Light emitting element, light emitting device, and method for manufacturing light emitting element

Abstract

The present invention provides a light-emitting element, a light-emitting device and a method for manufacturing a light-emitting element, which can improve the light-emitting characteristics. According to an embodiment, the light-emitting element includes: a light-reflecting component, a first and a second semiconductor laminate, a substrate and a wavelength conversion component. The light-reflecting component includes a first and a second region. The first semiconductor laminate is arranged between the first region and the second region, and emits a first light with a first peak wavelength. The second semiconductor laminate is arranged between the first semiconductor laminate and the second region, and emits a second light with a second peak wavelength. The substrate is arranged between the first and the second semiconductor laminates. The wavelength conversion component includes a first to a third part. The wavelength conversion component generates a third light with a third peak wavelength. A portion of the first region is between the first portion and a portion of the first semiconductor laminate. A portion of the second region is between the second portion and a portion of the second semiconductor laminate. The first light and the second light propagate through the substrate and are incident on the third portion.

Description

Technical Field

[0001] The present invention relates to a light emitting element, a light emitting device and a method for manufacturing the light emitting element. Background Art

[0002] Light-emitting elements are required to have good light-emitting properties.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: (Japan) Utility Model Registration No. 3197982

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a light-emitting element, a light-emitting device and a method for manufacturing the light-emitting element capable of improving light-emitting characteristics. Summary of the invention

[0008] Technical solutions for solving technical problems

[0009] According to one embodiment of the present invention, a light emitting element includes a light reflecting member, a first semiconductor laminate, a second semiconductor laminate, a substrate, and a wavelength conversion member. The light reflecting member includes a first region and a second region. The first semiconductor laminate is disposed between the first region and the second region, and emits a first light having a first peak wavelength. The second semiconductor laminate is disposed between the first semiconductor laminate and the second region, and emits a second light having a second peak wavelength different from the first peak wavelength. The substrate is disposed between the first semiconductor laminate and the second semiconductor laminate. The wavelength conversion member includes a first portion, a second portion, and a third portion disposed between the first portion and the second portion in a first direction from the first region to the second region and facing the substrate. The first light and the second light are incident on the wavelength conversion member. The wavelength conversion member generates a third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength. The reflectivity of the light reflecting member to the first light is higher than the reflectivity of the wavelength conversion member to the first light. The reflectivity of the light reflecting member to the second light is higher than the reflectivity of the wavelength conversion member to the second light. A portion of the first region is located between the first portion and a portion of the first semiconductor laminate in a second direction orthogonal to the first direction. A portion of the second region is located between the second portion and a portion of the second semiconductor laminate in the second direction. The first light and the second light propagate through the substrate and are incident on the third portion.

[0010] According to one embodiment of the present invention, a method for manufacturing a light-emitting element includes a step of preparing a first light-emitting portion including a first substrate and a first semiconductor laminate, and a second light-emitting portion including a second substrate and a second semiconductor laminate. The manufacturing method includes a step of bonding the first light-emitting portion and the second light-emitting portion so that the first substrate and the second substrate are located between the first semiconductor laminate and the second semiconductor laminate. The manufacturing method includes a step of forming a light-reflecting component covering the bonded first light-emitting portion and the second light-emitting portion. The manufacturing method includes a step of removing a portion of the light-reflecting component to expose the surfaces of the first substrate and the second substrate. The manufacturing method includes a step of forming a wavelength conversion component on the surfaces of the first substrate and the second substrate.

[0011] According to one embodiment of the present invention, a method for manufacturing a light-emitting element includes a process of preparing a first light-emitting portion and a second light-emitting portion. The first light-emitting portion includes: a first substrate, a first light-reflecting component, and a first semiconductor laminate disposed between the first substrate and the first light-reflecting component. The second light-emitting portion includes: a second substrate, a second light-reflecting component, and a second semiconductor laminate disposed between the second substrate and the second light-reflecting component. The manufacturing method includes a process of bonding the first light-emitting portion and the second light-emitting portion so that the first substrate and the second substrate are located between the first semiconductor laminate and the second semiconductor laminate. The manufacturing method includes a process of removing a portion of the first light-reflecting component and a portion of the second light-reflecting component to expose the surfaces of the first substrate and the second substrate. The manufacturing method includes a process of forming a wavelength conversion component on the surfaces of the exposed first substrate and the second substrate.

[0012] Effects of the Invention

[0013] According to one embodiment of the present invention, a light-emitting element, a light-emitting device, and a method for manufacturing a light-emitting element capable of improving light-emitting characteristics can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a schematic perspective view illustrating a light emitting element and a light emitting device according to the first embodiment.

[0015] Figure 2 is an example Figure 1 Schematic cross-sectional view of the light-emitting element and the light-emitting device of the first embodiment taken along line II-II.

[0016] Figure 3 is an example Figure 1 Schematic cross-sectional view of the light-emitting element and the light-emitting device of the first embodiment taken along line III-III.

[0017] Figure 4 is an example Figure 1 A schematic cross-sectional view of a light-emitting element and a light-emitting device according to a first embodiment of the present invention is shown in FIG.

[0018] Figure 5 is an example Figure 1 Schematic cross-sectional view of the light-emitting element and the light-emitting device of the first embodiment taken along line VV.

[0019] Figure 6 is an example Figure 1 Schematic cross-sectional view of the light-emitting element and the light-emitting device of the first embodiment taken along the line VI-VI.

[0020] Figure 7 Schematic cross-sectional views illustrating a light emitting element and a light emitting device according to the first embodiment.

[0021] Figure 8 Schematic cross-sectional views illustrating a light emitting element and a light emitting device according to the first embodiment.

[0022] Fig. 9 It is a schematic diagram illustrating the light emitting device according to the first embodiment.

