Deposition mask and method of manufacturing the same

Abstract

A deposition mask and a method for manufacturing the deposition mask are provided. The method for manufacturing the deposition mask includes: preparing a mask target substrate having one surface on which a sacrificial layer pattern is formed and including a covered area covered by the sacrificial layer pattern and a plurality of exposed areas exposed by the sacrificial layer pattern; forming holes in the exposed areas of the mask target substrate by emitting laser light toward the mask target substrate; and removing the sacrificial layer pattern, wherein the sacrificial layer pattern has a reflectivity with respect to the laser light higher than that of the mask target substrate.

Description

[0001] This application claims the priority benefit of Korean Patent Application No. 10-2018-0170875 filed on December 27, 2018 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] The disclosure relates to a deposition mask and a method of manufacturing the deposition mask. Background Art

[0003] Organic light emitting display ("OLED") devices have attracted attention as next-generation display devices and as self-luminous display devices having desirable characteristics such as a wide viewing angle, a high contrast ratio, and a fast response speed.

[0004] Such an OLED device generally includes an intermediate layer including at least a light-emitting layer between counter electrodes. The electrodes and the intermediate layer may be formed using various methods (eg, a deposition method). Summary of the invention

[0005] The disclosed embodiments provide a method of manufacturing a deposition mask with improved manufacturing process efficiency.

[0006] The disclosed embodiments also provide a deposition mask manufactured using a method of manufacturing the deposition mask with improved manufacturing process efficiency.

[0007] According to a disclosed embodiment, a method for manufacturing a deposition mask includes: preparing a mask target substrate having a surface on which a sacrificial layer pattern is disposed, and including a covered area covered by the sacrificial layer pattern and a plurality of exposed areas exposed by the sacrificial layer pattern; forming holes in the exposed areas of the mask target substrate by emitting a laser toward the mask target substrate; and removing the sacrificial layer pattern, wherein a reflectivity of the sacrificial layer pattern with respect to the laser is higher than a reflectivity of the mask target substrate with respect to the laser.

[0008] In an embodiment, the step of preparing the mask target substrate may include disposing the sacrificial layer pattern in such a manner that the covered region of the mask target substrate completely surrounds each of the exposed regions of the mask target substrate.

[0009] In an embodiment, the step of forming the hole in the exposed region of the mask target substrate by emitting laser light toward the mask target substrate may include partially emitting laser light toward the covered region of the mask target substrate.

[0010] In an embodiment, reflectivity of the sacrificial layer pattern with respect to laser light may be about 70% or more.

[0011] In an embodiment, the laser light may have a single wavelength within a wavelength range from about 400 nanometers (nm) to about 600 nm.

[0012] In an embodiment, the mask target substrate may include an Invar alloy including nickel and iron.

[0013] In an embodiment, the sacrificial layer pattern may include at least one of aluminum, silver, and copper.

[0014] In an embodiment, the step of removing the sacrificial layer pattern may be performed using a first etchant.

[0015] In embodiments, an etching rate of the first etchant with respect to the sacrificial layer pattern may be higher than an etching rate of the first etchant with respect to the mask target substrate.

[0016] In an embodiment, after emitting laser light toward the mask target substrate, a dust oxide film may be formed on the inner surface of the cover region facing the exposed region and the upper and side surfaces of the sacrificial layer pattern.

[0017] In an embodiment, removing the sacrificial layer pattern may include removing a dust oxide film formed on a side surface and an upper surface of the sacrificial layer pattern.

[0018] In an embodiment, the step of removing the sacrificial layer pattern may be performed within 30 minutes, and the step of removing the sacrificial layer pattern includes removing a dust oxide film formed on a side surface and an upper surface of the sacrificial layer pattern.

[0019] In an embodiment, the method may further include removing a dust oxide film formed on an inner surface of the cover region facing the exposed region after removing the sacrificial layer pattern.

[0020] In an embodiment, the removal of the dust oxide film formed on the inner surface of the cover region facing the exposed region is performed using a second etchant that is different from the first etchant used to remove the sacrificial layer pattern.

[0021] In an embodiment, the step of providing the sacrificial layer pattern on the surface of the mask target substrate may be performed using at least one of a photolithography process, an electroplating process, and a sputtering process.

[0022] According to another disclosed embodiment, a deposition mask includes: a mask body including a plurality of hole regions spaced apart from each other and a lip region surrounding each of the hole regions; and a dust oxide film disposed on an inner surface of the lip region facing the hole region of the mask body.

[0023] In embodiments, the dust oxide film may not be disposed on the upper surface of the lip region of the mask main body.

[0024] In an embodiment, the mask main body may include an Invar alloy including nickel and iron, and the soot oxide film may include nickel oxide and iron oxide.

[0025] In an embodiment, the deposition mask may further include a residual film disposed on an upper surface of the lip region of the mask body and including a material different from that of the soot oxide film.

[0026] In an embodiment, the residual film may include at least one of aluminum, silver, and copper. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other features of the invention will become more apparent by describing in detail exemplary embodiments of the invention with reference to the accompanying drawings, in which:

[0028] Figure 1 is a perspective view of a deposition mask assembly according to an exemplary embodiment of the disclosure;

[0029] Figure 2 It is shown Figure 1 An enlarged plan view of the middle area A;

[0030] Figure 3 is along Figure 2 A cross-sectional view taken along line III-III′;

[0031] Figure 4 is a perspective view of a deposition mask according to an alternative exemplary embodiment;

[0032] Figure 5 is a cross-sectional view of a deposition mask according to another alternative exemplary embodiment;

[0033] Figure 6 is a cross-sectional view of a deposition mask according to yet another alternative exemplary embodiment;

[0034] Figure 7 is a cross-sectional view of a deposition mask according to yet another alternative exemplary embodiment;

[0035] Figure 8 is a flow chart illustrating a method of manufacturing a deposition mask according to an exemplary embodiment;

[0036] Fig. 9 is a plan view illustrating operations of a method of manufacturing a deposition mask according to an exemplary embodiment;

[0037] Fig.10 It is along Fig. 9 A cross-sectional view taken along line XX′;

[0038] Fig.11 is a graph showing reflectivity of metal according to wavelength of light;

[0039] Fig.12 is a cross-sectional view illustrating operations of a method of manufacturing a deposition mask according to an exemplary embodiment;

[0040] Fig.13A is a cross-sectional view illustrating operations of a method of manufacturing a deposition mask according to an exemplary embodiment;

[0041] Fig. 13B yes Fig.13A An enlarged view of the circled portion;

[0042] Fig.14 is a photograph showing a soot oxide film in operation of a method of manufacturing a deposition mask according to an exemplary embodiment;

[0043] FIG. 15A to FIG. 16B is a cross-sectional view illustrating operations of a method of manufacturing a deposition mask according to an exemplary embodiment;

[0044] Fig.17 is a graph showing the correlation between the intensity of laser light and the number of untreated holes;

[0045] Fig.18 is a graph showing the correlation between the intensity of laser light and etching efficiency;

[0046] Fig.19 is a flowchart illustrating an operation of forming a sacrificial layer according to an exemplary embodiment;

[0047] Fig. 20 It is shown Fig.19 A cross-sectional view of the operation shown in ;

[0048] Fig.21 is a cross-sectional view showing a sacrificial layer according to an exemplary embodiment;

[0049] Fig. 22 is a cross-sectional view showing a sacrificial layer according to an alternative exemplary embodiment;

[0050] Fig.23 is a flowchart illustrating an operation of forming a sacrificial layer according to an alternative exemplary embodiment;

[0051] Fig.24 It is shown Fig.23 A cross-sectional view of the operation shown in ;

[0052] Fig.25 is a flowchart illustrating an operation of forming a sacrificial layer according to another alternative exemplary embodiment; and

[0053] Fig.26 It is shown Fig.25 A cross-sectional view of the operation shown in FIG. DETAILED DESCRIPTION

[0054] The invention will now be more fully described below with reference to the accompanying drawings in which various embodiments are shown. However, the invention may be implemented in many different forms, and the invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art. The same reference numerals represent the same elements throughout.

