0015] An external upper silicon substrate, one side of the external upper silicon substrate is engraved with an external solenoid slot and an electrode slot;

[0016] An internal upper silicon substrate, one side of the internal upper silicon substrate is engraved with an internal solenoid slot, and the other side is engraved with a cavity for free movement of the micro-magnet;

[0017] An internal lower silicon substrate, one side of the internal lower silicon substrate is engraved with an internal solenoid slot, and the other side is engraved with a cavity for free movement of the micro-magnet;

[0018] An external lower silicon substrate, one side of the external lower silicon substrate is engraved with an external solenoid slot and an electrode slot;

[0019] An external metal solenoid, the external metal solenoid penetrates the external solenoid slot of the external upper silicon substrate and the external solenoid slot of the external lower substrate;

[0020] an inner layer metal solenoid coil, which is arranged in the inner layer solenoid slot of the inner upper layer silicon substrate and the inner layer solenoid slot of the inner lower layer silicon substrate;

[0021] an electrode, which is arranged in the electrode slot of the outer upper layer silicon substrate and the electrode slot of the outer lower layer silicon substrate.

[0022] Further preferably, the method further comprises preparing an extension silicon substrate, which is engraved with a cavity for allowing the micro-magnet to move freely, and placing the prepared extension silicon substrate in the hollow cavity of the solenoid coil supported on the silicon substrate to extend the height of the hollow cavity.

[0023] The application also provides a method for preparing an electromagnetic vibration energy harvester integrated on a silicon substrate, comprising the steps of:

[0024] forming a cavity on one surface of a double-sided silicon oxide wafer and forming a solenoid slot, an electrode slot and a through hole on the other surface of the double-sided silicon oxide wafer by photolithography and etching to prepare an upper layer silicon substrate and a lower layer silicon substrate;

[0025] aligning the prepared upper layer silicon substrate and lower layer silicon substrate;

[0026] filling the aligned upper layer silicon substrate and lower layer silicon substrate by micro-casting to form a micro-cast metal solenoid coil and further form a solenoid coil on a silicon substrate;

[0027] placing a micro-magnet in the cavity formed by the upper layer silicon substrate and the lower layer silicon substrate;

[0028] arranging a baffle at both ends of the solenoid coil on the silicon substrate.

[0029] Further preferably, the method further comprises preparing an extension silicon substrate and placing the prepared extension silicon substrate between the upper layer silicon substrate and the lower layer silicon substrate to extend the height of the cavity formed by the upper layer silicon substrate and the lower layer silicon substrate through the extension silicon substrate.

[0030] Further preferably, the preparation of the extension silicon substrate comprises the steps of:

[0031] forming a through hole connected to the upper layer silicon substrate and the lower layer silicon substrate and a cavity for allowing the micro-magnet to move freely on the silicon wafer by photolithography.

[0032] The electromagnetic vibration energy harvester integrated on a silicon substrate and the method for preparing the same provided by the application have the following effects:

[0033] The electromagnetic vibration energy collector is formed by forming a solenoid on a silicon substrate through a micro-casting process and arranging a micro-magnet in a cavity of the silicon substrate, so that the electromagnetic vibration energy collector based on the 3D solenoid integrated on the silicon substrate is realized, and the problems of large size and difficulty in batch production of the electromagnetic vibration energy collector in the prior art are solved. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 A structure schematic diagram of the electromagnetic vibration energy collector provided by the present application is shown in the figure.

[0035] Figure 2 A schematic diagram of power generation performance of the electromagnetic vibration energy collector provided by the present application changing with external acceleration is shown in the figure.

[0036] Figure 3 A schematic diagram of power generation performance of the electromagnetic vibration energy collector provided by the present application changing with external vibration frequency is shown in the figure.

[0037] Figure 4 A structure schematic diagram of another electromagnetic vibration energy collector provided by the present application is shown in the figure.