[0023] Fig. 10A It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0024] Fig. 10B It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0025] Fig. 10C It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0026] Fig.11A It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0027] Fig. 11B It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0028] Fig.12 It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0029] Fig.13A It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0030] Fig. 13B It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0031] Fig.14 It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0032] Description of Reference Numerals

[0033] 10A, 10B first and second light emitting parts; 11 first semiconductor laminate; 11e first light emitting layer; 11f first reflection film; 11n first n-type semiconductor layer; 11p first p-type semiconductor layer; 12 second semiconductor laminate; 12e second light emitting layer; 12f second reflection film; 12n second n-type semiconductor layer; 12p second p-type semiconductor layer; 20 substrate; 21 first substrate; 22 second substrate; 25 intermediate layer; 30 wavelength conversion component; 30p second particle; 30q second component; 31-33 first to third parts; 40 light reflecting component; 40A, 40B first and second light reflecting components; 40p first particle; 40q first component; 41-45 first to fifth regions; 51n first n-side electrode; 51nP first n-side conductive component; 51na first electrode end; 51nb second electrode end; 51p first p-side electrode; 51pP first p-side conductive component; 51pc third electrode end; 51pd fourth electrode end; 52n second n-side electrode; 52nP second n-side conductive component; 52ne fifth electrode end; 52nf sixth electrode end; 52p second p-side electrode; 52pP second p-side conductive component; 52pg seventh electrode end; 52ph eighth electrode end; 60 mounting component; 61n first n-side conductive layer; 61nA first n-side connecting component; 61p first p-side conductive layer; 61pA first p-side connecting component; 62n second n-side conductive layer; 62nA second n-side connecting component; 62p second p-side conductive layer; 62pA second p-side connecting component; 65 mounting substrate portion; 70 driving circuit; 71~74 first to fourth wirings; 110, 111 light-emitting elements; 210, 211 light-emitting devices; ep1~ep4 first to fourth ends. DETAILED DESCRIPTION

[0034] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0035] It should be noted that the drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each part, the ratio of the size between the parts, etc. are not necessarily the same as the actual situation. In addition, even when the same part is represented, there is a case where the mutual size and ratio are represented differently due to the drawings.

[0036] It should be noted that in the present specification, the same reference numerals are used for the same main components as those described in the drawings that have already appeared, and the detailed description is appropriately omitted.

[0037] (First Embodiment)

[0038] Figure 1 It is a schematic perspective view illustrating a light emitting element and a light emitting device according to the first embodiment.

[0039] Figure 2 to Figure 6 Schematic cross-sectional views illustrating a light emitting element and a light emitting device according to the first embodiment.

[0040] Figure 2 Illustrated Figure 1 Section along line II-II. Figure 3 Illustrated Figure 1 III-III line section. Figure 4 Illustrated Figure 1 IV-IV line section. Figure 5 Illustrated Figure 1 VV line profile. Figure 6 Illustrated Figure 1 VI-VI line section.

[0041] like Figure 1 As shown, the light emitting device 210 includes a light emitting element 110 and a mounting component 60. The light emitting element 110 is disposed on the mounting component 60.

[0042] like Figure 2 As shown, the light emitting element 110 includes a light reflecting member 40 , a first semiconductor laminate 11 , a second semiconductor laminate 12 , a substrate 20 , and a wavelength converting member 30 .

[0043] The light reflecting member 40 includes a first region 41 and a second region 42. As described below, the light reflecting member 40 may also include a third region 43, a fourth region 44, and a fifth region 45.

[0044] The first semiconductor laminate 11 is provided between the first region 41 and the second region 42. The first semiconductor laminate 11 emits first light having a first peak wavelength.

[0045] The first semiconductor laminate 11 includes, for example, a first n-type semiconductor layer 11n, a first light emitting layer 11e, and a first p-type semiconductor layer 11p. The first p-type semiconductor layer 11p is provided between the first n-type semiconductor layer 11n and the first region 41. The first light emitting layer 11e is provided between the first n-type semiconductor layer 11n and the first p-type semiconductor layer 11p.

[0046] The second semiconductor laminate 12 is provided between the first semiconductor laminate 11 and the second region 42. The second semiconductor laminate 12 emits second light having a second peak wavelength. The second peak wavelength is different from the first peak wavelength.

[0047] The second semiconductor laminate 12 includes, for example, a second n-type semiconductor layer 12n, a second light emitting layer 12e, and a second p-type semiconductor layer 12p. The second p-type semiconductor layer 12p is provided between the second n-type semiconductor layer 12n and the second region 42. The second light emitting layer 12e is provided between the second n-type semiconductor layer 12n and the second p-type semiconductor layer 12p.

[0048] When current is supplied to the first semiconductor laminate 11, first light is emitted from the first light emitting layer 11e. When current is supplied to the second semiconductor laminate 12, second light is emitted from the second light emitting layer 12e. The first light is, for example, blue. The second light is, for example, green. The first peak wavelength is, for example, 430nm to 480nm. The second peak wavelength is, for example, 500nm to 540nm.

[0049] The substrate 20 is disposed between the first semiconductor laminate 11 and the second semiconductor laminate 12. In this example, the substrate 20 includes a first substrate 21 and a second substrate 22. The second substrate 22 is disposed between the first substrate 21 and the second semiconductor laminate 12. In this example, the second substrate 22 is in contact with the first substrate 21. For example, the surface of the second substrate 22 where the second semiconductor laminate 12 is not disposed is in contact with the surface of the first substrate 21 where the first semiconductor layer 11 is not disposed.

[0050] In one example, the first semiconductor laminate 11 and the second semiconductor laminate 12 are, for example, nitride semiconductors. The substrate 20 is, for example, sapphire. The first substrate 21 and the second substrate 22 are, for example, sapphire. The first semiconductor laminate 11 is epitaxially grown on the first substrate 21. The second semiconductor laminate 12 is epitaxially grown on the second substrate 22.