[0055] It will be understood that when an element is referred to as being "on" another element, the element can be directly on the other element or intervening elements may exist between the element and the other element. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0056] It will be understood that, although the terms "first", "second", "third", etc., may be used to describe various elements, components, regions, layers, and / or parts herein, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings herein, the first "element", "component", "region", "layer", or "part" discussed below may be referred to as a second element, component, region, layer, or part.

[0057] The terms used herein are only for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "one", "a kind of" and "the" are also intended to include plural forms including "at least one". "Or" means "and / or". "At least one of A and B" means "A and / or B". As used herein, the term "and / or" includes any combination and all combinations of one or more of the relevant listed items. It will also be understood that when the terms "include" and / or "comprising" and variations thereof are used in this specification, it is indicated that the features, regions, wholes, steps, operations, elements and / or components described are present, but the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or their groups is not excluded.

[0058] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as depicted in the accompanying drawings. It will be understood that, in addition to the orientation shown in the figures, relative terms are intended to include different orientations of the device. For example, if the device in one of the accompanying drawings is turned over, the element described as being on the "lower" side of the other element will be positioned on the "upper" side of the other element. Therefore, depending on the specific orientation of the accompanying drawings, the exemplary term "lower" may include both "lower" and "upper" orientations. Similarly, if the device in one of the accompanying drawings is turned over, the element described as being "below" or "under" the other element will then be positioned "above" the other element. Therefore, the exemplary terms "below..." or "under..." may include both upper and lower orientations.

[0059] Taking into account the problems associated with measurement of particular quantities and the measurement of errors (i.e., limitations of the measurement system), "about" or "approximately" as used herein are inclusive of the stated value and mean within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art.

[0060] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will also be understood that, unless explicitly defined as such herein, these terms, such as those defined in common dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and disclosure, and will not be interpreted in an idealized or overly formal sense.

[0061] Exemplary embodiments are described herein with reference to cross-sectional views as schematic diagrams of idealized embodiments. Therefore, variations in the shapes of the diagrams caused by, for example, manufacturing techniques and / or tolerances are to be expected. Therefore, the embodiments described herein should not be interpreted as being limited to the specific shapes of the regions shown here, but will include deviations in shapes caused by, for example, manufacturing. For example, a region shown or described as flat may generally have rough and / or nonlinear features. In addition, the sharp angles shown may be rounded. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the precise shapes of the regions and are not intended to limit the scope of the claims.

[0062] Hereinafter, exemplary embodiments of the invention will be described in detail with reference to the accompanying drawings.

[0063] Figure 1 is a perspective view of a deposition mask assembly according to an exemplary embodiment of the disclosure, Figure 2 yes Figure 1 An enlarged plan view of area A in FIG.

[0064] Exemplary embodiments of the deposition mask assembly may be used in a deposition process for depositing an organic material layer or an inorganic material layer, which is included not only in portable electronic devices such as mobile phones, smart phones, tablet personal computers ("PCs"), smart watches, watch phones, mobile communication terminals, electronic notebooks, electronic books, portable multimedia players ("PMPs"), navigation systems, and ultra-mobile PCs, but also in display devices such as televisions, laptop PCs, monitors, advertising panels, or the Internet of Things ("IoT"), etc. In an exemplary embodiment, for example, the deposition mask assembly may be used to deposit an organic emission layer or an organic thin film such as a hole injection / transport layer, an electron injection / transport layer, etc. in an organic light-emitting display device, and may be used for deposition of other organic films, inorganic films, metal patterns, etc. The deposition mask may be a fine metal mask ("FMM") having an opening portion having the same pattern as that of a thin film to be formed on a target substrate.

[0065] Reference Figure 1 and Figure 2 , an exemplary embodiment of the deposition mask assembly 1 includes a deposition mask 100 and a mask frame 500 .

[0066] The mask frame 500 may fix or support the deposition mask 100, and may be combined with the deposition mask 100, for example, by welding. Figure 1 As shown in , the mask frame 500 may have a quadrilateral frame shape having an opening at the center. The mask frame 500 may include two short side frames having a predetermined width and extending in a first direction DR1, and may include two long side frames having a predetermined width and extending in a second direction DR2 crossing the first direction DR1, but is not limited thereto.

[0067] The mask frame 500 may include a material having high hardness, for example, metal such as stainless steel or the like.

[0068] The deposition mask 100 may have a linear shape extending in one direction. For example, in one exemplary embodiment, Figure 1 As shown in , the deposition mask 100 may extend in the first direction DR1 to intersect with the two long side frames of the mask frame 500 and the opening in the central portion of the mask frame 500, and may be disposed on the two long side frames of the mask frame 500 and the opening in the central portion of the mask frame 500. The deposition mask 100 may be fixed to the two long side frames of the mask frame 500.

[0069] A plurality of deposition masks 100 may be provided or defined. Each of the deposition masks 100 may be disposed along one direction. For example, in one exemplary embodiment, the deposition masks 100 may be disposed along the second direction DR2, while Figure 1 , but are not limited thereto, and may be disposed along the second direction DR2 while substantially overlapping each other.

[0070] In an alternative exemplary embodiment in which the two short side frames and the two long side frames of the mask frame 500 extend in a direction opposite to the above-described direction, the extending direction and the arrangement direction of each deposition mask 100 may be different from the above-described directions.

[0071] The deposition mask 100 may include a mask pattern region MPR (or a mask body region) and a main lip region MLR in a central portion, and may include a bonding region BR and a clamping region CPR on both end portions thereof in an extending direction.

[0072] The clamping region CPR may be disposed on both ends (in the first direction DR1) of the deposition mask 100, and may have a concave shape (e.g., bent inward) on both ends of the deposition mask 100. The clamping region CPR is a portion to which a clamp (not shown) extending toward both ends (in the first direction DR1) is coupled before the deposition mask 100 is coupled to the mask frame 500 by welding, and the clamping region CPR may be removed or cut off after the welding process.