[0038] Figure 5 A sectional view of the electromagnetic vibration energy collector provided by the present application is shown in the figure. Figure 4

[0039] Figure 6 A flow chart of preparation of the electromagnetic vibration energy collector provided by the present application is shown in the figure. DETAILED DESCRIPTION

[0040] The present application will be further described in detail through specific embodiments combined with the drawings.

[0041] Embodiment one:

[0042] The present embodiment provides an electromagnetic vibration energy collector integrated on a silicon substrate, a structure schematic diagram of which is shown in the figure and includes a solenoid 1, a micro-magnet 2 and a baffle 3 on the silicon substrate. Figure 1

[0043] The solenoid 1 on the silicon substrate has a hollow cavity 4 inside, the micro-magnet 2 is arranged in the cavity 4, and the micro-magnet 2 reciprocates in the cavity 4 relative to the solenoid 1 on the silicon substrate when excited by the external environment; the baffle 3 is arranged at both ends of the solenoid 1 on the silicon substrate to exert a collision force opposite to the movement direction of the micro-magnet.

[0044] In the present embodiment, the solenoid 1 on the silicon substrate is a single-layer solenoid on the silicon substrate, specifically including an upper silicon substrate 11, a lower silicon substrate 12, a metal solenoid 13 and an electrode 14.

[0045] ​​The upper silicon substrate 11 is engraved with a spiral slot and an electrode slot on one side and a cavity for allowing the micro magnet 2 to move freely on the other side, and the lower silicon substrate 12 is engraved with a spiral slot and an electrode slot on one side and a cavity for allowing the micro magnet 2 to move freely on the other side, so that when the upper silicon substrate 11 is aligned with the lower silicon substrate 12, the cavity of the upper silicon substrate 11 and the cavity of the lower silicon substrate 12 form a hollow cavity.

[0046] The metal spiral coil 13 is specifically a micro-cast metal spiral coil which is formed through the spiral slots of the upper silicon substrate 11 and the lower silicon substrate 12 by a micro-casting process.

[0047] Further, the upper silicon substrate 11 and the lower silicon substrate 12 are also respectively provided with through holes which are in communication with each other, so that the metal spiral coil 13 is formed through the spiral slots of the upper silicon substrate 11 and the lower silicon substrate 12 by the micro-casting process through the through holes of the upper silicon substrate 11 and the lower silicon substrate 12.

[0048] The electrode 14 is also formed in the electrode slots of the upper silicon substrate 11 and the lower silicon substrate 12 by a micro-casting process, for subsequent output of electric energy.

[0049] The micro magnet 2 is a magnet with N and S poles, and the micro magnet 2 can freely slide in the cavity 4 under external excitation, and generates electricity by cutting the magnetic induction lines of the metal spiral coil 13.

[0050] The baffle 3 can be a non-magnetic material or a magnetic material, for example, the baffle 3 can be glass, rubber, silicon, non-magnetic metal, etc., and a predetermined distance is provided between the baffle 3 and the end of the spiral coil 1 on the silicon substrate, and the baffle 3 functions to exert a collision force on the micro magnet 2 in the opposite direction of the movement direction of the micro magnet 2.

[0051] Specifically, when the spiral coil has 150 turns, the line width is 25um, the line spacing is 40um, the line depth is 200um, the cavity is 1.1mm*1.1mm, the total length of the spiral coil is 10.5mm, the width is 2.5mm, the height is 1.7mm, the resistance is 7.5Ω, the micro magnet 2 is a cylindrical neodymium iron boron magnet with a diameter of 1mm and a length of 5.2mm, and the distance between the two baffles is 2cm.

[0052] The working principle of the electromagnetic vibration energy harvester of the embodiment is that when external vibration occurs, the micro magnet 2 is excited by the external excitation to reciprocatingly move relative to the spiral coil in the cavity 4, and when the vibration gradually becomes stronger, the reciprocating movement of the micro magnet 2 relative to the metal spiral coil 13 also gradually becomes stronger, and the output power and the voltage peak (V P-PThe vibration will gradually increase, and when the external vibration is large enough, the micro magnet 2 will collide with the baffle 3. The baffle 3 applies a collision force to the micro magnet 2 in the opposite direction of its relative motion, which enhances the reciprocating relative motion between the micro magnet 2 and the metal solenoid coil 13, increasing the output power and the peak output voltage (V). P-P The power generation efficiency was also enhanced, resulting in a step improvement.