[0051] The first light emitted from the first light emitting layer 11e enters the first substrate 21 and propagates through the first substrate 21 and the second substrate 22. The second light emitted from the second light emitting layer 12e enters the second substrate 22 and propagates through the first substrate 21 and the second substrate 22.

[0052] The direction from the first region 41 to the second region 42 is defined as the first direction. The first direction is defined as the X-axis direction. A direction perpendicular to the X-axis direction is defined as the Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction.

[0053] As described above, the first semiconductor laminate 11 and the second semiconductor laminate 12 are provided between the first region 41 and the second region 42 in the X-axis direction.

[0054] On the other hand, the direction from the wavelength conversion member 30 to the first semiconductor laminate 11 intersects with the X-axis direction. The direction from the wavelength conversion member 30 to the second semiconductor laminate 12 intersects with the X-axis direction.

[0055] The wavelength conversion component 30 includes, for example, a first portion 31, a second portion 32, and a third portion 33. The third portion 33 is disposed between the first portion 31 and the second portion 32 in the X-axis direction (a first direction from the first region 41 to the second region 42). The third portion 33 is opposed to the substrate 20 (the first substrate 21 and the second substrate 22) in the Z-axis direction. The first light and the second light are incident on the wavelength conversion component 30. For example, the first light and the second light propagate through the substrate 20 and are incident on the third portion 33. The first light and the second light may also be incident on the first portion 31 and the second portion 32. The wavelength conversion component 30 generates a third light having a third peak wavelength. The third peak wavelength is different from the first peak wavelength and is also different from the second peak wavelength. The wavelength conversion component 30 contains, for example, a phosphor.

[0056] In one example, the first light is blue, the second light is green, and the third light is yellow. The light emitted from the wavelength conversion component 30 includes the first light, the second light, and the third light. The light emitted from the wavelength conversion component 30 (light emitted from the light emitting element 110) is, for example, white.

[0057] The reflectivity of the light reflecting member 40 to the first light is higher than the reflectivity of the wavelength converting member 30 to the first light. The reflectivity of the light reflecting member 40 to the second light is higher than the reflectivity of the wavelength converting member 30 to the second light. By making the reflectivity of the light reflecting member 40 high, the first light and the second light can be reflected by the light reflecting member 40 toward the substrate 20 side, propagated on the substrate 20, and thus efficiently incident on the wavelength converting member 30.

[0058] For example, the substrate 20 is in contact with the wavelength conversion member 30. For example, the substrate 20 is in contact with the third portion 33 of the wavelength conversion member 30. The first light and the second light propagating through the substrate 20 can be directly incident on the wavelength conversion member 30.

[0059] In the embodiment, a portion of the first region 41 is located between the first portion 31 and a portion of the first semiconductor laminate 11 in a second direction (the Z-axis direction in this example) orthogonal to the first direction. A portion of the second region 42 is located between the second portion 32 and a portion of the second semiconductor laminate 12 in the second direction (the Z-axis direction in this example).

[0060] like Figure 2As shown, for example, a portion of the first region 41 is located between the first portion 31 and the first light-emitting layer 11e in the Z-axis direction. As a result, the first light generated by the first light-emitting layer 11e can be suppressed from directly entering the wavelength conversion component 30. For example, a portion of the second region 42 is located between the second portion 32 and the second light-emitting layer 12e in the Z-axis direction. As a result, the second light generated by the second light-emitting layer 12e can be suppressed from directly entering the wavelength conversion component 30. A portion of the first region 41 may also be connected to the substrate 21, for example. As a result, the first light generated by the first semiconductor structure 11 can be suppressed from directly entering the wavelength conversion component 30. A portion of the second region 42 may also be connected to the substrate 22, for example. As a result, the second light generated by the second semiconductor structure 12 can be suppressed from directly entering the wavelength conversion component 30.

[0061] For example, consider the first reference example in which the first light-emitting layer 11e and the second light-emitting layer 12e are connected to the wavelength conversion component 30. In the first reference example, the first light generated by the first light-emitting layer 11e and the second light generated by the second light-emitting layer 12e are directly incident on the wavelength conversion component 30. In this case, when light of other colors is incident on two positions (for example, the first portion 31 and the second portion 32) of the wavelength conversion component 30, for example, blue light and green light are separated and emitted from the light-emitting element 110. Therefore, the blue light and the green light are not fully mixed, and the color of the light from the light-emitting element 110 is biased.

[0062] In contrast, in the embodiment, the first light and the second light are reflected and propagated inside the substrate 20. Thus, the fully mixed light enters the wavelength conversion member 30. Thus, light of a wide color range can be obtained. According to the embodiment, a light emitting element with improved light emitting characteristics can be provided.

[0063] In the embodiment, a portion of the first n-type semiconductor layer 11n and a portion of the second n-type semiconductor layer 12n may be in contact with the wavelength conversion member 30. The first light and the second light may propagate through the substrate 20, the first n-type semiconductor layer 11n, and the second n-type semiconductor layer 12n and enter the wavelength conversion member 30. In this case, the first light and the second light are reflected and propagated inside the substrate 20, and enter the wavelength conversion member 30 in a fully mixed state.

[0064] In the embodiment, a portion of the first region 41 may be located in the second direction (Z-axis direction) between the first portion 31 and at least a portion of the first semiconductor laminate 11. A portion of the second region 42 may be located in the second direction (Z-axis direction) between the second portion 32 and at least a portion of the second semiconductor laminate 12. In this case, it is possible to suppress the light from the light emitting layer from directly entering the wavelength conversion member 30.