[0073] The bonding region BR may be disposed near the clamping region CPR and may be disposed to overlap the mask frame 500 in the thickness direction or the third direction DR3. Figure 1 As shown in , the bonding region BR may be positioned near the clamping regions CPR located on both ends of the deposition mask 100. Each bonding region BR may be attached or bonded to the mask frame 500 by welding. In one exemplary embodiment, for example, the bonding region BR may be welded to two long side frames of the mask frame 500.

[0074] The main lip region MLR may be disposed in a central portion of the deposition mask 100. The main lip region MLR may be disposed in a central opening exposed by the mask frame 500. The main lip region MLR may be physically connected to the bonding region BR and may surround the mask pattern region MPR. The main lip region MLR may be disposed between adjacent mask pattern regions MPR and around the periphery of the mask pattern region MPR along the second direction DR2 to completely surround the mask pattern region MPR in the same plane. The main lip regions MLR may be formed integrally with each other as a single, integral and indivisible unit.

[0075] The main lip region MLR may divide adjacent mask pattern regions MPR and may be used as a mold of the deposition mask 100. In one exemplary embodiment, for example, when a deposition material is deposited on a deposition target substrate, the main lip region MLR may be formed at a position corresponding to a region other than a pattern of a material deposited on the deposition target substrate.

[0076] Like the main lip region MLR, the mask pattern region MPR may be disposed in the central portion of the deposition mask 100 and may be disposed to overlap the central opening exposed by the mask frame 500. The mask pattern region MPR may be completely surrounded by the main lip region MLR in the same plane. In such an embodiment, the mask pattern region MPR may be completely surrounded by the structural material of the deposition mask 100 in the same plane.

[0077] A plurality of such mask pattern regions MPR may be defined or provided in a single deposition mask 100. Figure 1 As shown in , the mask pattern regions MPR may be arranged along one direction (eg, the first direction DR1) while being spaced apart from each other in the one direction. In an exemplary embodiment, the mask pattern regions MPR may be arranged along one direction (eg, the first direction DR1) while being spaced apart from each other in the one direction. Figure 1 2 and 3. The mask pattern regions MPR are shown in FIG. 2 as being arranged in a single row, but are not limited thereto. Alternatively, the mask pattern regions MPR may be arranged or disposed in two or more rows.

[0078] In an exemplary embodiment, a plurality of mask holes 110 are defined in the mask pattern region MPR, and the mask pattern region MPR may include a plurality of sub-lip regions 130 disposed near the plurality of mask holes 110. The sub-lip region 130 may be physically connected to the main lip region MLR. The sub-lip region 130 may include or be formed of the same material as that of the main lip region MLR.

[0079] In one exemplary embodiment, for example, when a deposition material is deposited on a deposition target substrate, the sub-lip region 130 may be disposed or formed at a position corresponding to a region other than a pattern of the material deposited on the deposition target substrate.

[0080] The sub-lip region 130 may surround the mask hole 110 in the same plane, thereby defining the mask hole 110. The sub-lip region 130 may be disposed between adjacent mask holes 110 and near the mask hole 110 along the second direction DR2 to completely surround the mask hole 110 in the same plane. The sub-lip region 130 may be integrally formed with the corresponding mask pattern region MPR as a single, integral and indivisible unit. The sub-lip region 130 may define adjacent mask holes 110.

[0081] The mask hole 110 may be completely surrounded in the same plane by the sub-lip region 130. In such an embodiment, the sub-lip region 130 may be defined by a structural material of the deposition mask 100 that completely surrounds the mask hole 110 in the same plane.

[0082] A plurality of mask holes 110 may be provided. Figure 2 As shown in , the mask holes 110 may be disposed along the row direction and the column direction while being spaced apart.

[0083] In an exemplary embodiment, each mask hole 110 has a Figure 2 The mask hole 110 has a rectangular dot-type plane shape as shown in FIG. 1 , but is not limited thereto. Alternatively, the mask hole 110 may have a square, circular or other polygonal dot-type shape or a slit-type shape extending in one direction.

[0084] Here, unless otherwise defined, the terms “upper,” “top,” and “upper surface” refer to a side or direction in which the deposition mask 100 is viewed based on the mask frame 500 , and the terms “lower,” “bottom,” and “lower surface” refer to a side or direction in which the mask frame 500 is viewed based on the deposition mask 100 .

[0085] The plurality of mask holes 110 may be aligned with the upper surface ( Figure 1 The upper surface in the third direction DR3) and the lower surface of the deposition mask 100 ( Figure 1 In one exemplary embodiment, for example, when a deposition material is deposited on a deposition target substrate, the mask hole 110 may be disposed at a position corresponding to a pattern of a material to be deposited on the deposition target substrate.

[0086] The deposition mask 100 may include a mask material. In one exemplary embodiment, for example, the applicable mask material may include at least one of chromium (Cr), molybdenum (Mo), titanium (Ti), tin (Sn), gold (Au), nickel (Ni), nickel alloy, nickel-cobalt alloy, etc.

[0087] In an exemplary embodiment, the deposition mask 100 may include an Invar alloy. The Invar alloy may include a steel-nickel alloy. In an exemplary embodiment, for example, the nickel content of the Invar alloy may be about 36%, and the iron content may be about 64%. However, the nickel content and the iron content are not limited to the values, and the ratio may vary as needed. In addition to nickel and iron, the Invar alloy may also include some impurities such as carbon, sulfur, etc.

[0088] The Invar alloy of the deposition mask 100 may be formed using a rolling method or an electroplating method.

[0089] In an exemplary embodiment, the deposition mask 100 may include a super-invar alloy including a nickel content of about 32%, an iron content of about 63%, and a cobalt content of about 5%.

[0090] In the following, reference will be made to Figure 3 The cross-sectional shape of the deposition mask 100 is described in detail.

[0091] Figure 3 is along Figure 2 Cross-sectional view taken along the center line III-III′. Figure 3 , the sub-lip region 130 is disposed around the periphery of the adjacent mask hole 110. Figure 3 In the embodiment, portions of the sub-lip region 130 are separated from each other by placing the mask hole 110 therebetween, but the sub-lip region 130 may be as shown in FIG. Figure 2 are shown as being integrally formed with one another as a single, integral and indivisible unit. Figure 3 In FIG. 1 , a dotted line connecting the separation portion of the sub-lip region 130 is additionally shown.

[0092] The cross-sectional shape of the sub-lip region 130 may correspond to the cross-sectional shape of the mask hole 110 .

[0093] Reference Figure 3 In an exemplary embodiment, the cross-sectional shape of the sub-lip region 130 may have a width that gradually decreases from the lower surface toward the upper surface. The cross-sectional shape of the mask hole 110 corresponding to the cross-sectional shape of the sub-lip region 130 may have a width that gradually increases from the lower surface toward the upper surface. In such an embodiment, the cross-sectional shape of the sub-lip region 130 may be a tapered shape, and the cross-sectional shape of the mask hole 110 may be an inverted tapered shape.

[0094] In an exemplary embodiment in which the mask hole 110 is formed using a laser, the sub-lip region 130 and the mask hole 110 may have Figure 3 The cross-sectional shape shown in .