[0053] like Figure 2 As shown, Figure 2 When the external vibration frequency is 37Hz, the output power and peak output voltage (V) of the energy harvester in this embodiment are as follows: as the external vibration acceleration increases from 0 to 11.5 gravitational accelerations. P-P When the external vibration acceleration is less than 5.5g, the miniature magnet 2 and the metal solenoid 13 do not collide with the baffle 3. Their relative motion increases slowly with the increase of the external vibration acceleration. The peak output power and peak output voltage (V) of the energy harvester... P-P As the external acceleration increases, the output power increases slowly; when the external vibration acceleration reaches 5.5g, the micromagnet 2 collides with the baffle 3, and the reciprocating relative motion increases sharply, resulting in a surge in output power and peak output voltage (V). P-P A step change occurs, with the output power P increasing from 1.6uW to 15.6uW, and the peak voltage (V)... P-P The voltage was increased from 7mv to 23.8mv.

[0054] Furthermore, such as Figure 3 As shown, Figure 3 When the external vibration acceleration is 1g, the peak output power and peak output voltage (V) of the energy harvester in this embodiment are as follows: when the external vibration frequency is 17-47Hz. P-P ).

[0055] Further preferably, it also includes an extended silicon substrate, which is etched with cavities that allow the micromagnet 2 to move freely. The extended silicon substrate extends and supports the space between the upper silicon substrate 11 and the lower silicon substrate 12, and is used to extend the height of the cavity 4 formed between the upper silicon substrate 11 and the lower silicon substrate 12. The number and thickness of the extended silicon substrate can be adjusted according to the diameter of the micromagnet 2. Optionally, when the total height of the cavity 4 formed between the upper silicon substrate 11 and the lower silicon substrate 12 is sufficient for the micromagnet 2 to move freely, the extended silicon substrate can be omitted.

[0056] Further, when it is necessary to expand the cavity 4 formed between the upper silicon substrate 11 and the lower silicon substrate 12 to a high degree, the expansion silicon substrate is further provided with a through hole for connecting the upper silicon substrate 11 and the lower silicon substrate 12. Through the upper and lower alignment of the through hole between the upper silicon substrate 11, the expansion silicon substrate and the lower silicon substrate 12, the metal solenoid coil 13 can be threaded through the solenoid slot of the upper silicon substrate 11, the through hole, the through hole on the expansion silicon substrate, the through hole on the lower silicon substrate 12 and the solenoid slot thereof through the micro-casting process.

[0057] The solenoid coil is formed on the silicon substrate through the micro-casting process, and the micro-magnet is arranged in the cavity of the silicon substrate, so as to realize the electromagnetic vibration energy harvester based on the 3D solenoid coil which can be integrated on the silicon substrate, and solve the problems of large size and difficult mass production of the electromagnetic vibration energy harvester in the prior art.

[0058] Embodiment two:

[0059] Based on embodiment one, the embodiment provides an electromagnetic vibration energy harvester integrated on a silicon substrate, as shown in Figure 4 and Figure 5 The difference between the embodiment and embodiment one is that the solenoid coil 1 on the silicon substrate of the embodiment is a double-layer solenoid coil on the silicon substrate, and the micro-magnet 2 and the baffle 3 have the same structure as those in embodiment one, and the embodiment will not be described here.

[0060] The solenoid coil 1 on the silicon substrate of the embodiment includes an external upper silicon substrate 11, an external lower silicon substrate 12, an external metal solenoid coil 13, an electrode 14, an internal upper silicon substrate 15, an internal lower silicon substrate 16 and an internal metal solenoid coil 17.