[0065] For example, at least a portion of the first n-type semiconductor layer 11n is in contact with the first portion 31. A portion of the first region 41 is located between the first portion 31 and the first p-type semiconductor layer 11p in the second direction (e.g., the Z-axis direction). A portion of the first region 41 is located between the first portion 31 and the first light-emitting layer 11e in the second direction.

[0066] For example, at least a portion of the second n-type semiconductor layer 12n is in contact with the second portion 32. A portion of the second region 42 is located between the second portion 32 and the second p-type semiconductor layer 12p in the second direction (e.g., the Z-axis direction). A portion of the second region 42 is located between the second portion 32 and the second light-emitting layer 12e in the second direction.

[0067] like Figure 1 ,as well as Figures 4 to 6 As shown, the light reflecting component 40 may also include a third area 43 , a fourth area 44 and a fifth area 45 .

[0068] The first semiconductor laminate 11, the second semiconductor laminate 12, and the substrate 20 are located between the third region 43 and the fourth region 44 in the third direction. The third direction is orthogonal to the plane including the first direction and the second direction. The third direction is, for example, the Y-axis direction. The first semiconductor laminate 11, the second semiconductor laminate 12, and the substrate 20 are located between the wavelength conversion component 30 and the fifth region 45 of the light reflecting component 40 in the second direction (for example, the Z-axis direction).

[0069] The first light and the second light are reflected by the third region 43 , the fourth region 44 , and the fifth region 45 . The first light and the second light are prevented from being emitted to the outside via the light reflecting member 40 , and the first light and the second light propagate through the substrate 20 and enter the wavelength converting member 30 efficiently.

[0070] like Figure 2 and Figure 3 As shown, the light emitting element 110 further includes a first n-side electrode 51n and a first p-side electrode 51p. The first n-side electrode 51n is electrically connected to the first n-type semiconductor layer 11n. The first p-side electrode 51p is electrically connected to the first p-type semiconductor layer 11p.

[0071] In this example, the first n-side electrode 51n is electrically connected to the first n-type semiconductor layer 11n via the first n-side conductive member 51nP, and the first p-side electrode 51p is electrically connected to the first p-type semiconductor layer 11p via the first p-side conductive member 51pP.

[0072] At least a portion of the first n-side electrode 51n is exposed from the first region 41. At least a portion of the first n-side electrode 51n is not covered by the first region 41. At least a portion of the first p-side electrode 51p is exposed from the first region 41. At least a portion of the first p-side electrode 51p is not covered by the first region 41.

[0073] A current is supplied to the first semiconductor laminate 11 via the first n-side electrode 51n and the first p-side electrode 51p, and the first light is emitted from the first light emitting layer 11e.

[0074] like Figure 2 and Figure 3 As shown, the light emitting element 110 includes a second n-side electrode 52n and a second p-side electrode 52p. The second n-side electrode 52n is electrically connected to the second n-type semiconductor layer 12n. The second p-side electrode 52p is electrically connected to the second p-type semiconductor layer 12p.

[0075] In this example, the second n-side electrode 52n is electrically connected to the second n-type semiconductor layer 12n via a second n-side conductive member 52nP, and the second p-side electrode 52p is electrically connected to the second p-type semiconductor layer 12p via a second p-side conductive member 52pP.

[0076] At least a portion of the second n-side electrode 52n is exposed from the second region 42. At least a portion of the second n-side electrode 52n is not covered by the second region 42. At least a portion of the second p-side electrode 52p is exposed from the second region 42. At least a portion of the second p-side electrode 52p is not covered by the second region 42.

[0077] A current is supplied to the second semiconductor laminate 12 via the second n-side electrode 52n and the second p-side electrode 52p, and the first light is emitted from the second light emitting layer 12e.

[0078] In this example, the mounting component 60 includes a mounting substrate portion 65, a first n-side conductive layer 61n, a first p-side conductive layer 61p, a second n-side conductive layer 62n, and a second p-side conductive layer 62p. The first n-side conductive layer 61n, the first p-side conductive layer 61p, the second n-side conductive layer 62n, and the second p-side conductive layer 62p are provided on the mounting substrate portion 65.

[0079] A first n-side conductive layer 61n is provided between the mounting substrate portion 65 and the first n-side electrode 51n. A first p-side conductive layer 61p is provided between the mounting substrate portion 65 and the first p-side electrode 51p. A second n-side conductive layer 62n is provided between the mounting substrate portion 65 and the second n-side electrode 52n. A second p-side conductive layer 62p is provided between the mounting substrate portion 65 and the second p-side electrode 52p.

[0080] For example, the first n-side electrode 51n is electrically connected to the first n-side conductive layer 61n by a first n-side connecting member 61nA. The first p-side electrode 51p is electrically connected to the first p-side conductive layer 61p by a first p-side connecting member 61pA. The second n-side electrode 52n is electrically connected to the second n-side conductive layer 62n by a second n-side connecting member 62nA. The second p-side electrode 52p is electrically connected to the second p-side conductive layer 62p by a second p-side connecting member 62pA. The above-mentioned connecting members include, for example, solder and the like.

[0081] For example, current is supplied to the first semiconductor laminate 11 via the first n-side conductive layer 61n and the first p-side conductive layer 61p, and current is supplied to the second semiconductor laminate 12 via the second n-side conductive layer 62n and the second p-side conductive layer 62p.

[0082] like Figure 2 As shown, the first region 41 includes a first end ep1 and a second end ep2. The second end ep2 is located between the first end ep1 and the first portion 31 in the second direction (the Z-axis direction in this example).

[0083] The first n-side electrode 51n includes a first electrode end 51na and a second electrode end 51nb. The second electrode end 51nb is located between the first electrode end 51na and the first portion 31 in the second direction (Z-axis direction in this example).

[0084] The first electrode end 51na and the first end ep1 are located on the same plane. For example, the direction from the first electrode end 51na to the first end ep1 is along the first direction (X-axis direction).