[0095] The cross-sectional shape of the sub-lip region 130 and / or the mask hole 110 may be variously modified according to a process of forming the mask hole 110 .

[0096] In an alternative exemplary embodiment, the cross-sectional shape of each of the sub-lip region 130 and the mask hole 110 may have the same Figure 3 In another optional exemplary embodiment, the cross-sectional shape of the sub-lip region 130 may be an inverted tapered shape having a width that gradually increases from the lower surface toward the upper surface, and the cross-sectional shape of the mask hole 110 may be a tapered shape having a width that gradually decreases from the lower surface toward the upper surface.

[0097] In an exemplary embodiment, if Figure 1 As shown in FIG. 1 , the deposition mask 100 includes a plurality of masks separated or spaced apart from each other, but is not limited thereto. Alternatively, the deposition mask 100 may include a plurality of masks having Figure 1 The size of the combination of the multiple separate masks shown in FIG. 1 is substantially the same size as a single mask. Figure 4 is a perspective view of a deposition mask according to an alternative exemplary embodiment.

[0098] Reference Figure 4 , the deposition mask 100_1 may be a single mask integrally formed as a single integral and indivisible unit. In such an embodiment, Figure 1 Like the deposition mask 100 of FIG. 1 , the deposition mask 100_1 may include a plurality of mask pattern regions MPR and a main lip region MLR integrally formed as a single integral and indivisible unit to surround the plurality of mask pattern regions MPR in the same plane.

[0099] In such an embodiment, a plurality of holes are defined in each mask pattern region MPR, and each mask pattern region MPR includes a sub-lip region surrounding the plurality of holes in the same plane and integrally formed as a single integral and indivisible unit in each mask pattern region MPR. For ease of description, the above reference to Figure 1 and Figure 2 Any repeated descriptions of the same or identical components are described in detail.

[0100] Figure 5 is a cross-sectional view of a deposition mask according to still another alternative exemplary embodiment.

[0101] Reference Figure 5 In the exemplary embodiment of the deposition mask 100_2, the sub-lip region 130 includes an upper surface 130u and a side surface 130s (or inner surface) defining the mask hole 110, and further includes a dust oxide film DRE disposed on the side surface 130s of the sub-lip region 130. The side surface 130s of the sub-lip region 130 may be an inner surface defining an adjacent mask hole 110.

[0102] In such an embodiment, the dust oxidation film DRE is not disposed on the upper surface 130u of the sub-lip region 130, but may be disposed on at least a portion of the side surface 130s of the sub-lip region 130. The dust oxidation film DRE may be disposed on the opposite side surface 130s of the sub-lip region 130. The dust oxidation film DRE may be directly disposed on the opposite side surface 130s of the sub-lip region 130 and in contact with the opposite side surface 130s of the sub-lip region 130.

[0103] In an exemplary embodiment, if Figure 5As shown in FIG, the dust oxide film DRE may be partially disposed on the side surface 130s of the sub-lip region 130 to expose a portion of the side surface 130s of the sub-lip region 130, but is not limited thereto. Alternatively, the dust oxide film DRE may be disposed on the entire surface of the side surface 130s of the sub-lip region 130 to cover the side surface 130s.

[0104] The dust oxide film DRE may include the structural material of the deposition mask 100_2 and oxygen. In an embodiment where the deposition mask 100_2 includes an Invar alloy including nickel and iron, the dust oxide film DRE may include nickel oxide and iron oxide.

[0105] In an exemplary embodiment where the Invar alloy of the deposition mask 100_2 includes some impurities such as sulfur and / or carbon, the dust oxide film DRE may include a compound of sulfur and oxygen and / or a compound of carbon and oxygen in addition to nickel oxide and iron oxide.

[0106] Figure 6 is a cross-sectional view of a deposition mask according to still another alternative exemplary embodiment.

[0107] Reference Figure 6 , an exemplary embodiment of the deposition mask 100_3 further includes a residual film SRE disposed on the upper surface 130 u of the sub-lip region 130 .

[0108] In such an embodiment, the residual film SRE is disposed only on the upper surface 130u of the sub-lip region 130, but not on the side surface 130s of the sub-lip region 130. The residual film SRE may be directly disposed on and in contact with the upper surface 130u of the sub-lip region 130.

[0109] In an exemplary embodiment, if Figure 6 As shown in FIG, the residual film SRE is partially disposed on the upper surface 130u of the sub-lip region 130 to expose a portion of the upper surface 130u of the sub-lip region 130, but is not limited thereto. Alternatively, the residual film SRE may be disposed on the entire surface of the upper surface 130u of the sub-lip region 130 to cover the upper surface 130u.

[0110] The residual film SRE may be a sacrificial layer partially remaining after being used in a manufacturing process. The sacrificial layer and the residual film SRE may include or be formed of a material having high reflectivity for laser light, and a detailed description thereof will be described in more detail later.

[0111] Figure 7 is a cross-sectional view of a deposition mask according to still another alternative exemplary embodiment.

[0112] Reference Figure 7, the exemplary embodiment of the deposition mask 100_4 further includes Figure 5 The dust oxide film DRE and Figure 6 of the residual membrane SRE.

[0113] In such an embodiment, the residual film SRE of the deposition mask 100_4 may be set only on the upper surface 130u of the sub-lip area 130, and may not be set on the side surface 130s of the sub-lip area 130, and the dust oxide film SRE of the deposition mask 100_4 may not be set on the upper surface 130u of the sub-lip area 130, but may be set on at least a portion of the side surface 130s of the sub-lip area 130.

[0114] Hereinafter, a method of manufacturing the deposition mask 100 according to an exemplary embodiment will be described.

[0115] Figure 8 is a flowchart illustrating a method of manufacturing a deposition mask according to an exemplary embodiment. Fig. 9 is a plan view illustrating operations of a method of manufacturing a deposition mask according to example embodiments. Fig.10 It is along Fig. 9 A cross-sectional view taken along line XX′. Fig.11 is a graph showing the reflectivity of metal according to the wavelength of light. Fig.12 is a cross-sectional view illustrating operations of a method of manufacturing a deposition mask according to example embodiments. Fig.13A is a cross-sectional view illustrating operations of a method of manufacturing a deposition mask according to an exemplary embodiment, Fig. 13B yes Fig.13A An enlarged view of the circled portion of the image. Fig.14 is a photograph showing a soot oxide film in operation of a method of manufacturing a deposition mask according to an exemplary embodiment. FIG. 15A to FIG. 16B is a cross-sectional view illustrating operations of a method of manufacturing a deposition mask according to example embodiments.

[0116] Reference Figure 8 , Fig. 9 and Fig.10 , in an exemplary embodiment, a mask target substrate 101 having a surface on which a sacrificial layer 200 is disposed or formed is prepared ( S10 ).

[0117] The mask target substrate 101 is a target substrate for manufacturing the deposition mask 100. The mask target substrate 101 may include the same material as that of the deposition mask 100 described above.