[0061] The one side of the external upper silicon substrate 11 is engraved with an external solenoid slot and an electrode slot; the one side of the internal upper silicon substrate 15 is engraved with an internal solenoid slot, and the other side is engraved with a cavity for allowing the micro-magnet 2 to move freely; the one side of the internal lower silicon substrate 16 is engraved with an internal solenoid slot, and the other side is engraved with a cavity for allowing the micro-magnet 2 to move freely; and the one side of the external lower silicon substrate 12 is engraved with an external solenoid slot and an electrode slot.

[0062] The external metal solenoid coil 13 is specifically a micro-cast metal solenoid coil, which is threaded through the external solenoid slot of the external upper silicon substrate 11 and the external solenoid slot of the external lower silicon substrate 11 through the micro-casting process.

[0063] The internal metal solenoid coil 17 is specifically a micro-cast metal solenoid coil, which is threaded through the internal solenoid slot of the internal upper silicon substrate 15 and the internal solenoid slot of the internal lower silicon substrate 16 through the micro-casting process.

[0064] Further, the external upper silicon substrate 11, the external lower silicon substrate 12, the internal upper silicon substrate 15 and the internal lower silicon substrate 16 are also provided with through holes which are in communication with each other, so that the outer metal solenoid coil 13 is threaded through the solenoid grooves of the external upper silicon substrate 11 and the external lower silicon substrate 12 by means of the micro-casting process through the through holes of the external upper silicon substrate 11, the internal upper silicon substrate 15, the internal lower silicon substrate 16 and the external lower silicon substrate 12, and the inner metal solenoid coil 17 is threaded through the solenoid grooves of the internal upper silicon substrate 15 and the internal lower silicon substrate 16 by means of the micro-casting process through the through holes of the internal upper silicon substrate 15 and the internal lower silicon substrate 16.

[0065] The electrode 14 is also formed in the electrode grooves of the external upper silicon substrate 11 and the external lower silicon substrate 12 by means of the micro-casting process, for subsequent output of electric energy.

[0066] Similarly, the further preferred embodiment of the present application also includes an extension silicon substrate, which is engraved with cavities for allowing the free movement of the micro-magnet 2, and which is threaded between the internal upper silicon substrate 15 and the internal lower silicon substrate 16 for extending the height of the cavity 4 formed between the internal upper silicon substrate 15 and the internal lower silicon substrate 16, and the number and thickness of the extension silicon substrate can be adjusted according to the diameter of the micro-magnet 2, and optionally, when the total height of the cavity 4 formed between the internal upper silicon substrate 15 and the internal lower silicon substrate 16 is sufficient for the free movement of the micro-magnet 2, the extension silicon substrate can be omitted.

[0067] Further, when the extension silicon substrate is needed to extend the height of the cavity 4 formed between the internal upper silicon substrate 15 and the internal lower silicon substrate 16, the extension silicon substrate is also provided with through holes for connecting the internal upper silicon substrate 15 and the internal lower silicon substrate 16, and by means of the up-and-down alignment of the through holes between the external upper silicon substrate 11, the internal upper silicon substrate 15, the extension silicon substrate, the internal lower silicon substrate 16 and the external lower silicon substrate 12, the outer metal solenoid coil 13 can be threaded through the outer solenoid grooves of the external upper silicon substrate 11, the through holes thereof, the through holes of the internal upper silicon substrate 15, the through holes of the extension silicon substrate, the through holes of the internal lower silicon substrate 16, the through holes of the external lower silicon substrate 12 and the outer solenoid grooves thereof by means of the micro-casting process, and the inner metal solenoid coil 17 can be threaded through the inner solenoid grooves of the internal upper silicon substrate and the through holes thereof, the through holes of the extension silicon substrate, the through holes of the internal lower silicon substrate 16 and the inner solenoid grooves thereof by means of the micro-casting process.