[0085] like Figure 3 As shown, the first p-side electrode 51p includes a third electrode end 51pc and a fourth electrode end 51pd. The fourth electrode end 51pd is located between the third electrode end 51pc and the first portion 31 in the second direction (Z-axis direction in this example).

[0086] The third electrode end 51pc is located on the same plane as the first end ep1. For example, the direction from the third electrode end 51pc to the first end ep1 is along the first direction (X-axis direction).

[0087] like Figure 2 As shown, the second region 42 includes a third end ep3 and a fourth end ep4. The fourth end ep4 is located between the third end ep3 and the second portion 32 in the second direction (the Z-axis direction in this example).

[0088] The second n-side electrode 52n includes a fifth electrode end 52ne and a sixth electrode end 52nf. The sixth electrode end 52nf is located between the fifth electrode end 52ne and the second portion 32 in the second direction (Z-axis direction in this example).

[0089] The fifth electrode end 52ne and the third end ep3 are located on the same plane. For example, the direction from the fifth electrode end 52ne to the third end ep3 is along the first direction (X-axis direction).

[0090] like Figure 3 As shown, the second p-side electrode 52p includes a seventh electrode end 52pg and an eighth electrode end 52ph. The eighth electrode end 52ph is located between the seventh electrode end 52pg and the second portion 32 in the second direction (the Z-axis direction in this example).

[0091] The seventh electrode end 52pg and the third end ep3 are located on the same plane. For example, the direction from the seventh electrode end 52pg to the third end ep3 is along the first direction (X-axis direction).

[0092] Since the electrode end and the end of the light reflecting member 40 are located on the same plane, the end of the light emitting element 110 on the fifth region 45 side is substantially flat. This makes it easy to mount the light emitting element 110 on the mounting member 60 .

[0093] like Figure 1 , Figure 2 and Figure 3 As shown in FIG. 1 , the second n-side electrode 52n and the second p-side electrode 52p are located on the side surface of the light reflecting member 40 and are located closer to the mounting member 60. Figure 2 and Figure 3 As shown, the first n-side electrode 51n and the first p-side electrode 51p are located on the side surface of the light reflecting member 40 and are offset toward the mounting member 60. This makes it easy to mount the light emitting element 110 on the mounting member 60.

[0094] like Figure 2 and Figure 3 As shown in the example, the light emitting element 110 may also include a first reflective film 11f. The first reflective film 11f is provided between the first region 41 and at least a portion of the first semiconductor laminate 11 in the first direction (X-axis direction). The light emitting element 110 may also include a second reflective film 12f. The second reflective film 12f is provided between the second region 42 and at least a portion of the second semiconductor laminate 12 in the first direction (X-axis direction). The first reflective film 11f and the second reflective film 12f contain, for example, at least one metal selected from the group consisting of Ag and Al. The light emitted from the light emitting layer is efficiently reflected toward the substrate 20 by the above-mentioned reflective film.

[0095] like Figure 2 As shown, the light reflecting member 40 includes: a plurality of first particles 40p, and a first member 40q disposed around the plurality of first particles 40p. The plurality of first particles 40p, for example, contain at least one oxide selected from the group consisting of titanium dioxide and aluminum oxide. The first member 40q, for example, contains at least one resin selected from the group consisting of silicone resin, acrylic resin, and epoxy resin. The first member 40q may also contain glass or ceramics, for example.

[0096] like Figure 2 As shown, the wavelength conversion member 30 includes a plurality of second particles 30p and a second member 30q disposed around the plurality of second particles 30p. The plurality of second particles 30p contain, for example, a fluorescent substance. The second member 30q contains, for example, at least one resin selected from the group consisting of silicone resin, acrylic resin, and epoxy resin.

[0097] In the light emitting element 110, the first substrate 21 and the second substrate 22 are directly bonded. For example, high heat dissipation is easily obtained by directly bonding the first substrate 21 and the second substrate 22. In the embodiment, the boundary between the first substrate 21 and the second substrate 22 may not be clear. For example, room temperature bonding such as atomic diffusion bonding or surface activation bonding is used in direct bonding.

[0098] As described below, in the embodiment, another layer may be provided between the first substrate 21 and the second substrate 22 .

[0099] Figure 7 and Figure 8 Schematic cross-sectional views illustrating a light emitting element and a light emitting device according to the first embodiment.

[0100] like Figure 7 and Figure 8 As shown, the light emitting element 111 of the first embodiment also includes: a light reflecting member 40, a first semiconductor laminate 11, a second semiconductor laminate 12, a substrate 20, and a wavelength conversion member 30. The substrate 20 includes an intermediate layer 25 in addition to the first substrate 21 and the second substrate 22. In the light reflecting member 40, the first semiconductor laminate 11, the second semiconductor laminate 12, and the wavelength conversion member 30 in the light emitting element 111, the structures related to the above components in the light emitting element 110 can be applied. Next, an example of the substrate 20 of the light emitting element 111 will be described.

[0101] In the light emitting element 111, the second substrate 22 is provided between the first substrate 21 and the second semiconductor laminate 12. The intermediate layer 25 is provided between the first substrate 21 and the second substrate 22.

[0102] For example, the intermediate layer 25 bonds the first substrate 21 and the second substrate 22 together. The intermediate layer 25 is, for example, an adhesive layer. The intermediate layer 25 contains, for example, a resin. For example, a portion of the intermediate layer 25 is in contact with the wavelength conversion member 30 .

[0103] The first light emitted from the first light emitting layer 11e passes through the first substrate 21 and enters the intermediate layer 25. The second light emitted from the second light emitting layer 12e passes through the second substrate 22 and enters the intermediate layer 25. The first light and the second light propagate through the intermediate layer 25 and enter the wavelength conversion member 30 in a well-mixed state. According to the embodiment, a light emitting element having improved light emitting characteristics can be provided.