[0118] The mask target substrate 101 includes a region 101b where the mask hole 110 of the deposition mask 100 is to be formed and a region 101a where the sub-lip region 130 is to be formed. The region 101b where the mask hole 110 is to be formed and the region 101a where the sub-lip region 130 is to be formed may have the same Figure 2 In such an embodiment, the mask target substrate 101 may include a region in which the main lip region MLR, the bonding region BR, and the clamping region CPR of the deposition mask 100 are to be formed.

[0119] A sacrificial layer 200 (or a sacrificial layer pattern) is disposed or formed on one surface (eg, upper surface) of the mask target substrate 101. The sacrificial layer 200 may be disposed or formed to substantially cover one surface of the mask target substrate 101. Fig. 9 As shown in , the sacrificial layer 200 may be disposed or formed to cover the region 101a in which the sub-lip region 130 is to be formed except for the region 101b in which the mask hole 110 is to be formed. In such an embodiment, the sacrificial layer 200 may be formed not to overlap the region 101b in which the mask hole 110 of the mask target substrate 101 is to be formed, but to overlap the region 101a in which the sub-lip region 130 is to be formed. The region 101a in which the sub-lip region 130 of the mask target substrate 101 is to be formed may be the covered region 101a covered by the sacrificial layer 200, and the region 101b in which the mask hole 110 of the mask target substrate 101 is to be formed may be the exposed region 101b exposed by the sacrificial layer 200.

[0120] The sacrificial layer 200 may surround the exposed area 101b in the same plane. The sacrificial layer 200 may be integrally formed as a single, integral and indivisible unit in the same plane. Fig.10 1 and 10. The sacrificial layers 200 are separated in one direction with the exposed region 101b interposed therebetween, but the sacrificial layers 200 may be formed integrally with each other as a single, integral and indivisible unit as described above. To illustrate this, Fig.10 A dotted line connecting the separated portions of the sacrificial layer 200 is additionally shown in FIG.

[0121] The structural material of the sacrificial layer 200 is different from the structural material of the mask target substrate 101, and the sacrificial layer 200 may include a material having a high reflectivity for laser light. The reflectivity of the sacrificial layer 200 for laser light may be higher than the reflectivity of the mask target substrate 101 for laser light. In an exemplary embodiment, the sacrificial layer 200 may include a highly reflective material having a reflectivity of about 70% for laser light, and the laser light may be a single wavelength light having a wavelength in the range of about 400 nanometers (nm) to about 600 nm. In an exemplary embodiment, the sacrificial layer 200 may include a metal such as aluminum (Al), copper (Cu), or silver (Ag), or be formed of a metal such as aluminum (Al), copper (Cu), or silver (Ag), but the material of the sacrificial layer 200 is not limited thereto. In one exemplary embodiment, for example, the sacrificial layer 200 may include aluminum.

[0122] Will refer to Fig.11 The reflectivity of such materials is described in more detail. Fig.11 , the horizontal axis represents the wavelength of light (nm), and the vertical axis represents the reflectivity (%).

[0123] Reference Fig.11 , Ag (e.g., polished Ag), Cu, and Al have a reflectivity higher than that of nickel, carbon steel (or iron (Fe)) over the entire wavelength range of light. Specifically, for light having a wavelength in a range of greater than 600 nm, Ag, Cu, and Al have a reflectivity of about 70% or more. Also, for light having a wavelength in a range of about 400 nm to 600 nm, Ag (e.g., polished Ag) and Cu have a reflectivity of about 70% or more, and nickel, carbon steel (or Fe) have a reflectivity in a range of about 40% to about 60%. In an exemplary embodiment to which a laser having a wavelength in a range of about 400 nm to about 600 nm is applied, the reflectivity of the sacrificial layer 200 for the laser may be higher than that of the mask target substrate 101. In such an embodiment, Invar alloy may be used as a material of the mask target substrate 101, and at least one of Al, Cu, and Ag may be used as a material of the sacrificial layer 200. The reflectivity of the sacrificial layer 200 may be about 70% or more, and the reflectivity of the mask target substrate 101 may be in the range of about 40% to about 60%.

[0124] Return to reference Fig.10 , the cross-sectional shape of the sacrificial layer 200 may have a width gradually decreasing from the lower surface toward the upper surface. That is, the cross-sectional shape of the sacrificial layer 200 may be a tapered shape.

[0125] The cross-sectional shape of the sacrificial layer 200 may be variously modified by a process of forming the sacrificial layer 200. Such a process will be described in detail hereinafter.

[0126] Reference Figure 8 and Fig.12 , a laser device is disposed on the sacrificial layer 200 and the mask target substrate 101, and laser of the laser device is emitted toward the mask target substrate 101 exposed by the sacrificial layer 200 (S20). In one exemplary embodiment, for example, the laser may have a wavelength in the range of about 400 nm to about 600 nm.

[0127] The laser removes the exposed area 101b of the mask target substrate 101. Figure 8 In operation S20 in which the laser is emitted toward the mask target substrate 101 exposed by the sacrificial layer 200, due to an alignment error that may partially occur in the laser device, the laser may be partially emitted toward the cover area 101a of the mask target substrate 101 covered by the sacrificial layer 200.

[0128] In an exemplary embodiment, the sacrificial layer 200 includes a material having a high reflectivity with respect to the laser as described above. Therefore, even when the laser is emitted toward the coverage area 101a of the mask target substrate 101, most of the incident laser (e.g., about 80% or more) is reflected, so that the amount of laser light emitted directly toward the coverage area 101a of the mask target substrate 101 is not large.

[0129] In such an embodiment, laser light incident on the exposure region 101 b passes through the mask target substrate 101 having a smaller reflectivity for laser light than the sacrificial layer 200 , so that a sufficient amount of laser light can be emitted directly toward the exposure region 101 b of the mask target substrate 101 .

[0130] In an exemplary embodiment of a method of manufacturing the deposition mask 100 , a sacrificial layer 200 that blocks laser light is disposed in a region other than the exposed region 101 b of the mask target substrate 101 to improve precision in a laser patterning process.

[0131] In an exemplary embodiment, if Fig.12 As shown in the region B of FIG. 1 , the laser device in which the alignment error partially occurs may not be able to sufficiently emit laser light toward the exposure region 101 b of the mask target substrate 101. In this case, the laser device can emit a sufficient amount of laser light toward the entire exposure region 101 b of the mask target substrate 101 by adjusting the emission range and intensity of the laser light.

[0132] Reference Figure 8 , Fig.13A and Fig.14 , in such an embodiment, the exposed region 101b of the mask target substrate 101, toward which the laser is emitted, is removed (S30).

[0133] The operation (S30) of removing the exposed area 101b of the mask target substrate 101 toward which the laser is emitted includes leaving the cover area 102 of the mask target substrate 101. The cover area 102 of the mask target substrate 101 is the same as the cover area 102 of the deposition mask 100. Figure 2 The sub-lip region 130 shown in FIG. 13A is a sub-lip region 130 remaining after the following operations are performed. After the operation (S30) of removing the exposed region 101b of the mask target substrate 101, a hole region 103 may be formed between the cover regions 102 as shown in FIG. 13A. The hole region 103 is a sub-lip region 130 of the deposition mask 100. Figure 2 The remaining mask holes 110 are shown in FIG.