[0068] The working principle of the vibration energy harvester of the embodiment is as follows: when external vibration occurs, the micro-magnet 2 is excited by the external excitation to reciprocally move relative to the outer metal solenoid 13 and the inner metal solenoid 17 in the cavity 4. When the vibration gradually becomes stronger, the reciprocating relative motion of the micro-magnet 2 to the outer metal solenoid 13 and the inner metal solenoid 17 also gradually becomes stronger, and the output power and the voltage peak value (V P-P ) outputted also gradually become stronger. When the external vibration is large enough, the micro-magnet 2 collides with the baffle 3, the baffle 3 applies a collision force to the micro-magnet 2 in the opposite direction of the relative motion direction of the micro-magnet 2, thereby enhancing the reciprocating relative motion of the micro-magnet 2 to the outer metal solenoid 13 and the inner metal solenoid 17, and the output power and the voltage peak value (V P-P ) outputted are also enhanced, a step occurs, and the power generation efficiency is greatly improved.

[0069] Embodiment Three

[0070] Based on Embodiment One and Embodiment Two, the embodiment provides a preparation method of the electromagnetic vibration energy harvesting integrated on a silicon substrate. Taking the single-layer silicon substrate solenoid as an example, the preparation method comprises the following steps:

[0071] Through photoetching and etching on a double-sided silicon oxide wafer, a cavity is formed on one surface of the double-sided silicon oxide wafer, and a solenoid slot, an electrode slot and a through hole are formed on the other surface, so as to prepare an upper silicon substrate and a lower silicon substrate;

[0072] The prepared upper silicon substrate and the lower silicon substrate are aligned;

[0073] The aligned upper silicon substrate and the lower silicon substrate are cast and filled by using a micro-casting process, so as to form a micro-cast metal solenoid and further form a silicon substrate solenoid;

[0074] The micro-magnet is placed in the cavity formed by the upper silicon substrate and the lower silicon substrate;

[0075] Baffles are arranged at both ends of the silicon substrate solenoid.

[0076] The method further comprises the step of preparing an extended silicon substrate, and the prepared extended silicon substrate is placed between the upper silicon substrate and the lower silicon substrate, so as to expand the height of the cavity formed by the upper silicon substrate and the lower silicon substrate through the extended silicon substrate.

[0077] The preparation of the extended silicon substrate specifically comprises: through photoetching on a silicon wafer, a through hole connected with the upper silicon substrate and the lower silicon substrate is formed on the silicon wafer, and a cavity allowing the micro-magnet to move freely is formed.

[0078] The above preparation process is described below by taking a specific example, wherein the preparation processes of the upper silicon substrate and the lower silicon substrate are the same, as follows:Figure 6 As shown in

[0079] As shown in Figure 6 (a) providing a double-sided silicon substrate, etching the oxide layer on the lower surface of the silicon substrate to form a cavity etching window;

[0080] As shown in Figure 6 (b) forming a cavity on the lower surface of the silicon substrate;

[0081] As shown in Figure 6 (c) etching the oxide layer on the upper surface of the silicon substrate to form etching windows of electrode grooves, spiral grooves and through holes;

[0082] As shown in Figure 6 (d) using photoresist as a mask, etching through holes with appropriate depth;

[0083] As shown in Figure 6 (e) removing the photoresist and using the oxide layer as a mask to form electrode grooves, spiral grooves and through holes;

[0084] As shown in Figure 6 (f) oxidizing and insulating the silicon substrate to form an upper silicon substrate and a lower silicon substrate;

[0085] As shown in Figure 6 (g) providing a silicon substrate and using photoresist as a mask;

[0086] As shown in Figure 6 (h) forming through holes and cavities through the silicon substrate on the upper surface of the silicon substrate;

[0087] As shown in Figure 6 (i) oxidizing and insulating the silicon substrate to form an extended silicon substrate;

[0088] As shown in Figure 6 (j) aligning the prepared upper silicon substrate, extended silicon substrate and lower silicon substrate in sequence;

[0089] As shown in Figure 6 (k) using micro-casting process to cast and fill the aligned upper silicon substrate, extended silicon substrate and lower silicon substrate to form a micro-cast metal spiral coil, wherein the filling material can be an alloy;

[0090] After casting, the spiral coil on the silicon substrate is formed, the micro-magnet is placed in the cavity formed by the upper silicon substrate, the extended silicon substrate and the lower silicon substrate, and the baffle is arranged at a specified distance on both ends of the spiral coil on the silicon substrate, thereby completing the preparation of the energy harvester.