[0104] In the embodiment, the absolute value of the difference between the refractive index of the intermediate layer 25 for the first light and the refractive index of the first substrate 21 for the first light is smaller than the absolute value of the difference between the refractive index of the first semiconductor laminate 11 for the first light and the refractive index of the first substrate 21 for the first light. By making the refractive index difference between the intermediate layer 25 and the first substrate 21 smaller, for example, it is possible to suppress absorption of light at the interface between the intermediate layer 25 and the first substrate 21. It is possible to suppress light loss and obtain high efficiency.

[0105] For example, the absolute value of the difference between the refractive index of the intermediate layer 25 for the second light and the refractive index of the second substrate 22 for the second light is smaller than the absolute value of the difference between the refractive index of the second semiconductor laminate 12 for the second light and the refractive index of the second substrate 22 for the second light. By making the refractive index difference between the intermediate layer 25 and the second substrate 22 smaller, for example, it is possible to suppress absorption of light at the interface between the intermediate layer 25 and the second substrate 22. It is possible to suppress light loss and obtain high efficiency.

[0106] Fig. 9 It is a schematic diagram illustrating the light emitting device according to the first embodiment.

[0107] like Fig. 9 As shown, the light emitting device 211 includes a light emitting element 110 and a driving circuit 70. The light emitting device 211 may also include a light emitting element 111 and a driving circuit 70.

[0108] The drive circuit 70 is electrically connected to the first semiconductor laminate 11 and the second semiconductor laminate 12. For example, the drive circuit 70 is electrically connected to the first n-side electrode 51n through the first wiring 71. The drive circuit 70 is electrically connected to the first p-side electrode 51p through the second wiring 72. The drive circuit 70 is electrically connected to the second n-side electrode 52n through the third wiring 73. The drive circuit 70 is electrically connected to the second p-side electrode 52p through the fourth wiring 74.

[0109] The driving circuit 70 supplies a first current to the first semiconductor laminate 11 and a second current to the second semiconductor laminate 12. The driving circuit 70 can independently change the current values ​​of the first current and the second current. By independently driving the first semiconductor laminate 11 and the second semiconductor laminate 12, a desired color can be easily obtained.

[0110] (Second Embodiment)

[0111] This embodiment mode relates to a method for manufacturing a light emitting element.

[0112] Figure 10A to Figure 10C , Fig.11A and Fig. 11B It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0113] like Fig. 10A As shown, a first light emitting section 10A and a second light emitting section 10B are prepared. The first light emitting section 10A includes a first substrate 21 and a first semiconductor laminate 11. The second light emitting section 10B includes a second substrate 22 and a second semiconductor laminate 12.

[0114] like Fig. 10B As shown, the first light emitting portion 10A and the second light emitting portion 10B are bonded so that the first substrate 21 and the second substrate 22 are located between the first semiconductor laminate 11 and the second semiconductor laminate 12. For example, the first substrate 21 and the second substrate 22 are bonded by direct bonding under pressure at room temperature.

[0115] like Fig. 10C As shown in FIG. 1 , a light reflecting member 40 is formed to integrally cover the joined first light emitting portion 10A and second light emitting portion 10B.

[0116] like Fig.11A As shown in FIG. 1 , a first n-side conductive component 51nP, a first n-side electrode 51n, a second n-side conductive component 52nP, and a second n-side electrode 52n are formed. Figure 3The illustrated first p-side conductive component 51pP, the first p-side electrode 51p, the second p-side conductive component 52pP, and the second p-side electrode 52p. For example, a portion of the light reflecting component 40 is removed to expose the first n-type semiconductor layer 11n and the second n-type semiconductor layer 12n from the light reflecting component 40. The first n-side conductive component 51nP connected to the first n-type semiconductor layer 11n exposed from the light reflecting component 40 is formed. The second n-side conductive component 52nP connected to the second n-type semiconductor layer 12n exposed from the light reflecting component 40 is formed. The first n-side electrode 51 connected to the light reflecting component 40 and connected to the first n-side conductive component 51nP is formed. The second n-side electrode 52 connected to the light reflecting component 40 and connected to the second n-side conductive component 52nP is formed.

[0117] like Fig.11A As shown, a portion of the light reflecting member 40 is removed to expose the surfaces of the first substrate 21 and the second substrate 22. The removal of the portion of the light reflecting member 40 can be performed, for example, by polishing. At this time, the light reflecting member 40 located at the portion where the first n-side electrode 51n and the second n-side electrode 52n are provided is left.

[0118] like Fig. 11B As shown, the wavelength conversion member 30 is formed on the surfaces of the first substrate 21 and the second substrate 22 exposed from the light reflecting member 40. In this case, the wavelength conversion member 30 may be provided continuously with the surfaces of the first substrate 21 and the second substrate 22 and the surface of the light reflecting member 40.

[0119] Through the above description, the light emitting element 110 can be obtained. According to the embodiment, a method for manufacturing a light emitting element capable of improving light emitting characteristics can be provided.

[0120] Fig.12 It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0121] like Fig.12 As shown, after the first light emitting section 10A and the second light emitting section 10B are prepared, the intermediate layer 25 is inserted between the first substrate 21 and the second substrate 22. For example, the first substrate 21 and the second substrate 22 are bonded together using a resin as the intermediate layer 25.

[0122] Afterwards, conduct Fig. 10C , Fig.11A as well as Fig. 11B The process of the related description is performed. Thus, the light emitting element 111 can be obtained. According to the embodiment, a method for manufacturing a light emitting element capable of improving light emitting characteristics can be provided.