[0134] In an exemplary embodiment, if Fig.13A , Fig. 13B and Fig.14 As shown in , in the process of forming the final mask hole 110 of the deposition mask 100, dust oxide films 70, dust oxide films 71 and dust oxide films 72 can be formed on the inner surface 102s of the covering area 102 of the mask target substrate 101 and the upper surface 200u and the opposite side surface 200s of the sacrificial layer 200.

[0135] The dust oxide film 70 may partially cover and partially expose the inner surface 102s of the cover region 102 of the mask target substrate 101. In such an embodiment, the dust oxide film 72 and the dust oxide film 71 may partially cover and partially expose the upper surface 200u and the opposite side surface 200s of the sacrificial layer 200, respectively. In such an embodiment, the upper surface 200u and the opposite side surface 200s of the sacrificial layer 200 may respectively include an upper surface cover region 200uc and a side surface cover region 200sc covered by the dust oxide film 72 and the dust oxide film 71, and may respectively include an upper surface exposed region 200ue and a side surface exposed region 200se exposed by the dust oxide film 72 and the dust oxide film 71.

[0136] In such an embodiment, the inner surface 102 s of the cover region 102 of the mask target substrate 101 may include a region covered by the soot oxide film 70 and a region exposed by the soot oxide film 70 .

[0137] Alternatively, the soot oxide film 70 may cover all inner surfaces 102 s of the cover region 102 of the mask target substrate 101 , and the soot oxide films 71 and 72 may cover all upper surfaces 200 u and all opposite side surfaces 200 s of the sacrificial layer 200 .

[0138] Reference Figure 8 , Fig.15A , Fig. 15B , Fig.16A and Fig. 16B, the sacrificial layer 200 is removed from the surface of the cover area 102 of the mask target substrate 101 (S40).

[0139] Operation S40 of removing the sacrificial layer 200 from the surface of the cover region 102 of the mask target substrate 101 may include etching the sacrificial layer 200 using a first etchant.

[0140] The first etchant may include an acid etching solution or an alkali etching solution. The material applicable to the acid etching solution may be an inorganic acid such as hydrochloric acid, sulfuric acid, nitric acid and hydrogen fluoride, formic acid, oxalic acid, citric acid, acetic acid and benzoic acid, etc., but the material is not limited thereto. The material applicable to the alkali etching solution may be an alkali metal hydroxide such as sodium hydroxide, potassium hydroxide and lithium hydroxide, an alkaline earth metal hydroxide such as calcium hydroxide, an inorganic alkali metal salt such as sodium carbonate, an organic alkali metal salt such as sodium acetate and an ammonia solution, etc., but the material is not limited thereto. In an exemplary embodiment, the first etchant may include a hydroxide of sodium. In other embodiments, the first etchant may include hydrochloric acid.

[0141] In the operation of etching the sacrificial layer 200 using the first etchant, the etching rates of the sacrificial layer 200 and the cover region 102 of the mask target substrate 101 are different from each other. In such an embodiment, the selected first etchant may mainly etch the sacrificial layer 200, and may hardly etch the cover region 102 of the mask target substrate 101. For example, in an exemplary embodiment, the etching rate of the sacrificial layer 200 may be 5 times or more of the etching rate of the cover region 102 of the mask target substrate 101, or 20 times or more of the etching rate of the cover region 102 of the mask target substrate 101.

[0142] In the operation of etching the sacrificial layer 200 using the first etchant, the sacrificial layer 200 may be etched by dipping the sacrificial layer 200 in the first etchant, but the operation is not limited thereto. Alternatively, the sacrificial layer 200 may be etched by spreading the first etchant on the sacrificial layer 200.

[0143] The first etchant may penetrate the sacrificial layer 200 to remove the sacrificial layer 200 from the surface of the cover region 102. The path of the first etchant penetrating the sacrificial layer 200 may be to penetrate directly through the Fig. 15B The paths of the upper surface exposed area 200ue and the side surface exposed area 200se of the sacrificial layer 200 shown in FIG. Fig. 15B yes Fig.15A200uc and the side surface covering area 200sc. In an exemplary embodiment, the first etchant may penetrate the upper surface covering area 200uc and the side surface covering area 200sc of the sacrificial layer 200 by directly passing through the dust oxide film 71 and the dust oxide film 72, but the disclosure is not limited thereto.

[0144] The operation of etching the sacrificial layer 200 using the first etchant may be performed during a process time of about 30 minutes. The process time consumed by the operation of etching the sacrificial layer 200 using the first etchant may be equal to or less than the time consumed by the operation of removing the dust oxide film 70 by etching using the second etchant (to be described below).

[0145] The operation S40 of removing the sacrificial layer 200 from the surface of the cover region 102 of the mask target substrate 101 includes an operation of removing the dust oxide film 71 and the dust oxide film 72 disposed on the side surface cover region 200 sc and the upper surface cover region 200 uc of the sacrificial layer 200 .

[0146] After the operation S40 of removing the sacrificial layer 200 from the surface of the cover region 102 of the mask target substrate 101 is performed, a residual film SRE of a portion of the sacrificial layer 200 may be formed as shown in FIG. Fig. 16B As shown in FIG. 1 , the upper surface 102u of the cover area 102 remains. Fig. 16B yes Fig.16A The residual film SRE is a residue of the sacrificial layer 200 that is not completely removed but partially remains during the process of removing the sacrificial layer 200 , and may include the same material as that of the sacrificial layer 200 .

[0147] In exemplary embodiments, the etching time and density of the first etchant may be adjusted in such a manner that the residual film SRE does not remain on the upper surface 102 u of the cover region 102 .

[0148] In an exemplary embodiment, the dust oxide film 70 formed on the inner surface 102 s of the cover region 102 of the mask target substrate 101 is removed ( S50 ).

[0149] The operation S50 of removing the soot oxide film 70 formed on the inner surface 102 s of the cover region 102 of the mask target substrate 101 may include an operation of etching the soot oxide film 70 using a second etchant.

[0150] The second etchant may include an acid etching solution or an alkaline etching solution. The second etchant may be selected from the materials of the first etchant described above. In an exemplary embodiment, the second etchant may include an oxalic acid solution.

[0151] In the operation of etching the dust oxide film 70 using the second etchant, the dust oxide film 70 may be etched without etching the cover region 102 .

[0152] In such an embodiment, the second etchant has an etching property for the dust oxide film 70, but may not have an etching property for the cover region 102. In an alternative exemplary embodiment in which the second etchant has an etching property not only for the dust oxide film 70 but also for the cover region 102, process conditions such as etching time may be used to effectively prevent the cover region 102 from being etched by the second etchant.

[0153] The operation of etching the soot oxide film 70 using the second etchant may be performed during a process time of about 30 hours to 47 hours. The process time consumed by the operation of etching the soot oxide film 70 using the second etchant may be significantly greater than the process time consumed by the operation of removing the sacrificial layer 200 by etching using the first etchant.