[0091] The above application of specific examples to illustrate the present invention, is only used to help understand the present invention, and does not limit the present invention. For the skilled in the art to which the present invention belongs, according to the idea of the present invention, several simple deductions, deformation or replacement can be made.

Claims

1. An electromagnetic vibration energy harvester integrated on a silicon substrate, characterized in that, include: Solenoids, micromagnets, and baffles on a silicon substrate; The interior of the solenoid on the silicon substrate is a through hollow cavity that allows the micromagnet to slide freely. The micromagnet is slidably disposed in the cavity. When the micromagnet is excited by the outside, it reciprocates relative to the solenoid on the silicon substrate within the cavity. The baffle is disposed at both ends of the solenoid on the silicon substrate and applies a collision force to the micro magnet in the opposite direction of its movement. The on-silicon substrate solenoid is a double-layer on-silicon substrate solenoid, specifically including: An outer upper silicon substrate, one side of which is etched with an outer spiral groove and an electrode groove; An inner upper silicon substrate, one side of which is engraved with an inner spiral groove, and the other side is engraved with a cavity that allows the micromagnet to move freely. An inner lower silicon substrate, one side of which is engraved with an inner spiral groove, and the other side is engraved with a cavity that allows the micromagnet to move freely; An outer lower silicon substrate, one side of which is etched with an outer spiral groove and an electrode groove; An outer metal spiral coil, wherein the outer metal spiral coil extends through the outer spiral groove of the outer upper silicon substrate and the outer spiral groove of the outer lower substrate; An inner metal spiral coil, wherein the inner metal spiral coil passes through the inner spiral groove of the inner upper silicon substrate and the inner spiral groove of the inner lower silicon substrate; Electrodes, wherein the electrodes are disposed in electrode grooves of an outer upper silicon substrate and an outer lower silicon substrate; The outer upper silicon substrate, the outer lower silicon substrate, the inner upper silicon substrate, and the inner lower silicon substrate are each provided with interconnected through-holes.

2. The electromagnetic vibration energy harvester of claim 1, wherein, It also includes an extended silicon substrate, which is etched with cavities that allow the micromagnets to move freely. The extended silicon substrate extends through the hollow cavity of the solenoid coil on the silicon substrate to extend the height of the hollow cavity.

3. A method for manufacturing an electromagnetic vibration energy harvester integrated on a silicon substrate, applied to the manufacture of an electromagnetic vibration energy harvester according to any one of claims 1 to 2, characterized in that, Including the following steps: By photolithography and etching a double-sided silicon oxide wafer, a cavity is formed on one surface of the double-sided silicon oxide wafer, and a spiral groove, electrode groove and through hole are formed on the other surface, so as to prepare an upper silicon substrate and a lower silicon substrate. Align the prepared upper and lower silicon substrates vertically; The aligned upper and lower silicon substrates are cast and filled using a micro-casting process to form a micro-cast metal spiral coil, which is then further formed into a spiral coil on the silicon substrate. The micro magnet is placed in the cavity formed by the upper and lower silicon substrates; Baffles are provided at both ends of the solenoid coil on the silicon substrate.

4. The production method according to claim 3, wherein It also includes preparing an extended silicon substrate and placing the prepared extended silicon substrate between an upper silicon substrate and a lower silicon substrate to extend the height of the cavity formed by the upper silicon substrate and the lower silicon substrate through the extended silicon substrate.

5. The production method according to claim 4, wherein The preparation of the extended silicon substrate includes the following steps: Photolithography is performed on a silicon wafer to form through-holes that connect to the upper and lower silicon substrates, and to form cavities that allow the micromagnets to move freely.

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