[0123] Fig.13A and Fig. 13BIt is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0124] like Fig.13A As shown, a first light emitting unit 10A and a second light emitting unit 10B are prepared. The first light emitting unit 10A includes: a first substrate 21, a first light reflecting member 40A, and a first semiconductor laminate 11 provided between the first substrate 21 and the first light reflecting member 40A. The first light reflecting member 40A covers the other surfaces of the first substrate 21 except the surface on the side opposite to the surface provided with the first semiconductor laminate 11. The second light emitting unit 10B includes: a second substrate 22, a second light reflecting member 40B, and the second semiconductor laminate 12 provided between the second substrate 22 and the second light reflecting member 40B. The second light reflecting member 40B covers the other surfaces of the second substrate 22 except the surface on the side opposite to the surface provided with the second semiconductor laminate 12.

[0125] like Fig. 13B As shown, the first light emitting portion 10A and the second light emitting portion 10B are bonded so that the first substrate 21 and the second substrate 22 are located between the first semiconductor laminate 11 and the second semiconductor laminate 12. At this time, the first substrate 21 and the second substrate are bonded by direct bonding. The first light reflecting member 41 and the second light reflecting member 42 may also be bonded by direct bonding.

[0126] Afterwards, proceed as above Fig.11A For example, a first n-side conductive component 51nP, a first n-side electrode 51n, a second n-side conductive component 52nP, a second n-side electrode 52n, a first p-side conductive component 51pP, a first p-side electrode 51p, a second p-side conductive component 52pP, and a second p-side electrode 52p are formed.

[0127] Afterwards, proceed as above Fig.11A and Fig. 11B For example, a portion of the first light reflecting member 40A and a portion of the second light reflecting member 40B are removed to expose the surfaces of the first substrate 21 and the second substrate 22. The wavelength conversion member 30 is formed on the exposed surfaces of the first substrate 21 and the second substrate 22. By this method, the light emitting element 110 can also be obtained. According to the embodiment, light of a wide color gamut can be obtained, and a method for manufacturing a light emitting element that can improve light emitting characteristics can be provided.

[0128] Fig.14 It is a schematic cross-sectional view illustrating a method for manufacturing a light emitting element according to the second embodiment.

[0129] like Fig.14As shown, after preparing the first light emitting unit 10A including the first light reflecting member 40A and the second light emitting unit 10B including the second light reflecting member 40B, the intermediate layer 25 is inserted between the first substrate 21 and the second substrate 22. For example, the first substrate 21 and the second substrate 22 are bonded by using a resin as the intermediate layer 25.

[0130] Afterwards, proceed as above Fig. 10C , Fig.11A and Fig. 11B Related steps. Thus, the light emitting element 111 can be obtained. According to the embodiment, light of a wide color range can be obtained, and a method for manufacturing a light emitting element capable of improving light emitting characteristics can be provided.

[0131] The light emitting element of the embodiment can be used in, for example, a backlight. The light emitting element of the embodiment can be used in, for example, a lighting device. According to the embodiment, light with good color mixing can be obtained. For example, a thin backlight can be obtained.

[0132] According to the embodiments, a light emitting element, a light emitting device, and a method for manufacturing a light emitting element capable of improving light emitting characteristics can be provided.

[0133] It should be noted that in the present application specification, "vertical" and "parallel" do not only mean vertical and parallel in a strict sense, but also include situations where there are differences in the manufacturing process, as long as they are basically vertical and basically parallel.

[0134] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to the above specific examples. For example, the specific structures of the substrate, semiconductor laminate, light reflecting component, wavelength conversion component, and electrode included in the light emitting element are all included in the scope of the present invention as long as the technicians in the technical field can implement the present invention in the same way by appropriately selecting from the known range and can obtain the same effect.

[0135] Furthermore, any combination of two or more main components of each specific example within a technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

[0136] In addition, based on the above-mentioned light-emitting element and its manufacturing method as an embodiment of the present invention, all light-emitting elements and their manufacturing methods that can be implemented by those skilled in the art by appropriately changing the design also belong to the scope of the present invention as long as they include the gist of the present invention.

[0137] Furthermore, within the conceptual scope of the present invention, those skilled in the art will conceive of various changes or modifications, and the above-mentioned changes or modifications are of course considered to be within the technical scope of the present invention.

Claims

1. A light emitting element, characterized in that: have: A light reflecting member including a first region and a second region; A first semiconductor laminate is provided between the first region and the second region and emits first light having a first peak wavelength; a second semiconductor laminate disposed between the first semiconductor laminate and the second region and emitting second light having a second peak wavelength different from the first peak wavelength; a substrate disposed between the first semiconductor laminate and the second semiconductor laminate; a wavelength conversion member, comprising: a first portion, a second portion, and a third portion disposed between the first portion and the second portion in a first direction from the first region to the second region and opposed to the substrate, into which the first light and the second light are incident, and generates third light having a third peak wavelength different from the first peak wavelength and the second peak wavelength; The reflectivity of the light reflecting member to the first light is higher than the reflectivity of the wavelength converting member to the first light, The reflectivity of the light reflecting member to the second light is higher than the reflectivity of the wavelength converting member to the second light, A portion of the first region is located between the first portion and a portion of the first semiconductor laminate in a second direction orthogonal to the first direction. A portion of the second region is located between the second portion and a portion of the second semiconductor laminate in the second direction, The first light and the second light propagate through the substrate and are incident on the third portion.

2. The light emitting element according to claim 1, wherein The light reflecting component further includes a third area, a fourth area and a fifth area, The first semiconductor laminate, the second semiconductor laminate, and the substrate are located between the third region and the fourth region in a third direction orthogonal to a plane including the first direction and the second direction. The first semiconductor laminate, the second semiconductor laminate, and the substrate are located between the wavelength conversion member and the fifth region in the second direction.

3. The light emitting element according to claim 1, wherein The first semiconductor laminate and the second semiconductor laminate are nitride semiconductors. The substrate is sapphire.