[0154] In such an embodiment, although the dust oxide film 70 formed on the inner surface 102s of the cover region 102 of the mask target substrate 101 is removed, the dust oxide film DRE as a residue may remain on the inner surface 102s of the cover region 102 of the mask target substrate 101. Figure 5 The inner surface (or Fig.16A and Fig. 16B 's coverage area 102).

[0155] When the sacrificial layer 200 is not provided on the mask target substrate 101, in the operation of removing the exposed area 101b of the mask target substrate 101 using laser, a dust oxide film is formed on all upper surfaces and all side surfaces of the cover area 101a of the mask target substrate 101. A process time of about 65 hours to about 80 hours is consumed to remove all dust oxide films formed on the upper surface and side surfaces of the cover area 101a of the mask target substrate 101. However, in an exemplary embodiment in which the sacrificial layer 200 is formed on the mask target substrate 101, the dust oxide film is formed on all of the upper surface and side surfaces of the sacrificial layer 200 and the inner surface of the cover area 101a. However, as described above, since the dust oxide film formed on the upper surface and side surfaces of the sacrificial layer 200 can be removed together with the sacrificial layer 200 within about 30 minutes at most, the process time can be significantly reduced compared to the above-mentioned process time of about 65 hours to 80 hours.

[0156] In an exemplary embodiment, when the intensity of the laser emitted to remove the exposed region 101b of the mask target substrate 101 is increased, the efficiency of the operation of removing the exposed region 101b of the mask target substrate 101 may be increased. Fig.17 and Fig.18 Describe such an operation.

[0157] Fig.17 is a graph showing the correlation between the intensity of the laser and the number of untreated holes, Fig.18 is a graph showing the correlation between the intensity of the laser and the etching efficiency. Fig.17 In FIG. 1 , the horizontal axis represents the intensity of the laser (%), and the vertical axis represents the number of unprocessed mask holes per unit area. Fig.18 In FIG. 1 , the horizontal axis represents the intensity (%) of laser light, and the vertical axis represents the efficiency of forming mask holes.

[0158] Reference Fig.17 As the intensity of the laser increases, the exposed area 101b not removed from the mask target substrate 101 (i.e., the number of unprocessed holes per unit area (PPM (#6480ea)) gradually decreases. In other words, it can be seen that the number of exposed areas 101b removed from the mask target substrate 101 increases as the intensity of the laser increases. Referring to Fig.18 , which shows that the efficiency of forming mask holes increases as the intensity (%) of the laser increases.

[0159] As the intensity of the laser light increases, the amount of dust oxide film that occurs when the mask holes are formed in the mask target substrate 101 increases.

[0160] However, in the exemplary embodiment in which the sacrificial layer 200 is disposed on the mask target substrate 101, even when the intensity of the laser is increased so that the amount of the dust oxide film 70, the dust oxide film 71, and the dust oxide film 72 formed on the upper surface and the side surface of the sacrificial layer 200 and the side surface of the cover area 101a increases, the dust oxide film formed on the upper surface and the side surface of the sacrificial layer 200 can be removed together with the sacrificial layer 200 within a maximum of about 30 minutes as described above. In such an embodiment, since the process time for removing the dust oxide film is significantly reduced even when the intensity of the laser is sufficiently increased to effectively form the mask hole, the entire process time for depositing the mask 100 is reduced to improve the processing efficiency.

[0161] Hereinafter, an exemplary embodiment of operation S10 of preparing a mask target substrate having a surface on which a sacrificial layer is formed will be described in detail below.

[0162] Fig.19 is a flowchart illustrating an operation of forming a sacrificial layer according to an exemplary embodiment, Fig. 20 It is shown Fig.19 A cross-sectional view of the operation shown in FIG.

[0163] Reference Fig.10 , Fig.19 and Fig. 20In operation S10 of preparing a mask target substrate having a surface on which a sacrificial layer is formed, a sacrificial layer 201 may be disposed or formed on the mask target substrate using photolithography.

[0164] In operation S10 of preparing a mask target substrate having a surface on which a sacrificial layer is formed, first, a sacrificial layer 201 is disposed or formed on the surface of the mask target substrate 101 (S21). Operation S21 of disposing or forming the sacrificial layer 201 on the surface of the mask target substrate 101 may include an operation of integrally forming the sacrificial layer 201 on the entire mask target substrate 101.

[0165] In such an embodiment, a resist layer 300 is formed on the surface of the sacrificial layer 201 (S22). The operation S22 of forming the resist layer 300 may include forming the resist layer 300 to be aligned with the surface of the sacrificial layer 201. Fig.10 The resist layer 300 may expose a portion of the sacrificial layer 201 and may cover another portion of the sacrificial layer 201 .

[0166] In an exemplary embodiment, the resist layer 300 may be a photocurable resin. In an exemplary embodiment, for example, the resist layer 300 may include at least one of acrylic resin, styrene resin, olefin resin, polycarbonate resin, polyester resin, epoxy resin, silicone resin, etc. In an exemplary embodiment, the resist layer 300 may be a thermoplastic resin.

[0167] The cross-sectional shape of the resist layer 300 may be as follows: Fig. 20 The cross-sectional shape of the resist layer 300 may be a tapered shape having a width gradually decreasing from the lower surface toward the upper surface as shown in . When the resist layer 300 includes a negative photosensitive material, such a shape may be formed. In an alternative exemplary embodiment, the cross-sectional shape of the resist layer 300 may be an inverted tapered shape having a width gradually increasing from the lower surface toward the upper surface. When the resist layer 300 includes a positive photosensitive material, such a shape may be formed.

[0168] In such an embodiment, the sacrificial layer 201 exposed by the resist layer 300 is removed ( S23 ).

[0169] The operation S23 of removing the sacrificial layer 201 exposed by the resist layer 300 may include an operation of removing the portion of the sacrificial layer 201 exposed by the resist layer 300 by etching.

[0170] After the operation S23 of removing the portion of the sacrificial layer 201 exposed by the resist layer 300, the resist layer 300 is removed (S24). After removing the resist layer 300, a Fig.10In an exemplary embodiment, the cross-sectional shape of the sacrificial layer 200 may be variously modified by a process of forming the sacrificial layer 200 to be different from Fig.10 The cross-sectional shape of the sacrificial layer 200 is shown in FIG. Fig.21 and Fig. 22 Describe such a process.

[0171] Fig.21 is a cross-sectional view showing a sacrificial layer according to an alternative exemplary embodiment, Fig. 22 is a cross-sectional view illustrating a sacrificial layer according to another alternative exemplary embodiment.

[0172] When the operation of removing the portion of the sacrificial layer 201 exposed by the resist layer 300 by etching is performed by wet etching, as shown in FIG. Fig.21 As shown in , the cross-sectional shape of the sacrificial layer 200_1 may include a curved surface in which an inner surface of the sacrificial layer 200_1 is curved inwardly, and may be a substantially inverted tapered shape in which a width of the sacrificial layer 200_1 gradually increases from a lower surface toward an upper surface.

[0173] Alternatively, when the operation of removing the sacrificial layer 201 exposed by the resist layer 300 by etching is performed by dry etching, as shown in FIG. Fig. 22 As shown in FIG. 2 , the planar shape of the sacrificial layer 200_2 may be a rectangular shape in which the width of the lower surface is substantially equal to the width of the upper surface.

[0174] Hereinafter, an alternative exemplary embodiment of operation S10 of preparing a mask target substrate having a surface on which a sacrificial layer is formed will be described in detail below. Fig.19 and Fig. 20 Any repeated detailed description of components that are the same or identical to the components of the embodiments shown in FIG.

[0175] Fig.23 is a flowchart illustrating an operation of forming a sacrificial layer according to an alternative exemplary embodiment, Fig.24 It is shown Fig.23 A cross-sectional view of the operation shown in FIG.

[0176] Reference Fig.10 , Fig.23 and Fig.24 , except that the resist layer 301 is first formed on the surface of the mask target substrate 101, such an embodiment of the operation (S11) of preparing the mask target substrate 101 on which the sacrificial layer 202 is formed is similar to Fig.19 The embodiments are basically the same.

[0177] In such an embodiment, a resist layer 301 is formed on one surface of the mask target substrate 101 ( S31 ).

[0178] Subsequently, a sacrificial layer 202 is formed on the surface of the mask target substrate 101 exposed by the resist layer 301 using an electroplating method (S32).

[0179] The first thickness t1 of the resist layer 301 may be greater than the second thickness t2 of the sacrificial layer 202 formed by the above process.

[0180] Alternatively, the sacrificial layer 202 formed on the upper surface and the side surface of the resist layer 301 may be partially connected. In such an embodiment, the difference between the first thickness t1 and the second thickness t2 is not large enough to maintain a certain level of step coverage. Fig.25 and Fig.26 The embodiments shown in describe such embodiments in more detail.

[0181] Then, the resist layer 301 is removed (S33).

[0182] Fig.25 is a flowchart illustrating an operation of forming a sacrificial layer according to another alternative exemplary embodiment, Fig.26 It is shown Fig.25 A cross-sectional view of the operation shown in FIG.

[0183] Reference Fig.10 , Fig.25 and Fig.26 Operation S12 of forming the sacrificial layer 202_1 includes forming a resist layer 301_1 on the surface of the mask target substrate 101 (S31_1), forming the sacrificial layer 202_1 on the surface of the mask target substrate 101 exposed by the resist layer 301_1 by sputtering (S32_1), and removing the resist layer 301_1 (S33_1).

[0184] In such an embodiment, through the above process, the sacrificial layer 202_1 may be formed not only in the space between adjacent resist layers 301_1 in the same plane, but also on the upper surface of the resist layer 301_1. In such an embodiment, the operation of removing the resist layer 301_1 may include the operation of removing the sacrificial layer 202_1 disposed on the upper surface of the resist layer 301_1.

[0185] The first thickness t1_1 of the resist layer 301_1 may be greater than the second thickness t2_1 of the sacrificial layer 202_1 formed by the above process. When the first thickness t1_1 of the resist layer 301_1 is significantly greater than the second thickness t2_1 of the sacrificial layer 202_1, the sacrificial layer 202_1 formed on the upper surface and the side surface of the resist layer 301_1 may not be connected, and may be Fig.26 Separated by the low step coverage shown in .

[0186] In such an embodiment, an etching solution that removes the resist layer 301_1 may penetrate the resist layer 301_1 through the inner surface of the resist layer 301_1 exposed by the sacrificial layer 202_1 and may not penetrate through the inner surface of the resist layer 301_1 covered by the sacrificial layer 202_1 .

[0187] In exemplary embodiments, the etching solution may penetrate the inner surface of the resist layer 301_1 covered by the sacrificial layer 202_1 according to the type and concentration of the etching solution.

[0188] Alternatively, the sacrificial layer 202_1 formed on the upper surface and the side surface of the resist layer 301_1 may be partially connected. In such an embodiment, the difference between the first thickness t1_1 and the second thickness t2_1 may not be too large to maintain a certain level of step coverage. The etching solution that removes the resist layer 301_1 may penetrate the resist layer 301_1 through the area not covered by the sacrificial layer 202_1. However, compared with the above-mentioned embodiment, the etching efficiency of the resist layer 301_1 may not be high.

[0189] In addition, when the sacrificial layer 202_1 formed on the upper surface and the side surface of the resist layer 301_1 is partially connected, since the sacrificial layer 202_1 formed on the upper surface and the side surface is connected, it takes more time to remove the resist layer 301_1. Therefore, the first thickness t1_1 of the resist layer 301_1 is formed to be greater than the second thickness t2_1 of the sacrificial layer 202_1 to improve efficiency as a whole in the process of forming the sacrificial layer 202_1, so that the sacrificial layer 202_1 formed on the upper surface and the side surface of the resist layer 301_1 may not be connected and may be separated.

[0190] According to the disclosed exemplary embodiments, a method of manufacturing a deposition mask in which process efficiency of the deposition mask is improved may be provided.

[0191] According to other disclosed exemplary embodiments, a deposition mask having improved process efficiency may be provided.

[0192] The invention should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0193] While the invention has been particularly shown and described with reference to embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit or scope of the invention as defined by the claims.

Claims

1. A method for manufacturing a deposition mask, the method comprising: preparing a mask target substrate having a surface on which a sacrificial layer pattern is disposed and including a covered area covered by the sacrificial layer pattern and a plurality of exposed areas exposed by the sacrificial layer pattern; forming holes in the plurality of exposed areas of the mask target substrate by emitting a laser toward the mask target substrate; as well as removing the sacrificial layer pattern, The reflectivity of the sacrificial layer pattern with respect to the laser is higher than the reflectivity of the mask target substrate with respect to the laser.

2. The method of claim 1, wherein: The step of preparing the mask target substrate includes arranging the sacrificial layer pattern so that the covered region of the mask target substrate completely surrounds each of the plurality of exposed regions of the mask target substrate.

3. The method of claim 2, wherein: The step of forming the holes in the plurality of exposed areas of the mask target substrate by emitting the laser toward the mask target substrate includes partially emitting the laser toward the covered area of ​​the mask target substrate.

4. The method of claim 3, wherein: The reflectivity of the sacrificial layer pattern with respect to the laser light is 70% or more.

5. The method of claim 4, wherein: The laser has a single wavelength within a wavelength range from 400 nanometers to 600 nanometers.

6. The method according to claim 3, wherein: The mask target substrate includes an Invar alloy including nickel and iron.

7. The method of claim 6, wherein: The sacrificial layer pattern includes at least one of aluminum, silver, and copper.

8. The method of claim 1, wherein: The step of removing the sacrificial layer pattern is performed using a first etchant.

9. A deposition mask, comprising: a mask body including a plurality of hole regions disposed to be spaced apart from each other and a lip region surrounding each of the plurality of hole regions; a dust oxide film disposed on an inner surface of the hole region of the lip region facing the mask body; as well as a residual film disposed on the upper surface of the lip region and comprising a material different from that of the dust oxide film, Wherein, the residual film includes at least one of aluminum, silver and copper.

10. The deposition mask of claim 9, wherein: The dust oxide film is not provided on the upper surface of the lip region of the mask main body.

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