4. The light emitting element according to claim 1, wherein The first semiconductor laminate comprises: a first n-type semiconductor layer; a first p-type semiconductor layer, disposed between the first n-type semiconductor layer and the first region; A first light emitting layer, which is disposed between the first n-type semiconductor layer and the first p-type semiconductor layer; At least a portion of the first n-type semiconductor layer is in contact with the first portion, The portion of the first region is located between the first portion and the first p-type semiconductor layer in the second direction.

5. The light emitting element according to claim 4, wherein: In addition, it has: a first n-side electrode electrically connected to the first n-type semiconductor layer; a first p-side electrode electrically connected to the first p-type semiconductor layer; At least a portion of the first n-side electrode is exposed from the first region, At least a portion of the first p-side electrode is exposed from the first region.

6. The light emitting element according to claim 5, wherein: The first region includes a first end and a second end, The second end is located between the first end and the first portion in the second direction, The first n-side electrode includes a first electrode end and a second electrode end, The second electrode end is located between the first electrode end and the first portion in the second direction, The first electrode end portion and the first end portion are located on the same plane.

7. The light emitting element according to claim 6, wherein: The first p-side electrode includes a third electrode end and a fourth electrode end, The fourth electrode end is located between the third electrode end and the first portion in the second direction, The third electrode end portion and the first end portion are located on the same plane.

8. The light-emitting element according to any one of claims 1 to 7, wherein The second semiconductor laminate comprises: a second n-type semiconductor layer; a second p-type semiconductor layer disposed between the second n-type semiconductor layer and the second region; a second light emitting layer, disposed between the second n-type semiconductor layer and the second p-type semiconductor layer; At least a portion of the second n-type semiconductor layer is in contact with the second portion, The portion of the second region is located between the second portion and the second p-type semiconductor layer in the second direction.

9. The light emitting element according to claim 8, wherein: In addition, it has: a second n-side electrode electrically connected to the second n-type semiconductor layer; a second p-side electrode electrically connected to the second p-type semiconductor layer; At least a portion of the second n-side electrode is exposed from the second region, At least a portion of the second p-side electrode is exposed from the second region.

10. The light emitting element according to claim 9, wherein The second region includes a third end and a fourth end, The fourth end is located between the third end and the second portion in the second direction, The second n-side electrode includes a fifth electrode end and a sixth electrode end, The sixth electrode end is located between the fifth electrode end and the second portion in the second direction, The fifth electrode end portion and the third electrode end portion are located on the same plane.

11. The light emitting element according to claim 10, wherein: The second p-side electrode includes a seventh electrode end and an eighth electrode end, The eighth electrode end is located between the seventh electrode end and the second portion in the second direction, The seventh electrode end portion and the third end portion are located on the same plane.

12. The light-emitting element according to any one of claims 1 to 7, wherein The substrate comprises: a first substrate; A second substrate disposed between the first substrate and the second semiconductor laminate; The second substrate is connected to the first substrate.

13. The light-emitting element according to any one of claims 1 to 7, wherein The substrate comprises: a first substrate; A second substrate disposed between the first substrate and the second semiconductor laminate; an intermediate layer disposed between the first substrate and the second substrate; An absolute value of a difference between a refractive index of the intermediate layer for the first light and a refractive index of the first substrate for the first light is smaller than an absolute value of a difference between a refractive index of the first semiconductor laminate for the first light and the refractive index of the first substrate for the first light.

14. A light emitting device, characterized in that: have: The light-emitting element according to any one of claims 1 to 13; Driving circuit; The driving circuit supplies a first current to the first semiconductor laminate and supplies a second current to the second semiconductor laminate. The first current and the second current can be changed independently.

15. A method for manufacturing a light emitting element, characterized in that: have: A step of preparing a first light emitting portion including a first substrate and a first semiconductor laminate, and a second light emitting portion including a second substrate and a second semiconductor laminate; The step of bonding the first light emitting portion and the second light emitting portion so that the first substrate and the second substrate are located between the first semiconductor laminate and the second semiconductor laminate; forming a light reflecting member covering the first light emitting portion and the second light emitting portion that are bonded together; a step of removing a portion of the light reflecting member to expose the surfaces of the first substrate and the second substrate; forming a wavelength conversion component on the surfaces of the first substrate and the second substrate, The light reflecting component includes a first area and a second area; The wavelength conversion member includes a first portion, a second portion, and a third portion disposed between the first portion and the second portion in a first direction from the first region to the second region and facing the substrate. A portion of the first region is located between the first portion and a portion of the first semiconductor laminate in a second direction orthogonal to the first direction. A portion of the second region is located between the second portion and a portion of the second semiconductor laminate in the second direction.

16. A method for manufacturing a light emitting element, characterized in that: have: A step of preparing a first light emitting unit and a second light emitting unit, wherein the first light emitting unit includes a first substrate, a first light reflecting component, and a first semiconductor laminate disposed between the first substrate and the first light reflecting component, and the second light emitting unit includes a second substrate, a second light reflecting component, and a second semiconductor laminate disposed between the second substrate and the second light reflecting component; The step of bonding the first light emitting portion and the second light emitting portion so that the first substrate and the second substrate are located between the first semiconductor laminate and the second semiconductor laminate; a step of removing a portion of the first light reflecting member and a portion of the second light reflecting member to expose the surfaces of the first substrate and the second substrate; forming a wavelength conversion member on the exposed surfaces of the first substrate and the second substrate, the wavelength conversion member including a first portion, a second portion, and a third portion disposed between the first portion and the second portion in a first direction from the first light reflecting member to the second light reflecting member and facing the substrate, A portion of the first light reflecting member is located between the first portion and a portion of the first semiconductor laminate in a second direction orthogonal to the first direction; A portion of the second light reflecting member is located between the second portion and a portion of the second semiconductor laminate in the second direction.

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